CN215184483U - Box body and power amplifier comprising same and used for coaxial conversion of Ka frequency band waveguide - Google Patents
Box body and power amplifier comprising same and used for coaxial conversion of Ka frequency band waveguide Download PDFInfo
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- CN215184483U CN215184483U CN202121304756.7U CN202121304756U CN215184483U CN 215184483 U CN215184483 U CN 215184483U CN 202121304756 U CN202121304756 U CN 202121304756U CN 215184483 U CN215184483 U CN 215184483U
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Abstract
The utility model provides a box body and a power amplifier comprising the same and used for coaxial conversion of Ka frequency band waveguide, wherein the power amplifier comprises a power amplifier circuit, a glass insulator and a feedthrough capacitor, and the box body comprises a box body, an inner cover plate and two waveguide cover plates; the box body comprises a left side wall, a right side wall, a front side wall, a rear side wall, a bottom plate and a top plate, wherein the left side wall, the right side wall, the front side wall, the rear side wall and the bottom plate are connected to form a containing cavity with an upward opening; the cavity is provided with an installation cavity for installing a power amplifier circuit; the left end and the right end of the installation cavity are both provided with waveguide cavities; the two waveguide cover plates are respectively correspondingly matched with the two waveguide cavities and used for sealing the waveguide cavities and forming waveguides with the waveguide cavities; and the inner cover plate is matched with the mounting cavity and is used for sealing the mounting cavity. The utility model discloses realize that microwave power amplifier is totally closed, thereby improve microwave power amplifier's closure and improve power amplifier's reliability under adverse circumstances.
Description
Technical Field
The utility model relates to the field of communication technology, specifically, relate to a box body and including its power amplifier of Ka frequency channel waveguide coaxial switching.
Background
With the continuous development of satellite communication technology in China, the millimeter wave technology is widely applied to modern satellite communication, and the requirements on broadband, high capacity, interference resistance and miniaturization are more and more urgent. The rectangular waveguide is an important transmission form of a millimeter wave frequency band, and has the advantages of high Q value and low insertion loss, so that the rectangular waveguide is widely applied to antennas, measurement systems and transmission parts, and the connection among various existing millimeter wave integrated systems, the millimeter wave measurement systems and devices mainly adopt a waveguide transmission mode, so that the quality of the performance of a transition structure from the waveguide to the microstrip line becomes a key factor influencing the performance of the system.
The traditional microwave power amplifier generally comprises a glass insulator, a microwave power amplifier, a chip capacitor, a microwave medium and the like, the assembly process is complex, and the yield and the production efficiency are low; because the wavelength of the Ka band is short, the chip of the microwave power amplifier in the Ka band generally takes a bare chip form, while the package of the conventional microwave power amplifier generally takes a tin seal form, and the sealing performance is difficult to be ensured in a severe environment test process.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at overcoming among the above-mentioned prior art at least one kind defect (not enough), provide a box body and including its Ka frequency channel waveguide coaxial switching's power amplifier, realize that microwave power amplifier is totally closed, thereby improve microwave power amplifier's closure and improve power amplifier's reliability under adverse circumstances.
On one hand, the box body is suitable for installing a power amplifier based on Ka frequency band waveguide coaxial conversion, the power amplifier comprises a power amplifier circuit, a glass insulator and a feedthrough capacitor, and the box body comprises a box body, an inner cover plate and two waveguide cover plates;
the box body comprises a left side wall, a right side wall, a front side wall, a rear side wall, a bottom plate and a top plate, wherein the left side wall, the right side wall, the front side wall, the rear side wall and the bottom plate are connected to form a cavity with an upward opening, and the top plate and the cavity are installed in a matched mode to seal the cavity; the accommodating cavity is provided with an installation cavity for installing the power amplifier circuit; the front side wall, the rear side wall, the bottom plate and the top plate respectively extend leftwards, a waveguide cavity with a left opening and a downward waveguide port is formed together with the left side wall, the front side wall, the rear side wall, the bottom plate and the top plate respectively extend rightwards, another waveguide cavity with a right opening and a downward waveguide port is formed together with the right side wall, and the two waveguide cavities are located at the left end and the right end of the installation cavity;
the two waveguide cover plates are correspondingly matched with the two waveguide cavities respectively, are used for sealing the waveguide cavities and form waveguides with the waveguide cavities;
the inner cover plate is matched with the mounting cavity and used for sealing the mounting cavity;
the left side wall and the right side wall are respectively provided with a first mounting hole for mounting the glass insulator;
and the front side wall and the rear side wall are respectively provided with a second mounting hole for mounting the feedthrough capacitor.
The microwave power amplifier is installed in the box body, the microwave power amplifier is sealed, and the sealing performance of the microwave power amplifier is improved, so that the reliability of the power amplifier in severe environment is improved.
Further, the inner surfaces of the first mounting hole and the second mounting hole are provided with gold plating layers.
The gold-plated layer is arranged on the inner surface of the first mounting hole, so that the glass insulator can be fixedly mounted in the first mounting hole, the stability of the glass insulator is improved, and the loss of the power amplifier is reduced; the inner surface of the second mounting hole is provided with the gold plating layer, so that the feedthrough capacitor can be fixedly mounted in the second mounting hole, and the loss of the power amplifier is reduced.
Further, the first mounting hole comprises a non-air section and an air section which are connected with each other, the non-air section is used for fixing the body of the glass insulator, and the air section is used for accommodating a core wire at one end of the glass insulator so as to form a coaxial line.
The interconnected non-air section and air section form a first mounting hole for mating mounting of the glass insulator.
Furthermore, the bottom of the mounting cavity is provided with a groove for mounting or accommodating part of the power amplifier circuit.
The bottom of the mounting cavity is provided with the groove, so that part of the power amplifier circuit can be conveniently mounted or accommodated, and the part of the power amplifier circuit mounted or accommodated in the groove is flush with the rest of the power amplifier circuit.
Furthermore, the recess depth of the groove can make a part of the power amplifier circuit installed or accommodated in the groove flush with the rest of the power amplifier circuit.
The recess depth of the groove can enable the power amplifier circuit to be flush, so that signals on the power amplifier can be transmitted on the same plane conveniently.
On one hand, the power amplifier based on Ka frequency band waveguide coaxial conversion is provided, and comprises the box body, the power amplifier circuit, the glass insulator and the feedthrough capacitor;
the power amplifier circuit is arranged in the mounting cavity;
the glass insulator penetrates through the first mounting hole, and one end of the glass insulator is welded with the power amplifier circuit;
the feedthrough capacitor penetrates through the second mounting hole, and one end of the feedthrough capacitor is welded with the power amplifier circuit.
The box body is provided with an inner cover plate which is matched with the installation cavity to be installed to seal the installation cavity, and a top plate which is matched with the containing cavity to be installed to seal the containing cavity, so that the installation cavity is doubly sealed, the power amplifier circuit installed in the installation cavity can be in a sealed environment, the purpose of totally sealing the power amplifier circuit is achieved, and the sealing performance of the microwave power amplifier is improved, and therefore the reliability of the power amplifier under a severe environment is improved.
On the other hand, the power amplifier based on Ka frequency band waveguide coaxial conversion comprises the box body, the PCB, the glass insulator and the feedthrough capacitor;
the PCB comprises a substrate and a power amplifier circuit, wherein the power amplifier circuit comprises a power amplifier chip and a chip circuit electrically connected with the power amplifier chip;
the substrate is arranged in the mounting cavity, and the chip circuit is welded on the substrate;
the substrate is provided with a hollow part matched with the groove at a position corresponding to the groove, the groove is paved with a conducting layer, and the power amplifier chip is arranged on the conducting layer and positioned in the hollow part;
the glass insulator penetrates through the first mounting hole, and one end of the glass insulator is welded with the chip circuit;
the feedthrough capacitor penetrates through the second mounting hole, and one end of the feedthrough capacitor is welded with the chip circuit.
The box body is provided with an inner cover plate which is matched with the installation cavity to seal the installation cavity, and a top plate which is matched with the cavity to seal the cavity, so that the installation cavity is sealed doubly, the PCB arranged in the installation cavity can be in a sealed environment, the purpose of totally sealing the PCB is realized, the sealing performance of the microwave power amplifier is improved, and the reliability of the power amplifier in a severe environment is improved; through at the base plate in the position that the recess corresponds set up with recess assorted well kenozooecium to lay the conducting layer in the recess, make power amplifier chip install on the conducting layer and be located well kenozooecium, chip circuit welding is on the base plate, thereby the upper surface that can be convenient for power amplifier chip can flush with the upper surface of base plate, ensures that power amplifier chip and chip circuit match well.
Further, the chip circuit includes an internal power supply circuit and a microstrip line, the internal power supply circuit and the microstrip line are welded on the substrate, the power amplifier chip is electrically connected with the internal power supply circuit through a chip capacitor, the chip capacitor is mounted on the conductive layer and located in the hollow portion, or the chip capacitor is welded on the substrate, the power amplifier chip is respectively electrically connected with the chip capacitor and the microstrip line through a gold wire, and the chip capacitor is welded with the internal power supply circuit through a gold wire;
one end of the glass insulator is welded with the microstrip line;
one end of the feedthrough capacitor is welded with the internal power supply circuit.
By adopting the gold wire to connect each part of the chip circuit, the power amplifier chip and the chip capacitor, the micro-assembly of each part of the chip circuit, the power amplifier chip and the chip capacitor is realized, the installation and the combination are convenient, and the volume of the power amplifier can be reduced.
Furthermore, the microstrip line is broken in the hollow part to form a first microstrip line and a second microstrip line, and the first end of the first microstrip line and the first end of the second microstrip line are respectively welded with the power amplifier chip through gold wires;
one end of one glass insulator is welded with the second end of the first microstrip line, and one end of the other glass insulator is welded with the second end of the second microstrip line.
Furthermore, the first microstrip line and/or the second microstrip line are provided with a bending part, so that the second end of the first microstrip line and the second end of the second microstrip line are located on the same straight line.
The first microstrip line and the second microstrip line are provided with bending parts, so that the second end of the first microstrip line and the second end of the second microstrip line are positioned on the same straight line, and the coaxial conversion of the microstrip signal and the waveguide signal is facilitated.
Compared with the prior art, the beneficial effects of the utility model are that: the utility model discloses a box body is equipped with and matches the inner decking of installation in order to seal the installation cavity with the installation cavity, and is equipped with and holds the roof that the chamber matches the installation in order to seal the chamber to carry out dual seal to the installation cavity, can make the power amplifier circuit who installs in the installation cavity be in sealed environment, realize the totally closed purpose of power amplifier circuit, thereby improve microwave power amplifier's closure and improve power amplifier's reliability under adverse circumstances.
Drawings
Fig. 1 is an exploded view of the power amplifier according to the present invention;
FIG. 2 is a cross-sectional view of the cartridge body of the present invention;
FIG. 3 is a structural diagram of the PCB board of the present invention;
fig. 4 is a cross-sectional view of a waveguide according to the present invention.
Reference numerals: the structure comprises a top plate 1, an inner cover plate 2, an installation cavity 3, a groove 31, a waveguide cover plate 4, a waveguide cavity 5, a first installation hole 6, a non-air section 61, an air section 62, a second installation hole 7, a PCB 8, a power amplifier chip 81, a substrate 82, a chip capacitor 83, an internal power supply circuit 84, a first microstrip line 85, a second microstrip line 86, a glass insulator 9 and a feedthrough capacitor 10.
Detailed Description
The drawings of the present invention are for illustration purposes only and are not to be construed as limiting the invention. For a better understanding of the following embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
In the present invention, unless otherwise explicitly specified or limited, terms such as "mounted," "connected," and "fixed" are to be understood in a broad sense, and may be, for example, fixedly connected, detachably connected, or integrated; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
Example 1
As shown in fig. 1 and fig. 2, fig. 1 is an exploded view of the power amplifier of the present embodiment, and fig. 2 is a cross-sectional view of the case of the present embodiment; the box body is suitable for installing a power amplifier based on Ka frequency band waveguide coaxial conversion, the power amplifier comprises a power amplifier circuit, a glass insulator 9 and a feedthrough capacitor 10, and the box body comprises a box body, an inner cover plate 2 and two waveguide cover plates 4;
the box body comprises a left side wall, a right side wall, a front side wall, a rear side wall, a bottom plate and a top plate 1, wherein the left side wall, the right side wall, the front side wall, the rear side wall and the bottom plate are connected to form a containing cavity with an upward opening, and the top plate 1 and the containing cavity are installed in a matched mode to seal the containing cavity; the cavity is provided with an installation cavity 3 for installing a power amplifier circuit; the front side wall, the rear side wall, the bottom plate and the top plate 1 extend leftwards respectively, a waveguide cavity 5 with a left opening and a downward waveguide port is formed together with the left side wall, the front side wall, the rear side wall, the bottom plate and the top plate 1 extend rightwards respectively, another waveguide cavity 5 with a right opening and a downward waveguide port is formed together with the right side wall, and the two waveguide cavities 5 are positioned at the left end and the right end of the installation cavity 3;
the two waveguide cover plates 4 are correspondingly matched with the two waveguide cavities 5 respectively and used for sealing the waveguide cavities 5 and forming waveguides with the waveguide cavities 5;
the inner cover plate 2 is installed in a matching way with the installation cavity 3 and is used for sealing the installation cavity 3;
the left side wall and the right side wall are respectively provided with a first mounting hole 6 for mounting a glass insulator 9;
the front side wall and the rear side wall are respectively provided with a second mounting hole 7 for mounting the feedthrough capacitor 10.
Specifically, the general shape of the box body is a cuboid, the left side wall, the right side wall, the front side wall, the rear side wall and the bottom plate of the box body are connected to form a cavity with an upward opening, an installation cavity 3 is arranged in the cavity, the inner cover plate 2 is installed in a matching manner with the installation cavity 3, the top plate 1 is installed in a matching manner with the cavity, and specifically, the installation cavity 3 and the inner cover plate 2 are both in a cross shape; the front side wall, the rear side wall, the bottom plate and the top plate 1 respectively extend leftwards and form a waveguide cavity 5 with a left opening and a downward waveguide port together with the left side wall, the front side wall, the rear side wall, the bottom plate and the top plate 1 respectively extend rightwards and form a waveguide cavity 5 with a right opening and a downward waveguide port together with the right side wall, the two waveguide cover plates 4 are respectively correspondingly matched with the two waveguide cavities 5 to install the closed waveguide cavity 5 and form waveguides with the waveguide cavity 5, concretely, the two waveguide cavities 5 are symmetrically arranged at the left end and the right end of the installation cavity 3, and the two ends of the two waveguide cover plates 4 are symmetrically installed with the waveguide cavity 5 in a matching way through screws;
specifically, the first mounting hole 6 on the left side wall and the first mounting hole 6 on the right side wall are symmetrically arranged with respect to the geometric center of the mounting cavity 3, so that the glass insulator 9 mounted in the first mounting hole 6 on the left side wall and the glass insulator 9 mounted in the first mounting hole 6 on the right side wall are symmetrical; the number of the second mounting holes 7 on the front side wall and the number of the second mounting holes 7 on the rear side wall may be the same or different; when the number of the second mounting holes 7 at the front sidewall is greater than 1, the second mounting holes 7 at the front sidewall may be symmetrically disposed with respect to the geometric center of the front sidewall; when the number of the second mounting holes 7 positioned on the rear side wall is more than 1, the second mounting holes 7 positioned on the rear side wall can be symmetrically arranged with respect to the geometric center of the rear side wall; when the number of the second mounting holes 7 on the front side wall is the same as that of the second mounting holes 7 on the rear side wall, the second mounting holes 7 on the front side wall and the second mounting holes 7 on the rear side wall are symmetrically arranged along the geometric center of the mounting cavity 3; it is understood that the number of the second mounting holes 7 is set according to the number of the feedthrough capacitors 10 required to be connected to the power amplifier circuit.
In the specific implementation process of the embodiment, the box body can be made of aluminum and adopts natural color conductive oxidation, the width of the whole box body is 23.1mm, the length is 35mm, and the height is 9.5mm, the inner cover plate 2 is installed in a matching manner with the installation cavity 3 through laser welding to seal the installation cavity 3, and the top plate 1 is fixedly installed on the containing cavity through screws to seal the containing cavity, so that double sealing of the installation cavity 3 is realized, the purpose of totally sealing the power amplifier when the power amplifier is installed in the box body is realized, and the sealing performance of the microwave power amplifier is improved, so that the reliability of the power amplifier in a severe environment is improved; the two waveguide cover plates 4 are respectively correspondingly matched with the two waveguide cavities 5 through screws to seal the waveguide cavities 5 to form waveguides, the waveguides are standard WR28 waveguides, the length of a waveguide port is 7.1mm, and the width of the waveguide port is 3.55 mm; the number of the second mounting holes 7 on the front side wall is the same as that of the second mounting holes 7 on the rear side wall, and the second mounting holes 7 on the front side wall and the second mounting holes 7 on the rear side wall are symmetrically arranged along the geometric center of the mounting cavity 3.
In one embodiment, the inner surfaces of the first mounting hole 6 and the second mounting hole 7 are both provided with gold plating.
The gold-plated layer is arranged on the inner surface of the first mounting hole 6, so that the glass insulator 9 can be fixedly mounted in the first mounting hole 6, the stability of the glass insulator 9 is improved, and the loss of the power amplifier is reduced; the inner surface of the second mounting hole 7 is provided with a gold plating layer, so that the feedthrough capacitor 10 can be fixedly mounted in the second mounting hole 7, and the loss of the power amplifier is reduced.
In one embodiment, the first mounting hole 6 comprises a non-air section 61 and an air section 62 which are connected with each other, the non-air section 61 is used for fixing the body of the glass insulator 9, and the air section 62 is used for accommodating one end core wire of the glass insulator 9 to form a coaxial wire.
Specifically, the non-air section 61 and the air section 62 are cylindrical, the diameter of the non-air section 61 is 1.94mm, which is slightly larger than the diameter of the glass insulator 9, so that the glass insulator 9 can be fixed conveniently, and the diameter of the air section 62 is 0.7 mm.
The interconnected non-air section 61 and air section 62 form a first mounting hole 6 for mating mounting of the glass insulator 9.
In one embodiment, the bottom of the mounting cavity 3 is provided with a groove 31 for mounting or accommodating a part of the power amplifier circuit.
In one embodiment, the recess 31 may have a depth such that a portion of the power amplifier circuit mounted or received in the recess is flush with the remaining portion of the power amplifier circuit.
It can be understood that the power amplifier circuit device with smaller thickness can be installed outside the groove 31, and the power amplifier circuit device with larger thickness can be installed inside the groove 31, or the power amplifier circuit device with smaller thickness but dense routing with the power amplifier circuit device with larger thickness can also be installed inside the groove 31; the groove 31 may be, but is not limited to, located in the middle of the bottom of the mounting cavity 3, the depth of the groove 31 may be, but is not limited to, 0.3mm, the width of the groove 31 may be the maximum width of the power amplifier circuit device mounted in the groove 31 plus a mounting error, and the mounting error may be 0.1 mm; a conductive layer is laid in the groove 31, the conductive layer may be but not limited to a molybdenum-copper layer, and the thickness of the molybdenum-copper layer may be but not limited to 0.5mm, it can be understood that the recess depth of the groove 31 and the thickness of the conductive layer may be specifically set according to the thickness of the power amplifier circuit device, which is not limited herein; the bottom of the mounting cavity 3 is provided with a groove 31 for mounting or accommodating the power amplifier circuit, so that part of the power amplifier circuit can be conveniently mounted or accommodated, and the whole power amplifier circuit is flush.
Example 2
As shown in fig. 1, the present embodiment provides a power amplifier based on Ka-band waveguide coaxial conversion, including the box body, the power amplifier circuit, the glass insulator 9, and the feedthrough capacitor 10 in embodiment 1;
the power amplifier circuit is arranged in the mounting cavity 3;
the glass insulator 9 penetrates through the first mounting hole 6, and one end of the glass insulator is welded with the power amplifier circuit;
and the feedthrough capacitor 10 penetrates through the second mounting hole 7, and one end of the feedthrough capacitor is welded with the power amplifier circuit.
Specifically, in this embodiment, the power amplifier module further includes a PCB 8 provided with a power amplifier circuit, the PCB 8 may be fixedly mounted in the mounting cavity 3 by using a conductive adhesive, the glass insulator 9 is inserted into the first mounting hole 6, one end of the glass insulator 9 is welded to the power amplifier circuit, conductive silver paste is injected into the first mounting hole 6, and after the conductive silver paste is dried, the glass insulator 9 is fixedly mounted on the first mounting hole 6, so as to achieve the purpose of sealing the first mounting hole 6; similarly, the feedthrough capacitor 10 is arranged in the second mounting hole 7 in a penetrating manner, one end of the feedthrough capacitor 10 is welded with the power amplifier circuit, conductive silver paste is injected into the second mounting hole 7, and the feedthrough capacitor 10 can be fixedly mounted on the second mounting hole 7 after the conductive silver paste is dried, so that the purpose of sealing the second mounting hole 7 is achieved; after the PCB 8 is installed in the installation cavity 3 and the feedthrough capacitor 10 is fixedly installed in the second installation hole 7, the inner cover plate 2 is welded on the installation cavity 3 through laser welding, after the glass insulator 9 is fixedly installed in the first installation hole 6, the waveguide cover plate 4 and the waveguide cavity 5 are installed in a matched mode through screws, and finally the top plate 1 is fixedly installed on the accommodating cavity through screws.
The box body is provided with an inner cover plate 2 which is matched with the installation cavity 3 and installed to seal the installation cavity 3, and is provided with a top plate 1 which is matched with the containing cavity and installed to seal the containing cavity, so that the installation cavity 3 is doubly sealed, the power amplifier circuit installed in the installation cavity 3 can be in a sealed environment, the purpose of totally sealing the power amplifier circuit is achieved, and the sealing performance of the microwave power amplifier is improved, and therefore the reliability of the power amplifier under a severe environment is improved.
Example 3
As shown in fig. 1, the present embodiment provides a power amplifier based on Ka band waveguide coaxial conversion, including a case, a PCB 8, a glass insulator 9, and a feedthrough capacitor 10 as in embodiment 1;
the PCB 8 comprises a substrate 82 and a power amplifier circuit, wherein the power amplifier circuit comprises a power amplifier chip 81 and a chip circuit electrically connected with the power amplifier chip 81; a substrate 82 mounted in the mounting cavity 3, a chip circuit being soldered on the substrate 82; the substrate 82 is provided with a hollow part matched with the groove 31 at a position corresponding to the groove 31, a conducting layer is laid on the groove 31, and the power amplifier chip 81 is arranged on the conducting layer and positioned in the hollow part;
the glass insulator 9 penetrates through the first mounting hole 6, and one end of the glass insulator is welded with the chip circuit;
and the feedthrough capacitor 10 penetrates through the second mounting hole 7, and one end of the feedthrough capacitor is welded with the chip circuit.
Specifically, in this embodiment, the substrate 82 of the PCB 8 may be fixedly mounted in the mounting cavity 3 by using a conductive adhesive, a part of the chip circuits may be soldered on the substrate 82, a part of the chip circuits may be mounted in the groove 31, or all the chip circuits may be soldered on the substrate 82, which is not limited herein; specifically, the substrate 82 may be a rogers 5880 substrate 82, and a conductive layer may be laid on the substrate 82, and the conductive layer may be, but is not limited to, a copper layer, where the thickness of the substrate 82 may be 0.254mm, and the thickness of the copper layer may be 0.50Z; in addition, a gold plating layer is also arranged on the surface of the copper layer, so that the conductivity of the surface of the substrate 82 can be improved; specifically, the groove 31 may be, but is not limited to, located in the middle of the bottom of the mounting cavity 3, the depth of the groove 31 may be, but is not limited to, 0.3mm, the width of the groove 31 may be the maximum width of the power amplifier circuit device mounted in the groove 31 plus a mounting error, and the mounting error may be 0.1 mm; laying a conductive layer in the groove 31, wherein the conductive layer can be but is not limited to a molybdenum-copper layer, and the thickness of the molybdenum-copper layer can be but is not limited to 0.5mm, and it can be understood that the recess depth of the groove 31 and the thickness of the conductive layer are specifically set according to the thickness of the substrate 82 and the thickness of the power amplifier circuit device, so that the upper surface of the power amplifier circuit device installed or accommodated in the groove 31 is flush with the upper surface of the PCB board 8; the glass insulator 9 penetrates through the first mounting hole 6, one end of the glass insulator 9 is welded with the PCB 8, conductive silver paste is injected into the first mounting hole 6, and the glass insulator 9 can be fixedly mounted on the first mounting hole 6 after the conductive silver paste is dried, so that the purpose of sealing the first mounting hole 6 is achieved; similarly, the feedthrough capacitor 10 is arranged in the second mounting hole 7 in a penetrating manner, one end of the feedthrough capacitor 10 is welded with the PCB 8, conductive silver paste is injected into the second mounting hole 7, and the feedthrough capacitor 10 can be fixedly mounted on the second mounting hole 7 after the conductive silver paste is dried, so that the purpose of sealing the second mounting hole 7 is achieved; after the PCB 8 is installed in the installation cavity 3 and the feedthrough capacitor 10 is fixedly installed in the second installation hole 7, the inner cover plate 2 is welded on the installation cavity 3 through laser welding, after the glass insulator 9 is fixedly installed in the first installation hole 6, the waveguide cover plate 4 and the waveguide cavity 5 are installed in a matched mode through screws, and finally the top plate 1 is fixedly installed on the accommodating cavity through screws.
The box body is provided with an inner cover plate 2 which is matched with the mounting cavity 3 to seal the mounting cavity 3, and a top plate 1 which is matched with the cavity to seal the cavity, so that the mounting cavity 3 is sealed doubly, a PCB 8 mounted in the mounting cavity 3 can be in a sealed environment, the purpose of totally sealing the PCB 8 is realized, and the sealing performance of the microwave power amplifier is improved, so that the reliability of the power amplifier in a severe environment is improved; through at base plate 82 at the position that recess 31 corresponds set up with recess 31 assorted well kenozooecium to lay the conducting layer in recess 31, make power amplifier chip 81 install on the conducting layer and be located well kenozooecium, chip circuit welds on base plate 82, thereby the upper surface that can be convenient for power amplifier chip 81 can flush with the upper surface of base plate 82, ensures that power amplifier chip 81 and chip circuit match well.
In one embodiment, as shown in fig. 3, which is a structural diagram of the PCB 8, the chip circuit includes an internal power supply circuit 84 and a microstrip line, the internal power supply circuit 84 and the microstrip line are welded on the substrate 82, the power amplifier chip 81 is electrically connected to the internal power supply circuit 84 through a chip capacitor 83, the chip capacitor 83 is installed on the conductive layer and located in the hollow portion, or the chip capacitor 83 is welded on the substrate 82, the power amplifier chip 81 is electrically connected to the chip capacitor 83 and the microstrip line through a gold wire, respectively, and the chip capacitor 83 is welded to the internal power supply circuit 84 through a gold wire;
one end of the glass insulator 9 is welded with the microstrip line;
one end of the feedthrough capacitor 10 is soldered to the internal power supply circuit 84.
Specifically, the chip circuit includes four internal power supply circuits 84, specifically, two gate voltage power supply circuits and two leakage voltage power supply circuits, wherein the two gate voltage power supply circuits are located on one side of the hollow portion and located on two sides of the microstrip line respectively, and the two leakage voltage power supply circuits are located on the other side of the hollow portion and located on two sides of the microstrip line respectively; the two grid voltage supply circuits are connected with a resistor and a first capacitor, the first capacitor is grounded, the two leakage voltage supply circuits are connected with a second capacitor, the second capacitor is grounded and is a filter capacitor, and each internal supply circuit 84 is correspondingly connected with a feedthrough capacitor 10; the width of the microstrip line is about 0.8mm, the impedance is 50 ohms, the air section 62 and the core wire at one end of the glass insulator 9 form a coaxial line of 50 ohms, and the microstrip line and the coaxial line are both 50 ohms and the characteristic impedances of the microstrip line and the coaxial line are matched; specifically, a probe at one end of the glass insulator 9 passes through the first mounting hole 6 and is welded on the microstrip line, a probe at the other end extends into the waveguide to form a coupling probe, the waveguide comprises a short-circuit surface and a long-circuit surface, the distance d between the probe penetrating into the waveguide and the section of the road surface is 2.246mm, which is about one fourth of the operating wavelength of the waveguide, and specifically, as shown in fig. 4, the cross-sectional view of the waveguide is shown.
By adopting the gold wire to connect each part of the chip circuit, the power amplifier chip 81 and the chip capacitor 83, the micro-assembly of each part of the chip circuit, the power amplifier chip 81 and the chip capacitor 83 is realized, the installation and the combination are convenient, and the volume of the power amplifier can be reduced.
In one embodiment, the microstrip lines are broken in the hollow portion to form a first microstrip line 85 and a second microstrip line 86, and a first end of the first microstrip line 85 and a first end of the second microstrip line 86 are respectively welded with the power amplifier chip 81 through gold wires;
one end of one glass insulator 9 is welded to the second end of the first microstrip line 85, and one end of the other glass insulator 9 is welded to the second end of the second microstrip line 86.
Specifically, one end of one glass insulator 9 is welded to the second end of the first microstrip line 85, the first end of the first microstrip line 85 is welded to the power amplifier chip 81 through a gold wire, the first end of the second microstrip line 86 is welded to the power amplifier chip 81, the second end of the second microstrip line 86 is connected to one end of the other glass insulator 9, so that a waveguide coaxial switching microstrip path is formed, a signal input to a waveguide by an external link is switched to the first microstrip line 85 through a coaxial line of the waveguide, namely one glass insulator 9, so that the signal is switched from a waveguide signal to a microstrip signal, power amplification is performed through the power amplifier chip 81, and then the signal is switched to a coaxial line of the other waveguide through the second microstrip line 86 at an output end, so that the signal is transmitted in the waveguide cavity 5.
In one embodiment, the first microstrip line 85 and/or the second microstrip line 86 are provided with a bending portion, so that the second end of the first microstrip line 85 and the second end of the second microstrip line 86 are located on the same straight line.
Specifically, the power amplifier chip 81 adopted in this embodiment is the TGA2595, and since the end of the power amplifier chip 81 connected to the first end of the first microstrip line 85 and the end connected to the second end of the second microstrip line 86 are not on the same straight line, both the first microstrip line 85 and the second microstrip line 86 are provided with a bending portion, so that the second end of the first microstrip line 85 and the second end of the second microstrip line 86 are located on the same straight line; it can be understood that whether the first microstrip line 85 and/or the second microstrip line 86 has a bent portion may be specifically set according to the power amplifier chip 81 used.
It is obvious that the above embodiments of the present invention are only examples for clearly illustrating the technical solutions of the present invention, and are not limitations to the specific embodiments of the present invention. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.
Claims (10)
1. A box body is suitable for installing a power amplifier based on Ka frequency band waveguide coaxial conversion, and the power amplifier comprises a power amplifier circuit, a glass insulator and a feedthrough capacitor;
the box body comprises a left side wall, a right side wall, a front side wall, a rear side wall, a bottom plate and a top plate, wherein the left side wall, the right side wall, the front side wall, the rear side wall and the bottom plate are connected to form a cavity with an upward opening, and the top plate and the cavity are installed in a matched mode to seal the cavity; the accommodating cavity is provided with an installation cavity for installing the power amplifier circuit; the front side wall, the rear side wall, the bottom plate and the top plate respectively extend leftwards, a waveguide cavity with a left opening and a downward waveguide port is formed together with the left side wall, the front side wall, the rear side wall, the bottom plate and the top plate respectively extend rightwards, another waveguide cavity with a right opening and a downward waveguide port is formed together with the right side wall, and the two waveguide cavities are located at the left end and the right end of the installation cavity;
the two waveguide cover plates are correspondingly matched with the two waveguide cavities respectively, are used for sealing the waveguide cavities and form waveguides with the waveguide cavities;
the inner cover plate is matched with the mounting cavity and used for sealing the mounting cavity;
the left side wall and the right side wall are respectively provided with a first mounting hole for mounting the glass insulator;
and the front side wall and the rear side wall are respectively provided with a second mounting hole for mounting the feedthrough capacitor.
2. The box body of claim 1, wherein the inner surfaces of the first mounting hole and the second mounting hole are provided with gold plating layers.
3. A box body according to claim 1, wherein the first mounting hole comprises a non-air section and an air section which are connected with each other, the non-air section is used for fixing the body of the glass insulator, and the air section is used for accommodating one end core wire of the glass insulator to form a coaxial wire.
4. A case according to any one of claims 1 to 3, wherein a recess is formed at the bottom of the mounting cavity for receiving or accommodating a portion of the power amplifier circuit.
5. A case according to claim 4, wherein the recess has a depth such that a portion of the power amplifying circuit mounted or received in the recess is flush with the remaining portion of the power amplifying circuit.
6. A power amplifier based on Ka frequency band waveguide coaxial conversion is characterized by comprising the box body, a power amplifier circuit, a glass insulator and a feedthrough capacitor according to any one of claims 1 to 5;
the power amplifier circuit is arranged in the mounting cavity;
the glass insulator penetrates through the first mounting hole, and one end of the glass insulator is welded with the power amplifier circuit;
the feedthrough capacitor penetrates through the second mounting hole, and one end of the feedthrough capacitor is welded with the power amplifier circuit.
7. A power amplifier based on Ka frequency band waveguide coaxial conversion is characterized by comprising the box body, a PCB, a glass insulator and a feedthrough capacitor as claimed in claim 4 or 5;
the PCB comprises a substrate and a power amplifier circuit, wherein the power amplifier circuit comprises a power amplifier chip and a chip circuit electrically connected with the power amplifier chip;
the substrate is arranged in the mounting cavity, and the chip circuit is welded on the substrate;
the substrate is provided with a hollow part matched with the groove at a position corresponding to the groove, the groove is paved with a conducting layer, and the power amplifier chip is arranged on the conducting layer and positioned in the hollow part;
the glass insulator penetrates through the first mounting hole, and one end of the glass insulator is welded with the chip circuit;
the feedthrough capacitor penetrates through the second mounting hole, and one end of the feedthrough capacitor is welded with the chip circuit.
8. The power amplifier of claim 7, wherein the chip circuit comprises an internal power supply circuit and a microstrip line, and the internal power supply circuit and the microstrip line are soldered on the substrate; the power amplifier chip is electrically connected with the internal power supply circuit through a chip capacitor, the chip capacitor is installed on the conducting layer and is positioned in the hollow part, or the chip capacitor is welded on the substrate, the power amplifier chip is respectively and electrically connected with the chip capacitor and the microstrip line through a gold wire, and the chip capacitor is welded with the internal power supply circuit through a gold wire;
one end of the glass insulator is welded with the microstrip line;
one end of the feedthrough capacitor is welded with the internal power supply circuit.
9. The power amplifier of claim 8, wherein the microstrip line is broken in the hollow portion to form a first microstrip line and a second microstrip line, and a first end of the first microstrip line and a first end of the second microstrip line are respectively welded to the power amplifier chip through gold wires;
one end of one glass insulator is welded with the second end of the first microstrip line, and one end of the other glass insulator is welded with the second end of the second microstrip line.
10. The power amplifier of claim 9, wherein the first microstrip line and/or the second microstrip line has a bending portion, so that the second end of the first microstrip line and the second end of the second microstrip line are located on the same straight line.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121304756.7U CN215184483U (en) | 2021-06-10 | 2021-06-10 | Box body and power amplifier comprising same and used for coaxial conversion of Ka frequency band waveguide |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121304756.7U CN215184483U (en) | 2021-06-10 | 2021-06-10 | Box body and power amplifier comprising same and used for coaxial conversion of Ka frequency band waveguide |
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| CN215184483U true CN215184483U (en) | 2021-12-14 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115693080A (en) * | 2023-01-03 | 2023-02-03 | 四川斯艾普电子科技有限公司 | High-power synthesizer implementation method based on thick-film circuit substrate |
-
2021
- 2021-06-10 CN CN202121304756.7U patent/CN215184483U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115693080A (en) * | 2023-01-03 | 2023-02-03 | 四川斯艾普电子科技有限公司 | High-power synthesizer implementation method based on thick-film circuit substrate |
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