CN215439669U - MEMS thermopile infrared sensor - Google Patents
MEMS thermopile infrared sensor Download PDFInfo
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- CN215439669U CN215439669U CN202121639814.1U CN202121639814U CN215439669U CN 215439669 U CN215439669 U CN 215439669U CN 202121639814 U CN202121639814 U CN 202121639814U CN 215439669 U CN215439669 U CN 215439669U
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Abstract
The utility model provides an MEMS thermopile infrared sensor, wherein a second semiconductor layer positioned on an upper layer is provided with a first etching window penetrating through the second semiconductor layer, an infrared absorption layer is provided with a second etching window penetrating through the infrared absorption layer, two opposite surfaces of the first semiconductor layer and the second semiconductor layer positioned at a cold junction end are both contacted with an insulating medium layer, a first cavity is arranged between the first semiconductor layer and the second semiconductor layer positioned at a hot junction end, a second cavity is arranged between the second semiconductor layer and the infrared absorption layer positioned at the hot junction end, and the first etching window, the first cavity, the second etching window and the second cavity are communicated. The utility model only reserves the insulating medium layer at the cold junction end, can reduce the heat conduction cross section area, reduce the heat loss of hot junction, effectively improve the sensitivity of the sensor, and can form the supporting part to support the thermocouple when forming the infrared absorption layer, reduce the fracture probability and improve the quality.
Description
Technical Field
The utility model relates to the field of semiconductor manufacturing, in particular to an MEMS thermopile infrared sensor.
Background
Micro-Electro-Mechanical-System (MEMS) technology refers to a Micro-System that integrates Mechanical components, driving components, optical systems, and electrical control systems into a whole, and it uses Micro-electronics technology and Micro-processing technology, such as silicon Micro-processing, silicon surface Micro-processing, wafer bonding, etc. to manufacture various sensors, actuators, drivers, and Micro-systems with excellent performance, low cost, and miniaturization.
MEMS thermopile infrared detectors generally consist of three parts: a thermocouple, a dielectric support layer, and a heat sink substrate. The infrared absorption layer is arranged in the center of the detector and is responsible for absorbing external infrared radiation so as to raise the temperature of the detector, the hot junction of the thermopile is formed at the position near the infrared absorption layer, the cold junction of the thermopile is positioned on the radiating substrate so as to realize good radiating performance, the thermocouple pairs which are connected in series are arranged between the hot junction and the cold junction, and the thermoelectromotive force is output outwards through the pins, so that the array which can be connected with a plurality of thermocouples in series and can measure the temperature difference in a non-contact manner is formed.
The working principle of the MEMS thermopile infrared detector is as follows: the infrared absorption layer absorbs the infrared ray of external incidence and then generates heat, so that the temperature of a thermocouple hot junction is increased, and due to the Seebeck effect, when temperature difference exists between cold and hot nodes, the thermocouple can generate slight voltage difference, and then the voltage difference is detected through a peripheral circuit connected with the thermocouple, so that the detection of the thermopile on the external infrared ray is realized. It is clear that sensitivity is a key factor affecting the performance of MEMS thermopiles.
Therefore, it is desirable to provide a MEMS thermopile infrared sensor to improve the sensitivity of the MEMS thermopile infrared sensor.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a MEMS thermopile infrared sensor for solving the problem of the sensitivity of the MEMS thermopile infrared sensor in the prior art.
To achieve the above and other related objects, the present invention provides a MEMS thermopile infrared sensor including:
a substrate having a cavity therethrough;
the insulating medium layer is positioned on the substrate;
the thermocouple comprises a first semiconductor layer with an A Seebeck coefficient and a second semiconductor layer with a B Seebeck coefficient, the Seebeck coefficients of the first semiconductor layer and the second semiconductor layer are opposite and are arranged in a pair-stacked mode, the second semiconductor layer located on the upper layer is provided with a first etching window penetrating through the second semiconductor layer, two opposite surfaces of the first semiconductor layer and the second semiconductor layer located on the cold junction end are both contacted with the insulating medium layer, a first cavity is arranged between the first semiconductor layer located on the hot junction end and the second semiconductor layer, and the first cavity is communicated with the first etching window;
a conductive layer in contact with the first semiconductor layer and the second semiconductor layer;
the infrared absorption layer is provided with a second etching window penetrating through the infrared absorption layer, a second cavity is arranged between the second semiconductor layer and the infrared absorption layer and located at a hot junction end, the second cavity is communicated with the second etching window, and the second cavity is communicated with the first cavity.
Optionally, a projection of the second semiconductor layer located on the upper layer in the vertical direction is located in the first semiconductor layer, so as to form a stepped thermocouple structure.
Optionally, the infrared absorption layer includes an infrared absorption portion located on a hot junction end and a support portion located outside the first semiconductor layer and the second semiconductor layer.
Optionally, the support comprises a segmented support.
Optionally, the center lines of the first etching window and the second etching window are located on the same vertical line.
Optionally, the insulating dielectric layer includes one or a combination of a silicon oxide layer and a silicon nitride layer; the infrared absorbing layer includes a silicon nitride infrared absorbing layer.
As described above, the MEMS thermopile infrared sensor of the present invention includes a substrate, an insulating medium layer, a thermocouple, a conductive layer, and an infrared absorption layer, wherein the second semiconductor layer located on the upper layer has a first etching window penetrating through the second semiconductor layer, the infrared absorption layer has a second etching window penetrating through the infrared absorption layer, two opposite surfaces of the first semiconductor layer and the second semiconductor layer located on the cold junction end are both in contact with the insulating medium layer, a first cavity is provided between the first semiconductor layer and the second semiconductor layer located on the hot junction end, a second cavity is provided between the second semiconductor layer and the infrared absorption layer located on the hot junction end, and the first etching window, the first cavity, the second etching window, and the second cavity are through. According to the utility model, the insulating medium layer at the hot junction end of the sensor is removed, and only the insulating medium layer at the cold junction end is reserved, so that the heat conduction cross section area can be reduced, the heat loss of the hot junction is reduced, the temperature difference of the hot junction and the cold junction is maintained, the sensitivity of the sensor is effectively improved, and the supporting part can be formed when the infrared absorption layer is formed, so that the thermocouple is supported, the fracture probability is reduced, and the quality is improved.
Drawings
FIG. 1 is a schematic diagram of a process flow for fabricating a MEMS thermopile infrared sensor in an embodiment of the present invention.
FIG. 2 is a schematic front sectional view of an MEMS thermopile infrared sensor according to an embodiment of the present invention.
FIG. 3 is a schematic side sectional view of an MEMS thermopile infrared sensor according to an embodiment of the present invention.
FIGS. 4 a-4 b are schematic diagrams illustrating top views of MEMS thermopile infrared sensors according to embodiments of the present invention.
Fig. 5a to 5c are schematic diagrams illustrating distribution structures of a plurality of thermocouples according to an embodiment of the present invention.
Description of the element reference numerals
100 substrate
110 cavity
200 insulating dielectric layer
210 first insulating dielectric layer
220 second insulating dielectric layer
221 first cavity
230 third insulating dielectric layer
231 second cavity
300 thermocouple
310 first semiconductor layer
320 second semiconductor layer
321 first etching window
400 conductive layer
500 infrared absorbing layer
510 infrared absorbing part
511 second etch Window
520 supporting part
A hot junction end
B cold junction end
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The utility model is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present. As used herein, "between … …" is meant to include both endpoints.
In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed freely, and the layout of the components may be more complicated.
As shown in fig. 1, the present embodiment provides a MEMS thermopile infrared sensor including a substrate 100, an insulating medium layer 200, a thermocouple 300, a conductive layer 400, and an infrared absorption layer 500. Wherein the substrate 100 has a cavity 110 through the substrate 100; the insulating medium layer 200 is positioned on the substrate 100; the thermocouple 300 comprises a first semiconductor layer 310 with an A Seebeck coefficient and a second semiconductor layer 320 with a B Seebeck coefficient, wherein the Seebeck coefficients of the first semiconductor layer 310 and the second semiconductor layer 320 are opposite and are arranged in a pair-stacked manner, the second semiconductor layer 320 positioned on the upper layer is provided with a first etching window 321 penetrating through the second semiconductor layer 320, wherein two opposite surfaces of the first semiconductor layer 310 and the second semiconductor layer 320 positioned at a cold junction end B are both contacted with the insulating medium layer 200, a first cavity 221 is arranged between the first semiconductor layer 310 and the second semiconductor layer 320 positioned at a hot junction end A, and the first cavity 221 is communicated with the first etching window 321; the conductive layer 400 is in contact with the first semiconductor layer 310 and the second semiconductor layer 320; the infrared absorption layer 500 has a second etching window 511 penetrating through the infrared absorption layer 500, a second cavity 231 is formed between the second semiconductor layer 320 at the hot junction end a and the infrared absorption layer 500, the second cavity 231 is communicated with the second etching window 511, and the second cavity 231 is communicated with the first cavity 221.
In this embodiment, the MEMS thermopile infrared sensor has only the cold junction end B with the insulating medium layer 200, so that the heat conduction cross-sectional area can be reduced, the heat loss of the hot junction can be reduced, and the sensitivity of the sensor can be effectively improved while the temperature difference of the cold junction and the hot junction can be maintained.
As an example, the infrared absorption layer 500 includes an infrared absorption part 510 on a hot junction a and a support part 520 outside the first and second semiconductor layers 310 and 320.
Specifically, in this embodiment, the infrared absorption layer 500 includes an infrared absorption part 510 located at the top and used for absorbing the infrared rays incident from the outside to generate heat, so that the thermocouple 300 generates a temperature difference, and the infrared absorption layer 500 further includes a support part 520, wherein the support part 520 is in contact with the outer sides of the first semiconductor layer 310 and the second semiconductor layer 320, so that the support part 520 can be used for supporting the first semiconductor layer 310, the second semiconductor layer 320, and the infrared absorption part 510, thereby preventing the thermocouple 300 and the infrared absorption part 510 from cracking, and improving the quality.
As an example, a projection of the second semiconductor layer 320 located at the upper layer in the vertical direction is located in the first semiconductor layer 310, so as to form a stepped thermocouple structure.
Specifically, when the projection of the second semiconductor layer 320 in the vertical direction is located in the first semiconductor layer 310, a stepped thermocouple structure may be formed, as shown in fig. 3, 4a and 4B, the stepped thermocouple structure may provide an accommodating space for the supporting portion 520, so that the supporting portion 520 may support the second semiconductor layer 320, the first semiconductor layer 310 and the infrared absorption portion 510, and thus the second semiconductor layer 320 and the first semiconductor layer 310 may form a stable structure through the supporting portion 520 and the insulating medium layer 200 located at the cold junction end B, and prevent cracking from occurring, so as to improve quality. In this embodiment, the stepped thermocouple structure is adopted, but the shape of the thermocouple is not limited to this.
Illustratively, the support 520 comprises a segmented support.
Specifically, as shown in fig. 4a and 4b, two kinds of structural schematic diagrams of the supporting portion 520 are illustrated, wherein, when the supporting portion 520 is segmented as shown in fig. 4b, the acting area can be further reduced, but the shape of the supporting portion 520 is not limited thereto, and a continuous distribution structure as shown in fig. 4a can also be adopted, which is not limited herein.
As an example, the first etching window 321 and the second etching window 511 are located on the same vertical line.
Specifically, as shown in fig. 2 to 4b, the first etching window 321, the first cavity 221, the second etching window 511 and the second cavity 231 are connected, and preferably, the first etching window 321 and the second etching window 511 are located on the same vertical line, so that the first cavity 221 and the second cavity 231 are conveniently formed.
As an example, the insulating dielectric layer 300 includes one or a combination of a silicon oxide layer and a silicon nitride layer; the infrared absorption layer 500 comprises a silicon nitride infrared absorption layer, wherein the insulating dielectric layer 300 may be a single layer or a multi-layer structure, and specific materials and structures of the insulating dielectric layer 300 and the infrared absorption layer 500 are not limited herein.
As an example, the MEMS thermopile infrared sensor has a plurality of thermocouples 300 therein, and the thermocouples 300 are connected in series to constitute a thermocouple group; the formed distribution morphology of the thermocouple group includes a cross shape or a meter shape to increase a voltage difference generated by the thermocouple 300, thereby realizing accurate detection of external infrared rays by the thermopile. Fig. 5a to 5c illustrate the distribution of three thermocouple groups, but the number and distribution of the thermocouples 300 are not limited thereto.
As an example, the conductive layer 400 includes one or a combination of an aluminum metal layer, a silver metal layer, a gold metal layer, a titanium metal layer, a tungsten metal layer, and a platinum metal layer, and the specific material and morphology may be selected according to needs, which is not limited herein.
Referring to fig. 1 to 5c, the embodiment further provides a method for manufacturing an MEMS thermopile infrared sensor, including the following steps:
providing a substrate 100;
forming a first insulating medium layer 210 covering the substrate 100 on the substrate 100;
forming a first semiconductor layer 310 having an a seebeck coefficient on the first insulating dielectric layer 210;
forming a second insulating dielectric layer 220 on the first semiconductor layer 310 to cover the first semiconductor layer 310;
forming a second semiconductor layer 320 having a B seebeck coefficient on the second insulating medium layer 220, wherein the seebeck coefficients of the first semiconductor layer 310 and the second semiconductor layer 320 are opposite and are stacked in pairs to form a thermocouple 300;
forming a first etching window 321 penetrating the second semiconductor layer 320;
forming a third insulating medium layer 230 on the second semiconductor layer 320 to cover the second semiconductor layer 320;
forming a conductive layer 400, wherein the conductive layer 400 is in contact with the first semiconductor layer 310 and the second semiconductor layer 320;
forming an infrared absorption layer 500 on the third insulating dielectric layer 230;
forming a second etching window 511 penetrating the infrared absorption layer 500;
etching the third insulating medium layer 230 and the second insulating medium layer 220 through the second etching window 511 and the first etching window 321, forming a second cavity 231 communicated with the second etching window 511 between the second semiconductor layer 320 at the hot junction end a and the infrared absorption layer 500, and forming a first cavity 221 communicated with the first etching window 321 between the first semiconductor layer 310 at the hot junction end a and the second semiconductor layer 320, wherein the second cavity 231 is communicated with the first cavity 221;
forming a cavity 110 through the substrate 100;
the first insulating dielectric layer 210 is etched through the cavity 110 to expose the first semiconductor layer 310.
Specifically, the structure of the MEMS thermopile infrared sensor may refer to the description of the MEMS thermopile infrared sensor, and details thereof are not repeated herein.
As an example, the first insulating dielectric layer 210 is formed to include one or a combination of a silicon oxide layer and a silicon nitride layer; the second insulating dielectric layer 220 is formed to include one or a combination of a silicon oxide layer and a silicon nitride layer; the third insulating dielectric layer 230 is formed to include one or a combination of a silicon oxide layer and a silicon nitride layer; the infrared absorbing layer 500 is formed to include a silicon nitride infrared absorbing layer. The materials and structures of the first insulating dielectric layer 210, the second insulating dielectric layer 220, the third insulating dielectric layer 230, and the infrared absorption layer 500 are not limited thereto, and the first insulating dielectric layer 210, the second insulating dielectric layer 220, and the third insulating dielectric layer 230 form the insulating dielectric layer 300.
As an example, the center lines of the first etching window 321 and the second etching window 511 are formed on the same vertical line.
Specifically, through the first etching window 321 and the second etching window 511, the etching liquid can contact the insulating medium layer 300 through the first etching window 321 and the second etching window 511 to remove a part of the insulating medium layer 300 to form the first cavity 221 and the second cavity 231, and further when the center lines of the first etching window 321 and the second etching window 511 are located on the same vertical line, the etching efficiency can be improved, and the process control difficulty can be reduced. The insulating medium layer 300 at the hot junction end a can be removed by controlling the positions, the appearances, the etching process parameters and the like of the first etching window 321 and the second etching window 511, and only the insulating medium layer 300 at the cold junction end B is reserved, so that the heat conduction cross-sectional area can be reduced, the heat loss of the hot junction can be reduced, the temperature difference of the cold junction and the hot junction can be maintained, and the sensitivity of the sensor can be effectively improved.
As an example, the infrared absorption layer 500 is formed to include an infrared absorption part 510 on a hot junction a and a support part 520 outside the first and second semiconductor layers 310 and 320.
Specifically, in this embodiment, the infrared absorption layer 500 includes an infrared absorption part 510 located at the top and used for absorbing the infrared rays incident from the outside to generate heat, so that the thermocouple 300 generates a temperature difference, and the infrared absorption layer 500 further includes a support part 520, wherein the support part 520 is in contact with the outer sides of the first semiconductor layer 310 and the second semiconductor layer 320, so that the support part 520 can be used for supporting the first semiconductor layer 310, the second semiconductor layer 320, and the infrared absorption part 510, thereby preventing the thermocouple 300 and the infrared absorption part 510 from cracking, and improving the quality. Fig. 4a and 4b illustrate two structures of the supporting portion 520, wherein when the supporting portion 520 is a sectional type as shown in fig. 4b, the effective area can be further reduced. As shown in fig. 4a and 4b, when the infrared absorption layer 500 is prepared, the supporting portion 520 and the infrared absorption portion 510 may be formed step by step, for example, after the supporting portion 520 is formed, the infrared absorption portion 510 is formed. However, without limitation, as shown in fig. 3, the infrared absorption layer 500 may be formed by a single deposition and patterning process, such that the infrared absorption layer 500 includes the infrared absorption portion 510 on the top for absorbing the infrared rays incident from the outside and the supporting portion 520 covering the first semiconductor layer 310 and the second semiconductor layer 320, which is not limited herein.
As an example, the projection of the second semiconductor layer 320 formed in the vertical direction is located in the first semiconductor layer 310, forming a stepped thermocouple structure.
Specifically, when the projection of the second semiconductor layer 320 in the vertical direction is located in the first semiconductor layer 310, a stepped thermocouple structure may be formed, as shown in fig. 3, 4a and 4B, the stepped thermocouple structure may provide an accommodating space for the supporting portion 520, so that the supporting portion 520 may support the second semiconductor layer 320, the first semiconductor layer 310 and the infrared absorption portion 510, and thus the second semiconductor layer 320 and the first semiconductor layer 310 may form a stable structure through the supporting portion 520 and the insulating medium layer 200 located at the cold junction end B, and prevent cracking from occurring, so as to improve quality. In this embodiment, the stepped thermocouple structure is adopted, but the shape of the thermocouple is not limited to this.
As an example, a plurality of the thermocouples 300 are formed in the MEMS thermopile infrared sensor, and the thermocouples 300 are connected in series to constitute a thermocouple group; the formed distribution morphology of the thermocouple group includes a cross shape or a meter shape to increase a voltage difference generated by the thermocouple 300, thereby realizing accurate detection of external infrared rays by the thermopile. Fig. 5a to 5c illustrate the distribution of three thermocouple groups, but the number and distribution of the thermocouples 300 are not limited thereto.
As an example, the conductive layer 400 is formed to include one or a combination of an aluminum metal layer, a silver metal layer, a gold metal layer, a titanium metal layer, a tungsten metal layer, and a platinum metal layer, and the specific material and morphology may be selected according to the requirement, which is not limited herein.
In summary, the MEMS thermopile infrared sensor of the present invention includes a substrate, an insulating medium layer, a thermocouple, a conductive layer, and an infrared absorption layer, wherein the second semiconductor layer on the upper layer has a first etching window penetrating through the second semiconductor layer, the infrared absorption layer has a second etching window penetrating through the infrared absorption layer, two opposite surfaces of the first semiconductor layer and the second semiconductor layer at the cold junction end are both in contact with the insulating medium layer, a first cavity is formed between the first semiconductor layer and the second semiconductor layer at the hot junction end, a second cavity is formed between the second semiconductor layer and the infrared absorption layer at the hot junction end, and the first etching window, the first cavity, the second etching window, and the second cavity are connected. According to the utility model, the insulating medium layer at the hot junction end of the sensor is removed, and only the insulating medium layer at the cold junction end is reserved, so that the heat conduction cross section area can be reduced, the heat loss of the hot junction is reduced, the temperature difference of the hot junction and the cold junction is maintained, the sensitivity of the sensor is effectively improved, and the supporting part can be formed when the infrared absorption layer is formed, so that the thermocouple is supported, the fracture probability is reduced, and the quality is improved.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the utility model. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (6)
1. A MEMS thermopile infrared sensor, comprising:
a substrate having a cavity therethrough;
the insulating medium layer is positioned on the substrate;
the thermocouple comprises a first semiconductor layer with an A Seebeck coefficient and a second semiconductor layer with a B Seebeck coefficient, the Seebeck coefficients of the first semiconductor layer and the second semiconductor layer are opposite and are arranged in a pair-stacked mode, the second semiconductor layer located on the upper layer is provided with a first etching window penetrating through the second semiconductor layer, two opposite surfaces of the first semiconductor layer and the second semiconductor layer located on the cold junction end are both contacted with the insulating medium layer, a first cavity is arranged between the first semiconductor layer located on the hot junction end and the second semiconductor layer, and the first cavity is communicated with the first etching window;
a conductive layer in contact with the first semiconductor layer and the second semiconductor layer;
the infrared absorption layer is provided with a second etching window penetrating through the infrared absorption layer, a second cavity is arranged between the second semiconductor layer and the infrared absorption layer and located at a hot junction end, the second cavity is communicated with the second etching window, and the second cavity is communicated with the first cavity.
2. The MEMS thermopile infrared sensor of claim 1, wherein: the projection of the second semiconductor layer positioned on the upper layer in the vertical direction is positioned in the first semiconductor layer to form a stepped thermocouple structure.
3. The MEMS thermopile infrared sensor of claim 1, wherein: the infrared absorption layer comprises an infrared absorption part positioned on a hot junction end and a supporting part positioned on the outer sides of the first semiconductor layer and the second semiconductor layer.
4. The MEMS thermopile infrared sensor of claim 3, wherein: the support portion comprises a segmented support portion.
5. The MEMS thermopile infrared sensor of claim 1, wherein: the central lines of the first etching window and the second etching window are positioned on the same vertical line.
6. The MEMS thermopile infrared sensor of claim 1, wherein: the insulating medium layer comprises one or a combination of a silicon oxide layer and a silicon nitride layer; the infrared absorbing layer includes a silicon nitride infrared absorbing layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202121639814.1U CN215439669U (en) | 2021-07-19 | 2021-07-19 | MEMS thermopile infrared sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121639814.1U CN215439669U (en) | 2021-07-19 | 2021-07-19 | MEMS thermopile infrared sensor |
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| CN215439669U true CN215439669U (en) | 2022-01-07 |
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