CN215180991U - Planar waveguide amplifier with doped inner layer, planar waveguide, optical device and equipment - Google Patents
Planar waveguide amplifier with doped inner layer, planar waveguide, optical device and equipment Download PDFInfo
- Publication number
- CN215180991U CN215180991U CN202121031574.7U CN202121031574U CN215180991U CN 215180991 U CN215180991 U CN 215180991U CN 202121031574 U CN202121031574 U CN 202121031574U CN 215180991 U CN215180991 U CN 215180991U
- Authority
- CN
- China
- Prior art keywords
- planar waveguide
- film layer
- thin film
- rare earth
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Lasers (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The utility model relates to a planar waveguide amplifier, planar waveguide, optical device and equipment of inlayer doping, this planar waveguide amplifier include the optics substrate, and the deposit has the first thin layer of doping tombarthite on the optics substrate, and the deposit has the second thin layer of undoped tombarthite on the first thin layer, and the sculpture of second thin layer has the waveguide structure. The plasma generated by etching the etching gas of the waveguide structure directly etches the waveguide structure on the second film layer which is not doped with the rare earth, and the plasma is prevented from directly etching the rare earth ions, so that the phenomenon that the surface and the side wall of the planar waveguide amplifier have larger roughness because the doped rare earth ions cannot be etched by the plasma is avoided, the smoothness of the surface and the side wall of the planar waveguide amplifier can be ensured, the optical transmission loss is reduced, and the amplification gain performance of the planar waveguide amplifier is improved.
Description
Technical Field
The utility model relates to an optical amplifier field especially relates to a planar waveguide amplifier, planar waveguide, optical device and equipment of inlayer doping.
Background
An optical fiber amplifier is one of the indispensable core devices in an optical fiber communication network, and is capable of amplifying an optical signal transmitted in an optical fiber. An Erbium Doped Fiber Amplifier (EDFA) widely used at present has an amplification effect on optical signals of over 30dB at a wavelength of 1.5 μm, and optical signals can be transmitted over 100 km through one-time amplification. However, such fiber amplifiers are typically bulky and expensive, which is not conducive to small networks or other application requirements in particular situations.
With the development of waveguide technology, planar waveguides (or called optical planar waveguides, planar optical waveguides) gradually become a new trend of optical signal transmission, and planar waveguide amplifier schemes based on planar waveguides are also proposed. By planar optical waveguide is meant an optical waveguide that lies in a plane. The planar waveguide has various advantages, such as that the whole waveguide processing technology can be compatible with the standard semiconductor processing technology, and the planar waveguide on the chip generally has a small area of centimeter level, so that the power consumption is low, and the planar waveguide is convenient for realizing large-scale production and integration on the chip of a large-scale optical device.
The chinese patent application CN104345385A discloses a silicon-based polymer planar optical waveguide amplifier doped with rare earth neodymium complex and a method for preparing the silicon-based polymer planar optical waveguide amplifier. The silicon-based polymer planar optical waveguide amplifier comprises a silicon substrate, a lower cladding and a waveguide core layer, wherein the lower cladding is arranged on the upper surface of the silicon substrate, the waveguide core layer is arranged on the upper surface of the lower cladding, and the waveguide core layer is made of a polymer material doped with a rare earth neodymium complex. The preparation method of the silicon-based polymer planar optical waveguide amplifier comprises the following steps: step S1, preparing a polymer solution doped with a rare earth neodymium complex; step S2, growing a layer of SiO on the silicon substrate by thermal oxidation2Forming a lower cladding; step S3, coating the polymer solution doped with the rare earth neodymium complex on the lower cladding by adopting a spin-coating method, and curing to form a core layer; step S4, depositing an aluminum film on the core layer by adopting a magnetron sputtering method; step S5, a layer of ultraviolet negative photoresist is spin-coated on the aluminum film, then prebaking, ultraviolet exposure, postbaking and development are carried out, the pattern on the photoetching plate is transferred to the ultraviolet negative photoresist and the aluminum film, and an aluminum mask corresponding to the pattern of the waveguide core layer is formed; step S6, patterning the core layer by adopting an oxygen reactive ion etching method to form a waveguide core layer, and simultaneously removing the ultraviolet negative photoresist of an exposed part; in step S7, the aluminum mask is removed using a developer.
However, the method for preparing the planar optical waveguide amplifier disclosed in the above patent application CN104345385A also has some problems: because the solidified core layer is formed by a polymer material doped with a rare earth neodymium complex, when the core layer is etched by adopting an oxygen reactive ion etching method, oxygen reactive ions can directly interact with a rare earth material (namely neodymium), but because the rare earth material is difficult to be etched by the oxygen reactive ions, the roughness of the structure surface and the side wall of the planar waveguide obtained after etching is larger, larger optical transmission loss can be brought to the planar waveguide, and further serious adverse effects can be brought to the amplification gain of a waveguide device (such as a planar waveguide amplifier) manufactured by using the planar waveguide.
Therefore, how to avoid the larger roughness of the structural surface and the side wall of the planar waveguide amplifier obtained after plasma etching and keep the activity of the rare earth ions in the prepared film becomes the key for preparing the high-quality planar waveguide amplifier.
SUMMERY OF THE UTILITY MODEL
The first technical problem to be solved by the present invention is to provide an inner doped planar waveguide amplifier for the above prior art.
The second technical problem to be solved by the present invention is to provide a planar waveguide applied with the planar waveguide amplifier in view of the above prior art.
The third technical problem to be solved in the present invention is to provide an optical device using the planar waveguide amplifier according to the above prior art.
The fourth technical problem to be solved in the present invention is to provide an optical apparatus using the above optical device.
The utility model provides a technical scheme that first technical problem adopted does: the planar waveguide amplifier with doped inner layer includes optical substrate, and features the first RE doped film layer deposited on the optical substrate, the second RE undoped film layer deposited on the first film layer, and the waveguide structure etched on the second film layer.
Further, in the planar waveguide amplifier, the waveguide structure etched on the second thin film layer corresponds to the optimized waveguide structure design parameters corresponding to the optical field distribution diagram of the planar waveguide amplifier based on pre-simulation.
Preferably, the waveguide structure etched on the second thin film layer corresponds to the optimized optimal waveguide structure design parameter corresponding to the optical field distribution diagram of the planar waveguide amplifier based on pre-simulation.
Optionally, in the planar waveguide amplifier, the waveguide structure is a ridge-shaped structure.
Alternatively, in the planar waveguide amplifier, Er or Pr or Ho or Dy or Tm or other rare earth materials are adopted as the rare earth according to actual needs.
Optionally, in the planar waveguide amplifier, the optical substrate is a thermally oxidized Si substrate, the first thin film layer is a rare earth doped chalcogenide material layer, and the second thin film layer is a rare earth undoped chalcogenide material layer.
Further, in the planar waveguide amplifier, the optical substrate is a thermally oxidized Si substrate, and the first thin film layer is a rare earth Er doped TeO2A second thin film layer of rare earth-free TeO2A layer;
or the optical substrate is a thermally oxidized Si substrate, and the first thin film layer is Ta doped with rare earth Er2O5A second thin film layer of Ta not doped with rare earth2O5And (3) a layer.
Optionally, in the planar waveguide amplifier, the optical substrate is a thermally oxidized Si substrate, and the first thin film layer is rare earth Er doped Al2O3Layer, the second thin film layer is Al not doped with rare earth2O3And (3) a layer.
Preferably, in the planar waveguide amplifier, the thickness of the first thin film layer is 0.5 to 2 μm, and the thickness of the second thin film layer is 0.3 to 1 μm.
The utility model provides a technical scheme that second technical problem adopted does: planar waveguide, characterized in that any of the planar waveguide amplifiers described above is applied.
The utility model provides a technical scheme that third technical problem adopted does: an optical device, wherein any one of the planar waveguide amplifiers is applied.
Optionally, the optical device is a splitter or star coupler or a dimmable attenuator or an optical switch or a comb or an arrayed waveguide grating.
The utility model provides a technical scheme that fourth technical problem adopted does: optical device, characterized in that said optical device is applied.
Compared with the prior art, the utility model has the advantages of: compared with the traditional planar waveguide amplifier which is obtained by etching the rare earth doped film on the optical substrate, the optical substrate of the planar waveguide amplifier in the utility model is deposited with a first film layer doped with rare earth, the first film layer is deposited with a second film layer not doped with rare earth, the second film layer is etched with a waveguide structure, the plasma generated by etching the waveguide structure directly etches the waveguide structure on the second film layer not doped with rare earth, the plasma is prevented from directly etching rare earth ions, thereby avoiding the surface and the side wall of the planar waveguide amplifier from generating larger roughness because the doped rare earth ions can not be etched by plasma, therefore, smoothness of the surface and the side wall of the planar waveguide amplifier structure can be ensured, optical transmission loss is reduced, and amplification gain performance of the planar waveguide amplifier is improved. In addition, because the rare earth on the first thin film layer of the planar waveguide amplifier is not directly etched by the plasma, the activity of rare earth ions in the first thin film layer can be maintained, the overall performance of the planar waveguide amplifier is improved, the interaction between light and the rare earth-doped thin film layer is favorably enhanced while the light is transmitted in the low-loss waveguide, and the gain of the planar waveguide amplifier is improved.
Drawings
FIG. 1 is a schematic flow chart of a method for fabricating a planar waveguide amplifier with doped middle and inner layers according to the present invention;
fig. 2 is a schematic view of a simulated light field distribution at 1.5 microns in a first embodiment of the present invention;
fig. 3 is a schematic structural diagram of a planar waveguide amplifier according to a first embodiment of the present invention;
fig. 4 is a schematic diagram of an amplification gain performance testing system of a planar waveguide amplifier according to the present invention;
fig. 5 is a schematic diagram of the measurement result of the amplification performance of the planar waveguide amplifier at 1.5 μm according to the first embodiment of the present invention;
fig. 6 is a schematic structural diagram of a planar waveguide amplifier according to a second embodiment of the present invention;
fig. 7 is a schematic diagram of the measurement result of the amplification performance of the planar waveguide amplifier at 1.5 μm according to the second embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the following embodiments.
Example one
This example provides a method for preparing an inner-layer doped planar waveguide amplifier, and more particularly, to a method for preparing a rare-earth Er-doped chalcogenide planar waveguide amplifier, in which the chalcogenide material doped with rare-earth Er is TeO2. Referring to fig. 1, the preparation method of the inner-layer doped planar waveguide amplifier includes the following steps S1 to S5:
step S1, simulating a light field distribution diagram of the planar waveguide amplifier in advance, and optimizing waveguide structure design parameters based on the light field distribution diagram to obtain optimized waveguide structure design parameters; wherein the refractive index n of the Er doped material is determined1And refractive index n of the optical substrate to be used2The mode of simulating the optical field distribution at the wavelength of 1.5 μm belongs to the conventional technical means which are easily known by the technical personnel in the field, and the specific simulation process of the optical field distribution is not repeated herein; the light field distribution simulated by the embodiment is shown in fig. 2; the optimized waveguide structure design parameters obtained here are optimized optimal waveguide structure design parameters, and the optimized waveguide structure design parameters are obtained based on the optical field distribution diagram, which belong to conventional technical means in the field and are not described here any more;
step S2, depositing a first thin film layer with the thickness of 0.5-2 μm doped with rare earth Er on an optical substrate made of thermally oxidized Si by a double-target sputtering method; wherein the first film isThe film layer is TeO doped with rare earth Er2Layer, the parameters of the double-target sputtering mode are set as follows: pumping the vacuum chamber of the double-target sputtering equipment to 10-5～10-6Pa, then filling gas into the vacuum cavity to maintain the air pressure in the vacuum cavity at 0.1-10 Pa for TeO2Sputtering power of the target of the layer is 30-200W, and sputtering power of the target aiming at the rare earth Er is 20-100W; of course, the first thin film layer can be deposited by sputtering with a single target, and the parameters adopted and added for TeO2The target parameters of the layer are consistent, and the thin film layer can be prepared by a thermal evaporation method; in the sputtering formation of a chalcogenide thin film, the gas used here to be charged into the vacuum chamber is an inert gas such as nitrogen or argon, and in the sputtering formation of an oxide thin film, the gas used here to be charged into the vacuum chamber is a mixed gas of an inert gas and oxygen;
step S3, depositing a second film layer which is not doped with rare earth and has the thickness of 0.3-1 mu m above the first film layer; wherein the second film layer is TeO not doped with rare earth2A layer;
step S4, etching a corresponding waveguide structure on the second thin film layer by using the plasma generated by the etching gas according to the optimized optimal waveguide structure design parameters; wherein, the working parameters corresponding to the etching gas are as follows: the pressure of the etching cavity is 1-10 Pa, the radio frequency power is 100-1500W, and CF is selected4Or CHF3Or SF6Or Ar or O2And (3) waiting for etching gas, wherein the bias power is 30-300W. The waveguide structure in this embodiment is a ridge-shaped structure, as shown in fig. 3.
Step S5, the optical substrate, the first thin film layer, and the second thin film layer etched with the waveguide structure are encapsulated.
The embodiment also provides a planar waveguide amplifier prepared by the preparation method of the planar waveguide amplifier with doped inner layer. Referring to fig. 3, the planar waveguide amplifier of this embodiment includes an optical substrate 11, a first thin film layer 12 doped with rare-earth Er deposited on the optical substrate 11, a second thin film layer 13 not doped with rare-earth deposited on the first thin film layer 12, and the second thin film layer 13 etchedThere is a waveguide structure 14. The waveguide structure 14 etched on the second thin film layer 13 corresponds to the optimized design parameters of the waveguide structure. And the waveguide structure etched on the second thin film layer corresponds to the optimized waveguide structure design parameters corresponding to the optical field distribution diagram of the planar waveguide amplifier based on pre-simulation. The waveguide structure 14 in the embodiment adopts a ridge-shaped structure, the optical substrate 11 is a thermal oxidation Si substrate, and the first thin film layer 12 is TeO doped with rare earth Er and having a thickness of 0.5-2 μm2The second thin film layer 13 is TeO which is not doped with rare earth and has the thickness of 0.3-1 mu m2And (3) a layer.
This example measured the optical amplification performance (or referred to as gain performance) of the prepared planar waveguide amplifier (see the planar waveguide amplifier product in the state shown in fig. 3). Referring to fig. 4, in the system for testing amplification gain performance of a planar waveguide amplifier, pump light emitted by a pump light source 31 and signal light emitted by a signal light source 32 are coupled into the prepared planar waveguide amplifier 1 through a coupling device 33 via a lens fiber (lens fiber)34, and after the signal light is amplified by the planar waveguide amplifier 1, the signal light is coupled into a spectrometer 36 at the other side of the planar waveguide amplifier 1 via another lens fiber 35, so that the amplified signal light is measured. An attenuator 37 is provided between the signal light source 32 and the coupling device 33. The lens optical fiber 34 and the lens optical fiber 35 are fixed on the three-dimensional micro-displacement platform 30 for adjusting the relative position of each lens optical fiber and the planar waveguide amplifier 1 to improve the coupling efficiency. Of course, if a spatial light path is used, the light can be coupled into/out of the planar waveguide by a suitable lens instead of a lensed fiber. Fig. 5 shows the measurement results of the amplification performance at 1.5 μm for the planar waveguide amplifier obtained in this example. As can be seen from fig. 5, the amplification gain of the planar waveguide amplifier obtained in this embodiment can reach 18dB at an input power of 250 mW.
It should be noted that, in the preparation of the planar waveguide amplifier in this embodiment, the rare earth-doped material may be sulfur, if necessaryThe material can also be other materials suitable for preparing waveguide, such as Al doped with rare earth Er2O3So as to obtain the corresponding first thin film layer or second thin film layer. According to the actual requirement, Er or Pr or Ho or Dy or Tm or other rare earth materials are adopted as the rare earth. When different rare earth materials are used, the corresponding waveguide amplification wave bands correspond to different light emitting positions of the rare earth.
Compared with the traditional preparation method of the planar waveguide amplifier, the method needs to directly etch the rare earth-doped film on the optical substrate to obtain the waveguide structure, in the embodiment, the plasma generated by the etching gas directly etches the waveguide structure on the rare earth-undoped second film layer, and the plasma is prevented from directly etching the rare earth ions, so that the surface and the side wall of the prepared planar waveguide amplifier are prevented from generating larger roughness due to the fact that the doped rare earth ions cannot be etched by the plasma, smoothness of the surface and the side wall of the planar waveguide amplifier can be ensured, optical transmission loss is reduced, and the amplification gain performance of the planar waveguide amplifier is improved. In addition, because the plasma does not directly etch the rare earth ions, the activity of the rare earth ions in the prepared film can be kept, and the overall performance of the prepared planar waveguide amplifier is improved.
This embodiment provides an optical device employing a rare earth Er doped planar waveguide amplifier as described above. Of course, the rare-earth Er doped planar Waveguide amplifier can also be applied to Optical devices such as Splitter (Splitter), Star coupler (Star coupler), Variable Optical Attenuator (VOA), Optical switch (Optical switch), Optical comb (Interleaver), and Arrayed Waveguide Grating (AWG), according to actual needs.
This embodiment provides an apparatus. In particular, the apparatus is applied with any of the optical devices described above.
Example two
This example provides a method for preparing an inner layer doped planar waveguide amplifier, specifically, Ta doped with rare earth Er2O5Plane surfaceA method for manufacturing a waveguide amplifier. Referring to fig. 1, the preparation method of the inner-layer doped planar waveguide amplifier includes the following steps S1 to S5:
step S1, simulating a light field distribution diagram of the planar waveguide amplifier in advance, and optimizing waveguide structure design parameters based on the light field distribution diagram to obtain optimized waveguide structure design parameters; wherein the refractive index n of the Er doped material is determined1And refractive index n of the optical substrate to be used2The mode of simulating the optical field distribution at the wavelength of 1.5 μm belongs to the conventional technical means which are easily known by the technical personnel in the field, and the specific simulation process of the optical field distribution is not repeated herein; the optimized waveguide structure design parameters obtained here are optimized optimal waveguide structure design parameters, and the optimized waveguide structure design parameters are obtained based on the optical field distribution diagram, which belong to conventional technical means in the field and are not described here any more;
step S2, depositing a first thin film layer with the thickness of 0.5-2 μm doped with rare earth Er on an optical substrate made of thermally oxidized Si by a double-target sputtering method; wherein the first film layer is Ta doped with rare earth Er2O5Layer, the parameters of the double-target sputtering mode are set as follows: pumping the vacuum chamber of the double-target sputtering equipment to 10-5～10-6Pa, then filling gas into the vacuum cavity to maintain the air pressure in the vacuum cavity at 0.1-10 Pa for Ta2O5Sputtering power of the target of the layer is 30-200W, and sputtering power of the target aiming at the rare earth Er is 20-100W; of course, the first thin film layer can be deposited by sputtering with a single target, using the parameters and the additive to Ta2O5The target parameters of the layer are consistent, and the thin film layer can be prepared by a thermal evaporation method; in the sputtering formation of a chalcogenide thin film, the gas used here to be charged into the vacuum chamber is an inert gas such as nitrogen or argon, and in the sputtering formation of an oxide thin film, the gas used here to be charged into the vacuum chamber is a mixed gas of an inert gas and oxygen;
step S3, depositing a second film layer which is not doped with rare earth and has the thickness of 0.3-1 mu m above the first film layer; wherein the second film layer is Ta without doping rare earth2O5A layer;
step S4, etching a corresponding waveguide structure on the second thin film layer by using the plasma generated by the etching gas according to the optimized optimal waveguide structure design parameters; wherein, the working parameters corresponding to the etching gas are as follows: the pressure of the etching cavity is 1-10 Pa, the radio frequency power is 100-1500W, and CF is selected4Or CHF3Or SF6Or Ar or O2And (3) waiting for etching gas, wherein the bias power is 30-300W. The waveguide structure in this embodiment is a ridge-shaped structure, which can be specifically seen in fig. 6;
step S5, the optical substrate, the first thin film layer, and the second thin film layer etched with the waveguide structure are encapsulated.
The embodiment also provides a planar waveguide amplifier prepared by the preparation method of the planar waveguide amplifier with doped inner layer. Referring to fig. 6, the planar waveguide amplifier of the embodiment comprises an optical substrate 11, a first thin film layer 12 doped with rare earth Er is deposited on the optical substrate 11, a second thin film layer 13 not doped with rare earth is deposited on the first thin film layer 12, and a waveguide structure 14 is etched on the second thin film layer 13. The waveguide structure 14 etched on the second thin film layer 13 corresponds to the optimized design parameters of the waveguide structure. And the waveguide structure etched on the second thin film layer corresponds to the optimized waveguide structure design parameters corresponding to the optical field distribution diagram of the planar waveguide amplifier based on pre-simulation. The waveguide structure 14 in the embodiment adopts a ridge-shaped structure, the optical substrate 11 is a thermal oxidation Si substrate, and the first thin film layer 12 is Ta doped with rare earth Er and having a thickness of 0.5-2 μm2O5The second thin film layer 13 is Ta undoped with rare earth and having a thickness of 0.3-1 μm2O5And (3) a layer.
This example measured the optical amplification performance (or referred to as gain performance) of the prepared planar waveguide amplifier (see the planar waveguide amplifier product in the state shown in fig. 6). Referring to fig. 4, in the amplification gain performance test system of the planar waveguide amplifier, the pump light emitted by the pump light source 31 and the signal light emitted by the signal light source 32 are coupled into the prepared planar waveguide amplifier 1 through the coupling device 33 via the lens fiber 34, and after the signal light is amplified by the planar waveguide amplifier 1, the signal light is coupled into the spectrometer 36 at the other side of the planar waveguide amplifier 1 via the other lens fiber 35, so that the amplified signal light is measured. An attenuator 37 is provided between the signal light source 32 and the coupling device 33. The lens optical fiber 34 and the lens optical fiber 35 are fixed on the three-dimensional micro-displacement platform 30 for adjusting the relative position of each lens optical fiber and the planar waveguide amplifier 1 to improve the coupling efficiency. Of course, if a spatial light path is used, the light can be coupled into/out of the planar waveguide by a suitable lens instead of a lensed fiber. Fig. 7 shows the measurement results of the amplification performance at 1.5 μm for the planar waveguide amplifier obtained in this example. As can be seen from fig. 7, the amplification gain of the planar waveguide amplifier obtained in this embodiment can reach 23dB at an input power of 250 mW.
It should be noted that, when the planar waveguide amplifier in this embodiment is manufactured, the material doped with the rare earth may be a chalcogenide material, or may be other materials suitable for manufacturing a waveguide, such as Al doped with rare earth Er2O3So as to obtain the corresponding first thin film layer or second thin film layer. According to the actual requirement, Er or Pr or Ho or Dy or Tm or other rare earth materials are adopted as the rare earth. When different rare earth materials are used, the corresponding waveguide amplification wave bands correspond to different light emitting positions of the rare earth.
Compared with the traditional preparation method of the planar waveguide amplifier, the method needs to directly etch the rare earth-doped film on the optical substrate to obtain the waveguide structure, in the embodiment, the plasma generated by the etching gas directly etches the waveguide structure on the rare earth-undoped second film layer, and the plasma is prevented from directly etching the rare earth ions, so that the surface and the side wall of the prepared planar waveguide amplifier are prevented from generating larger roughness due to the fact that the doped rare earth ions cannot be etched by the plasma, smoothness of the surface and the side wall of the planar waveguide amplifier can be ensured, optical transmission loss is reduced, and the amplification gain performance of the planar waveguide amplifier is improved. In addition, because the plasma does not directly etch the rare earth ions, the activity of the rare earth ions in the prepared film can be kept, and the overall performance of the prepared planar waveguide amplifier is improved.
This embodiment provides an optical device employing a rare earth Er doped planar waveguide amplifier as described above. Of course, the rare-earth Er doped planar Waveguide amplifier can also be applied to Optical devices such as Splitter (Splitter), Star coupler (Star coupler), Variable Optical Attenuator (VOA), Optical switch (Optical switch), Optical comb (Interleaver), and Arrayed Waveguide Grating (AWG), according to actual needs.
This embodiment provides an apparatus. In particular, the apparatus is applied with any of the optical devices described above.
Although the preferred embodiments of the present invention have been described in detail hereinabove, it should be clearly understood that modifications and variations of the present invention are possible to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The planar waveguide amplifier with the doped inner layer comprises an optical substrate (11), and is characterized in that a first thin film layer (12) doped with rare earth is deposited on the optical substrate (11), a second thin film layer (13) not doped with rare earth is deposited on the first thin film layer (12), and a waveguide structure (14) is etched on the second thin film layer (13).
2. The planar waveguide amplifier according to claim 1, wherein the waveguide structure (14) etched on the second thin film layer (13) corresponds to the optimized waveguide structure design parameters; the optimized waveguide structure design parameters are obtained by performing optimization design processing according to a light field distribution diagram of a planar waveguide amplifier which is simulated in advance.
3. The planar waveguide amplifier according to claim 2, wherein the waveguide structure (14) etched on the second thin film layer (13) corresponds to the optimized optimal waveguide structure design parameters corresponding to the optical field profile of the planar waveguide amplifier based on the pre-simulation.
4. A planar waveguide amplifier according to any one of claims 1 to 3, characterised in that the waveguide structure (14) is a ridge-like structure.
5. The planar waveguide amplifier according to any of claims 1 to 3, wherein the optical substrate (11) is a thermally oxidized Si substrate, the first thin film layer (12) is a rare earth doped chalcogenide material layer, and the second thin film layer (13) is a rare earth undoped chalcogenide material layer;
or the optical substrate (11) is a thermal-oxidized Si substrate, and the first thin film layer (12) is Al doped with rare earth Er2O3Layer, the second thin film layer (13) being Al not doped with rare earth2O3And (3) a layer.
6. The planar waveguide amplifier according to any one of claims 1 to 3, wherein the thickness of the first thin film layer (12) is 0.5 to 2 μm, and the thickness of the second thin film layer (13) is 0.3 to 1 μm.
7. A planar waveguide amplifier according to any one of claims 1 to 6, wherein the planar waveguide amplifier is used.
8. An optical device, wherein the planar waveguide amplifier according to any one of claims 1 to 6 is applied.
9. An optical device as claimed in claim 8, characterized in that the optical device is a splitter or a star coupler or a dimmable attenuator or an optical switch or a comb or an arrayed waveguide grating.
10. Optical device, characterized in that an optical device according to claim 8 or 9 is applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121031574.7U CN215180991U (en) | 2021-05-14 | 2021-05-14 | Planar waveguide amplifier with doped inner layer, planar waveguide, optical device and equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121031574.7U CN215180991U (en) | 2021-05-14 | 2021-05-14 | Planar waveguide amplifier with doped inner layer, planar waveguide, optical device and equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215180991U true CN215180991U (en) | 2021-12-14 |
Family
ID=79369781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121031574.7U Active CN215180991U (en) | 2021-05-14 | 2021-05-14 | Planar waveguide amplifier with doped inner layer, planar waveguide, optical device and equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215180991U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115308847A (en) * | 2022-07-11 | 2022-11-08 | 宁波大学 | Dual-mode interference 2X 2 optical waveguide switch based on phase change material |
| CN115343799A (en) * | 2021-05-14 | 2022-11-15 | 宁波大学 | Preparation method of planar waveguide amplifier with doped inner layer and planar waveguide amplifier |
-
2021
- 2021-05-14 CN CN202121031574.7U patent/CN215180991U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115343799A (en) * | 2021-05-14 | 2022-11-15 | 宁波大学 | Preparation method of planar waveguide amplifier with doped inner layer and planar waveguide amplifier |
| CN115308847A (en) * | 2022-07-11 | 2022-11-08 | 宁波大学 | Dual-mode interference 2X 2 optical waveguide switch based on phase change material |
| CN115308847B (en) * | 2022-07-11 | 2023-10-24 | 宁波大学 | Dual-mode interference 2X 2 optical waveguide switch based on phase change material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN215180991U (en) | Planar waveguide amplifier with doped inner layer, planar waveguide, optical device and equipment | |
| KR100450935B1 (en) | Method for fabricating tapered waveguide | |
| JP2679904B2 (en) | Manufacturing method of product comprising optical gain device | |
| CN111965761B (en) | Grating coupler based on lithium niobate thin film material and manufacturing method thereof | |
| CN113296292B (en) | Organic-inorganic hybrid integrated polymer variable optical attenuator and preparation method thereof | |
| US20040114899A1 (en) | Planar, integrated, optical, air-clad waveguide and method of producing same | |
| CN111129920B (en) | Preparation method of distributed Bragg reflection laser based on erbium-doped lithium niobate thin film | |
| CN215067406U (en) | Outer layer doped planar waveguide amplifier, planar waveguide, optical device and equipment | |
| US20030156794A1 (en) | Tapered waveguide interconnection structure and method of fabricating the same | |
| CN110221384B (en) | Silicon-based metamaterial multimode curved waveguide and preparation method thereof | |
| CN115343799A (en) | Preparation method of planar waveguide amplifier with doped inner layer and planar waveguide amplifier | |
| Sun et al. | Design and fabrication of all-polymer thermo-optic variable optical attenuator with low power consumption | |
| Schermer et al. | Investigation of Mesa Dielectric Waveguides | |
| Li et al. | Er-doped glass ridge-waveguide amplifiers fabricated with a collimated sputter deposition technique | |
| CN104345385A (en) | Silicon-based polymer planar optical waveguide amplifier doped with rare earth neodymium complex | |
| CN115343800A (en) | Preparation method of planar waveguide amplifier with doped outer layer and planar waveguide amplifier | |
| CN215067652U (en) | Channel-type planar waveguide amplifier, optical device, and optical apparatus | |
| US20220231473A1 (en) | Manufacturing Method of a Channel Type Planar Waveguide Amplifier and a Channel Type Planar Waveguide Amplifier Thereof | |
| KR100440763B1 (en) | Optical waveguide-type filter device for flattening gain and method for manufacturing the same | |
| EP1030413B1 (en) | Planar optical waveguide amplifier and method of making same | |
| CN220272955U (en) | Optical fiber amplification system based on multichannel erbium-doped waveguide array | |
| JPH07318734A (en) | Quartz glass waveguide and its production | |
| KR100328132B1 (en) | Planar optical amplifier and its fabrication method | |
| WO2022180730A1 (en) | Optical waveguide | |
| KR100395500B1 (en) | Method for fabricating planar waveguide type optical amplifier using glass sputtering |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |