CN214228213U

CN214228213U - Filtering device, radio frequency front-end device and wireless communication device

Info

Publication number: CN214228213U
Application number: CN202022192336.6U
Authority: CN
Inventors: 虞成城; 曹艳杰; 王伟
Original assignee: Shenzhen Sunway Communication Co Ltd
Current assignee: Shenzhen Sunway Communication Co Ltd
Priority date: 2020-06-22
Filing date: 2020-09-29
Publication date: 2021-09-17
Anticipated expiration: 2030-09-29

Abstract

The utility model provides a filtering device, a radio frequency front end device and a wireless communication device. Wherein, the filter device includes: a substrate, at least one resonant device, a passive device, and a connector; wherein the at least one resonant device includes a first side and a second side opposite the first side, the substrate is located at the first side, and the passive device is located at the second side; wherein at least one resonant device is connected with the passive device by a connecting piece. Integrating resonating devices (e.g., SAW resonating devices or BAW resonating devices) and passive devices (e.g., IPDs) into one wafer to form rf filtering devices can broaden passband bandwidth, have high out-of-band rejection, and reduce space usage in the rf front-end chip.

Description

Filtering device, radio frequency front-end device and wireless communication device

Technical Field

The utility model relates to the field of semiconductor technology, particularly, the utility model relates to a filtering device, a radio frequency front end device and a wireless communication device.

Background

A Radio Frequency (RF) front-end chip of a wireless communication device includes a power amplifier, an antenna switch, a Radio Frequency filter, a multiplexer, a low noise amplifier, and the like. Wherein, the radio frequency filter includes: a piezoelectric Acoustic Surface Wave (SAW) filter, a Bulk Acoustic Wave (BAW) filter, a Micro-Electro-Mechanical System (MEMS) filter, an Integrated Passive Device (IPD) filter, and the like.

The quality factor value (Q value) of the SAW resonator and the BAW resonator is high, and the SAW resonator and the BAW resonator are made into a radio frequency filter with low insertion loss and high out-of-band rejection. Where the Q value is the quality factor value of the resonator, defined as the center frequency divided by the 3dB bandwidth of the resonator. Filters made of SAW resonators and BAW resonators suffer from electro-mechanical coupling factor (electromechanical coupling factor) of piezoelectric material, passband (passband) bandwidth is limited, and IPD has a wider passband than SAW filters and BAW filters.

A filter formed in combination with resonators (e.g., SAW resonators or BAW resonators) and IPDs can broaden the passband bandwidth while having high out-of-band rejection. However, electrically connecting the monolithic resonator and the monolithic IPD (e.g., SAW resonator or BAW resonator in one wafer, IPD in another wafer) can take up more space in the RF front-end chip and introduce higher fabrication costs. With the advent of the 5G era, the RF front-end chip will include more RF front-end modules than the 4G era, each including multiple RF filters, and the size of the chip will need to be further reduced, so that space optimization will be an important consideration in RF filter design.

SUMMERY OF THE UTILITY MODEL

The utility model provides a problem provide a filter equipment can widen the passband bandwidth, has the high outband and restraines, and reduces the space that occupies in the RF front end chip.

In order to solve the above problem, an embodiment of the present invention provides a filtering apparatus, including: a substrate, at least one resonant device, a passive device, and a connector; wherein the at least one resonant device comprises a first side and a second side opposite the first side, the substrate being located on the first side, the passive device being located on the second side; wherein the at least one resonating means and the passive means are connected by the connecting means. Wherein the substrate, the at least one resonating device, and the passive device are located in one wafer.

In some embodiments, the at least one resonant device includes, but is not limited to, at least one of: surface Acoustic Wave (SAW) resonator devices, Bulk Acoustic Wave (BAW) resonator devices.

In some embodiments, the passive devices include, but are not limited to, at least one of: capacitor, inductor, resistor, and via. In some embodiments, the passive device includes, but is not limited to, an Integrated Passive Device (IPD), wherein the integrated passive device is formed by a semiconductor process.

In some embodiments, the connector includes, but is not limited to, at least one of: bumps, lands, electrical leads, vias.

In some embodiments, the at least one resonating means comprises a first resonating means comprising: a first cavity; a first electrode layer, at least a portion of the first electrode layer being located within or on the first cavity; a first piezoelectric layer covering the first cavity, the first cavity and the first piezoelectric layer being located on both sides of at least a portion of the first electrode layer; and the second electrode layer is positioned on the first piezoelectric layer, and the first electrode layer and the second electrode layer are positioned on two sides of the first piezoelectric layer.

In some embodiments, the substrate includes the first cavity and a first groove, the first groove is located on one side of the first cavity in the horizontal direction and is communicated with the first cavity; the first end of the first electrode layer is positioned in the first cavity, the second end of the first electrode layer is positioned in the first groove, and the depth of the first groove is equal to the thickness of the first electrode layer; the first piezoelectric layer is located on the first electrode layer, is a flat layer, and further covers the substrate.

In some embodiments, the substrate comprises the first cavity; the first electrode layer is positioned on the first cavity and covers the first cavity; the first piezoelectric layer is positioned above the substrate, covering the first electrode layer. In some embodiments, the first piezoelectric layer comprises a first protrusion, the first protrusion being located above the first electrode layer; the second electrode layer includes a second protrusion portion on the first protrusion portion. In some embodiments, the shape of the first protrusion comprises: trapezoidal and rectangular; the shape of the second protrusion includes: trapezoidal and rectangular.

In some embodiments, the first cavity is located on the substrate; the first electrode layer is positioned on the substrate and comprises a third protrusion part, the third protrusion part is positioned on the first cavity, and the first cavity and the first piezoelectric layer are positioned on two sides of the third protrusion part; the first piezoelectric layer is on the substrate, the first piezoelectric layer including a fourth protrusion, the fourth protrusion being over the third protrusion; the second electrode layer includes a fifth protrusion, and the fifth protrusion is located on the fourth protrusion. In some embodiments, the shape of the third protrusion comprises: trapezoidal, arched, rectangular; the shape of the fourth protrusion includes: trapezoidal, arched, rectangular; the shape of the fifth protrusion includes: trapezoidal, arched, rectangular.

In some embodiments, the first resonating means further comprises: the substrate and the first piezoelectric layer are positioned on two sides of the first middle layer, the first middle layer is used for blocking leakage waves, the first middle layer comprises the first cavity, and the material of the first middle layer comprises but is not limited to at least one of the following materials: polymer, insulating dielectric, polysilicon. In some embodiments, the first intermediate layer further includes a second groove located on one side of the first cavity in the horizontal direction and communicating with the first cavity; the first end of the first electrode layer is positioned in the first cavity, the second end of the first electrode layer is positioned in the second groove, and the depth of the second groove is equal to the thickness of the first electrode layer; the first piezoelectric layer is located on the first electrode layer, is a flat layer, and further covers the first intermediate layer. In some embodiments, the first electrode layer is located on the first cavity, covering the first cavity; the first piezoelectric layer is located over the first intermediate layer, covering the first electrode layer.

In some embodiments, the first resonating means further comprises: the substrate and the first piezoelectric layer are positioned on two sides of the second middle layer, the second middle layer is used for blocking leakage waves, the first cavity is positioned on the second middle layer, and the material of the second middle layer comprises but is not limited to at least one of the following materials: polymer, insulating dielectric, polysilicon. In some embodiments, the first electrode layer is on the second intermediate layer, the first electrode layer includes a sixth protrusion on the first cavity, the first cavity and the first piezoelectric layer are on both sides of the sixth protrusion; the first piezoelectric layer is located on the second intermediate layer, the first piezoelectric layer includes a seventh protrusion, and the seventh protrusion is located above the sixth protrusion; the second electrode layer includes an eighth protrusion, and the eighth protrusion is located on the seventh protrusion. In some embodiments, the shape of the sixth protrusion comprises: trapezoidal, arched, rectangular; the seventh protrusion has a shape including: trapezoidal, arched, rectangular; the shape of the eighth protrusion includes: trapezoidal, arched, rectangular.

In some embodiments, the at least one resonating means comprises a second resonating means comprising: a first reflective layer; a third electrode layer on the first reflective layer; a second piezoelectric layer located above the first reflective layer, covering the third electrode layer; and the fourth electrode layer is positioned on the second piezoelectric layer, and the third electrode layer and the fourth electrode layer are positioned on two sides of the second piezoelectric layer.

In some embodiments, the first reflective layer, which is disposed on the substrate, includes first sub-reflective layers and second sub-reflective layers, the first sub-reflective layers and the second sub-reflective layers are alternately disposed, and the first sub-reflective layers and the second sub-reflective layers are made of different materials. In some embodiments, the first reflective layer comprises a bragg reflective layer. In some embodiments, the second piezoelectric layer includes a ninth protrusion, the ninth protrusion being located above the third electrode layer; the fourth electrode layer includes a tenth protrusion portion, and the tenth protrusion portion is located on the ninth protrusion portion.

In some embodiments, the at least one resonant device comprises a third resonant device comprising: a third piezoelectric layer; a fifth electrode layer on the third piezoelectric layer. In some embodiments, the fifth electrode layer includes, but is not limited to, an interdigital transducing device. In some embodiments, the fifth electrode layer includes first electrode stripes and second electrode stripes, the polarity of the first electrode stripes is different from that of the second electrode stripes, and the first electrode stripes and the second electrode stripes are alternately arranged.

In some embodiments, the third resonating means further comprises: and the third piezoelectric layer is positioned on the third middle layer, the substrate and the third piezoelectric layer are positioned on two sides of the third middle layer, and the third middle layer is used for blocking leakage waves or temperature compensation. In some embodiments, the third resonating means further comprises: the third middle layer is positioned on the fourth middle layer, the substrate and the third middle layer are positioned on two sides of the fourth middle layer, and the fourth middle layer is used for blocking leakage waves.

In some embodiments, the third resonating means further comprises: and the substrate and the third piezoelectric layer are positioned on two sides of the second reflecting layer. In some embodiments, the second reflective layer includes third sub-reflective layers and fourth sub-reflective layers, the third sub-reflective layers and the fourth sub-reflective layers are alternately disposed, and the third sub-reflective layers and the fourth sub-reflective layers are made of different materials. In some embodiments, the second reflective layer comprises a bragg reflective layer.

In some embodiments, the material of the substrate includes, but is not limited to, at least one of: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate. In some embodiments, the at least one resonating means comprises a fourth resonating means comprising: a sixth electrode layer on the substrate; wherein the sixth electrode layer comprises interdigital transducing devices. In some embodiments, the fourth resonating means further comprises: and the temperature compensation layer is positioned on the substrate and covers the sixth electrode layer.

The embodiment of the utility model provides a still provide a radio frequency front end device, include: power amplifying means and at least one filtering means as provided in one of the above embodiments; the power amplifying device is connected with the filtering device.

The embodiment of the utility model provides a still provide a radio frequency front end device, include: low noise amplification means and at least one filtering means as provided in one of the above embodiments; the low-noise amplifying device is connected with the filtering device.

The embodiment of the utility model provides a still provide a radio frequency front end device, include: multiplexing means comprising at least one filtering means as provided in one of the above embodiments.

The embodiment of the utility model provides a still provide a wireless communication device, include: an antenna, a baseband processing device and a radio frequency front end device as provided in one of the above embodiments; the antenna is connected with the first end of the radio frequency front-end device; the baseband processing device is connected with the second end of the radio frequency front-end device.

As can be seen from the above description, the present invention provides a filtering device comprising at least one resonating device (e.g., a BAW resonating device or a SAW resonating device) and a passive device (e.g., an IPD), wherein the at least one resonating device and the passive device are located in one die (die), thereby widening the passband bandwidth, having high out-of-band rejection, and reducing the space occupied in the RF front-end chip. In addition, integrating the resonating device and the passive device into one wafer to form the filter device can reduce the loss of electrical transmission, thereby improving the performance of the filter device, as compared to electrically connecting a monolithic resonating device and a monolithic passive device.

Drawings

Fig. 1 is a schematic structural diagram of a cross section a of a filtering apparatus 100 according to an embodiment of the present invention;

fig. 2a is a schematic structural diagram of a cross section a of a filtering apparatus 200 according to an embodiment of the present invention;

FIG. 2b is a schematic diagram of the structure of a hexagonal crystal;

FIG. 2c (i) is a schematic diagram of the structure of an orthorhombic crystal;

FIG. 2c (ii) is a schematic diagram of the structure of a tetragonal crystal;

FIG. 2c (iii) is a schematic diagram of the structure of a cubic crystal;

fig. 3 is a schematic structural diagram of a cross section a of a filtering apparatus 300 according to an embodiment of the present invention;

fig. 4 is a schematic structural diagram of a cross section a of a filtering apparatus 400 according to an embodiment of the present invention;

fig. 5 is a schematic structural diagram of a cross section a of a filtering apparatus 500 according to an embodiment of the present invention;

fig. 6 is a schematic structural diagram of a cross section a of a filter device 600 according to an embodiment of the present invention;

fig. 7 is a schematic structural diagram of a cross section a of a filtering apparatus 700 according to an embodiment of the present invention;

fig. 8 is a schematic structural diagram of a cross section a of a filtering apparatus 800 according to an embodiment of the present invention;

fig. 9 is a schematic structural diagram of a cross section a of a filtering apparatus 900 according to an embodiment of the present invention;

fig. 10 is a schematic structural diagram of a cross section a of a filter device 1000 according to an embodiment of the present invention;

fig. 11 is a schematic structural diagram of a cross section a of a filtering apparatus 1100 according to an embodiment of the present invention;

fig. 12 is a schematic structural diagram of a cross section a of a filter device 1200 according to an embodiment of the present invention;

fig. 13 is a schematic structural diagram of a cross section a of a filter device 1300 according to an embodiment of the present invention;

fig. 14 is a schematic structural diagram of a cross section a of a filter 1400 according to an embodiment of the present invention;

fig. 15a is a schematic structural diagram of a cross section a of a filter device 1500 according to an embodiment of the present invention;

fig. 15b is an equivalent circuit diagram of a filter device 1500 according to an embodiment of the present invention;

fig. 16a is a schematic structural diagram of a cross section a of a filter device 1600 according to an embodiment of the present invention;

fig. 16B is a schematic structural diagram of a cross section B of a filter device 1600 according to an embodiment of the present invention;

fig. 16c is an equivalent circuit diagram of a filter device 1600 according to an embodiment of the present invention;

fig. 17a is a schematic structural diagram of a cross section a of a filter device 1700 according to an embodiment of the present invention;

fig. 17b is a schematic diagram of an equivalent circuit of a filtering apparatus 1700 according to an embodiment of the present invention;

fig. 18a is a schematic structural diagram of a cross section a of a filtering apparatus 1800 according to an embodiment of the present invention;

fig. 18b is an equivalent circuit diagram of a filtering apparatus 1800 according to an embodiment of the present invention;

fig. 19 is a performance diagram 1900 of a filtering apparatus according to an embodiment of the present invention.

The cross section a and the cross section B are two cross sections orthogonal to each other.

Detailed Description

In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described herein, and thus the present invention is not limited by the specific embodiments disclosed below.

As described in the background section, electrically connecting a monolithic resonator device and a monolithic passive device (e.g., a SAW resonator device or a BAW resonator device in one die and an IPD in another die) takes up more space in the RF front-end chip and introduces higher fabrication costs.

The inventors of the present invention have found that integrating a resonating device (e.g., a SAW resonating device or a BAW resonating device) and a passive device (e.g., an IPD) into one wafer forms an RF filtering device, which can widen the passband bandwidth, have high out-of-band rejection, and reduce the space occupied in the RF front-end chip.

The inventors of the present invention have also found that integrating the resonator device and the passive device into one wafer can reduce the loss of electrical transmission, compared to electrically connecting the monolithic resonator device and the monolithic passive device, thereby improving the filtering performance.

In order to solve the above problem, an embodiment of the present invention provides a filtering apparatus, including: a substrate, at least one resonant device, a passive device, and a connector; wherein the at least one resonant device comprises a first side and a second side opposite the first side, the substrate being located on the first side, the passive device being located on the second side; wherein the at least one resonating means and the passive means are connected by the connecting means.

In this embodiment, the substrate, the at least one resonating device, and the passive device are located in one wafer. In this embodiment, the at least one resonance device includes, but is not limited to, at least one of: surface Acoustic Wave (SAW) resonator devices, Bulk Acoustic Wave (BAW) resonator devices. In this embodiment, the passive device includes, but is not limited to, at least one of: capacitor, inductor, resistor, and via. In this embodiment, the passive device includes, but is not limited to, an Integrated Passive Device (IPD), wherein the integrated passive device is formed through a semiconductor process. In this embodiment, the connecting member includes, but is not limited to, at least one of: bumps, lands, electrical leads, vias.

It should be noted that integrating the resonating devices (e.g., SAW resonating devices or BAW resonating devices) and the passive devices (e.g., IPDs) into one wafer to form RF filtering devices can broaden the passband bandwidth, have high out-of-band rejection, and reduce the space occupied in the RF front-end chip.

Furthermore, integrating the resonating device and the passive device into one wafer can reduce the loss of electrical transmission, thereby improving filtering performance, as compared to electrically connecting a monolithic resonating device and a monolithic passive device.

Fig. 1 to 14 show a plurality of embodiments of the present invention, which employ different structures of the resonance device, but the present invention can also be implemented in other ways different from those described herein, and therefore the present invention is not limited by the embodiments disclosed below.

Fig. 1 is a schematic structural diagram of a cross section a of a filtering apparatus 100 according to an embodiment of the present invention.

As shown in fig. 1, an embodiment of the present invention provides a filtering apparatus 100 including: a substrate 101, wherein the substrate 101 is a wafer substrate; at least one resonator device 103 located above the substrate 101; and a passive device 105 located above the at least one resonant device 103; wherein the at least one resonant device 103 is electrically connected with the passive device 105.

In this embodiment, the substrate 101 is located on a first side 103a of the at least one resonant device 103 and the passive device 105 is located on a second side 103b of the at least one resonant device 103. In this embodiment, the substrate 101, the at least one resonator device 103, and the passive device 105 are integrated in one wafer.

In this embodiment, the material of the substrate 101 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the at least one resonance device 103 includes, but is not limited to, at least one of: SAW resonator devices, BAW resonator devices.

In this embodiment, the passive device 105 includes, but is not limited to, at least one of: capacitor, inductor, resistor, and via. It should be noted that passive devices (e.g., IPDs) known to those skilled in the art can be applied to the embodiments of the present invention.

It should be noted that integrating the resonating means and the passive means into one wafer to form the filtering means can broaden the passband bandwidth, have high out-of-band rejection, and reduce the space occupied in the RF front-end chip.

Fig. 2 is a schematic structural diagram of a cross section a of a filtering apparatus 200 according to an embodiment of the present invention.

As shown in fig. 2a, an embodiment of the present invention provides a filtering apparatus 200 including: a substrate 201, wherein the substrate 201 is a wafer substrate; a BAW resonator device 203 located above the substrate 201; and a passive device 205 located above the BAW resonating device 203; wherein the BAW resonating device 203 and the passive device 205 are electrically connected by a connection 207.

In this embodiment, the substrate 201 and the passive device 205 are respectively located on both sides of the BAW resonator device 203. In this embodiment, the substrate 201, the BAW resonating device 203, and the passive device 205 are integrated in one wafer.

In this embodiment, the material of the substrate 201 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the BAW resonance device 203 includes: an intermediate layer 2031 disposed on the substrate 201, wherein an upper surface side of the intermediate layer 2031 includes a cavity 2033a and a groove 2033b, the groove 2033b is disposed on one of left and right sides of the cavity 2033a (i.e., on one side in a horizontal direction) and is communicated with the cavity 2033a, and a depth of the groove 2033b is smaller than a depth of the cavity 2033 a; an electrode layer 2035, a first end 2035a of the electrode layer 2035 being located within the cavity 2033a, a second end 2035b of the electrode layer 2035 being located within the recess 2033b, the second end 2035b being opposite the first end 2035a, the depth of the recess 2033b being equal to the thickness of the electrode layer 2035; a piezoelectric layer 2037 disposed on the electrode layer 2035, wherein the substrate 201 and the piezoelectric layer 2037 are disposed on two sides of the intermediate layer 2031, and the piezoelectric layer 2037 is a flat layer and covers at least the cavity 2033 a; and an electrode layer 2039 on the piezoelectric layer 2037, the electrode layer 2035 and the electrode layer 2039 being on two sides of the piezoelectric layer 2037, respectively; here, the resonance region (i.e., the overlapping region of the electrode layer 2035 and the electrode layer 2039) is suspended from the cavity 2033a and does not overlap with the intermediate layer 2031.

In this embodiment, the material of the intermediate layer 2031 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.

In this embodiment, the material of the electrode layer 2035 includes, but is not limited to, at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium.

In this embodiment, the piezoelectric layer 2037 also covers the upper surface side of the intermediate layer 2031. In this embodiment, the intermediate layer 2031 and the passive device 205 are located on either side of the piezoelectric layer 2037. In this embodiment, the material of the piezoelectric layer 2037 includes, but is not limited to, at least one of: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate. It should be noted that the acoustic impedance of the material of the intermediate layer 2031 is different from the acoustic impedance of the material of the piezoelectric layer 2037, so that a transverse mode (lateral mode) leakage wave can be blocked.

In this embodiment, the piezoelectric layer 2037 comprises a plurality of crystals including a first crystal and a second crystal, wherein the first crystal and the second crystal are any two crystals of the plurality of crystals. Those skilled in the art know that the crystal orientation, crystal plane, etc. of a crystal can be expressed based on a coordinate system. As shown in fig. 2b, an ac three-dimensional coordinate system (including a-axis and c-axis) is used for hexagonal crystals such as aluminum nitride crystals. As shown in fig. 2c, crystals of (i) orthorhombic system (a ≠ b ≠ c), (ii) tetragonal system (a ≠ c), and (iii) cubic system (a ═ b ≠ c) are represented by xyz stereo coordinate system (including x-axis, y-axis, and z-axis). In addition to the two examples described above, the crystal may also be represented based on other coordinate systems known to those skilled in the art, and thus the present invention is not limited by the two examples described above.

In this embodiment, the first crystal may be represented based on a first stereo coordinate system, and the second crystal may be represented based on a second stereo coordinate system, where the first stereo coordinate system at least includes a first coordinate axis along a first direction and a third coordinate axis along a third direction, and the second stereo coordinate system at least includes a second coordinate axis along a second direction and a fourth coordinate axis along a fourth direction, where the first coordinate axis corresponds to a height of the first crystal, and the second coordinate axis corresponds to a height of the second crystal.

In this embodiment, the first direction and the second direction are the same or opposite. It should be noted that the first direction and the second direction are the same: the included angle range of the vector along the first direction and the vector along the second direction comprises 0 degree to 5 degrees; the first direction and the second direction are opposite to each other: an included angle range of a vector along the first direction and a vector along the second direction includes 175 degrees to 180 degrees.

In another embodiment, the first stereo coordinate system is an ac stereo coordinate system, wherein the first coordinate axis is a first c-axis, and the third coordinate axis is a first a-axis; the second three-dimensional coordinate system is an ac three-dimensional coordinate system, the second coordinate axis is a second c-axis, the fourth coordinate axis is a second a-axis, and the first c-axis and the second c-axis are directed in the same direction or in opposite directions.

In another embodiment, the first stereoscopic coordinate system further comprises a fifth coordinate axis along a fifth direction, and the second stereoscopic coordinate system further comprises a sixth coordinate axis along a sixth direction. In another embodiment, the first direction and the second direction are the same or opposite, and the third direction and the fourth direction are the same or opposite. It should be noted that the third direction and the fourth direction are the same: the included angle range of the vector along the third direction and the vector along the fourth direction comprises 0 degree to 5 degrees; the third direction and the fourth direction are opposite to each other: an included angle range of a vector along the third direction and a vector along the fourth direction includes 175 degrees to 180 degrees.

In another embodiment, the first stereo coordinate system is an xyz stereo coordinate system, wherein the first coordinate axis is a first z-axis, the third coordinate axis is a first y-axis, and the fifth coordinate axis is a first x-axis; the second three-dimensional coordinate system is an xyz three-dimensional coordinate system, the second coordinate axis is a second z axis, the fourth coordinate axis is a second y axis, and the sixth coordinate axis is a second x axis. In another embodiment, the first and second z-axes are pointing in the same direction, and the first and second y-axes are pointing in the same direction. In another embodiment, the first and second z-axes are oppositely directed and the first and second y-axes are oppositely directed. In another embodiment, the first and second z-axes are pointing in the same direction, and the first and second y-axes are pointing in opposite directions. In another embodiment, the first and second z-axes are oppositely directed, and the first and second y-axes are identically directed.

In this embodiment, the piezoelectric layer 2037 comprises a plurality of crystals having a rocking curve half-width below 2.5 degrees. It should be noted that a Rocking curve (Rocking curve) describes the angular divergence size of a specific crystal plane (a crystal plane determined by a diffraction angle) in a sample, and is represented by a planar coordinate system, wherein an abscissa is an included angle between the crystal plane and the sample plane, an ordinate represents the diffraction intensity of the crystal plane at a certain included angle, the Rocking curve is used for representing the crystal lattice quality, and the smaller the half-peak width angle is, the better the crystal lattice quality is. Further, the Full Width at Half Maximum (FWHM) refers to the distance between two points in one peak of the function, the front and rear function values of which are equal to Half of the peak value.

It should be noted that forming the piezoelectric layer 2037 in a plane can cause the piezoelectric layer 2037 to not include a crystal with a significant turn, thereby contributing to an improvement in the electromechanical coupling coefficient of the resonant device and the Q value of the resonant device.

In this embodiment, the piezoelectric layer 2037 and the passive device 205 are located on either side of the electrode layer 2039. In this embodiment, the material of the electrode layer 2039 includes, but is not limited to, at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium.

In this embodiment, the passive device 205 includes, but is not limited to, at least one of the following: capacitor, inductor, resistor, and via. It should be noted that passive devices (e.g., IPDs) known to those skilled in the art can be applied to the embodiments of the present invention. In this embodiment, the passive device 205 includes a cavity 2051, which is located above the resonance region and corresponds to the cavity 2033a, and the cavity 2051 can optimize the height of the monolithic filter device. In another embodiment, the cavity may be formed on the upper side of the resonance region by raising the passive device.

In this embodiment, the first ends of the two connecting members 207 are electrically connected to the electrode layer 2035 and the electrode layer 2039, respectively, and the second end of the connecting member 207 is electrically connected to the passive device 205. In this embodiment, the connecting member 207 includes, but is not limited to, at least one of the following: electrical leads, bumps (bump), lands (pad), vias. It should be noted that the connection structure known to those skilled in the art can be applied to the embodiments of the present invention.

In this embodiment, the filtering apparatus 200 further includes: a seal 209 on the piezoelectric layer 2037 between the piezoelectric layer 2037 and the passive device 205 surrounding at least the cavity 2051 for sealing the cavity 2051.

It should be noted that integrating the BAW resonator device and the passive device into one wafer to form the filtering device can broaden the passband bandwidth, have high out-of-band rejection, and reduce the space occupied in the RF front-end chip. Furthermore, integrating the resonator device and the passive device into one wafer can reduce the loss of electrical transmission (the electrical transmission path is shorter) compared to electrically connecting the monolithic resonator device and the monolithic passive device, thereby improving the filtering performance.

Fig. 3 is a schematic structural diagram of a cross section a of a filtering apparatus 300 according to an embodiment of the present invention.

As shown in fig. 3, an embodiment of the present invention provides a filtering apparatus 300 including: a substrate 301, wherein the substrate 301 is a wafer substrate; a BAW resonator device 303 located on the substrate 301; and a passive device 305 located above the BAW resonating device 303; wherein the BAW resonating means 303 and the passive means 305 are electrically connected by a connection 307.

In this embodiment, a first side of the BAW resonator device 303 is the substrate 301 and a second side of the BAW resonator device 303 is the passive device 305, wherein the first side of the BAW resonator device 303 is opposite to the second side. In this embodiment, the substrate 301, the BAW resonating device 303, and the passive device 305 are integrated in one wafer.

In this embodiment, the material of the substrate 301 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the BAW resonance device 303 includes but is not limited to: a cavity 3031a and a groove 3031b on the upper surface side of the substrate 301, wherein the groove 3031b is positioned on one of the left side and the right side of the cavity 3031a and communicated with the cavity 3031a, and the depth of the groove 3031b is smaller than that of the cavity 3031 a; an electrode layer 3033, a first end 3033a of said electrode layer 3033 being positioned within said cavity 3031a, a second end 3033b of said electrode layer 3033 being positioned within said recess 3031b, said second end 3033b being opposite said first end 3033a, said recess 3031b having a depth equal to the thickness of said electrode layer 3033; a piezoelectric layer 3035 positioned on the electrode layer 3033, wherein the piezoelectric layer 3035 is a flat layer and at least covers the cavity 3031 a; and an electrode layer 3037, located on the piezoelectric layer 3035, wherein the electrode layer 3033 and the electrode layer 3037 are respectively located on two sides of the piezoelectric layer 3035; wherein a resonance region (i.e., an overlapping region of the electrode layer 3033 and the electrode layer 3037) is suspended with respect to the cavity 3031a without overlapping with the substrate 301.

In this embodiment, the material of the electrode layer 3033 includes, but is not limited to, at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium.

In this embodiment, the piezoelectric layer 3035 also covers the upper surface side of the substrate 301. In this embodiment, the substrate 301 and the passive device 305 are respectively located on two sides of the piezoelectric layer 3035. In this embodiment, the material of the piezoelectric layer 3035 includes, but is not limited to, at least one of the following: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate.

In this embodiment, the piezoelectric layer 3035 and the passive device 305 are respectively located on two sides of the electrode layer 3037. In this embodiment, the material of the electrode layer 3037 includes, but is not limited to, at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium.

In this embodiment, the passive device 305 includes, but is not limited to, at least one of the following: capacitor, inductor, resistor, and via. It should be noted that passive devices (e.g., IPDs) known to those skilled in the art can be applied to the embodiments of the present invention. In this embodiment, the passive device 305 includes a cavity 3051 located above the resonance region, corresponding to the cavity 3031a, where the cavity 3051 may optimize the height of the monolithic filtering device. In another embodiment, the cavity may be formed on the upper side of the resonance region by raising the passive device.

In this embodiment, first ends of the two connection members 307 are electrically connected to the electrode layer 3033 and the electrode layer 3037, respectively, and a second end of the connection member 307 is electrically connected to the passive device 305. In this embodiment, the connection 307 includes, but is not limited to, at least one of the following: electrical leads, bumps (bump), lands (pad), vias. It should be noted that the connection structure known to those skilled in the art can be applied to the embodiments of the present invention.

In this embodiment, the filtering apparatus 300 further includes: a seal 309 on said piezoelectric layer 3035 between said piezoelectric layer 3035 and said passive device 305 at least enclosing said cavity 3051 for sealing said cavity 3051.

Fig. 4 is a schematic structural diagram of a cross section a of a filtering apparatus 400 according to an embodiment of the present invention.

As shown in fig. 4, an embodiment of the present invention provides a filtering apparatus 400 including: a substrate 401, wherein the substrate 401 is a wafer substrate; a BAW resonator device 403 located above the substrate 401; and a passive device 405 located above the BAW resonating device 403; wherein the BAW resonator device 403 and the passive device 405 are electrically connected by a connection 407.

In this embodiment, the substrate 401 and the passive device 405 are respectively located on both sides of the BAW resonator device 403. In this embodiment, the substrate 401, the BAW resonating device 403, and the passive device 405 are integrated in one wafer.

In this embodiment, the material of the substrate 401 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the BAW resonance device 403 includes: an intermediate layer 4031 on the substrate 401, wherein an upper surface side of the intermediate layer 4031 includes a cavity 4033; an electrode layer 4035 located on the cavity 4033 to cover the cavity 4033, wherein the substrate 401 and the electrode layer 4035 are located on two sides of the middle layer 4031 respectively; a piezoelectric layer 4037 which is provided on the intermediate layer 4031 so as to cover the electrode layer 4035, wherein the piezoelectric layer 4037 includes a protrusion 4037a and is provided above the electrode layer 4035; and an electrode layer 4039 on the piezoelectric layer 4037, the electrode layer 4039 including a protrusion 4039a on the protrusion 4037 a; here, the resonance region (i.e., an overlapping region of the electrode layer 4035 and the electrode layer 4039) overlaps with the intermediate layer 4031 at one of right and left sides of the cavity 4033.

In this embodiment, the material of the intermediate layer 4031 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.

In this embodiment, the electrode layer 4035 is also located on the intermediate layer 4031. In this embodiment, the cross section a of the electrode layer 4035 is trapezoidal. In another embodiment, the cross-section a of the lower electrode layer is rectangular. In this embodiment, the material of the electrode layer 4035 includes, but is not limited to, at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium.

In this embodiment, the piezoelectric layer 4037 also covers the upper surface side of the intermediate layer 4031. In this embodiment, the material of the piezoelectric layer 4037 includes, but is not limited to, at least one of: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate. It should be noted that the acoustic impedance of the material of the intermediate layer 4031 is different from the acoustic impedance of the material of the piezoelectric layer 4037, so that the transverse mode leakage waves can be blocked.

In this embodiment, the height of the projection 4037a is greater than or equal to the thickness of the electrode layer 4035. In this embodiment, the cross section a of the protrusion 4037a is trapezoidal. In another embodiment, the cross-section a of the first protrusion is rectangular.

In this embodiment, the piezoelectric layer 4037 and the passive device 405 are respectively located on two sides of the electrode layer 4039. In this embodiment, the material of the electrode layer 4039 includes, but is not limited to, at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium.

In this embodiment, the height of the projection 4039a is greater than or equal to the thickness of the electrode layer 4035. In this embodiment, the cross section a of the protrusion 4039a is trapezoidal. In another embodiment, the cross-section a of the second protrusion is rectangular.

In this embodiment, the passive device 405 includes, but is not limited to, at least one of the following: capacitor, inductor, resistor, and via. It should be noted that passive devices (e.g., IPDs) known to those skilled in the art can be applied to the embodiments of the present invention. In this embodiment, the passive device 405 includes a cavity 4051 located above the resonance region, corresponding to the cavity 4033, where the cavity 4051 may optimize a height of the monolithic filtering device. In another embodiment, the cavity may be formed on the upper side of the resonance region by raising the passive device.

In this embodiment, first ends of the two connecting members 407 are electrically connected to the electrode layer 4035 and the electrode layer 4039, respectively, and a second end of the connecting member 407 is electrically connected to the passive device 405. In this embodiment, the connection 407 includes, but is not limited to, at least one of the following: electrical leads, bumps (bump), lands (pad), vias. It should be noted that the connection structure known to those skilled in the art can be applied to the embodiments of the present invention.

In this embodiment, the filtering apparatus 400 further includes: a seal 409 between the BAW resonator device 403 and the passive device 405, surrounding at least the cavity 4051, for sealing the cavity 4051.

Fig. 5 is a schematic structural diagram of a cross section a of a filtering apparatus 500 according to an embodiment of the present invention.

As shown in fig. 5, an embodiment of the present invention provides a filtering apparatus 500 including: a substrate 501, wherein the substrate 501 is a wafer substrate; a BAW resonator device 503 located on the substrate 501; and a passive device 505 located above the BAW resonating device 503; wherein the BAW resonator device 503 is electrically connected to the passive device 505 by a connection 507.

In this embodiment, a first side of the BAW resonator device 503 is the substrate 501, and a second side of the BAW resonator device 503 is the passive device 505, wherein the first side of the BAW resonator device 503 is opposite to the second side. In this embodiment, the substrate 501, the BAW resonating device 503, and the passive device 505 are integrated in one wafer.

In this embodiment, the material of the substrate 501 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the BAW resonator 503 includes but is not limited to: a cavity 5031 on the upper surface side of the substrate 501; an electrode layer 5033 positioned on the cavity 5031 to cover the cavity 5031; a piezoelectric layer 5035 located on the substrate 501 and covering the electrode layer 5033, wherein the piezoelectric layer 5035 comprises a protrusion 5035a located above the electrode layer 5033; and an electrode layer 5037 on the piezoelectric layer 5035, the electrode layer 5037 comprising a protrusion 5037a on the protrusion 5035 a; wherein the resonance region (i.e., the region of overlap of the electrode layer 5033 and the electrode layer 5037) overlaps with the substrate 501, wherein the overlap is located on one of the left and right sides of the cavity 5031.

In this embodiment, the electrode layer 5033 is also located on the substrate 501. In this embodiment, the cross section a of the electrode layer 5033 is trapezoidal. In another embodiment, the cross-section a of the lower electrode layer is rectangular. In this embodiment, the material of the electrode layer 5033 includes, but is not limited to, at least one of: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium.

In this embodiment, the piezoelectric layer 5035 also covers the upper surface side of the substrate 501. In this embodiment, the material of the piezoelectric layer 5035 includes, but is not limited to, at least one of: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate.

In this embodiment, the height of the protrusions 5035a is greater than or equal to the thickness of the electrode layer 5033. In this embodiment, the protrusion 5035a has a trapezoidal cross section a. In another embodiment, the cross-section a of the first protrusion is rectangular.

In this embodiment, the piezoelectric layer 5035 and the passive device 505 are respectively located on two sides of the electrode layer 5037. In this embodiment, the material of the electrode layer 5037 includes, but is not limited to, at least one of: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium.

In this embodiment, the height of the protrusions 5037a is greater than or equal to the thickness of the electrode layer 5033. In this embodiment, the protrusion 5037a has a trapezoidal cross section a. In another embodiment, the cross-section a of the second protrusion is rectangular.

In this embodiment, the passive device 505 includes, but is not limited to, at least one of the following: capacitor, inductor, resistor, and via. It should be noted that passive devices (e.g., IPDs) known to those skilled in the art can be applied to the embodiments of the present invention. In this embodiment, the passive device 505 includes a cavity 5051 above the resonance region corresponding to the cavity 5031, and the cavity 5051 optimizes the height of the monolithic filter device. In another embodiment, the cavity may be formed on the upper side of the resonance region by raising the passive device.

In this embodiment, the first ends of the two connection components 507 are electrically connected to the electrode layer 5033 and the electrode layer 5037, respectively, and the second end of the connection component 507 is electrically connected to the passive device 505. In this embodiment, the connection 507 includes, but is not limited to, at least one of the following: electrical leads, bumps (bump), lands (pad), vias. It should be noted that the connection structure known to those skilled in the art can be applied to the embodiments of the present invention.

In this embodiment, the filtering apparatus 500 further includes: a seal 509, located between the BAW resonator device 503 and the passive device 505, surrounds at least the cavity 5051 for sealing the cavity 5051.

Fig. 6 is a schematic structural diagram of a cross section a of a filtering apparatus 600 according to an embodiment of the present invention.

As shown in fig. 6, an embodiment of the present invention provides a filtering apparatus 600 including: a substrate 601, wherein the substrate 601 is a wafer substrate; a BAW resonator device 603 located above the substrate 601; and a passive device 605 located above the BAW resonating device 603; wherein the BAW resonating means 603 and the passive means 605 are electrically connected by a connection 607.

In this embodiment, the substrate 601 and the passive device 605 are respectively located on both sides of the BAW resonator device 603. In this embodiment, the substrate 601, the BAW resonating device 603, and the passive device 605 are located in one wafer.

In this embodiment, the material of the substrate 601 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the BAW resonance device 603 includes: an intermediate layer 6031 on the substrate 601; a reflective layer 6033 on the middle layer 6031, the substrate 601 and the reflective layer 6033 being respectively located at two sides of the middle layer 6031; an electrode layer 6035 on the intermediate layer 6031, the electrode layer 6035 including a protrusion 6035a on the reflective layer 6033; a piezoelectric layer 6037 on the intermediate layer 6031, the piezoelectric layer 6037 including a protrusion 6037a above the protrusion 6035 a; an electrode layer 6039 on the piezoelectric layer 6037, the electrode layer 6039 including a protrusion 6039a on the protrusion 6037 a; wherein a resonance region (i.e., a region where the electrode layer 6035 and the electrode layer 6039 overlap) is located above the reflective layer 6033.

In this embodiment, the material of the interlayer 6031 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.

In this embodiment, the cross section a of the reflective layer 6033 is trapezoidal. In another embodiment, the cross-section a of the reflective layer is rectangular. In this embodiment, the reflective layer 6033 is a cavity, that is, a cavity 6033.

In this embodiment, the material of the electrode layer 6035 includes, but is not limited to, at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium. In this embodiment, the protrusion height of the protrusion 6035a is greater than or equal to the thickness of the reflective layer 6033 (i.e., the depth of the cavity 6033). In this embodiment, the cross section a of the protrusion 6035a is trapezoidal. In another embodiment, the cross-section a of the first protrusion is rectangular.

In this embodiment, the material of the piezoelectric layer 6037 includes, but is not limited to, at least one of: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate. It should be noted that the acoustic impedance of the material of the middle layer 6031 is different from the acoustic impedance of the material of the piezoelectric layer 6037, so that the transverse mode leakage wave can be blocked.

In this embodiment, the protrusion height of the protrusion 6037a is greater than or equal to the thickness of the reflective layer 6033 (i.e., the depth of the cavity 6033). In this embodiment, the cross section a of the protrusion 6037a is trapezoidal. In another embodiment, the cross-section a of the second protrusion is rectangular.

In this embodiment, the material of the electrode layer 6039 includes, but is not limited to, at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium. In this embodiment, the protrusion height of the protrusion 6039a is greater than or equal to the thickness of the reflective layer 6033 (i.e., the depth of the cavity 6033). In this embodiment, the cross section a of the protrusion 6039a is trapezoidal. In another embodiment, the third protrusion has a rectangular cross-section a.

In this embodiment, the passive device 605 includes, but is not limited to, at least one of the following: capacitor, inductor, resistor, and via. It should be noted that passive devices (e.g., IPDs) known to those skilled in the art can be applied to the embodiments of the present invention. In this embodiment, the passive device 605 includes a cavity 6051 above the resonance region, corresponding to the cavity 6033, where the cavity 6051 may optimize the height of the monolithic filter device. In another embodiment, the cavity may be formed on the upper side of the resonance region by raising the passive device.

In this embodiment, the first ends of the two connecting members 607 are electrically connected to the electrode layer 6035 and the electrode layer 6039, respectively, and the second end of the connecting member 607 is electrically connected to the passive device 605. In this embodiment, the connection 607 includes, but is not limited to, at least one of the following: electrical leads, bumps (bump), lands (pad), vias. It should be noted that the connection structure known to those skilled in the art can be applied to the embodiments of the present invention.

In this embodiment, the filtering apparatus 600 further includes: a seal 609 is located between the BAW resonator device 603 and the passive device 605, surrounding at least the cavity 6051, for sealing the cavity 6051.

Fig. 7 is a schematic structural diagram of a cross section a of a filtering apparatus 700 according to an embodiment of the present invention.

As shown in fig. 7, an embodiment of the present invention provides a filtering apparatus 700 including: a substrate 701, wherein the substrate 701 is a wafer substrate; a BAW resonator device 703 located on the substrate 701; and a passive device 705 located above the BAW resonating device 703; wherein the BAW resonating means 703 is electrically connected to the passive means 705 via a connection 707.

In this embodiment, a first side of the BAW resonator device 703 is the substrate 701, and a second side of the BAW resonator device 703 is the passive device 705, wherein the first side of the BAW resonator device 703 is opposite to the second side. In this embodiment, the substrate 701, the BAW resonating device 703, and the passive device 705 are located in one wafer.

In this embodiment, the material of the substrate 701 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the BAW resonance device 703 includes: a reflective layer 7031 on the substrate 701; an electrode layer 7033 on the substrate 701, wherein the electrode layer 7033 includes a protrusion 7033a on the reflective layer 7031; a piezoelectric layer 7035 on the substrate 701, the piezoelectric layer 7035 including a protrusion 7035a above the protrusion 7033 a; an electrode layer 7037 on the piezoelectric layer 7035, the electrode layer 7037 comprising a protrusion 7037a on the protrusion 7035 a; wherein a resonance region (i.e., a region where the electrode layer 7033 and the electrode layer 7037 overlap) is located above the reflective layer 7031.

In this embodiment, the cross-section a of the reflective layer 7031 is trapezoidal. In another embodiment, the cross-section a of the reflective layer is rectangular. In this embodiment, the reflective layer 7031 is a cavity, i.e., cavity 7031.

In this embodiment, the material of the electrode layer 7033 includes, but is not limited to, at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium. In this embodiment, the protrusion height of the protrusion 7033a is greater than or equal to the thickness of the reflective layer 7031 (i.e., the depth of the cavity 7031). In this embodiment, the cross section a of the protrusion 7033a is trapezoidal. In another embodiment, the cross-section a of the first protrusion is rectangular.

In this embodiment, the material of the piezoelectric layer 7035 includes, but is not limited to, at least one of: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate.

In this embodiment, the protrusion height of the protrusion 7035a is greater than or equal to the thickness of the reflective layer 7031 (i.e., the depth of the cavity 7031). In this embodiment, the cross section a of the protrusion 7035a is trapezoidal. In another embodiment, the cross-section a of the second protrusion is rectangular.

In this embodiment, the material of the electrode layer 7037 includes, but is not limited to, at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium. In this embodiment, the protrusion height of the protrusion 7037a is greater than or equal to the thickness of the reflective layer 7031 (i.e., the depth of the cavity 7031). In this embodiment, the cross section a of the protrusion 7037a is trapezoidal. In another embodiment, the third protrusion has a rectangular cross-section a.

In this embodiment, the passive devices 705 include, but are not limited to, at least one of: capacitor, inductor, resistor, and via. It should be noted that passive devices (e.g., IPDs) known to those skilled in the art can be applied to the embodiments of the present invention. In this embodiment, the passive device 705 includes a cavity 7051 above the resonance region, corresponding to the cavity 7031, where the cavity 7051 can optimize the height of the monolithic filter device. In another embodiment, the cavity may be formed on the upper side of the resonance region by raising the passive device.

In this embodiment, first ends of the two connecting members 707 are electrically connected to the electrode layer 7033 and the electrode layer 7037, respectively, and a second end of the connecting member 707 is electrically connected to the passive device 705. In this embodiment, the connecting member 707 includes, but is not limited to, at least one of: electrical leads, bumps (bump), lands (pad), vias. It should be noted that the connection structure known to those skilled in the art can be applied to the embodiments of the present invention.

In this embodiment, the filtering apparatus 700 further includes: a seal 709 is located between the BAW resonator device 703 and the passive device 705, surrounding at least the cavity 7051, for sealing the cavity 7051.

Fig. 8 is a schematic structural diagram of a cross section a of a filtering apparatus 800 according to an embodiment of the present invention.

As shown in fig. 8, an embodiment of the present invention provides a filtering apparatus 800 including: a substrate 801, wherein the substrate 801 is a wafer substrate; a BAW resonator device 803 located above the substrate 801; and a passive device 805 located above the BAW resonating device 803; wherein the BAW resonating means 803 is electrically connected to the passive device 805 by a connection 807.

In this embodiment, the substrate 801 and the passive device 805 are respectively located on both sides of the BAW resonance device 803. In this embodiment, the substrate 801, the BAW resonating device 803, and the passive device 805 are located in one wafer.

In this embodiment, the material of the substrate 801 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the BAW resonance device 803 includes: an intermediate layer 8031 on the substrate 801; a reflective layer 8033 on the intermediate layer 8031, the substrate 801 and the reflective layer 8033 being respectively located on both sides of the intermediate layer 8031; an electrode layer 8035 on the intermediate layer 8031, the electrode layer 8035 including a protrusion 8035a on the reflective layer 8033; a piezoelectric layer 8037 on the intermediate layer 8031, the piezoelectric layer 8037 including a protrusion 8037a over the protrusion 8035 a; an electrode layer 8039 on the piezoelectric layer 8037, the electrode layer 8039 including a protrusion 8039a on the protrusion 8037 a; wherein a resonance region (i.e., a region where the electrode layer 8035 and the electrode layer 8039 overlap) is located above the reflective layer 8033.

In this embodiment, the material of the intermediate layer 8031 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.

In this embodiment, the cross-section a of the reflective layer 8033 is arched. In this embodiment, the reflective layer 8033 is a cavity, i.e., the cavity 8033.

In this embodiment, the material of the electrode layer 8035 includes, but is not limited to, at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium. In this embodiment, the protrusion height of the protrusion 8035a is greater than or equal to the thickness of the reflective layer 8033 (i.e., the depth of the cavity 8033). In this embodiment, the cross section a of the protrusion 8035a is arched.

In this embodiment, the material of the piezoelectric layer 8037 includes, but is not limited to, at least one of the following: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate. It should be noted that the acoustic impedance of the material of the intermediate layer 8031 is different from the acoustic impedance of the material of the piezoelectric layer 8037, so that the transverse mode leakage wave can be blocked.

In this embodiment, the protrusion height of the protrusion 8037a is greater than or equal to the thickness of the reflective layer 8033 (i.e., the depth of the cavity 8033). In this embodiment, the cross section a of the protrusion 8037a is arched.

In this embodiment, the material of the electrode layer 8039 includes, but is not limited to, at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium. In this embodiment, the protrusion height of the protrusion 8039a is greater than or equal to the thickness of the reflective layer 8033 (i.e., the depth of the cavity 8033). In this embodiment, the cross section a of the protrusion 8039a is arched.

In this embodiment, the passive devices 805 include, but are not limited to, at least one of: capacitor, inductor, resistor, and via. It should be noted that passive devices (e.g., IPDs) known to those skilled in the art can be applied to the embodiments of the present invention. In this embodiment, the passive device 805 includes a cavity 8051 above the resonance region, corresponding to the cavity 8033, where the cavity 8051 can optimize the height of the monolithic filter device. In another embodiment, the cavity may be formed on the upper side of the resonance region by raising the passive device.

In this embodiment, first ends of two of the connecting members 807 are electrically connected to the electrode layer 8035 and the electrode layer 8039, respectively, and a second end of the connecting member 807 is electrically connected to the passive device 805. In this embodiment, the connecting member 807 includes, but is not limited to, at least one of the following: electrical leads, bumps (bump), lands (pad), vias. It should be noted that the connection structure known to those skilled in the art can be applied to the embodiments of the present invention.

In this embodiment, the filtering apparatus 800 further includes: a sealing member 809 located between the BAW resonating device 803 and the passive device 805, surrounding at least the cavity 8051, for sealing the cavity 8051.

Fig. 9 is a schematic structural diagram of a cross section a of a filtering apparatus 900 according to an embodiment of the present invention.

As shown in fig. 9, an embodiment of the present invention provides a filtering apparatus 900 including: a substrate 901, wherein the substrate 901 is a wafer substrate; a BAW resonator 903 on said substrate 901; and a passive device 905 located above the BAW resonating device 903; wherein the BAW resonating means 903 and the passive means 905 are electrically connected by a connector 907.

In this embodiment, a first side of the BAW resonator device 903 is the substrate 901, and a second side of the BAW resonator device 903 is the passive device 905, wherein the first side of the BAW resonator device 903 is opposite to the second side. In this embodiment, the substrate 901, the BAW resonating device 903, and the passive device 905 are located in one wafer.

In this embodiment, the material of the substrate 901 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the BAW resonator 903 includes: a reflective layer 9031 on the substrate 901; an electrode layer 9033 provided over the substrate 901, the electrode layer 9033 including a protrusion 9033a provided over the reflective layer 9031; a piezoelectric layer 9035 located on the substrate 901, the piezoelectric layer 9035 including a protrusion 9035a located above the protrusion 9033 a; an electrode layer 9037 which is located on the piezoelectric layer 9035, wherein the electrode layer 9037 includes a protrusion 9037a which is located on the protrusion 9035 a; wherein a resonance region (i.e., an overlapping region of the electrode layer 9033 and the electrode layer 9037) is located above the reflective layer 9031.

In this embodiment, the cross-section a of the reflective layer 9031 is arched. In this embodiment, the reflective layer 9031 is a cavity, that is, a cavity 9031.

In this embodiment, the material of the electrode layer 9033 includes, but is not limited to, at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium. In this embodiment, the protrusion height of the protrusion 9033a is greater than or equal to the thickness of the reflective layer 9031 (i.e., the depth of the cavity 9031). In this embodiment, the cross section a of the protrusion 9033a is arched.

In this embodiment, the material of the piezoelectric layer 9035 includes, but is not limited to, at least one of the following: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate.

In this embodiment, the protrusion height of the protrusion 9035a is greater than or equal to the thickness of the reflective layer 9031 (i.e., the depth of the cavity 9031). In this embodiment, the cross section a of the protrusion 9035a is arched.

In this embodiment, the material of the electrode layer 9037 includes, but is not limited to, at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium. In this embodiment, the protrusion height of the protrusion 9037a is greater than or equal to the thickness of the reflective layer 9031 (i.e., the depth of the cavity 9031). In this embodiment, the cross section a of the protrusion 9037a is arched.

In this embodiment, the passive device 905 includes, but is not limited to, at least one of the following: capacitor, inductor, resistor, and via. It should be noted that passive devices (e.g., IPDs) known to those skilled in the art can be applied to the embodiments of the present invention. In this embodiment, the passive device 905 includes a cavity 9051, which is located above the resonance region and corresponds to the cavity 9031, and the cavity 9051 may optimize the height of the monolithic filter device. In another embodiment, the cavity may be formed on the upper side of the resonance region by raising the passive device.

In this embodiment, first ends of the two connectors 907 are electrically connected to the electrode layer 9033 and the electrode layer 9037, respectively, and a second end of the connector 907 is electrically connected to the passive device 905. In this embodiment, the connector 907 includes but is not limited to at least one of the following: electrical leads, bumps (bump), lands (pad), vias. It should be noted that the connection structure known to those skilled in the art can be applied to the embodiments of the present invention.

In this embodiment, the filtering apparatus 900 further includes: a seal 909 located between the BAW resonator device 903 and the passive device 905, at least surrounding the cavity 9051, for sealing the cavity 9051.

Fig. 10 is a schematic structural diagram of a cross section a of a filter device 1000 according to an embodiment of the present invention.

As shown in fig. 10, an embodiment of the present invention provides a filtering apparatus 1000 including: a substrate 1010, the substrate 1010 being a wafer substrate; a BAW resonating device 1030 located above the substrate 1010; and a passive device 1050 located above the BAW resonating device 1030; wherein the BAW resonating device 1030 and the passive device 1050 are electrically connected by a connector 1070.

In this embodiment, the substrate 1010 and the passive device 1050 are respectively located on both sides of the BAW resonance device 1030. In this embodiment, the substrate 1010, the BAW resonating device 1030, and the passive device 1050 are located in one wafer.

In this embodiment, the material of the substrate 1010 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the BAW resonance device 1030 includes: a reflective layer 1031 on the substrate 1010; an electrode layer 1033 on the reflective layer 1031, wherein the substrate 1010 and the electrode layer 1033 are respectively located at two sides of the reflective layer 1031; a piezoelectric layer 1035, located on the reflective layer 1031, covering the electrode layer 1033, the piezoelectric layer 1035 including a protrusion 1035a located above the electrode layer 1033; and an electrode layer 1037 on the piezoelectric layer 1035, the electrode layer 1037 including a protrusion 1037a on the protrusion 1035 a; wherein a resonance region (i.e., a region where the electrode layer 1033 and the electrode layer 1037 overlap) is located above the reflective layer 1031.

In this embodiment, the reflection layer 1031 includes a plurality of sub reflection layers 1031a and a plurality of sub reflection layers 1031b, wherein the sub reflection layers 1031a and the sub reflection layers 1031b are alternately disposed.

In this embodiment, the sub-reflection layer 1031a and the sub-reflection layer 1031b are made of different materials, so that the acoustic impedance of the sub-reflection layer 1031a and the acoustic impedance of the sub-reflection layer 1031b are different. In this embodiment, the material of the sub-reflective layer 1031a includes, but is not limited to, at least one of the following: silicon oxycarbide, silicon nitride, silicon dioxide, aluminum nitride, tungsten, molybdenum. In this embodiment, the material of the sub-reflective layer 1031b includes, but is not limited to, at least one of the following: silicon oxycarbide, silicon nitride, silicon dioxide, aluminum nitride, tungsten, molybdenum.

In the present embodiment, the reflective layer 1031 is a quarter-wave Bragg mirror (quartz-wave Bragg mirror). In this embodiment, the thickness of the sub-reflection layer 1031a is twice the thickness of the sub-reflection layer 1031 b. In another embodiment, the sub-reflective layers are of uniform thickness. It should be noted that the quarter-wave bragg reflector in this embodiment is only one specific embodiment, the present invention is not limited by the specific embodiment, and other acoustic reflection layers known to those skilled in the art may also be applied to the embodiments of the present invention.

In this embodiment, the material of the electrode layer 1033 includes, but is not limited to, at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium.

In this embodiment, the material of the piezoelectric layer 1035 includes, but is not limited to, at least one of: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate. In this embodiment, the height of the projection 1035a is greater than or equal to the thickness of the electrode layer 1033. In this embodiment, the cross section a of the projection 1035a is rectangular. In another embodiment, the first protrusion has a trapezoidal cross-section a.

In this embodiment, the material of the electrode layer 1037 includes, but is not limited to, at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium. In this embodiment, the height of the protrusion 1037a is greater than or equal to the thickness of the electrode layer 1033. In this embodiment, the cross section a of the protrusion 1037a is rectangular. In another embodiment, the second protrusion has a trapezoidal cross-section a.

In this embodiment, the passive device 1050 includes, but is not limited to, at least one of: capacitor, inductor, resistor, and via. It should be noted that passive devices (e.g., IPDs) known to those skilled in the art can be applied to the embodiments of the present invention. In this embodiment, the passive device 1050 includes a cavity 1051 above the resonance region, and the cavity 1051 can optimize the height of the monolithic filter device. In another embodiment, the cavity may be formed on the upper side of the resonance region by raising the passive device.

In this embodiment, first ends of the two connecting members 1070 are electrically connected to the electrode layer 1033 and the electrode layer 1037, respectively, and a second end of the connecting member 1070 is electrically connected to the passive device 1050. In this embodiment, the connecting element 1070 includes, but is not limited to, at least one of the following: electrical leads, bumps (bump), lands (pad), vias. It should be noted that the connection structure known to those skilled in the art can be applied to the embodiments of the present invention.

In this embodiment, the filtering apparatus 1000 further includes: a seal 1090 located between the BAW resonating device 1030 and the passive device 1050, surrounding at least the cavity 1051, for sealing the cavity 1051.

Fig. 11 is a schematic structural diagram of a cross section a of a filtering apparatus 1100 according to an embodiment of the present invention.

As shown in fig. 11, an embodiment of the present invention provides a filtering apparatus 1100 including: a substrate 1110, the substrate 1110 being a wafer substrate; a SAW resonator device 1130 located above the substrate 1110; and a passive device 1150 located above the SAW resonating device 1130; wherein the SAW resonating device 1130 is electrically connected to the passive device 1150 via a connection 1170.

In this embodiment, the first side of the SAW resonating device 1130 is the substrate 1110 and the second side of the SAW resonating device 1130 is the passive device 1150, wherein the first side of the SAW resonating device 1130 is opposite the second side. In this embodiment, the substrate 1110, the SAW resonant device 1130, and the passive device 1150 are located in one wafer.

In this embodiment, the material of the substrate 1110 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the SAW resonator device 1130 includes: a piezoelectric layer 1131 on the substrate 1110; and the electrode layer 1133 is located on the piezoelectric layer 1131, and the piezoelectric layer 1131 and the passive device 1150 are respectively located on two sides of the electrode layer 1133.

In this embodiment, the material of the piezoelectric layer 1131 includes, but is not limited to, at least one of the following: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate.

In this embodiment, the electrode layer 1133 includes an InterDigital Transducer (IDT), wherein the IDT includes a plurality of electrode strips 1133a and a plurality of electrode strips 1133 b.

In this embodiment, the electrode stripes 1133a and the electrode stripes 1133b have different polarities. In this embodiment, the electrode strips 1133a and the electrode strips 1133b are alternately arranged. In this embodiment, the adjacent electrode strips 1133a and 1133b are spaced at the same distance. In another embodiment, the separation distance between two adjacent electrode strips is varied.

It should be noted that IDT structures known to those skilled in the art can be applied to the embodiments of the present invention.

In this embodiment, the passive device 1150 includes but is not limited to at least one of the following: capacitor, inductor, resistor, and via. It should be noted that passive devices (e.g., IPDs) known to those skilled in the art can be applied to the embodiments of the present invention. In this embodiment, the passive device 1150 includes a cavity 1151 over the electrode layer 1133, and the cavity 1151 can optimize the height of the monolithic filter device. In another embodiment, the cavity may be formed on the upper side of the electrode layer by raising the passive device.

In this embodiment, the first ends of the two connectors 1170 are electrically connected to the plurality of electrode strips 1133a and the plurality of electrode strips 1133b, respectively, and the second end of the connector 1170 is electrically connected to the passive device 1150. In this embodiment, the connecting element 1170 includes, but is not limited to, at least one of the following: electrical leads, bumps (bump), lands (pad), vias. It should be noted that the connection structure known to those skilled in the art can be applied to the embodiments of the present invention.

In this embodiment, the filtering apparatus 1100 further includes: a seal 1190 is positioned on the piezoelectric layer 1131 between the piezoelectric layer 1131 and the passive device 1150, surrounding at least the cavity 1151, for sealing the cavity 1151.

It should be noted that integrating the SAW resonator device and the passive device into a single wafer to form a filtering device can broaden the passband bandwidth, have high out-of-band rejection, and reduce the space occupied in the RF front-end chip. Furthermore, integrating the resonator device and the passive device into one wafer can reduce the loss of electrical transmission (the electrical transmission path is shorter) compared to electrically connecting the monolithic resonator device and the monolithic passive device, thereby improving the filtering performance.

Fig. 12 is a schematic structural diagram of a cross section a of a filter device 1200 according to an embodiment of the present invention.

As shown in fig. 12, an embodiment of the present invention provides a filtering apparatus 1200 including: a substrate 1210, the substrate 1210 being a wafer substrate; a SAW resonator device 1230 located above the substrate 1210; and a passive device 1250 located above the SAW resonating device 1230; wherein the SAW resonant device 1230 is electrically coupled to the passive device 1250 via a connector 1270.

In this embodiment, the substrate 1210 and the passive device 1250 are located on both sides of the SAW resonating device 1230, respectively. In this embodiment, the substrate 1210, the SAW resonating device 1230, and the passive device 1250 are located in one wafer.

In this embodiment, the material of the substrate 1210 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the SAW resonating device 1230 includes: an intermediate layer 1231 on the substrate 1210; a piezoelectric layer 1233 on the intermediate layer 1231, the substrate 1210 and the piezoelectric layer 1233 being respectively located at both sides of the intermediate layer 1231; an electrode layer 1235 on the piezoelectric layer 1233, wherein the piezoelectric layer 1233 and the passive device 1250 are respectively located on two sides of the electrode layer 1235.

In this embodiment, the material of the intermediate layer 1231 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.

In this embodiment, the material of the piezoelectric layer 1233 includes, but is not limited to, at least one of the following: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate. It should be noted that the acoustic impedance of the material of the intermediate layer 1231 is different from the acoustic impedance of the material of the piezoelectric layer 1233, so that the leakage wave can be blocked. Furthermore, if the material of the intermediate layer 1231 (e.g., silicon dioxide) and the material of the piezoelectric layer 1233 have opposite Temperature Frequency shift characteristics, the Temperature Coefficient of Frequency (TCF) of the resonance device can be reduced toward 0 ppm/deg.c, thereby improving Frequency-Temperature stability, i.e., the intermediate layer 1231 is a Temperature compensation layer.

In this embodiment, the electrode layer 1235 includes an IDT, wherein the IDT includes a plurality of electrode strips 1235a and a plurality of electrode strips 1235 b.

In this embodiment, the plurality of electrode stripes 1235a and 1235b have different polarities. In this embodiment, the electrode strips 1235a and 1235b are alternately disposed. In this embodiment, the spacing distance between the adjacent electrode strips 1235a and 1235b is uniform. In another embodiment, the separation distance between two adjacent electrode strips is varied.

In this embodiment, the passive devices 1250 include, but are not limited to, at least one of: capacitor, inductor, resistor, and via. It should be noted that passive devices (e.g., IPDs) known to those skilled in the art can be applied to the embodiments of the present invention. In this embodiment, the passive device 1250 includes a cavity 1251 above the electrode layer 1235, and the cavity 1251 can optimize the height of the monolithic filter device. In another embodiment, the cavity may be formed on the upper side of the electrode layer by raising the passive device.

In this embodiment, the first ends of the two connectors 1270 are electrically connected to the plurality of electrode bars 1235a and the plurality of electrode bars 1235b, respectively, and the second end of the connector 1270 is electrically connected to the passive device 1250. In this embodiment, the connector 1270 includes but is not limited to at least one of the following: electrical leads, bumps (bump), lands (pad), vias. It should be noted that the connection structure known to those skilled in the art can be applied to the embodiments of the present invention.

In this embodiment, the filtering apparatus 1200 further includes: a seal 1290 on the piezoelectric layer 1233 between the piezoelectric layer 1233 and the passive device 1250 surrounding at least the cavity 1251 for sealing the cavity 1251.

Fig. 13 is a schematic structural diagram of a cross section a of a filter device 1300 according to an embodiment of the present invention.

As shown in fig. 13, an embodiment of the present invention provides a filtering apparatus 1300 including: a substrate 1310, the substrate 1310 being a wafer substrate; a SAW resonator device 1330 located over the substrate 1310; and a passive device 1350 located above the SAW resonating device 1330; wherein the SAW resonator device 1330 and the passive device 1350 are electrically connected by a connection 1370.

In this embodiment, the substrate 1310 and the passive device 1350 are respectively located at two sides of the SAW resonator device 1330. In this embodiment, the substrate 1310, the SAW resonant device 1330 and the passive devices 1350 are in one wafer.

In this embodiment, the material of the substrate 1310 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the SAW resonator 1330 includes: an intermediate layer 1331 on the substrate 1310; an intermediate layer 1333 on the intermediate layer 1331, the substrate 1310 and the intermediate layer 1333 being respectively located at both sides of the intermediate layer 1331; a piezoelectric layer 1335 on the intermediate layer 1333; an electrode layer 1337 on the piezoelectric layer 1335, wherein the intermediate layer 1333 and the electrode layer 1337 are respectively disposed on both sides of the piezoelectric layer 1335.

In this embodiment, the material of the middle layer 1331 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.

In this embodiment, the material of the middle layer 1333 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.

In this embodiment, the material of the piezoelectric layer 1335 includes, but is not limited to, at least one of the following: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate.

It should be noted that the acoustic impedance of the material of the intermediate layer 1331 is different from the acoustic impedance of the material of the intermediate layer 1333, and the acoustic impedance of the material of the intermediate layer 1333 is different from the acoustic impedance of the material of the piezoelectric layer 1335, so that leakage waves can be blocked. Furthermore, if the material of the intermediate layer 1333 (e.g., silicon dioxide) and the material of the piezoelectric layer 1335 have opposite temperature-frequency-shift characteristics, the TCF of the resonator device can be reduced towards 0 ppm/c, thereby increasing the frequency-temperature stability, i.e., the intermediate layer 1333 is a temperature compensation layer.

In this embodiment, the electrode layer 1337 includes an IDT, wherein the IDT includes a plurality of electrode strips 1337a and a plurality of electrode strips 1337 b.

In this embodiment, the plurality of electrode strips 1337a and the plurality of electrode strips 1337b have different polarities. In this embodiment, the electrode strips 1337a are alternately arranged with the electrode strips 1337 b. In this embodiment, the

adjacent electrode strips

1337a and 1337b are spaced at the same distance. In another embodiment, the separation distance between two adjacent electrode strips is varied.

In this embodiment, the passive devices 1350 include, but are not limited to, at least one of: capacitor, inductor, resistor, and via. It should be noted that passive devices (e.g., IPDs) known to those skilled in the art can be applied to the embodiments of the present invention. In this embodiment, the passive device 1350 includes a cavity 1351 above the electrode layer 1337, and the cavity 1351 can optimize the height of the monolithic filter device. In another embodiment, the cavity may be formed on the upper side of the electrode layer by raising the passive device.

In this embodiment, the first ends of the two connecting members 1370 are electrically connected to the plurality of electrode strips 1337a and the plurality of electrode strips 1337b, respectively, and the second end of the connecting member 1370 is electrically connected to the passive device 1350. In this embodiment, the connector 1370 includes, but is not limited to, at least one of: electrical leads, bumps (bump), lands (pad), vias. It should be noted that the connection structure known to those skilled in the art can be applied to the embodiments of the present invention.

In this embodiment, the filtering apparatus 1300 further includes: a seal 1390 on the piezoelectric layer 1335 between the piezoelectric layer 1335 and the passive device 1350 surrounds at least the cavity 1351 for sealing the cavity 1351.

Fig. 14 is a schematic structural diagram of a cross section a of a filtering apparatus 1400 according to an embodiment of the present invention.

As shown in fig. 14, an embodiment of the present invention provides a filtering apparatus 1400 including: a substrate 1410, the substrate 1410 being a wafer substrate; a SAW resonator 1430 located above the substrate 1410; and a passive device 1450, located above the SAW resonating device 1430; wherein the SAW resonating device 1430 is electrically connected to the passive device 1450 via a connection 1470.

In this embodiment, the substrate 1410 and the passive device 1450 are respectively located at both sides of the SAW resonating device 1430. In this embodiment, the substrate 1410, the SAW resonant device 1430, and the passive device 1450 are located in one wafer.

In this embodiment, the material of the substrate 1410 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the SAW resonator 1430 includes: a reflective layer 1431 on the substrate 1410; a piezoelectric layer 1433 on the reflective layer 1431, the substrate 1410 and the piezoelectric layer 1433 being located on both sides of the reflective layer 1431, respectively; an electrode layer 1435 on the piezoelectric layer 1433.

In this embodiment, the reflective layer 1431 includes a plurality of sub-reflective layers 1431a and a plurality of sub-reflective layers 1431b, wherein the sub-reflective layers 1431a and the sub-reflective layers 1431b are alternately disposed.

In this embodiment, the sub-reflective layer 1431a and the sub-reflective layer 1431b are made of different materials, so that the sub-reflective layer 1431a and the sub-reflective layer 1431b have different acoustic impedances. In this embodiment, the material of the sub-reflective layer 1431a includes, but is not limited to, at least one of the following: silicon oxycarbide, silicon nitride, silicon dioxide, aluminum nitride, tungsten, molybdenum. In this embodiment, the material of the sub-reflective layer 1431b includes, but is not limited to, at least one of the following: silicon oxycarbide, silicon nitride, silicon dioxide, aluminum nitride, tungsten, molybdenum.

In this embodiment, the reflective layer 1431 is a quarter-wave Bragg mirror (quartz-wave Bragg mirror). In this embodiment, the thickness of the sub-reflective layer 1431a is twice the thickness of the sub-reflective layer 1431 b. In another embodiment, the sub-reflective layers are of uniform thickness. It should be noted that the quarter-wave bragg reflector in this embodiment is only one specific embodiment, the present invention is not limited by the specific embodiment, and other acoustic reflection layers known to those skilled in the art may also be applied to the embodiments of the present invention.

In this embodiment, the material of the piezoelectric layer 1433 includes, but is not limited to, at least one of: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate.

In this embodiment, the electrode layer 1435 includes an IDT, wherein the IDT includes a plurality of electrode strips 1435a and a plurality of electrode strips 1435 b.

In this embodiment, the plurality of

electrode strips

1435a and 1435b have different polarities. In this embodiment, the electrode strips 1435a are alternately positioned with the electrode strips 1435 b. In this embodiment, the

electrode strips

1435a and 1435b adjacent to each other are spaced at a uniform distance. In another embodiment, the separation distance between two adjacent electrode strips is varied.

In this embodiment, the passive device 1450 includes, but is not limited to, at least one of the following: capacitor, inductor, resistor, and via. It should be noted that passive devices (e.g., IPDs) known to those skilled in the art can be applied to the embodiments of the present invention. In this embodiment, the passive device 1450 includes a cavity 1451 above the electrode layer 1435, and the cavity 1451 may optimize the height of the monolithic filter device. In another embodiment, the cavity may be formed on the upper side of the electrode layer by raising the passive device.

In this embodiment, the first ends of the two connecting members 1470 are electrically connected to the

electrode strips

1435a and 1435b, respectively, and the second end of the connecting member 1470 is electrically connected to the passive device 1450. In this embodiment, the attachment 1470 includes, but is not limited to, at least one of: electrical leads, bumps (bump), lands (pad), vias. It should be noted that the connection structure known to those skilled in the art can be applied to the embodiments of the present invention.

In this embodiment, the filtering apparatus 1400 further includes: a seal 1490 on the piezoelectric layer 1433 between the piezoelectric layer 1433 and the passive device 1450 surrounds at least the cavity 1451 for sealing the cavity 1451.

The embodiment of the utility model provides a still provide a filtering device (not shown) includes: a first substrate, a first SAW resonator device, and a first passive device; wherein the material of the first substrate includes, but is not limited to, at least one of: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate. In this embodiment, the first SAW resonator device includes a first electrode layer on the first substrate, the first electrode layer including a first IDT. In this embodiment, the first passive device is located above the first electrode layer, the first electrode layer is electrically connected to the first passive device through a first connecting member, and the first substrate and the first passive device are located on two sides of the first electrode layer, respectively.

The embodiment of the utility model provides a still provide a filtering device (not shown) includes: a second substrate, a second SAW resonant device, and a second passive device; wherein the material of the second substrate includes, but is not limited to, at least one of: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate. In this embodiment, the second SAW resonator device includes a second electrode layer on the second substrate, the second electrode layer including a second IDT. In this embodiment, the second passive device is located above the second electrode layer, the second electrode layer is electrically connected to the second passive device through a second connecting member, and the second substrate and the second passive device are located on two sides of the second electrode layer, respectively. In this embodiment, the second SAW resonator device further includes a temperature compensation layer on the second substrate and covering the second electrode layer, and the second substrate and the second passive device are respectively located on two sides of the temperature compensation layer. It should be noted that the material of the temperature compensation layer (e.g., silicon dioxide) and the material of the second substrate have opposite temperature frequency shift characteristics, so that the frequency temperature coefficient of the resonant device is reduced to 0 ppm/deg.c, thereby improving the frequency-temperature stability.

Fig. 15-17 illustrate various embodiments of the present invention, employing different passive devices, but the present invention may also be implemented in other ways than those described herein, and thus the present invention is not limited by the embodiments disclosed below.

Fig. 15a is a schematic structural diagram of a cross section a of a filter device 1500 according to an embodiment of the present invention.

As shown in fig. 15a, an embodiment of the present invention provides a filter device 1500 including: a substrate 1510, wherein the substrate 1510 is a wafer substrate; a resonating device 1530 located above the substrate 1510; and a passive device 1550 located above the resonant device 1530; wherein the resonant device 1530 and the passive device 1550 are electrically connected by a connection 1570.

In this embodiment, the substrate 1510 is located on a first side of the resonating device 1530 and the passive device 1550 is located on a second side of the resonating device 1530, wherein the first side and the second side of the resonating device 1530 are opposite. In this embodiment, the substrate 1510, the resonating devices 1530, and the passive devices 1550 are located in one wafer.

In this embodiment, the material of the substrate 1510 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the resonance device 1530 includes, but is not limited to, at least one of the following: SAW resonator devices, BAW resonator devices. In this embodiment, the resonant device 1530 includes an active layer 1531, and the active layer 1531 includes a piezoelectric layer (not shown) and at least one electrode layer (not shown).

In this embodiment, the passive device 1550 includes: an intermediate layer 1551, the intermediate layer 1551 comprising a capacitor 1553; a substrate 1555 positioned on the intermediate layer 1551; a through hole 1557a penetrating through the passive device 1550, wherein a first end of an upper side of the through hole 1557a is used for connecting an input end of the filter device 1500; a through hole 1557b penetrating through the passive device 1550, wherein a first end of an upper side of the through hole 1557b is used for connecting an output end of the filter device 1500; a through hole 1557c embedded in the intermediate layer 1551, wherein a first end of the upper side of the through hole 1557c is electrically connected with a second end of the lower side of the capacitor 1553; a through hole 1557d penetrates through the substrate 1555, a first end of the upper side of the through hole 1557d is used for grounding, and a second end of the lower side of the through hole 1557d is electrically connected with a first end of the upper side of the capacitor 1553.

In this embodiment, the material of the intermediate layer 1551 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.

In this embodiment, the intermediate layer 1551 further includes a cavity 1559 located above the active layer 1531, and the cavity 1559 may optimize a height of the monolithic filter device. In another embodiment, the cavity may be formed on the upper side of the active layer by raising the passive device.

In this embodiment, the capacitor 1553 is a Metal-Insulator-Metal (MIM) capacitor. In this embodiment, the capacitor 1553 is formed by a semiconductor process. It should be noted that the MIM capacitor in this embodiment is only one specific embodiment, and the present invention is not limited to the specific embodiment, and other capacitors manufactured by semiconductor processes known to those skilled in the art, for example, a Metal-Oxide-Metal (MOM) capacitor, can also be applied to the embodiments of the present invention.

In this embodiment, the material of the substrate 1555 includes, but is not limited to, at least one of: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the connecting member 1570 includes: a bump 1571a electrically connected to a first end (e.g., a first electrode) of the active layer 1531; a bump 1571b electrically connected to a second end (e.g., a second electrode) of the active layer 1531; a land 1573a on the bump 1571a, an upper side of the land 1573a electrically connecting a second end of a lower side of the through hole 1557a, and a lower side of the land 1573a electrically connecting the bump 1571 a; a connection pad 1573b located on the bump 1571b, wherein an upper side of the connection pad 1573b is electrically connected to a second end of the lower side of the through hole 1557b and a second end of the lower side of the through hole 1557c, and a lower side of the connection pad 1573b is electrically connected to the bump 1571 b.

In this embodiment, the filtering apparatus 1500 further includes: a seal 1590 located between the resonating device 1530 and the passive device 1550 surrounding at least the cavity 1559 for sealing the cavity 1559.

Fig. 15b is an equivalent circuit diagram of a filtering apparatus 1500 according to an embodiment of the present invention.

As shown in fig. 15b, the equivalent circuit diagram of the filtering apparatus 1500 includes: the resonant device 1530 and the capacitor 1553; wherein, a first end of the resonance device 1530 is connected to the input end in; a second end of the resonant device 1530 is electrically connected to a first end of the capacitor 1553; the second end of the resonance device 1530 is also connected to the output terminal out; the first end of the capacitor 1553 is also connected with the output end out; a second terminal of the capacitor 1553 is grounded.

It should be noted that integrating the resonating means and the passive means into one wafer to form the filtering means allows for a wider passband bandwidth, high out-of-band rejection, and reduced space usage in the RF front-end chip. Furthermore, integrating the resonator device and the passive device into one wafer can reduce the loss of electrical transmission (the electrical transmission path is shorter) compared to electrically connecting the monolithic resonator device and the monolithic passive device, thereby improving the filtering performance.

Fig. 16a is a schematic structural diagram of a cross section a of a filter device 1600 according to an embodiment of the present invention.

As shown in fig. 16a, an embodiment of the present invention provides a filtering apparatus 1600 including: a substrate 1610, said substrate 1610 being a wafer substrate; a resonating means 1630 located over the substrate 1610; and a passive device 1650 over the resonating device 1630; wherein the resonant device 1630 is electrically connected to the passive device 1650 through connection 1670.

In this embodiment, the substrate 1610 is located on a first side of the resonating means 1630 and the passive device 1650 is located on a second side of the resonating means 1630, wherein the first side and the second side of the resonating means 1630 are opposite. In this embodiment, the substrate 1610, the resonating device 1630, and the passive device 1650 are located in one wafer.

In this embodiment, the material of the substrate 1610 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the resonant device 1630 includes, but is not limited to, at least one of: SAW resonator devices, BAW resonator devices. In this embodiment, the resonant device 1630 includes an active layer 1631, and the active layer 1631 includes a piezoelectric layer (not shown) and at least one electrode layer (not shown).

In this embodiment, the passive device 1650 includes: middle layer 1651, the middle layer 1651 comprising inductor 1653; a base 1655 on the intermediate layer 1651; a through hole 1657a penetrating through the passive device 1650, wherein a first end on the upper side of the through hole 1657a is used for connecting with an input end of the filter device 1600; a through hole 1657b penetrating through the passive device 1650, wherein a first end on the upper side of the through hole 1657b is used for connecting an output end of the filter device 1600; a via 1657c penetrating the passive device 1650, a first end of the upper side of the via 1657c being used for grounding, and a second end of the lower side of the via 1657c being electrically connected to the first end of the inductor 1653 through a connection wire 1657 d.

In this embodiment, the material of the middle layer 1651 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.

In this embodiment, the middle layer 1651 further comprises a cavity 1659 above the active layer 1631, and the cavity 1659 can optimize the height of the monolithic filter device. In another embodiment, the cavity may be formed on the upper side of the active layer by raising the passive device.

In this embodiment, the inductor 1653 is a spiral inductor (spiral inductor). In this embodiment, the inductor 1653 is formed by a semiconductor process. It should be noted that the spiral inductor in this embodiment is only one specific embodiment, the present invention is not limited to the specific embodiment, and other inductors manufactured by semiconductor processes known to those skilled in the art may also be applied to the embodiments of the present invention.

In this embodiment, the thickness of the inductor 1653 is smaller than the thickness of the intermediate layer 1651. In another embodiment, the thickness of the inductor is equal to the thickness of the intermediate layer.

In this embodiment, the material of the base 1655 includes, but is not limited to, at least one of: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the connecting member 1670 includes: a bump 1671a electrically connected to a first end (e.g., a first electrode) of the active layer 1631; a bump 1671b electrically connected to a second end (e.g., a second electrode) of the active layer 1631; a land 1673a on the bump 1671a, an upper side of the land 1673a electrically connected to a second end of the lower side of the via 1657a, and a lower side of the land 1673a electrically connected to the bump 1671 a; and a land 1673b on the bump 1671b, wherein an upper side of the land 1673b is electrically connected to the second end of the via 1657b and the second end of the inductor 1653, and a lower side of the land 1673b is electrically connected to the bump 1671 b.

In this embodiment, the filtering apparatus 1600 further includes: a seal 1690 is positioned between the resonating device 1630 and the passive device 1650, surrounding at least the cavity 1659, for sealing the cavity 1659.

Fig. 16B is a schematic structural diagram of a cross section B of a filtering apparatus 1600 according to an embodiment of the present invention.

In this embodiment, the cross section B of the inductor 1653 is quadrilateral. In another embodiment, the cross-sectional B shape of the inductor includes, but is not limited to, at least one of: pentagonal, hexagonal, octagonal, circular, elliptical. In this embodiment, the inductor 1653 includes two layers of coils. In another embodiment, the inductor comprises three or more layers of coils. It should be noted that the spiral inductor in this embodiment is only one specific embodiment, the present invention is not limited by the specific embodiment, and other spiral inductors known to those skilled in the art may also be applied to the embodiments of the present invention.

In this embodiment, the cross section B of the cavity 1659 is quadrilateral. In another embodiment, the cross-sectional B shape of the cavity includes, but is not limited to, at least one of: pentagonal, hexagonal, octagonal, circular, elliptical.

Fig. 16c is an equivalent circuit diagram of a filtering apparatus 1600 according to an embodiment of the present invention.

As shown in fig. 16c, the equivalent circuit diagram of the filtering apparatus 1600 includes: the resonant device 1630 and the inductor 1653; wherein, the first end of the resonant device 1630 is connected to the input terminal in; a second end of the resonating means 1630 is electrically connected to a first end of the inductor 1653; the second terminal of the resonant device 1630 is further connected to an output terminal out; the first terminal of the inductor 1653 is further connected to the output terminal out; a second terminal of the inductor 1653 is connected to ground.

Fig. 17a is a schematic structural diagram of a cross section a of a filter device 1700 according to an embodiment of the present invention.

As shown in fig. 17a, an embodiment of the present invention provides a filtering apparatus 1700 including: a substrate 1710, the substrate 1710 being a wafer substrate; a resonating device 1730 located above the substrate 1710; and a passive device 1750 located above the resonating device 1730; wherein the resonating device 1730 and the passive device 1750 are electrically connected by a connection 1770.

In this embodiment, the substrate 1710 is positioned on a first side of the resonant device 1730 and the passive device 1750 is positioned on a second side of the resonant device 1730, where the first and second sides of the resonant device 1730 are opposite. In this embodiment, the substrate 1710, the resonating device 1730, and the passive device 1750 are located in one wafer.

In this embodiment, the material of the substrate 1710 includes, but is not limited to, at least one of: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the resonance device 1730 includes but is not limited to at least one of the following: SAW resonator devices, BAW resonator devices. In the present embodiment, the resonant device 1730 includes an active layer 1731, and the active layer 1731 includes a piezoelectric layer (not shown) and at least one electrode layer (not shown).

In this embodiment, the passive device 1750 includes: an intermediate layer 1751, the intermediate layer 1751 comprising a resistor 1753; a substrate 1755 positioned on the intermediate layer 1751; a through hole 1757a penetrating through the passive device 1750, wherein a first end on the upper side of the through hole 1757a is used for connecting an input end of the filter device 1700; a through hole 1757b penetrating through the passive device 1750, wherein a first end on the upper side of the through hole 1757b is used for connecting the output end of the filter device 1700; a via 1757c penetrating the passive device 1750, a first end of an upper side of the via 1757c being used for grounding, and a second end of a lower side of the via 1757c being electrically connected to a first end of the resistor 1753 through a connection line 1757 d.

In this embodiment, the material of the intermediate layer 1751 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.

In this embodiment, the middle layer 1751 further includes a cavity 1759 located above the active layer 1731, and the cavity 1759 may optimize the height of the monolithic filter device. In another embodiment, the cavity may be formed on the upper side of the active layer by raising the passive device.

In this embodiment, the resistor 1753 is formed by a semiconductor process. It should be noted that the resistor in this embodiment is only one specific embodiment, the present invention is not limited to the specific embodiment, and other resistors manufactured by semiconductor processes known to those skilled in the art may also be applied to the embodiments of the present invention.

In this embodiment, the material of the substrate 1755 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the connecting member 1770 includes: a bump 1771a electrically connected to a first end (e.g., a first electrode) of the active layer 1731; a bump 1771b electrically connected to a second end (e.g., a second electrode) of the active layer 1731; a land 1773a on the bump 1771a, an upper side of the land 1773a electrically connected to a second end of a lower side of the through hole 1757a, and a lower side of the land 1773a electrically connected to the bump 1771 a; and a land 1773b on the bump 1771b, wherein an upper side of the land 1773b is electrically connected to a second end of the lower side of the through hole 1757b and a second end of the resistor 1753, and a lower side of the land 1773b is electrically connected to the bump 1771 b.

In this embodiment, the filtering apparatus 1700 further includes: a seal 1790 between the resonating device 1730 and the passive device 1750 surrounding at least the cavity 1759 for sealing the cavity 1759.

Fig. 17b is a schematic equivalent circuit diagram of a filtering apparatus 1700 according to an embodiment of the present invention.

As shown in fig. 17b, the equivalent circuit diagram of the filtering apparatus 1700 includes: the resonant device 1730 and the resistor 1753; a first end of the resonance device 1730 is connected to the input terminal in; the second end of the resonating means 1730 is electrically connected to the first end of the resistor 1753; the second terminal of the resonant device 1730 is further connected to the output terminal out; the first terminal of the resistor 1753 is further connected to the output terminal out; the second terminal of the resistor 1753 is connected to ground.

Fig. 18 illustrates one embodiment of the invention, but the invention may be practiced in other ways than those illustrated and described herein, and thus the invention is not limited to the embodiments disclosed below.

Fig. 18a is a schematic structural diagram of a cross section a of a filtering apparatus 1800 according to an embodiment of the present invention.

As shown in fig. 18a, an embodiment of the present invention provides a filtering apparatus 1800 including: a substrate 1810, the substrate 1810 being a wafer substrate; a BAW resonating device 1820 located above the substrate 1810; a BAW resonating device 1830 located over the substrate 1810; and an Integrated Passive Device (IPD)1840 over the BAW resonating means 1820 and the BAW resonating means 1830; wherein the BAW resonating device 1820 is electrically connected with the IPD 1840 through a connection 1850, and the BAW resonating device 1830 is electrically connected with the IPD 1840 through the connection 1860.

In this embodiment, the substrate 1810 and the IPD 1840 are respectively located at two sides of the BAW resonance device 1820, and the substrate 1810 and the IPD 1840 are respectively located at two sides of the BAW resonance device 1830. In this embodiment, the substrate 1810, the BAW resonating means 1820, the BAW resonating means 1830, and the IPD 1840 are located in one wafer.

In this embodiment, the material of the substrate 1810 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide.

In this embodiment, the BAW resonant device 1820 includes but is not limited to: a piezoelectric layer (not labeled) and

electrode layers

1821 and 1822 on either side of the piezoelectric layer. It should be noted that the BAW resonator 1820 in this embodiment is only a specific embodiment, and the present invention is not limited to the specific embodiment, and other BAW resonators or SAW resonators known to those skilled in the art may also be applied to the embodiments of the present invention.

In this embodiment, the BAW resonance device 1830 includes but is not limited to: a piezoelectric layer (not labeled) and

electrode layers

1831 and 1832 on either side of the piezoelectric layer. It should be noted that the BAW resonator 1830 in this embodiment is only a specific embodiment, and the present invention is not limited to the specific embodiment, and other BAW resonators or SAW resonators known to those skilled in the art may also be applied to the embodiments of the present invention.

In another embodiment, the filtering means comprises 3 or more than 3 BAW resonator devices or SAW resonator devices. In another embodiment, the filtering means comprises at least one BAW resonator device and at least one SAW resonator device.

In this embodiment, the IPD 1840 includes: an intermediate layer 1841 located over the BAW resonating device 1820 and the BAW resonating device 1830, the intermediate layer 1841 comprising an inductance 1842; an intermediate layer 1843 on the intermediate layer 1841, the intermediate layer 1843 comprising a capacitor 1844, a capacitor 1845 and a capacitor 1846; a substrate 1847 on the intermediate layer 1843; and a plurality of vias 1848.

In this embodiment, the material of the intermediate layer 1841 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.

In this embodiment, the intermediate layer 1841 further comprises a first cavity (not referenced) above the BAW resonator 1820, which may optimize the height of the monolithic filter device.

In this embodiment, the intermediate layer 1841 further comprises a second cavity (not referenced) above the BAW resonator 1830, which may optimize the height of the monolithic filter device.

In another embodiment, the cavity may be formed on the upper side of the resonator device by raising the passive device.

In this embodiment, the inductor 1842 is a spiral inductor. In this embodiment, the inductor 1842 is formed by a semiconductor process. It should be noted that the spiral inductor in this embodiment is only one specific embodiment, the present invention is not limited to the specific embodiment, and other inductors manufactured by semiconductor processes known to those skilled in the art may also be applied to the embodiments of the present invention.

In this embodiment, the inductor 1842 has a thickness smaller than that of the intermediate layer 1841. In another embodiment, the thickness of the inductor is equal to the thickness of the intermediate layer.

In this embodiment, the material of the intermediate layer 1843 includes, but is not limited to, at least one of: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photosensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.

In this embodiment, the capacitor 1844, the capacitor 1845, and the capacitor 1846 are MIM capacitors. In this embodiment, the capacitor 1844, the capacitor 1845, and the capacitor 1846 are formed by a semiconductor process. It should be noted that the MIM capacitor in this embodiment is only one specific embodiment, and the present invention is not limited to the specific embodiment, and capacitors manufactured by other semiconductor processes known to those skilled in the art, for example, MOM capacitors, can also be applied to the embodiments of the present invention.

In this embodiment, the electrode layer 1822 is connected to an input terminal through the connecting element 1850 and the through hole 1848; the electrode layer 1821 electrically connects the first end of the inductor 1842, the first end of the lower side of the capacitor 1844, and the first end of the lower side of the capacitor 1845 through the connector 1850 and the via 1848; a second end of the upper side of the capacitor 1844 is grounded through the through hole 1848; the second end of the inductor 1842 and the second end of the capacitor 1845 on the upper side are electrically connected to the electrode layer 1831 through the connecting member 1860 and the via 1848; the electrode layer 1831 is also electrically connected to the first end of the lower side of the capacitor 1846 through the connection 1860 and the via 1848; a second end of the upper side of the capacitor 1846 is grounded through the through hole 1848; the electrode layer 1832 is electrically connected to an output terminal through the connecting member 1860 and the via 1848.

Fig. 18b is an equivalent circuit diagram of a filtering apparatus 1800 according to an embodiment of the present invention.

As shown in fig. 18b, the equivalent circuit diagram of the filtering apparatus 1800 includes: the BAW resonating means 1820, the BAW resonating means 1830, the inductance 1842, the capacitance 1844, the capacitance 1845, and the capacitance 1846; wherein a first terminal of the BAW resonant device 1820 is connected to an input terminal in, and a second terminal of the BAW resonant device 1820 is electrically connected to a first terminal of the inductor 1842, a first terminal of the capacitor 1844, and a first terminal of the capacitor 1845; the first end of the capacitor 1844 is electrically connected with the first end of the capacitor 1845 and the first end of the inductor 1842 respectively; a second terminal of the capacitor 1844 is grounded; the first end of the inductor 1842 is also electrically connected to the first end of the capacitor 1845; a second terminal of the inductor 1842 is electrically connected to a second terminal of the capacitor 1845, a first terminal of the BAW resonator 1830 and a first terminal of the capacitor 1846, respectively; the second end of the capacitor 1845 is also electrically connected to the first end of the BAW resonating device 1830 and the first end of the capacitor 1846, respectively; the first end of the capacitor 1846 is also electrically connected to a first end of the BAW resonating means 1830; a second terminal of the capacitor 1846 is grounded; the second terminal of the BAW resonator 1830 is connected to the output terminal out.

In this embodiment, an equivalent circuit of the IPD 1840 formed by the capacitor 1844, the capacitor 1845, the capacitor 1846 and the inductor 1842 is a band-pass filter (band-pass filter) circuit. In another embodiment, the equivalent circuit of the IPD includes, but is not limited to, at least one of: a low-pass filter circuit, a high-pass filter circuit and a band-stop filter circuit.

It should be noted that the circuit in this embodiment is only one specific embodiment, and the present invention is not limited to the specific embodiment, and other circuit structures known to those skilled in the art may be adopted in the embodiments of the present invention.

Fig. 19 shows a performance diagram 1900 of an embodiment of the present invention, but the present invention can also be implemented by other filtering devices different from those described herein, and therefore the present invention is not limited by the embodiments disclosed below.

An embodiment of the present invention provides a filtering apparatus (not shown) including: a wafer substrate, a bandpass filtering device (e.g., IPD 1840 in fig. 18), a first BAW resonating device (e.g., BAW resonating device 1820 in fig. 18), and a second BAW resonating device (e.g., BAW resonating device 1830 in fig. 18); wherein the wafer substrate is located on a first side of the first and second BAW resonating devices and the band pass filtering device is located on a second side of the first and second BAW resonating devices, wherein the first and second sides of the first and second BAW resonating devices are opposite to the second side.

In this embodiment, the wafer substrate, the first BAW resonator device, the second BAW resonator device, and the band pass filter device are located in one wafer.

In this embodiment, in an equivalent circuit (not shown) of the filter device, the first BAW resonator and the second BAW resonator are respectively located on both sides of the band-pass filter device; wherein, the signal is input from the first end, firstly passes through the first BAW resonance device, then passes through the band-pass filter device, and finally passes through the second BAW resonance device, and the filtered signal is output from the second end.

As shown in fig. 19, a performance diagram 1900 of the filtering apparatus includes an insertion loss (insertion loss) curve with frequency (in GHz) on the abscissa and insertion loss (in dB) on the ordinate. The insertion loss curve includes: a first out-of-band suppression zone 1901, a band-pass zone 1903, a second out-of-band suppression zone 1905; wherein the first out-of-band rejection region 1901 is based primarily on the first BAW resonating means, the pass-band region 1903 is based primarily on the pass-band filtering means, and the second out-of-band rejection region 1905 is based primarily on the second BAW resonating means.

In this embodiment, the first out-of-band rejection region 1901 includes high out-of-band rejection (greater than-40 dB), and the second out-of-band rejection region 1905 includes high out-of-band rejection (greater than-60 dB).

It should be noted that, based on the insertion loss curve, the filtering apparatus may be applied to the 5G n79 frequency band (4.4to 5 GHz).

It should be noted that integrating the resonating means and the passive means into one wafer to form the filtering means allows for a wider passband bandwidth, high out-of-band rejection, and reduced space usage in the RF front-end chip.

The embodiment of the utility model provides a still provide a radio frequency front end device, include but not limited to: at least one filtering device and power amplifying device provided in one of the above embodiments; the filtering device is electrically connected with the power amplifying device.

The embodiment of the utility model provides a still provide a radio frequency front end device, include but not limited to: at least one filtering device and low noise amplifying device provided in one of the above embodiments; the filtering device is electrically connected with the low-noise amplifying device.

The embodiment of the utility model provides a still provide a radio frequency front end device, include but not limited to: multiplexing means comprising at least one filtering means as provided in one of the above embodiments.

The embodiment of the utility model provides a still provide a wireless communication device, include but not limited to: the rf front-end device, the antenna, and the baseband processing device provided in one of the above embodiments; the first end of the radio frequency front-end device is electrically connected with the antenna, and the second end of the radio frequency front-end device is electrically connected with the baseband processing device.

In summary, integrating the resonating devices (e.g., SAW resonating devices or BAW resonating devices) and the passive devices (e.g., IPDs) into one wafer forms RF filtering devices that can broaden passband bandwidth, have high out-of-band rejection, and reduce the space occupied in the RF front-end chip.

It is understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes in light thereof will be suggested to persons skilled in the art and are to be included within the spirit and purview of this application and scope of the appended claims.

Claims

1. A filtering apparatus, comprising: a substrate, at least one resonant device, a passive device, and a connector; wherein the at least one resonant device comprises a first side and a second side opposite the first side, the substrate being located on the first side, the passive device being located on the second side; wherein the at least one resonant device is connected with the passive device through the connector; the substrate, the at least one resonating device, and the passive device are located in one wafer.

2. The filtering arrangement as recited in claim 1, wherein said at least one resonating means comprises at least one of: surface acoustic wave resonator device, bulk acoustic wave resonator device.

3. The filtering arrangement of claim 1, wherein the passive means comprises at least one of: capacitor, inductor, resistor, and via.

4. The filtering apparatus of claim 1, wherein the passive means comprises an integrated passive means, wherein the integrated passive means is formed by a semiconductor process.

5. The filtering arrangement as recited in claim 1, wherein said connection comprises at least one of: bumps, lands, electrical leads, vias.

6. The filtering arrangement of claim 1, wherein said at least one resonating means comprises a first resonating means, said first resonating means comprising: a first cavity; a first electrode layer, at least a portion of the first electrode layer being located within or on the first cavity; a first piezoelectric layer covering the first cavity, the first cavity and the first piezoelectric layer being located on both sides of at least a portion of the first electrode layer; and the second electrode layer is positioned on the first piezoelectric layer, and the first electrode layer and the second electrode layer are positioned on two sides of the first piezoelectric layer.

7. The filter device according to claim 6, wherein the substrate includes the first cavity and a first groove that is located on one side of the first cavity in the horizontal direction and communicates with the first cavity; the first end of the first electrode layer is positioned in the first cavity, the second end of the first electrode layer is positioned in the first groove, and the depth of the first groove is equal to the thickness of the first electrode layer; the first piezoelectric layer is located on the first electrode layer, is a flat layer, and further covers the substrate.

8. The filtering arrangement of claim 6, wherein the substrate comprises the first cavity; the first electrode layer is positioned on the first cavity and covers the first cavity; the first piezoelectric layer is positioned above the substrate, covering the first electrode layer.

9. The filtering arrangement of claim 8 wherein the first piezoelectric layer includes a first protrusion, the first protrusion being located above the first electrode layer; the second electrode layer includes a second protrusion portion on the first protrusion portion.

10. The filtering arrangement as recited in claim 9 wherein the shape of said first protrusion comprises: trapezoidal and rectangular; the shape of the second protrusion includes: trapezoidal and rectangular.

11. The filtering arrangement as recited in claim 6 wherein said first cavity is located on said substrate; the first electrode layer is positioned on the substrate and comprises a third protrusion part, the third protrusion part is positioned on the first cavity, and the first cavity and the first piezoelectric layer are positioned on two sides of the third protrusion part; the first piezoelectric layer is on the substrate, the first piezoelectric layer including a fourth protrusion, the fourth protrusion being over the third protrusion; the second electrode layer includes a fifth protrusion, and the fifth protrusion is located on the fourth protrusion.

12. The filtering device according to claim 11, wherein the shape of the third protrusion includes: trapezoidal, arched, rectangular; the shape of the fourth protrusion includes: trapezoidal, arched, rectangular; the shape of the fifth protrusion includes: trapezoidal, arched, rectangular.

13. The filtering arrangement of claim 6 wherein said first resonating means further comprises: the substrate and the first piezoelectric layer are located on two sides of the first middle layer, the first middle layer is used for blocking leakage waves, the first middle layer comprises the first cavity, and the material of the first middle layer comprises polymer, insulating dielectric or polycrystalline silicon.

14. The filter device according to claim 13, wherein the first intermediate layer further comprises a second groove located on one side in the horizontal direction of the first cavity and communicating with the first cavity; the first end of the first electrode layer is positioned in the first cavity, the second end of the first electrode layer is positioned in the second groove, and the depth of the second groove is equal to the thickness of the first electrode layer; the first piezoelectric layer is located on the first electrode layer, is a flat layer, and further covers the first intermediate layer.

15. The filtering arrangement as recited in claim 13 wherein said first electrode layer is located over said first cavity, covering said first cavity; the first piezoelectric layer is located over the first intermediate layer, covering the first electrode layer.

16. The filtering arrangement of claim 6 wherein said first resonating means further comprises: the substrate and the first piezoelectric layer are located on two sides of the second middle layer, the second middle layer is used for blocking leakage waves, the first cavity is located on the second middle layer, and the second middle layer is made of polymer, insulating dielectric or polycrystalline silicon.

17. The filtering arrangement as recited in claim 16 wherein said first electrode layer is located on said second intermediate layer, said first electrode layer including a sixth protrusion, said sixth protrusion being located on said first cavity, said first cavity and said first piezoelectric layer being located on either side of said sixth protrusion; the first piezoelectric layer is located on the second intermediate layer, the first piezoelectric layer includes a seventh protrusion, and the seventh protrusion is located above the sixth protrusion; the second electrode layer includes an eighth protrusion, and the eighth protrusion is located on the seventh protrusion.

18. The filtering device according to claim 17, wherein the shape of the sixth protrusion comprises: trapezoidal, arched, rectangular; the seventh protrusion has a shape including: trapezoidal, arched, rectangular; the shape of the eighth protrusion includes: trapezoidal, arched, rectangular.

19. The filtering arrangement of claim 1, wherein said at least one resonating means comprises a second resonating means, said second resonating means comprising: a first reflective layer; a third electrode layer on the first reflective layer; a second piezoelectric layer located above the first reflective layer, covering the third electrode layer; and the fourth electrode layer is positioned on the second piezoelectric layer, and the third electrode layer and the fourth electrode layer are positioned on two sides of the second piezoelectric layer.

20. The filter device according to claim 19, wherein the first reflective layer, which is disposed on the substrate, includes first sub-reflective layers and second sub-reflective layers, the first sub-reflective layers and the second sub-reflective layers are alternately disposed, and materials of the first sub-reflective layers and the second sub-reflective layers are different.

21. The filtering arrangement as recited in claim 19 wherein said first reflective layer comprises a bragg reflective layer.

22. The filtering arrangement of claim 19 wherein the second piezoelectric layer includes a ninth protrusion, the ninth protrusion being located above the third electrode layer; the fourth electrode layer includes a tenth protrusion portion, and the tenth protrusion portion is located on the ninth protrusion portion.

23. The filtering arrangement of claim 1, wherein said at least one resonating means comprises a third resonating means, said third resonating means comprising: a third piezoelectric layer; a fifth electrode layer on the third piezoelectric layer.

24. The filtering arrangement as recited in claim 23 wherein said fifth electrode layer comprises interdigital transducing means.

25. The filtering arrangement as recited in claim 23 wherein said fifth electrode layer includes first electrode stripes and second electrode stripes, said first electrode stripes and said second electrode stripes having different polarities, said first electrode stripes and said second electrode stripes being alternately disposed.

26. The filtering arrangement as recited in claim 23 wherein said third resonating means further comprises: and the third piezoelectric layer is positioned on the third middle layer, the substrate and the third piezoelectric layer are positioned on two sides of the third middle layer, and the third middle layer is used for blocking leakage waves or temperature compensation.

27. The filtering arrangement as recited in claim 26 wherein said third resonating means further comprises: the third middle layer is positioned on the fourth middle layer, the substrate and the third middle layer are positioned on two sides of the fourth middle layer, and the fourth middle layer is used for blocking leakage waves.

28. The filtering arrangement as recited in claim 23 wherein said third resonating means further comprises: and the substrate and the third piezoelectric layer are positioned on two sides of the second reflecting layer.

29. The filtering apparatus of claim 28, wherein the second reflective layer comprises third sub-reflective layers and fourth sub-reflective layers, the third sub-reflective layers and the fourth sub-reflective layers are alternately disposed, and materials of the third sub-reflective layers and the fourth sub-reflective layers are different.

30. The filtering arrangement as recited in claim 28 wherein said second reflective layer comprises a bragg reflective layer.

31. The filter device according to claim 1, wherein the material of the substrate comprises aluminum nitride, an aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, or lead magnesium niobate-lead titanate.

32. The filtering arrangement as recited in claim 31, wherein said at least one resonating means comprises a fourth resonating means, said fourth resonating means comprising: a sixth electrode layer on the substrate; wherein the sixth electrode layer comprises interdigital transducing devices.

33. The filtering arrangement as recited in claim 32 wherein said fourth resonating means further comprises: and the temperature compensation layer is positioned on the substrate and covers the sixth electrode layer.

34. A radio frequency front end device, comprising: power amplifying means and at least one filtering means according to any one of claims 1 to 33; the power amplifying device is connected with the filtering device.

35. A radio frequency front end device, comprising: low noise amplification means and at least one filtering means according to one of claims 1 to 33; the low-noise amplifying device is connected with the filtering device.

36. A radio frequency front end device, comprising: multiplexing device comprising at least one filter device according to one of claims 1 to 33.

37. A wireless communications apparatus, comprising: an antenna, baseband processing means and a radio frequency front end means as claimed in any one of claims 34 to 36; the antenna is connected with the first end of the radio frequency front-end device; the baseband processing device is connected with the second end of the radio frequency front-end device.