CN214797429U - Solar cell and photovoltaic module thereof - Google Patents
Solar cell and photovoltaic module thereof Download PDFInfo
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- CN214797429U CN214797429U CN202120404100.6U CN202120404100U CN214797429U CN 214797429 U CN214797429 U CN 214797429U CN 202120404100 U CN202120404100 U CN 202120404100U CN 214797429 U CN214797429 U CN 214797429U
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Abstract
An embodiment of the utility model provides a solar cell and photovoltaic module thereof, include: the device comprises an N-type substrate and a P-type emitter positioned on the front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer are sequentially arranged on the front surface of the substrate and in a direction away from the P-type emitter, wherein the first passivation layer comprises a first silicon oxynitride material, the second passivation layer comprises a first silicon nitride material, the third passivation layer comprises a second silicon oxynitride material, and the thickness of the first passivation layer is 8 nm-20 nm in a direction perpendicular to the surface of the substrate; a passivation contact structure on the rear surface of the substrate. The embodiment of the utility model provides a be favorable to improving solar cell's performance.
Description
Technical Field
The embodiment of the utility model provides a relate to the semiconductor field, in particular to solar cell and photovoltaic module thereof.
Background
The recombination of the battery interface is a key factor for inhibiting the improvement of the battery efficiency. At present, a layer of silicon nitride film is grown on the surface of a silicon wafer by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) method for passivating a crystalline silicon solar cell in the industry, and the optimal interface passivation effect and optical antireflection effect are obtained by adjusting the refractive index of a plurality of layers of silicon nitride films. However, the passivation material has high fixed positive charge, can be applied to the surface of a phosphorus diffusion layer and a non-diffusion surface of a P-type battery only, and cannot be applied to surface passivation of a boron diffusion layer of an N-type battery.
In order to solve the problem, an alumina film material with fixed negative charges is introduced in the industry, and when alumina is deposited on the surface of a phosphorus diffusion layer of a P-type battery, enough fixed negative charges can be provided to passivate the defects of the battery interface, so that the passivation effect of the battery is improved. However, the deposition of the alumina film on the boron diffusion layer of the N-type silicon wafer will bring higher interface state defect density, weaken the field passivation effect of alumina, and improve the passivation effect only by the processes of electric annealing and the like. Therefore, the equipment and annealing process required for depositing the aluminum oxide film undoubtedly increase the equipment cost and process duration of the N-type cell preparation, and adversely affect the cell yield management and control. Therefore, it is desirable to develop a new N-type cell that is not an alumina passivation system and maintains high efficiency to replace the N-type cell of the alumina passivation system.
SUMMERY OF THE UTILITY MODEL
An embodiment of the utility model provides a solar cell and photovoltaic module thereof, solar cell adopt non-aluminium oxide passivation system, and keep high efficiency simultaneously.
In order to solve the above problem, an embodiment of the present invention provides a solar cell, including: the device comprises an N-type substrate and a P-type emitter positioned on the front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer are sequentially arranged on the front surface of the substrate and in a direction away from the P-type emitter, wherein the first passivation layer comprises a first silicon oxynitride material, the second passivation layer comprises a first silicon nitride material, the third passivation layer comprises a second silicon oxynitride material, and the thickness of the first passivation layer is 8 nm-20 nm in a direction perpendicular to the surface of the substrate; a passivation contact structure on the rear surface of the substrate.
In addition, the first refractive index of the first passivation layer is 1.61-1.71.
In addition, the first refractive index of the first passivation layer is greater than the third refractive index of the third passivation layer, and the third refractive index of the third passivation layer is 1.56-1.61.
In addition, the thickness of the third passivation layer is not more than 50nm in a direction perpendicular to the substrate surface.
In addition, the thickness of the third passivation layer is 10nm to 20nm in a direction perpendicular to the substrate surface.
In addition, the second refractive index of the second passivation layer is greater than the third refractive index of the third passivation layer and the first refractive index of the first passivation layer.
In addition, the second refractive index is 1.98-2.2.
In addition, the thickness of the second passivation layer is 40nm to 60nm in a direction perpendicular to the substrate.
In addition, still include: and the fourth passivation layer comprises a second silicon nitride material, covers the surface of the passivation contact structure, which is far away from the substrate, has a refractive index of 2.04-2.2, and has a thickness of 60-100 nm in a direction perpendicular to the rear surface of the substrate.
Correspondingly, the embodiment of the utility model provides a still provide a photovoltaic module, include above-mentioned arbitrary solar cell.
Compared with the prior art, the embodiment of the utility model provides a technical scheme has following advantage:
in the technical scheme, the silicon oxynitride with weaker electropositivity than silicon nitride is used as the buffer layer, and the thickness of the first passivation layer is reasonably set, so that the influence of the second passivation layer with strong electropositivity on the P-type emitter can be reduced, and the second passivation layer is further applied to the surface of the P-type emitter; meanwhile, compared with aluminum oxide, the properties of silicon oxynitride and the substrate are similar, so that the interface state defect density and the stress damage of the P-type emitter are reduced, the carrier recombination rate of the front surface of the substrate is reduced, and the photoelectric conversion efficiency of the solar cell is improved; furthermore, the first passivation layer with positive electricity can repel the transferred positive ions, so that the positive ions are prevented from being transferred to the surface of the substrate, the PID phenomenon of the solar cell is favorably inhibited, and the performance of the module is improved.
In addition, the refractive index of the first passivation layer is reasonably set, so that the utilization efficiency of incident light rays is improved, and the photoelectric conversion efficiency of the solar cell is improved; the selection range of materials of the third passivation layer is favorably expanded so as to meet the flexibility that the third refractive index of the third passivation layer can be adjusted within a certain range.
Drawings
One or more embodiments are illustrated by corresponding figures in the drawings, which are not to scale unless specifically noted.
Fig. 1 is a solar cell provided in an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that in the embodiments of the present invention, numerous technical details are set forth in order to provide a better understanding of the present application. However, the technical solution claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments.
Referring to fig. 1, the solar cell includes: an N-type substrate 100 and a P-type emitter 111 on a front surface of the substrate 100; a first passivation layer 112, a second passivation layer 113 and a third passivation layer 114 are sequentially arranged on the front surface of the substrate 100 and in a direction away from the P-type emitter 111, wherein the first passivation layer 112 comprises a first silicon oxynitride material, the second passivation layer 113 comprises a first silicon nitride material, the third passivation layer 114 comprises a second silicon oxynitride material, and the thickness of the first passivation layer 112 is 8nm to 20nm in a direction perpendicular to the surface of the substrate 100; a passivation contact structure 125 on the rear surface of the substrate 100.
Wherein, the 8 nm-20 nm can be 12nm, 15nm or 18 nm.
In some embodiments, the substrate 100 is a silicon substrate, the resistivity of the substrate 100 ranges from 0.1 to 10 ohm-cm, preferably from 0.3 to 2 ohm-cm, and the preferred resistivity value is adopted, which is beneficial to improving the photoelectric conversion efficiency of the solar cell; the front surface of the substrate 100 is the surface of the substrate 100 facing the sunlight, the back surface of the substrate 100 is the surface of the substrate 100 facing away from the sunlight, the P-type emitter 111 is located in at least part of the surface layer space of the substrate 100 facing the sunlight, the diffusion sheet resistance range of the P-type emitter 111 can be set to be 110 omega-140 omega, and the surface diffusion concentration can be set to be E19-E20/cm3。
The silicon substrate is made of monocrystalline silicon, polycrystalline silicon, amorphous silicon and microcrystalline silicon; in other embodiments, the material of the substrate may also be elemental carbon, an organic material, and a multi-component compound, including gallium arsenide, cadmium telluride, copper indium selenide, and the like.
In some embodiments, the material of the first passivation layer 112 includes a first silicon oxynitride material, and since the first passivation layer 112 and the substrate 100 both include silicon elements, the material characteristics of the first passivation layer 112 are similar to the material characteristics of the substrate 100, and the first silicon oxynitride material is used as the material of the first passivation layer 112, which is beneficial to reducing the interface state defect density between the P-type emitter 111 and the first passivation layer 112, improving the transmission efficiency of the photo-generated carriers, and reducing the stress applied to the substrate 100 by the first passivation layer 112, thereby avoiding the substrate 100 from being damaged by the stress, and ensuring that the solar cell has higher photoelectric conversion efficiency.
Because of the requirement of the forbidden band width of the material, the material of the substrate 100 is generally a semiconductor material or a material with material characteristics similar to those of the semiconductor material, and when a metal compound (e.g., aluminum oxide) is selected as the material of the first passivation layer 112, the first passivation layer 112 is prone to apply a large stress to the substrate 100 and even cause stress damage due to a large difference between the material characteristics of the first passivation layer 112 and the material characteristics of the substrate 100, which is not favorable for the generation and transmission of photo-generated carriers and is not favorable for further improving the photoelectric conversion efficiency of the solar cell.
In some embodiments, the first passivation layer 112 includes silicon oxynitride having a weaker positive electrical property than silicon nitride to adapt to the P-type emitter 111 on the surface of the N-type substrate 100 (for example, the P-type emitter 111 formed by boron diffusion), and the formed first passivation layer 112 can be used to block positive ions migrating from the device packaging material, so as to prevent the positive ions from migrating to the surface of the substrate 100, thereby suppressing the PID phenomenon of the solar cell and improving the performance of the photovoltaic device; meanwhile, since the first passivation layer 112 has a weak positive electric property, the first passivation layer 112 has a small influence on the field passivation effect of the second passivation layer 113, and the first passivation layer 112 has a good energy band bending effect, which is beneficial to reducing the recombination rate of carriers on the front surface of the substrate 100, thereby improving the photoelectric conversion efficiency.
When the edges of the photovoltaic module are affected by moisture, a large amount of free-moving Na is generated in the glass interior of the packaging material of the photovoltaic module+And sodium ions migrate through the encapsulant to the surface of the solar cell. When aluminum oxide is used as the material of the first passivation layer 112, since the polarity of the charge carried by the aluminum oxide is opposite to the polarity of the sodium ions, further migration of the sodium ions cannot be blocked, and therefore, the sodium ions can further migrate to the surface of the substrate 100 to damage the PN junction, thereby causing power attenuation and reduction of photoelectric conversion efficiency of the solar cell; and a silicon oxynitride material (including a first silicon oxynitride material) with weak electropositivity is adopted as the first passivation layer 112, and the first passivation layer 112 has electropositivity as a whole, so that the migration of sodium ions can be blocked by using the principle of like-pole repulsion, the sodium ions are prevented from being gathered on the surface of the substrate 100, the passivation effect of the first passivation layer 112 and the second passivation layer 113 is ensured, and the photoelectric conversion efficiency of the solar cell is improved.
The parameters of the first passivation layer 112 may include a first refractive index and a thickness. The thickness of the first passivation layer 112 is related to the amount of positive charge carried by the first passivation layer 112, the thicker the thickness, the greater the amount of positive charge carried; and the thicker the thickness is, the greater the stress is, and the higher the interface state defect density between the first passivation layer 112 and the substrate 100 is, in relation to the stress applied to the substrate 100 by the first passivation layer 112; in addition, it is related to the incident light utilization rate of the first passivation layer 112 at the front surface of the cell, i.e., the thicker the thickness, the lower the incident light utilization rate.
In some embodiments, the first passivation layer 112 has a relatively high first refractive index, which is beneficial to improve the utilization efficiency of incident light, thereby improving the photoelectric conversion efficiency of the solar cell; the selection range of the material of the third passivation layer 114 is further expanded, so that the flexibility that the third refractive index of the third passivation layer 114 is adjustable within a certain range is met, and the photoelectric conversion efficiency is further improved. Wherein the first refractive index is 1.61-1.71, such as 1.63, 1.66 or 1.69.
In addition, the thickness of the first passivation layer 112 is reasonably set, so that the excessive number of positive charges in the first passivation layer 112 is avoided, and the first passivation layer 112 is ensured to have a good energy band bending effect on the P-type emitter; in addition, the method is beneficial to avoiding the too small number of positive charges in the first passivation layer 112, and ensuring that the first passivation layer 112 has good repulsion on the immigrated positive ions, thereby inhibiting the PID phenomenon; meanwhile, the utilization rate of front incident light is increased, and the short-circuit current of the solar cell is improved; furthermore, the stress between the first passivation layer 112 and the substrate 100 is favorably controlled within a reasonable range, so that the effective combination between the first passivation layer 112 and the substrate 100 is ensured, the stress damage and the interface state defect density of the substrate 100 are reduced, the carrier generation and transmission efficiency is favorably improved, and the photoelectric conversion efficiency of the solar cell is improved.
In some embodiments, the first passivation layer 112 may be composed of a plurality of silicon oxynitride layers, the refractive index of the first passivation layer 112 refers to the overall refractive index of the plurality of silicon oxynitride layers, and the refractive index of the plurality of silicon oxynitride layers may be increased in a direction toward the substrate 100 from the first passivation layer 112, so as to improve the utilization efficiency of incident light and thus improve the photoelectric conversion efficiency of the solar cell.
In some embodiments, the second passivation layer 113 is composed of a first silicon nitride material. A silicon nitride material with stronger positive electricity compared with a silicon oxynitride material is used as the second passivation layer 113, so that the second passivation layer 113 has a good hydrogen passivation effect, the second passivation layer is diffused to the front surface of the substrate 100 to reduce the carrier recombination rate, and the photoelectric conversion efficiency of the solar cell is improved; meanwhile, the second passivation layer 113 is controlled to have a higher refractive index, reflection and emergence of light rays are reduced, absorption of visible light is enhanced, and preparation of a black or dark blue solar cell is facilitated, so that the requirement of a black component is met.
The parameters of the second passivation layer 113 may include a second refractive index and a thickness. The thickness of the second passivation layer 113 is related to the hydrogen passivation effect of the second passivation layer 113, which affects the conversion efficiency of the solar cell; the thickness of the second passivation layer 113 is also related to the cost of the solar cell, the thicker the thickness, the higher the cost. Note that the photoelectric conversion efficiency has an upper limit value, and when the reflection amount and the emission amount of the incident light approach the minimum values, the thickness continues to increase less significantly.
In some embodiments, the second refractive index is greater than the first and third refractive indices, thereby ensuring that the first and second passivation layers 112 and 113 as a whole have a higher refractive index relative to the third passivation layer 114, thereby reducing reflection and emission of light. Specifically, the second refractive index may be 1.98 to 2.2, for example 2.05, 2.1 or 2.15.
In some embodiments, the thickness of the second passivation layer 113 is 40nm to 60nm, for example, 45nm, 50nm, or 55nm, in a direction perpendicular to the N-type substrate 100. The thickness of the second passivation layer 113 is reasonably set, so that the number of positive charges carried by the second passivation layer 113 can meet the requirement of interface hydrogen passivation, and the surface recombination rate of carriers can be reduced; in addition, the packaging size of the solar cell is reduced, and the cost is reduced.
It should be noted that the definition of the refractive index and the thickness of the second passivation layer 113 belongs to the overall definition of the second passivation layer 113, and actually, the second passivation layer 113 may be a single-layer film layer or may be composed of multiple film layers stacked in sequence. Specifically, the second passivation layer 113 may be formed by 2 to 4 sub-film layers, and the refractive index of different sub-film layers increases in a direction of the second passivation layer 113 toward the substrate 100, and the refractive index of each sub-film layer satisfies a limit related to the refractive index of the second passivation layer 113, so that the utilization rate of incident light is further improved.
In some embodiments, the third passivation layer 114 includes a second silicon oxynitride material, and the third refractive index of the third passivation layer 114 is smaller than the second refractive index of the second passivation layer 113, which is beneficial to reduce reflection and emergence of light, enhance absorption of visible light, and facilitate preparation of colors presented by a black or dark blue solar cell panel.
Further, the third refractive index of the third passivation layer 114 is greater than or equal to the first refractive index of the first passivation layer 112, and the solar cell has relatively high photoelectric conversion efficiency; when the third refractive index of the third passivation layer 114 is smaller than the first refractive index of the first passivation layer 112, the reflected light or the emergent light of the third passivation layer 114 can be re-incident into the substrate 100 through the first passivation layer 112, thereby further improving the photoelectric conversion efficiency of the solar cell.
Specifically, the third refractive index can be set to be 1.56-1.87, such as 1.1.61, 1.67 or 1.75, as limited by the refractive index matching of adjacent film layers and the photoelectric conversion efficiency requirement. So, be favorable to solar cell to have higher photoelectric conversion efficiency, for the material that adopts aluminium oxide as first passivation layer 112, the utility model provides a solar cell's short-circuit current Isc can promote 20 ~ 40mA, and then helps promoting solar cell's conversion efficiency.
The ability of the solar cell to absorb light is mainly reflected on the refractive index and thickness of the second passivation layer 113 and the refractive index and thickness of the third passivation layer 114. Since the refractive index and thickness of the second passivation layer 113 and the refractive index of the third passivation layer 114 have been determined, the thickness of the third passivation layer 114 may be set to be not more than 50nm in order to further ensure the solar cell to have high light absorption capability.
The light absorption capability of the solar cell is different according to the thickness of the third passivation layer 114, and the color of the solar cell is also different. In some embodiments, third passivation layer 114 has a first thickness threshold range and a second thickness threshold range, a maximum value of the second thickness threshold range being less than or equal to a minimum value of the first thickness threshold range. When the thickness of the third passivation layer 114 is in the first thickness threshold range, incident light is easy to exit from the edge of the third passivation layer 114, and human eyes can receive more emergent light, so that the surface of the solar cell can be bright blue in a visible light state; when the thickness of the third passivation layer 114 is in the second thickness threshold range, the incident light enters the substrate 100 more, and the surface of the solar cell in the visible light state exhibits dark blue close to black, even appears black, and the dark blue or black solar cell can meet the requirement of a black component.
Wherein the first thickness threshold range is 20nm to 50nm, such as 30nm, 37nm or 45nm, and the second thickness threshold range is 10nm to 20nm, such as 13nm, 15nm or 17 nm.
In some embodiments, the passivation contact structure 125 includes at least: an interface passivation layer 121 and a field passivation layer 122 sequentially disposed in a direction away from the substrate 100. The interface passivation layer 121 is made of a dielectric material and is used for implementing interface passivation on the back surface of the substrate 100, for example, the interface passivation layer 121 is a tunnel oxide layer (e.g., a silicon oxide layer). The material of the field passivation layer 122 is a material that achieves a field passivation effect, such as a doped silicon layer, which may specifically be one or more of a doped polysilicon layer, a doped microcrystalline silicon layer, or a doped amorphous silicon layer. For an N-type silicon substrate 100, the field passivation layer 122 may be an N-type doped polysilicon layer.
In some embodiments, a fourth passivation layer 123 is further disposed on the surface of the field passivation layer 122 facing away from the substrate 100. The material of the fourth passivation layer 123 includes a material that realizes an anti-reflection function, for example, a second silicon nitride material.
Further, the refractive index of the fourth passivation layer 123 may be defined to be in a range of 2.04 to 2.2, such as 2.08, 2.12, or 2.16, and the thickness of the fourth passivation layer 123 in a direction perpendicular to the rear surface of the substrate 100 may be set to be in a range of 60nm to 100nm, such as 70nm, 80nm, or 90 nm. The fourth passivation layer 123 with the above parameters can better absorb the light on the rear surface, which is beneficial to ensuring that the rear surface of the substrate 100 has a higher light utilization rate.
In some embodiments, the fourth passivation layer 123 may be a plurality of sub-film layers similar to the second passivation layer 113, that is, the refractive index of different sub-film layers gradually increases in a direction of the fourth passivation layer 123 toward the substrate 100, and each sub-film layer is limited by the overall refractive index of the fourth passivation layer 123.
In addition, the solar cell further includes a first electrode 115 and a second electrode 124, the first electrode 115 is electrically connected to the P-type emitter 111, and the second electrode 124 is electrically connected to the field passivation layer 122 through the fourth passivation layer 123. In some embodiments, the first electrode 115 and/or the second electrode 124 may be formed by sintering and printing a conductive paste (silver paste, aluminum paste, or silver-aluminum paste).
In some embodiments, silicon oxynitride with weaker electropositivity than silicon nitride is used as a buffer layer, and the thickness of the first passivation layer is reasonably set, so that the influence of the second passivation layer with strong electropositivity on the P-type emitter is favorably reduced, and the second passivation layer with weaker electropositivity is further applied to the surface of the P-type emitter; meanwhile, compared with aluminum oxide, the properties of silicon oxynitride and the substrate are similar, so that the interface state defect density and the stress damage of the P-type emitter are reduced, the carrier recombination rate of the front surface of the substrate is reduced, and the photoelectric conversion efficiency of the solar cell is improved; furthermore, the first passivation layer with positive electricity can repel the transferred positive ions, so that the positive ions are prevented from being transferred to the surface of the substrate, the PID phenomenon of the solar cell is favorably inhibited, and the performance of the module is improved.
Correspondingly, the embodiment of the utility model provides a still provide a photovoltaic module, including above-mentioned arbitrary solar cell. The photovoltaic module comprising the solar cell has high photoelectric conversion efficiency, can effectively inhibit the PID phenomenon of the solar cell, and has high module performance.
It will be understood by those skilled in the art that the foregoing embodiments are specific examples of the invention, and that various changes in form and details may be made therein without departing from the spirit and scope of the invention in its practical application. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A solar cell, comprising:
the device comprises an N-type substrate and a P-type emitter positioned on the front surface of the substrate;
a first passivation layer, a second passivation layer and a third passivation layer are sequentially arranged on the front surface of the substrate and in a direction away from the P-type emitter, wherein the first passivation layer comprises a first silicon oxynitride material, the second passivation layer comprises a first silicon nitride material, the third passivation layer comprises a second silicon oxynitride material, and the thickness of the first passivation layer is 8 nm-20 nm in a direction perpendicular to the surface of the substrate; a passivation contact structure on the rear surface of the substrate.
2. The solar cell of claim 1, wherein the first passivation layer has a first refractive index of 1.61-1.71.
3. The solar cell of claim 1 or 2, wherein the first refractive index of the first passivation layer is greater than the third refractive index of the third passivation layer, and the third refractive index of the third passivation layer is 1.56-1.61.
4. The solar cell of claim 1, wherein the thickness of the third passivation layer is no greater than 50nm in a direction perpendicular to the substrate surface.
5. The solar cell according to claim 4, wherein the thickness of the third passivation layer is 10nm to 20nm in a direction perpendicular to the substrate surface.
6. The solar cell of claim 1, wherein the second refractive index of the second passivation layer is greater than the third refractive index of the third passivation layer and the first refractive index of the first passivation layer.
7. The solar cell of claim 6, wherein the second refractive index is 1.98-2.2.
8. The solar cell of claim 6, wherein the thickness of the second passivation layer is 40nm to 60nm in a direction perpendicular to the substrate.
9. The solar cell of claim 1, further comprising: and the fourth passivation layer comprises a second silicon nitride material, covers the surface of the passivation contact structure, which is far away from the substrate, has a refractive index of 2.04-2.2, and has a thickness of 60-100 nm in a direction perpendicular to the rear surface of the substrate.
10. A photovoltaic module comprising a solar cell according to any one of claims 1 to 9.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114420770A (en) * | 2022-03-30 | 2022-04-29 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module thereof |
| CN114975642A (en) * | 2022-01-28 | 2022-08-30 | 浙江晶科能源有限公司 | Photovoltaic cell and photovoltaic module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114975642A (en) * | 2022-01-28 | 2022-08-30 | 浙江晶科能源有限公司 | Photovoltaic cell and photovoltaic module |
| CN114975642B (en) * | 2022-01-28 | 2024-02-27 | 浙江晶科能源有限公司 | Photovoltaic cell and photovoltaic module |
| CN114420770A (en) * | 2022-03-30 | 2022-04-29 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module thereof |
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