CN214848680U - Perovskite solar cell and perovskite solar module thereof - Google Patents

Abstract

The utility model discloses a perovskite solar cell and perovskite solar energy component thereof. The perovskite solar cell comprises a light-transmitting substrate, a transparent conducting electrode layer, a hole transport layer, a perovskite photosensitive layer, an electron transport layer and a metal electrode layer which are sequentially stacked; an energy level matching gradient layer is further arranged between the hole transport layer and the perovskite photosensitive layer, and the energy level matching gradient layer comprises a p-type doped polyaniline film. The utility model discloses a set up p type doping state polyaniline on the hole transport layer, the construction forms hole transport energy level gradient layer, has effectively solved the energy level loss between hole transport layer and the photosensitive layer of perovskite among the prior art, has reduced perovskite solar cell's open circuit voltage loss, and the composite loss of current carrier when transmission and extraction to the photovoltaic performance of perovskite solar cell and subassembly has effectively been promoted.

Description

Perovskite solar cell and perovskite solar module thereof

Technical Field

The utility model belongs to the technical field of photovoltaic device, concretely relates to perovskite solar cell and perovskite solar energy component thereof.

Background

At present, more and more perovskite solar researchers and enterprises are dedicated to the industrial popularization and application of perovskite solar cells. The photoelectric conversion efficiency of the perovskite solar cell with the size and the specification of the laboratory size reaches 25.6 percent, exceeds the laboratory efficiency of the polycrystalline silicon cell, and has little difference of 26.5 percent from the laboratory efficiency of the monocrystalline silicon. This gives perovskite researchers great confidence to push this type of cell to industrialization.

The inverted perovskite solar cell sequentially comprises the following components from top to bottom: the device comprises carrier glass, a transparent conductive film electrode, a hole transport layer, a perovskite photosensitive layer, an electron transport layer and a metal electrode; because the hysteresis effect is not obvious, the characteristics of better stability of the battery and the component are favored by researchers. Meanwhile, the operability of the perovskite solar cell with the inverted structure in industrial production is stronger than that of the perovskite solar cell with the upright structure. At present, in the inverted structure, a hole transport layer prepared by using hole transport layer materials such as nickel oxide (NiOx), poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ] (PTAA), copper oxide, cuprous oxide and cuprous thiocyanate has relatively large energy level loss with a perovskite photosensitive layer, so that the open circuit voltage of the perovskite solar cell with the inverted structure is lower than that of the perovskite solar cell with the upright structure. Among them, the construction of a hole transport level gradient layer is one of the most effective methods for increasing the open circuit voltage (Voc) of a perovskite solar cell.

In the prior art, a NiOx/PTAA double-hole transport material is used as a hole transport layer, although the energy level loss of perovskite and the hole transport layer can be effectively reduced, the wettability of a perovskite photosensitive layer solution on the PTAA is poor due to poor compatibility of the PTAA and the perovskite solution, so that the film forming quality of the perovskite photosensitive layer is poor, the photoelectric conversion efficiency of the perovskite solar cell with an inverted structure is not greatly improved, and the perovskite solar cell is not suitable for the industrialized production of the perovskite technology.

SUMMERY OF THE UTILITY MODEL

The main object of the utility model is to provide a perovskite solar cell and perovskite solar module thereof to overcome the not enough that exists among the prior art.

In order to achieve the above object, the embodiment of the present invention adopts a technical solution comprising:

the embodiment of the utility model provides a perovskite solar cell, including the printing opacity basement, transparent conductive electrode layer, hole transport layer, the photosensitive layer of perovskite, electron transport layer, the metal electrode layer that stack up in proper order; an energy level matching gradient layer is further arranged between the hole transport layer and the perovskite photosensitive layer, and the energy level matching gradient layer comprises a p-type doped polyaniline film. Wherein the energy level matching gradient layer can reduce energy level loss at the perovskite photosensitive layer and the hole transport layer.

Further, the p-type doped polyaniline film is mainly formed of p-type doped polyaniline.

Further, the p-type doped polyaniline is distributed on the surface of the hole transport layer.

Further, the thickness of the p-type doped polyaniline film is 5-20 nm.

Furthermore, the perovskite solar cell is of an inverted structure.

Further, the light-transmitting substrate adopts carrier glass.

The embodiment of the utility model provides a perovskite solar energy component is still provided, include perovskite solar cell.

Compared with the prior art, the utility model discloses following beneficial effect has:

(1) the utility model discloses a p type doping state polyaniline sets up on Hole Transport Layer (HTL), can effectually found hole transport energy level gradient layer to reduce the energy level loss of the photosensitive layer of perovskite and hole transport layer department, reduce perovskite solar cell's open circuit voltage loss (Voc loss), thereby effectively improved perovskite solar cell's open circuit voltage. Meanwhile, the loss of the carrier in transmission and extraction is effectively reduced due to the constructed hole transmission energy level gradient layer, so that the short-circuit current and the filling factor of the perovskite solar cell are improved, and the photoelectric conversion efficiency of the perovskite solar cell and the component is finally and effectively improved.

(2) The utility model discloses an energy level gradient layer that doped state polyaniline found, the photosensitive layer film forming quality poor problem of perovskite that leads to of the double hole transport layer technology that has effectively solved among the prior art adoption NiOx PTAA preparation has increased substantially the performance of inverted structure perovskite solar cell and subassembly again, provides effective technological method for perovskite solar cell industrial production.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.

Fig. 1 is a schematic structural view of a perovskite solar cell according to an embodiment of the present application.

Description of reference numerals: 100. the solar cell comprises a perovskite solar cell 110, a cell main body structure 111, a perovskite photosensitive layer 112, a hole transport layer 113, an electron transport layer 114, an energy level matching gradient layer p-type doped polyaniline film 120, a transparent conductive thin film electrode 130, a metal electrode 140 and carrier glass.

Detailed Description

In view of the deficiencies in the prior art, the inventor of the present invention has made extensive studies and practices to provide the technical solution of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention, as the term "and/or" is used herein to encompass any and all combinations of one or more of the associated listed items.

An aspect of an embodiment of the present invention provides a perovskite solar cell, including carrier glass (i.e., the aforementioned transparent substrate, the same below), a transparent conductive thin film electrode (i.e., the aforementioned transparent conductive electrode, the same below) disposed on the carrier glass, a metal electrode, and a cell main body structure located between the transparent conductive thin film glass electrode and the metal electrode; the battery main body structure comprises a perovskite photosensitive layer, a hole transport layer positioned on one side of the perovskite photosensitive layer, an energy level matching gradient layer built on the hole transport layer and an electron transport layer positioned on the other side of the perovskite photosensitive layer.

The energy level matching gradient layer built on the hole transport layer is made of p-type doped polyaniline, the energy level matching degree of the energy level matching gradient layer with a hole transport layer material commonly used in the existing industrial production is high, the operability in the industrial production is high, and the built hole transport energy level gradient layer can effectively solve the problems that in the prior art, the energy level between the perovskite photosensitive layer and the hole transport layer is lost, the combination of carriers is serious during transmission and extraction, and the like.

Specifically, the built energy level matching gradient layer doped polyaniline is directly coated on the hole transport layer, and the thickness of the built energy level matching gradient layer doped polyaniline is 5-20 nm.

Another aspect of an embodiment of the present invention also provides a perovskite solar module, including the perovskite solar cell.

The technical solution, the implementation process and the principle thereof will be further explained with reference to the drawings.

Referring to fig. 1, a perovskite solar cell 100 includes a carrier glass 140, a transparent conductive thin film electrode 120 disposed on the carrier glass 140, a metal electrode 130, and a cell body structure 110 located between the transparent conductive thin film electrode 120 and the metal electrode 130.

In this embodiment, the cell body structure 110 includes a perovskite photoactive layer 111, a hole transport layer 112 on one side of the perovskite photoactive layer 111, an energy-level-matching graded layer p-type doped polyaniline film 114 coated over the hole transport layer 112, and an electron transport layer 113 on the other side of the perovskite photoactive layer 111.

The carrier glass 140 is mainly used as a carrier of the transparent conductive thin film electrode 120, the carrier glass 140 may be any base glass used in conductive glass, and the thickness of the carrier glass 140 is 1.1mm to 2.5mm, so that not only can sufficient mechanical bearing capacity be ensured, but also the absorption of the carrier glass 140 to light can be reduced, so that more light enters the cell main body structure 110, and the absorption utilization rate of the cell to light is increased.

The transparent conductive thin film electrode 120 and the metal electrode 130 both have a main function of guiding out a photo-generated current.

In this embodiment, the transparent conductive film electrode 120 is an FTO electrode, that is, a fluorine-doped tin oxide electrode, so that the absorption of the transparent conductive film electrode 120 to ultraviolet light is enhanced, and the ultraviolet light entering the electron transport layer is further reduced; in addition, the FTO electrode also has the advantages of low resistivity and stable chemical performance; of course, it is understood that the transparent conductive thin film electrode is not limited to the FTO electrode, but may be a tin-doped indium oxide (ITO) electrode, a titanium-doped indium oxide (ITiO) electrode, a cerium-doped indium oxide (ICO) electrode, a tungsten-doped indium oxide (IWO) electrode, an aluminum-doped zinc oxide (AZO) electrode, or a boron-doped zinc oxide (BZO) electrode.

In the present embodiment, the metal electrode 130 is a silver (Ag) electrode; of course, it is understood that the metal electrode 130 is not limited to a silver (Ag) electrode, but may be an electrode made of other metals, such as a gold (Au) electrode, an aluminum (Al) electrode.

Specifically, the hole transport layer 112 mainly functions to transport holes and also functions to block electrons; the thickness of the hole transport layer 112 is 20-100 nm, so that the film forming quality can be ensured, and the defects of the hole transport layer 112 are reduced; the internal series resistance can be ensured to be lower, and the improvement of short-circuit current is facilitated; in this embodiment, the hole transport layer is nickel oxide (NiOx) and is vacuum deposited directly on the transparent conductive thin film electrode 120 (FTO); of course, it is understood that the hole transport layer is not limited to nickel oxide (NiOx), but may be other hole transport materials such as PTAA, Spiro-OMeTAD, copper oxide, cuprous oxide, or cuprous thiocyanate.

Specifically, the p-type doped polyaniline film 114 with the energy level matching gradient layer is mainly used for constructing an effective hole transmission energy level gradient layer, reducing energy level loss between the hole transmission layer 112 and the perovskite photosensitive layer 111, and reducing open-circuit voltage loss (Voc loss) of the perovskite solar cell and carrier recombination during carrier transmission and extraction, so that the voltage (Voc), the short-circuit current (Jsc) and the Fill Factor (FF) of the perovskite solar cell are effectively improved, and the efficiency of the perovskite solar cell assembly are further effectively improved.

In the embodiment, the thickness of the p-type doped polyaniline film is 5-20 nm, so that the highest efficiency of hole transmission can be ensured, and the energy level loss between the interface of the perovskite and the hole transmission layer and the recombination of carriers during transmission and extraction are minimum; in addition, the p-type doped polyaniline film 114 of the energy level matching gradient layer constructed in the embodiment is formed by directly treating an eigenstate polyaniline film coated on a nickel oxide (NiOx) of a hole transport layer with a protonic acid or an aprotic acid; dissolving eigenstate polyaniline in a solvent such as DMF (dimethyl formamide) or ethylene glycol monomethyl ether with the concentration of 0.1-5 mg/mL, spin-coating on a nickel oxide (NiOx) hole transport layer, annealing at 80-120 ℃ for 5-15 min, then placing the film in protonic acid (hydrochloric acid, sulfuric acid or nitric acid) or aprotic acid (dodecyl benzene sulfonic acid, camphor sulfonic acid and the like) to soak for 2-10 min to obtain doped state polyaniline, and constructing a hole transport level gradient layer; the preparation method is simple, has strong operability in the industrial production of the perovskite solar cell, has low process cost, and is beneficial to promoting the industrial development of the perovskite solar cell.

Specifically, the electron transport layer 113 mainly functions to transport electrons and block holes, thereby reducing the recombination of hole and electron and playing a role in selectively transporting electrons; the thickness of the electron transmission layer is 40-100 nm, so that the film forming quality can be guaranteed, the defects of electrons during transmission can be reduced, the internal series resistance can be ensured to be low, and the short-circuit current can be improved; in this embodiment, the electron transport layer is PCBM and is applied directly over the perovskite photoactive layer 111.

The inventor of the utility model finds that: by adopting the p-type doped polyaniline which is prepared simply and matched with the energy level, a hole transmission energy level gradient layer can be constructed effectively, so that the energy level loss at the positions of the perovskite photosensitive layer and the hole transmission layer is reduced, the open-circuit voltage loss (Voc loss) of the battery and the recombination of current carriers during transmission and extraction are reduced, the open-circuit voltage (Voc), the short-circuit current (Jsc) and the Fill Factor (FF) of the perovskite solar cell are effectively improved, the photovoltaic performance of the perovskite solar cell and the perovskite solar cell assembly is effectively improved finally, and the industrialized development of the perovskite solar cell is promoted.

The present embodiment also provides a perovskite solar module comprising the perovskite solar cell as described above.

Of course, it is understood that the perovskite solar module includes other components besides the perovskite solar cell, and the selection and specific structure of these components may be set by those skilled in the art according to actual situations, and will not be described herein again.

Above-mentioned perovskite solar module, owing to adopt the perovskite solar cell that the utility model provides, so improved the photovoltaic performance of perovskite solar cell, and reduced the cost of perovskite solar cell; thereby improving the photovoltaic performance of the perovskite solar module and reducing the production cost of the perovskite solar module.

Example 1

A preparation method of a perovskite solar cell comprises the following steps:

(1) evaporating an FTO transparent electrode on clean transparent substrate glass, and then depositing NiOx with the thickness of 20nm on the FTO transparent electrode in a vacuum manner through Physical Vapor Deposition (PVD) to obtain a hole transport layer;

(2) spin-coating an eigenstate polyaniline solution (0.5mg/mL ethylene glycol monomethyl ether solution of eigenstate polyaniline) on NiOx at a speed of 3000r for 15s, annealing at 100 ℃ for 10min, and then soaking in dodecylbenzene sulfonic acid for 6min to obtain p-type doped polyaniline of an energy level matching gradient layer;

(3) spin-coating 1.5M perovskite solution on NiOx coated with p-type doped polyaniline of the energy level matching gradient layer, and annealing at 100 ℃ for 15min to form a perovskite photosensitive layer;

(4) spin-coating a 20mg/mL PCBM chlorobenzene solution on the perovskite photosensitive layer at a rotating speed of 3000r, and annealing at 100 ℃ for 10min to obtain an electron transport layer;

(5) and depositing a metal Ag electrode on the electron transport layer in a gas phase manner to obtain the perovskite solar cell, which is marked as B.

Comparative example 1

A perovskite solar cell adopting the above preparation method is substantially the same as that in example 1 except that no p-type doped polyaniline of an energy level matching gradient layer is prepared. The perovskite solar cell obtained in comparative example 1 is denoted a.

Comparative example 2

The perovskite solar cell is prepared by the method which is basically consistent with the method in the embodiment 1, except that the p-type doped polyaniline of the energy level matching gradient layer is not prepared, and the double-hole transport layer is prepared by NiOx/PTAA. The perovskite solar cell obtained in comparative example 2 is denoted C.

Comparative example 3

A perovskite solar cell employing the above fabrication method is substantially identical to the method of example 1 except that the level-matching graded layer p-type doped polyaniline is replaced with CuSCN. The perovskite solar cell obtained in comparative example 3 is denoted D.

The perovskite solar cells A, B, C, D in the examples and comparative examples were subjected to performance testing using a simulated light source system, with the relevant performance test results as shown in table 1 below.

Table 1A, B, C, D photovoltaic performance test results for perovskite solar cells

Battery with a battery cell	Voc(V)	Jsc(mA/cm2)	FF(％)	PCE(％)
					A	0.93	20.05	68.89	12.85
B	1.05	21.13	77.98	17.30
					C	1.00	19.89	72.34	14.39
D	0.97	20.13	71.47	13.96

It can be seen from table 1 that the open circuit voltage (Voc) of the battery B prepared by using the p-type doped polyaniline film of the hole transport level gradient layer of the present invention is significantly higher than that of the battery a without the hole transport level gradient layer, because the energy loss between the hole transport layer and the perovskite photosensitive layer is reduced after the hole transport level gradient layer is prepared, the open circuit voltage loss (Voc loss) of the battery is reduced, thereby effectively improving the open circuit voltage (Voc) of the battery; in addition, the comparison of the batteries A and B shows that the serious problem of recombination during extraction and transmission of current carriers between the perovskite and the hole transport layer is effectively reduced after the p-type doped polyaniline film of the hole transport level gradient layer is prepared, so that the short-circuit current (Jsc) and the Fill Factor (FF) of the perovskite solar battery B are effectively improved.

Compared with a battery C adopting a NiOx/PTAA double-hole-transport layer in the prior art, the battery B prepared by adopting the p-type doped polyaniline of the hole-transport-level gradient layer has the advantages that the open-circuit voltage (Voc), the short-circuit current (Jsc) and the Filling Factor (FF) are obviously improved, and the p-type doped polyaniline of the hole-transport-level gradient layer prepared by the invention has good compatibility with a perovskite photosensitive layer, so that perovskite crystals can well nucleate and grow, and the perovskite photosensitive layer with good quality is obtained. After the p-type doped polyaniline of the hole transport level gradient layer prepared by the method is changed into CuSCN, the photovoltaic performance parameters of the prepared battery D are far inferior to those of the perovskite battery B prepared by the p-type doped polyaniline film of the hole transport level gradient layer.

In conclusion, after the p-type doped polyaniline film with the hole transport energy level gradient layer prepared by the utility model is adopted, the energy level loss between the hole transport layer and the perovskite photosensitive layer is effectively reduced, so that the open-circuit voltage loss (Voc loss) of the perovskite battery is reduced, and the open-circuit voltage (Voc) of the battery is effectively improved. Meanwhile, after the p-type doped polyaniline film with the hole transport level gradient layer is prepared by the utility model, the recombination of carrier extraction and transmission between the hole transport layer and the perovskite photosensitive layer is effectively reduced, the short-circuit current (Jsc) and the Fill Factor (FF) of the perovskite solar cell are further improved, and the finally prepared perovskite solar cell B obtains excellent photoelectric conversion efficiency; and the utility model discloses preparation method is simple, and maneuverability is strong in perovskite solar cell industrial production, and low in process cost is favorable to promoting perovskite solar cell industrialization development.

In addition, the utility model discloses a still refer to the aforesaid embodiment, have tested with other raw materials, process operation, process conditions mentioned in this specification to all obtain comparatively ideal result.

While the invention has been described with reference to illustrative embodiments, it will be understood by those skilled in the art that various other changes, omissions and/or additions may be made and substantial equivalents may be substituted for elements thereof without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from its scope. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed for carrying out this invention, but that the invention will include all embodiments falling within the scope of the appended claims.

Claims (10)

1. A perovskite solar cell comprises a light-transmitting substrate, a transparent conductive electrode layer, a hole transport layer, a perovskite photosensitive layer, an electron transport layer and a metal electrode layer which are sequentially stacked; the method is characterized in that: an energy level matching gradient layer is further arranged between the hole transport layer and the perovskite photosensitive layer, and the energy level matching gradient layer comprises a p-type doped polyaniline film.

2. The perovskite solar cell of claim 1, wherein: the p-type doped polyaniline film is distributed on the surface of the hole transport layer.

3. The perovskite solar cell of claim 2, wherein: the thickness of the p-type doped polyaniline film is 5-20 nm.

4. The perovskite solar cell of claim 1, wherein: the thickness of the light-transmitting substrate is 1.1 mm-2.5 mm.

5. The perovskite solar cell of claim 1, wherein: the transparent conductive electrode layer comprises one or the combination of more than two of a fluorine-doped tin oxide electrode, a tin-doped indium oxide electrode, a titanium-doped indium oxide electrode, a cerium-doped indium oxide electrode, a tungsten-doped indium oxide electrode, an aluminum-doped zinc oxide electrode or a boron-doped zinc oxide electrode.

6. The perovskite solar cell of claim 1, wherein: the thickness of the hole transport layer is 20-100 nm.

7. The perovskite solar cell of claim 1, wherein: the thickness of the electron transmission layer is 40-100 nm.

8. The perovskite solar cell of claim 1, wherein: the light-transmitting substrate adopts carrier glass.

9. The perovskite solar cell of claim 1, wherein: the perovskite solar cell is of an inverted structure.

10. A perovskite solar module comprising the perovskite solar cell of any one of claims 1 to 9.

Images