CN214097698U - Semiconductor laser tube performance detection device - Google Patents
Semiconductor laser tube performance detection device Download PDFInfo
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- CN214097698U CN214097698U CN202023060831.8U CN202023060831U CN214097698U CN 214097698 U CN214097698 U CN 214097698U CN 202023060831 U CN202023060831 U CN 202023060831U CN 214097698 U CN214097698 U CN 214097698U
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Abstract
The utility model belongs to the field of semiconductor lasers, in particular to a semiconductor laser tube performance detection device, which comprises an MCU module, wherein the MCU module is connected with a test module sequentially through a voltage conversion module and a test voltage module, and the MCU module is also connected with the test module respectively through a decoder module, a test current module and a multi-path selection module; the testing module comprises a plurality of modules to be tested which are connected in parallel, the modules to be tested comprise a P-type MOS tube and a semiconductor laser tube to be tested, the source electrode of the P-type MOS tube is connected with the anode of the semiconductor laser tube, the drain electrode of the P-type MOS tube receives testing voltage provided by the testing voltage module, and the cathode of the semiconductor laser tube receives testing current provided by the testing current module. This is novel to whole device control can carry out the performance to a plurality of laser diode simultaneously through MCU and detect, has reduced the data transmission route that needs when detecting more, has simplified circuit structure, can adjust test voltage and electric current, has guaranteed the low-power consumption operation of whole device.
Description
Technical Field
The utility model belongs to semiconductor laser pipe field, in particular to semiconductor laser pipe performance detection device.
Background
The semiconductor laser tube has the advantages of small volume, good monochromaticity, strong directivity, high light power utilization rate and the like, and is widely applied to the fields of optical fiber communication, instrument measurement and the like due to low working voltage requirement and simple working circuit. The structure of the semiconductor laser tube is similar to that of the traditional LED, two optical planes vertical to a PN node are added to the LED diode with the traditional PN junction structure to serve as a resonant cavity, and the PN junction is excited by current to emit light beyond a conduction threshold value so that laser is generated in the resonant cavity. Compared with the traditional helium-neon laser generator, under the drive of constant current, the threshold current of the semiconductor laser tube is increased along with the increase of the working temperature, the working current is reduced, and the output power is reduced. The semiconductor laser tube inevitably leads to the rise of the working temperature after long-time working, the stable working time of the semiconductor laser tube determines the performance of the semiconductor laser tube, and the rated time working state of the semiconductor laser tube needs to be detected to evaluate the quality and the reliability of the semiconductor laser tube.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a: aiming at the existing problems, the semiconductor laser tube performance detection device for detecting the long-time working state of the semiconductor laser tube is provided.
The utility model adopts the technical scheme as follows:
a semiconductor laser tube performance detection device comprises an MCU module, wherein the MCU module is connected with a test module sequentially through a voltage conversion module and a test voltage module, and is also connected with the test module respectively through a decoder module, a test current module and a multi-path selection module; the testing module comprises a plurality of modules to be tested which are connected in parallel, the modules to be tested comprise a P-type MOS tube and a semiconductor laser tube to be tested, the source electrode of the P-type MOS tube is connected with the anode of the semiconductor laser tube, the drain electrode of the P-type MOS tube receives the testing voltage provided by the testing voltage module, and the cathode of the semiconductor laser tube receives the testing current provided by the testing current module; a corresponding photosensitive diode is also arranged near each semiconductor laser tube, and each photosensitive diode outputs a detection signal through an independent detection circuit; the grid of the MOS tube in each module to be tested is respectively connected with the independent output pin of the decoder module, and the signal output end of the detection circuit is respectively connected with the input pin of the multi-path selection module. The MCU module outputs a voltage control signal to provide working voltage for the test module through the voltage conversion module and the test voltage module, and outputs a current control signal to provide working current for the test module through the test current module. The decoder module enables the output pin to be conducted with the corresponding MOS tube in the module to be tested through the test code according to the test signal provided by the MCU module, so that the semiconductor laser tube to be tested works, meanwhile, the test signal passes through the multi-path selection module, the signal generated by the photosensitive diode corresponding to the semiconductor laser tube to be tested through the detection circuit is transmitted to the ADC circuit in the MCU module from the multi-path selection module, and the detection information is converted into a digital signal to be recorded and processed in the MCU module. The detection information can be further processed by the MCU module through the upper computer.
Furthermore, the voltage conversion module comprises integrated operational amplifiers U3, U4 and U5, negative input ends of the integrated operational amplifiers U3 and U5 respectively receive control signals provided by a DAC circuit in the MCU module, positive input ends of the integrated operational amplifiers U3 and U5 are all grounded, and negative input ends of the integrated operational amplifiers U3 and U5 are all connected with output ends of the integrated operational amplifiers; the output end of the integrated operational amplifier U3 is connected with the negative input end of the integrated operational amplifier U4 through a resistor R9, and the output end of the integrated operational amplifier U5 is connected with the control end and the positive electrode of a variable resistor R11 through a resistor R12; the negative electrode of the variable resistor R11 is connected with the negative input end of the integrated operational amplifier U4; the input end of the integrated operational amplifier U4 is connected with the output end thereof through a resistor R10, and the output end thereof outputs a voltage control signal to the test voltage module. Because the working voltage in the MCU module is lower, when the laser diodes are detected in batches, the control signals are easily interfered by external signals, so that an adder is formed by integrating operational amplifiers, and the control signal voltage is superposed to conveniently control the test voltage module.
Further, the test voltage module comprises a PNP triode Q2, a collector of which is connected to an external voltage, an emitter of which is connected to an emitter of an NPN triode Q1 and then grounded, and a base of which is connected to a collector of a triode Q1 and then connected to an output terminal of the integrated operational amplifier U1 through a resistor R4; the negative input end of the integrated operational amplifier U1 is connected with the output end thereof, the positive input end thereof is connected with the output end thereof through a resistor R7, and the positive input end thereof is connected with the output end of the integrated operational amplifier U2; the positive input end of the integrated operational amplifier U2 is grounded through a resistor R8, the positive input end of the integrated operational amplifier U2 receives a voltage control signal of the voltage conversion module sequentially through a variable resistor R5 and a resistor R6, and the negative input end of the integrated operational amplifier U2 is connected with the base electrode of an NPN triode Q1 sequentially through a resistor R3 and a resistor R1; the base electrode of the triode Q1 is connected with the emitter electrode thereof through a resistor R2; the node between the resistors R3 and R1 provides the test voltage for the module under test. The components of the test voltage module form a switch power supply module, different test voltages can be obtained by adjusting the resistance value proportion between the variable resistor R5 and the resistors R6 and R8, and the requirements on the quantity and quality of the laser diodes to be tested in the module to be tested are met.
Furthermore, the test current module comprises an integrated operational amplifier U7, wherein the negative input end of the integrated operational amplifier U7 is connected with the control end of the variable resistor R19; the anode of the variable resistor R19 is connected with a current control signal of the MCU, and the cathode of the variable resistor R19 is connected with the output end of the integrated operational amplifier U7 through the capacitor C5; the output end of the integrated operational amplifier U7 is connected with the base electrode of a PNP triode Q10 through a resistor R17; the collector of the triode Q10 is grounded, the emitter of the triode Q10 is connected with the emitter of the NPN triode Q8, and the base of the triode Q8 is connected with the base of the triode Q8; the collector of the triode Q8 is connected with external voltage, and the emitter of the triode Q8 is connected with the grid of the N-type MOS transistor Q9 through a resistor R15; the source of the MOS transistor Q9 is connected to the gate thereof through a resistor R16 and a capacitor R15 in sequence, the drain thereof provides a test current, and a capacitor C4 is connected in parallel to the resistor R16. Through the high-power MOS tube, the output current is subjected to a current control signal of the MCU, and automatic adaptation of the load is carried out.
Further, the detection circuit comprises an NPN triode Q7, wherein an emitting electrode of the triode Q7 receives external voltage, a base electrode of the triode Q7 is connected with the negative electrode of the photosensitive diode, and a collector electrode of the triode Q7 is connected with the negative input end of the integrated operational amplifier U6; the negative input end of the integrated operational amplifier U6 is connected with the output end thereof through a resistor R14, and the output end thereof outputs a test signal; the resistor R14 is connected in parallel with a capacitor C1. The front signal amplification is carried out through the triode, and the internal impedance of the circuit is reduced through the integrated operational amplifier, so that the detection is not interfered by other external signals, and the detection precision is ensured.
To sum up, owing to adopted above-mentioned technical scheme, the beneficial effects of the utility model are that:
the MCU is used for controlling the whole device and simultaneously detecting the performance of a plurality of laser diodes, so that data transmission channels required by multiple detections are reduced, the circuit structure is simplified, and IO ports required by data transmission are reduced. Meanwhile, according to the difference of the number and the performance of the detection laser diodes, the test voltage and the test current can be adjusted, and the low-power-consumption operation of the whole device is ensured.
Drawings
FIG. 1 is a schematic diagram of the present invention;
fig. 2 is a schematic circuit diagram of the voltage conversion module of the present invention;
FIG. 3 is a schematic circuit diagram of the test voltage module of the present invention;
fig. 4 is a schematic circuit diagram of the test current module of the present invention;
FIG. 5 is a schematic diagram of a single photodiode and detection circuit in the test module of the present invention;
fig. 6 is a schematic circuit diagram of a part of the test module of the present invention.
Detailed Description
All features disclosed in this specification may be combined in any combination, except features and/or steps that are mutually exclusive.
As shown in the first and sixth figures, the semiconductor laser tube performance detection device comprises an MCU module, wherein the MCU module is connected with a test module sequentially through a voltage conversion module and a test voltage module, and is also connected with the test module respectively through a decoder module, a test current module and a multi-path selection module; the testing module comprises four modules to be tested which are connected in parallel, the modules to be tested comprise a P-type MOS tube and a semiconductor laser tube to be tested, the source electrode of the P-type MOS tube is connected with the anode of the semiconductor laser tube, the drain electrode of the P-type MOS tube receives the testing voltage provided by the testing voltage module, and the cathode of the semiconductor laser tube receives the testing current provided by the testing current module; a corresponding photosensitive diode is also arranged near each semiconductor laser tube, and each photosensitive diode outputs a detection signal through an independent detection circuit; the grid of the MOS tube in each module to be tested is respectively connected with the independent output pin of the decoder module, and the signal output end of the detection circuit is respectively connected with the input pin of the multi-path selection module. The MCU module outputs a voltage control signal to provide working voltage for the test module through the voltage conversion module and the test voltage module, and outputs a current control signal to provide working current for the test module through the test current module. The decoder module enables the output pin to be conducted with the corresponding MOS tube in the module to be tested through the test code according to the test signal provided by the MCU module, so that the semiconductor laser tube to be tested works, meanwhile, the test signal passes through the multi-path selection module, the signal generated by the photosensitive diode corresponding to the semiconductor laser tube to be tested through the detection circuit is transmitted to the ADC circuit in the MCU module from the multi-path selection module, and the detection information is converted into a digital signal to be recorded and processed in the MCU module. The detection information can be further processed by the MCU module through the upper computer.
As shown in fig. two, the voltage conversion module includes an integrated operational amplifier U3, U4, and U5, negative input terminals of the integrated operational amplifier U3 and U5 respectively receive control signals provided by the DAC circuit in the MCU module, positive input terminals thereof are both grounded, and negative input terminals thereof are both connected to output terminals thereof; the output end of the integrated operational amplifier U3 is connected with the negative input end of the integrated operational amplifier U4 through a resistor R9, and the output end of the integrated operational amplifier U5 is connected with the control end and the positive electrode of a variable resistor R11 through a resistor R12; the negative electrode of the variable resistor R11 is connected with the negative input end of the integrated operational amplifier U4; the input end of the integrated operational amplifier U4 is connected with the output end thereof through a resistor R10, and the output end thereof outputs a voltage control signal to the test voltage module.
As shown in fig. three, the test voltage module includes a PNP transistor Q2, a collector of which is connected to an external voltage, an emitter of which is connected to an emitter of an NPN transistor Q1 and then grounded, and a base of which is connected to a collector of a transistor Q1 and then connected to an output terminal of the integrated operational amplifier U1 through a resistor R4; the negative input end of the integrated operational amplifier U1 is connected with the output end thereof, the positive input end thereof is connected with the output end thereof through a resistor R7, and the positive input end thereof is connected with the output end of the integrated operational amplifier U2; the positive input end of the integrated operational amplifier U2 is grounded through a resistor R8, the positive input end of the integrated operational amplifier U2 receives a voltage control signal of the voltage conversion module sequentially through a variable resistor R5 and a resistor R6, and the negative input end of the integrated operational amplifier U2 is connected with the base electrode of an NPN triode Q1 sequentially through a resistor R3 and a resistor R1; the base electrode of the triode Q1 is connected with the emitter electrode thereof through a resistor R2; the node between the resistors R3 and R1 provides the test voltage for the module under test.
As shown in fig. four, the test current module includes an integrated operational amplifier U7, the negative input terminal of which is connected to the control terminal of the variable resistor R19; the anode of the variable resistor R19 is connected with a current control signal of the MCU, and the cathode of the variable resistor R19 is connected with the output end of the integrated operational amplifier U7 through the capacitor C5; the output end of the integrated operational amplifier U7 is connected with the base electrode of a PNP triode Q10 through a resistor R17; the collector of the triode Q10 is grounded, the emitter of the triode Q10 is connected with the emitter of the NPN triode Q8, and the base of the triode Q8 is connected with the base of the triode Q8; the collector of the triode Q8 is connected with external voltage, and the emitter of the triode Q8 is connected with the grid of the N-type MOS transistor Q9 through a resistor R15; the source of the MOS transistor Q9 is connected to the gate thereof through a resistor R16 and a capacitor R15 in sequence, the drain thereof provides a test current, and a capacitor C4 is connected in parallel to the resistor R16.
As shown in fig. five, one path of the detection circuit includes an NPN transistor Q7, an emitter of the transistor Q7 receives an external voltage, a base thereof is connected to a cathode of the photodiode, and a collector thereof is connected to a negative input terminal of the integrated operational amplifier U6; the negative input end of the integrated operational amplifier U6 is connected with the output end thereof through a resistor R14, and the output end thereof outputs a test signal; the resistor R14 is connected in parallel with a capacitor C1.
Claims (5)
1. The semiconductor laser tube performance detection device is characterized by comprising an MCU module, wherein the MCU module is connected with a test module sequentially through a voltage conversion module and a test voltage module, and is also connected with the test module respectively through a decoder module, a test current module and a multi-path selection module; the testing module comprises a plurality of modules to be tested which are connected in parallel, the modules to be tested comprise a P-type MOS tube and a semiconductor laser tube to be tested, the source electrode of the P-type MOS tube is connected with the anode of the semiconductor laser tube, the drain electrode of the P-type MOS tube receives testing voltage provided by the testing voltage module, and the cathode of the semiconductor laser tube receives testing current provided by the testing current module; a corresponding photosensitive diode is also arranged near each semiconductor laser tube, and each photosensitive diode outputs a detection signal through an independent detection circuit; the grid of the MOS tube in each module to be tested is respectively connected with the independent output pin of the decoder module, and the signal output end of the detection circuit is respectively connected with the input pin of the multi-path selection module.
2. The apparatus of claim 1, wherein the voltage conversion module comprises integrated operational amplifiers U3, U4 and U5, negative input terminals of the integrated operational amplifiers U3 and U5 respectively receive the control signals provided by the DAC circuits in the MCU module, positive input terminals thereof are both grounded, and negative input terminals thereof are both connected to the output terminals thereof; the output end of the integrated operational amplifier U3 is connected with the negative input end of the integrated operational amplifier U4 through a resistor R9, and the output end of the integrated operational amplifier U5 is connected with the control end and the positive electrode of a variable resistor R11 through a resistor R12; the negative electrode of the variable resistor R11 is connected with the negative input end of the integrated operational amplifier U4; the input end of the integrated operational amplifier U4 is connected with the output end thereof through a resistor R10, and the output end thereof outputs a voltage control signal to the test voltage module.
3. The apparatus of claim 1, wherein the test voltage module comprises a PNP transistor Q2, a collector of which is connected to an external voltage, an emitter of which is connected to an emitter of an NPN transistor Q1 and then grounded, and a base of which is connected to a collector of a transistor Q1 and then connected to the output terminal of the integrated operational amplifier U1 through a resistor R4; the negative input end of the integrated operational amplifier U1 is connected with the output end thereof, the positive input end thereof is connected with the output end thereof through a resistor R7, and the positive input end thereof is connected with the output end of the integrated operational amplifier U2; the positive input end of the integrated operational amplifier U2 is grounded through a resistor R8, the positive input end of the integrated operational amplifier U2 receives a voltage control signal of the voltage conversion module sequentially through a variable resistor R5 and a resistor R6, and the negative input end of the integrated operational amplifier U2 is connected with the base electrode of an NPN triode Q1 sequentially through a resistor R3 and a resistor R1; the base electrode of the triode Q1 is connected with the emitter electrode thereof through a resistor R2; the node between the resistors R3 and R1 provides the test voltage for the module under test.
4. The apparatus of claim 1, wherein the test current module comprises an integrated operational amplifier U7, the negative input terminal of which is connected to the control terminal of a variable resistor R19; the anode of the variable resistor R19 is connected with a current control signal of the MCU, and the cathode of the variable resistor R19 is connected with the output end of the integrated operational amplifier U7 through the capacitor C5; the output end of the integrated operational amplifier U7 is connected with the base electrode of a PNP triode Q10 through a resistor R17; the collector of the triode Q10 is grounded, the emitter of the triode Q10 is connected with the emitter of the NPN triode Q8, and the base of the triode Q8 is connected with the base of the triode Q8; the collector of the triode Q8 is connected with external voltage, and the emitter of the triode Q8 is connected with the grid of the N-type MOS transistor Q9 through a resistor R15; the source of the MOS transistor Q9 is connected to the gate thereof through a resistor R16 and a capacitor R15 in sequence, the drain thereof provides a test current, and a capacitor C4 is connected in parallel to the resistor R16.
5. The apparatus of claim 1, wherein the detection circuit comprises an NPN transistor Q7, the transistor Q7 having an emitter receiving the external voltage, a base connected to the negative terminal of the photodiode, and a collector connected to the negative input of the integrated operational amplifier U6; the negative input end of the integrated operational amplifier U6 is connected with the output end thereof through a resistor R14, and the output end thereof outputs a test signal; the resistor R14 is connected in parallel with a capacitor C1.
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| CN202023060831.8U CN214097698U (en) | 2020-12-18 | 2020-12-18 | Semiconductor laser tube performance detection device |
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| CN202023060831.8U CN214097698U (en) | 2020-12-18 | 2020-12-18 | Semiconductor laser tube performance detection device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114545189A (en) * | 2022-03-02 | 2022-05-27 | 上海陆芯电子科技有限公司 | Power device test system and method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114545189A (en) * | 2022-03-02 | 2022-05-27 | 上海陆芯电子科技有限公司 | Power device test system and method |
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