CN214193510U - Draft tube and single crystal furnace - Google Patents
Draft tube and single crystal furnace Download PDFInfo
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- CN214193510U CN214193510U CN202023166476.2U CN202023166476U CN214193510U CN 214193510 U CN214193510 U CN 214193510U CN 202023166476 U CN202023166476 U CN 202023166476U CN 214193510 U CN214193510 U CN 214193510U
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- purity graphite
- molybdenum metal
- monocrystalline silicon
- single crystal
- inner container
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Abstract
The utility model provides a draft tube and single crystal growing furnace belongs to single crystal equipment technical field. The guide cylinder comprises a shell, an inner container and a heat insulation layer filled between the shell and the inner container, wherein the inner container comprises a molybdenum metal part and a high-purity graphite part, and the molybdenum metal part is arranged on the high-purity graphite part. On one hand, the high-purity graphite part is close to the liquid level of the silicon melt soup, and the molybdenum metal part is far away from the liquid level of the silicon melt soup, so that the diffusion of the molybdenum metal is reduced, and the quality of the monocrystalline silicon is improved; on the other hand, the molybdenum metal part positioned on the upper part of the guide shell can reflect partial heat, increase the temperature gradient and improve the single crystal pulling speed. The guide cylinder can reduce the metal impurity content of the monocrystalline silicon, improve the quality of the monocrystalline silicon and prolong the service life of the monocrystalline silicon on the basis of ensuring the pulling speed of the monocrystalline silicon.
Description
Technical Field
The utility model belongs to the technical field of single crystal equipment, concretely relates to draft tube and single crystal growing furnace.
Background
The guide shell is one of indispensable parts of the single crystal furnace and plays an important role in the growth of single crystal silicon materials. Generally, the draft tube is composed of a casing, an inner container and a heat insulation material filled between the casing and the inner container, wherein the inner container is mainly made of two materials, molybdenum metal material or high-purity graphite material.
For example, chinese patent No. 201611143577.3 discloses a molybdenum draft tube and a single crystal furnace, wherein an inner container of the molybdenum draft tube is made of a molybdenum material. Although the molybdenum guide cylinder can reflect the temperature of the liquid surface and improve the pulling speed of the single crystal, the bottom surface of the molybdenum guide cylinder is close to the liquid surface of the silicon melt soup, so that partial molybdenum is sublimated and diffused and is combined with the monocrystalline silicon to form metal impurities, and the quality of the monocrystalline silicon is reduced.
For example, chinese utility model patent No. 201620615579.7 discloses a czochralski crystal growing furnace and a draft tube mechanism thereof, wherein an inner container of the draft tube is made of high purity graphite. Although the inner container structure of the guide cylinder made of high-purity graphite can improve the quality of monocrystalline silicon and reduce the content of metal impurities in the monocrystalline silicon, the pulling speed of the monocrystalline is slower, and the energy conservation and the consumption reduction are not facilitated.
Disclosure of Invention
In view of this, the utility model provides a draft tube to solve the single crystal pulling in-process that exists among the prior art, use the molybdenum draft tube to lead to the monocrystalline silicon quality to drop, use the graphite draft tube to lead to the technical problem that the single crystal pulling speed becomes slow.
The utility model also provides a single crystal furnace to can produce high-quality monocrystalline silicon under higher pulling speed.
The utility model provides a technical scheme that its technical problem adopted is:
the guide cylinder comprises a shell, an inner container and a heat insulation layer filled between the shell and the inner container, wherein the inner container comprises a molybdenum metal part and a high-purity graphite part, and the molybdenum metal part is arranged on the high-purity graphite part.
Preferably, the height of the high-purity graphite part is 1/5-2/5 of the height of the whole guide shell.
Preferably, the height of the high-purity graphite part is 1/4 of the height of the whole guide shell.
Preferably, the bottom of the molybdenum metal part overlaps with the upper part of the high purity graphite part.
Preferably, the bottom outer diameter of the molybdenum metal part is smaller than the upper inner diameter of the high-purity graphite part and larger than the middle inner diameter of the high-purity graphite part, and the bottom outer wall of the molybdenum metal part can be attached to the upper inner wall of the high-purity graphite part.
Preferably, the height of the overlapping part of the high-purity graphite part and the molybdenum metal part is 1/6-1/3 of the height of the high-purity graphite part.
A single crystal furnace comprises the guide shell.
According to the above technical scheme, the utility model provides a draft tube and single crystal growing furnace, its beneficial effect is: the inner container of the guide shell is divided into two parts, wherein the upper part is a molybdenum metal part made of molybdenum metal material, and the lower part is a high-purity graphite part made of high-purity graphite material. On one hand, the high-purity graphite part is close to the liquid level of the silicon melt soup, and the molybdenum metal part is far away from the liquid level of the silicon melt soup, so that the diffusion of the molybdenum metal is reduced, and the quality of the monocrystalline silicon is improved; on the other hand, the molybdenum metal part positioned on the upper part of the guide shell can reflect partial heat, increase the temperature gradient and improve the single crystal pulling speed. The guide cylinder can reduce the metal impurity content of the monocrystalline silicon, improve the quality of the monocrystalline silicon and prolong the service life of the monocrystalline silicon on the basis of ensuring the pulling speed of the monocrystalline silicon.
Drawings
Fig. 1 is a schematic structural view of a guide shell.
In the figure: the guide shell 10, the shell 100, the inner container 200, the heat insulating layer 300, the molybdenum metal part 210, the high-purity graphite part 220 and the overlapping part 230.
Detailed Description
The following combines the drawings of the utility model to further elaborate the technical scheme and technical effect of the utility model.
Referring to fig. 1, in an embodiment, a draft tube 10 includes a housing 100, an inner container 200, and a heat insulating layer 300 filled between the housing 100 and the inner container 200, wherein the inner container 200 includes a molybdenum metal portion 210 and a high purity graphite portion 220, and the molybdenum metal portion 210 is disposed on the high purity graphite portion 220.
The inner container 200 of the draft tube 10 is divided into two parts, the upper part is a molybdenum metal part 210 made of molybdenum metal material, and the lower part is a high purity graphite part 220 made of high purity graphite material. On one hand, the high-purity graphite part 220 is close to the liquid level of the silicon melt soup, and the molybdenum metal part 210 is far away from the liquid level of the silicon melt soup, so that the diffusion of the molybdenum metal is reduced, and the quality of the monocrystalline silicon is improved; on the other hand, the molybdenum metal part 210 positioned on the upper part of the guide shell 10 can reflect part of heat, increase the temperature gradient and improve the single crystal pulling speed. The guide cylinder 10 can reduce the metal impurity content of the monocrystalline silicon, improve the quality of the monocrystalline silicon and prolong the service life of the monocrystalline silicon on the basis of ensuring the pulling speed of the monocrystalline silicon.
Preferably, the height of the high-purity graphite part 220 is 1/5-2/5 of the height of the guide shell 10. Optimally, the height of the high-purity graphite part 220 is 1/4 of the height of the whole guide shell 10. The selection of the height of the high-purity graphite part 220 depends on the comprehensive consideration of the quality of the monocrystalline silicon and the pulling speed of the monocrystalline, and practice shows that when the height of the high-purity graphite part 220 is 1/4 of the height of the whole guide shell 10, the diffusion amount of molybdenum is the minimum, the content of molybdenum metal impurities in the monocrystalline silicon is the minimum, and the higher pulling speed of the monocrystalline can be kept at the moment, so that the energy conservation and the consumption reduction are facilitated.
In one embodiment, the bottom of the molybdenum metal part 210 overlaps the upper portion of the high purity graphite part 220. That is, the molybdenum metal part 210 and the high purity graphite part 220 form an overlapping part 230 at a contact part, and the molybdenum metal part 210 is closely attached to the high purity graphite part by its own weight.
For example, the bottom outer diameter of the molybdenum metal part 210 is smaller than the upper inner diameter of the high purity graphite part 220 and larger than the middle inner diameter of the high purity graphite part 220, and the bottom outer wall of the molybdenum metal part 210 can be attached to the upper inner wall of the high purity graphite part 220, so as to facilitate manufacturing and installation.
Furthermore, the height of the overlapping part of the high-purity graphite part 220 and the molybdenum metal part 210 is 1/6-1/3 of the height of the high-purity graphite part 220. That is, the height of the overlapping portion 230 is 1/6 to 1/3 of the height of the high purity graphite part 220, and is preferably 1/5 of the height of the high purity graphite part 220, so as to improve the connection stability of the molybdenum metal part 210 and the high purity graphite part.
A single crystal furnace comprises the guide cylinder 10, and when the single crystal furnace is used for producing monocrystalline silicon, the content of metal impurities in the monocrystalline silicon can be reduced, the quality of the monocrystalline silicon is improved, and the service life of the monocrystalline silicon is prolonged on the basis of ensuring the pulling speed of the monocrystalline silicon.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.
Claims (4)
1. A draft tube comprises a shell, an inner container and a heat insulation layer filled between the shell and the inner container, and is characterized in that the inner container comprises a molybdenum metal part and a high-purity graphite part, the molybdenum metal part is arranged on the high-purity graphite part, and the bottom of the molybdenum metal part is superposed with the upper part of the high-purity graphite part; the height of the high-purity graphite part is 1/5-2/5 of the height of the whole guide cylinder;
the bottom outer diameter of the molybdenum metal part is smaller than the upper inner diameter of the high-purity graphite part and larger than the middle inner diameter of the high-purity graphite part, and the bottom outer wall of the molybdenum metal part can be attached to the upper inner wall of the high-purity graphite part.
2. The draft tube of claim 1, wherein the height of the high purity graphite section is 1/4 the entire draft tube height.
3. The guide cylinder as claimed in claim 1, wherein the height of the overlapped part of the high-purity graphite part and the molybdenum metal part is 1/6-1/3 of the height of the high-purity graphite part.
4. A single crystal growing furnace comprising the draft tube according to any one of claims 1 to 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023166476.2U CN214193510U (en) | 2020-12-24 | 2020-12-24 | Draft tube and single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023166476.2U CN214193510U (en) | 2020-12-24 | 2020-12-24 | Draft tube and single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214193510U true CN214193510U (en) | 2021-09-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202023166476.2U Active CN214193510U (en) | 2020-12-24 | 2020-12-24 | Draft tube and single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214193510U (en) |
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2020
- 2020-12-24 CN CN202023166476.2U patent/CN214193510U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 25 Guangming West Road, Xixia District, Yinchuan City, Ningxia Hui Autonomous Region Patentee after: Ningxia Shenhe New Material Technology Co.,Ltd. Address before: 25 Guangming West Road, Xixia District, Yinchuan City, Ningxia Hui Autonomous Region Patentee before: NINGXIA YINHE SEMICONDUCTOR TECHNOLOGY CO.,LTD. Address after: 25 Guangming West Road, Xixia District, Yinchuan City, Ningxia Hui Autonomous Region Patentee after: NINGXIA YINHE SEMICONDUCTOR TECHNOLOGY CO.,LTD. Address before: 25 Guangming West Road, Xixia District, Yinchuan City, Ningxia Hui Autonomous Region Patentee before: NINGXIA YINHE NEW ENERGY TECHNOLOGY CO.,LTD. |
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| CP01 | Change in the name or title of a patent holder |