CN215163122U - Film coating device - Google Patents
Film coating device Download PDFInfo
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- CN215163122U CN215163122U CN202120721734.4U CN202120721734U CN215163122U CN 215163122 U CN215163122 U CN 215163122U CN 202120721734 U CN202120721734 U CN 202120721734U CN 215163122 U CN215163122 U CN 215163122U
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Abstract
The utility model discloses a film coating device. The coating device is used for coating a substrate in PECVD and comprises: a radio frequency power supply for providing a radio frequency signal; the isolation module is connected with the radio frequency power supply and used for isolating direct current components in a loop; the radio frequency power supply comprises a vacuum cavity, wherein a first electrode plate and a second electrode plate are arranged in the vacuum cavity, one end of the first electrode plate is electrically connected with a first end of the radio frequency power supply, and one end of the second electrode plate is electrically connected with a second end of the radio frequency power supply; the first electrode plate and the second electrode plate are used for placing the base material; the isolation module is further configured to isolate the first electrode plate from a ground terminal, and to isolate the second electrode plate from the ground terminal. The embodiment of the application can place the base material on the first electrode plate and the second electrode plate, and ensures the film forming uniformity of the base material, thereby improving the slide glass amount of the film coating device.
Description
Technical Field
The utility model relates to a coating film technical field especially relates to a coating device.
Background
PECVD (Plasma Enhanced Chemical Vapor Deposition), a coating process. Which ionizes a gas containing atoms of a film component by means of radio frequency or the like to locally form a plasma, thereby depositing a desired film on a substrate.
In the related art, when the frequency of the process power supply rises to a certain value, the substrate of the tubular PECVD can only be placed at the grounding end or the radio frequency output end of the radio frequency power supply, which affects the film coating efficiency of the substrate and the carrying quantity of the film coating device.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that exists among the prior art at least. Therefore, the utility model provides a coating device can all place the substrate at first plate electrode and second plate electrode to guarantee the film forming uniformity of substrate, thereby improve coating device's slide glass volume.
According to the utility model discloses a coating device of first aspect embodiment for carry out the coating film to the substrate in the PECVD, include: a radio frequency power supply for providing a radio frequency signal; the isolation module is connected with the radio frequency power supply and used for isolating direct current components in a loop; the radio frequency power supply comprises a vacuum cavity, wherein a first electrode plate and a second electrode plate are arranged in the vacuum cavity, one end of the first electrode plate is electrically connected with a first end of the radio frequency power supply, and one end of the second electrode plate is electrically connected with a second end of the radio frequency power supply; the first electrode plate and the second electrode plate are used for placing the base material; the isolation module is further configured to isolate the first electrode plate from a ground terminal, and to isolate the second electrode plate from the ground terminal.
According to the utility model discloses coating device has following beneficial effect at least: the isolation module is used for isolating direct current components in the radio frequency signals, so that the first electrode plate and the second electrode plate can receive equivalent plasma in the same time. Therefore, under the condition of ensuring the film forming uniformity of the base material, the base material can be placed on both the first electrode plate and the second electrode plate, so that the carrying quantity of the vacuum cavity and the film coating efficiency of the base material are improved.
According to some embodiments of the invention, the isolation module comprises: the impedance matching module is connected with the radio frequency power supply; the impedance matching module comprises a first capacitor and a second capacitor, and the first capacitor is electrically connected with the first electrode plate; the second capacitor is electrically connected with the second electrode plate.
According to some embodiments of the invention, the isolation module comprises: the impedance matching module is connected with the radio frequency power supply; the impedance matching module comprises a third capacitor, and the third capacitor is electrically connected with the first electrode plate; one end of the fourth capacitor is electrically connected with the impedance matching module, and the other end of the fourth capacitor is electrically connected with the second electrode plate.
According to some embodiments of the invention, the isolation module comprises: the impedance matching module is connected with the radio frequency power supply; one end of the fifth capacitor is electrically connected with the impedance matching module, and the other end of the fifth capacitor is electrically connected with the first electrode plate; the impedance matching module comprises a sixth capacitor, and the sixth capacitor is electrically connected with the second electrode plate.
According to some embodiments of the invention, the isolation module comprises: the impedance matching module is connected with the radio frequency power supply; one end of the seventh capacitor is electrically connected with the impedance matching module, and the other end of the seventh capacitor is electrically connected with the first electrode plate; and one end of the eighth capacitor is electrically connected with the impedance matching module, and the other end of the eighth capacitor is electrically connected with the second electrode plate.
According to some embodiments of the present invention, at least two first electrode plates are disposed in the vacuum chamber, and one end of each first electrode plate is electrically connected to the first end of the rf power supply; one end of each second electrode plate is connected with the second end of the radio frequency power supply; and each first electrode plate and each second electrode plate are alternately arranged.
According to the utility model discloses a some embodiments, each first electrode board and each the equal level of second electrode board place in the vacuum cavity, at least one first electrode board and at least one the upper surface of second electrode board is used for placing the substrate.
According to some embodiments of the present invention, each first electrode plate and each second electrode plate is vertically placed in the vacuum cavity, at least one first surface and/or second surface of the first electrode plate is used for placing the substrate, at least one third surface and/or fourth surface of the second electrode plate is used for placing the substrate.
According to some embodiments of the present invention, each of the first electrode plates is adjacent to two of the second electrode plates, and the distance between the first electrode plates and the second electrode plates is equal to each other, or the difference between the distances is less than 100 mm.
According to some embodiments of the invention, the radio frequency signal is a symmetric signal or an asymmetric signal.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The invention will be further described with reference to the following drawings and examples, in which:
FIG. 1 is a block diagram of a coating apparatus according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a first electrode plate and a second electrode plate according to an embodiment of the present invention;
fig. 3 is another schematic structural diagram of the first electrode plate and the second electrode plate according to the embodiment of the present invention;
FIG. 4 is a schematic diagram of a circuit structure of a coating apparatus according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of another circuit structure of a coating apparatus according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of another circuit structure of a coating apparatus according to an embodiment of the present invention;
fig. 7 is a schematic diagram of another circuit structure of a coating device according to an embodiment of the present invention.
Reference numerals:
the radio frequency power supply 100, the isolation module 200, the impedance matching module 210 and the vacuum chamber 300.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention.
In the description of the present invention, it should be understood that the orientation or positional relationship indicated with respect to the orientation description, such as up, down, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, a plurality of means is one or more, a plurality of means is two or more, and the terms greater than, less than, exceeding, etc. are understood as not including the number, and the terms greater than, less than, within, etc. are understood as including the number. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless there is an explicit limitation, the words such as setting, installation, connection, etc. should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above words in combination with the specific contents of the technical solution.
In the description of the present invention, reference to the description of the terms "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
It should be noted that the first terminal of the rf power source represents an rf output terminal, and the second terminal represents a ground terminal or another rf output terminal. When the second terminal represents a ground terminal, the second electrode plate may be directly connected to the ground terminal, or may be indirectly connected to the ground terminal through another component. In the following embodiments, the second electrode plate is directly connected to the ground terminal for specific description.
Referring to fig. 1 to 3, embodiments of the present application provide a coating apparatus for coating a substrate in PECVD. The coating device comprises: an rf power source 100, an isolation module 200, and a vacuum chamber 300. The radio frequency power supply 100 is used for providing a radio frequency signal; the isolation module 200 is connected to the rf power supply 100 for isolating dc components in the loop; a first electrode plate 301 and a second electrode plate 302 are disposed in the vacuum chamber 300, wherein one end of the first electrode plate 301 is electrically connected to the first end of the rf power supply 100, and one end of the second electrode plate 302 is electrically connected to the second end of the rf power supply 100. The first electrode plate 301 and the second electrode plate 302 are used for placing a base material 303; the isolation module 200 is also used to isolate the first electrode plate 301 from the ground, and to isolate the second electrode plate 302 from the ground. It is understood that the coating apparatus provided in the embodiments of the present application can be applied to tubular PEVCD, plate PECVD, and other forms of PECVD. In the following examples, tubular PECVD is used as an example for specific description. The cross-sectional shape of the tubular PECVD vacuum chamber 300 includes, but is not limited to, circular, square, rectangular, polygonal, etc.
Tubular PECVD is a method of coating a substrate 303 using a direct method. Specifically, a quartz tube is used as a heating device such as the vacuum chamber 300, a resistance furnace, or the like as a heating body, and the substrate 303 is placed on a graphite boat so that the substrate 303 or a support of the substrate 303 serves as a part of the electrode plate. When the electrode plate is electrified, the plasma released in the vacuum cavity 300 directly contacts and reacts with the substrate 303 to generate a film, so that the film coating operation on the substrate 303 is realized. For example, the coating device is used in the fabrication of intrinsic amorphous silicon thin films and doped amorphous silicon thin films of HJT solar cells. In this embodiment and the following embodiments, the structure of the graphite boat can refer to the structure of the first electrode plate 301 and the second electrode plate 302 in the vacuum chamber 300.
The material of the substrate 303 is silicon, the first electrode plate 301 and the second electrode plate 302 are both placed in the vacuum chamber 300, the substrate 303 is held on the first electrode plate 301 and the second electrode plate 302, and the substrate 303 is coated by plasma generated in the vacuum chamber 300 through radio frequency signals. The isolation module 200 is connected to the rf power supply 100, and the isolation module 200 is configured to isolate a dc component in a transmission loop of the rf signal transmitted to the vacuum chamber, and make the first electrode plate 301 and the second electrode plate 302 not directly connected to a ground terminal, thereby reducing a bias voltage or an asymmetric electric field generated in a process of exciting a plasma by the rf signal. Since the isolation signal generated after the rf signal passes through the isolation module 200 has symmetry, the substrates 303 disposed on the first electrode plate 301 and the second electrode plate 302 can receive the same amount of plasma at the same time. It is understood that the material of the substrate 303 can be adjusted according to actual requirements.
The coating device provided by the embodiment of the application isolates the direct current component in the radio frequency signal through the isolation module 200, so that the first electrode plate 301 and the second electrode plate 302 can receive equivalent plasma in the same time. Therefore, under the condition of ensuring the film forming uniformity of the substrate 303, the substrate 303 can be placed on both the first electrode plate 301 and the second electrode plate 302, so that the carrying amount of the vacuum chamber 300 and the film coating efficiency of the substrate 303 are improved.
Referring to fig. 2 and 3, in some embodiments, at least two first electrode plates 301 and at least two second electrode plates 302 are disposed within the vacuum chamber 300. One end of each first electrode plate 301 is electrically connected with the first end of the radio frequency power supply 100; one end of each second electrode plate 302 is connected to the second end of the rf power supply 100. Specifically, at least four electrode plates are placed in the vacuum chamber 300, a first electrode plate 301 is connected to the rf output terminal (first end), a second electrode plate 302 is connected to the ground terminal (second end), and the first electrode plate 301 and the second electrode plate 302 are alternately disposed.
In some embodiments, each of the first electrode plates 301 and each of the second electrode plates 302 are horizontally disposed in the vacuum chamber 300, and the upper surfaces of at least one of the first electrode plates 301 and the second electrode plates 302 are used for disposing the substrate 303. Specifically, referring to fig. 2, one first electrode plate 301 and an adjacently disposed second electrode plate 302 are set as one electrode plate group with reference to the ground. When the electrode plate group is horizontally disposed in the vacuum chamber 300, the substrate 303 is disposed on the upper surface of the first electrode plate 301 or the upper surface of the second electrode plate 302 of the electrode plate group in which the RF field exists, under the influence of gravity.
In some embodiments, each first electrode plate 301 and each second electrode plate 302 are vertically disposed in the vacuum chamber 300, the first surface and/or the second surface of at least one first electrode plate 301 is used for disposing the substrate 303, and the third surface and/or the fourth surface of at least one second electrode is used for disposing the substrate 303. Specifically, with reference to the ground, the first surface and the second surface represent two surfaces of the first electrode plate 301 disposed perpendicularly to the ground and oppositely, and the third surface and the fourth surface represent two surfaces of the second electrode plate 302 disposed perpendicularly to the ground and oppositely. For example, in the structure shown in fig. 3, the first surface represents a left side surface of the first electrode plate 301, the second surface represents a right side surface of the first electrode plate 301, the third surface represents a left side surface of the second electrode plate 302, and the fourth surface represents a right side surface of the second electrode plate 302. One first electrode plate 301 and the second electrode plate 302 adjacently disposed are used as a group of electrode plate groups, and when the electrode plate groups are vertically disposed in the vacuum chamber 300, the substrate 303 is disposed on the left surface of the first electrode plate 301 and the right surface of the second electrode plate 302 of the electrode plate group where the RF field exists, or disposed on the right surface of the first electrode plate 301 and the left surface of the second electrode plate 302 of the electrode plate group where the RF field exists.
In some embodiments, each first electrode plate 301 is disposed at an equal distance from two second electrode plates 302 adjacently disposed, or the distance difference is less than 100mm, so that the film formation of the substrate 303 is uniform. It is understood that one or more rf power sources 100 may be included, and the number of the first electrode plate 301 and the second electrode plate 302 may be adjusted according to the actual situation.
Referring to fig. 4, in some embodiments, the isolation module 200 includes: the impedance matching module 210, the impedance matching module 210 is connected with the radio frequency power supply 100. The impedance matching module 210 includes a first capacitor C1 and a second capacitor C2, and the first capacitor C1 is electrically connected to the first electrode plate. The second capacitor C2 is electrically connected to the second electrode plate. Specifically, the first capacitor C1 and the second capacitor C2 are internal components of the impedance matching module 210, and one end of the first capacitor C1 and one end of the second capacitor C2 are electrically connected to two ends of the rf power supply 100, respectively, or are electrically connected to two ends of the rf power supply 100 through other components. The other end of the first capacitor C1 and the other end of the second capacitor C2 are electrically connected with the first electrode plate and the second electrode plate respectively. The isolation module 200 isolates the direct current component in the radio frequency signal by using the capacitance characteristic, thereby reducing the bias voltage or the asymmetric electric field generated in the process of exciting the plasma to form the radio frequency signal, and further realizing that the base material can be placed on both the first electrode plate and the second electrode plate.
Referring to fig. 5, in some embodiments, the isolation module 200 includes: an impedance matching block 210 and a fourth capacitor C4. Wherein the impedance matching module 210 comprises a third capacitance C3. The impedance matching module 210 is connected to the rf power source 100, and the third capacitor C3 is electrically connected to the first electrode plate. One end of the fourth capacitor C4 is electrically connected to the impedance matching module 210, and the other end of the fourth capacitor C4 is electrically connected to the second electrode plate. Specifically, the third capacitor C3 is an internal component of the impedance matching module 210, and the fourth capacitor C4 is an external component of the impedance matching module 210. One end of the third capacitor C3 is electrically connected to the rf power source 100 directly or through other components. Through connecting capacitors (a third capacitor C3 and a fourth capacitor C4) in series at two ends of the first electrode plate and the second electrode plate respectively, bias voltage or asymmetric electric field generated by radio frequency signals in the process of exciting plasma to form is reduced, and therefore the fact that base materials are placed on the first electrode plate and the second electrode plate is achieved.
Referring to fig. 6, in some embodiments, the isolation module 200 includes: an impedance matching block 210 and a fifth capacitance C5, wherein the impedance matching block 210 includes a sixth capacitance C6. The impedance matching module 210 is connected with the radio frequency power supply 100; one end of the fifth capacitor C5 is electrically connected to the impedance matching module 210, and the other end of the fifth capacitor C5 is electrically connected to the first electrode plate; the sixth capacitor C6 is electrically connected to the second electrode plate. Specifically, the fifth capacitor C5 is an external component of the impedance matching module 210, and the sixth capacitor C6 is an external component of the impedance matching module 210. One end of the sixth capacitor C6 is electrically connected to the rf power supply 100 directly or through other components. Through the fact that the capacitors (the fifth capacitor C5 and the sixth capacitor C6) are respectively connected in series with the two ends of the first electrode plate and the second electrode plate, bias voltage or asymmetric electric field generated in the process of exciting plasma by radio frequency signals is reduced, and therefore the fact that base materials are placed on the first electrode plate and the second electrode plate is achieved.
Referring to fig. 7, in some embodiments, the isolation module 200 includes: an impedance matching block 210, a seventh capacitance C7, and an eighth capacitance C8. The impedance matching module 210 is connected with the radio frequency power supply 100; one end of the seventh capacitor C7 is electrically connected to the impedance matching module 210, and the other end of the seventh capacitor C7 is electrically connected to the first electrode plate; one end of the eighth capacitor C8 is electrically connected to the impedance matching module 210, and the other end of the eighth capacitor C8 is electrically connected to the second electrode plate. Specifically, the seventh capacitor C7 and the eighth capacitor C8 are external capacitors of the impedance matching module 210, and the seventh capacitor C7 and the eighth capacitor C8 are respectively connected to the impedance matching module 210 and are respectively electrically connected to the first electrode plate and the second electrode plate, so as to reduce a bias voltage or an asymmetric electric field generated by the radio frequency signal in the process of exciting the plasma to form, thereby realizing that the substrate is placed on both the first electrode plate and the second electrode plate.
In the above embodiments, the impedance matching module 210 is configured to enable an internal impedance of the rf power supply 100 to be equal to a characteristic impedance of the transmission line and have the same phase, or enable the characteristic impedance of the transmission line to be equal to a load impedance of the electrode plate (the first electrode plate and/or the second electrode plate) and have the same phase. It can be understood that the components included in the impedance matching module 210 and the connection relationship between the components may be adaptively set according to actual needs, and the embodiment of the present application is not particularly limited.
In some embodiments, the rf signal provided by the rf power supply 100 may be a symmetric signal or an asymmetric signal including a bias voltage in a certain direction. Therefore, the capacitance selection in the isolation module 200 can be adjusted according to the bias condition of the rf signal to adjust the isolated dc component.
The coating device that this application example provided suspends the plate electrode that is connected with the earthing terminal in the correlation technique through the electric capacity in the isolation module, and the plate electrode is not direct to be connected with the earthing terminal promptly to reduced the bias voltage or the asymmetric electric field that radio frequency signal produced at the in-process that arouses plasma to form, realized all can placing the substrate on first plate electrode and second plate electrode, improved vacuum chamber's slide glass volume to and the coating efficiency of substrate.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present invention within the knowledge of those skilled in the art. Furthermore, the embodiments of the present invention and features of the embodiments may be combined with each other without conflict.
Claims (10)
1. The coating device is used for coating a base material in PECVD and is characterized by comprising:
a radio frequency power supply for providing a radio frequency signal;
the isolation module is connected with the radio frequency power supply and used for isolating direct current components in a loop;
the radio frequency power supply comprises a vacuum cavity, wherein a first electrode plate and a second electrode plate are arranged in the vacuum cavity, one end of the first electrode plate is electrically connected with a first end of the radio frequency power supply, and one end of the second electrode plate is electrically connected with a second end of the radio frequency power supply;
the first electrode plate and the second electrode plate are used for placing the base material; the isolation module is further configured to isolate the first electrode plate from a ground terminal, and to isolate the second electrode plate from the ground terminal.
2. The plating device according to claim 1, wherein the isolation module comprises:
the impedance matching module is connected with the radio frequency power supply;
the impedance matching module comprises a first capacitor and a second capacitor, and the first capacitor is electrically connected with the first electrode plate; the second capacitor is electrically connected with the second electrode plate.
3. The plating device according to claim 1, wherein the isolation module comprises:
the impedance matching module is connected with the radio frequency power supply; the impedance matching module comprises a third capacitor, and the third capacitor is electrically connected with the first electrode plate;
one end of the fourth capacitor is electrically connected with the impedance matching module, and the other end of the fourth capacitor is electrically connected with the second electrode plate.
4. The plating device according to claim 1, wherein the isolation module comprises:
the impedance matching module is connected with the radio frequency power supply;
one end of the fifth capacitor is electrically connected with the impedance matching module, and the other end of the fifth capacitor is electrically connected with the first electrode plate;
the impedance matching module comprises a sixth capacitor, and the sixth capacitor is electrically connected with the second electrode plate.
5. The plating device according to claim 1, wherein the isolation module comprises:
the impedance matching module is connected with the radio frequency power supply;
one end of the seventh capacitor is electrically connected with the impedance matching module, and the other end of the seventh capacitor is electrically connected with the first electrode plate;
and one end of the eighth capacitor is electrically connected with the impedance matching module, and the other end of the eighth capacitor is electrically connected with the second electrode plate.
6. The plating device according to any one of claims 1 to 5, wherein at least two first electrode plates are arranged in the vacuum chamber, and one end of each first electrode plate is electrically connected with the first end of the radio frequency power supply;
one end of each second electrode plate is connected with the second end of the radio frequency power supply;
and each first electrode plate and each second electrode plate are alternately arranged.
7. The plating device according to claim 6, wherein each of the first electrode plates and each of the second electrode plates are horizontally disposed in the vacuum chamber, and an upper surface of at least one of the first electrode plates and the second electrode plates is used for placing the substrate.
8. The plating device according to claim 6, wherein each of the first electrode plates and each of the second electrode plates are vertically disposed in the vacuum chamber, the first surface and/or the second surface of at least one of the first electrode plates is used for disposing the substrate, and the third surface and/or the fourth surface of at least one of the second electrode plates is used for disposing the substrate.
9. The plating device according to claim 7 or 8, wherein each of the first electrode plates is spaced from two of the second electrode plates disposed adjacent thereto by an equal distance or by a distance less than 100 mm.
10. The plating device according to claim 9, wherein the radio frequency signal is a symmetric signal or an asymmetric signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120721734.4U CN215163122U (en) | 2021-04-09 | 2021-04-09 | Film coating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120721734.4U CN215163122U (en) | 2021-04-09 | 2021-04-09 | Film coating device |
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| Publication Number | Publication Date |
|---|---|
| CN215163122U true CN215163122U (en) | 2021-12-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202120721734.4U Active CN215163122U (en) | 2021-04-09 | 2021-04-09 | Film coating device |
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| CN (1) | CN215163122U (en) |
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- 2021-04-09 CN CN202120721734.4U patent/CN215163122U/en active Active
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