CN212935767U - Power switching control circuit - Google Patents
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- CN212935767U CN212935767U CN202021476319.9U CN202021476319U CN212935767U CN 212935767 U CN212935767 U CN 212935767U CN 202021476319 U CN202021476319 U CN 202021476319U CN 212935767 U CN212935767 U CN 212935767U
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Abstract
The application discloses power switching control circuit, power switching control circuit are used for alternating current-direct current power control system, and wherein, the circuit includes: the main control unit consists of an on-off control switch, wherein the input end of the main control unit is connected with an input source; each sub-control unit of the first to nth sub-control units is composed of a semiconductor switch, wherein an input end of each sub-control unit is connected with an output end of the main control unit, and an output end of each sub-control unit is connected with an input end of the load, so that when the main control unit and the first to nth sub-control units are closed, the load is supplied with power. Therefore, the main control unit is composed of the on-off control switch, and each sub-control unit of the first to Nth sub-control units is composed of the semiconductor switches, so that the problems that in the related art, due to the fact that an arc discharge phenomenon exists instantly when the electromagnetic relay is on and off, contact damage is caused, the service life of the relay is shortened, and cost can be greatly reduced are effectively solved.
Description
Technical Field
The present disclosure relates to power distribution and control technologies, and in particular, to a power switching control circuit.
Background
In the related art, when performing power distribution and switching control circuits, there are mainly two ways: (1) the main control unit and the sub-control units both adopt electromagnetic relays as control switches; (2) the main control unit adopts an electromagnetic relay as a control switch, and the sub-control units adopt IGBTs as control switches.
However, the electromagnetic relay contact has an arc discharge phenomenon in the on-off process, which can cause damage to the relay contact and reduce the working life of the relay under the condition of long-term operation, so that the relay switching control scheme has the problem of short working life, and the first mode sub-control unit cannot realize accurate adjustment of output power and has low control accuracy on the size of the output power; the sub-control unit of the second mode has larger conduction loss during conduction operation due to larger saturation conduction voltage drop of the IGBT, and needs to be solved urgently.
SUMMERY OF THE UTILITY MODEL
The application provides a power switching control circuit, constitute the main control unit through the on-off control switch, constitute first to every sub-control unit of Nth sub-control unit by semiconductor switch, effectively solved among the correlation technique because of adopting electromagnetic type relay to appear having the arc phenomenon in the break-make in the twinkling of an eye to lead to the contact damage, reduce the problem of relay life-span, but also greatly reduced cost.
The embodiment of the application provides a power switching control circuit, and power switching control circuit is used for alternating current-direct current power control system, and wherein, the circuit includes:
the main control unit consists of an on-off control switch, wherein the input end of the main control unit is connected with an input source;
the power supply comprises a first sub-control unit, a second sub-control unit, a third sub-control unit, a fourth sub-control unit, a fifth sub-control unit, a sixth sub-control unit and a seventh sub-control unit, wherein each sub-control unit of the first sub-control unit, the sixth sub-control unit.
Optionally, the main control unit and the first to nth sub-control units each have a control end to control the main control unit and/or the sub-control units to turn off or on according to an input signal of a circuit.
Optionally, the input signal is a preset level signal or a Pulse Width Modulation (PWM) signal, so that the main control unit generates a control signal of each sub-control unit according to the preset level signal or the PWM signal to control the on-time and/or the on-frequency of each sub-control unit. Optionally, the on-off control switch is made of a silicon material or a new material, and may be any one of a triode, an IGBT (Insulated Gate Bipolar Transistor), an IGCT (Integrated Gate-shared Thyristor), a GCT (Gate-shared Thyristor), an IEGT (Injection Enhanced Gate Transistor), a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), and a HEMT (High Electron Mobility Transistor).
Optionally, the novel material comprises one or more of a silicon carbide material, a gallium nitride material, a gallium oxide material, a diamond material, and a graphene material.
Optionally, the semiconductor switch is a half-controlled device or a full-controlled device.
Optionally, the half-controlled or fully-controlled device comprises one or more of a unidirectional thyristor, a bidirectional thyristor, a gate turn-off thyristor, a GCT and an IGCT.
Optionally, the fully controlled device comprises one or more of an IGBT, an IEGT, a MOSFET and a HEMT.
Optionally, the power switching control circuit further includes:
and the distribution module is used for determining the N according to the power distribution mode of the load, and is connected with each sub-control unit.
Optionally, the main control unit is provided with a limiting element to limit the voltage spike within a preset range.
Optionally, the power switching control circuit further includes:
at least one signal acquisition element connected in series with the master control unit.
The main control unit is composed of the on-off control switch, and each sub-control unit of the first to Nth sub-control units is composed of the semiconductor switches, so that the problems of contact damage and relay service life reduction caused by the fact that an electromagnetic relay is adopted in the related technology due to the fact that arc discharge occurs instantly when the electromagnetic relay is switched on and off are solved effectively.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic diagram of a circuit topology structure in which a main control unit and a sub-control unit both adopt electromagnetic relays as control switches in the related art;
FIG. 2 is a schematic diagram of a circuit topology in which the main control unit employs an electromagnetic relay as a control switch and the sub-control units employ IGBTs as control switches in the related art;
fig. 3 is a schematic structural diagram of a power switching control circuit according to an embodiment of the present disclosure;
fig. 4 is a schematic diagram of a topology of a power switching control circuit according to an embodiment of the present application.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present application and should not be construed as limiting the present application.
The power switching control circuit of the embodiment of the present application is described below with reference to the drawings.
Before the power switching control circuit of the embodiment of the present application is introduced, two control methods in the related art will be briefly described.
In the application fields of power distribution and switching control circuits, such as battery output power distribution and automobile air conditioner heating power distribution and switching control, the main control unit and the sub-control units both adopt electromagnetic relays as control switches, or the main control unit adopts electromagnetic relays as control switches and the sub-control units adopt IGBTs as control switches.
Specifically, as shown in fig. 1, the main control unit and the sub-control unit both adopt an electromagnetic relay as a control switch as shown in fig. 1. The electromagnetic relay has the advantages that the arc discharge phenomenon exists in the on-off process of the contacts of the electromagnetic relay, the contacts of the electromagnetic relay can be damaged due to the arc discharge phenomenon, the service life of the relay can be shortened under the condition of long-term work, the problem of short service life exists in the relay switching control scheme, the contact of the electromagnetic relay is long in off-time, generally in the millisecond level, the contacts are easy to adhere under the condition of load overcurrent or short circuit, and the overcurrent or short circuit protection function is difficult to realize; meanwhile, the electromagnetic relay is adopted in the sub-control units as the on-off control switch, the output power can be distributed and controlled only in a mode of increasing or reducing the number of the sub-control units, accurate adjustment of the output power cannot be achieved, the control precision of the output power is low, in addition, the high-voltage direct-current relay needs to be adopted in a high-voltage direct-current system, the high-voltage direct-current relay is generally expensive in price, and the problem of high system cost exists by adopting the scheme.
As shown in fig. 2, the main control unit adopts an electromagnetic relay as a control switch, and the sub-control units adopt IGBTs as control switches, as shown in fig. 2. Because the main control unit of the relay is the same as the mode in the figure 1, the arc discharge phenomenon naturally exists, so that the contact of the relay is damaged, the working life of the relay can be shortened under the condition of long-term working, and the problem of short working life is caused; for the sub-control unit, because the IGBT saturation conduction voltage drop is large, there is a problem of large conduction loss during conduction operation, and the IGBT needs to bear a large surge current under extreme working conditions. If the positive and negative polarities of the high-voltage direct current source are reversely connected, under the condition that the electromagnetic relay contact in the main control unit is attracted, the high-voltage direct current source is reversely added between the collector and the emitter of the IGBT in the sub-control unit, so that the parallel diodes in the IGBT are conducted in the forward direction, and the power distribution and switching failure of the sub-control unit is caused, and the normal work of the system is influenced.
Therefore, the present application provides a power switching control circuit based on the above problems, which not only has low on-state power consumption, long service life, strong capability of resisting instant surge current, but also has low cost, and greatly improves the energy efficiency and reliability of power electronic equipment.
Specifically, fig. 3 is a schematic structural diagram of a power switching control circuit according to an embodiment of the present disclosure. In this embodiment, the power switching control circuit is used for an ac/dc power control system, such as power distribution and switching of a battery system, a heating system of an automobile air conditioner, a heating and home heating system of a home air conditioner, lighting and flashing of a lamp, an elevator, motor driving, an energy storage device, solar and wind power generation, medical equipment, rail transit, a high-voltage grid switch, and the like, and has the characteristics of higher reliability, longer service life, stronger impact current resistance, fine power modulation, lower cost, easy realization of overvoltage, overcurrent, short circuit, over-temperature protection functions, and the like
As shown in fig. 3, the power switching control circuit 10 includes: a main control unit 100, and first to nth sub-control units 200 (e.g., a first sub-control unit 1, a second sub-control unit 2, a third sub-control unit 3, a fourth sub-control unit 4, … …, an nth sub-control unit N).
As shown in fig. 3, the main control unit 100 may be composed of an on-off control switch, wherein an input end of the main control unit 100 is connected to an input source.
Optionally, in some embodiments, the input signal is a preset level signal or a pulse width modulation PWM signal, so that the main control unit generates a control signal of each sub-control unit according to the preset level signal or the PWM signal to control the on-time and/or the on-frequency of each sub-control unit.
It is understood that the preset level signal can be a normally high or normally low level signal, and can also be a Pulse Width Modulation (PWM) signal. That is to say, in the embodiment of the present application, the main control unit 100 may perform a PWM chopping mode on the thyristors in each of the first to nth sub-control units 200, and apply a control signal to the control electrodes of the thyristors to control the conduction time of the thyristors, so as to implement distribution and control of the output power.
Specifically, pulse width modulation is an analog control mode, and modulates the bias of the base of a transistor or the gate of an MOSFET according to the change of a corresponding load to change the conduction time of the transistor or the MOSFET, so as to change the output of a switching voltage-stabilized power supply, so that the output voltage of the power supply is kept constant when the working condition changes, and the pulse width modulation is a very effective technology for controlling an analog circuit by using a digital signal of a microprocessor. Based on the above principle, as a possible implementation manner, in the embodiment of the present application, the main control unit 100 may perform a PWM chopping manner on the thyristor in each of the first to nth sub-control units, and apply a control signal to the control electrode of the thyristor to control the conduction time of the thyristor, or perform an intermittent pulse group manner, so as to implement accurate distribution and control of the output power.
Optionally, in some embodiments, the on-off control switch is made of silicon material or new material, and is any one of a transistor, an IGBT, an IGCT, a GCT, an IEGT, a MOSFET, and a HEMT.
Because the turn-off time of the IGBT is fast, usually in microsecond level, the IGBT is used as the on-off control switch, the control signal is applied to the control electrode G1 of the IGBT, and the overvoltage, overcurrent, short circuit and overtemperature protection functions can be safely and reliably realized by combining with a related sampling circuit.
Optionally, in some embodiments, the novel material comprises one or more of a silicon carbide material, a gallium nitride material, a gallium oxide material, a diamond material, and a graphene material. It should be noted that the saturation conduction voltage drop value of the unidirectional silicon controlled rectifier is generally between 1.3V and 1.4V, and the overload current capability of the unidirectional silicon controlled rectifier with the same current specification is much larger than that of the IGBT, so that the unidirectional silicon controlled rectifier is used as a control switch to effectively reduce conduction loss and reduce heat productivity during work, thereby improving efficiency, and meanwhile, the excellent overload current capability can greatly improve reliability and service life.
Each of the first to nth sub-control units 200 may be composed of a semiconductor switch,
alternatively, in some embodiments, the semiconductor switch may be a half-controlled device or a fully-controlled device.
Optionally, in some embodiments, the half-controlled device or the full-controlled device may include one or more of a unidirectional thyristor, a bidirectional thyristor, a gate turn-off thyristor, a GCT and an IGCT, preferably, the half-controlled device is a unidirectional thyristor. It should be noted that, in the dc system, the unidirectional thyristor, the bidirectional thyristor, and the gate turn-off thyristor can bear higher blocking voltage in the forward and reverse directions, so that the entire power switching control circuit 10 has the function of preventing reverse connection.
Optionally, in some embodiments, the fully controlled device may include one or more of an IGBT, an IEGT, a MOSFET, and a HEMT. Wherein, an input terminal of each sub-control unit (e.g., the input terminal 1 of the first sub-control unit 1, the input terminal 1 of the second sub-control unit 2, the input terminal J31 of the third sub-control unit 3, the input terminals J41, … … of the fourth sub-control unit 4, and the input terminal JN1 of the nth sub-control unit N) is connected to an output terminal of the main control unit, and an output terminal of each sub-control unit (e.g., the output terminal 2 of the first sub-control unit 1, the output terminal 2 of the second sub-control unit 2, the output terminal J32 of the third sub-control unit 3, the output terminal J42, … … of the fourth sub-control unit 4, and the output terminal JN2 of the nth sub-control unit N) is connected to an input terminal of the load, so as to provide power for the load when the main control unit 100 and the first to nth sub-control units 200 are all closed.
Therefore, according to the power switching control circuit 10 of the embodiment of the application, the main control unit 100 is composed of the on-off control switch, and each sub-control unit of the first to nth sub-control units 200 is composed of the semiconductor switches, so that the problems of contact damage and relay service life reduction caused by the fact that an arc discharge phenomenon occurs instantly when the electromagnetic relay is switched on and off in the related art are solved effectively.
Optionally, in some embodiments, the main control unit 100 and the first to nth sub-control units 200 each have a control terminal to control the turn-off or turn-on of the main control unit 100 and/or the sub-control units according to the control signal generated by the input source.
That is to say, in the embodiment of the present application, the control terminal may control the main control unit 100 to turn off or on, or the sub-control units to turn off or on, or the main control unit 100 and the sub-control units to turn off or on according to the control signal generated by the input source. Each of the first to nth sub-control units 200 may be individually turned on or off.
Optionally, in some embodiments, the power switching control circuit further includes: and the distribution module is used for determining N according to the power distribution mode of the load and is connected with each sub-control unit.
It can be understood that, in order to ensure accurate allocation of the output power, the embodiment of the present application may be provided with an allocation module, and the allocation module determines N allocation modules according to the power allocation manner of the load, and the allocation module is connected to each sub-control unit, so that the allocation and control of the output power can be realized by controlling the allocation module to increase or decrease the number of the sub-control units. In this control mode, the sub-control unit operates in a fully on or fully off mode.
Optionally, in some embodiments, the main control unit 100 may be provided with a limiting element to limit voltage spikes within a preset range, thereby implementing an overvoltage protection function.
As a possible implementation manner, in the main control unit 100, a resistor and a capacitor may be connected between the collector and the emitter of the IGBT serving as an on-off control switch to limit a voltage spike;
as another possible implementation manner, in the main control unit 100, a resistor and a TVS (Transient Voltage regulator) may be connected between a collector and a gate of the IGBT as an on-off control switch to limit a Voltage spike.
It should be noted that the above examples are only exemplary and are not intended to limit the present application, and those skilled in the art may set different limiting elements according to practical situations to limit the voltage spike within the preset range. The preset range may be a range preset by a user, a range obtained through a limited number of experiments, or a range obtained through a limited number of computer simulations, and is not specifically limited herein.
Optionally, in some embodiments, the power switching control circuit further includes: at least one signal acquisition element. Wherein at least one signal acquisition element is connected in series with the main control unit 100.
As a possible implementation manner, in the embodiment of the present application, a sampling resistor, a current sensor, and a current transformer are connected in series between a collector or an emitter of an IGBT that is used as an on-off control switch in the main control unit 100 to acquire signals for overcurrent and short-circuit protection, and the signals are subjected to feedback processing and then combined with a related control circuit to implement overcurrent and short-circuit protection functions.
In order to further understand the power switching control circuit 10 of the present embodiment, a detailed description is provided below with respect to a specific embodiment.
As shown in fig. 4, fig. 4 is a topology structure of a power switching control circuit 10 according to an embodiment of the present application, which specifically includes: the input source is a high-voltage direct-current source, the main control unit 100 is an on-off control switch Q1, the sub control units are control switches Q2, Q3, Q4, Q5 and Q6, and the loads are R1, R2, R3, R4 and R5. The Q1 includes a control terminal G1, and the control terminal G1 is used for controlling the on/off of the on/off control switch Q1. The sub-control unit control switches Q2, Q3, Q4, Q5 and Q6 respectively comprise control terminals G2, G3, G4, G5 and G6 and are used for controlling the on and off of Q2, Q3, Q4, Q5 and Q6.
Specifically, the high-voltage direct current source can provide power input for the power switching control circuit, the positive electrode J1 of the high-voltage direct current source is connected with the collector of the on-off control switch IGBT, and the negative electrode J2 of the high-voltage direct current source is respectively connected with the first ends of loads R1, R2, R3, R4 and R5; the emitter of the on-off control switch IGBT is respectively connected with the anodes of the control switches Q2, Q3, Q4, Q5 and Q6; cathodes of the control switches Q2, Q3, Q4, Q5 and Q6 are respectively connected with second ends of loads R1, R2, R3, R4 and R5.
When the polarity of the high-voltage direct current source is correct, the control signal is applied to the control end G1 of the Q1, so that the Q1 can be in an on state, the energy and the power of the high-voltage direct current source can be transmitted to the sub-control unit, when the main control unit Q1 is in an on state, the control signals are applied to the control ends G2, G3, G4, G5 and G6 of the sub-control unit control switches Q2, Q3, Q4, Q5 and Q6, so that the transmission and the distribution of the input power to the rear-stage load end can be realized, and similarly, the control signal is applied to the control end G1 of the Q1, so that the main control unit Q1 can be in an off state, and the transmission of the input power to the rear-stage load is cut off.
In summary, the on-off switch of the main control unit in the embodiment of the present application may be an IGBT, and since the IGBT does not have the problem of switch life, the reliability is higher, and the sub-control unit control switch is composed of a unidirectional thyristor, and since the unidirectional thyristor can bear a relatively high blocking voltage in both forward and reverse directions, the problem of system operation abnormality caused by reverse connection of the positive and negative electrodes of the direct current input source can be effectively solved; compared with the mode of using an electromagnetic relay in the related art, the cost is greatly reduced.
According to the power switching control circuit provided by the embodiment of the application, the main control unit is composed of the on-off control switch, each sub-control unit of the first to the Nth sub-control units is composed of the semiconductor switches, the problem that contact damage is caused and the service life of the relay is reduced due to the fact that an electromagnetic relay is adopted in the related technology, the phenomenon that arc is drawn instantly when the electromagnetic relay is switched on and off is effectively solved, the service life of the power switching control circuit is greatly prolonged, the capability of resisting instant surge current is improved, meanwhile, the semiconductor device is adopted, the overvoltage, overcurrent and overtemperature protection functions of the circuit can be realized by applying a control signal to a gate pole of the semiconductor device, and the cost can be greatly reduced.
In the description herein, reference to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or N embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present application, "N" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
Any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more N executable instructions for implementing steps of a custom logic function or process, and alternate implementations are included within the scope of the preferred embodiment of the present application in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of implementing the embodiments of the present application.
The logic and/or steps represented in the flowcharts or otherwise described herein, e.g., an ordered listing of executable instructions that can be considered to implement logical functions, can be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions. For the purposes of this description, a "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of the computer-readable medium would include the following: an electrical connection (electronic device) having one or N wires, a portable computer diskette (magnetic device), a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). Additionally, the computer-readable medium could even be paper or another suitable medium upon which the program is printed, as the program can be electronically captured, via for instance optical scanning of the paper or other medium, then compiled, interpreted or otherwise processed in a suitable manner if necessary, and then stored in a computer memory.
It should be understood that portions of the present application may be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, the N steps or methods may be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system. If implemented in hardware, as in another embodiment, any one or combination of the following techniques, which are known in the art, may be used: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application specific integrated circuit having an appropriate combinational logic gate circuit, a Programmable Gate Array (PGA), a Field Programmable Gate Array (FPGA), or the like.
It will be understood by those skilled in the art that all or part of the steps carried by the method for implementing the above embodiments may be implemented by hardware related to instructions of a program, which may be stored in a computer readable storage medium, and when the program is executed, the program includes one or a combination of the steps of the method embodiments.
In addition, functional units in the embodiments of the present application may be integrated into one processing module, or each unit may exist alone physically, or two or more units are integrated into one module. The integrated module can be realized in a hardware mode, and can also be realized in a software functional module mode. The integrated module, if implemented in the form of a software functional module and sold or used as a stand-alone product, may also be stored in a computer readable storage medium.
The storage medium mentioned above may be a read-only memory, a magnetic or optical disk, etc. Although embodiments of the present application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present application, and that variations, modifications, substitutions and alterations may be made to the above embodiments by those of ordinary skill in the art within the scope of the present application.
Claims (9)
1. A power switching control circuit for use in a dc-dc power control system, wherein the circuit comprises:
the main control unit consists of an on-off control switch, wherein the input end of the main control unit is connected with an input source;
the power supply comprises a first sub control unit, a second sub control unit, a third sub control unit, a fourth sub control unit, a fifth sub control unit, a sixth sub control unit, a seventh sub control unit, a sixth.
2. The circuit of claim 1, wherein the main control unit and the first to nth sub-control units each have a control terminal to control the main control unit and/or the sub-control units to be turned off or on according to an input signal of the circuit.
3. The circuit according to claim 2, wherein the input signal is a preset level signal or a Pulse Width Modulation (PWM) signal, so that the main control unit generates the control signal of each sub-control unit according to the preset level signal or the PWM signal to control the conduction time and/or the conduction frequency of each sub-control unit.
4. The circuit of claim 1, wherein the on-off control switch is any one of a transistor made of silicon material, an IGBT, an IGCT, a GCT, an IEGT, a MOSFET, and a HEMT.
5. The circuit of claim 1, wherein the semiconductor switch is a half-controlled device or a fully-controlled device comprising one or more of a unidirectional thyristor, a bidirectional thyristor, a gate turn-off thyristor, a GCT, and an IGCT.
6. The circuit of claim 5, wherein the fully controlled device comprises one or more of an IGBT, an IEGT, a MOSFET, and a HEMT.
7. The circuit of claim 1, further comprising:
and the distribution module is used for determining the N according to the power distribution mode of the load, and is connected with each sub-control unit.
8. The circuit of claim 1, wherein the main control unit is provided with a limiting element to limit voltage spikes within a preset range.
9. The circuit of claim 1, further comprising:
at least one signal acquisition element connected in series with the master control unit.
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| CN202021476319.9U CN212935767U (en) | 2020-07-23 | 2020-07-23 | Power switching control circuit |
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| CN113972813A (en) * | 2020-07-23 | 2022-01-25 | 深圳市鹏源电子有限公司 | Power switching control circuit |
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| CN113972813A (en) * | 2020-07-23 | 2022-01-25 | 深圳市鹏源电子有限公司 | Power switching control circuit |
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