CN215118942U - Hall current sensor packaging structure - Google Patents
Hall current sensor packaging structure Download PDFInfo
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- CN215118942U CN215118942U CN202121112725.1U CN202121112725U CN215118942U CN 215118942 U CN215118942 U CN 215118942U CN 202121112725 U CN202121112725 U CN 202121112725U CN 215118942 U CN215118942 U CN 215118942U
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 34
- 238000001514 detection method Methods 0.000 claims abstract description 24
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 239000000696 magnetic material Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910000976 Electrical steel Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 230000008859 change Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 1
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Abstract
The utility model provides a hall current sensor packaging structure. The hall current sensor packaging structure includes: a core piece having a C-notch; the detection chip is arranged at the C-shaped notch of the magnetic core piece; and the lead frame penetrates through the C-shaped notch of the magnetic core piece, is attached to the detection chip and serves as a primary side wire of the Hall current sensor. The size of the packaging structure of the Hall current sensor is reduced by eliminating a limit groove buckle, arranging a magnetic core piece in the packaging structure, using a lead frame as a primary side current lead, changing the magnetic core piece and the like, assembling steps are reduced, and the production efficiency and the product quality are improved.
Description
Technical Field
The utility model relates to a sensor technical field especially relates to a hall current sensor packaging structure.
Background
As shown in fig. 1, the hall current sensor module generally includes a plastic housing 601, a magnetic core (not shown), a metal pin 301, a retaining groove latch 701, 702, and 703, and a hall sensing chip (not shown).
The Hall current sensor module is 16.21mm long and 10mm wide as shown in figure 1, and figure 2 is a side view of the Hall current sensor module shown in figure 1, which is shown as a plastic shell 601, a metal pin 301 and a limiting groove buckle 703, wherein the height of the Hall current sensor module is 9.3mm, and the leading-out pin of the Hall chip depends on the position of the limiting groove buckle on the plastic shell to fix the thin pin, so that the production efficiency is low during assembly and the consistency of the product is poor, especially when continuous mechanical vibration is encountered, the Hall chip has a risk of running out of the plastic shell.
Therefore, how to make the packaging structure of the hall sensor small under the size limit of the peripheral auxiliary test circuit PCB is a problem to be solved in the prior art.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a hall current sensor packaging structure is provided, reduce hall current sensor packaging structure's three-dimensional size.
In order to solve the above problem, the utility model provides a hall current sensor packaging structure specifically includes: a core piece having a C-notch; the detection chip is arranged at the C-shaped notch of the magnetic core piece; and the lead frame penetrates through the C-shaped notch of the magnetic core piece, is attached to the detection chip and serves as a primary side wire of the Hall current sensor. The packaging structure of the Hall current sensor further comprises a packaging shell, and the packaging shell wraps the lead frame, the magnetic core piece and the detection chip. The magnetic core piece is arranged in the packaging shell, the assembly step of manually inserting the magnetic core piece is reduced, the magnetic core piece is provided with a C-shaped notch and used for placing a detection chip, and the detection chip is placed in the C-shaped notch and overlapped with the upper surface of the lower part of the C-shaped notch; the lead frame penetrates through the C-shaped notch of the magnetic core piece to serve as a primary side wire of the Hall current sensor, the function of a primary side current circuit is replaced, and the volume required by packaging is reduced after a primary side current wire is eliminated; the packaging shell is used for packaging the lead frame, the magnetic core piece and the detection chip, a limit groove buckle is omitted, the leading-out pins of the Hall chip do not need to be fixed through the limit groove buckle in the assembling process, and the production efficiency and the production quality are improved.
The Hall current sensor packaging structure further comprises a chip frame structure, the detection chip is wrapped by the insulation plastic package body and is arranged in the chip frame structure, and the chip frame structure is designed to be highly matched with the C-shaped notch, so that the risk that the Hall current sensor runs out of the plastic shell due to continuous mechanical vibration is avoided. The chip frame structure is independent of the lead frame and used for isolating a primary side wire and a secondary side wire of the Hall current sensor, the Hall chip is reflected in a voltage mode in the secondary side according to magnetic flux change caused by primary side current change, the area of the lead frame close to the Hall chip is set as the primary side wire and is independent of the chip frame structure, high insulation can be achieved, and therefore safety of products is improved.
Chip frame construction has three formula pin and chip bracket cut straightly, cut straightly the formula pin and be used for connecting external circuit board, under the condition that does not change the PCB design, the utility model discloses a hall current sensor packaging structure still can the adaptation. The chip bracket is used for placing a detection chip, and the detection chip is wrapped by the plastic package and then placed on the upper surface of the lower part of the C-shaped notch of the magnetic core piece through the chip bracket and isolated from the high-voltage current on the primary side, so that the pressure resistance of the product is improved.
The chip is fixed on the lead frame by embedding the chip tray from the C-shaped notch of the magnetic core piece, the magnetic core piece can be a built-in C-shaped magnetic core or other magnetic cores comprising the C-shaped notch, and the magnetic core piece can aggregate the equal-ratio magnetic field generated around the primary side wire to be measured, so that the induction strength of the Hall sensor is enhanced, and the sensitivity of the sensor is improved.
The lead frame is made of a non-magnetic material, can be a non-magnetic copper material without iron and nickel, and can also be other non-magnetic materials capable of conducting electricity. The chip frame structure is used as a secondary side wire of the Hall current sensor, and the integrated design is adopted, so that the detection chip can be integrally packaged, and the production efficiency is improved.
The magnetic core piece is a silicon steel sheet magnetic core, and has smaller volume and height compared with a ferrite magnetic core, and the volume of the Hall current sensor packaging structure is further reduced by reducing the volume of the magnetic core piece, particularly the height of a product is reduced.
According to the technical scheme, the limit groove buckle is eliminated, the magnetic core piece is arranged in the limit groove buckle, the lead frame is used as the primary side current lead, the size of the Hall current sensor packaging structure is reduced by changing the magnetic core piece and other modes, the assembling steps are reduced, and the production efficiency and the product quality are improved. The lead frame adopts the non-magnetic copper material that does not contain iron and nickel, has the impedance little, and the characteristic that power loss is low can be through the heavy current, benefits from the hall current sensor packaging structure who regards the lead frame as primary side current wire simultaneously, uses this packaging structure's hall current sensor can detect the heavy current to detect the chip and arrange chip frame structure in by the parcel of insulating plastic-sealed body, chip frame structure is independent of the lead frame, possesses the security that high insulating nature has improved the product greatly.
Drawings
Fig. 1 is a top view of a hall current sensor module package.
Fig. 2 is a side view of a hall current sensor module package.
Fig. 3 is a top view of a hall current sensor package according to an embodiment of the present invention.
Fig. 4 is an internal structural view of a hall current sensor according to an embodiment of the present invention.
Fig. 5 is a chip frame structure diagram of a hall current sensor according to an embodiment of the present invention.
Fig. 6 is a schematic diagram of a magnetic member embedded in a hall current sensor chip according to an embodiment of the present invention.
Fig. 7 is a lead frame structure diagram of a hall current sensor according to an embodiment of the present invention.
Fig. 8 is a side view of a package of a hall current sensor according to an embodiment of the present invention.
Detailed Description
The following describes in detail a specific embodiment of the hall current sensor package structure provided by the present invention with reference to the drawings.
Fig. 3 is a top view of a hall current sensor package according to an embodiment of the present invention. Fig. 4 is an internal structural view of the hall current sensor shown in fig. 3. The hall current sensor packaging structure specifically includes: the detection chip 101 shown in fig. 4, the core member 501 shown in fig. 4, the lead frame 401 shown in fig. 4, and the package case 601 shown in fig. 1. The magnetic core piece 501 is arranged in the packaging shell 601, so that the assembly step of manually inserting the magnetic core piece is reduced, the magnetic core piece is provided with a C-shaped notch 801 shown in FIG. 4 and used for placing the detection chip 101, and the detection chip 101 is placed in the C-shaped notch 801 and is overlapped with the upper surface of the lower part of the C-shaped notch 801; the lead frame 401 penetrates through the C-shaped notch 801 of the magnetic core piece, in the embodiment, the connecting portion 901 in the middle of the lead frame 401 is overlapped with the lower surface of the upper portion of the C-shaped notch 801, the lead frame is used as a primary lead of the hall current sensor to replace the function of a primary current path, the volume required by the package is reduced after the primary current path is eliminated, and the required length is reduced from 16.21mm to 13mm as shown in fig. 3; the packaging shell 601 is used for packaging the lead frame 401, the magnetic core piece 501 and the detection chip 101, limiting groove buckles 701, 702 and 703 shown in fig. 1 are omitted, and the leading-out pins of the hall chip do not need to be fixed through the limiting groove buckles in the assembling process, so that the production efficiency and the production quality are improved.
The packaging structure of the hall current sensor further comprises a chip frame structure shown in fig. 5, the detection chip 101 is wrapped by the insulation plastic package body and is arranged in the chip frame structure 201, and the chip frame structure 201 is designed to be highly matched with the C-shaped notch 801 and can be just clamped inside the C-shaped notch 801, so that the risk that the chip runs out of the plastic shell due to continuous mechanical vibration of the hall current sensor is avoided. The chip frame structure is independent of the lead frame 401, the lead frame 401 is structured as shown in fig. 8, the lead frame 401 is independently designed to isolate a primary side wire and a secondary side wire of the hall current sensor, the hall chip is embodied in the secondary side in a voltage mode according to the change of magnetic flux caused by the change of the primary side current, the primary side wire is a high-voltage area, an area of the lead frame close to the hall chip is set as the primary side wire, and is independent of the chip frame structure, high insulation can be achieved, and therefore safety of products is improved.
Chip frame construction has three formula pin 301 of cuting straightly as shown in fig. 5 and chip bracket 201, formula pin 301 of cuting straightly is used for connecting external circuit board, under the condition that does not change the PCB design, the utility model discloses a hall current sensor packaging structure still can the adaptation. The chip bracket 201 is used for placing the detection chip 101, the detection chip 101 is placed on the upper surface of the lower portion of the C-shaped notch 801 of the magnetic core piece through the chip bracket 201 after being wrapped by plastic package, and is isolated from primary high-voltage current, so that the pressure resistance of a product is improved.
As shown in fig. 6, the chip is fixed to the lead frame 401 shown in fig. 7 by fitting the chip tray 201 into the C-shaped notch 801 of the magnetic core member 501, which may be a built-in C-shaped core or another core including a C-shaped notch, and the magnetic core member can integrate the amount of the proportional magnetic field generated around the primary wire to be measured, thereby increasing the induction strength of the hall sensor and improving the sensor sensitivity.
The lead frame is made of a non-magnetic material, can be a non-magnetic copper material without iron and nickel, and can also be other non-magnetic materials capable of conducting electricity. The chip frame structure is used as a secondary side wire of the Hall current sensor, and the integrated design is adopted, so that the detection chip can be integrally packaged, and the production efficiency is improved.
According to the technical scheme, the limit groove buckle is eliminated, the magnetic core piece is arranged in the limit groove buckle, the lead frame is used as the primary side current lead, the size of the Hall current sensor packaging structure is reduced by changing the magnetic core piece and other modes, the assembling steps are reduced, and the production efficiency and the product quality are improved. The lead frame adopts the non-magnetic copper material that does not contain iron and nickel, has the impedance little, and the characteristic that power loss is low can be through 200A heavy current, benefit from the hall current sensor packaging structure who regards the lead frame as primary side current wire simultaneously, use this packaging structure's hall current sensor can detect the heavy current to detect the chip and arrange chip frame structure in by the parcel of insulating plastic-sealed body, chip frame structure is independent of the lead frame, possesses the security that high insulating nature has improved the product greatly.
In another embodiment, the magnetic core member is a silicon steel sheet magnetic core, and has a smaller volume and height compared with a magnetic core of ferrite, and by reducing the volume of the magnetic core member, the volume of the hall current sensor package structure is further reduced, especially the height of the product is reduced, as shown in fig. 8, a side view of the hall current sensor package provided by an embodiment of the present invention is only 7mm, and the package volume of the hall current sensor is further reduced on the basis of the previous embodiment.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations should also be regarded as the protection scope of the present invention.
Claims (9)
1. A Hall current sensor packaging structure, comprising:
a core piece having a C-notch;
the detection chip is arranged at the C-shaped notch of the magnetic core piece;
and the lead frame penetrates through the C-shaped notch of the magnetic core piece, is attached to the detection chip and serves as a primary side wire of the Hall current sensor.
2. The hall current sensor package structure of claim 1, further comprising a package casing, wherein the package casing encloses the lead frame, the core piece, and the sense die.
3. The hall current sensor package structure of claim 2, further comprising:
a chip frame structure;
the detection chip is wrapped by the insulation plastic package body and is arranged in the chip frame structure, and the chip frame structure is independent of the lead frame and used for isolating a primary side wire and a secondary side wire of the Hall current sensor.
4. The hall current sensor package structure of claim 3, wherein the chip frame structure has three in-line pins, and a chip carrier;
the direct-insert pin is used for connecting an external circuit board, and the chip bracket is used for placing a detection chip.
5. The Hall current sensor package structure of claim 4, wherein a sense chip is fixed on the lead frame by inserting a chip tray from the C-shaped notch of the core piece.
6. The Hall current sensor package structure of claim 5, wherein the chip frame structure acts as a secondary wire of the Hall current sensor.
7. The Hall current sensor package structure of claim 6, wherein the lead frame is made of a non-magnetic material.
8. The hall current sensor package structure of claim 7, wherein the nonmagnetic material is a nonmagnetic copper material that does not contain iron and nickel.
9. The hall current sensor package structure of claim 1, wherein the magnetic core piece is a silicon steel sheet magnetic core, reducing the volume of the magnetic core piece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121112725.1U CN215118942U (en) | 2021-05-21 | 2021-05-21 | Hall current sensor packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121112725.1U CN215118942U (en) | 2021-05-21 | 2021-05-21 | Hall current sensor packaging structure |
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| Publication Number | Publication Date |
|---|---|
| CN215118942U true CN215118942U (en) | 2021-12-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202121112725.1U Active CN215118942U (en) | 2021-05-21 | 2021-05-21 | Hall current sensor packaging structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114543647A (en) * | 2022-02-18 | 2022-05-27 | 江苏兴宙微电子有限公司 | Physical quantity detecting device |
| CN116068239A (en) * | 2023-03-30 | 2023-05-05 | 宁波中车时代传感技术有限公司 | Packaging structure and packaging process of current sensor |
-
2021
- 2021-05-21 CN CN202121112725.1U patent/CN215118942U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114543647A (en) * | 2022-02-18 | 2022-05-27 | 江苏兴宙微电子有限公司 | Physical quantity detecting device |
| CN116068239A (en) * | 2023-03-30 | 2023-05-05 | 宁波中车时代传感技术有限公司 | Packaging structure and packaging process of current sensor |
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