CN213752749U - Organic light-emitting diode, display panel and display device - Google Patents
Organic light-emitting diode, display panel and display device Download PDFInfo
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- CN213752749U CN213752749U CN202023255623.3U CN202023255623U CN213752749U CN 213752749 U CN213752749 U CN 213752749U CN 202023255623 U CN202023255623 U CN 202023255623U CN 213752749 U CN213752749 U CN 213752749U
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Abstract
The utility model provides an organic light emitting diode, display panel and display device, organic light emitting diode includes: a substrate; a transmissive electrode on the substrate; a semi-reflective injection layer positioned on the surface of one side of the transmission electrode, which faces away from the substrate; the reflecting electrode is positioned on one side of the semi-reflecting injection layer back to the substrate; and a light emitting layer between the semi-reflective injection layer and the reflective electrode. The thickness of the transmission electrode in the organic light-emitting diode is not limited by the microcavity structure, and the thickness of the transmission electrode can be relatively large, so that the transmission electrode on the substrate can obtain high surface flatness, the surface flatness of the semi-reflection injection layer is improved, the organic light-emitting diode is provided with the microcavity structure with uniform cavity length, light emitted by the light-emitting layer is narrow in spectral width when emitted from different positions of the transmission electrode, and the color purity and the efficiency of the organic light-emitting diode are improved.
Description
Technical Field
The utility model relates to a show technical field, concretely relates to organic light emitting diode, display panel and display device.
Background
With the continuous improvement of Organic Light Emitting Diode (OLED) display technology, the advantages of wide viewing angle, low cost, etc. become more and more obvious, and the OLED display is receiving the attention of more and more flat panel display manufacturers in the display field, so the OLED display becomes the focus of attention of the display industry at present. In order to meet the color coordinate CIE (x, y) and brightness requirements of products, the organic light emitting diode display generally utilizes a microcavity structure to adjust the light path, that is, a first electrode in the organic light emitting diode is set as a reflective electrode, and a second electrode in the organic light emitting diode is set as a semi-reflective electrode, so that light emitted from a light emitting layer located between the first electrode and the second electrode is continuously reflected between the first electrode and the second electrode, and thus light with a specific wavelength in light emitted from the second electrode is enhanced, the spectral width is narrowed, and finally, the color purity, the light emitting efficiency and the brightness of the organic light emitting diode are improved. In order to make the second electrode semi-reflective, the thickness of the second electrode is generally small. The second electrode is typically deposited on a substrate, the surface of which has a certain roughness.
However, since the thickness of the second electrode is small, the surface flatness of the second electrode is affected by the roughness of the substrate, so that the microcavity length in the organic light emitting diode is not uniform, and then the light emitted from the light emitting layer has a wide spectral width when emitted from different positions of the second electrode, resulting in a decrease in color purity.
SUMMERY OF THE UTILITY MODEL
Therefore, the to-be-solved technical problem of the present invention is to overcome the defect that the thickness of the semi-reflective electrode in the conventional microcavity structure is smaller and the color purity of the organic light emitting diode is reduced, thereby providing an organic light emitting diode, a display panel and a display device.
The utility model provides an organic light emitting diode, include:
a substrate;
a transmissive electrode on the substrate;
a semi-reflective injection layer positioned on the surface of one side, back to the substrate, of the transmission electrode;
the reflecting electrode is positioned on one side, back to the substrate, of the semi-reflecting injection layer;
a light emitting layer between the semi-reflective injection layer and the reflective electrode.
Optionally, the semi-reflective injection layer includes a first semi-reflective injection layer and a second semi-reflective injection layer, the first semi-reflective injection layer is located between the second semi-reflective injection layer and the transmissive electrode, and a difference between a work function or a LUMO energy level of the second semi-reflective injection layer and a work function of the first semi-reflective injection layer is less than 1 eV.
Optionally, the first semi-reflective injection layer is a magnesium-silver alloy semi-reflective injection layer, a silver semi-reflective injection layer or an aluminum semi-reflective injection layer, and the thickness of the first semi-reflective injection layer is 5nm to 20 nm; the second semi-reflective injection layer is a molybdenum trioxide semi-reflective injection layer and a zinc oxide semi-reflective injection layer, or the second semi-reflective injection layer is a 2, 3, 6, 7, 10, 11-hexacyano-1, 4, 5, 8, 9, 12-hexaazatriphenylene semi-reflective injection layer, and the thickness of the second semi-reflective injection layer is 1 nm-10 nm.
Optionally, the semi-reflective injection layer is of a single-layer structure, the semi-reflective injection layer is a magnesium-silver alloy semi-reflective injection layer, a silver semi-reflective injection layer or an aluminum semi-reflective injection layer, and the thickness of the semi-reflective injection layer is 5nm to 20 nm.
Optionally, the organic light emitting diode further includes: a charge generation layer between the semi-reflective injection layer and the light emitting layer; the charge generation layer includes a p-type charge generation layer and an n-type charge generation layer which are stacked.
Optionally, the transmissive electrode is a cathode layer, the reflective electrode is an anode layer, and the n-type charge generation layer is located between the p-type charge generation layer and the light emitting layer; or, the transmission electrode is an anode layer, the reflection electrode is a cathode layer, and the p-type charge generation layer is positioned between the n-type charge generation layer and the light emitting layer.
Optionally, the p-type charge generation layer has a thickness of
The thickness of the n-type charge generation layer is
Optionally, the reflective electrode is a magnesium-silver alloy reflective electrode, an aluminum reflective electrode or a silver reflective electrode, and the thickness of the reflective electrode is 50nm to 500 nm.
The utility model also provides a display panel, including above-mentioned organic light emitting diode.
The utility model also provides a display device, including above-mentioned display panel.
The utility model discloses technical scheme has following advantage:
1. the utility model provides an organic light emitting diode, the semi-reflection injection layer can inject the current carrier from the transmission electrode into the luminescent layer, meanwhile, the semi-reflection injection layer has semi-reflection capability to light, so that the reflection electrode and the semi-reflection injection layer form a micro-cavity structure for adjusting a light path, the transmission electrode is only used for applying voltage and does not form a micro-cavity structure, so the thickness of the transmission electrode is not limited by the micro-cavity structure, and the thickness of the transmission electrode can be relatively larger, so that the transmission electrode on the substrate obtains higher surface flatness, and further, the surface flatness of the semi-reflection injection layer is improved, the organic light-emitting diode has a micro-cavity structure with uniform cavity length, and then light emitted by the light-emitting layer has narrower spectral width when being emitted from different positions of the transmission electrode, so that the color purity and the efficiency of the organic light-emitting diode are improved.
2. The utility model provides an organic light emitting diode, half reflection injection layer includes first half reflection injection layer and second half reflection injection layer, first half reflection injection layer is located between second half reflection injection layer and the transmitting electrode, through work function or LUMO energy level that makes second half reflection injection layer with the difference of the work function of first half reflection injection layer is less than 1eV, has reduced other organic functional layers that are located between luminescent layer and the half reflection injection layer with the contact barrier on half reflection injection layer to improve the injection efficiency of current carrier, be favorable to improving the luminous efficacy of device.
3. The utility model provides an organic light emitting diode, also include the electric charge that is located between said semi-reflection injection layer and said luminescent layer produces the layer; the charge generation layer includes a p-type charge generation layer and an n-type charge generation layer which are stacked. The p-type charge generation layer and the n-type charge generation layer form an organic semiconductor heterojunction, and the high-efficiency charge generation effect of the organic semiconductor heterojunction is utilized, so that the injection efficiency of the charge generation layer to carriers is improved, and the display effect of the device is favorably improved.
4. The utility model provides a display panel, include the utility model provides an organic light emitting diode. The semi-reflective injection layer in the organic light emitting diode can inject carriers from the transmissive electrode into the light emitting layer, meanwhile, the semi-reflection injection layer has semi-reflection capability to light, so that the reflection electrode and the semi-reflection injection layer form a micro-cavity structure for adjusting a light path, the transmission electrode is only used for applying voltage and does not form a micro-cavity structure, so the thickness of the transmission electrode is not limited by the micro-cavity structure, and the thickness of the transmission electrode can be relatively larger, so that the transmission electrode on the substrate obtains higher surface flatness, and further, the surface flatness of the semi-reflection injection layer is improved, the organic light-emitting diode has a micro-cavity structure with uniform cavity length, and then light emitted by the light-emitting layer has narrower spectral width when being emitted from different positions of the transmission electrode, so that the color purity and the efficiency of the organic light-emitting diode are improved.
5. The utility model provides a display device, including display panel, display panel includes the utility model provides an organic light emitting diode. The semi-reflective injection layer in the organic light emitting diode can inject carriers from the transmissive electrode into the light emitting layer, meanwhile, the semi-reflection injection layer has semi-reflection capability to light, so that the reflection electrode and the semi-reflection injection layer form a micro-cavity structure for adjusting a light path, the transmission electrode is only used for applying voltage and does not form a micro-cavity structure, so the thickness of the transmission electrode is not limited by the micro-cavity structure, and the thickness of the transmission electrode can be relatively larger, so that the transmission electrode on the substrate obtains higher surface flatness, and further, the surface flatness of the semi-reflection injection layer is improved, the organic light-emitting diode has a micro-cavity structure with uniform cavity length, and then light emitted by the light-emitting layer has narrower spectral width when being emitted from different positions of the transmission electrode, so that the color purity and the efficiency of the organic light-emitting diode are improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the technical solutions in the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an organic light emitting diode;
fig. 2 is a schematic structural diagram of a first organic light emitting diode according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a second organic light emitting diode according to another embodiment of the present invention.
Detailed Description
Referring to fig. 1, an organic light emitting diode includes a substrate a disposed in a stack; the organic electroluminescent device comprises a semi-reflective electrode b, an electron injection layer c, an electron transport layer d, a hole blocking layer e, a light emitting layer f, an electron blocking layer g, a hole transport layer h, a hole injection layer i and a reflective electrode j which are sequentially stacked on the substrate from bottom to top.
In the organic light emitting diode, the semi-reflective electrode b and the reflective electrode j form a microcavity structure, and light in the microcavity structure is finally emitted from the semi-reflective electrode b. In order to make the semi-reflective electrode b have semi-reflective capability, the thickness of the semi-reflective electrode b is generally small. The semi-reflective electrode b is deposited on the substrate, the surface of the substrate has certain roughness, and the thickness of the semi-reflective electrode b is smaller, so that the surface flatness of the semi-reflective electrode b is influenced by the roughness of the substrate; secondly, since the thickness of the semi-reflective electrode b is small, the thickness uniformity of the semi-reflective electrode b itself is poor. This results in non-uniform cavity length of the microcavity structure in the organic light emitting diode, which in turn results in a wider spectral width of light emitted from the light emitting layer when emitted from different positions of the semi-reflective electrode b, resulting in a decrease in color purity.
On the basis, the utility model provides an organic light-emitting diode, which comprises a substrate; a transmissive electrode on the substrate; a semi-reflective injection layer positioned on the surface of one side of the transmission electrode, which faces away from the substrate; the reflecting electrode is positioned on one side of the semi-reflecting injection layer back to the substrate; and a light emitting layer between the semi-reflective injection layer and the reflective electrode. The thickness of the transmission electrode in the organic light-emitting diode is not limited by the microcavity structure, and the thickness of the transmission electrode can be relatively large, so that the transmission electrode on the substrate obtains high surface flatness, the surface flatness of the semi-reflection injection layer is improved, the organic light-emitting diode has the microcavity structure with uniform cavity length, light emitted by the light-emitting layer has narrow spectral width when being emitted from different positions of the transmission electrode, and the color purity and the efficiency of the organic light-emitting diode are improved.
The technical solution of the present invention will be described clearly and completely with reference to the accompanying drawings, and obviously, the described embodiments are some, but not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Example 1
As shown in fig. 2, the present embodiment provides an organic light emitting diode including a substrate 12; a transmissive electrode 11 on a substrate 12; a semi-reflective injection layer 10 located on the surface of the transmission electrode 11 opposite to the substrate 12; a reflecting electrode 1 positioned on one side of the semi-reflecting injection layer 10, which faces away from the substrate 12; and a light emitting layer 5 between the semi-reflective injection layer 10 and the reflective electrode 1. In the organic light emitting diode, the semi-reflective injection layer 10 is provided on the surface of the transmissive electrode 11 facing the reflective electrode 1, so that the semi-reflective injection layer 10 can inject carriers from the transmissive electrode 11 into the light emitting layer. The semi-reflective injection layer 10 has a semi-reflective capability to light, so that the reflective electrode 1 and the semi-reflective injection layer 10 form a microcavity structure for adjusting a light path, and the transmissive electrode 11 is only used for applying a voltage and does not form the microcavity structure, so that the thickness of the transmissive electrode 11 is not limited by the microcavity structure, and the thickness of the transmissive electrode 11 can be relatively large, so that the surface flatness of the transmissive electrode 11 can not be affected by the roughness of the substrate 12, so that the transmissive electrode 11 obtains high surface flatness, and the organic light emitting diode has a uniform microcavity structure, and thus, light with the same wavelength emitted by the light emitting layer 5 has the same wavelength when emitted from different positions of the second electrode through different reflective paths, and the color purity and the efficiency of the organic light emitting diode are improved.
Further, the substrate 12 may be glass or flexible plastic; the reflective electrode 1 comprises but is not limited to a magnesium-silver alloy reflective electrode, an aluminum reflective electrode or a silver reflective electrode, and the thickness of the reflective electrode 1 is 50 nm-500 nm; the material of the transmissive electrode 11 is a transparent conductive oxide thin film, and the material of the transmissive electrode 11 includes, but is not limited to, Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO).
Referring to fig. 2, the semi-reflective injection layer 10 includes a first semi-reflective injection layer 102 and a second semi-reflective injection layer 101, the first semi-reflective injection layer 102 is located between the second semi-reflective injection layer 101 and the transmissive electrode 11, and a difference between a work function or LUMO level of the second semi-reflective injection layer 101 and a work function of the first semi-reflective injection layer 102 is less than 1 eV. By limiting the difference between the work function or LUMO energy level of the second semi-reflective injection layer 101 and the work function of the first semi-reflective injection layer 102 to be less than 1eV, the contact barrier between other organic functional layers positioned between the light-emitting layer and the semi-reflective injection layer is reduced, so that the injection efficiency of carriers is improved, and the luminous efficiency of the device is improved.
Specifically, the first semi-reflective injection layer 102 is a magnesium-silver alloy semi-reflective injection layer, a silver semi-reflective injection layer or an aluminum semi-reflective injection layer, and the thickness of the first semi-reflective injection layer 102 is 5nm to 20 nm. The material of the first semi-reflective injection layer 102 is defined to be matched with the work function of the transmission electrode 11, so that carriers from the transmission electrode 11 can be injected into the first semi-reflective injection layer 102; by defining the thickness of the first semi-reflective implant layer 102, the semi-reflective capability of the first semi-reflective implant layer 102 is ensured. The second semi-reflective injection layer 101 is a molybdenum trioxide semi-reflective injection layer, a zinc oxide semi-reflective injection layer or a 2, 3, 6, 7, 10, 11-hexacyano-1, 4, 5, 8, 9, 12-hexaazatriphenylene semi-reflective injection layer, and the thickness of the second semi-reflective injection layer 101 is 1 nm-10 nm. By limiting the thickness of the second semi-reflective injection layer 101, the transmittance of the second semi-reflective injection layer 101 is ensured, so that light can transmit through the second semi-reflective injection layer 101 and be semi-reflected at the first semi-reflective injection layer 102. It is to be understood that the first semi-reflective injection layer includes, but is not limited to, a magnesium silver alloy semi-reflective injection layer, a silver semi-reflective injection layer, or an aluminum semi-reflective injection layer, and the second semi-reflective injection layer includes, but is not limited to, a molybdenum trioxide semi-reflective injection layer, a zinc oxide semi-reflective injection layer, or a 2, 3, 6, 7, 10, 11-hexacyano-1, 4, 5, 8, 9, 12-hexaazatriphenylene semi-reflective injection layer.
Referring to fig. 2, in the present embodiment, the organic light emitting diode further includes: a charge generation layer 9 between the semi-reflective injection layer 10 and the light emitting layer 5; the charge generation layer 9 includes a p-type charge generation layer 92 and an n-type charge generation layer 91 which are stacked. The p-type charge generation layer 92 and the n-type charge generation layer 91 form an organic semiconductor heterojunction, and the high-efficiency charge generation effect of the organic semiconductor heterojunction is utilized, so that the injection efficiency of the charge generation layer to carriers is improved, and the display effect of the device is improved. Meanwhile, because the electrons and holes generated at the organic semiconductor heterojunction interface are determined by the built-in electric field of the organic semiconductor heterojunction, the electron injection efficiency is irrelevant to the work function of the semi-reflective injection layer 10, so that the selectivity of the materials of the charge generation layer 9 and the semi-reflective injection layer 10 is increased, and the structural design of the device is facilitated.
Further, the p-type charge generation layer 92 has a thickness of
The P-type charge generation layer 92 is made of a hole transport material doped with a P-type substance, and the doping concentration of the P-type substance is 0.5-10%; the n-type charge generation layer 91 has a thickness of
The n-type charge generation layer 91 is made of an electron transport material doped with active metal, and the doping concentration of the active metal is 0.5-10%. The active metal can be at least one of lithium, sodium, potassium, rubidium, cesium and ytterbium.
In this embodiment, the organic light emitting diode further includes: a first carrier function layer located between the charge generation layer 9 and the light emitting layer 5; a second carrier function layer located between the light emitting layer 5 and the reflective electrode 1.
Referring to fig. 2, the transmissive electrode 11 is a cathode layer, the reflective electrode 1 is an anode layer, the n-type charge generation layer 91 is located between the p-type charge generation layer 92 and the light emitting layer 5, the first carrier function layer includes at least one of an electron transport layer and a hole blocking layer, and the second carrier function layer includes at least one of a hole injection layer, a hole transport layer and an electron blocking layer, that is, the organic light emitting diode is an inverted bottom emission device.
In this embodiment, the organic light emitting diode is an inverted bottom emission device, the first carrier function layer includes at least one of an electron transport layer 7 and a hole blocking layer 6, the n-type charge generation layer 91 and the first carrier function layer in the charge generation layer 9 are located between the light emitting layer and the substrate 12, the n-type charge generation layer 91 and the first carrier function layer are located at a position of the display panel opposite to the bottom layer, so that the n-type charge generation layer 91 and the first carrier function layer can better resist the erosion of water and oxygen from above the display panel, and the P-type charge generation layer 92 is located between the n-type charge generation layer 91 and the substrate 12, the P-type charge generation layer 92 is made of a hole transport material doped with a P-type substance, and is more sensitive to water and oxygen than the n-type charge generation layer 91 and the first carrier function layer, so that the n-type charge generation layer 91 and the first carrier function layer can better resist water and oxygen from below the display panel Erosion of (2). Thus having good device stability.
In one embodiment, as shown in fig. 2, the organic light emitting diode includes a substrate 12, a transmissive electrode 11, a semi-reflective injection layer 10, a p-type charge generation layer 92, an n-type charge generation layer 91, an electron transport layer 7, a hole blocking layer 6, a light emitting layer 5, an electron blocking layer 4, a hole transport layer 3, a hole injection layer 2, and a reflective electrode 1, which are sequentially stacked from bottom to top.
In one embodiment, the optical cavity length from the surface of the reflective electrode 1 facing the light-emitting layer 5 to the surface of the semi-reflective injection layer 10 facing the light-emitting layer 5 is λ, and the cavity length of the microwave structure is the same as the wavelength of the light emitted from the light-emitting layer 5, so that the spectrum of the light output from the semi-reflective injection layer 10 is narrowed, thereby improving color purity, enhancing light-emitting efficiency and brightness, and further obtaining an organic light-emitting diode with high contrast and low power consumption.
In a specific embodiment, the optical cavity length from the light-emitting layer 5 to the surface of the reflective electrode 1 facing the light-emitting layer 5 is 1/4 λ, and the optical cavity length from the light-emitting layer 5 to the surface of the semi-reflective injection layer 10 facing the light-emitting layer 5 is 3/4 λ, so that the organic light-emitting diode has an optimized microcavity structure, and is more excellent in color purity, light-emitting efficiency and brightness.
Example 2
This example differs from example 1 in that: the semi-reflection injection layer is of a single-layer structure, the semi-reflection injection layer is a magnesium-silver alloy semi-reflection injection layer, a silver semi-reflection injection layer or an aluminum semi-reflection injection layer, and the thickness of the semi-reflection injection layer is 5 nm-20 nm.
The same portions of this embodiment as those of embodiment 1 are not described in detail.
Example 3
As shown in fig. 3, the present embodiment provides an organic light emitting diode including a substrate 12'; a transmissive electrode 11 'on the substrate 12'; a semi-reflective injection layer 10 ' on a surface of the transmission electrode 11 ' facing away from the substrate 12 '; a reflective electrode 1 ' located on a side of the semi-reflective injection layer 10 ' facing away from the substrate 12 '; a light emitting layer 5 ' between the semi-reflective injection layer 10 ' and the reflective electrode 1 '. In the organic light emitting diode, the semi-reflective injection layer 10 ' is provided on the surface of the transmissive electrode 11 ' facing the reflective electrode 1 ', and the semi-reflective injection layer 10 ' can inject carriers from the transmissive electrode 11 ' into the light emitting layer. The semi-reflection injection layer 10 'has semi-reflection capability to light, so that the reflection electrode 1' and the semi-reflection injection layer 10 'form a microcavity structure for adjusting a light path, and the transmission electrode 11' is only used for applying voltage and does not form the microcavity structure, so that the thickness of the transmission electrode 11 'is not limited by the microcavity structure, the thickness of the transmission electrode 11' can be relatively large, the surface flatness of the transmission electrode 11 'can not be influenced by the roughness of the substrate 12', the transmission electrode 11 'obtains high surface flatness, the organic light-emitting diode has a uniform microcavity structure, and then the light with the same wavelength emitted by the light-emitting layer 5' has the same wavelength when emitted from different positions of the second electrode through different reflection paths, and the color purity of the organic light-emitting diode is improved.
Further, the substrate 12' may be glass or flexible plastic; the reflective electrode 1 'comprises but is not limited to a magnesium-silver alloy reflective electrode, an aluminum reflective electrode or a silver reflective electrode, and the thickness of the reflective electrode 1' is 50 nm-500 nm; the material of the transmissive electrode 11 'is a transparent conductive oxide thin film, and the material of the transmissive electrode 11' includes, but is not limited to, Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO).
Referring to fig. 3, the semi-reflective injection layer 10 'includes a first semi-reflective injection layer 102' and a second semi-reflective injection layer 101 ', the first semi-reflective injection layer 102' being located between the second semi-reflective injection layer 101 'and the transmissive electrode 11', a difference in a work function or LUMO energy level of the second semi-reflective injection layer 101 'and a work function of the first semi-reflective injection layer 102' being less than 1 eV. By limiting the difference between the work function or LUMO energy level of the second semi-reflective injection layer 101 'and the work function of the first semi-reflective injection layer 102' to be less than 1eV, the contact barrier between other organic functional layers between the light-emitting layer and the semi-reflective injection layer is reduced, thereby improving the injection efficiency of carriers and being beneficial to improving the light-emitting efficiency of the device.
Specifically, the first semi-reflective injection layer 102 'is a magnesium silver alloy semi-reflective injection layer, a silver semi-reflective injection layer or an aluminum semi-reflective injection layer, and the thickness of the first semi-reflective injection layer 102' is 5nm to 20 nm. The material of the first semi-reflective injection layer 102 'is defined to be matched with the work function of the transmissive electrode 11', so that carriers from the transmissive electrode 11 'can be injected into the first semi-reflective injection layer 102'; by defining the thickness of the first semi-reflective implant layer 102 ', the semi-reflective capability of the first semi-reflective implant layer 102' is ensured. The second semi-reflective injection layer 101 'is a molybdenum trioxide semi-reflective injection layer, a zinc oxide semi-reflective injection layer or a 2, 3, 6, 7, 10, 11-hexacyano-1, 4, 5, 8, 9, 12-hexaazatriphenylene semi-reflective injection layer, and the thickness of the second semi-reflective injection layer 101' is 1 nm-10 nm. By defining the thickness of the second semi-reflective injection layer 101 ', the transmittance of the second semi-reflective injection layer 101' is ensured, so that light can transmit through the second semi-reflective injection layer 101 'and be semi-reflected at the first semi-reflective injection layer 102'. It is to be understood that the first semi-reflective injection layer includes, but is not limited to, a magnesium silver alloy semi-reflective injection layer, a silver semi-reflective injection layer, or an aluminum semi-reflective injection layer, and the second semi-reflective injection layer includes, but is not limited to, a molybdenum trioxide semi-reflective injection layer, a zinc oxide semi-reflective injection layer, or a 2, 3, 6, 7, 10, 11-hexacyano-1, 4, 5, 8, 9, 12-hexaazatriphenylene semi-reflective injection layer.
Referring to fig. 2, in the present embodiment, the organic light emitting diode further includes: a charge generation layer 9 ' between the semi-reflective injection layer 10 ' and the light emitting layer 5 '; the charge generation layer 9 ' includes a p-type charge generation layer 92 ' and an n-type charge generation layer 91 ' which are stacked. The p-type charge generation layer 92 ' and the n-type charge generation layer 91 ' form an organic semiconductor heterojunction, and the efficient charge generation effect of the organic semiconductor heterojunction is utilized, so that the injection efficiency of the charge generation layer 9 ' to carriers is improved, and the display effect of the device is improved. Meanwhile, because the electrons and holes generated at the organic semiconductor heterojunction interface are determined by the built-in electric field of the organic semiconductor heterojunction, the electron injection efficiency is irrelevant to the work function of the semi-reflective injection layer 10 ', so that the selectivity of the materials of the charge generation layer 9 ' and the semi-reflective injection layer 10 ' is increased, and the structural design of the device is facilitated.
Further, the p-type charge generation layer 92' has a thickness of
The P-type charge generation layer 92' is made of a hole transport material doped with a P-type substance, and the doping concentration of the P-type substance is 0.5-10%; the n-type charge generation layer 91' has a thickness of
The n-type charge generation layer 91' is made of an electron transport material doped with active metal, and the doping concentration of the active metal is 0.5-10%. The active metal can be at least one of lithium, sodium, potassium, rubidium, cesium and ytterbium.
In this embodiment, the organic light emitting diode further includes: a first carrier function layer located between the charge generation layer 9 'and the light emitting layer 5'; a second carrier function layer located between the light emitting layer 5 'and the reflective electrode 1'.
Referring to fig. 3, the transmissive electrode 11 ' is an anode layer, the reflective electrode 1 ' is a cathode layer, the p-type charge generation layer 92 ' is located between the n-type charge generation layer 91 ' and the light emitting layer 5 ', the first carrier functional layer includes at least one of a hole transport layer and an electron blocking layer, and the second carrier functional layer includes at least one of an electron injection layer, an electron transport layer and a hole blocking layer.
In one embodiment, as shown in fig. 3, the organic light emitting diode includes a substrate 12 ', a transmissive electrode 11', a semi-reflective injection layer 10 ', an n-type charge generation layer 91', a p-type charge generation layer 92 ', a hole transport layer 3', an electron blocking layer 4 ', a light emitting layer 5', a hole blocking layer 6 ', an electron transport layer 7', an electron injection layer 8 'and a reflective electrode 1' which are sequentially stacked from bottom to top.
In one embodiment, the optical cavity length from the surface of the reflective electrode 1 'facing the light emitting layer 5' to the surface of the semi-reflective injection layer 10 'facing the light emitting layer 5' is λ, and the cavity length of the microwave structure is the same as the wavelength of the light emitted from the light emitting layer 5 ', so that the spectrum of the light output from the semi-reflective injection layer 10' is narrowed, thereby improving color purity, enhancing light emitting efficiency and brightness, and further obtaining an organic light emitting diode with high contrast and low power consumption.
In a specific embodiment, the optical cavity length from the light-emitting layer 5 'to the surface of the reflective electrode 1' facing the light-emitting layer 5 'is 1/4 λ, and the optical cavity length from the light-emitting layer 5' to the surface of the semi-reflective injection layer 10 'facing the light-emitting layer 5' is 3/4 λ, so that the organic light-emitting diode has an optimized microcavity structure and is more excellent in color purity, light-emitting efficiency and brightness.
Example 4
This example differs from example 3 in that: the semi-reflection injection layer is of a single-layer structure, the semi-reflection injection layer is a magnesium-silver alloy semi-reflection injection layer, a silver semi-reflection injection layer or an aluminum semi-reflection injection layer, and the thickness of the semi-reflection injection layer is 5 nm-20 nm.
The same portions of this embodiment as those of embodiment 3 are not described in detail.
Example 5
This embodiment provides a display panel including any one of the organic light emitting diodes provided in embodiments 1 to 4. The semi-reflective injection layer in the organic light emitting diode can inject carriers from the transmissive electrode into the light emitting layer, meanwhile, the semi-reflection injection layer has semi-reflection capability to light, so that the reflection electrode and the semi-reflection injection layer form a micro-cavity structure for adjusting a light path, the transmission electrode is only used for applying voltage and does not form a micro-cavity structure, so the thickness of the transmission electrode is not limited by the micro-cavity structure, and the thickness of the transmission electrode can be relatively larger, so that the transmission electrode on the substrate obtains higher surface flatness, and further, the surface flatness of the semi-reflection injection layer is improved, the organic light-emitting diode has a micro-cavity structure with uniform cavity length, and then light emitted by the light-emitting layer has narrower spectral width when being emitted from different positions of the transmission electrode, so that the color purity and the efficiency of the organic light-emitting diode are improved.
Example 6
The present embodiment provides a display device including the display panel provided in embodiment 5. The display device may be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, and a navigator, which is not limited in this embodiment.
In the organic light emitting diode provided in embodiment 1 of the display panel of the display device, the semi-reflective injection layer in the organic light emitting diode can inject carriers from the transmissive electrode into the light emitting layer, and the semi-reflective injection layer has a semi-reflective capability to light, so that the reflective electrode and the semi-reflective injection layer form a microcavity structure for adjusting a light path, and the transmissive electrode is only used for applying a voltage and does not form the microcavity structure, so that the thickness of the transmissive electrode is not limited by the microcavity structure, and the thickness of the transmissive electrode can be relatively large, so that the transmissive electrode on the substrate has high surface flatness, and further the surface flatness of the semi-reflective injection layer is improved, so that the organic light emitting diode has a microcavity structure with a uniform cavity length, and further, the light emitted from the light emitting layer has a narrow spectral width when emitted from different positions of the transmissive electrode, thereby improving the color purity and efficiency of the organic light emitting diode.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications can be made without departing from the scope of the invention.
Claims (10)
1. An organic light emitting diode, comprising:
a substrate;
a transmissive electrode on the substrate;
a semi-reflective injection layer positioned on the surface of one side, back to the substrate, of the transmission electrode;
the reflecting electrode is positioned on one side, back to the substrate, of the semi-reflecting injection layer;
a light emitting layer between the semi-reflective injection layer and the reflective electrode.
2. The organic light-emitting diode of claim 1, wherein the semi-reflective injection layer comprises a first semi-reflective injection layer and a second semi-reflective injection layer, wherein the first semi-reflective injection layer is between the second semi-reflective injection layer and the transmissive electrode, and wherein the difference between the work function or LUMO energy level of the second semi-reflective injection layer and the work function of the first semi-reflective injection layer is less than 1 eV.
3. The organic light-emitting diode of claim 2, wherein the first semi-reflective injection layer is a magnesium-silver alloy semi-reflective injection layer, a silver semi-reflective injection layer or an aluminum semi-reflective injection layer, and the thickness of the first semi-reflective injection layer is 5nm to 20 nm;
the second semi-reflective injection layer is a molybdenum trioxide semi-reflective injection layer, a zinc oxide semi-reflective injection layer or a 2, 3, 6, 7, 10, 11-hexacyano-1, 4, 5, 8, 9, 12-hexaazatriphenylene semi-reflective injection layer, and the thickness of the second semi-reflective injection layer is 1 nm-10 nm.
4. The OLED of claim 1, wherein the semi-reflective injection layer is a single-layer structure, the semi-reflective injection layer is a Mg-Ag alloy semi-reflective injection layer, a Ag semi-reflective injection layer or an Al semi-reflective injection layer, and the thickness of the semi-reflective injection layer is 5 nm-20 nm.
5. The organic light-emitting diode of claim 1, further comprising: a charge generation layer between the semi-reflective injection layer and the light emitting layer; the charge generation layer includes a p-type charge generation layer and an n-type charge generation layer which are stacked.
6. The OLED of claim 5, wherein the transmissive electrode is a cathode layer, the reflective electrode is an anode layer, and the n-type charge generation layer is located between the p-type charge generation layer and the light emitting layer;
or, the transmission electrode is an anode layer, the reflection electrode is a cathode layer, and the p-type charge generation layer is positioned between the n-type charge generation layer and the light emitting layer.
7. The OLED of claim 5, wherein the p-type charge generation layer has a thickness of
The thickness of the n-type charge generation layer is
8. The organic light-emitting diode of claim 1, wherein the reflective electrode is a magnesium silver alloy reflective electrode, an aluminum reflective electrode or a silver reflective electrode, and the reflective electrode has a thickness of 50nm to 500 nm.
9. A display panel comprising the organic light emitting diode according to any one of claims 1 to 8.
10. A display device characterized by comprising the display panel according to claim 9.
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