CN212895082U - Crucible for growth of large-size kilogram-level silicon carbide single crystal - Google Patents
Crucible for growth of large-size kilogram-level silicon carbide single crystal Download PDFInfo
- Publication number
- CN212895082U CN212895082U CN202020782967.0U CN202020782967U CN212895082U CN 212895082 U CN212895082 U CN 212895082U CN 202020782967 U CN202020782967 U CN 202020782967U CN 212895082 U CN212895082 U CN 212895082U
- Authority
- CN
- China
- Prior art keywords
- crucible
- silicon carbide
- kilogram
- single crystal
- carbide single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a jumbo size kilogram level crucible for silicon carbide single crystal growth, including crucible cover and the crucible body, the crucible cover is connected with the seed crystal, and the crucible body is the silicon carbide single crystal growth cavity. To the problem that exists among the prior art, the utility model discloses a traditional silicon carbide crystal crucible for growth can not solve jumbo size, kilogram level, high-quality problem simultaneously, provides a novel round platform dress lateral wall trompil crucible.
Description
Technical Field
The utility model relates to a carborundum single crystal preparation field, concretely relates to jumbo size kilogram level crucible for carborundum single crystal growth.
Background
The silicon carbide single crystal has unique properties of large forbidden bandwidth, high breakdown electric field, large thermal conductivity, small dielectric constant, stable physical and chemical properties and the like, and is considered as an ideal semiconductor material for manufacturing high-temperature, high-voltage, high-frequency and high-power devices and the like. Since silicon carbide crystals are too costly to limit their practical application, an effective way to reduce the cost of the crystals is to enlarge the size and length of the crystals.
The silicon carbide single crystal growth methods currently used commercially are mainly classified into a physical vapor transport method (PVT) and a high temperature chemical vapor deposition method (HTCVD), and both use a cylindrical crucible.
Physical Vapor Transport (PVT) uses a closed cylindrical crucible. Solid silicon carbide powder is used as a raw material, a certain amount of powder is placed in a closed crucible, and then a cylindrical crucible is placed in a high-temperature vacuum heating cavity for growth. The length of PVT growing silicon carbide crystal is limited because the amount of powder is fixed and the crucible cannot be fed during the growth process.
The High Temperature Chemical Vapor Deposition (HTCVD) method uses a cylindrical crucible having upper and lower openings. Gas as a raw material enters from an opening at the bottom of the cylindrical crucible, deposits on the surface of the seed crystal to grow crystals at a specific growth temperature and pressure, and residual gas flows out through a pore at the top of the cylindrical crucible. Although the method can continuously feed materials into the crucible in the growth process, because the gas outlet hole of the crucible is positioned at the growth position of the top crystal, all gases in the growth process, including residual incompletely-reacted gases, hydrogen generated after chemical reaction and carrier gas, are discharged out of the crucible through the top gas hole, namely beside the crystal due to the buoyancy effect, and disturbance is caused to the crystal growth interface, especially etching gases (such as hydrogen) in the chemical reaction process have strong etching effect on the grown silicon carbide crystal under the high-temperature environment, especially on the crystal edge with the largest gas flow rate, and finally the diameter of the grown crystal is smaller than that of the seed crystal, namely the growth of the large-size silicon carbide crystal is difficult to realize.
The existing cylindrical crucible, whether closed or opened up and down, can not satisfy the growth of large-size kilogram-level silicon carbide crystals at the same time. How to design a crucible capable of preparing large-size kilogram-level silicon carbide crystals in actual production, increase the output and reduce the cost is a technical problem which needs to be solved urgently in the technical field.
SUMMERY OF THE UTILITY MODEL
To the problem that exists among the prior art, the utility model aims to provide a brand-new round platform type lateral wall trompil crucible can effectively solve the growth of silicon carbide crystal and can not reach jumbo size, kilogram level, high-quality technical problem simultaneously.
In order to achieve the above object, the utility model provides a jumbo size kilogram level crucible for silicon carbide single crystal, wherein, this crucible includes crucible cover and the crucible body, crucible cover is connected with the seed crystal, and the crucible body is the silicon carbide single crystal growth cavity.
Furthermore, the crucible cover is provided with no opening and is 5-40 mm thick, and the crucible cover is connected with the crucible body in a threaded manner, a clamping groove and a nut.
Furthermore, the crucible body is in a round table shape and is hollow.
Further, the side wall of the crucible body is 5-30 mm thick, and the bottom of the crucible body is 5-40 mm thick
Further, the included angle between the side wall of the crucible and the bottom is 45-85 degrees.
Furthermore, a hole is formed in the center of the bottom of the crucible, and the size of the hole is 5-30 mm.
Furthermore, an air hole is reserved in the side wall of the crucible, and the distance between the position of the air hole and the upper edge of the crucible body is 1-10 mm.
Furthermore, the diameter of the side wall air hole is 0.5-10 mm.
Further, the row number of the side wall air holes is 1-10 rows, the distance between every two rows is 1-10 mm, the number of each air vent is 1-10, and the distribution of each air vent is uniform and axisymmetric.
Furthermore, the exhaust hole of the crucible is plated with a high-temperature-resistant corrosion-resistant coating comprising tantalum carbide and tungsten carbide, and the thickness of the coating is 1-500 mu m.
The utility model can continuously supply and collect gas raw materials in the crystal growth process by opening the bottom of the circular truncated cone-shaped crucible, thereby ensuring the possibility of the growth of kilogram-grade silicon carbide crystals; in order to solve the problem of etching the crystal growth by etching gas, the exhaust holes are arranged on the side wall of the graphite crucible instead of the top, so that the crystal can be prevented from being etched by the gas through different sizes, quantities and gaps; and the crucible structure is designed into a truncated cone shape, so that the diameter of the crystal is expanded and grown, the problem that the diameter of the grown crystal is difficult to be larger than that of the seed crystal is solved, and the growth and use of large-size kilogram-level silicon carbide crystals are met.
Drawings
FIG. 1 is a schematic view of the crucible structure and crystal growth of the present invention
Description of the reference numerals
1. Quartz tube
2. Induction coil
3. Crucible cover
4. Seed crystal
5. Thermal insulation felt
6. Exhaust hole on side wall of crucible
7. Grown crystal
8. Cone shaped crucible
9. Crucible bottom
10. Crucible air inlet
Detailed Description
In the present invention, the "upper, lower, left and right" refer to directions based on the front view of the crucible.
As shown in figure 1, the utility model discloses in, provide jumbo size kilogram level crucible for silicon carbide single crystal, wherein, this crucible includes crucible cover and the crucible body, crucible cover is connected with the seed crystal, and the crucible body is the silicon carbide single crystal growth cavity.
The utility model discloses in the crucible lid does not have the trompil, and 5~40mm is thick, is screw thread, draw-in groove, nut with crucible body connected mode. In the using process, seed crystals are fixed on the crucible cover, the seed crystals are high-quality silicon carbide substrates, and the fixing mode is bonding or clamping rings; the traditional bonding mode needs heat treatment, so that the preparation process is long, the cost is high, the crystal taking process is complicated after the crystal growth is finished, and the risk of damaging the crystal is caused; preferably, snap ring fixation is advantageous.
The utility model discloses in, the crucible body is round platform form, cavity, and crucible body lateral wall is thick 5~30mm, end thick 5~40mm, the crucible lateral wall is 45~85 with the contained angle of bottom. The crucible material generally is graphite or tantalum carbide, for preventing the crucible inner wall to corrode in the crystal growth process when selecting graphite crucible, preferably, the crucible inner wall has plated high temperature resistant coating, including tantalum carbide, tungsten carbide.
The utility model discloses in, the central trompil in crucible bottom, size 5~30 mm. In the crystal growth process, raw material gas and carrier gas are introduced from an opening at the bottom of the crucible; the raw material gas is SiH4And CmHnThe purity is 4N-7N; hydrogen (H) is preferred2) Or helium (He) gas is used as carrier gas, has small molecular weight, does not participate in chemical reaction, and has the purity of 4N-7N; further, helium (He) is preferable, which is non-etching and is comparable to hydrogen (H)2) Has better effect.
The utility model discloses in, the gas pocket is left to the lateral wall on the crucible, the position distance crucible body top edge 1~10mm of gas pocket. The diameter of the side wall air hole is 0.5-10 mm. The number of rows of side wall air holes is 1~10 rows, and the interval between every row is 1~10mm, and the quantity in every exhaust hole is 1~10, and the distribution in every exhaust hole is even axisymmetric. During the crystal growth process, the reaction byproduct gas and the incompletely reacted raw material gas are exhausted through the exhaust holes on the side wall of the crucible under the carrying of the carrier gas. In order to prevent gas from corroding the exhaust holes, the exhaust holes are plated with a high-temperature-resistant corrosion-resistant coating comprising tantalum carbide and tungsten carbide, and the thickness of the coating is 1-500 mu m.
The utility model discloses in, the crucible uses in crystal growth process, in the use crucible outer wall parcel insulation material, insulation material is high temperature resistant not less than 2600 ℃, preferably, graphite felt is chooseed for use in the preparation of silicon carbide crystal.
The utility model discloses in, the crucible uses in the crystal growth process, preferably, will the crucible is arranged in the single crystal growing furnace, the single crystal growing furnace is intermediate frequency induction heating system, and further preferred built-in quartz capsule is as reaction cavity.
The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited thereto. In the technical idea scope of the present invention, it can be right to the technical solution of the present invention perform multiple simple modifications, including each technical feature combined in any other suitable manner, these simple modifications and combinations should be regarded as the disclosed content of the present invention, and all belong to the protection scope of the present invention.
Claims (10)
1. The crucible for the growth of the large-size kilogram-level silicon carbide single crystal is characterized by comprising a crucible cover and a crucible body, wherein the crucible cover is connected with seed crystals, a hole is formed in the center of the bottom of the crucible, an air hole is reserved in the side wall of the crucible, and the crucible body is a silicon carbide single crystal growth cavity.
2. A crucible for growing large-size kilogram-scale silicon carbide single crystals as claimed in claim 1, wherein the crucible cover has no opening and is 5-40 mm thick, and the crucible cover is connected with the crucible body by a screw thread, a clamping groove or a nut.
3. A crucible for growing a large-size kilogram-scale silicon carbide single crystal according to claim 1, wherein the crucible body is truncated cone-shaped and hollow.
4. A crucible for growing a large-size kilogram-scale silicon carbide single crystal according to claim 1, wherein the thickness of the side wall of the crucible body is 5-30 mm, and the thickness of the bottom of the crucible body is 5-40 mm.
5. A crucible for growing a large-size kilogram-scale silicon carbide single crystal according to claim 1, wherein the angle between the side wall and the bottom of the crucible is 45-85 °.
6. A crucible for growing a large-size kilogram-scale silicon carbide single crystal according to claim 1, wherein the bottom of the crucible is provided with a central opening with a size of 5-30 mm.
7. A crucible for growing a large-size kilogram-scale silicon carbide single crystal according to claim 1, wherein the upper side wall of the crucible is provided with air holes, and the positions of the air holes are 1-10 mm away from the upper edge of the crucible body.
8. A crucible for growing a large-sized kilogram-scale silicon carbide single crystal according to claim 1, wherein the diameter of the pores in the side wall is 0.5 to 10 mm.
9. A crucible for growing a large-sized kilogram-scale silicon carbide single crystal according to claim 1, wherein the number of rows of air holes on the side wall is 1-10, the distance between each row is 1-10 mm, the number of each air vent is 1-10, and the distribution of each air vent is uniform and axisymmetric.
10. A crucible for growing large-size kilogram-scale silicon carbide single crystals as claimed in claim 1, wherein the exhaust hole of the crucible is plated with a high-temperature-resistant and corrosion-resistant coating comprising tantalum carbide or tungsten carbide, and the thickness of the coating is 1-500 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020782967.0U CN212895082U (en) | 2020-05-12 | 2020-05-12 | Crucible for growth of large-size kilogram-level silicon carbide single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020782967.0U CN212895082U (en) | 2020-05-12 | 2020-05-12 | Crucible for growth of large-size kilogram-level silicon carbide single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212895082U true CN212895082U (en) | 2021-04-06 |
Family
ID=75263387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020782967.0U Active CN212895082U (en) | 2020-05-12 | 2020-05-12 | Crucible for growth of large-size kilogram-level silicon carbide single crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212895082U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117867648A (en) * | 2024-01-03 | 2024-04-12 | 杭州乾晶半导体有限公司 | Silicon carbide crystal expanding growth device and silicon carbide crystal expanding growth method |
-
2020
- 2020-05-12 CN CN202020782967.0U patent/CN212895082U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117867648A (en) * | 2024-01-03 | 2024-04-12 | 杭州乾晶半导体有限公司 | Silicon carbide crystal expanding growth device and silicon carbide crystal expanding growth method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111424319B (en) | Preparation method of large-size kilogram-level silicon carbide single crystal | |
| KR930011998B1 (en) | Reactor system and method for forming uniformy large diameter polycrystalline rods by the pyrolysis of silane | |
| CN100414004C (en) | Device and method for producing single crystals by vapor deposition | |
| US9487873B2 (en) | Conical graphite electrode with raised edge | |
| JP2016033112A (en) | Method for producing polycrystalline silicon | |
| JP2008531461A (en) | Reactor and method for preparing silicon | |
| EP2489634B1 (en) | Core wire holder for producing polycrystalline silicon and method for producing polycrystalline silicon | |
| CN115821372A (en) | Crystal growing device | |
| CN214830783U (en) | Crucible structure for growing silicon carbide single crystal | |
| CN212895082U (en) | Crucible for growth of large-size kilogram-level silicon carbide single crystal | |
| CN102586856A (en) | Crucible capable of improving utilization rate of silicon ingot and using frequency of seed crystal and preparation method of crucible | |
| CN113249791A (en) | Graphite crucible for growing silicon carbide single crystal capable of adjusting carbon-silicon ratio in growth atmosphere | |
| KR20140110266A (en) | An apparatus and method for growing silicon carbide single crystal | |
| WO2012101969A1 (en) | Reactor for manufacturing polycrystalline silicon and method for manufacturing polycrystalline silicon | |
| CN218621129U (en) | Crucible structure and crystal growth apparatus | |
| TW201928132A (en) | Device for growing carbides of a specific shape capable of effectively controlling the shape and size of the carbides and increasing the deposition surface area | |
| JP2018530511A (en) | Reactor for depositing polycrystalline silicon | |
| CN213951415U (en) | Substrate table for growing single crystal diamond by microwave plasma technology | |
| CN216863655U (en) | Silane thermal decomposition furnace capable of promoting uniform and compact deposition of zone-melting-level polycrystalline silicon | |
| JP2003086516A (en) | Susceptor, cvd unit, film-forming method and semiconductor device | |
| CN104411864A (en) | Manufacturing apparatus for depositing a material and a socket for use therein | |
| CN109928396A (en) | Gas distributor and including it for polycrystalline silicon deposition reactor | |
| JP2003306398A (en) | Process and apparatus for preparing silicon carbide single crystal | |
| CN111321462A (en) | Substrate table for growing single crystal diamond by microwave plasma technology | |
| CN111676466A (en) | A water conservancy diversion formula sample holds in palm and system for MPCVD system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |