CN213071068U - Semiconductor structure for growing gallium nitride by graphene mask method - Google Patents
Semiconductor structure for growing gallium nitride by graphene mask method Download PDFInfo
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- CN213071068U CN213071068U CN202021109584.3U CN202021109584U CN213071068U CN 213071068 U CN213071068 U CN 213071068U CN 202021109584 U CN202021109584 U CN 202021109584U CN 213071068 U CN213071068 U CN 213071068U
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Abstract
The utility model belongs to the semiconductor field discloses a semiconductor structure of graphite alkene mask method growth gallium nitride, including gallium nitride layer, graphite alkene mask layer, substrate layer, through the direct growth graphite alkene mask layer of plasma reinforcing chemical vapor deposition method on the substrate layer, graphite alkene mask layer has formed grating form stripe through the sculpture, through metal organic matter chemical vapor deposition growth gallium nitride layer on the graphite alkene mask layer. Has the advantages that: the graphene mask layer structure can effectively reduce gallium nitride dislocation and improve the growth quality of the gallium nitride dislocation; the graphene is a two-dimensional material, so that the low-angle grain boundary defect caused by the mask layer can be reduced; meanwhile, the characteristic of good heat dissipation of graphene is also utilized, so that the heat dissipation performance of the gallium nitride device is greatly improved; the graphene mask layer and the gallium nitride layer are combined by weak van der waals force, so that the gallium nitride layer is easy to peel off. The structure can also be applied to III-V compound semiconductors other than gallium nitride.
Description
Technical Field
The utility model relates to the technical field of semiconductors, specifically be a semiconductor structure of gallium nitride grows to graphite alkene mask method.
Background
The group III nitride semiconductor taking gallium nitride (GaN) as a research hotspot has excellent photoelectric performance and wide adjustable band gap, and has great advantages and application prospects in the fields of illumination display, high-frequency and high-power electronic devices, optical storage, communication, energy sources and the like. High performance semiconductor devices rely on high quality semiconductor wafers. Currently, gallium nitride thin films are mainly prepared by heteroepitaxy on sapphire substrates. In the conventional epitaxial growth process, how to solve the dislocation and thermal mismatch caused by the lattice mismatch between the epitaxial layer and the substrate becomes a key point of research.
In order to effectively reduce dislocation of growing gan, a mask layer is an effective method, and the mask layer materials used in gan growth mainly include: various metals and silicon compounds, etc. The gallium nitride has the lateral growth capability, the nucleation can be carried out only in the window area under the action of the mask layer, the film forming growth is continued, and the dislocation of the mask area can be blocked, so that the dislocation is reduced. For example: hiramatsu et al use silicon dioxide as a mask layer to form lateral epitaxy of gallium nitride in different modes by controlling Growth time, pressure, etc., thereby achieving the purpose of reducing dislocations (see [ Hiramatsu, Kazumasa, et al. journal of crystalline Growth (2000)221.1-4: 316-). Besides controlling growth parameters, lateral epitaxy in different modes can be achieved by selecting the direction of the mask layer stripes and the crystal orientation of the growing gallium nitride, and dislocation can be reduced to different degrees. For example: kawaguchi et al, using metallic tungsten as a mask layer with stripe directions along crystallographic directions of gallium nitride [1-100] and [11-20], respectively, obtained two growth modes and also two corresponding dislocation reduction mechanisms and effects (see [ Kawaguchi, Yasutoshi, et al. Japanese Journal of Applied Physics (1998)37.7B ]). Although the materials used for the mask layer can play a certain role in improving the quality of gallium nitride, the materials used for the mask layer cannot avoid the defect of low-angle grain boundaries when being used as a mask structure of a three-dimensional material.
SUMMERY OF THE UTILITY MODEL
In order to reduce the dislocation density of gallium nitride, reduce the difficulty of stripping gallium nitride and improve the heat dissipation performance of a gallium nitride layer, the following technical scheme is provided: the utility model provides a semiconductor structure of graphite alkene mask method growth gallium nitride, includes gallium nitride layer, graphite alkene mask layer, substrate layer, its characterized in that: covering a graphene mask layer on the substrate layer by a vapor deposition method, wherein a grating-shaped stripe structure is etched on the graphene mask layer, the area, exposed out of the substrate layer, of the etched graphene mask layer is a window area, and the area, not etched and covered on the substrate layer, of the graphene is a mask area; the gallium nitride layer covers on the surface of the graphene mask layer, and directly nucleates and grows on the substrate layer through the window area, and gallium nitride cannot grow on the surface of the mask area.
The gallium nitride directly nucleates and grows on the substrate layer through the window area, and the gallium nitride can not grow on the surface of the mask area; the lateral epitaxial capability of the gallium nitride enables the gallium nitride layer to be finally formed through combination and film formation in the subsequent growth process after nucleation at the window area.
Preferably, the mask layer is directly grown on the substrate layer by a plasma enhanced chemical vapor deposition method, the graphene is few layers, and the graphene is in the shape of a complete piece of graphene.
Preferably, the gallium nitride of the gallium nitride layer is of a wurtzite structure, and is deposited above the mask layer by an epitaxial process to form a uniform gallium nitride film.
Preferably, the grating-shaped stripe is formed on the mask layer by utilizing a photoetching-etching process, and the etched area exposes out of the upper surface of the substrate layer.
Preferably, the oxygen plasma etching conditions are that the oxygen gas flow rate is 100sccm, the instrument power is 400W, and the etching time is 4 minutes.
Preferably, the grating-shaped stripe is formed by etching with oxygen plasma, and the etching method does not damage the substrate layer under the etching condition of the mask layer, so that the gallium nitride layer can be well nucleated and grown on the exposed substrate layer.
Preferably, the width of the grating-like stripe window area is 20 μm, the width of the mask area is 50 μm, and the period is 70 μm, and the stripe width and period can be adjusted appropriately for different growth methods.
Preferably, the gallium nitride layer directly nucleates growth on the substrate layer through the window region, and the mask layer blocks dislocation extension below the mask region.
Preferably, the grown gallium nitride can be stripped from the substrate by mechanical stripping.
Advantageous effects
The utility model provides a semiconductor construction of graphite alkene mask method growth gallium nitride utilizes the graphite alkene surface to hang the few characteristics of key, is applied to graphite alkene in the mask structure, and mask structure itself is to reducing the gallium nitride dislocation, improves gallium nitride crystal quality and just has fine effect. And the graphene is applied to the mask structure, the quality of the mask layer is improved by utilizing the ultrathin characteristic of the graphene, the low-angle crystal boundary defect caused by the mask layer is reduced, and the characteristic of good heat dissipation is also utilized, so that the performance of a gallium nitride device is greatly improved, and meanwhile, the graphene can release the stress between the substrate layer and the gallium nitride layer to enable the gallium nitride to be easily stripped. The structure has good effects of reducing dislocation of gallium nitride and improving the quality of gallium nitride crystal.
Drawings
Fig. 1 is a schematic structural view of the present invention;
FIG. 2 is a cross-sectional view of a substrate according to the present invention;
fig. 3 is a cross-sectional view of graphene deposited on a substrate according to the present invention;
fig. 4 is a cross-sectional view of the graphene mask etched to a grating shape according to the present invention;
FIG. 5 is a cross-sectional view of the gallium nitride layer grown according to the present invention;
FIG. 6 is a Raman plot of graphene before and after etching;
fig. 7 is a graph of graphene layer number versus etch time.
Reference numerals
The structure comprises a 1-gallium nitride layer, a 2-graphene mask layer, a 3-substrate and 4-grating-shaped stripes.
Detailed Description
The following are specific embodiments of the present invention, and the technical solutions of the present invention are further described, but the present invention is not limited to these embodiments.
Examples
As shown in fig. 1 and 5, a semiconductor structure for growing gallium nitride by a graphene mask method includes a gallium nitride layer 1, a mask layer 2, and a substrate layer 3, in this embodiment, the substrate layer 3 is gallium nitride, fig. 2 is the substrate layer 3, fig. 3 is the substrate layer 3 covered with the graphene mask layer 2 by a plasma enhanced chemical vapor deposition method, fig. 4 is grating-shaped stripes 4 formed on the graphene mask layer 2 by etching, fig. 5 is the process of growing gallium nitride layer 1 on the graphene mask layer 2 by chemical vapor epitaxy, and fig. 2 to 5 illustrate the process of growing gallium nitride by the method. Fig. 6 is a raman graph of graphene in a window region before etching, after etching for 2 minutes, and after etching, the number of graphene layers is mainly roughly judged by the ratio of 2D peak to G peak of graphene in the raman graph, and the ratio of 2D peak to G peak before etching is obviously less than 1, which is multilayer graphene. After 2 minutes of etching, the ratio of the 2D peak to the G peak is approximately equal to 1 and the graphene layer is reduced. After etching for 4 minutes, the characteristic peak of graphene in the image disappears, which indicates that the graphene in the area is successfully etched. Fig. 7 shows the change of the number of graphene layers in the process of etching by oxygen plasma under 400W for 4 minutes, and the change of the number of graphene layers in the etching process is estimated by the ratio of the 2D peak to the G peak in the raman image of graphene, and the reason why the etching speed is fast at the beginning should be that graphene is easier to etch due to the existence of defects on the surface of graphene. The graphene etched with the grating-shaped stripe structure in the technical scheme can also be called a graphene mask layer.
The grating-shaped stripes are of grating-stripe structures etched on the graphene, window areas are formed in areas where the graphene is etched and exposed out of the substrate layer, and mask areas are formed in areas where the graphene is not etched and covered on the substrate layer. The utility model discloses the excellent performance of graphite alkene has mainly been utilized. Because the surface dangling bonds of the graphene are few, the gallium nitride is difficult to nucleate on the surface of the graphene, the graphene is applied to a mask layer for gallium nitride growth, the gallium nitride only can directly nucleate and grow on a substrate through a window area of the mask, the gallium nitride does not grow on the graphene mask, the lateral epitaxy capability of the gallium nitride enables the gallium nitride to be combined and formed into a film even if the gallium nitride only nucleates at a window in the subsequent growth process, therefore, the dislocation of the substrate layer 3 can be blocked by the mask layer, only the dislocation at the window can continuously extend into the gallium nitride layer 1, the effect of reducing the dislocation of the gallium nitride is achieved, and the graphene is a two-dimensional material, and the defect of a low-angle grain boundary, which cannot be avoided by a common. Graphene and gallium nitride are combined by weak van der waals force, the gallium nitride layer is easy to strip, the heat-release adhesive tape can be slowly and uniformly adhered to the surface of the gallium nitride layer 1, the heat-release adhesive tape can be forcefully used for completely stripping the gallium nitride layer 1 from the substrate layer 3, and then the heat-release adhesive tape is tightly attached to a target substrate and then heated, so that the heat-release adhesive tape loses adhesiveness, and the stripping is completed. Meanwhile, the graphene has good heat-conducting property, the heat-radiating capacity of a gallium nitride device grown with the structure can be improved, and the heat conductivity can be described by the following equation:
q＝-χgrad T
wherein q is a heat flux density vector representing the magnitude and direction of heat flow, χ is the coefficient of thermal conductivity, T is temperature, and the negative sign represents the direction. Compared with the common mask material quartz, the thermal conductivity coefficient of the graphene is improved by dozens of times, the q value is correspondingly improved, and the improvement of the q value also represents the improvement of the heat dissipation capability. The utility model discloses in, because graphite alkene directly grows on substrate layer 3 through plasma enhanced chemical vapor deposition method, avoided transferring the pollution that graphite alkene in-process brought usually. The structure 4 grating-shaped stripes are manufactured on the graphene mask layer by a photoetching-etching method, the graphene is etched by adopting oxygen plasma, the etching time is greatly shortened compared with the formation of the stripes of a common mask material, and therefore, the hardening can be selectively skipped in the photoetching process, the subsequent photoresist removal is easier and more thorough, the process is integrally simplified, the etching rate of a common substrate is low, and the substrate layer is protected.
Preferably, the mask layer 2 is graphene.
Preferably, the mask layer 2 is directly grown on the substrate layer 3 by a plasma enhanced chemical vapor deposition method, the graphene is few layers, and the graphene is in the shape of a complete piece of graphene.
Preferably, the gallium nitride of the gallium nitride layer 1 is of a wurtzite structure, and is deposited above the mask layer 2 by an epitaxial process to form a uniform gallium nitride film.
Preferably, the grating-like stripes 4 are formed on the mask layer 2 by using a photolithography-etching process, and the etched areas are exposed on the upper surface of the substrate layer 3.
Preferably, the oxygen plasma etching conditions are that the oxygen gas flow rate is 100sccm, the instrument power is 400W, and the etching time is 4 minutes.
Preferably, the grating-shaped stripes 4 are formed by oxygen plasma etching, and the etching method does not damage the substrate layer 3 under the etching condition of the mask layer 2, so that the gallium nitride layer 1 can be well nucleated and grown on the exposed substrate layer 3.
Preferably, the width of the window area of the grating-like stripes 4 is 20 μm, the width of the mask area is 50 μm and the period is 70 μm, which can be adjusted appropriately for different growth methods.
Preferably, the gallium nitride layer 1 nucleates growth directly on the substrate layer 3 through the window region, while the mask layer 2 blocks dislocation extension below the mask region.
Preferably, the grown gallium nitride layer 1 can be peeled off from the substrate layer 3 by mechanical peeling.
The utility model discloses etch grating-shaped stripe structure on graphite alkene, and grow gallium nitride as the mask this, utilize the mask structure of graphite alkene to realize reducing the dislocation of growing gallium nitride, utilize the characteristic of graphite alkene two-dimensional material simultaneously, realize the high heat dispersion of gallium nitride device; because the surface of the graphene two-dimensional material is lack of a dangling bond, the graphene is used as a mask layer to extend gallium nitride, and the epitaxial layer is contacted with the graphene through weak van der Waals force, so that dislocation can be reduced, crystal quality can be improved, and the graphene and the epitaxial layer can be easily stripped, so that the preparation cost is reduced. Meanwhile, the combination of the gallium nitride and the graphene can realize the manufacture of a flexible device, improve the heat dissipation performance of the device and the like. Therefore the utility model provides a graphite alkene mask structural design for improving gallium nitride growth quality has can effectively reduce gallium nitride dislocation, structure and preparation simple relatively, have advantages such as excellent heat dispersion, has huge application scene in the semiconductor trade.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described in the foregoing embodiments, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the content of the present invention within the protection scope of the present invention.
Claims (3)
1. The utility model provides a semiconductor structure of graphite alkene mask method growth gallium nitride, includes gallium nitride layer, graphite alkene mask layer, substrate layer, its characterized in that: covering a graphene mask layer on the substrate layer by a vapor deposition method, wherein a grating-shaped stripe structure is etched on the graphene mask layer, the area, exposed out of the substrate layer, of the etched graphene mask layer is a window area, and the area, not etched and covered on the substrate layer, of the graphene is a mask area;
the gallium nitride layer covers on the surface of the graphene mask layer, and directly nucleates and grows on the substrate layer through the window area, and gallium nitride cannot grow on the surface of the mask area.
2. The semiconductor structure for growing gallium nitride by the graphene mask method according to claim 1, wherein: the graphene is few-layer, and the graphene is in the shape of a complete piece of graphene.
3. The semiconductor structure for growing gallium nitride by the graphene mask method according to claim 1, wherein: the window area width is 20 μm, the mask area width is 50 μm, and the period is 70 μm.
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| CN113421865A (en) * | 2021-06-21 | 2021-09-21 | 南通大学 | Heat dissipation substrate for gallium nitride-based device and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113421865A (en) * | 2021-06-21 | 2021-09-21 | 南通大学 | Heat dissipation substrate for gallium nitride-based device and preparation method thereof |
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