CN213042885U - Wafer surface metal ion collection device - Google Patents
Wafer surface metal ion collection device Download PDFInfo
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- CN213042885U CN213042885U CN202022409723.0U CN202022409723U CN213042885U CN 213042885 U CN213042885 U CN 213042885U CN 202022409723 U CN202022409723 U CN 202022409723U CN 213042885 U CN213042885 U CN 213042885U
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Abstract
The utility model provides a wafer surface metal ion collection device, the device includes wafer fixed unit and scanning unit, wafer fixed unit is used for fixed wafer, scanning unit is used for right the lower surface contact scanning of wafer, scanning unit is located wafer fixed unit below. The metal collecting solution scanning unit is arranged below the wafer, so that the condition that the metal collecting solution is spread on the surface of the wafer or the metal collecting solution cannot be dragged by a scanning pipe in the scanning process is avoided, and the success rate of detecting the metal collection on the surface of the hydrophilic wafer is improved; the surface of the wafer faces downwards, so that the FFU is prevented from blowing down pollutants onto the surface of the wafer, and the inaccurate detection result is avoided; the scanning unit is also connected with an online configuration metal collecting solution, so that the pollution of the metal collecting solution in manual configuration can be reduced, personnel do not need to contact chemicals, and the safety is improved.
Description
Technical Field
The utility model relates to an integrated circuit makes technical field, in particular to wafer surface metal ion collection device.
Background
At present, the size of semiconductor devices is continuously reduced, the density of elements in a chip is continuously increased, and the distance between the elements becomes smaller and smaller, even to the nanometer level. Trace impurity elements between devices are introduced during the entire process of wafer processing and during the chip manufacturing process (e.g., Chemical Vapor Deposition (CVD), ion implantation (Implant), Etching (ETCH), etc.), which may reduce the yield of the chip. Where the mobility of metal ions in the semiconductor material is very high, known as Mobile Ion Contamination (MIC), when the MIC is introduced into the wafer, it moves throughout the wafer, severely compromising device electrical performance and long term reliability. Therefore, the detection of surface metal ions on the wafer has become an indispensable link in the semiconductor manufacturing process.
In order to realize the test of trace metal ions, a VPD (Vapor Phase Decomposition) machine is required to collect the metal ions on the surface of the wafer, and then detection and analysis are performed in cooperation with ICPMS (Inductively Coupled Plasma Mass Spectrometry), and the step of collecting the metal ions on the surface of the wafer by Vapor Decomposition is as follows: (1) conveying the sample wafer covered with the oxide film to a designated position of full-automatic gas phase decomposition table pretreatment equipment, introducing hydrofluoric acid aerial fog to carry out gas phase decomposition pretreatment on the sample wafer, and waiting for scanning after the treatment; (2) scanning the standard scanning liquid on the surface of the sample wafer subjected to gas phase decomposition pretreatment; (3) collecting standard scanning liquid (VPD solution) after scanning; (4) the collected standard liquid is detected and analyzed by an ICPMS (inductively coupled plasma mass spectrometer).
At present, when a metal collecting solution is used for treating a wafer after ion implantation and plasma etching processes, crystal lattices on the surface of the wafer are damaged due to ion bombardment on the surface of the wafer, so that the surface of the wafer is amorphized, hydrophilicity of the surface of the wafer is enhanced, and the metal collecting solution is spread on the surface of the metal collecting solution or cannot be dragged by a scanning pipe in a scanning process, so that scanning failure is caused.
When the metal collecting solution is scanned on the wafer, the front side of the wafer is scanned upwards, and if an FFU (Fan Filter, i.e., a Filter screen system with a Fan) of the gas phase decomposition machine is contaminated, the wafer may receive the contaminants blown by the FFU, thereby causing an inaccurate detection result.
In addition, the used metal collecting solution is manually prepared, pollution is avoided in the preparation process, the metal collecting solution needs to be added into the scanning tube before scanning every time, the scanning tube is small in size and not easy to add due to the fact that manual addition is needed, and time and labor are wasted in the adding process.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a wafer surface metal ion collection device to solve the metal and collect solution and collect wafer surface metal ion scanning failure and the unsafe technical problem of testing result.
In order to solve the technical problem, the utility model provides a wafer surface metal ion collection device, include: the wafer fixing unit is used for fixing a wafer, and the scanning unit is located below the wafer fixing unit and used for scanning the lower surface of the wafer in a contact mode.
Optionally, the wafer fixing unit includes a rotating shaft and a wafer clamp, the wafer clamp is used for fixing a wafer, the rotating shaft is fixedly connected with the wafer clamp, and the rotating shaft rotates to drive the wafer clamp and the wafer to rotate.
Optionally, the wafer clamp is provided with a plurality of hooks for fixing the wafer.
Optionally, the wafer fixing unit is connected to a control device, and the control device is configured to drive the wafer fixing unit to rotate.
Optionally, the scanning unit includes a scanning tube, the scanning tube is used for loading a metal collecting solution, when the metal collecting solution is full, a surface of the scanning tube has a convex portion, and the metal collecting solution of the convex portion is in contact with the lower surface of the wafer for scanning.
Optionally, the scanning tube is further provided with a liquid transferring cavity for sending the metal collecting solution collected to the metal ions on the surface of the wafer to the inductively coupled plasma mass spectrometer for detection and analysis.
Optionally, a first ultrapure water pipeline is arranged below the scanning pipe, one end of the first ultrapure water pipeline is connected to the scanning pipe, the other end of the first ultrapure water pipeline is connected to an ultrapure water supply device, and the scanning pipe is used for supplying ultrapure water to the scanning pipe before scanning, so as to automatically clean the scanning pipe.
Optionally, a nitrogen pipeline is further arranged below the scanning tube, one end of the nitrogen pipeline is connected with the scanning tube, the other end of the nitrogen pipeline is connected with a nitrogen supply device, and the nitrogen pipeline is used for drying the scanning tube before scanning when the scanning tube is automatically cleaned.
Optionally, a drain pipe is further disposed below the scanning pipe, one end of the drain pipe is connected to the scanning pipe, and the drain pipe is used for draining the ultra-pure water which is used for automatically cleaning the scanning pipe before scanning.
Optionally, a metal collecting solution pipeline is further arranged below the scanning tube, one end of the metal collecting solution pipeline is connected with the scanning tube, and the other end of the metal collecting solution pipeline is connected with a metal collecting solution storage tank and used for adding a metal collecting solution into the scanning tube.
Compared with the prior art, the beneficial effects of the utility model are that:
the utility model provides a wafer surface metal ion collection device, the device includes wafer fixed unit and scanning unit, wafer fixed unit is used for fixed wafer, scanning unit is used for right the lower surface contact scanning of wafer, scanning unit is located wafer fixed unit below. The metal collecting solution scanning unit is arranged below the wafer, so that the condition that the metal collecting solution is spread on the surface of the wafer or the metal collecting solution cannot be dragged by the scanning pipe in the scanning process is avoided, and the success rate of detecting the metal collection on the surface of the hydrophilic wafer is improved. In addition, the surface of the wafer faces downwards, so that the FFU is prevented from blowing down pollutants on the surface of the wafer, and the inaccuracy of a detection result is avoided. In addition, the scanning unit is also connected with an online configuration metal collecting solution, so that the pollution of the metal collecting solution in manual configuration can be reduced, personnel do not need to contact chemicals, and the safety is improved.
Drawings
Fig. 1 is a schematic view of a wafer surface metal ion collecting device according to an embodiment of the present invention;
the reference numerals are used to designate the same elements,
100-wafer fixing unit, 101-rotating shaft; 102-wafer clamp; 103-hook jaw; 104-wafer;
200-a scanning unit; 201-scanning tube; 201 a-metal collection solution projection; 202-a first ultrapure water conduit; 202 a-a first valve; 203-nitrogen line; 203 a-a second valve; 204-a drain pipe; 204 a-a third valve; 205-metal collection solution conduit; 205 a-a fourth valve; 206-a first flow pump; 207-metal collecting solution storage tank; 207 a-upper level limit sensor; 207 b-a liquid level lower limit sensor; 208-a first chemical liquid conduit; 208 a-a second flow pump; 209-a second chemical liquid pipeline; 209 a-third flow pump; 210-a second ultrapure water conduit; 210 a-a fourth flow pump; 211-pipetting chamber.
Detailed Description
The following describes the wafer surface metal ion collecting device according to the present invention in further detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in simplified form and are not to precise scale, and are provided for convenience and clarity in order to facilitate the description of the embodiments of the present invention.
Specifically, please refer to fig. 1, which is a schematic diagram of a wafer surface metal ion collecting device according to an embodiment of the present invention. As shown in fig. 1, the present embodiment provides a wafer surface metal collecting device, which includes: the wafer fixing unit 100 is used for fixing the wafer 104, the scanning unit 200 is located below the wafer fixing unit 100, and the scanning unit 200 is used for contact scanning of the lower surface of the wafer 104.
Referring to fig. 1, the wafer fixing unit 100 includes, for example, a spindle 101 and a wafer chuck 102, the spindle 101 is fixedly connected to the wafer chuck 102, the wafer chuck 102 is used for fixing a wafer 104, the spindle 101 rotates to drive the wafer chuck 102 to rotate, so that metal ions on the lower surface of the entire wafer 104 in the wafer chuck 102 are scanned and collected, the spindle 101 can also move up and down, and the wafer chuck 102 can also be turned over.
The wafer chuck 102 further includes a plurality of fingers 103 for holding a wafer 104. In this embodiment, the wafer chuck 102 is provided with three hooks 103, and in a specific implementation, the number of the hooks may be set by a person skilled in the art according to an actual situation, which is not limited herein.
The wafer fixing unit 100 is further connected to a control device (not shown), such as a motor, for driving the rotation shaft 101 of the wafer fixing unit 100 to rotate. In practice, the control device may also be other structures known to those skilled in the art, and is not limited herein.
With continued reference to fig. 1, the scanning unit 200 includes a scanning tube 201, the scanning tube 201 is used for loading a metal collecting solution, when the metal collecting solution is full, a surface of the scanning tube 201 has a convex portion 201a, and the metal collecting solution of the convex portion 201a contacts and scans with the lower surface of the wafer 104. The upper portion of the scanning tube 201 may be a flared opening or a vertical opening, and in this embodiment, the upper portion of the scanning tube 201 is a flared opening, which is not limited herein. The scanning tube 201 is further provided with a liquid transferring cavity 211 for sending the metal collecting solution collected to the metal ions on the surface of the wafer 104 to an ICPMS (inductively coupled plasma mass spectrometer) for detection and analysis.
A first ultra-pure water pipe 202 is disposed below the scanning pipe 201, one end of the first ultra-pure water pipe 202 is connected to the scanning pipe 201, and the other end is connected to an ultra-pure water supply device (not shown), and the scanning pipe 201 is used for supplying ultra-pure water to the scanning pipe 201 before scanning so as to automatically clean the scanning pipe 201. A first valve 202a is arranged on the first ultrapure water pipe 202, that is, the first valve 202a is a first ultrapure water pipe valve.
A nitrogen pipeline 203 is further arranged below the scanning tube 201, one end of the nitrogen pipeline is connected with the scanning tube 201, the other end of the nitrogen pipeline is connected with a nitrogen supply device (not shown in the figure), and the nitrogen pipeline is used for drying the scanning tube 201 before scanning when the scanning tube 201 is automatically cleaned. The nitrogen pipeline 203 is provided with a second valve 203a, i.e. the second valve 203a is a nitrogen pipeline valve.
A drain pipe 204 is further arranged below the scanning pipe 201, one end of the drain pipe 204 is connected with the scanning pipe 201, and the drain pipe 204 is used for discharging the ultra-pure water for automatically cleaning the scanning pipe 201 before scanning. The drain pipe 204 is provided with a third valve 204a, i.e. the third valve 204a is a drain pipe valve.
A metal collecting solution pipeline 205 is further arranged below the scanning pipe 201, one end of the metal collecting solution pipeline 205 is connected with the scanning pipe 201, and the other end of the metal collecting solution pipeline 205 is connected with a metal collecting solution storage tank 207 and used for adding metal collecting solution into the scanning pipe 201. The decomposing solution pipe 205 is provided with a fourth valve 205a, that is, the fourth valve 205a is a metal collecting solution pipe valve. Further, a first flow pump 206 is disposed on the metal collecting solution pipe 205 for controlling the flow rate of the metal collecting solution added to the scanning pipe 201.
The metal collecting solution storage tank 207 may be configured with a metal collecting solution on-line, and the metal collecting solution is configured with, for example, a first chemical liquid, a second chemical liquid, and purified water, which are respectively added to the metal collecting solution storage tank 207 through a first chemical liquid pipe 208, a second chemical liquid pipe 209, and a second purified water pipe 210. Specifically, in this embodiment, the first chemical liquid is, for example, hydrogen peroxide, and the second chemical liquid is, for example, hydrofluoric acid, which is not limited in this embodiment.
The metal collecting solution storage tank 207 may further be provided with an upper liquid level limit sensor 207a and a lower liquid level limit sensor 207b for monitoring whether the liquid level of the metal collecting solution in the metal collecting solution storage tank 207 satisfies a set requirement.
The first chemical liquid pipeline 208 is provided with a second flow pump 208a, and the second flow pump 208a is used for controlling the flow rate of the first chemical liquid. The second chemical liquid pipeline 209 is provided with a third flow pump 209a, and the third flow pump 209a is used for controlling the flow rate of the second chemical liquid. The second purified water pipeline 210 is provided with a fourth flow pump 210a, and the fourth flow pump 210a is used for controlling the flow of the purified water.
The metal collecting solution storage tank 207 is an online metal collecting solution device, the metal collecting solution is configured by a first chemical liquid pipeline 208, a second chemical liquid pipeline 209 and a second purified water pipeline 210 which are needed for introducing a metal collecting solution from a plant service end, the proportion of each chemical liquid is regulated by a flow pump on the pipeline, each chemical liquid is introduced into the metal collecting solution storage tank 207 with a liquid level upper limit sensor 207a and a liquid level lower limit sensor 207b, when the liquid level of the metal collecting solution reaches the liquid level upper limit sensor 207a, the flow pump stops working, and when the liquid level of the metal collecting solution reaches the liquid level lower limit sensor 207b, the flow pump starts to configure the metal collecting solution.
Before the scanning operation is started, the first valve 202a is opened, and the first ultrapure water pipeline 202 leads purified water into the scanning pipe 201 for automatic cleaning; then, the third valve 204a is opened, and the purified water which is cleaned by the scanning pipe 201 is discharged through the drain pipe 204; then, the second valve 203a is opened, the nitrogen pipeline 203 introduces nitrogen into the scanning tube 201 for purging, and the scanning tube 201 is dried, in this embodiment, the nitrogen is a normal temperature gas; the above automatic cleaning method is repeated 4-6 times to complete the automatic cleaning of the scanning tube 201 before the start of scanning.
A volume of metal collection solution is introduced into the scan tube 201 by the first flow pump 206 before the scan operation is started, and the scan tube 201 is automatically purged with ultra-pure water and nitrogen before the next scan.
The wafer clamp 102 is turned over, the hook 103 is opened, the wafer 104 is placed on the wafer clamp 102 through a mechanical arm, the hook 103 is rotated, the wafer 104 is fixed on the wafer clamp 102, and the wafer clamp 102 is turned over, so that the surface to be scanned of the wafer 104 faces downwards.
The surface of wafer 104 is held down by rotatable wafer chuck 102 while collecting metal ions from the surface of the wafer. The scanning tube 201 containing the metal collecting solution is placed under the wafer 104, when the metal collecting solution is filled up, the metal collecting solution has a convex portion 201a due to the surface tension, so that the metal collecting solution in the convex portion 201a is in contact with the surface of the wafer 104 for scanning, and at the moment, the metal collecting solution cannot spread on the surface of the wafer 104 due to the gravity of the metal collecting solution and is always in a contact state. The wafer 104 is rotated by the rotating shaft 101 to contact with the metal collecting solution to complete the collection of the surface metal ions of the wafer 104, and the collected metal collecting solution is taken out from the liquid transfer cavity 211 of the scanning tube 201 and sent to the inductively coupled plasma mass spectrometry for analysis.
After the wafer 104 is scanned, the wafer clamp 102 is turned over, the hook 103 is opened, and the wafer 104 is taken away by the manipulator.
In this embodiment, the surface of the wafer 104 to be scanned is facing downward, so that the surface of the wafer 104 is not affected even if the gas phase decomposition machine is contaminated.
In summary, the utility model provides a wafer surface metal ion collection device, which avoids the situation that the metal collection solution is spread on the wafer surface or the metal collection solution can not be dragged by the scanning tube in the scanning process by arranging the metal collection solution scanning unit below the wafer, and improves the success rate of detecting the collection of the hydrophilic wafer surface metal ions; by downwards arranging the surface to be scanned of the wafer 104, the FFU is prevented from blowing down pollutants on the surface of the wafer, and the inaccurate detection result is avoided; through online configuration metal collecting solution, the pollution of metal collecting solution in artificial configuration is reduced, personnel do not need to contact chemicals, and the safety is improved.
The above description is only for the preferred embodiment of the present invention and is not intended to limit the scope of the present invention, and any modification and modification made by those skilled in the art according to the above disclosure are all within the scope of the claims.
Claims (10)
1. A wafer surface metal ion collection device, comprising: the wafer fixing unit is used for fixing a wafer, and the scanning unit is located below the wafer fixing unit and used for scanning the lower surface of the wafer in a contact mode.
2. The apparatus as claimed in claim 1, wherein the wafer fixing unit includes a shaft and a wafer clamp, the wafer clamp is used for fixing a wafer, the shaft is fixedly connected to the wafer clamp, and the shaft rotates to rotate the wafer clamp and the wafer.
3. The wafer surface metal ion collection device of claim 2, wherein the wafer chuck is provided with a plurality of fingers for holding the wafer.
4. The wafer surface metal ion collection device of claim 2, wherein a control device is connected to the wafer fixing unit, and the control device is used for driving the wafer fixing unit to rotate.
5. The wafer surface metal ion collection device of claim 1, wherein the scanning unit comprises a scanning tube, the scanning tube is used for loading a metal collection solution, when the metal collection solution is full, the surface of the scanning tube has a convex part, and the metal collection solution of the convex part is in contact with the lower surface of the wafer for scanning.
6. The wafer surface metal ion collection device of claim 5, wherein the scanning tube is further provided with a liquid transferring cavity for sending the metal collection solution collected on the wafer surface metal ions to the inductively coupled plasma mass spectrometer for detection and analysis.
7. The wafer surface metal ion collection device of claim 5, wherein a first ultrapure water pipe is arranged below the scanning pipe, one end of the first ultrapure water pipe is connected with the scanning pipe, the other end of the first ultrapure water pipe is connected with an ultrapure water supply device, and the scanning pipe is used for supplying ultrapure water to the scanning pipe before scanning so as to automatically clean the scanning pipe.
8. The wafer surface metal ion collection device of claim 5, wherein a nitrogen gas pipe is further arranged below the scanning tube, one end of the nitrogen gas pipe is connected with the scanning tube, the other end of the nitrogen gas pipe is connected with a nitrogen gas supply device, and the nitrogen gas pipe is used for drying the scanning tube before scanning when the scanning tube is automatically cleaned.
9. The wafer surface metal ion collection device of claim 5, wherein a drain pipe is further arranged below the scanning pipe, one end of the drain pipe is connected with the scanning pipe, and the drain pipe is used for draining ultra-pure water for automatically cleaning the scanning pipe before scanning.
10. The wafer surface metal ion collecting device as recited in claim 5, wherein a metal collecting solution pipeline is further disposed below the scanning tube, one end of the metal collecting solution pipeline is connected to the scanning tube, and the other end of the metal collecting solution pipeline is connected to a metal collecting solution storage tank for adding a metal collecting solution into the scanning tube.
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| CN202022409723.0U CN213042885U (en) | 2020-10-23 | 2020-10-23 | Wafer surface metal ion collection device |
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| CN202022409723.0U CN213042885U (en) | 2020-10-23 | 2020-10-23 | Wafer surface metal ion collection device |
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| CN213042885U true CN213042885U (en) | 2021-04-23 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117637591A (en) * | 2024-01-25 | 2024-03-01 | 合肥晶合集成电路股份有限公司 | Wafer metal element analysis method and analysis system |
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- 2020-10-23 CN CN202022409723.0U patent/CN213042885U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117637591A (en) * | 2024-01-25 | 2024-03-01 | 合肥晶合集成电路股份有限公司 | Wafer metal element analysis method and analysis system |
| CN117637591B (en) * | 2024-01-25 | 2024-04-19 | 合肥晶合集成电路股份有限公司 | Wafer metal element analysis method and analysis system |
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