CN214586094U - Silicon-based polarization beam splitting chip based on sub-wavelength grating - Google Patents
Silicon-based polarization beam splitting chip based on sub-wavelength grating Download PDFInfo
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Abstract
The utility model discloses a silica-based polarization beam splitting chip based on sub-wavelength grating, it includes: a silicon-based substrate; a silicon dioxide buffer layer disposed on the silicon-based substrate; a silicon waveguide-based core layer disposed on the silica buffer layer, comprising: the grating structure comprises an input straight waveguide, a first sub-wavelength grating structure and a sine function curved waveguide which are sequentially connected from left to right, and a second sub-wavelength grating structure and an output straight waveguide which are sequentially connected from left to right, wherein the second sub-wavelength grating structure is arranged in parallel with the first sub-wavelength grating structure and is aligned with the input end of the first sub-wavelength grating structure; and a silica cladding layer arranged on the silica buffer layer and coated outside the core layer. The utility model discloses not only realized polarization beam splitting function, had simple structure compactness, extinction relative altitude, bandwidth big, excellent properties such as the not loaded down with trivial details complicacy of process moreover.
Description
Technical Field
The utility model relates to an integrated silicon photon chip field especially relates to a silica-based polarization beam splitting chip based on sub-wavelength grating.
Background
Polarization Beam Splitters (PBSs) and Polarization Rotators (PRSs) are of great interest for polarization multiplexing, polarization diversity, coherent optical transceivers, quantum PICs (photonic integrated circuits), and the like. Taking PBS as an example, it is a basic component of silicon photonic circuits, and has polarization handling capability. By using a compact PBS, the polarization dimension of the emitted light can be exploited, thereby increasing the data capacity of the on-chip optical system.
As is well known, on the basis of the coupled mode theory, matching and coupling can be performed for the TM mode and not for the TE mode by optimizing various parameters in the structure and calculating the corresponding effective mode index. The PBS structure can implement the separation function when inputting the TE mode and the TM mode. Recently, different structures, such as those based on photonic crystals, multimode interference (MMI) structures, Directional Couplers (DCs), mach-zehnder interferometer (MZI) structures, and grating assisted inverse couplers (GACC), have successfully proven to be possible to implement PBS structures. In general, however, MMIs and MZIs tend to have large Insertion Loss (IL) and size, which prevents their use in ultra-compact PICs. The directional coupler is generally composed of two parallel waveguides, and the structure is simple. Among the broadband PBSs that have been demonstrated, curved DC-PBSs are considered attractive structures due to their compact footprint, high stability, and simple design. However, the ordinary DC structure has a small operating bandwidth and high crosstalk, and is not effective in practical applications. Therefore, in a broadband communication system, development of a broadband PBS having a high extinction ratio and a low insertion loss is urgently required.
In one aspect, the grating is a structure of periodically alternating materials of different refractive indices. In recent years, with the development of micro-nano processing technology, the characteristic size of the grating is smaller and smaller, and sub-wavelength grating (SWG) waveguides are more and more concerned and paid more attention. In SWG waveguides, the grating period (pitch) is much smaller than the wavelength (operating wavelength) in which light propagates. Furthermore, the grating structure can help the light to be coupled quickly by changing the dispersion relation of the modes in the SWG waveguide by adjusting its period and duty cycle, and these excellent properties lead to many innovations based on SWG devices. SWG waveguides are also used in polarization management devices, including PRSs and PBSs. However, in the conventional dual-waveguide dc structure, a tapered region is often required to convert the SWG waveguide into a conventional waveguide, which complicates the fabrication process and increases the overall length of the device.
Silicon-on-insulator (SOI), on the other hand, is considered one of the most important and promising platforms in silicon photonics due to its high refractive index contrast and compatibility with Complementary Metal Oxide Semiconductor (CMOS) processes, which makes it possible to realize compact, low-cost integrated circuits, and high-yield PICs. However, the high index contrast between Si (3.47) and SiO2 (1.44) provides a strong confinement for light, resulting in SOI waveguides with sub-micron cross-sections and smaller bend radii. At the same time, high index contrast and structural asymmetry also contribute to waveguide birefringence, and thus almost all integrated optical devices based on SOI platforms are polarization dependent, which limits their application in optical communication systems.
In view of the two aspects, the SWG is used as a uniform medium, so that the diffraction effect can be effectively inhibited, the rapid coupling is generated, the equivalent refractive index of a waveguide core and the structural birefringence of a device can be flexibly adjusted by changing the grating period and the duty ratio, and a new degree of freedom is provided for the design of a novel photonic device in an SOI or other platform; at the same time, designing SWG-based polarizing optics on SOI platforms can also greatly reduce device manufacturing requirements.
In view of the above, a broadband PBS having a high extinction ratio and a low insertion loss suitable for use in a broadband communication system can be developed using both the SOI platform and the SWG.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, the utility model aims at providing a compact silica-based polarization beam splitting chip based on sub-wavelength grating to can not only improve the polarization beam splitting performance at specific light wave band, can also reduce the device volume, improve the device extinction ratio, increase work bandwidth simplifies process flow.
A silica-based polarization beam splitting chip based on sub-wavelength grating, it includes:
a silicon-based substrate;
a silicon dioxide buffer layer disposed on the silicon-based substrate;
a silicon waveguide-based core layer disposed on the silica buffer layer, comprising: the grating structure comprises an input straight waveguide, a first sub-wavelength grating structure and a sine function curved waveguide which are sequentially connected from left to right, and a second sub-wavelength grating structure and an output straight waveguide which are sequentially connected from left to right, wherein the second sub-wavelength grating structure is arranged in parallel with the first sub-wavelength grating structure and is aligned with the input end of the first sub-wavelength grating structure; and
and the silica cladding is arranged on the silica buffer layer and coated outside the core layer.
In the silicon-based polarization beam splitting chip based on the sub-wavelength grating, the length of the input straight waveguide is 2-4 μm, and the width of the input straight waveguide is 0.45-0.5 μm.
In the silicon-based polarization beam splitting chip based on the sub-wavelength grating, the lengths of the first sub-wavelength grating structure and the second sub-wavelength grating structure are both 5-7 micrometers, and the widths of the first sub-wavelength grating structure and the second sub-wavelength grating structure are both 0.45-0.5 micrometers;
the period of the first sub-wavelength grating structure is 0.3-0.4 mu m, the duty ratio is 0.5-0.7, and the number of gratings of the first sub-wavelength grating structure is 15-17;
the period of the second sub-wavelength grating structure is 0.4-0.5 mu m, the duty ratio is 0.5-0.8, and the number of gratings of the second sub-wavelength grating structure is 12-14;
the distance between the first sub-wavelength grating structure and the second sub-wavelength grating structure which are parallel to each other is 0.25-0.35 mu m.
In the silicon-based polarization beam splitting chip based on the sub-wavelength grating, the length of the sine function bending waveguide is 5-12 microns, the width of the sine function bending waveguide is 0.45-0.5 microns, the transverse offset length of the sine function bending waveguide is 3-5 microns, and the bending radius of the sine function bending waveguide is 7-10 microns.
In the silicon-based polarization beam splitting chip based on the sub-wavelength grating, the length of the output straight waveguide is 5-10 μm, and the width of the output straight waveguide is 0.45-0.5 μm.
In the silicon-based polarization beam splitting chip based on the sub-wavelength grating, the thickness of the silicon dioxide buffer layer is 2 μm.
In the silicon-based polarization beam splitting chip based on the sub-wavelength grating, the thickness of the silica cladding is 2 μm.
Based on the technical scheme, the utility model discloses not only realized polarization beam splitting function, but also have simple structure compactness, extinction relative altitude, the bandwidth is big, the not loaded down with trivial details excellent performance such as complicated of process flow, future accessible adds operations such as toper structure, slope grating angle, sculpture waveguide and further improves the device performance, and it has important application prospect in silicon-based photon field.
Drawings
Fig. 1 is a cross-sectional view of a structure of a silicon-based polarization beam splitting chip based on a sub-wavelength grating according to the present invention;
fig. 2 is a top view of the structure of a core layer based on a silicon waveguide in a silicon-based polarization beam splitting chip based on a sub-wavelength grating according to the present invention;
fig. 3 is a field distribution diagram of optical transmission when TE polarized light is incident into a silicon-based polarization beam splitting chip based on sub-wavelength grating of the present invention, based on the finite difference time domain method, using a logical FDTD Solutions simulation at a center wavelength of 1550 nm;
FIG. 4 is a field distribution diagram of optical transmission when TM polarized light is incident into a silicon-based polarization beam splitting chip based on sub-wavelength grating according to the present invention, when the central wavelength is 1550nm, using a logical FDTD Solutions simulation based on the finite difference time domain method;
FIG. 5 is a TE polarized light extinction ratio diagram of the sub-wavelength grating-based silicon-based polarization beam splitting chip in the 1520-and-1580 nm band;
FIG. 6 is a diagram of the extinction ratio of TM polarized light in the band of 1505-1705nm of a silicon-based polarization beam-splitting chip based on sub-wavelength grating;
fig. 7 is a flowchart of a method for manufacturing a silicon-based polarization beam splitting chip based on a sub-wavelength grating according to the present invention.
Detailed Description
The present invention will be further explained with reference to the accompanying drawings.
Referring to fig. 1 and 2, the present invention provides a silicon-based polarization beam splitting chip based on sub-wavelength grating, which includes:
a silicon-based substrate 1;
a silicon dioxide buffer layer 2 arranged on the silicon-based substrate 1;
a core layer based on a silicon waveguide 3 disposed on a silica buffer layer 2, comprising: an input straight waveguide 41, a first sub-wavelength grating structure 42 and a sine function curved waveguide 43 sequentially connected from left to right, and a second sub-wavelength grating structure 44 and an output straight waveguide 45 sequentially connected from left to right, wherein the second sub-wavelength grating structure 44 is arranged in parallel with the first sub-wavelength grating structure 41 and is aligned with the input end of the first sub-wavelength grating structure 41; and
and a silica clad layer 5 disposed on the silica buffer layer 2 and clad outside the core layer of the silicon-based waveguide 3.
The design idea of the utility model is as follows: firstly, determining the width of an input waveguide to basically ensure single-mode condition light input; then, by calculating the effective mode indexes of TE and TM which change with the grating width and the duty ratio through simulation, the width, the period and the duty ratio of the two sub-wavelength grating structures are optimized, so that the TM mode can be easily subjected to phase matching for coupling, and the TE mode is not coupled to penetrate through the first sub-wavelength grating structure and then is emitted out of the bent waveguide.
Following analog simulation is when working wavelength is 1550nm, and TE polarized light source passes through input straight waveguide 41 and passes first sub-wavelength grating structure 42 and reachs the crooked waveguide 43 outgoing of sine function, and TM polarized light source is through input straight waveguide 41 and under the condition of output straight waveguide 45 outgoing through the coupling of second sub-wavelength grating structure 44, the utility model discloses a coupling effect and polarization beam splitting effect to TE mode polarized light and TM mode polarized light:
firstly, considering the fundamental mode condition and the propagation loss for two polarization states, in the present embodiment, the length L1 of the input straight waveguide 41 is designed to be 2-4 μm, and the width is designed to be 0.45-0.5 μm, so that the single mode condition input of the TE0 mode and TM0 mode light can be basically guaranteed;
secondly, on the basis that the first sub-wavelength grating structure 42 and the second sub-wavelength grating structure 44 are introduced to help two polarized lights to be quickly coupled, TM mode phase matching between waveguides can be achieved through optimizing parameters such as simulation grating period and duty ratio, TE mode is not affected, and therefore the purpose of polarized beam splitting is achieved. In order to achieve a better polarization beam splitting effect at the working wavelength of 1550nm, in the embodiment, the lengths L2 and L4 of the first sub-wavelength grating structure 42 and the second sub-wavelength grating structure 44 are both designed to be 5 to 7 μm, and the widths thereof are both designed to be 0.45 to 0.5 μm; the period T1 of the first sub-wavelength grating structure 42 is designed to be 0.3-0.4 μm, the duty ratio is 0.5-0.7, and the grating number of the first sub-wavelength grating structure 42 is designed to be 15-17; the period T2 of the second sub-wavelength grating structure 44 is designed to be 0.4-0.5 μm, the duty ratio is 0.5-0.8, and the grating number of the second sub-wavelength grating structure 44 is designed to be 12-14; the distance D between the first sub-wavelength grating structure 42 and the second sub-wavelength grating structure 44 which are parallel to each other is 0.25 to 0.35 μm.
Then, because the sine-function curved waveguide 43 is used as a first exit Port (Through Port) and the output straight waveguide 45 is used as a second exit Port (Cross Port), in consideration of crosstalk between the sine-function curved waveguide 43 and the output straight waveguide 45, in the present embodiment, the length L3 of the sine-function curved waveguide 43 is designed to be 5 to 12 μm, the width is designed to be 0.45 to 0.5 μm, the lateral offset length L5 is designed to be 3 to 5 μm, the curved portion adopts a sine function, and the bending radius is designed to be 7 to 10 μm, so that crosstalk between the first exit Port and an adjacent second exit Port is ensured to be smaller; in the present embodiment, the length L6 of the output straight waveguide 45 is designed to be 5 to 10 μm, and the width is designed to be 0.45 to 0.5 μm.
In addition, in the present embodiment, the thickness of the silicon dioxide buffer layer 2 is designed to be 2 μm; the thickness of the silica cladding 5 is designed to be 2 μm.
As shown in fig. 3-4, in this embodiment, when the operating wavelength is 1550nm, the TE0 mode is input, and the light beam exits from the first exit port, and no coupling phenomenon occurs; the TM0 mode is input, and the light beam is coupled through the sub-wavelength grating structure and is emitted from the second exit port.
Here, the polarization beam splitting effect of the present embodiment can be determined by comparing the transmittance of the first exit port and the second exit port, note PC TETransmittance of the output straight waveguide 45 coupled with the input straight waveguide 41 under TE mode light conditions, PC TMIs the transmittance of the output straight waveguide 45 coupled with the input straight waveguide 41 under TM mode light conditions; pT TETransmittance of ports of the sine-function curved waveguide 43 straight through the input straight waveguide 41 under TM-mode light conditions, PT TMThe transmittance of the port of the curved waveguide 43, which is a sine function straight through with the input straight waveguide 41 under TM mode light conditions; pI TEInputting TE mode optical power; pI TMFor input of TM mode optical power, the relevant references are: extinction ratio ER under TE mode light conditionsTE＝10log10(PC TE/PT TE) Insertion loss ILTE＝-10log10((PC TE+PT TE)/PI TE) (ii) a Extinction ratio ER under TM-mode light conditionsTM＝10log10(PC TM/PT TM) Insertion loss ILTM＝-10log10((PC TM+PT TM)/PI TM). As shown in FIGS. 5-6, the TE polarization Extinction Ratio (ER) reaches 10.14dB at the 1550nm operating wavelength; TM polarization stateThe Extinction Ratio (ER) reaches 25.05 dB; for TE polarized light, when the working wavelength is 1520nm to 1580nm and the bandwidth is 60nm, ER is more than 10dB and IL is less than 3 dB; for TM polarized light, the working wavelength is 1505nm to 1705nm, and the bandwidth is 200nm, the ER is larger than 10dB, and the IL is smaller than 3 dB.
As shown in fig. 7, the manufacturing method of the present invention includes the following steps:
step S1, providing a silicon-on-insulator (SOI) substrate, which sequentially comprises from bottom to top: a silicon-based substrate 1, a silicon dioxide buffer layer 2 and a silicon layer 31;
step S2, plating a layer of silicon dioxide on the surface of the silicon layer 31 as a mask 32 by a plasma enhanced sputtering mode;
step S3, etching the silicon-on-insulator substrate plated with the mask 32 by electron beam lithography and plasma etching, and monitoring the etching depth in real time to prepare and obtain the silicon waveguide 3 with a flat surface and silicon dioxide;
step S4, adding ammonium fluoride as a buffer to a Hydrofluoric (HF) acid etching solution to form a buffered hydrofluoric acid (BHF) etching solution, and removing silicon dioxide on the surface of the silicon waveguide 3 using the buffered hydrofluoric acid etching solution;
step S5, removing impurities on the surface of the silicon waveguide 3 by wet chemical process cleaning (RCA);
step S6, preparing a core layer based on the silicon waveguide 3;
step S7, plating a silica cladding 5 on the surface of the silica buffer layer 2 by a Plasma Enhanced Chemical Vapor Deposition (PECVD) mode, enabling the silica cladding 5 to be cladded outside the core layer based on the silicon waveguide 3, and finally cutting to obtain the silicon-based polarization beam splitting chip.
Based on the above situation, the present invention adopts the sine function curved waveguide, the input (output) straight waveguide and two different and mutually parallel SWGs to form, and the total length of the device is 15-20 μm. The coupling length of the TM polarization state is obtained through formula derivation and careful selection of structural parameter simulation, so that the TE polarization state is not coupled, and the effect of separating TE polarized light and TM polarized light at 1550nm can be effectively realized. Meanwhile, by utilizing the strong coupling of the input TM mode, the total coupling length of the device is only 5-7 μm, which greatly shortens the size of the polarization-dependent DC based on SWG, so that the whole structure is small and compact in size; under the 1550nm wavelength, the utility model discloses the extinction ratio is high, and the bandwidth is big, has important practical value in the broadband communication field. Additionally, the structure of the present invention also has the ability to tolerate large manufacturing errors, and compared to compact schemes using silicon nitride, the present invention only requires single step lithography and etching on the SOI platform, thereby greatly reducing the manufacturing requirements.
To sum up, the utility model has the following characteristics:
1) the utility model is based on SOI manufacture, can be combined with CMOS technology, has mature process and high product yield;
2) the utility model can realize the polarization beam splitting function, reduce the structural size of the device by introducing the sub-wavelength grating structure, and has compact structure, simple processing and large manufacturing tolerance;
3) the utility model discloses can realize: the extinction ratio of the 1550nm optical band to the TM polarization state is large, the extinction ratios to the TM polarization state in the 1505 and 1705nm optical band are both larger than 10dB, and the bandwidth is 200 nm;
4) the utility model discloses can realize that this has important practical value in broadband communication field at 1520 and charge the polarization beam splitting function of 1580nm optical band to TM polarized light.
The above embodiments are provided only for the purpose of illustration, not for the limitation of the present invention, and those skilled in the relevant art can make various changes or modifications without departing from the spirit and scope of the present invention, therefore, all equivalent technical solutions should also belong to the scope of the present invention, and should be defined by the claims.
Claims (7)
1. A sub-wavelength grating-based silicon-based polarization beam splitting chip is characterized by comprising:
a silicon-based substrate;
a silicon dioxide buffer layer disposed on the silicon-based substrate;
a silicon waveguide-based core layer disposed on the silica buffer layer, comprising: the grating structure comprises an input straight waveguide, a first sub-wavelength grating structure and a sine function curved waveguide which are sequentially connected from left to right, and a second sub-wavelength grating structure and an output straight waveguide which are sequentially connected from left to right, wherein the second sub-wavelength grating structure is arranged in parallel with the first sub-wavelength grating structure and is aligned with the input end of the first sub-wavelength grating structure; and
and the silica cladding is arranged on the silica buffer layer and coated outside the core layer.
2. The sub-wavelength grating-based silicon-based polarization beam splitting chip of claim 1, wherein the input straight waveguide has a length of 2-4 μm and a width of 0.45-0.5 μm.
3. The sub-wavelength grating-based silicon-based polarization beam splitting chip of claim 1, wherein the first sub-wavelength grating structure and the second sub-wavelength grating structure both have a length of 5-7 μm and a width of 0.45-0.5 μm;
the period of the first sub-wavelength grating structure is 0.3-0.4 mu m, the duty ratio is 0.5-0.7, and the number of gratings of the first sub-wavelength grating structure is 15-17;
the period of the second sub-wavelength grating structure is 0.4-0.5 mu m, the duty ratio is 0.5-0.8, and the number of gratings of the second sub-wavelength grating structure is 12-14;
the distance between the first sub-wavelength grating structure and the second sub-wavelength grating structure which are parallel to each other is 0.25-0.35 mu m.
4. The sub-wavelength grating-based silicon-based polarization beam splitting chip of claim 1, wherein the sine function curved waveguide has a length of 5-12 μm, a width of 0.45-0.5 μm, a lateral offset length of 3-5 μm, and a bending radius of 7-10 μm.
5. The sub-wavelength grating-based silicon-based polarization beam splitting chip of claim 1, wherein the output straight waveguide has a length of 5-10 μm and a width of 0.45-0.5 μm.
6. The sub-wavelength grating-based silicon-based polarization beam splitting chip of claim 1, wherein the thickness of the silica buffer layer is 2 μm.
7. The sub-wavelength grating-based silicon-based polarization beam splitting chip of claim 1, wherein the silica cladding layer has a thickness of 2 μm.
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| CN112379478A (en) * | 2020-11-24 | 2021-02-19 | 华南师范大学 | Curved waveguide based on sub-wavelength grating structure and design method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112379478A (en) * | 2020-11-24 | 2021-02-19 | 华南师范大学 | Curved waveguide based on sub-wavelength grating structure and design method |
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