CN214544897U - Resin substrate and electronic device - Google Patents

Resin substrate and electronic device Download PDF

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Publication number
CN214544897U
CN214544897U CN201990000895.5U CN201990000895U CN214544897U CN 214544897 U CN214544897 U CN 214544897U CN 201990000895 U CN201990000895 U CN 201990000895U CN 214544897 U CN214544897 U CN 214544897U
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resin
base material
region
resin substrate
thickness direction
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高田亮介
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Structure Of Printed Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

The utility model provides a resin substrate and electronic equipment. A resin substrate (101) is provided with a resin base material (10). The resin base material (10) has a 1 st resin part (F1) at least a part of which is bent, and 2 nd resin parts (F2A, F2B) different from the 1 st resin part (F1). The 1 st resin portion (F1) has a lower elastic modulus than the 2 nd resin portions (F2A, F2B), and the 1 st resin portion (F1) has a lower melting point than the 2 nd resin portions (F2A, F2B) (or the 1 st resin portion (F1) has a higher loss tangent at the time of bending than the 2 nd resin portions (F2A, F2B)). The resin substrate further includes: a conductor pattern formed on the resin base material; and a plurality of interlayer connection conductors formed on the resin base material and connected to the conductor patterns. The plurality of interlayer connection conductors are disposed in the 2 nd resin portion.

Description

Resin substrate and electronic device
Technical Field
The present invention relates to a resin substrate, and more particularly, to a resin substrate provided with a resin base material and an electronic device provided with the resin substrate.
Background
Conventionally, a resin substrate including a resin base material and a conductor pattern formed on the resin base material is known. For example, patent document 1 discloses a resin substrate obtained by bending a resin substrate obtained by laminating a plurality of insulating substrate layers.
Prior art documents
Patent document
Patent document 1: japanese patent laid-open publication No. 2004-342884
SUMMERY OF THE UTILITY MODEL
Problem to be solved by utility model
However, when the resin substrate is bent, a bending stress is generated, and a crack may be generated in the resin base material due to the bending stress. Further, after the resin substrate is bent, springback may occur, and the mountability to another circuit substrate or the like may be degraded.
An object of the present invention is to provide a resin substrate in which generation of cracks and springback due to bending stress generated during bending processing are suppressed.
Means for solving the problems
The utility model discloses a resin substrate's characterized in that possesses:
a resin base material having a 1 st resin portion at least a part of which is bent and a 2 nd resin portion different from the 1 st resin portion,
the 1 st resin portion has a lower elastic modulus than the 2 nd resin portion,
the melting point of the 1 st resin part is lower than that of the 2 nd resin part,
the resin substrate further includes:
a conductor pattern formed on the resin base material; and
a plurality of interlayer connection conductors formed on the resin base material and connected to the conductor patterns,
the plurality of interlayer connection conductors are disposed in the 2 nd resin portion.
The utility model discloses a resin substrate's characterized in that possesses:
a resin base material having a 1 st resin portion at least a part of which is bent and a 2 nd resin portion different from the 1 st resin portion,
the 1 st resin portion has a loss tangent higher than that of the 2 nd resin portion when bending is performed.
The utility model discloses an electronic equipment's characterized in that possesses:
the above resin substrate; and
a circuit board connected to the resin substrate in a state where the 1 st resin portion is bent,
the resin substrate further includes a mounting electrode formed on a main surface of the 2 nd resin portion,
the mounting electrode is connected to the circuit board via a conductive bonding material.
According to this configuration, since the 1 st resin portion having a relatively low elastic modulus and a relatively low melting point (or a relatively high loss tangent) is subjected to bending, the 1 st resin portion is more easily subjected to plastic deformation than the case of bending the 2 nd resin portion, and the occurrence of cracks and springback of the resin base material can be suppressed.
Effect of the utility model
According to the present invention, the resin substrate can be realized in which the occurrence of cracks and the springback caused by the bending stress generated when bending is performed can be suppressed.
Drawings
Fig. 1 is a sectional view of a resin substrate 101 according to embodiment 1.
Fig. 2 is a sectional view of a main portion of an electronic device 301 according to embodiment 1.
Fig. 3 is a sectional view sequentially showing the bending process of the resin substrate 101.
Fig. 4 is a sectional view sequentially showing the steps of manufacturing the insulating base material layer 11 before lamination.
Fig. 5 is a sectional view sequentially showing the manufacturing process of the resin substrate 101.
Fig. 6 is a sectional view of the resin substrate 102 according to embodiment 2.
Fig. 7 is a sectional view of the resin substrate 103 according to embodiment 3.
Fig. 8 is an exploded plan view of the resin substrate 103.
Fig. 9 is a sectional view of a main portion of an electronic device 302 according to embodiment 3.
Fig. 10 is a sectional view of the resin substrate 104 according to embodiment 4.
Fig. 11 is a sectional view sequentially showing the steps of manufacturing the insulating base material layer 11 before lamination.
Fig. 12 is a sectional view sequentially showing the manufacturing process of the resin substrate 104.
Fig. 13 is a sectional view of the resin substrate 105 according to embodiment 5.
Fig. 14 is a sectional view sequentially showing the manufacturing process of the resin substrate 105.
Fig. 15 is a sectional view of the resin substrate 106 according to embodiment 6.
Fig. 16 is a sectional view of a resin substrate 107 according to embodiment 7.
Fig. 17 is an exploded plan view of the resin substrate 107.
Detailed Description
Hereinafter, a plurality of embodiments for carrying out the present invention will be described by way of a few specific examples with reference to the drawings. The same reference numerals are given to the same parts in the drawings. In view of ease of explanation or understanding of the points, the embodiments are shown separately for convenience, but partial replacement or combination of the structures shown in different embodiments is possible. In embodiment 2 and thereafter, descriptions of common matters with embodiment 1 are omitted, and only differences will be described. In particular, the same operational effects based on the same structure will not be mentioned in each embodiment.
EXAMPLE 1 embodiment
Fig. 1 is a sectional view of a resin substrate 101 according to embodiment 1. In fig. 1, in order to make the configuration easy to understand, the deteriorated portion RP1 is shown with cross-hatching.
The resin substrate 101 includes a resin base 10, signal conductors 31, conductors 41 and 42, mounting electrodes P1 and P2, interlayer connection conductors V11, V12, V13, V21, V22, V23, protective layers 1 and 2, and the like.
The resin substrate 10 is a rectangular parallelepiped resin blank having a longitudinal direction coinciding with the X-axis direction, and has a 1 st main surface S1 and a 2 nd main surface S2 facing each other. The resin substrate 10 is a flat plate mainly made of Liquid Crystal Polymer (LCP), Polyimide (PI), Polyarylate (PAR), or the like, for example.
The resin base 10 includes a 1 st resin part F1 (described in detail later) at least a part of which is bent, and 2 nd resin parts F2A and F2B different from the 1 st resin part F1. In the resin base 10, the 2 nd resin part F2A, the 1 st resin part F1, and the 2 nd resin part F2B are arranged in this order in the planar direction (for example, the X-axis direction). The resin substrate 10 also has a modified portion RP1 in a part thereof. As described in detail later, the modified portion RP1 is a portion of the resin substrate 10 having properties (such as an elastic modulus, a melting point, and a loss tangent) different from those of other portions. In the present embodiment, modified portion RP1 corresponds to 1 st resin portion F1.
The mounting electrodes P1 and P2 and the protective layer 1 are formed on the 1 st main surface S1 of the resin base 10. Mounting electrode P1 is disposed in 2 nd resin part F2A, and mounting electrode P2 is disposed in 2 nd resin part F2B. The signal conductor 31 and the protective layer 2 are formed on the 2 nd main surface S2 of the resin base 10. Conductors 41 and 42 and interlayer connection conductors V11, V12, V13, V21, V22, and V23 are formed inside the resin base 10.
The resin base material 10 is formed by sequentially laminating a plurality of insulating base material layers 11, 12, and 13 mainly made of resin (thermoplastic resin). Each of the plurality of insulating base material layers 11, 12, and 13 is a flexible rectangular flat plate having a longitudinal direction aligned with the X-axis direction. The plurality of insulating base material layers 11, 12, and 13 are sheets made of, for example, Liquid Crystal Polymer (LCP), Polyimide (PI), Polyarylate (PAR), or the like as a main material.
The mounting electrodes P1 and P2 are formed on the back surface of the insulating base layer 11. The mounting electrode P1 is a rectangular conductor pattern disposed near the 1 st end (left end of the insulating base material layer 11 in fig. 1) of the insulating base material layer 11. The mounting electrode P2 is a rectangular conductor pattern disposed near the 2 nd end (right end of the insulating base material layer 11 in fig. 1) of the insulating base material layer 11. The mounting electrodes P1 and P2 are conductor patterns such as Cu foils, for example. Further, a plurality of interlayer connection conductors V11, V21 are formed on the insulating base layer 11.
Conductors 41 and 42 are formed on the surface of the insulating base layer 12. The conductor 41 is a rectangular conductor pattern disposed near the 1 st end (left end of the insulating base material layer 12 in fig. 1) of the insulating base material layer 12. The conductor 42 is a rectangular conductor pattern disposed near the 2 nd end (right end of the insulating base material layer 12 in fig. 1) of the insulating base material layer 12. The conductors 41 and 42 are conductor patterns such as Cu foils, for example. Further, a plurality of interlayer connection conductors V12, V22 are formed on the insulating base layer 12.
A signal conductor 31 is formed on the surface of the insulating base layer 13. The signal conductor 31 is a linear conductor pattern extending in the X-axis direction. The signal conductor 31 is a conductor pattern such as Cu foil, for example. Further, a plurality of interlayer connection conductors V13, V23 are formed on the insulating base layer 13.
The protective layer 1 is a protective film laminated on the back surface of the insulating base layer 11, and has substantially the same planar shape as the insulating base layer 11. The protective layer 1 has openings at positions corresponding to the positions of the mounting electrodes P1, P2, respectively. Therefore, even when the protective layer 1 is formed on the back surface of the insulating base layer 11 (the 1 st main surface S1 of the resin base 10), the mounting electrodes P1 and P2 are exposed to the outside through the openings. The protective layer 2 is a protective film laminated on the surface of the insulating base layer 13, and has substantially the same planar shape as the insulating base layer 13. The protective layers 1 and 2 are, for example, a coverlay film (solder mask), an epoxy film, or the like.
As shown in fig. 1, the mount electrode P1 is connected to one end of the signal conductor 31 via the interlayer connection conductors V11, V12, V13, and the conductor 41. The other end of the signal conductor 31 is connected to the mounting electrode P2 via interlayer connection conductors V21, V22, V23, and a conductor 42. Thus, the mounting electrodes P1, P2 are electrically connected.
The elastic modulus (E1) of the 1 st resin portion F1 (modified portion RP1) of the resin base 10 is lower than the elastic modulus (E2) of the 2 nd resin portions F2A and F2B (E1 < E2). The elastic modulus is measured for each part by, for example, a nanoindenter (Nano indenter), an atomic force microscope (AMF), or the like. In the present embodiment, the young's modulus of the 2 nd resin portions F2A and F2B (liquid crystal polymer) of the resin base material 10 is about 15 GPa. The melting point (Tm1) of the 1 st resin part F1 was lower than the melting point (Tm2) of the 2 nd resin part (Tm1 < Tm 2). The melting point may be determined as a temperature at which the elastic modulus becomes 0 or a temperature at which the elastic modulus is extrapolated to 0 from a correlation between temperature and elastic modulus using a nanoindenter, for example, or may be measured by Differential Scanning Calorimetry (DSC) using samples of about 100mg from the front and back surfaces of each part. Further, the loss tangent (tan δ 1) of the 1 st resin part F1 at the time of bending was higher than the loss tangent (tan δ 2) of the 2 nd resin parts F2A and F2B (tan δ 1 > tan δ 2).
The loss tangent (tan δ) was obtained by the following formula.
[ mathematical formula 1]
Figure DEST_PATH_GDA0002924253290000051
E': imaginary part of complex modulus of elasticity (loss modulus of elasticity)
E': real part of complex modulus of elasticity (storage modulus of elasticity)
The loss elastic modulus (E "), the storage elastic modulus (E'), and the loss tangent (tan δ) are measured by, for example, dynamic viscoelasticity measurement.
Next, an example of mounting the resin substrate according to the present embodiment will be described with reference to the drawings. Fig. 2 is a sectional view of a main portion of an electronic device 301 according to embodiment 1.
The electronic device 301 according to the present embodiment includes a resin substrate 101A, circuit substrates 201 and 202, and the like. The electronic device 301 includes other elements, but is not illustrated in fig. 2. The resin substrate 101A is different from the resin substrate 101 in that the 1 st resin portion F1 is bent (plastically deformed). The other structures are the same as the resin substrate 101.
The circuit board 201 has a 1 st surface PS21, and the circuit board 202 has a 2 nd surface PS22. As shown in fig. 2, the heights of the 1 st plane PS21 and the 2 nd plane PS22 in the Z-axis direction are different from each other. The resin substrate 101A is mounted on the circuit boards 201 and 202 in a state where the 1 st resin portion F1 is bent. Specifically, the mounting electrode P1 of the resin substrate 101A is connected to the external electrode EP1 formed on the 1 st surface PS21 of the circuit substrate 201 via the conductive bonding material 5 such as solder. The mounting electrode P2 of the resin substrate 101A is connected to the external electrode EP2 formed on the 2 nd surface PS22 of the circuit substrate 202 via the conductive bonding material 5.
In this way, since the 1 st resin portion F1 is bent in the Z-axis direction (due to plastic deformation), the resin substrate 101A can be easily mounted on the circuit boards 201 and 202 having surfaces with different heights in the Z-axis direction.
The resin substrate 101 according to the present embodiment is subjected to bending (plastic deformation) in the following steps, for example. Fig. 3 is a sectional view sequentially showing the bending process of the resin substrate 101.
First, as shown in (1) and (2) of fig. 3, the resin substrate 101 is prepared, and the 1 st main surface S1 and the 2 nd main surface S2 of the resin base 10 are heated and pressed in the Z-axis direction by the upper mold 3 and the lower mold 4. As shown in fig. 3, the position where heating and pressing are performed is the 1 st resin portion F1 of the resin base material 10. The upper mold 3 and the lower mold 4 are metal structures having an L-shaped cross section.
After the thermoplastic resin of the resin base 10 is cooled and solidified, the resin base 10 is removed from the upper mold 3 and the lower mold 4 to obtain the resin substrate 101A. By such a manufacturing method, the resin substrate 101A which maintains (retains) the shape after the bending (plastic deformation) as shown in (3) in fig. 3 can be obtained.
In the present embodiment, since the 1 st resin portion F1 having a relatively low elastic modulus and a relatively low melting point (or a relatively high loss tangent) is subjected to bending, it is easier to plastically deform the 1 st resin portion F1 than in the case of bending the 2 nd resin portions F2A and F2B, and the occurrence of cracks and springback of the resin base material 10 during bending can be suppressed.
In order to suppress the occurrence of cracks and the occurrence of springback in the resin base 10 during bending, the elastic modulus and the melting point of the 1 st resin portion F1 are preferably 90% or less of the elastic modulus and the melting point of the 2 nd resin portions F2A and F2B.
The resin substrate 101 according to the present embodiment is manufactured, for example, in the following steps. Fig. 4 is a sectional view sequentially showing the steps of manufacturing the insulating base material layer 11 before lamination. Fig. 5 is a sectional view sequentially showing the manufacturing process of the resin substrate 101. In fig. 4, for convenience of explanation, only the insulating base layer 11 is described, but the insulating base layers 12 and 13 are also manufactured in the same manufacturing process. Note that, although the description is given in fig. 4 and 5 in terms of the manufacturing process in a single chip (monolithic) for convenience of description, the actual manufacturing process of the resin substrate is performed in a state of a collective substrate.
First, as shown in fig. 4 (1), an insulating base layer 11 mainly made of resin (thermoplastic resin) is prepared, and a metal foil 30 is laminated on the back surface. The insulating base layer 11 is a sheet mainly made of Liquid Crystal Polymer (LCP), for example.
Next, as shown in (2) of fig. 4, mounting electrodes P1 and P2 are formed on the back surface of the insulating base layer 11. Specifically, the metal foil 30 laminated on the back surface of the insulating base material layer 11 is patterned by photolithography, and the mounting electrodes P1 and P2 are formed on the back surface of the insulating base material layer 11. Similarly, conductors 41 and 42 are formed on the surface of the insulating base layer 12, and a signal conductor 31 (not shown) is formed on the surface of the insulating base layer 13.
Further, a plurality of interlayer connection conductors V11, V21 are formed on the insulating base layer 11. The interlayer connection conductors V11 and V21 are provided by providing holes (through holes) in the insulating base layer 11, disposing (filling) a conductive paste containing metal powder such as Cu, Sn, or an alloy thereof and a resin material in the holes, and then curing the conductive paste by heating and pressing. Similarly, a plurality of interlayer connection conductors V12, V22 are formed on the insulating base layer 12, and a plurality of interlayer connection conductors V13, V23 are formed on the insulating base layer 13 (not shown).
Next, as shown in (3) of fig. 4, the insulating base layer 11 is subjected to a modification treatment. Thereby, a part of the insulating base layer 11 is modified to become a modified portion RP 11. Specifically, a portion of the insulating base material layer 11 which becomes the 1 st resin portion when the resin base material is formed is subjected to any one of plasma discharge, corona discharge, and UV treatment (see a blank arrow shown in (3) in fig. 4). Thus, the elastic modulus (E11) of the portion of the insulating base layer 11 that becomes the 1 st resin portion after heating and pressing is lower than the elastic modulus (E21) of the portion that becomes the 2 nd resin portion (E11 < E21). Further, the melting point (Tm11) of the portion that becomes the 1 st resin portion after the heating and pressing is lower than the melting point (Tm21) of the portion that becomes the 2 nd resin portion. Although not shown, the insulating base material layers 12 and 13 are also subjected to a modification treatment.
This step of modifying the plurality of insulating base material layers 11, 12, and 13 mainly made of resin is an example of the "modification step 1" in the present invention.
Next, as shown in fig. 5 (1), a plurality of insulating base material layers 11, 12, and 13 on which conductors and interlayer connection conductors are formed are sequentially stacked. Then, the stacked plurality of insulating base material layers 11, 12, 13 are heated and pressed, thereby forming the resin base material 10 shown in (2) in fig. 5.
The "1 st modification step" is an example of the "1 st base material forming step" of the present invention, and is a step of laminating the plurality of insulating base material layers 11, 12, and 13, and heating and pressing the laminated plurality of insulating base material layers 11, 12, and 13 to form the resin base material 10.
Then, the protective layer 1 is formed on the 1 st main surface S1 of the resin base 10, and the protective layer 2 is formed on the 2 nd main surface S2 of the resin base 10, thereby obtaining the resin substrate 101 shown in (3) in fig. 5. The protective layers 1 and 2 are, for example, a cover film, a solder resist, an epoxy film, or the like.
According to the above manufacturing method, a resin substrate in which generation of cracks and springback during bending are suppressed can be easily manufactured.
Further, according to the above-described manufacturing method, the resin substrate 101 can be easily formed by laminating the plurality of insulating base material layers 11, 12, and 13 mainly made of the thermoplastic resin and heating and pressing (collectively pressing), and therefore, the manufacturing process can be reduced and the cost can be kept low.
Further, in the above-described manufacturing method, since the insulating base material layers 11, 12, and 13 before lamination are subjected to the modification treatment, the modification treatment can be performed more uniformly than in the case where the resin base material formed by laminating a plurality of insulating base material layers is subjected to the modification treatment.
In the present embodiment, the 1 st resin section F1 is located between the interlayer connection conductors V11, V12, and V13 and the interlayer connection conductors V21, V22, and V23 in the X axis direction. In the present embodiment, the 1 st resin part F1 is located between the mounting electrodes P1 and P2 in the X-axis direction. The range of the modification treatment (the 1 st resin portion F1) can be controlled by the interlayer connection conductors V11 to V13, V21 to V23, the mounting electrodes P1, P2, and the like.
EXAMPLE 2 EXAMPLE
In embodiment 2, an example of a resin substrate in which only one of a plurality of insulating base material layers forming a resin base material is subjected to a modification treatment is shown.
Fig. 6 is a sectional view of the resin substrate 102 according to embodiment 2. In fig. 6, in order to make the configuration easy to understand, the deteriorated portion RP1 is shown with cross-hatching.
The resin substrate 102 is different from the resin substrate 101 according to embodiment 1 in that it includes a resin base material 10A. The resin base material 10A is different from the resin base material 10 described in embodiment 1 in that only one insulating base material layer 13 among the plurality of insulating base material layers 11 to 13 is modified. The other structure of the resin substrate 102 is the same as that of the resin substrate 101.
In the present embodiment, only the insulating base layer 13 is subjected to the modification treatment (only the insulating base layer 13 is formed with the modified portion RP 13).
In embodiment 1, an example is shown in which all of the plurality of insulating base material layers 11 to 13 forming the resin base material 10 are subjected to the modification treatment, but at least 1 layer may be subjected to the modification treatment as shown in the present embodiment. As in the resin substrate 102 according to the present embodiment, at least the surface layers (the insulating base layers 11 and 13 having the 1 st main surface S1 or the 2 nd main surface S2) are preferably subjected to a modification treatment. According to this structure, the occurrence of cracks on the surface layer side where stress is most concentrated during bending can be suppressed. Such a resin substrate can be produced by, for example, subjecting the insulating base material layers 11 and 13 positioned on the surface layer side among the plurality of insulating base material layers to any one of plasma discharge, corona discharge, and UV treatment (the 1 st modification treatment step).
In the resin substrate 102 according to the present embodiment, the modified portion RP13 is formed only on the 2 nd main surface S2 (top surface) side of the 1 st resin portion F1, and is not formed on the 1 st main surface S1 (mounting surface) of the 2 nd resin portions F2A and F2B. With this configuration, bending stress and the like generated when the resin substrate 102 is bent can be made less likely to be applied to the mounting electrodes P1 and P2, and thus, the mountability and the like of the resin substrate 102 can be ensured.
EXAMPLE 3
In embodiment 3, an example of a resin substrate in which the interface between the 1 st resin portion and the 2 nd resin portion is inclined with respect to the main surface of the resin base material is shown.
Fig. 7 is a sectional view of the resin substrate 103 according to embodiment 3. Fig. 8 is an exploded plan view of the resin substrate 103. In fig. 7, in order to make the structure easy to understand, the deteriorated portion RP1 is shown with cross-hatching.
The resin substrate 103 is different from the resin substrate 101 according to embodiment 1 in that it includes a resin base 10B. The resin base 10B is different from the resin base 10 described in embodiment 1 in that the interface between the 1 st resin part F1 and the 2 nd resin parts F2A and F2B is inclined with respect to the 1 st main surface S1 and the 2 nd main surface S2 of the resin base 10B (is not perpendicular to the 1 st main surface S1 and the 2 nd main surface S2). The other structure of the resin substrate 103 is the same as that of the resin substrate 101.
As shown in fig. 7, the modified portion RP1 (the 1 st resin portion F1) of the resin base 10B has a gradually increasing planar cross-sectional area from the 1 st main surface S1 (mounting surface) toward the 2 nd main surface S2 (top surface). In other words, the modified portion RP1 (the 1 st resin portion F1) has a reverse tapered shape from the 1 st main surface S1 toward the 2 nd main surface S2 (in the + Z direction).
Next, an example of mounting the resin substrate according to the present embodiment will be described with reference to the drawings. Fig. 9 is a sectional view of a main portion of an electronic device 302 according to embodiment 3.
The electronic device 302 includes the resin substrate 103A, the circuit substrates 201 and 202, and the like. The electronic device 302 includes other elements, but is not illustrated in fig. 9. The circuit boards 201 and 202 are the same as those described in embodiment 1.
The resin substrate 103A is mounted on the circuit boards 201 and 202 in a state where the 1 st resin portion F1 is bent. Specifically, the mounting electrode P1 of the resin substrate 103A is connected to the external electrode EP1 of the circuit substrate 201 via the conductive bonding material 5. The mounting electrode P2 of the resin substrate 103A is connected to the external electrode EP2 of the circuit substrate 202 via the conductive bonding material 5.
In embodiment 1, an example is shown in which the interface between the 1 st resin part F1 and the 2 nd resin parts F2A and F2B is perpendicular to the 1 st main surface S1 and the 2 nd main surface S2 (parallel to the Z-axis direction), but the resin substrate of the present invention is not limited to this. As shown in the present embodiment, the interface between the 1 st resin part F1 and the 2 nd resin parts F2A and F2B may be inclined with respect to the 1 st main surface S1 and the 2 nd main surface S2 (not parallel to the Z-axis direction).
The interface is formed by controlling the intensity distribution of plasma discharge, corona discharge or UV treatment in the modification treatment (modification treatment step 2) of the resin base material. The interface may be formed by controlling the intensity distribution of plasma discharge or the like during the modification treatment (the 1 st modification treatment step) of the plurality of insulating base material layers.
In the resin substrate 103A according to the present embodiment, a modified portion RP1 (1 st resin portion F1) having a reverse tapered shape is formed from the 1 st main surface S1 (mount surface) toward the 2 nd main surface S2 (top surface). Specifically, in the resin substrate 103 according to the present embodiment, the elastic modulus in the vicinity of the portions (the 2 nd main surface S2 side of the 2 nd resin portions F2A and F2B) connected to the circuit boards 201 and 202 is high, and the flexibility of the bent portion (the 1 st resin portion F1) is high. With this configuration, bending stress or the like generated when the resin substrate 103 is bent can be made less likely to be applied to the mounting electrodes P1 and P2 formed on the 1 st main surface S1. Therefore, the 2 nd resin portions F2A and F2B are not easily deformed, and the mountability of the resin substrates 103 and 103A is improved.
Whether or not the interface between the 1 st resin part F1 and the 2 nd resin parts F2A and F2B is inclined with respect to the 1 st main surface S1 and the 2 nd main surface S2 can be determined by measuring the elastic modulus at the front surface (for example, the 1 st main surface S1) and the back surface (for example, the 2 nd main surface S2) in the Z-axis direction by a nanoindenter or the like, for example.
In the present embodiment, the modified portion RP1 (the 1 st resin portion F1) is illustrated as an example of a reverse tapered shape in which the planar cross-sectional area gradually increases from the 1 st main surface S1 toward the 2 nd main surface S2, but the present invention is not limited to this configuration. The flat cross-sectional area of the modified portion may be different for each of the plurality of insulating base material layers, and for example, a structure in which a portion having a large flat cross-sectional area and a portion having a small flat cross-sectional area of the modified portion are alternately arranged in the Z-axis direction may be employed.
EXAMPLE 4 embodiment
In embodiment 4, an example in which the 2 nd resin portion of the resin base material is a modified portion is shown.
Fig. 10 is a sectional view of the resin substrate 104 according to embodiment 4. In fig. 10, deterioration portions RP2A, RP2B are shown with cross hatching for easy understanding of the structure.
The resin substrate 104 is different from the resin substrate 101 according to embodiment 1 in that it includes a resin base material 10C. The resin substrate 10C is different from the resin substrate 10 according to embodiment 1 in that it has modified portions RP2A and RP2B in a part thereof. The other structure of the resin substrate 104 is substantially the same as that of the resin substrate 101.
The resin substrate 10C is, for example, a flat plate mainly made of Liquid Crystal Polymer (LCP). In the present embodiment, modified portion RP2A corresponds to resin part 2F 2A, and modified portion RP2B corresponds to resin part 2F 2B.
The elastic modulus (E1) of the 1 st resin portion F1 of the resin base material 10C is lower than the elastic modulus (E2) of the 2 nd resin portions F2A and F2B (modified portions RP2A and RP2B) (E1 < E2). The melting point (Tm1) of the 1 st resin portion F1 is lower than the melting point (Tm2) of the 2 nd resin portions F2A and F2B (Tm1 < Tm 2). Further, the loss tangent (tan δ 1) of the 1 st resin part F1 at the time of bending was higher than the loss tangent (tan δ 2) of the 2 nd resin parts F2A and F2B (tan δ 1 > tan δ 2).
The resin substrate 104 according to the present embodiment is manufactured, for example, in the following steps. Fig. 11 is a sectional view sequentially showing the steps of manufacturing the insulating base material layer 11 before lamination. Fig. 12 is a sectional view sequentially showing the manufacturing process of the resin substrate 104. In fig. 11, for convenience of explanation, only the insulating base layer 11 is described, but the insulating base layers 12 and 13 are also manufactured in the same manufacturing process. Note that, although the description is given in terms of the manufacturing process in a single chip (monolithic) in fig. 11 and 12 for convenience of description, the actual manufacturing process of the resin substrate is performed in a state of a collective substrate.
First, as shown in fig. 11 (1), an insulating base layer 11 mainly made of resin is prepared, and a metal foil 30 is laminated on the rear surface. The insulating base layer 11 is a sheet mainly made of Liquid Crystal Polymer (LCP), for example.
Next, as shown in (2) of fig. 11, mounting electrodes P1 and P2 are formed on the back surface of the insulating base material layer 11. Similarly, conductors 41 and 42 are formed on the surface of the insulating base layer 12, and a signal conductor 31 (not shown) is formed on the surface of the insulating base layer 13.
Next, the insulating base layer 11 is subjected to a modification treatment. Thereby, a part of the insulating base layer 11 is modified to become modified portions RP21A and RP 21B. Specifically, the insulating base layer 11 is subjected to a photo-baking treatment at a portion which becomes the 2 nd resin portion when the resin base material is formed (see the blank arrow shown in (2) in fig. 11). The photo-baking treatment is performed by heating the insulating base material layer by pulse irradiation (pulse width of 3mS) with a flash lamp having an output of 350W, for example.
Thus, the elastic modulus (E21) of the portion of the insulating base layer 11 that becomes the 2 nd resin portion after heating and pressing is higher than the elastic modulus (E11) of the portion that becomes the 1 st resin portion (E11 < E21). Further, the melting point (Tm21) of the portion that becomes the 2 nd resin portion after the heating and pressing becomes higher than the melting point (Tm11) of the portion that becomes the 1 st resin portion. Although not shown, the insulating base material layers 12 and 13 are also subjected to a modification treatment.
In this way, the step of modifying the plurality of insulating base material layers 11, 12, and 13 mainly made of resin is an example of the "1 st modification step" in the present invention.
Then, as shown in (3) and (4) of fig. 11, a plurality of interlayer connection conductors V11 and V21 are formed on the insulating base material layer 11. These interlayer connection conductors V11, V21 are provided by providing holes H11, H21 in the insulating base material layer 11, then disposing (filling) a conductive paste containing a resin material and a metal powder such as Cu, Sn, or an alloy thereof in the holes, and then curing the conductive paste by heating and pressing. Similarly, a plurality of interlayer connection conductors V12, V22 are formed on the insulating base layer 12, and a plurality of interlayer connection conductors V13, V23 are formed on the insulating base layer 13 (not shown).
Next, as shown in (1) of fig. 12, a plurality of insulating base material layers 11, 12, 13 are sequentially laminated. Then, the stacked plurality of insulating base material layers 11, 12, and 13 are heated and pressed, thereby forming a resin base material 10C shown in (2) in fig. 12.
The "1 st modification step" is an example of the "1 st base material forming step" of the present invention, and is a step of laminating the plurality of insulating base material layers 11, 12, and 13, and heating and pressing the laminated plurality of insulating base material layers 11, 12, and 13 to form the resin base material 10C.
Then, the protective layer 1 is formed on the 1 st main surface S1 of the resin base 10C, and the protective layer 2 is formed on the 2 nd main surface S2 of the resin base 10, thereby obtaining the resin substrate 104 shown in (3) in fig. 12.
In the present embodiment, the melting point (Tm2) of the 2 nd resin portions F2A and F2B is higher than the melting point (Tm1) of the 1 st resin portion F1. With this configuration, when resin substrate 104 is heated and pressurized by a heat bar or the like and mounted on a circuit board, or when resin substrate 104 is mounted on a circuit board by a reflow method or the like, deformation of 2 nd resin portions F2A and F2B can be suppressed. Therefore, a bonding failure between the resin substrate 104 and the circuit substrate can be suppressed.
EXAMPLE 5 EXAMPLE
In embodiment 5, an example is shown in which the 1 st resin portion of the resin base material has a plurality of regions having different physical properties arranged in the planar direction.
Fig. 13 is a sectional view of the resin substrate 105 according to embodiment 5. In fig. 13, in order to make the configuration easy to understand, the deteriorated portions RP1A are shown by cross hatching, and the deteriorated portions RP1B, RP1C are shown by hatching.
The resin substrate 105 is different from the resin substrate 101 according to embodiment 1 in that it includes a resin base material 10D. The resin substrate 10D is different from the resin substrate 10 according to embodiment 1 in that modified portions RP1A, RP1B, and RP1C are partially included. The other structure of the resin substrate 105 is substantially the same as that of the resin substrate 101.
The 1 st resin part F1 of the resin base 10D has the 1 st region R1 and the 2 nd region R2. Specifically, when the 1 st resin part F1 is divided into three in the plane direction (for example, the X-axis direction), the 1 st region R1 is a region adjacent to the 2 nd resin parts F2A and F2B. When the 1 st resin part F1 is divided into three in the plane direction, the 2 nd region R2 is a region distant from the 2 nd resin parts F2A and F2B. In the present embodiment, the 1 st region R1 coincides with the modified portions RP1B and RP1C, and the 2 nd region R2 coincides with the modified portion RP 1A.
The 2 nd resin part F2A, the 1 st region R1 (modified portion RP1B), the 2 nd region R2 (modified portion RP1A), the 1 st region R1 (modified portion RP1C), and the 2 nd resin part F2B are arranged in this order in the planar direction.
The elastic modulus (E11) of the 1 st region R1 (modified portions RP1B and RP1C) is higher than the elastic modulus (E12) of the 2 nd region R2 (modified portion RP1A) and lower than the elastic modulus (E2) of the 2 nd resin portions F2A and F2B (E12 < E11 < E2). The melting point (Tm11) of the 1 st region R1 is higher than the melting point (Tm12) of the 2 nd region R2 and lower than the melting points (Tm2) of the 2 nd resin portions F2A and F2B (Tm12 < Tm11 < Tm 2). Further, the loss tangent (tan δ 11) of the 1 st region R1 at the time of bending is lower than the loss tangent (tan δ 12) of the 2 nd region R2 and higher than the loss tangent (tan δ 2) of the 2 nd resin portions F2A and F2B (tan δ 12 > tan δ 11 > tan δ 2).
When the difference between the elastic modulus and the melting point is large at the boundary between the 1 st resin part F1 and the 2 nd resin parts F2A and F2B, bending stress tends to concentrate on the boundary when the 1 st resin part F1 is bent, and cracks or the like tend to occur in the vicinity of the boundary. On the other hand, in the present embodiment, the 1 st region R1 is disposed between the 2 nd region R2 having the lowest relative elastic modulus and melting point (or the highest loss tangent at the time of bending) and the 2 nd resin portions F2A and F2B having the highest relative elastic modulus and melting point (or the lowest loss tangent at the time of bending). Therefore, the bending stress at the bending of the 1 st resin portion F1 is dispersed, and the occurrence of cracks in the vicinity of the boundary due to the concentration of the bending stress can be suppressed.
In addition, although the example in which the 1 st resin part F1 is three-divided into the 1 st region R1 and the two 2 nd regions R2 is shown in the present embodiment, it is not necessary to clearly distinguish the 1 st region R1 from the 2 nd region R2. For example, the elastic modulus and the melting point (or the loss tangent) may be continuously changed (the elastic modulus and the melting point are gradually increased or the loss tangent is gradually decreased) from the vicinity of the center of the 1 st resin portion F1 in the planar direction (for example, the X-axis direction) toward the 2 nd resin portions F2A and F2B. In other words, the 1 st resin portion F1 may have a structure in which the elastic modulus and the melting point (or the loss tangent) of the portion located outside the resin base material 10D in the planar direction are higher than the elastic modulus and the melting point of the portion located at the center in the planar direction (or lower than the loss tangent of the portion located at the center in the planar direction).
The resin substrate 105 according to the present embodiment is manufactured, for example, in the following steps. Fig. 14 is a sectional view sequentially showing the manufacturing process of the resin substrate 105. In fig. 14, for convenience of explanation, the manufacturing process in a single chip (monolithic) is explained, but the actual manufacturing process of the resin substrate is performed in a state of a collective substrate.
First, as shown in fig. 14 (1), insulating base material layers 11, 12, and 13 mainly made of resin are prepared. Then, the mounting electrodes P1 and P2 are formed on the insulating base layer 11, the conductors 41 and 42 are formed on the insulating base layer 12, and the signal conductor 31 is formed on the insulating base layer 13.
The interlayer connection conductors V11 and V21 are formed on the insulating base layer 11, the interlayer connection conductors V12 and V22 are formed on the insulating base layer 12, and the interlayer connection conductors V13 and V23 are formed on the insulating base layer 13.
Next, the plurality of insulating base material layers 11, 12, and 13 are stacked in this order. Then, the stacked plurality of insulating base material layers 11, 12, and 13 are heated and pressed (collectively pressed), thereby forming a resin base material 10D as shown in fig. 14 (2).
This step of forming the resin base material 10D is an example of the "2 nd base material forming step" of the present invention.
Next, the resin base material 10D is subjected to a modification treatment. Thus, a part of the resin substrate 10D is modified to become modified portions RP1A, RP1B, and RP 1C. Specifically, a portion of the resin base material 10D which becomes the 1 st resin portion (for example, the vicinity of the center in the longitudinal direction of the resin base material 10D) is subjected to any one of plasma discharge, corona discharge, and UV treatment (see the blank arrow shown in (2) in fig. 14). The above-described modification treatment can provide a resin base material having an elastic modulus and a melting point that gradually increase with distance from a position where plasma discharge, corona discharge, or UV treatment is performed (see blank arrows shown in fig. 14 (2)) according to a temperature distribution, a luminous intensity distribution, or the like. That is, it is possible to realize a resin base material in which the elastic modulus and the melting point are continuously changed (gradually increased) from the vicinity of the center of the 1 st resin part F1 in the planar direction (for example, the X-axis direction) toward the 2 nd resin parts F2A and F2B.
Thus, the elastic modulus (E11) of the 1 st region R1 (modified portions RP1B and RP1C) is higher than the elastic modulus (E12) of the 2 nd region R2 (modified portion RP1A) and lower than the elastic modulus (E2) of the 2 nd resin portions F2A and F2B (E12 < E11 < E2). The melting point (Tm11) of the 1 st region R1 is higher than the melting point (Tm12) of the 2 nd region R2 and lower than the melting points (Tm2) of the 2 nd resin portions F2A and F2B (Tm12 < Tm11 < Tm 2). Further, the loss tangent (tan δ 11) of the 1 st region R1 at the time of bending is lower than the loss tangent (tan δ 12) of the 2 nd region R2 and higher than the loss tangent (tan δ 2) of the 2 nd resin portions F2A and F2B (tan δ 12 > tan δ 11 > tan δ 2).
The resin base material 10D is subjected to the modification treatment after the "2 nd base material forming step", which is an example of the "2 nd modification treatment step" in the present invention.
Then, the protective layer 1 is formed on the 1 st main surface S1 of the resin base 10D, and the protective layer 2 is formed on the 2 nd main surface S2 of the resin base 10D, thereby obtaining the resin substrate 105 shown in (3) in fig. 14.
In the above-described manufacturing method, the resin base material 10D formed by laminating the plurality of insulating base material layers 11, 12, and 13 is subjected to the modification treatment, and therefore, compared with a case where the insulating base material layers 11, 12, and 13 before lamination are subjected to the modification treatment, the manufacturing process can be reduced, and the cost can be suppressed to a low level.
Further, according to the above-described manufacturing method, it is possible to easily realize a resin base material in which the elastic modulus and the melting point (or the loss tangent) of the portion located outside the 1 st resin portion F1 in the planar direction (for example, the X-axis direction) are higher than those of the portion located at the center in the planar direction (or lower than those of the portion located at the center in the planar direction).
In the present embodiment, the example in which the "2 nd modification treatment step" performs any of plasma discharge, corona discharge, and UV treatment on the portion of the resin base 10D that becomes the 1 st resin portion is shown, but the method is not limited thereto. The "2 nd alteration treatment step" may be, for example, a step of subjecting the resin base 10D to a photo-baking treatment at portions to be the 2 nd resin portions F2A and F2B.
EXAMPLE 6 EXAMPLE
In embodiment 6, an example is shown in which the 1 st resin portion of the resin base material has a plurality of regions having different physical properties arranged in the thickness direction.
Fig. 15 is a sectional view of the resin substrate 106 according to embodiment 6. In fig. 15, in order to make the configuration easy to understand, the deteriorated portions RP1D are shown by cross hatching, and the deteriorated portions RP1E, RP1F are shown by hatching.
The resin substrate 106 is different from the resin substrate 101 according to embodiment 1 in that it includes a resin base 10E. The resin substrate 10E is different from the resin substrate 10 according to embodiment 1 in that modified portions RP1D, RP1E, and RP1F are partially included. The other structure of the resin substrate 106 is substantially the same as that of the resin substrate 101.
The 1 st resin part F1 of the resin base material 10E has the 3 rd region R3 and the 4 th region R4. Specifically, when the 1 st resin part F1 is divided into three in the thickness direction (Z-axis direction), the 3 rd region R3 is a region located at the center in the thickness direction. When the 1 st resin part F1 is three-divided in the thickness direction, the 4 th region R4 is a region located more outward in the thickness direction than the 3 rd region R3. In the present embodiment, the 3 rd region R3 coincides with the modified portion RP1D, and the 4 th region R4 coincides with the modified portions RP1E and RP 1F.
In the 1 st resin part F1, the 4 th region R4 (modified portion RP1E), the 3 rd region R3 (modified portion RP1D), and the 4 th region R4 (modified portion RP1F) are arranged in this order in the thickness direction (Z-axis direction).
The elastic modulus (E14) of the 4 th region R4 (modified portions RP1E and RP1F) is lower than the elastic modulus (E13) of the 3 rd region R3 (modified portion RP1D) and the elastic modulus (E2) of the 2 nd resin portions F2A and F2B (E14 < E13 < E2). The melting point (Tm14) of the 4 th region R4 is lower than the melting point (Tm13) of the 3 rd region R3 and the melting points (Tm2) of the 2 nd resin portions F2A and F2B (Tm14 < Tm13 < Tm 2). Further, the loss tangent (tan δ 14) of the 4 th region R4 at the time of bending is higher than the loss tangent (tan δ 13) of the 3 rd region R3 and the loss tangent (tan δ 2) of the 2 nd resin portions F2A and F2B (tan δ 14 > tan δ 13 > tan δ 2).
Generally, when a resin base material is bent in the thickness direction (Z-axis direction), the outer side (surface layer) in the thickness direction of the resin base material expands and contracts more than the vicinity of the center (inner layer) in the thickness direction. In the present embodiment, the elastic modulus (E14) and the melting point (Tm14) of the 4 th region R4 (a portion that expands and contracts greatly when the resin base material is bent) located on the outer side in the thickness direction are lower than the elastic modulus (E13) and the melting point (Tm13) of the 3 rd region R3 located in the vicinity of the center in the thickness direction (E14 < E13, Tm14 < Tm 13). In the present embodiment, the loss tangent (tan δ 14) at the time of bending in the 4 th region R4 is higher than the loss tangent (tan δ 13) at the time of bending in the 3 rd region R3 (tan δ 14 > tan δ 13). Therefore, according to this configuration, the resin base material can be easily bent, and the occurrence of breakage and springback of the resin base material during bending can be suppressed.
In addition, although the example in which the 1 st resin part F1 is three-divided into the 3 rd region R3 and the two 4 th regions R4 is shown in the present embodiment, it is not necessary to clearly distinguish the 3 rd region R3 from the 4 th region R4. For example, the elastic modulus and the melting point (or the loss tangent) may be continuously changed (the elastic modulus and the melting point are gradually decreased, or the loss tangent is gradually increased) from the vicinity of the center of the 1 st resin part F1 in the thickness direction (Z-axis direction) toward the 1 st main surface S1 and the 2 nd main surface S2. In other words, the 1 st resin portion F1 may have a structure in which the elastic modulus and the melting point (or loss tangent) of the portion (surface layer) located outside in the thickness direction of the resin base material 10E are lower than those of the portion (inner layer) located at the center in the thickness direction (higher than the loss tangent of the portion located at the center in the thickness direction).
The resin substrate 106 according to the present embodiment may be manufactured by, for example, modifying each of a plurality of insulating base material layers before lamination, laminating the plurality of insulating base material layers, and heating and pressing the laminated insulating base material layers.
The resin substrate 106 may be produced by modifying a resin substrate formed by laminating a plurality of insulating substrate layers. In this case, a resin substrate in which the elastic modulus and the melting point gradually increase from the surface layer (the 1 st main surface S1 or the 2 nd main surface S2) subjected to plasma discharge, corona discharge, or UV treatment toward the inner layer according to the temperature distribution, the luminosity distribution, or the like can be easily obtained.
(7 th embodiment)
In embodiment 7, an example of a resin substrate provided with a plurality of transmission lines is shown.
Fig. 16 is a sectional view of a resin substrate 107 according to embodiment 7. Fig. 17 is an exploded plan view of the resin substrate 107. In fig. 16, in order to make the configuration easy to understand, a deteriorated portion RP1 is shown with cross-hatching.
The resin substrate 107 includes a resin base 10F, signal conductors 31 and 32, ground conductors 51 and 52, mounting electrodes P11, P12, P21 and P22, interlayer connection conductors V1, V2, V11, V12, V21, V22, a protective layer 1, and the like.
The resin substrate 10F is a rectangular parallelepiped resin blank having a longitudinal direction coinciding with the X-axis direction, and has a 1 st main surface S1 and a 2 nd main surface S2 facing each other. The resin base material 10F includes a 1 st resin part F1 at least a part of which is bent, and 2 nd resin parts F2A and F2B. The resin base material 10F has a modified portion RP1 in a part thereof. In the present embodiment, modified portion RP1 corresponds to 1 st resin portion F1.
The mounting electrodes P11, P12, P21, P22, and the protective layer 1 are formed on the 1 st main surface S1 of the resin base 10F. Mounting electrodes P11 and P21 are disposed in 2 nd resin portion F2A, and mounting electrodes P12 and P22 are disposed in 2 nd resin portion F2B. Inside the resin base 10F, the signal conductors 31 and 32, the ground conductors 51 and 52, and the interlayer connection conductors V1, V2, V11, V12, V21, and V22 are formed.
The resin base material 10F is formed by sequentially laminating a plurality of insulating base material layers 11, 12, and 13 mainly made of resin.
The ground conductor 51 and the mounting electrodes P11, P12, P21, and P22 are formed on the surface of the insulating base layer 11. The ground conductor 51 is a conductor pattern formed on substantially the entire surface of the insulating base layer 11. The mounting electrodes P11 and P21 are rectangular conductor patterns disposed near the 1 st end (right end of the insulating base material layer 11 in fig. 17) of the insulating base material layer 11. The mounting electrodes P12 and P22 are rectangular conductor patterns disposed near the 2 nd end (left end of the insulating base material layer 11 in fig. 17) of the insulating base material layer 11. The ground conductor 51 and the mounting electrodes P11, P12, P21, and P22 are conductor patterns such as Cu foil, for example.
Further, the insulating base layer 11 is formed with a plurality of interlayer connection conductors V1, V11, V12, V21, and V22.
Signal conductors 31 and 32 are formed on the surface of the insulating base layer 12. The signal conductors 31 and 32 are linear conductor patterns extending in the X-axis direction and are parallel to each other. The signal conductors 31 and 32 are conductor patterns such as Cu foils, for example. Further, a plurality of interlayer connection conductors V2 are formed on the insulating base layer 12.
A ground conductor 52 is formed on the surface of the insulating base layer 13. The ground conductor 52 is a conductor pattern formed on substantially the entire surface of the insulating base layer 13.
The protective layer 1 is a protective film laminated on the surface of the insulating base layer 11, and has substantially the same planar shape as the insulating base layer 11. The protective layer 1 has openings at positions corresponding to the positions of the mounting electrodes P11, P12, P21, and P22, respectively. Therefore, even when the protective layer 1 is formed on the surface of the insulating base layer 11 (the 1 st main surface S1 of the resin base 10F), the mounting electrodes P11, P12, P21, and P22 are exposed to the outside through the openings.
As shown in fig. 17 and the like, the mounting electrode P11 is connected to one end of the signal conductor 31 via the interlayer connection conductor V11. The other end of the signal conductor 31 is connected to the mounting electrode P12 via an interlayer connection conductor V12. Thus, the mounting electrodes P11, P12 are electrically connected. The mounting electrode P21 is connected to one end of the signal conductor 32 via the interlayer connection conductor V21. The other end of the signal conductor 32 is connected to the mounting electrode P22 via an interlayer connection conductor V22. Thus, the mounting electrodes P21, P22 are electrically connected. The ground conductors 51 and 52 are connected via interlayer connection conductors V1 and V2.
In the present embodiment, the 1 st transmission line having a strip line structure is configured to include the signal conductor 31, the ground conductors 51 and 52, the insulating base material layer 11 interposed between the signal conductor 31 and the ground conductor 51, and the insulating base material layer 12 interposed between the signal conductor 31 and the ground conductor 52. In the present embodiment, the 2 nd transmission line having a strip line structure is configured to include the signal conductor 32, the ground conductors 51 and 52, the insulating base layer 11 interposed between the signal conductor 32 and the ground conductor 51, and the insulating base layer 12 interposed between the signal conductor 32 and the ground conductor 52.
In the present embodiment, as shown in fig. 16 and 17, a plurality of interlayer connection conductors V1, V2, V11, V12, V21, and V22 are disposed in the 2 nd resin portions F2A and F2B.
When the interlayer connection conductor is disposed in the 1 st resin portion F1 of the resin base 10F, the interlayer connection conductor is easily broken due to bending stress at the time of bending the 1 st resin portion F1. In addition, the 1 st resin portion F1 having a relatively low melting point is likely to flow when heated and pressed. Therefore, if the interlayer connection conductor is disposed in the 1 st resin portion F1, the interlayer connection conductor may move with the flow of the resin during the heating and pressing, and a connection failure may occur between the interlayer connection conductor and the conductor pattern. On the other hand, in the present embodiment, since the plurality of interlayer connection conductors V1, V2, V11, V12, V21, and V22 are disposed in the 2 nd resin portions F2A and F2B, it is possible to suppress a connection failure between the interlayer connection conductors and the conductor patterns that occurs during heating and pressing, and also to suppress breakage of the interlayer connection conductors during bending.
Other embodiments
In the embodiments described above, the resin substrate is an example of a cable connecting two circuit substrates to each other, but the resin substrate of the present invention is not limited to this. The resin substrate of the present invention may be, for example, an electronic component surface-mounted on a single circuit board. Further, a connector may be provided in the connection portion (2 nd resin portion) of the resin substrate as necessary.
In the above-described embodiments, the resin base material is a rectangular flat plate, but the present invention is not limited to this configuration. The shape of the resin base material can be appropriately changed within the range that achieves the effects and effects of the present invention. The planar shape of the resin substrate may be, for example, an L-shape, a crank-shape, a T-shape, a Y-shape, or the like. In the above-described embodiments, the resin base material is bent in a crank shape, but the shape after bending is not limited to this. The resin base material may be bent into an L-shape or a U-shape, for example.
In the above-described embodiments, the resin base material in which 3 insulating base material layers 11, 12, and 13 are laminated is shown as an example, but the resin base material of the present invention is not limited to this. The number of layers of the insulating base material layer forming the resin base material may be appropriately changed within the range of the action and effect of the present invention, and may be, for example, a single layer. In the resin substrate of the present invention, the protective layer formed on the 1 st main surface S1 and the 2 nd main surface S2 of the resin base material is not essential.
In the embodiments described above, the resin base material is a flat plate mainly made of a thermoplastic resin, but the present invention is not limited to this configuration. The resin substrate may be a flat plate mainly made of a thermosetting resin. The resin base material may be a composite laminate of a plurality of resins. Further, the resin base material is not limited to a structure in which a plurality of insulating base material layers are heat-pressed (collectively pressed) and the surfaces thereof are welded to each other, and may be a structure in which an adhesive material layer is provided between the respective base material layers.
The circuit structure formed on the resin substrate is not limited to the structure of each embodiment described above, and can be appropriately modified within the scope of the operation and effect of the present invention. The circuit formed on the resin substrate may be formed with a frequency filter such as a coil formed of a conductor pattern, a capacitor formed of a conductor pattern, and various filters (a low-pass filter, a high-pass filter, a band-pass filter, and a band-stop filter). Further, other various transmission lines (microstrip lines, meander lines, coplanar lines, etc.) may be formed on the resin substrate. Further, various electronic components such as chip components may be mounted or embedded on the resin substrate.
In the embodiments described above, an example of a resin substrate having one or two transmission lines is shown, but the present invention is not limited to this configuration, and the number of transmission lines can be changed as appropriate depending on the circuit configuration formed on the resin substrate.
In the above-described embodiments, the rectangular mounting electrode is formed on the 1 st main surface S1 of the resin base material, but the present invention is not limited to this configuration. The shape, number, and position of the mounting electrodes can be appropriately changed within the range of the effects and effects of the present invention. The planar shape of the mounting electrode may be, for example, a polygon, a circle, an ellipse, an arc, a ring, an L shape, a U shape, a T shape, a Y shape, a crank shape, or the like. The mounting electrodes may be provided on the 1 st main surface S1 and the 2 nd main surface S2 of the resin base material, respectively.
Finally, the above description of the embodiments is illustrative in all respects and not restrictive. It is obvious to those skilled in the art that the modifications and variations can be appropriately made. The scope of the present invention is shown not by the above-described embodiments but by the claims. Further, the scope of the present invention includes modifications from the embodiments within a range equivalent to the claims.
Description of the reference numerals
EP1, EP2.. external electrodes of the circuit substrate;
a 1 st resin portion of the resin base material;
F2A, F2b.. the 2 nd resin portion of the resin base material;
h11, H21.. hole;
p1, P2, P11, P12, P21, P22.. mounting electrodes;
ps21.. the 1 st face of the circuit substrate;
ps22.. 2 nd surface of the circuit substrate;
r1.. 1. region;
r2.. 2 region;
r3.. 3 region;
r4.. 4 region;
RP1, RP1A, RP1B, RP1C, RP1D, RP1E, RP1F, RP11, RP2A, RP2B, RP21A, RP21B, RP22A, RP22B, RP23A, rp23b.
S1. the 1 st main surface of the resin substrate;
s2. the 2 nd main surface of the resin substrate;
v1, V2, V11, V12, V13, V21, V22, V23.. interlayer connection conductors;
1. a protective layer;
an upper mold;
a lower mold;
conductive bonding material;
10. 10A, 10B, 10C, 10D, 10E, 10f.. resin substrate;
an insulating substrate layer;
11. 12, 13.
A metal foil;
31. a signal conductor;
41. a conductor;
51. a ground conductor;
101. 101A, 102, 103A, 104, 105, 106, 107.
201. 202.. a circuit substrate;
301. an electronic device.

Claims (18)

1. A resin substrate is characterized by comprising:
a resin base material having a 1 st resin portion at least a part of which is bent and a 2 nd resin portion different from the 1 st resin portion,
the 1 st resin portion has a lower elastic modulus than the 2 nd resin portion,
the melting point of the 1 st resin part is lower than that of the 2 nd resin part,
the resin substrate further includes:
a conductor pattern formed on the resin base material; and
a plurality of interlayer connection conductors formed on the resin base material and connected to the conductor patterns,
the plurality of interlayer connection conductors are disposed in the 2 nd resin portion.
2. The resin substrate according to claim 1,
the resin base material has a 1 st main surface and a 2 nd main surface opposed to each other,
an interface between the 1 st resin part and the 2 nd resin part is inclined with respect to the 1 st main surface and the 2 nd main surface.
3. The resin substrate according to claim 1 or 2,
the number of the 2 nd resin part is a plurality,
the resin base material is provided with the 2 nd resin part, the 1 st resin part and the 2 nd resin part in this order in a plane direction orthogonal to a thickness direction of the resin base material,
the resin base material has a 1 st region adjacent to the 2 nd resin portion and a 2 nd region distant from the 2 nd resin portion when the 1 st resin portion is three-divided in the plane direction,
the elastic modulus of the 1 st region is higher than that of the 2 nd region and lower than that of the 2 nd resin portion.
4. The resin substrate according to claim 3,
the 1 st resin portion has a higher elastic modulus at a portion located outside the resin base material in the plane direction than at a portion located closer to the center in the plane direction.
5. The resin substrate according to claim 4,
the melting point of a portion of the 1 st resin portion located outside the resin base material in the planar direction is higher than the melting point of a portion located closer to the center in the planar direction.
6. The resin substrate according to claim 3,
the melting point of the 1 st region is higher than the melting point of the 2 nd region and lower than the melting point of the 2 nd resin portion.
7. The resin substrate according to claim 1 or 2,
the resin base material has a 3 rd region located at the center in the thickness direction and a 4 th region located further outside in the thickness direction than the 3 rd region when the 1 st resin portion is three-divided in the thickness direction of the resin base material,
the elastic modulus of the 4 th region is lower than that of the 3 rd region.
8. The resin substrate according to claim 7,
the elastic modulus of a portion of the 1 st resin portion located outside the resin base material in the thickness direction is lower than the elastic modulus of a portion located closer to the center in the thickness direction.
9. The resin substrate according to claim 8,
the melting point of a portion of the 1 st resin portion located outside the resin base material in the thickness direction is lower than the melting point of a portion located at the center in the thickness direction.
10. The resin substrate according to claim 1,
the resin base material is formed by laminating a plurality of base material layers mainly composed of a thermoplastic resin.
11. A resin substrate is characterized by comprising:
a resin base material having a 1 st resin portion at least a part of which is bent and a 2 nd resin portion different from the 1 st resin portion,
the 1 st resin portion has a loss tangent higher than that of the 2 nd resin portion when bending is performed.
12. The resin substrate according to claim 11,
the number of the 2 nd resin part is a plurality,
the resin base material is provided with the 2 nd resin part, the 1 st resin part and the 2 nd resin part in this order in a plane direction orthogonal to a thickness direction of the resin base material,
the resin base material has a 1 st region adjacent to the 2 nd resin portion and a 2 nd region distant from the 2 nd resin portion when the 1 st resin portion is three-divided in the plane direction,
the loss tangent of the 1 st region is lower than the loss tangent of the 2 nd region and is higher than the loss tangent of the 2 nd resin portion.
13. The resin substrate according to claim 12,
the 1 st resin portion has a loss tangent lower in a portion located outside in the planar direction of the resin base material than in a portion located closer to the center in the planar direction.
14. The resin substrate according to any one of claims 11 to 13,
the resin base material has a 3 rd region located at the center in the thickness direction and a 4 th region located further outside in the thickness direction than the 3 rd region when the 1 st resin portion is three-divided in the thickness direction of the resin base material,
the loss tangent of the 4 th region is higher than the loss tangent of the 3 rd region.
15. The resin substrate according to claim 14,
the 1 st resin portion has a loss tangent higher at a portion located outside in the thickness direction of the resin base material than at a portion located closer to the center in the thickness direction.
16. The resin substrate according to any one of claims 11 to 13, comprising:
a conductor pattern formed on the resin base material; and
a plurality of interlayer connection conductors formed on the resin base material and connected to the conductor patterns,
the plurality of interlayer connection conductors are disposed in the 2 nd resin portion.
17. The resin substrate according to claim 11,
the resin base material is formed by laminating a plurality of base material layers mainly composed of a thermoplastic resin.
18. An electronic device is characterized by comprising:
the resin substrate of any one of claims 1 to 17; and
a circuit board connected to the resin substrate in a state where the 1 st resin portion is bent,
the resin substrate further includes a mounting electrode formed on a main surface of the 2 nd resin portion,
the mounting electrode is connected to the circuit board via a conductive bonding material.
CN201990000895.5U 2018-08-30 2019-08-27 Resin substrate and electronic device Active CN214544897U (en)

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JP2018-161033 2018-08-30
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Publication number Priority date Publication date Assignee Title
JP2004266074A (en) * 2003-02-28 2004-09-24 Olympus Corp Wiring board
JP5195422B2 (en) * 2006-03-31 2013-05-08 日本電気株式会社 Wiring board, mounting board, and electronic device
JP6044592B2 (en) * 2014-05-29 2016-12-14 トヨタ自動車株式会社 Multilayer wiring board and manufacturing method thereof
JP2017110217A (en) * 2015-12-11 2017-06-22 Jsr株式会社 Sheet, substrate, and manufacturing method of sheet

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