CN214848606U - High heat dissipation intelligent power module - Google Patents
High heat dissipation intelligent power module Download PDFInfo
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- CN214848606U CN214848606U CN202120671462.1U CN202120671462U CN214848606U CN 214848606 U CN214848606 U CN 214848606U CN 202120671462 U CN202120671462 U CN 202120671462U CN 214848606 U CN214848606 U CN 214848606U
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- copper layer
- heat dissipation
- welding
- chip
- power
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A high heat dissipation intelligent power module comprises an insulating glue block, a ceramic substrate and a power assembly, wherein the ceramic substrate comprises a ceramic body, a welding copper layer and a heat dissipation copper layer, the welding copper layer is arranged on one side surface of the ceramic body, the welding copper layer and the ceramic body are both positioned in the insulating glue block, the heat dissipation copper layer is arranged on the other side surface of the ceramic body, part of the heat dissipation copper layer is positioned in the insulating glue block, the power assembly comprises a power chip, an IC chip, a power pin, a control pin and a metal bonding wire, the power chip and the IC chip are arranged on the welding copper layer at intervals, the power pin is arranged on the welding copper layer, the power pin is partially positioned in the insulating glue block, the control pin is partially accommodated outside the insulating glue block, the metal bonding wire is respectively connected with the control pin and the welding copper layer, the IC chip is welded on the welding copper layer, heat can be dissipated through the heat dissipation copper layer, and the heat dissipation effect is improved, the control pin is connected to the welding copper layer by using a metal bonding wire, so that the problem of desoldering is avoided, and the quality of the module is improved.
Description
Technical Field
The utility model relates to a power module field especially relates to a high heat dissipation intelligent power module.
Background
An Intelligent Power Module (IPM) is an advanced Power switch device with logic, control, detection and protection circuits integrated inside, and is formed by integrating a chip with specific functions with an electronic device and packaging the integrated chip and electronic device in an insulating shell to form a relatively independent Module with certain functions.
The current IPM comprises two parts, i.e. an IC chip and a power chip, wherein the power chip can be an IGBT + FRD, a MOS transistor, or an RC-IGBT, in order to obtain good heat dissipation performance, the power chip is generally soldered on a ceramic substrate, the IC chip has a plurality of metal contacts, the distance between the metal contacts is too close, the existing mechanical stamping process can not manufacture the copper pins with high density, therefore, it is necessary to use a PCB for conversion, specifically, an IC chip is soldered on the PCB, the PCB is electrically connected to a ceramic substrate, and external control side pins are soldered on the PCB, but since the number of control side pins is large, it is easy to cause the individual control side pins to be detached during the reflow soldering process, thereby causing the module to fail, and furthermore, since the IPM includes the PCB inside, the used size of the ceramic substrate is reduced, thereby affecting the heat dissipation effect of the IPM.
SUMMERY OF THE UTILITY MODEL
The utility model aims at overcoming the weak point among the prior art, providing a high heat dissipation intelligent power module, can ensure that control side pin and IC chip are effectively connected, can avoid leading to the not good problem of heat dissipation because of ceramic substrate is compressed simultaneously.
The purpose of the utility model is realized through the following technical scheme:
a high heat dissipation smart power module comprising:
an insulating rubber block;
the ceramic substrate comprises a ceramic body, a welding copper layer and a heat dissipation copper layer, wherein the welding copper layer is arranged on one side surface of the ceramic body, the welding copper layer and the ceramic body are both positioned in the insulating rubber block, the heat dissipation copper layer is arranged on the other side surface of the ceramic body, and part of the heat dissipation copper layer is positioned in the insulating rubber block;
the power assembly comprises a power chip, an IC chip, a power pin, a control pin and a metal bonding wire, wherein the power chip and the IC chip are arranged on the welding copper layer at intervals, the power pin is arranged on the welding copper layer, the power pin is partially positioned in the insulating rubber block, the control pin is partially accommodated outside the insulating rubber block, and the metal bonding wire is respectively connected with the control pin and the welding copper layer.
In one embodiment, the side of the heat-dissipating copper layer away from the ceramic body coincides with the outer sidewall of the dielectric block.
In one embodiment, the thickness of the heat-dissipating copper layer is greater than the thickness of the soldering copper layer.
In one embodiment, the thickness of the heat dissipation copper layer is 0.4 mm-0.8 mm.
In one embodiment, the insulating rubber block is an epoxy resin insulating rubber block.
In one embodiment, a fixing step is arranged on the end part of the control pin in the insulating rubber block, and the fixing step is connected with the metal bonding wire.
In one embodiment, the power chip and the IC chip are respectively soldered on the solder copper layer.
In one embodiment, the power pin includes a welding rod, an extension rod and a support rod, the extension rod is accommodated in the insulating rubber block, one end of the welding rod is connected with the extension rod, the other end of the welding rod is welded on the welding copper layer, and the support rod is connected with the extension rod.
In one embodiment, the welding rod, the extension rod and the support rod are integrally formed.
Compared with the prior art, the utility model discloses at least, following advantage has:
the utility model discloses a high heat dissipation intelligence power module, including the insulating cement piece, ceramic substrate and power component, ceramic substrate includes the ceramic body, welding copper layer and heat dissipation copper layer, the welding copper layer sets up on a side of ceramic body, and welding copper layer and ceramic body all are located the insulating cement piece, the heat dissipation copper layer sets up on another side of ceramic body, and heat dissipation copper layer part is located the insulating cement piece, power component includes the power chip, the IC chip, the power pin, control pin and metal bonding line, power chip and IC chip interval set up on the welding copper layer, the power pin sets up on the welding copper layer, and power pin part is located the insulating cement piece, control pin part holds outside the insulating cement piece, the metal bonding line is connected with control pin and welding copper layer respectively, through directly welding the IC chip to the welding copper layer of ceramic substrate, so that the heat that produces can distribute through the heat dissipation copper layer fast, the radiating effect is improved, the pins are controlled to be connected to the welding copper layer through the metal bonding wires, the problem of desoldering caused by reflow soldering is avoided, and the quality of the module is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a high heat dissipation intelligent power module according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of the high heat dissipation intelligent power module shown in fig. 1;
fig. 3 is a schematic structural diagram of a control pin according to an embodiment of the present invention.
Detailed Description
In order to facilitate understanding of the present invention, the present invention will be described more fully hereinafter with reference to the accompanying drawings. The preferred embodiments of the present invention are shown in the drawings. The invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only and do not represent the only embodiments.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It is noted that as used herein, reference to an element being "connected" to another element also means that the element is "in communication" with the other element, and fluid can be in exchange communication between the two.
Referring to fig. 1 and 2, a high heat dissipation intelligent power module 10 includes an insulating rubber block 100, a ceramic substrate 200 and a power device 300, wherein the ceramic substrate 200 includes a ceramic body 210, a soldering copper layer 220 and a heat dissipation copper layer 230, the soldering copper layer 220 is disposed on one side of the ceramic body 210, and the soldering copper layer 220 and the ceramic body 210 are both located in the insulating paste block 100, the heat dissipation copper layer 230 is disposed on the other side surface of the ceramic body 210, the heat-dissipating copper layer 230 is partially disposed in the insulating rubber block 100, the power assembly 300 includes a power chip 310, an IC chip 320, a power pin 330, a control pin 340 and a metal bonding wire 350, the power chip 310 and the IC chip 320 are disposed on the solder copper layer 220 at intervals, the power pin 330 is disposed on the solder copper layer 220, and the power pin 330 is partially located outside the insulating rubber block 100, the control pin 340 is partially accommodated in the insulating rubber block 100, and the metal bonding wire 350 is respectively connected with the control pin 340 and the soldering copper layer 220.
It should be noted that the ceramic substrate 200 and the power component 300 are located inside the insulating rubber block 100, specifically, the ceramic substrate 200 is a three-layer structure, that is, the middle layer is a ceramic body 210, a welding copper layer 220 is located on one side surface of the ceramic body 210, and a heat dissipation copper layer 230 is located on the other side surface of the ceramic body 210, where the welding copper layer 220, the ceramic body 210, and the heat dissipation copper layer 230 are integrally formed, and it should be noted that the welding copper layer 220 and the ceramic body 210 are both located inside the insulating rubber block 100, and the heat dissipation copper layer 230 is partially located inside the insulating rubber block 100, for example, the side surface of the heat dissipation copper layer 230 away from the ceramic body 210 is located outside the insulating rubber block 100; further, the power chip 310 is disposed on the solder copper layer 220, for example, the power chip 310 may be soldered on the solder copper layer 220, wherein the power chip 310 may be a combination of an IGBT chip and an FRD chip, and the IGBT chip and the FRD chip are respectively included on the solder copper layer 220, it should be noted that a plurality of copper lines are disposed on the solder copper layer 220, and then the power chip 310 is soldered on the copper lines, further, the IC chip 320 is also soldered on the copper lines of the solder copper layer 220, it should be noted that the copper lines soldered on the IC chip 320 are not consistent with the copper lines of the power chip 310, and a space is disposed between the IC chip 320 and the power chip 310; furthermore, one end of the power pin 330 is welded on the welding copper layer 220, the other end of the power pin 330 is located outside the insulating rubber block 100, the control pin 340 is partially accommodated in the insulating rubber block 100, and then the control pin 340 is connected with the welding copper layer 220 by using a metal bonding wire 350; in an embodiment, the insulating rubber block 100 is an epoxy resin insulating rubber block, for example, after the ceramic substrate 200 and the power device 300 are assembled, the ceramic substrate 200 and the power device 300 may be coated with epoxy resin by an injection molding method, so as to realize an integrated molding structure of the insulating rubber block 100, the ceramic substrate 200 and the power device 300, thereby preventing external water vapor and the like from damaging the ceramic substrate 200 and the power device 300, and improving protection strength.
The effect of the high heat dissipation intelligent power module 10 of the present application is explained below, the IC chip 320 is directly welded on the welding copper layer 220, instead of the conventional IC chip being welded on the PCB, and then the PCB is connected to the welding copper layer 220, so that the heat generated on the IC chip 320 can be directly conducted to the ceramic body 210 because the IC chip 320 is directly connected to the welding copper layer 220, and further dissipated to the outside air through the heat dissipation copper layer 230, and the heat conduction efficiency is improved, so the heat dissipation effect of the high heat dissipation intelligent power module 10 of the present application is better; further, since the control pin 340 is connected to the solder copper layer 220 by the metal bonding wire 350, the use of PCB as a transfer connector is eliminated, so that the problem of solder detachment of the control pin due to reflow soldering can be avoided; furthermore, the PCB is omitted as the transfer board, so that the investment of the PCB can be reduced, the cost is saved to a certain extent, and in addition, the PCB is omitted during assembly, the assembly procedures can be reduced, and the assembly efficiency is improved.
Referring to fig. 1 and fig. 2 again, in one embodiment, in order to make the size of the high heat dissipation intelligent power module 10 more compact, the side of the heat dissipation copper layer 230 away from the ceramic body 210 coincides with the outer sidewall of the insulating rubber block 110.
It should be noted that the heat dissipation copper layer 230 is partially located inside the insulating rubber block 100, that is, the heat dissipation copper layer 230 is partially located outside the insulating rubber block 100, so that the side of the heat dissipation copper layer 230 away from the ceramic body 210 coincides with the outer sidewall of the insulating rubber block 100, and the heat dissipation copper layer 230 can be flush with the insulating rubber block 100 while the heat dissipation effect is not affected, so that the appearance is better.
Referring again to fig. 2, in one embodiment, the thickness D of the heat-dissipating copper layer 230 is greater than the thickness E of the soldering copper layer 220. It should be noted that, in order to improve the heat dissipation effect of the heat dissipation copper layer 230, the thickness D of the heat dissipation copper layer 230 is set to be greater than the thickness E of the soldering copper layer 220, so that heat can be better conducted on the heat dissipation copper layer 230, thereby improving the heat dissipation effect; in one embodiment, the thickness D of the heat-dissipating copper layer 230 is 0.4mm to 0.8mm, for example, the thickness of the heat-dissipating copper layer 230 may also be 0.5mm, or 0.6mm, or 0.7 mm.
Referring to fig. 2 and fig. 3, in one embodiment, a fixing step 341 is disposed on an end of the control pin 340 located in the insulating rubber block 100, and the fixing step 341 is connected to the metal bonding wire 350.
It should be noted that, a fixing step 341 is provided at an end of the control lead 340, then the metal bonding wire 350 is connected to the fixing step 341, and by providing the fixing step 341, the metal bonding wire 350 can be better connected to the control lead 340.
Referring to fig. 2 again, in an embodiment, the power pin 330 includes a welding rod 331, an extending rod 332, and a supporting rod 333, wherein a portion of the extending rod 332 is accommodated in the insulating rubber block 100, one end of the welding rod 331 is connected to the extending rod 332, the other end of the welding rod 331 is welded to the welding copper layer 220, and the supporting rod 333 is connected to the extending rod 332.
It should be noted that the power pin 330 is provided with three connecting structures of the welding rod 331, the extending rod 332 and the support rod 333, and the connecting positions of the welding rod 331, the extending rod 332 and the support rod 333 are all provided with a bending structure, so that the high-heat-dissipation intelligent power module 10 has certain deformation resilience, and thus, when the power pin 330 is placed on a welding spot on a circuit board for welding, the power pin can be automatically restored even if a certain pressing force is applied, and no violent collision occurs between the power pin 330 and the welding spot on the circuit board, so that the power pin 330 can be effectively protected; in one embodiment, the welding rod 331, the extending rod 332, and the supporting rod 333 are integrally formed, that is, the welding rod 331, the extending rod 332, and the supporting rod 333 are integrally formed by copper pins, and the power pin 330 is bent into three sections of structures, namely, the welding rod 331, the extending rod 332, and the supporting rod 333 through bending operation.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (9)
1. A high heat dissipation intelligent power module, comprising:
an insulating rubber block;
the ceramic substrate comprises a ceramic body, a welding copper layer and a heat dissipation copper layer, wherein the welding copper layer is arranged on one side surface of the ceramic body, the welding copper layer and the ceramic body are both positioned in the insulating rubber block, the heat dissipation copper layer is arranged on the other side surface of the ceramic body, and part of the heat dissipation copper layer is positioned in the insulating rubber block;
the power assembly comprises a power chip, an IC chip, a power pin, a control pin and a metal bonding wire, wherein the power chip and the IC chip are arranged on the welding copper layer at intervals, the power pin is arranged on the welding copper layer, the power pin is partially positioned in the insulating rubber block, the control pin is partially accommodated outside the insulating rubber block, and the metal bonding wire is respectively connected with the control pin and the welding copper layer.
2. The high thermal dissipation smart power module of claim 1, wherein a side of the heat copper layer away from the ceramic body coincides with an outer sidewall of the dielectric block.
3. The high heat dissipation smart power module of claim 1 or 2, wherein the thickness of the heat dissipation copper layer is greater than the thickness of the solder copper layer.
4. The high heat dissipation intelligent power module of claim 3, wherein the thickness of the heat dissipation copper layer is 0.4mm to 0.8 mm.
5. The high heat dissipation intelligent power module of claim 1, wherein the insulating glue block is an epoxy resin insulating glue block.
6. The high heat dissipation intelligent power module of claim 1, wherein a fixing step is disposed on an end of the control pin located in the insulating glue block, and the fixing step is connected with the metal bonding wire.
7. The high heat dissipation intelligent power module of claim 1, wherein the power chip and the IC chip are respectively soldered on the solder copper layer.
8. The high heat dissipation intelligent power module of claim 1, wherein the power pins comprise a welding rod, an extension rod and a support rod, the extension rod is accommodated in the insulating rubber block, one end of the welding rod is connected with the extension rod, the other end of the welding rod is welded on the welding copper layer, and the support rod is connected with the extension rod.
9. The high heat dissipation intelligent power module of claim 8, wherein the welding rod, the extension rod and the support rod are of an integrally formed structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120671462.1U CN214848606U (en) | 2021-04-01 | 2021-04-01 | High heat dissipation intelligent power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120671462.1U CN214848606U (en) | 2021-04-01 | 2021-04-01 | High heat dissipation intelligent power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214848606U true CN214848606U (en) | 2021-11-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120671462.1U Active CN214848606U (en) | 2021-04-01 | 2021-04-01 | High heat dissipation intelligent power module |
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| CN (1) | CN214848606U (en) |
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2021
- 2021-04-01 CN CN202120671462.1U patent/CN214848606U/en active Active
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220718 Address after: 516006 building 4, aerospace science and Technology Industrial Park, No. 252, Zhongkai Avenue (Huihuan section), Zhongkai high tech Zone, Huizhou City, Guangdong Province Patentee after: Zhihao Microelectronics (Huizhou) Co.,Ltd. Address before: 516006 Building 8, aerospace science and Technology Industrial Park, 252 Zhongkai Avenue, Zhongkai high tech Zone, Huizhou City, Guangdong Province Patentee before: CONHUI (HUIZHOU) SEMICONDUCTOR Co.,Ltd. |
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| TR01 | Transfer of patent right |