CN214204262U

CN214204262U - 830nm semiconductor laser array beam combining device

Info

Publication number: CN214204262U
Application number: CN202120207544.0U
Authority: CN
Inventors: 李再金; 杨云帆; 袁毅; 杨隆杰; 赵志斌; 陈浩; 李林; 乔忠良; 曾丽娜; 曲轶
Original assignee: Hainan Normal University
Current assignee: Hainan Normal University
Priority date: 2021-01-26
Filing date: 2021-01-26
Publication date: 2021-09-14
Anticipated expiration: 2031-01-26

Abstract

The invention discloses an 830nm semiconductor laser array beam combining device which comprises an 830nm semiconductor laser array module (1), a collimating lens (2), a hollow trapezoid round table (3) and a focusing lens (4). The hollow trapezoidal round table (3) comprises an upper round table bottom surface (3-1), an outer round table side surface (3-2), a lower round table bottom surface (3-3) and an inner round table side surface (3-4). The semiconductor laser array module (1) is vertically incident to the lower bottom surface (3-3) of the hollow trapezoid round table (3) through the collimating lens (2), is totally reflected on the outer side surface (3-2) and the inner side surface (3-4) of the round table, and is incident to the focusing lens (4) through the upper bottom surface (3-1) of the round table, so that the output light power density of the semiconductor laser array is improved.

Description

830nm semiconductor laser array beam combining device

Technical Field

The invention relates to the technical field of high-power semiconductor lasers, in particular to a 830nm semiconductor laser array beam combining device.

Background

The high-power semiconductor laser has the advantages of small volume, light weight, high electro-optic conversion and the like, and is widely applied to the fields of industrial processing and military affairs. The high-power semiconductor laser cannot be directly used in the industrial processing and military fields due to the defects of large emergent light divergence angle, elliptic Gaussian beam, poor light quality and the like. In order to accelerate the direct application of high-power semiconductor laser to the industrial processing and military fields, an 830nm semiconductor laser array beam combining device is provided, and the output optical power of the 830nm semiconductor laser can be effectively improved.

Disclosure of Invention

The invention aims to provide an 830nm semiconductor laser array beam combining device.

An 830nm semiconductor laser array beam combining device comprises an 830nm semiconductor laser array module (1), a collimating lens (2), a hollow trapezoid circular truncated cone (3) and a focusing lens (4). The hollow trapezoidal round table (3) comprises an upper round table bottom surface (3-1), an outer round table side surface (3-2), a lower round table bottom surface (3-3) and an inner round table side surface (3-4).

The method is characterized in that:

the 830nm semiconductor laser array module (1) has an output wavelength of 830nm and an output power higher than 50W.

The front and back surfaces of the collimating mirror (2) are coated with 186nm TiO₂/99nm SiO₂/160nm TiO₂/97nm SiO₂The optical film of (1).

The hollow trapezoidal round table (3) comprises an upper round table bottom surface (3-1), an outer round table side surface (3-2), a lower round table bottom surface (3-3) and an inner round table side surface (3-4). The outer side surface (3-2) of the circular truncated cone and the lower bottom surface (3-3) of the circular truncated cone form an angle of 45 degrees, the inner side surface (3-4) of the circular truncated cone and the lower bottom surface (3-3) of the circular truncated cone form an angle of 135 degrees, and the upper bottom surface (3-1) of the circular truncated cone and the lower bottom surface (3-3) of the circular truncated cone are plated with 186nm TiO₂/99nm SiO₂/160nm TiO₂/97nm SiO₂The optical film of (1).

The front and back surfaces of the focusing mirror (4) are plated with 186nm TiO₂/99nm SiO₂/160nm TiO₂/97nm SiO₂The optical film of (1).

Drawings

FIG. 1 is a process diagram of an embodiment of the present invention.

Fig. 2 is a cross-sectional optical path diagram of the hollow trapezoidal circular truncated cone (3).

Detailed Description

The present invention is described in further detail below with reference to fig. 1 and 2.

The invention discloses an 830nm semiconductor laser array beam combining device which comprises an 830nm semiconductor laser array module (1), a collimating lens (2), a hollow trapezoid round table (3) and a focusing lens (4). The hollow trapezoidal round table (3) comprises an upper round table bottom surface (3-1), an outer round table side surface (3-2), a lower round table bottom surface (3-3) and an inner round table side surface (3-4).

Fig. 1 is a specific embodiment of two 830nm semiconductor laser array modules in a single vertical direction. Each 830nm semiconductor laser array module of the two 830nm semiconductor laser array modules (1) vertically enters a lower bottom surface (3-3) of the hollow trapezoidal circular truncated cone (3) through the collimating mirror (2), the outer side surface (3-2) of the hollow trapezoidal circular truncated cone (3) is totally reflected, totally reflected light beams are totally reflected through the inner side surface (3-4) of the hollow trapezoidal circular truncated cone (3), and then output through the upper bottom surface (3-1) of the hollow trapezoidal circular truncated cone (3). The output two light beams are combined and output by the 830nm semiconductor laser array module through the focusing mirror (4).

Claims

1. An 830nm semiconductor laser array beam combining device is characterized by comprising an 830nm semiconductor laser array module (1), a collimating mirror (2), a hollow trapezoid round table (3) and a focusing mirror (4); the front and back surfaces of the collimating mirror (2) are coated with 186nm TiO₂/99nm SiO₂/160nm TiO₂/97nm SiO₂The optical film of (1); the hollow trapezoid round table (3) comprises an upper round table bottom surface (3-1), an outer round table side surface (3-2), a lower round table bottom surface (3-3) and an inner round table side surface (3-4), the outer round table side surface (3-2) and the lower round table bottom surface (3-3) form an angle of 45 degrees, the inner round table side surface (3-4) and the lower round table bottom surface (3-3) form an angle of 135 degrees, and the upper round table bottom surface (3-1) and the lower round table bottom surface (3-3) are plated with 186nm TiO 3₂/99nm SiO₂/160nm TiO₂/97nm SiO₂The optical film of (1); the front and back surfaces of the focusing mirror (4) are plated with 186nm TiO₂/99nm SiO₂/160nm TiO₂/97nm SiO₂The optical film of (1).