CN214244666U - Heat exchange device and single crystal furnace - Google Patents
Heat exchange device and single crystal furnace Download PDFInfo
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- CN214244666U CN214244666U CN202021876745.1U CN202021876745U CN214244666U CN 214244666 U CN214244666 U CN 214244666U CN 202021876745 U CN202021876745 U CN 202021876745U CN 214244666 U CN214244666 U CN 214244666U
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Abstract
The utility model provides a heat transfer device and single crystal growing furnace for grow single crystal silicon rod, include: the heat exchange cylinder is provided with a flow guide part at one end close to the liquid level of the molten silicon, the inner wall of the flow guide part and the central shaft of the heat exchange cylinder form a preset included angle, and the cross section area of the flow guide part is smaller than or equal to that of the heat exchange cylinder; be provided with the water conservancy diversion passageway on the inner wall of water conservancy diversion portion, the water conservancy diversion passageway is followed the inside of heat transfer section of thick bamboo to the silicon melt liquid level extends the utility model discloses in, the speed that the crystallization latent heat of silicon melt liquid level distributes is very fast, can build good growing environment for the single crystal silicon rod fast and stable growth reduces the preparation cost of single crystal silicon rod.
Description
Technical Field
The utility model relates to a czochralski method single crystal manufacturing technical field, in particular to a heat exchange device and a single crystal furnace.
Background
Photovoltaic power generation is increasingly valued by countries in the world and is vigorously developed as a green energy source and one of the main energy sources for sustainable development of human beings. The monocrystalline silicon slice is used as a basic material of photovoltaic power generation and has wide market demand, the monocrystalline silicon rod pulled by the Czochralski method is a common monocrystalline manufacturing method at present, the monocrystalline silicon rod vertically grows upwards from the liquid level of molten silicon in the pulling process, the monocrystalline silicon rod reaches a stretching cavity of a secondary chamber through a heat shield and a heat exchanger in the growing process, and the heat exchanger mainly has the functions of absorbing latent heat of crystallization emitted by the monocrystalline rod, inhibiting overhigh temperature in the monocrystalline furnace, creating a good growing environment for the monocrystalline silicon rod and keeping the monocrystalline silicon rod at a high growing speed for a long time.
However, the conventional heat exchanger has low heat exchange efficiency, which causes a slow growth rate of the single crystal silicon rod, and the slow growth rate of the single crystal silicon rod easily causes an increase in the preparation cost of the single crystal silicon rod.
SUMMERY OF THE UTILITY MODEL
In view of the above, the present invention has been made to provide a heat exchanging device and a single crystal furnace which overcome the above problems or at least partially solve the above problems.
In order to solve the above problem, in a first aspect, the utility model discloses a heat exchange device for growing single crystal silicon rod, include: the heat exchange cylinder is provided with a flow guide part at one end close to the liquid level of the molten silicon, the inner wall of the flow guide part and the central shaft of the heat exchange cylinder form a preset included angle, and the cross section area of the flow guide part is smaller than or equal to that of the heat exchange cylinder; and a flow guide channel is arranged on the inner wall of the flow guide part, and extends from the inside of the heat exchange cylinder to the molten silicon liquid level.
Optionally, the number of the flow guide channels is multiple, and the flow guide channels are arranged at intervals along the circumferential direction of the inner wall of the flow guide part.
Optionally, the flow guide channel comprises a first port and a second port which are opposite, and the second port is close to the molten silicon liquid level;
the second port is flush with one end, close to the molten silicon liquid level, of the flow guide part.
Optionally, the cross-sectional area of the flow guide channel decreases in a direction from the first port to the second port.
Optionally, the preset included angle is 0-40 °.
Optionally, the cross-sectional shape of the flow guide channel is polygonal.
Optionally, the material of the flow guide channel is stainless steel.
Optionally, the flow guide channel is welded to the flow guide portion.
Optionally, the heat exchange device further comprises: the outer wall surrounds the heat exchange cylinder, a water cooling cavity is formed between the outer wall and the heat exchange cylinder, and a cooling pipeline is arranged in the water cooling cavity;
a water inlet and a water outlet are formed in one end, far away from the flow guide part, of the outer wall;
the water inlet is communicated with the cooling pipeline and is used for guiding water into the cooling pipeline;
the water outlet is communicated with the cooling pipeline and used for leading water out of the cooling pipeline.
In a second aspect, the utility model discloses still include a single crystal growing furnace for grow single crystal silicon rod, single crystal growing furnace includes draft tube and above-mentioned heat transfer device, the heat transfer device cover is established in the draft tube.
The utility model discloses a following advantage:
in the utility model, the heat exchange cylinder is provided with a flow guiding part at one end close to the liquid level of the silicon melt, the inner wall of the flow guiding part and the central shaft of the heat exchange cylinder form a preset included angle, the cross-sectional area of the flow guiding part is smaller than or equal to the cross-sectional area of the heat exchange cylinder, furthermore, the flow guiding part can guide the gas in the heat exchange cylinder to be discharged to the liquid level of the silicon melt from the flow guiding part, and the gas can take away the latent heat of crystallization emitted from the growth interface of the single crystal silicon rod in the process of leaving the liquid level of the silicon melt, furthermore, a flow guiding channel is further arranged on the inner wall of the flow guiding part, the flow guiding channel extends from the inside of the heat exchange cylinder to the liquid level of the silicon melt, the flow guiding channel can guide the gas in the heat exchange cylinder to the liquid level of the silicon melt in a directional manner, so that the flowing speed of the gas is accelerated, the speed of the latent heat of crystallization emitted from the growth interface of the single crystal silicon rod is accelerated, thereby creating a good growth environment for the single crystal silicon rod, the silicon single crystal rod can grow rapidly and stably, and the preparation cost of the silicon single crystal rod is reduced due to the fact that the growth speed of the silicon single crystal rod is high.
Drawings
Fig. 1 is a schematic structural diagram of a heat exchange device of the present invention;
fig. 2 is a partial enlarged view of the present invention at a in fig. 1;
fig. 3 is a schematic structural view of a flow guide channel of the present invention;
fig. 4 is a schematic structural view of a heat exchange device according to the present invention in a use state;
fig. 5 is a partial enlarged view of the present invention at b in fig. 4;
description of reference numerals:
100-heat exchange device, 10-heat exchange cylinder, 11-outer wall, 12-flow guide part, 13-water cooling cavity, 14-water inlet, 15-water outlet, 16-cooling pipeline, 20-flow guide channel, 21-first port, 22-second port, 30-single crystal silicon rod and theta-preset included angle.
Detailed Description
In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description.
In practical application, a czochralski method is usually used for pulling a silicon single crystal rod in a single crystal melting furnace, and the silicon single crystal rod vertically grows from a molten liquid level upwards in the pulling process, so that a large amount of latent heat of crystallization is easily generated in the crystallization process of the silicon single crystal rod, and a good growth environment can be provided for the silicon single crystal rod only by timely absorbing the latent heat of crystallization of a growth interface of the silicon single crystal rod, so that the growth speed of the silicon single crystal rod is further improved.
Referring to fig. 1, which shows a schematic structural diagram of a heat exchange device of the present invention, as shown in fig. 1, a heat exchange device 100 may be used for growing a single crystal silicon rod 30, and specifically may include a heat exchange cylinder 10, one end of the heat exchange cylinder 10 near a liquid level of molten silicon may be provided with a flow guide portion 12, an inner wall of the flow guide portion 12 may form a preset included angle with a central axis of the heat exchange cylinder 10, and a cross-sectional area of the flow guide portion 12 may be less than or equal to a cross-sectional area of the heat exchange cylinder 10; the inner wall of the guide part 12 may be provided with a guide passage 20, and the guide passage 20 may extend from the inside of the heat exchange cylinder 10 to the molten silicon level.
In the embodiment of the present invention, the heat exchange cylinder 10 is provided with the flow guiding portion 12 at one end close to the liquid level of the silicon melt, and the inner wall of the flow guiding portion 12 and the central axis of the heat exchange cylinder 10 form a preset included angle, the cross-sectional area of the flow guiding portion 12 is smaller than or equal to the cross-sectional area of the heat exchange cylinder 10, and further, the flow guiding portion 12 can guide the gas in the heat exchange cylinder 10 to be discharged from the flow guiding portion 12 to the liquid level of the silicon melt, and the gas can take away the latent heat of crystallization emitted from the growth interface of the single crystal silicon rod 30 in the process of leaving the liquid level of the silicon melt, further, the inner wall of the flow guiding portion 12 is further fixed with the flow guiding channel 20, the flow guiding channel 20 extends from the inside of the heat exchange cylinder 10 to the liquid level of the silicon melt, the flow guiding channel 20 can guide the gas in the heat exchange cylinder 10 to the liquid level of the silicon melt, so that the gas flows faster, and the speed of the latent heat of crystallization emitted from the growth interface of the single crystal silicon rod 30 is faster, thereby creating a good growth environment for the single crystal silicon rod 30, so that the single crystal silicon rod 30 can be rapidly and stably grown, and the preparation cost of the single crystal silicon rod 30 is reduced due to the rapid growth speed of the single crystal silicon rod 30.
On the other hand, in the process of exhausting the gas from the molten silicon liquid surface, a large amount of oxygen atoms can be taken away, so that the oxygen atoms can be prevented from generating silicon oxide on the growth interface of the single crystal silicon rod 30, and the quality of the single crystal silicon rod 30 is improved.
In practical application, inert gas may be introduced into the heat exchange cylinder 10 to prevent the gas from generating a chemical reaction at the growth interface of the single crystal silicon rod 30 to affect the quality of the single crystal silicon rod 30, and specifically, since the price of argon gas is relatively low, argon gas may be optionally introduced into the heat exchange cylinder 10.
Referring to fig. 2, which shows a partial enlarged view of a in fig. 1 of the present invention, as shown in fig. 2, the number of the flow guide channels 20 may be multiple, and the multiple flow guide channels 20 are arranged along the circumferential direction of the inner wall of the flow guide portion 12 at intervals.
In practical application, a plurality of flow guide channels 20 can be arranged, so that the flow guide speed of gas in the heat exchange cylinder 10 is increased, and the plurality of flow guide channels 20 are arranged along the circumferential direction of the inner wall of the flow guide part 12, so that the stability of the structure of the heat exchange device 100 can be improved. In order to fix the flow guide channel 20 on the inner wall of the flow guide part 12 without damaging the structure of the flow guide channel 20, a plurality of flow guide channels 20 may be arranged at intervals.
Referring to fig. 3, which shows a schematic structural view of a diversion channel of the present invention, referring to fig. 4, which shows a schematic structural view of a heat exchange device of the present invention in a use state, referring to fig. 5, which shows a partial enlarged view of b in fig. 4 of the present invention, as shown in fig. 3, 4 and 5, the diversion channel 20 may include a first port 21 and a second port 22 opposite to each other, and the second port 22 may be disposed near the molten silicon liquid level; the second port 22 may be flush with an end of the flow guide 12 near the surface of the molten silicon.
The embodiment of the utility model provides an in, the first port 21 of water conservancy diversion passageway 20 sets up towards the inside of heat-transfer cylinder 10, can be with the gas drainage in the heat-transfer cylinder 10 to the water conservancy diversion passageway 20 in, the second port 22 of water conservancy diversion passageway 20 is close to the setting of fused silicon liquid level, and then arranges the gas in the water conservancy diversion passageway 20 to the fused silicon liquid level to take away the crystallization latent heat at single crystal silicon rod 30 growth interface. The second port 22 is flush with the end of the diversion part 12 close to the molten silicon liquid level, so that the diversion part 12 can exert a diversion effect with the diversion channel 20 at the same time, and further the speed of gas flowing to the molten silicon liquid level is accelerated.
Specifically, both ends of the diversion channel 20 can be arranged in parallel and level with both ends of the diversion part 12, and the first port of the diversion channel 20 and one end of the diversion part 12 far away from the molten silicon liquid level are arranged in parallel and level, so that the diversion channel 20 can be prevented from colliding with the inner wall of the heat exchange cylinder 10.
In practical applications, the height of the flow guide portion 12 in the axial direction thereof may be 19 to 20 mm, and the flow guide passage 20 may be set with reference to the size of the flow guide portion 12.
Alternatively, the cross-sectional area of the guide passage 20 may be sequentially decreased in the direction from the first port 21 to the second port 22. In practical application, because the cross-sectional area of the flow guide channel 20 decreases gradually along the direction from the first port 21 to the second port 22, the flow guide channel 20 can continuously guide the gas in the heat exchange cylinder 10 to be discharged to the liquid level of the molten silicon, and further the heat dissipation speed of the latent heat of crystallization at the growth interface of the single crystal silicon rod 30 is increased.
Alternatively, the preset included angle may be 0-40 °. Specifically, as shown in fig. 4, a preset included angle θ may be formed between the inner wall of the flow guide portion 12 and the central axis of the heat exchange cylinder 10, and the size of θ may be 0 to 40 °, so that the flow guide portion 12 may have a certain inclination angle, and further, the gas in the heat exchange cylinder 10 may be better guided.
In practical application, under the condition of drawing a large-sized single crystal silicon rod 30, the size of the preset included angle can be adjusted to 0 degree, so that the inner wall of the flow guide part 12 is parallel to the central axis of the heat exchange cylinder 10, the opening of the flow guide part 12 is large, and the gas flows fast. Under the condition of drawing the single crystal silicon rod 30 with smaller size, the size of the preset included angle can be adjusted to 39-40 degrees, so that the flow guide part 12 has a certain inclination angle, gas in the heat exchange cylinder 10 can be well guided to the liquid level of the molten silicon, and the diffusion of latent heat of crystallization is accelerated. The size of predetermineeing the contained angle specifically can be suitably adjusted according to the actual demand, the utility model discloses do not specifically prescribe a limit.
Alternatively, the cross-sectional shape of the guide passage 20 may be polygonal, so that the guide passage 20 may be fixed to the inner wall of the guide portion 12 through one side surface, which may improve the stability of the fixed connection between the guide passage 20 and the guide portion 12.
In practical applications, the cross-sectional shape of the flow guide channel 20 may be a quadrangle, the side surface of the flow guide channel 20 may be enclosed by a plurality of parallelograms, and at this time, the central axis of the flow guide channel 20 may be parallel to the inner wall of the flow guide portion 12. Or, the side of the diversion channel 20 can be enclosed by a plurality of irregular quadrangles, and the embodiment of the present invention is not limited specifically. As shown in fig. 2, the embodiment of the present invention only provides a case that the cross-sectional shape of the diversion channel 20 is quadrilateral, specifically, the cross-sectional shape of the diversion channel 20 can also be triangle, pentagon, hexagon, etc., or other irregular special-shaped cross-sections, which is not limited by the present invention.
Optionally, the material of the flow guide channel 20 may be a stainless steel material, so that the structure of the flow guide channel 20 is relatively stable and is not easy to deform.
Optionally, the flow guide channel 20 may be welded to the flow guide portion 12 to improve the firmness of the fixed connection between the flow guide channel 20 and the flow guide portion 12.
In another embodiment of the present invention, the heat exchanging device 100 may further include an outer wall 11 surrounding the heat exchanging cylinder 10, a water cooling cavity 13 may be enclosed between the outer wall 11 and the heat exchanging cylinder 10, and a cooling pipe 16 may be disposed in the water cooling cavity 13; one end of the outer wall 11 far away from the flow guide part 12 can be provided with a water inlet 14 and a water outlet 15; the water inlet 14 may be in communication with the cooling duct 16 for introducing water into the cooling duct 16; the water outlet 15 may be in communication with the cooling duct 16 for directing water out of the cooling duct 16.
In the embodiment of the utility model, water inlet 14 can be with the cooling water follow the leading-in cooling tube 16 of the one end that guiding portion 12 was kept away from to outer wall 11, and delivery port 15 can be with the cooling water in the cooling tube 16 derive from the one end of keeping away from guiding portion 12, because water inlet 14 and delivery port 15 all set up the same one end at outer wall 11 for cooling tube 16 can fully cool off the temperature in draft tube 10, and then fully absorb the crystallization latent heat that single crystal silicon rod 30 produced at the growth in-process, improve single crystal silicon rod 30's growth rate.
The embodiment of the utility model provides a heat transfer device has following advantage:
in the embodiment of the utility model, the heat exchange cylinder is provided with the flow guiding part at one end close to the molten silicon liquid level, the inner wall of the flow guiding part and the central shaft of the heat exchange cylinder form a preset included angle, the cross-sectional area of the flow guiding part is smaller than or equal to the cross-sectional area of the heat exchange cylinder, further, the flow guiding part can guide the gas in the heat exchange cylinder to be discharged to the molten silicon liquid level from the flow guiding part, and the gas can take away the crystallization latent heat emitted from the growth interface of the single crystal silicon rod in the process of leaving the molten silicon liquid level, further, the inner wall of the flow guiding part is also provided with a flow guiding channel, the flow guiding channel extends from the inside of the heat exchange cylinder to the molten silicon liquid level, the flow guiding channel can guide the gas in the heat exchange cylinder to the molten silicon liquid level in a directional manner, so that the flowing speed of the gas is accelerated, and the speed of emission of the crystallization latent heat of the growth interface of the single crystal silicon rod is accelerated, therefore, a good growing environment is created for the single crystal silicon rod, the single crystal silicon rod can grow rapidly and stably, and the preparation cost of the single crystal silicon rod is reduced due to the fact that the growing speed of the single crystal silicon rod 30 is high.
On the other hand, the utility model also provides a single crystal growing furnace can be used for growing single crystal silicon rod 30, can include draft tube and above-mentioned heat transfer device 100, and heat transfer device 100 can overlap and establish in the draft tube.
In practical application, the heat exchange device 100 can be sleeved in the guide shell, so that the guide shell can protect the heat exchange device 100, and the latent heat of crystallization can be quickly taken away through the guide shell and the heat exchange device 100.
Specifically, the lower surface of water conservancy diversion portion 12 can with the lower surface parallel and level of heat conduction section of thick bamboo, the lower surface of water conservancy diversion section of thick bamboo does the surface that the water conservancy diversion section of thick bamboo is close to the molten silicon liquid level, and then the lower surface of water conservancy diversion portion 12 is great with the relative area of molten silicon liquid level, does benefit to and conducts the single crystal latent heat to heat exchange tube 10 fast.
The heat exchange device 100 can also be connected with the guide shell through a connecting part to enhance the stability of the relative position between the two. In the embodiment of the present invention, this is not particularly limited.
The embodiment of the utility model provides a single crystal growing furnace has following advantage:
in the embodiment of the utility model, the heat exchange cylinder is provided with the flow guiding part at one end close to the liquid level of the silicon melt, the inner wall of the flow guiding part and the central axis of the heat exchange cylinder form a preset included angle, the cross-sectional area of the flow guiding part is smaller than or equal to the cross-sectional area of the heat exchange cylinder, furthermore, the flow guiding part can guide the gas in the heat exchange cylinder to be discharged to the liquid level of the silicon melt from the flow guiding part, and the gas can take away the latent heat of crystallization emitted from the growth interface of the silicon single crystal rod in the process of leaving the liquid level of the silicon melt, further, the inner wall of the flow guiding part is also provided with the flow guiding channel, the flow guiding channel extends from the inside of the heat exchange cylinder to the liquid level of the silicon melt, the flow guiding channel can guide the gas in the heat exchange cylinder to the liquid level of the silicon melt, so that the flowing speed of the gas is accelerated, the speed of the latent heat of crystallization emitted from the growth interface of the silicon single crystal rod is accelerated, thereby creating a good growth environment for the silicon rod, the silicon single crystal rod can grow rapidly and stably, and the preparation cost of the silicon single crystal rod is reduced due to the fact that the growth speed of the silicon single crystal rod 30 is high.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in the process, method, article, or terminal equipment comprising the element.
The heat exchange device and the single crystal furnace provided by the utility model are introduced in detail, and the principle and the implementation mode of the utility model are explained by applying specific examples, and the explanation of the above examples is only used for helping to understand the method and the core idea of the utility model; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the specific implementation and application scope, and in summary, the content of the present specification should not be understood as the limitation of the present invention.
Claims (9)
1. A heat exchange device for growing a single crystal silicon rod, comprising: the heat exchange cylinder is provided with a flow guide part at one end close to the liquid level of the molten silicon, the inner wall of the flow guide part and the central shaft of the heat exchange cylinder form a preset included angle, and the cross section area of the flow guide part is smaller than or equal to that of the heat exchange cylinder;
a flow guide channel is arranged on the inner wall of the flow guide part and extends from the inside of the heat exchange cylinder to the molten silicon liquid level;
the preset included angle is 0-40 degrees.
2. The heat exchange device of claim 1, wherein the number of the flow guide channels is multiple, and the multiple flow guide channels are arranged at intervals along the circumferential direction of the inner wall of the flow guide part.
3. The heat exchange device of claim 1, wherein the flow guide channel comprises first and second opposing ports, the second port being proximate to the molten silicon surface;
the second port is flush with one end, close to the molten silicon liquid level, of the flow guide part.
4. A heat exchange device according to claim 3, wherein the cross-sectional area of the flow directing channels decreases in a direction from the first port to the second port.
5. The heat exchange device of claim 1, wherein the cross-sectional shape of the flow guide channel is polygonal.
6. The heat exchange device of claim 1, wherein the flow guide channel is made of stainless steel.
7. The heat exchange device of claim 1, wherein the flow guide channel is welded to the flow guide portion.
8. The heat exchange device of claim 1, further comprising: the outer wall surrounds the heat exchange cylinder, a water cooling cavity is formed between the outer wall and the heat exchange cylinder, and a cooling pipeline is arranged in the water cooling cavity;
a water inlet and a water outlet are formed in one end, far away from the flow guide part, of the outer wall;
the water inlet is communicated with the cooling pipeline and is used for guiding water into the cooling pipeline;
the water outlet is communicated with the cooling pipeline and used for leading water out of the cooling pipeline.
9. A single crystal furnace for growing a silicon single crystal rod, which is characterized by comprising a guide shell and the heat exchange device of any one of the claims 1 to 8, wherein the heat exchange device is sleeved in the guide shell.
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| CN202021876745.1U CN214244666U (en) | 2020-09-01 | 2020-09-01 | Heat exchange device and single crystal furnace |
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| CN202021876745.1U CN214244666U (en) | 2020-09-01 | 2020-09-01 | Heat exchange device and single crystal furnace |
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| CN214244666U true CN214244666U (en) | 2021-09-21 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024051210A1 (en) * | 2022-09-08 | 2024-03-14 | 隆基绿能科技股份有限公司 | Heat exchanger for mono-crystal furnace and mono-crystal furnace |
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2020
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024051210A1 (en) * | 2022-09-08 | 2024-03-14 | 隆基绿能科技股份有限公司 | Heat exchanger for mono-crystal furnace and mono-crystal furnace |
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