CN214751320U

CN214751320U - Lithographic system

Info

Publication number: CN214751320U
Application number: CN202120038045.3U
Authority: CN
Inventors: 陈国军; 吴景舟; 马迪
Original assignee: Jiangsu Desheng Intelligent Technology Co ltd
Current assignee: Jiangsu Desheng Intelligent Technology Co ltd
Priority date: 2021-01-07
Filing date: 2021-01-07
Publication date: 2021-11-16
Anticipated expiration: 2031-01-07

Abstract

The utility model discloses a photoetching system relates to photoetching technical field, photoetching system includes: the digital micromirror device DMD is arranged on the machine table, the workbench is used for arranging a photoetching object, and an angle between a plane where the DMD is arranged and a plane where the photoetching object is arranged is a preset angle gamma. The problem that the DMD with different parameters needs to be replaced when the definition needs to be changed in the existing scheme is solved, and the effect of conveniently and quickly adjusting the definition by adjusting the angle between the plane where the DMD is located and the plane where the photoetching object is located is achieved.

Description

Lithographic system

Technical Field

The utility model relates to a lithography technology field especially relates to lithography system.

Background

Photolithography refers to a technique of printing a pattern on a photosensitive recording material by an optical replication method and then transferring the pattern onto a wafer by etching to fabricate an electronic circuit.

The DMD (Digital Micromirror Device) maskless lithography technology is a new technology derived from the traditional optical lithography technology, because the exposure imaging mode is basically similar to the traditional projection lithography, the difference is that the traditional mask is replaced by the Digital DMD, the main principle is that the required lithography pattern is input into a DMD chip through software by a computer, the rotation angle of a DMD chip Micromirror is changed according to the distribution of black and white pixels in the image, a light image consistent with the required pattern is formed and projected onto the surface of a substrate by irradiating the DMD chip through a collimated light source, and the preparation of a large-area microstructure is realized by controlling the movement of a sample stage. Compared with the traditional photoetching equipment, the DMD maskless photoetching machine does not need a mask, so that the production cost and the production period are saved.

However, in the existing solution, in order to increase the scanning definition of the DMD, each micromirror in the DMD is usually arranged in a staggered manner, however, in the solution, if the definition needs to be changed, only the DMDs with different parameters can be replaced, which is costly.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a lithography system, and then need change the higher problem of cost is changed to the DMD of different parameters when needs change definition among the solution current scheme.

The purpose of the utility model is realized by adopting the following technical scheme:

in a first aspect, there is provided a lithography system, comprising: the digital micromirror device DMD is arranged on the machine table, the workbench is used for arranging a photoetching object, and an angle between a plane where the DMD is arranged and a plane where the photoetching object is arranged is a preset angle gamma.

The angle between the plane where the DMD is located and the plane where the photoetching object is located is set to be the preset angle, the problem that the cost of the DMD with different parameters is high when the definition needs to be changed in the existing scheme is solved, and the effect of conveniently and quickly adjusting the definition by adjusting the angle between the plane where the DMD is located and the plane where the photoetching object is located is achieved.

Optionally, the DMD includes a plurality of micromirrors, each of which is rectangular, and the length of a first side of the micromirror is denoted as m, the length of a second side of the micromirror is denoted as n, a target length is denoted as p, and the preset angle γ is determined by m, n, and p.

Optionally, the DMD includes k DMDs stacked in the height direction, where k is an integer greater than 1.

The scanning precision of the DMD in the scanning process is achieved by overlapping and arranging the k DMDs in the height direction.

Optionally, k is 2.

Optionally, the DMD and the object to be lithographed move relatively in a first direction and a second direction.

Through controlling DMD and by photoetching object relative motion in first direction and second direction, avoided in the current scheme need change the higher problem of DMD cost of different parameters when the definition has been changed, reached can be through adjusting the velocity of motion main part and then convenient and fast's realization definition adjustment's effect.

Optionally, the DMD is fixedly arranged on the machine platform;

the machine table moves in the first direction and the second direction simultaneously; alternatively, the first and second electrodes may be,

the table moves in the first direction and the second direction simultaneously; alternatively, the first and second electrodes may be,

the machine table moves in the first direction while the workbench moves in the second direction; alternatively, the first and second electrodes may be,

the machine table moves in the second direction while the work table moves in the first direction.

Relative motion of the DMD and the photoetching object in the first direction and the second direction is achieved through the multiple control modes, appropriate selection according to different application scenes is achieved, flexibility of actual scanning is improved, and the application range is expanded.

Optionally, the DMD is non-fixedly arranged on the machine platform;

the stage moves in the first direction while the DMD moves in the second direction; alternatively, the first and second electrodes may be,

the stage moves in the second direction while the DMD moves in the first direction.

Optionally, the DMD is non-fixedly arranged on the machine platform;

the table moves in the first direction while the DMD moves in the second direction; alternatively, the first and second electrodes may be,

the table moves in the second direction while the DMD moves in the first direction.

Optionally, the DMD includes a plurality of micromirrors, each of which is rectangular, a length of a first side of the micromirror is denoted as m, a length of a second side of the micromirror is denoted as n, and a target length is denoted as p, and an acute included angle θ formed by a relative movement direction between the DMD and the object to be lithographed and the first direction is determined by m, n, p, and γ.

Through calculating theta, the motion main body is further controlled to move according to the theta obtained through calculation, and the effect of accurately controlling the definition of DMD scanning is achieved.

Drawings

The present invention will be further explained with reference to the drawings and examples.

FIG. 1 is a system diagram of a lithography system provided by an embodiment of the present application;

FIG. 2 is a schematic perspective view of a lithography system according to an embodiment of the present application;

fig. 3 is a schematic structural diagram of a DMD provided in an embodiment of the present application;

FIG. 4 is a schematic scanning diagram of a lithography system according to an embodiment of the present application during scanning;

FIG. 5 is another schematic scanning diagram of a lithography system according to an embodiment of the present application during scanning.

Detailed Description

The present invention will be further described with reference to the accompanying drawings and the detailed description, and it should be noted that the embodiments or technical features described below can be arbitrarily combined to form a new embodiment without conflict.

Referring to fig. 1, the photolithography system provided by the present application includes a stage 11, a table 12, and a DMD13, the DMD13 is disposed on the stage 11, and the table 12 is used for disposing the object 100 to be lithographed. Both the machine table 11 and the workbench 12 can be controlled by the mechanical arm to move, and the DMD13 can be moved along with the machine table 11 by controlling the movement of the machine table 11, and similarly, the movement of the object 100 to be etched can be correspondingly realized by controlling the movement of the workbench 12. In practice, the DMD13 on the machine base 11 may be directly controlled by the robot arm to realize the movement, and similarly, the object 100 to be etched may be directly connected to the robot arm, and the movement of the object 100 to be etched may be realized by controlling the movement of the robot arm.

Optionally, as shown in fig. 1, other devices may be further included in the lithography system, such as a DMD controller 14, a stage controller 15, and an image generator 16. Wherein, the light emitted by the light source is processed by the DMD13 and then is sent to the photoetching object 100; the DMD controller 14 is used to control the DMD13, and the controlling the DMD13 described herein includes controlling the stage 11 on which the DMD13 is placed, or, when the DMD13 is also movable, the DMD controller 14 is used to control both the stage 11 on which the DMD13 is placed and the DMD 13; similarly, a table controller 15 is used to control the table 12. The image generator 16 is used for generating an image according to the scanning of the DMD13, and after the image is generated, the image may be sent to other devices for processing, which will not be described herein.

Taking the robot controlling the machine 12 as an example of a drag chain 17, please refer to fig. 2, which shows a schematic structural diagram of a possible photolithography system.

In the above lithography system, the angle between the plane where the DMD13 is located and the plane where the object 100 to be lithographed is a preset angle γ. γ is a preset angle, and may be set to different values according to actual requirements, which is not described herein.

The DMD13 includes a plurality of micromirrors 131, each micromirror 131 is rectangular, and the DMD13 composed of the micromirrors 131 is a rectangle with larger size, for example, please refer to fig. 3, which shows a possible structure diagram of the DMD 13. In practical implementation, the number of the micromirrors 131 in the DMD13 may be set according to practical requirements, for example, a 3 × 5 micromirror matrix, or, for example, a 5 × 8 micromirror matrix, and the like, which is not limited in this embodiment.

The length of the first side of the micromirror 131 is denoted as m, the length of the second side of the micromirror 131 is denoted as n, the target length is denoted as p, and the preset angle γ is determined by m, n, and p, and the specific correspondence relationship is not limited in this application.

After the angle between the plane where the DMD13 is located and the plane where the object to be lithographed 100 is located is set to be the preset angle, the angle and the position of the light source can be adjusted according to the practical application requirement, and the embodiment is not limited herein.

In the above embodiment, there may be one DMD13, and k DMDs may also include k DMDs stacked in the height direction, where k is an integer greater than 1. The height direction refers to the arrangement direction of the object 100 to be subjected to lithography and the DMD13, that is, the DMD13 is located above the object 100 to be subjected to lithography, and when the DMD13 includes k, k DMDs 13 may be stacked in the same direction. In general, k is 2, and the width of the overlapped part after the superposition of the 2 DMDs 13 is determined according to the width of each DMD13 and the width of the object 100 to be lithographed, and the width of the superposition may be different according to different application scenarios, which is not limited in this embodiment.

By superimposing k DMDs 13 and further performing scanning by the superimposed DMD13, the scanning accuracy of the DMD13 is improved.

In practice, in the process of the DMD13, the DMD13 scans a strip along the first direction, then the DMD13 steps by one DMD13 dimension along the second direction, continues to scan a strip along the reverse direction of the first direction, and continues to scan after stepping by one DMD13 dimension along the reverse direction of the second direction, and so on, until all the scans are finished. That is, in the present embodiment, the first direction may be a main scanning direction in which the DMD13 scans, the second direction may be a sub-scanning direction in which the DMD13 scans, and the sub-scanning direction may be a direction in which the DMD13 steps. The following description will be given by taking the first direction as the main scanning direction and the second direction as the sub-scanning direction, unless otherwise specified.

In the above embodiments, the DMD13 and the object 100 to be lithographed move relatively in the first direction and the second direction, and the relative movement may include the following possible implementations:

first, when the DMD13 is fixedly installed on the machine 11, the motion method includes:

the machine table 11 moves in the first direction and the second direction simultaneously; alternatively, the first and second electrodes may be,

the table 12 is moved in the first direction and the second direction simultaneously; alternatively, the first and second electrodes may be,

the machine table 11 moves in the first direction while the work table 12 moves in the second direction; alternatively, the first and second electrodes may be,

the machine table 11 moves in the second direction while the work table 12 moves in the first direction.

Second, the DMD13 is provided on the machine base 11 in an unfixed manner, and the relative movement mode includes:

the stage 11 moves in the first direction while the DMD13 moves in the second direction; alternatively, the first and second electrodes may be,

the stage 11 moves in the second direction while the DMD13 moves in the first direction.

Thirdly, the DMD13 is non-fixedly disposed on the machine 11, and the relative movement mode includes:

said table 12 moving in said first direction while said DMD13 moves in said second direction; alternatively, the first and second electrodes may be,

the table 12 moves in the second direction while the DMD13 moves in the first direction.

The above is only exemplified by controlling the motion of the motion body through the above control manner, and in actual implementation, more implementation manners may be included, and the specific motion manner of the motion body is not limited in this embodiment.

In one possible embodiment, an acute included angle θ formed by the first direction and the relative movement direction between DMD13 and the object 100 to be lithographed is determined by m, n, p, and γ. And, after determining θ, determining the moving speed V of the moving body in the first direction₁And a moving speed V of the relative movement in the second direction₂Referring to fig. 4, a possible photolithography scanning method is shown. Determining the resulting V₂/V₁＝tanθ。

In addition, please refer to fig. 5, which shows a scanning schematic diagram of the DMD13 lithography scan after the DMD13 and the object 100 to be lithographed move relatively.

In summary, by providing a lithography system including a stage 11, a table 12 and a digital micromirror device DMD13, the DMD13 is disposed on the stage 11, the table 12 is used for disposing the object 100 to be lithographed, and an angle between a plane of the DMD13 and a plane of the object 100 to be lithographed is a preset angle γ. The problem that the cost of the DMD13 with different parameters is high when the definition needs to be changed in the existing scheme is solved, and the effect of conveniently and quickly realizing definition adjustment by adjusting the angle between the plane where the DMD13 is located and the plane where the photoetching object 100 is located is achieved.

In addition, in practical use, the same lithography effect is achieved, and the configuration of the lithography system may be various, and in this embodiment, the lithography system may further achieve the following functions:

firstly, obtaining evaluation parameters of at least two photoetching configuration schemes, wherein the evaluation parameters comprise at least one of hardware configuration parameters, process cost and working hours;

optionally, the lithography configuration scheme may include a plurality of configuration parameters, and the evaluation parameter of each lithography configuration scheme may be determined according to a correspondence between the configuration parameters and the evaluation parameters. The corresponding relationship between the configuration parameters and the evaluation parameters may be a corresponding relationship preset according to big data.

As another possible implementation manner, the evaluation parameter of each lithography configuration scheme may also be obtained through a neural network, in this case, this step may include:

for each photoetching configuration scheme in the at least two photoetching configuration schemes, inputting configuration parameters of the photoetching configuration scheme into a target neural network, wherein the output of the target neural network is the evaluation parameters of the photoetching configuration scheme, and the target neural network is a network obtained by pre-training according to the configuration parameters of the sample photoetching configuration scheme and the evaluation parameters of each sample photoetching configuration scheme.

Configuration parameters of the lithography configuration scheme may include at least one of a number of DMDs 13, a precision of the DMD13, and a size of the DMD 13.

And secondly, recommending the photoetching configuration according to the evaluation parameters of each photoetching configuration scheme.

After the evaluation parameters of each scheme are obtained, the photoetching configuration recommendation can be carried out according to the evaluation parameters. Optionally, before using the lithography system, the user may set a use requirement of the user, and the lithography system recommends according to the use requirement set by the user. For example, if the definition required by the user is the highest, the lithography configuration scheme with the highest definition can be recommended according to the evaluation parameters of various schemes; for another example, if the required cost is the lowest, the lithography configuration scheme with the lowest cost may be recommended according to the evaluation parameters of various schemes, and details are not described here.

The utility model discloses from the use purpose, in efficiency, point of view such as progress and novelty explains, the practical progressive nature that it was provided has accorded with the function that patent law emphated and has promoted and use the essential element, the above description and the attached drawing of the utility model only do the preferred embodiment of the utility model has, do not limit with this the utility model discloses, consequently, all with the utility model discloses the structure, device, characteristics etc. are similar, identical, all should all be according to the equivalent replacement or the decoration etc. that the patent application scope of the utility model made promptly, all should belong to within the scope of the patent application protection of the utility model.

Claims

1. A lithography system, comprising: the digital micromirror device DMD is arranged on the machine table, the workbench is used for arranging a photoetching object, and an angle between a plane where the DMD is arranged and a plane where the photoetching object is arranged is a preset angle gamma.

2. The lithography system of claim 1, wherein said DMD comprises a plurality of micromirrors, each said micromirror having a rectangular shape, a length of a first side of said micromirror being denoted as m, a length of a second side of said micromirror being denoted as n, a target length being denoted as p, said preset angle γ being determined by said m, said n and said p.

3. Lithography system according to claim 1, wherein the DMD comprises k DMDs arranged one above the other in the height direction, k being an integer larger than 1.

4. The lithography system of claim 3, wherein k-2.

5. The lithography system of claim 1, wherein said DMD and said object to be lithographed move relative to each other in a first direction and a second direction.

6. The lithography system of claim 5, wherein the DMD is fixedly disposed on the stage;

7. The lithography system of claim 5, wherein said DMD is non-fixedly disposed on said stage;

8. The lithography system of claim 5, wherein said DMD is non-fixedly disposed on said stage;

9. The lithography system according to any one of claims 5 to 8, wherein said DMD comprises a plurality of micromirrors, each of said micromirrors is rectangular in shape, a length of a first side of said micromirror is denoted by m, a length of a second side of said micromirror is denoted by n, and a target length is denoted by p, and an acute angle θ formed by a direction of relative motion between said DMD and said object to be lithographed and said first direction is determined by said m, said n, said p, and said γ.