CN213042740U - High-power chip - Google Patents
High-power chip Download PDFInfo
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- CN213042740U CN213042740U CN202022276679.0U CN202022276679U CN213042740U CN 213042740 U CN213042740 U CN 213042740U CN 202022276679 U CN202022276679 U CN 202022276679U CN 213042740 U CN213042740 U CN 213042740U
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- piezo
- copper
- porcelain body
- copper electrode
- power chip
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Abstract
The utility model relates to a high power chip, be in including the piezo-resistor porcelain body and setting the compound copper electrode on the piezo-resistor porcelain body surface, compound copper electrode includes first copper electrode, and it sets up the surface of the piezo-resistor porcelain body, with the surface direct contact of the piezo-resistor porcelain body, second copper coating, it sets up the surface of first copper electrode, second copper coating is at 2-5 microns, the utility model discloses simple structure with the copper facing layer thickness restriction at 2-5 microns, reduced the cost and dropped into, do not change its good performance, guaranteed good electrically conductive, performance such as cohesion.
Description
Technical Field
The utility model relates to a high power chip technical field especially relates to a high power chip with copper coating.
Background
A varistor is an element having a transient voltage suppression function, and may be used instead of a combination of a transient suppression diode, a zener diode, and a capacitor. The piezoresistors can protect the circuits of the IC and other devices from damage due to electrostatic discharge, surge, and other transient currents (e.g., lightning strikes, etc.). The voltage dependent resistor is generally connected in parallel in a circuit for use, and when the voltage at two ends of the voltage dependent resistor changes rapidly, the short circuit of the voltage dependent resistor fuses the current fuse, thereby playing a role in protection. Piezoresistors are commonly used in circuits for power supply over-voltage protection and voltage stabilization. The electrode paste used on the piezoresistor at present is mainly silver paste, and mainly comprises silver powder, a glass phase, organic resin and a solvent. The content of metallic silver serving as a main component of the slurry is generally 70-80%, and with the rapid increase of the silver price in the recent 3 years, the selling price of the slurry is generally 2700-3700 RMB/Kg, so that great cost pressure is brought to manufacturers producing the piezoresistors, and the development and scale expansion of the piezoresistors are greatly restricted.
Based on this, replacing silver paste with copper paste will greatly reduce the investment of cost.
SUMMERY OF THE UTILITY MODEL
Based on above-mentioned technical defect, the utility model provides a high power chip has solved the technical defect among the above-mentioned technical problem.
The utility model relates to a high power chip, be in including the piezo-resistor porcelain body and setting the compound copper electrode on the piezo-resistor porcelain body surface, compound copper electrode includes first copper electrode, and it sets up the surface of the piezo-resistor porcelain body, with the surface direct contact of the piezo-resistor porcelain body, second copper coating, it sets up the surface of first copper electrode, second copper coating thickness is at 2-5 microns.
Further, the thickness of the first copper electrode is 6-9 microns, and the thickness of the second copper plating layer is 6-9 microns.
Further, the device also comprises a protection box, a cotton pad is padded in the protection box, and the high-power chip is placed on the cotton pad.
The utility model relates to a high power chip, simple structure limits the copper facing layer thickness at 2-5 microns, has reduced the cost and has dropped into, does not change its good performance, has guaranteed performances such as good electrically conductive, cohesion.
Drawings
Fig. 1 is a sectional structure view of the present invention.
Wherein: 1. a high power chip; 2. a varistor ceramic body; 3. a composite copper electrode; 4. a first copper electrode; 5. and a second copper plating layer.
Detailed Description
The present invention will be further explained with reference to the accompanying drawings.
According to figure 1 the utility model relates to a high power chip 1, be in including the piezo-resistor porcelain body 2 and setting compound copper electrode 3 on the piezo-resistor porcelain body 2 surface, compound copper electrode 3 includes first copper electrode 4, and its setting is in the surface of piezo-resistor porcelain body 2, with the surface direct contact of piezo-resistor porcelain body 2, second copper plate 5 layers of its setting is in the surface of first copper electrode 4, second copper plate 5 thickness is at 2-5 microns.
Further, the thickness of the first copper electrode 4 is 6-9 microns, and the thickness of the second copper plating layer 5 is 6-9 microns.
Further, the device also comprises a protection box, wherein a cotton pad is filled in the protection box, and the high-power chip 1 is placed on the cotton pad.
The foregoing is a more detailed description of the present invention, taken in conjunction with the specific preferred embodiments thereof, and it is not intended that the invention be limited to the specific embodiments shown and described. To the utility model, technical field's ordinary technical personnel do not deviate from the utility model discloses under the prerequisite of design, can also make a plurality of simple deductions or replacement, all should regard as belonging to the utility model discloses a protection scope.
Claims (3)
1. A high power chip, characterized by: including the piezo-resistor porcelain body with set up compound copper electrode on the piezo-resistor porcelain body surface, compound copper electrode includes first copper electrode, and its setting is in the surface of piezo-resistor porcelain body, with the surface direct contact of piezo-resistor porcelain body, second copper coating, its setting is in the surface of first copper electrode, second copper coating thickness is at 2-5 microns.
2. The high power chip of claim 1, wherein: the thickness of the first copper electrode is 6-9 microns, and the thickness of the second copper plating layer is 6-9 microns.
3. The high power chip of claim 1, wherein: the high-power chip packaging structure is characterized by further comprising a protection box, wherein a cotton pad is padded in the protection box, and the high-power chip is placed on the cotton pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022276679.0U CN213042740U (en) | 2020-10-14 | 2020-10-14 | High-power chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022276679.0U CN213042740U (en) | 2020-10-14 | 2020-10-14 | High-power chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213042740U true CN213042740U (en) | 2021-04-23 |
Family
ID=75536756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022276679.0U Active CN213042740U (en) | 2020-10-14 | 2020-10-14 | High-power chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213042740U (en) |
-
2020
- 2020-10-14 CN CN202022276679.0U patent/CN213042740U/en active Active
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