CN214327879U

CN214327879U - Deformable electrode plate, electrode structure and chemical vapor deposition equipment

Info

Publication number: CN214327879U
Application number: CN202022619617.5U
Authority: CN
Inventors: 不公告发明人
Original assignee: Xuancheng Ruihui Xuansheng Enterprise Management Center Partnership LP
Current assignee: Xuancheng Ruihui Xuansheng Enterprise Management Center Partnership LP
Priority date: 2020-11-12
Filing date: 2020-11-12
Publication date: 2021-10-01
Anticipated expiration: 2030-11-12

Abstract

The embodiment of the application provides a deformable electrode plate, an electrode structure and chemical vapor deposition equipment, and belongs to the technical field of chemical vapor deposition. The deformable electrode plate specifically comprises a substrate bearing area and an edge area, wherein the edge area surrounds the substrate bearing area, the edge area comprises a first edge and a second edge, and the second edge is detachably and fixedly connected with the first edge. By optimizing the structure of the electrode plate, the appearance structure of the electrode plate can be adjusted according to different deposition process conditions, so that the condition that the thickness of a large-area deposited film is not uniform due to the reasons that the distribution of process gas in a substrate bearing area is not uniform and the like is improved.

Description

Deformable electrode plate, electrode structure and chemical vapor deposition equipment

Technical Field

The application relates to the technical field of chemical vapor deposition, in particular to a deformable electrode plate, an electrode structure and chemical vapor deposition equipment.

Background

Pecvd (plasma Enhanced Chemical Vapor deposition) refers to a plasma-Enhanced Chemical Vapor deposition method in which a gas containing atoms of a thin film component is ionized locally by microwaves, radio frequencies, or the like to form plasma, and a thin film having a desired thickness is deposited on a substrate by utilizing the characteristic that the plasma has strong Chemical activity and is likely to react. When the PECVD apparatus performs the reaction chamber process coating, a coating deposition method between an upper electrode and a lower electrode is generally adopted, that is: after the process gas is introduced, a certain radio frequency power is applied to the upper electrode, a plasma enhanced chemical vapor deposition reaction occurs between the upper electrode and the lower electrode, and a film after the reaction is deposited on the substrate of the lower electrode.

In the prior art, the shapes of the upper electrode and the lower electrode are usually regular square shapes, and due to different film deposition process conditions, the distribution of process gases in the middle area and the edge area of the electrode is different, so that the condition that the thickness of a film layer deposited on a substrate is not uniform frequently occurs when large-area film deposition is performed.

Disclosure of Invention

Embodiments of the present disclosure provide a deformable electrode plate, an electrode structure and a chemical vapor deposition apparatus, which at least partially solve the problems of the prior art.

The technical scheme specifically comprises the following steps:

a deformable electrode plate comprising a substrate carrying region and an edge region, the edge region surrounding the substrate carrying region, the edge region comprising a first edge and a second edge, wherein the second edge is removably fixedly attached to the first edge.

Preferably, the substrate carrying area is a square structure, the first edge surrounds the outside of the substrate carrying area, and the shape of the inside of the first edge is matched with the shape of the outside of the substrate carrying area.

Preferably, the edge region is a hollow square structure, the first edge is located at the inner side of the edge region, the second edge is located at the outer side of the edge region, and the second edge forms four corners of the square structure.

Preferably, the second edge comprises a first compensation piece, the first compensation piece is in a triangular structure, and the first compensation piece is detachably and fixedly connected with the first edge.

Preferably, the second edge further comprises a second compensation member, the first compensation member is in a right triangle structure, and the second compensation member is detachably fixed on two right-angle sides of the first compensation member.

Preferably, the first compensation piece is detachably and fixedly connected with the first edge through the hypotenuse of the right triangle structure.

Preferably, the substrate bearing area is in a square structure or a circular structure or a triangular structure.

An electrode structure comprises an upper electrode plate and a lower electrode plate, wherein the lower electrode plate adopts the deformable electrode plate, and the upper electrode plate is provided with a through hole through which gas can pass.

The chemical vapor deposition equipment comprises the electrode structure and a process chamber, wherein the electrode structure is arranged in the process chamber, an air inlet and an air outlet are formed in the process chamber, an upper electrode plate is close to the air inlet and placed, and a lower electrode plate is close to the air outlet.

Preferably, the device further comprises a vacuum pump, wherein the vacuum pump is connected with the exhaust port through a vacuum pipeline.

The beneficial effects of the above technical scheme are that:

the deformable electrode plate, the electrode structure and the chemical vapor deposition equipment are provided, the electrode plate structure is optimized, the appearance structure of the electrode plate can be adjusted according to different deposition process conditions, and the condition that the thickness of a large-area deposition film layer is not uniform due to the reason that process gas is not uniformly distributed in a substrate bearing area and the like is improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1-2 are schematic structural views of a deformable electrode plate according to a preferred embodiment of the present invention;

FIG. 3 is a schematic view of a chemical vapor deposition apparatus according to a preferred embodiment of the present invention;

the above reference numerals denote descriptions:

1-substrate bearing area, 2-first edge, 3-second edge, 30-first compensation piece, 31-second compensation piece, 4-substrate, 5-upper electrode plate, 6-lower electrode plate, 7-process chamber, 8-air inlet and 9-air outlet.

Detailed Description

The embodiments of the present application will be described in detail below with reference to the accompanying drawings.

The following description of the embodiments of the present application is provided by way of specific examples, and other advantages and effects of the present application will be readily apparent to those skilled in the art from the disclosure herein. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. The present application is capable of other and different embodiments and its several details are capable of modifications and/or changes in various respects, all without departing from the spirit of the present application. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

It is noted that various aspects of the embodiments are described below within the scope of the appended claims. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is merely illustrative. Based on the present application, one skilled in the art should appreciate that one aspect described herein may be implemented independently of any other aspects and that two or more of these aspects may be combined in various ways. For example, an apparatus may be implemented and/or a method practiced using any number of the aspects set forth herein. Additionally, such an apparatus may be implemented and/or such a method may be practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.

It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present application, and the drawings only show the components related to the present application rather than the number, shape and size of the components in actual implementation, and the type, amount and ratio of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.

In addition, in the following description, specific details are provided to facilitate a thorough understanding of the examples. However, it will be understood by those skilled in the art that the aspects may be practiced without these specific details.

Aiming at solving the problem that the thickness of a middle film layer and the thickness of peripheral film layers generated when a large-surface film layer is deposited by PECVD equipment are different, on one hand, the problem of uneven film thickness can be solved by adjusting coating process parameters, and on the other hand, the problem can be solved by matching with a hardware structure of an improved process area, so that the improvement effect is more obvious.

As a preferred embodiment, a deformable electrode plate is provided, as shown in fig. 1, which comprises a substrate carrying region 1 and an edge region, the edge region surrounding the substrate carrying region 1, the edge region comprising a first edge 2 and a second edge 3, wherein the second edge 3 is detachably and fixedly connected to the first edge 2.

Specifically, in this embodiment, the substrate carrying region 1 in the electrode plate is used for holding the substrate 4 to be deposited with the film layer, and the edge region is disposed around the substrate carrying region 1, wherein the edge region and the substrate carrying region 1 together form the whole electrode plate. The edge region is in turn divided into a first edge 2 and a second edge 3, wherein the first edge 2 and the second edge 3 are detachably fixedly connected. In one embodiment, the detachable fit may be performed by means of a protrusion and a groove, for example, a groove is provided on the first edge 2, a protrusion is provided on the second edge 3 to fit the groove, and the first edge 2 and the second edge 3 are locked together by means of the protrusion and the groove. When the second edge 3 is not needed, the two can be easily separated, and the flexibility of the device is increased. In particular, the detachable connection of the first edge 2 and the second edge 3 can be achieved by means of the prior art, and this embodiment is only one example, and is not limited thereby.

In the preferred embodiment of the present invention, the substrate carrying region 1 has a square structure, and the first edge 2 surrounds the substrate carrying region 1 and has an inner shape matching with the outer shape of the substrate carrying region 1.

In the preferred embodiment of the present invention, the first edge 2 surrounds the substrate-supporting region 1, and the second edge 3 forms four corners of a square structure.

Specifically, in this embodiment, the edge region is a square or rectangular structure, and the first edge 2 is located inside the edge region, connected to the substrate carrying region 1, and located at the periphery of the substrate carrying region 1. The second edge 3 forms the four corners of a square structure and is detachably connected to the first edge 2.

In the preferred embodiment of the present invention, the second edge 3 comprises a first compensation member 30, the first compensation member 30 is a triangular structure, and the first compensation member 30 is detachably and fixedly connected to the first edge 2.

In the preferred embodiment of the present invention, the second edge 3 further comprises a second compensation member 31, the first compensation member 30 is in a right triangle structure, the second compensation member 31 is detachably fixed on two right-angled sides of the first compensation member 30, and the first compensation member 30 is detachably and fixedly connected with the first edge 2 through a hypotenuse of the right triangle structure.

In particular, in this embodiment, the second edge 3 further comprises a first compensator 30 and a second compensator 31, wherein the first compensator 30 is detachably connected with the first edge 2. In a specific embodiment, the edge region has a square or rectangular structure, the first compensation element 30 forms four corners of the edge region, and the first edge 2 has a square-chamfered shape, as shown in fig. 2, which is a schematic structural view of the deformable electrode plate with only the first edge 2. Wherein the first compensation piece 30 is a right triangle structure, the bevel edge of the first compensation piece 30 is matched with the corner cut of the first edge 2, specifically, the bevel edge of the first compensation piece 30 can be designed into a convex block structure, the corner cut of the first edge 2 can be designed into a groove structure, and the groove and the convex block are detachably and fixedly connected through clamping.

The second compensation member 31 is an extension of the first compensation member 30. in one embodiment of the present invention, the second compensation member 31 can be provided in the form of a boss, i.e. a boss is formed at two right-angle sides of the first compensation member 30 by matching with the first compensation member 30, so as to block the flow of the process gas. In another embodiment of the present invention, the second compensation element 31 can be flush with the first compensation element 30 to increase the area of the first compensation element 30 by detachable engagement. The second compensation part 31 can be connected with the first compensation part 30 in a detachable and fixed manner by matching the groove and the projection.

In the preferred embodiment of the present invention, the substrate carrying region 1 has a square structure, a circular structure or a triangular structure.

Specifically, in this embodiment, the shape of the substrate carrying area 1 may be specifically set according to specific needs, and may be a regular pattern such as a square structure, a circular structure, or a triangular structure, or may be other irregular patterns, which is not limited herein.

An electrode structure comprises an upper electrode plate 5 and a lower electrode plate 6, as shown in fig. 3, the lower electrode plate 6 adopts the deformable electrode plate, and the upper electrode plate 5 is provided with a through hole for gas to pass through.

A chemical vapor deposition device, as shown in FIG. 3, comprises the electrode structure, and further comprises a process chamber 7, wherein the electrode structure is arranged in the process chamber 7, the process chamber 7 is provided with an air inlet 8 and an air outlet 9, the upper electrode plate 5 is arranged near the air inlet 8, and the lower electrode plate 6 is arranged near the air outlet 9. Wherein, the device also comprises a vacuum pump which is connected with the exhaust port 9 through a vacuum pipeline.

Specifically, in the above embodiment, fig. 3 is a cross-sectional view of the internal structure of the process chamber 7 in the chemical vapor deposition apparatus, when performing a PECVD deposition coating process, a process gas is injected from the upper portion of the upper electrode, a certain radio frequency power is applied to the upper electrode, under a certain process condition, a plasma enhanced chemical vapor deposition reaction occurs between the upper electrode and the lower electrode, and a reaction-deposited film is deposited on the substrate 4 placed on the lower electrode. In fig. 3, the gas flow direction of the process gas is shown, and the process residual gas after reaction is collected to the bottom of the process chamber 7 through the periphery of the lower electrode along the arrow direction, passes through the exhaust port 9 at the center of the bottom, and the exhaust port 9 is finally exhausted out of the vacuum chamber through the connected vacuum pipeline and vacuum pump.

In the chemical vapor deposition reaction process, according to the difference of deposition process conditions, the situation that the film thickness is uneven is different, for example, when a large amount of process gas is injected according to the process requirements, the situation that the gas entering from the gas inlet 8 cannot be diffused into the whole substrate bearing area 1 in time to carry out chemical reaction can occur, so that the gas concentration of the process area right below the gas inlet 8 is far greater than the gas concentration around, and the thickness of the deposition film layer in the middle area is far greater than the thickness of the film layer around under the condition that the gas is fully reacted. Or the amount of gas injected from the gas inlet 8 is not enough to ensure that the whole substrate carrying region 1 fully performs the PECVD reaction, the peripheral gas is more the residual mixed gas after the reaction of the process gas and the reactant, the gases are not enough to meet the requirement that the thickness of the peripheral film layer is the same as the thickness of the middle film layer, and the situation that the peripheral film layer is thick and thin can also occur.

The utility model discloses in, compare the bottom plate electrode 6 that is square structure among the prior art, through adopting deformable plate electrode, increase at four edges of bottom electrode and install some constructional device that make the bottom electrode area increase, promptly the utility model provides a second compensator 31 leads to gaseous exhaust passage of process to reduce to make the gas flow lead and reduce, this kind of structure can delay the air exhaust speed of system, can let the process gas in the time extension of the process reaction of four edges of bottom electrode in other words, let gas have more abundant reaction time in four edges, have very big help to improving rete homogeneity. Under another process condition, the second edge 3 of the lower electrode plate 6 is removed, so that the exhaust passage of the process gas is enlarged, and further the gas conductance is increased.

Specifically, in practical applications, the shape of the lower electrode plate 6 may be specifically adjusted according to specific process conditions, for example, as shown in fig. 2, the lower electrode plate 6 when the second edge 3 is removed; it is also possible to use the lower electrode plate 6 including only the first compensation member 30, i.e., the square lower electrode plate 6; it is also possible to employ the lower electrode plate 6, as shown in fig. 1, which entirely includes the first compensation member 30 and the second compensation member 31; by adopting the lower electrode plates 6 with different shapes, the exhaust channel of the PECVD equipment is dynamically adjusted, and further the process gas conductance is adjusted, so that the uniformity of the film layer is improved. In practical application, the method greatly helps to improve the nonuniformity of the film layer, and the uniformity between the sheets and the uniformity in the sheets can be improved to be within 5 percent from the original 15 to 40 percent.

The beneficial effects of the above technical scheme are that:

The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A deformable electrode plate comprising a substrate carrying region and an edge region, said edge region surrounding said substrate carrying region, said edge region comprising a first edge and a second edge, wherein said second edge is removably fixedly attached to said first edge.

2. The deformable electrode plate of claim 1, wherein the substrate carrying region is a square structure, the first edge surrounds the outside of the substrate carrying region, and the shape of the inside of the first edge is matched with the shape of the outside of the substrate carrying region.

3. The deformable electrode plate of claim 1, wherein the edge region is a hollow square structure, the first edge is located inside the edge region, the second edge is located outside the edge region, and the second edge constitutes four corners of the square structure.

4. The deformable electrode plate of claim 3, wherein the second edge comprises a first compensator having a triangular configuration, the first compensator being removably and fixedly coupled to the first edge.

5. The deformable electrode plate of claim 4, wherein the second edge further comprises a second compensator, the first compensator is in a right triangle configuration, and the second compensator is detachably fixed to two right-angled sides of the first compensator.

6. The deformable electrode plate of claim 5, wherein the first compensator is removably fixedly connected to the first edge by a hypotenuse of the right triangle configuration.

7. The deformable electrode plate of claim 1, wherein the substrate bearing region has a square configuration, a circular configuration, or a triangular configuration.

8. An electrode structure, comprising an upper electrode plate and a lower electrode plate, wherein the lower electrode plate is the deformable electrode plate as claimed in any one of claims 1 to 7, and the upper electrode plate is provided with a through hole for gas to pass through.

9. A chemical vapor deposition apparatus comprising the electrode structure of claim 8, and further comprising a process chamber, wherein the electrode structure is disposed in the process chamber, wherein the process chamber is configured with an air inlet and an air outlet, wherein the upper electrode plate is disposed adjacent to the air inlet, and wherein the lower electrode plate is disposed adjacent to the air outlet.

10. The chemical vapor deposition apparatus of claim 9, further comprising a vacuum pump connected to the exhaust port by a vacuum line.