CN215186681U - PMOS tube driving circuit - Google Patents
PMOS tube driving circuit Download PDFInfo
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- CN215186681U CN215186681U CN202121395430.XU CN202121395430U CN215186681U CN 215186681 U CN215186681 U CN 215186681U CN 202121395430 U CN202121395430 U CN 202121395430U CN 215186681 U CN215186681 U CN 215186681U
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Abstract
The application discloses PMOS manages drive circuit. The method comprises the following steps: the power supply comprises a first power supply, a second power supply, a third power supply, a first resistor, a second resistor, a third resistor, a fourth resistor, a PMOS (P-channel metal oxide semiconductor) tube and a triode; the first power supply is connected with a source electrode of the PMOS tube and one end of the first resistor; the second power supply is connected with the drain electrode of the PMOS tube; the other end of the first resistor is connected with a grid electrode of the PMOS tube and one end of the second resistor; the other end of the second resistor is connected with a collector of the triode; the third power supply is connected with the base electrode of the triode and one end of the third resistor; an emitting electrode of the triode is connected with one end of the fourth resistor; the other end of the third resistor and the other end of the fourth resistor are grounded. The driving voltage VGS of the PMOS tube is not affected by the first power supply, the stability of the MOS tube driving circuit is enhanced, the circuit structure is simple, and the production cost is reduced.
Description
Technical Field
The present disclosure relates generally to the field of PMOS transistor circuits, and more particularly, to a PMOS transistor driving circuit.
Background
The MOSFET has become an indispensable important component in the production of electronic products due to its advantages of low on-resistance, fast switching speed, etc., and has the shadow of the MOS transistor in mobile phones, notebook computers, bluetooth headsets, mobile power supplies, etc. However, for a MOSFET, the peak current, the rising rate, etc. output by the driving circuit and the driving pin all affect the switching performance of the MOSFET.
At present, a resistor voltage division mode controlled by a triode is mostly adopted in a general driving circuit of a PMOS (P-channel metal oxide semiconductor) tube, and the driving voltage VGS of the PMOS tube is related to the power supply voltage, so that if the control mode of the driving circuit meets the condition that the power supply voltage changes greatly, the driving voltage VGS is influenced by the power supply voltage. If the power voltage is low, the driving voltage VGS is reduced, which may cause the switching function of the MOS transistor to fail; if the power supply voltage is high, the driving voltage VGS is increased along with the power supply voltage, the driving voltage VGS may exceed VGS safe voltage of the MOS tube, loop power consumption is increased, and the like, so that the use scene of the PMOS tube is greatly limited.
Accordingly, there is a need in the art for improvements.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned drawbacks and deficiencies of the prior art, it is desirable to provide a PMOS transistor driving circuit that can meet the existing requirements for PMOS transistors.
Based on the utility model discloses an aspect, this application embodiment provides a PMOS pipe drive circuit, include:
the power supply comprises a first power supply, a second power supply, a third power supply, a first resistor, a second resistor, a third resistor, a fourth resistor, a PMOS (P-channel metal oxide semiconductor) tube and a triode;
the first power supply is connected with a source electrode of the PMOS tube and one end of the first resistor;
the second power supply is connected with the drain electrode of the PMOS tube;
the other end of the first resistor is connected with a grid electrode of the PMOS tube and one end of the second resistor;
the other end of the second resistor is connected with a collector of the triode;
the third power supply is connected with the base electrode of the triode and one end of the third resistor;
an emitting electrode of the triode is connected with one end of the fourth resistor;
the other end of the third resistor and the other end of the fourth resistor are grounded.
In another embodiment, the first power supply is a variable voltage power supply.
In the embodiment of the application, the function that the driving voltage VGS of the PMOS tube is not controlled by the power supply voltage can be realized, the problem of the power consumption of the driving loop is also considered under the condition that the driving resistance is small, the power consumption of the driving loop is reduced while the driving resistance is reduced, the functional stability of the MOS tube driving circuit is greatly enhanced, the circuit structure is simple, and the production cost is reduced on the premise that the function of the MOS tube driving circuit is stable.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
The invention will be more clearly understood from the following detailed description, with reference to the accompanying drawings, in which:
fig. 1 is a schematic structural diagram of a PMOS transistor driving circuit according to an embodiment of the present invention.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: unless specifically stated otherwise, the relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present invention.
Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
As shown in fig. 1, the PMOS transistor driving circuit includes:
the power supply comprises a first power supply B +, a second power supply VS, a third power supply VCC, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a PMOS (P-channel metal oxide semiconductor) transistor M1 and a triode Q1;
the first power supply B + is connected with the source electrode of the PMOS transistor M1 and one end of a first resistor R1;
the second power source VS is connected with the drain electrode of the PMOS tube M1;
the other end of the first resistor R1 is connected with the grid of the PMOS transistor M1 and one end of a second resistor R2;
the other end of the second resistor R2 is connected with the collector of the triode Q1;
the third power supply VCC is connected with the base of the triode Q1 and one end of a third resistor R3;
the emitter of the triode Q1 is connected with one end of the fourth resistor R4;
the other end of the third resistor R3 and the other end of the fourth resistor R4 are grounded.
Specifically, the first power supply B + is a variable voltage power supply.
In practical application, when the third power VCC is at a high level, the collector of the transistor Q1 is connected to the emitter, the voltage of the first power B + sequentially passes through the first resistor R1, the second resistor R2, the transistor Q1, the fourth resistor R4 and the ground to form a loop, and at this time, the voltages at the two ends of the first resistor R1 are the driving voltage of the PMOS transistor M1.
Specifically, an emitter of the transistor Q1 is connected to one end of the fourth resistor R4 to form a current negative feedback, so as to form an emitter follow current of the transistor Q1;
the collector current of the triode Q1 is as follows:
Ic≈(VCC-VBE(on))/R4；
where VCC is the third supply VCC voltage, VBE(on)The base electrode and the emitter electrode of the triode Q1 are conducted voltage;
the driving voltage of the PMOS tube M1 is as follows:
VGS＝R1*Ic；
in the formula, R1Is a first resistor R1, IcIs the collector current of transistor Q1.
Specifically, as can be seen from the above formula, the driving voltage VGS of the PMOS transistor M1 is independent of the first power supply B +, and the driving voltage VGS of the PMOS transistor M1 is not affected by the first power supply B +;
specifically, the total power consumption I ═ Ic in the driving loop of the entire PMOS transistor M1. Since Ic is related to the third power VCC and the fourth resistor R4, under the condition that the third power VCC is constant, the power consumption of the whole driving circuit can be controlled by controlling the resistance of the fourth resistor R4, and meanwhile, the resistance ratios of the first resistor R1 and the fourth resistor R4 are adjusted to control the driving voltage VGS of the PMOS transistor M1. In a specific embodiment, for example, if the third power source VCC is 3.3V and the fourth resistor R4 has a resistance of 100K, Ic is 30uA, and at this time, if the first resistor R1 is set to 200K, the driving voltage VGS of the PMOS transistor M1 is 6V, and on this basis, the driving voltage VGS of the PMOS transistor M1 can meet the requirement that the driving voltage VGS of the PMOS transistor M1 is not changed by the first power source B +, only the first power source B + needs to be controlled to be more than 10V, and the entire driving loop has only 30uA current, and the driving resistor of the PMOS transistor M1 has only 100K, so that there is no concern about the possibility of misoperation of the PMOS transistor M1 due to leakage currents of the PMOS transistor M1 and the transistor Q1, and the use is more stable and reliable.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the utility model. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (2)
1. A PMOS transistor driving circuit, comprising:
the power supply comprises a first power supply, a second power supply, a third power supply, a first resistor, a second resistor, a third resistor, a fourth resistor, a PMOS (P-channel metal oxide semiconductor) tube and a triode;
the first power supply is connected with a source electrode of the PMOS tube and one end of the first resistor;
the second power supply is connected with the drain electrode of the PMOS tube;
the other end of the first resistor is connected with a grid electrode of the PMOS tube and one end of the second resistor;
the other end of the second resistor is connected with a collector of the triode;
the third power supply is connected with the base electrode of the triode and one end of the third resistor;
an emitting electrode of the triode is connected with one end of the fourth resistor;
the other end of the third resistor and the other end of the fourth resistor are grounded.
2. The PMOS transistor driver circuit of claim 1, wherein said first power supply is a variable voltage power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121395430.XU CN215186681U (en) | 2021-06-23 | 2021-06-23 | PMOS tube driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121395430.XU CN215186681U (en) | 2021-06-23 | 2021-06-23 | PMOS tube driving circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215186681U true CN215186681U (en) | 2021-12-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121395430.XU Active CN215186681U (en) | 2021-06-23 | 2021-06-23 | PMOS tube driving circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215186681U (en) |
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2021
- 2021-06-23 CN CN202121395430.XU patent/CN215186681U/en active Active
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