CN212894948U - Rotary target and magnetron sputtering device - Google Patents
Rotary target and magnetron sputtering device Download PDFInfo
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- CN212894948U CN212894948U CN202020701972.4U CN202020701972U CN212894948U CN 212894948 U CN212894948 U CN 212894948U CN 202020701972 U CN202020701972 U CN 202020701972U CN 212894948 U CN212894948 U CN 212894948U
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Abstract
The utility model provides a rotatory target and magnetron sputtering device. The rotary target comprises a back tube, a magnetic core arranged in the back tube and a target material enclosed outside the back tube, the target material comprises a back plating part and a target material main body part, the back plating part corresponds to a region where impurities are gathered when the target material is used, and the back plating part is positioned at two end parts of the target material main body part in the length direction; the size of the side outer contour of the back plating part is smaller than that of the target main body part. The utility model discloses can alleviate the degree of rotatory target impurity gathering, prolong the life of rotatory target, reduce the number of times that the coating process was interrupted, make equipment utilization rate rise.
Description
Technical Field
The utility model relates to a magnetron sputtering target technical field especially relates to a rotatory target and magnetron sputtering device.
Background
As an important technology in the current industrial coating production process, magnetron sputtering has the characteristics of low temperature, high speed, high compactness of a film layer, excellent uniformity and the like, and plays an important role in the fields of optics, plane display, integrated circuits and the like.
Magnetron sputtering utilizes the collision of electrons generated by an electric field with process gas in a high vacuum environment to generate plasma, and the plasma bombards a cathode target material to enable target material atoms to be separated from the original position, thereby achieving the purpose of depositing a film layer. In practical production, the rotating target generally comprises a backing tube and a target wound around the outside of the backing tube, a magnetic core is arranged inside the backing tube, and the length of the magnetic core is usually smaller than the actual length of the target. In other words, the magnetic core does not extend to the two end positions of the target, so the magnetic field strength at the two end positions of the target is generally smaller than that at the middle position of the target. This can lead to two unbalanced processes of "sputtering out" and "back plating" of target atoms at two end positions of the target, so under the effect of long-term discharge, the end positions of the target can form nodules, which leads to abnormal discharge and also affects the film quality of the sputtered film. To avoid this, the prior art generally opens the working chamber of the device after a period of use and cleans the nodule before continuing the operation.
However, in the above solution, the chamber needs to be opened for cleaning at regular time during the coating process, so that the coating process is frequently interrupted, which directly results in low equipment utilization rate and low productivity.
SUMMERY OF THE UTILITY MODEL
The utility model provides a rotatory target and magnetron sputtering device can alleviate impurity gathering, reduces the number of times that the coating film process was interrupted, improve equipment's the rate of utilization.
In a first aspect, the present invention provides a rotary target, including a back tube, a magnetic core disposed in the back tube, and a target material surrounding the back tube, wherein the target material includes a back-plating part and a target material main body part, the back-plating part corresponds to an area where impurities will gather when the target material is used, and the back-plating part is located at two end parts of the target material main body part in the length direction; the size of the side outer contour of the back plating part is smaller than that of the target main body part.
In one possible implementation manner, the plating back part comprises a first end facing the target main body part and a second end facing away from the target main body part, and the size of the lateral outer contour of the plating back part is gradually reduced from the first end of the plating back part to the second end of the plating back part.
In one possible implementation, the outer side surface of the back plating part is a slope inclined relative to the axis of the back tube.
In one possible implementation manner, the included angle range of the outer side surface of the back plating part relative to the axis of the back tube is as follows: 15-32 degrees.
In one possible implementation, the thickness of the back-plated portion decreases gradually from the first end toward the second end.
In one possible implementation manner, the main body portion includes a plurality of target embryos, and the plurality of target embryos are arranged around the outer side of the back tube and are arranged at intervals along the axial direction of the back tube.
In one possible realization, two target embryos adjacent to each other in the axial direction of the back tube are spaced from each other by 0.20 to 0.40 mm.
In one possible implementation, the surface roughness Ra of the outer surface of the back-plating zone is 1.0-2.0 um.
In one possible embodiment, the second end face of the back-plated part is perpendicular to the axis of the back tube.
In a second aspect, the present invention provides a magnetron sputtering apparatus, including the above-mentioned rotary target.
The embodiment of the utility model provides a rotatory target includes the back of the body pipe, sets up the magnetic core in the back of the body pipe and encloses the target that sets up in the back of the body pipe outside, and the target includes back plating portion and target main part, and back plating portion will produce the region that the impurity gathers when corresponding to the target use, and back plating portion is located the length direction both ends of target main part; the size of the side outer contour of the back plating part is smaller than that of the target main body part. By arranging the back-plating part in the rotary target, the back-plating part is a region where the impurities are to be gathered, and because the size of the outer contour of the back-plating part is smaller than that of the main body part of the target, compared with the scheme that the sizes of the outer contours of the back-plating part and the main body part of the target are equal in the prior art, the distance between the size of the outer contour of the back-plating part and the inner magnetic core is smaller, the magnetic field intensity value of the target material on the outer surface of the back-plating part is larger, the number of atoms of the target material bombarded and separated from the surface of the back-plating part is larger, and the difference between the number of atoms of the back-plating part. Therefore, the service life of the rotary target is prolonged, the times of interruption of the film coating process are reduced, and the utilization rate of the equipment is increased.
Drawings
In order to illustrate the technical solutions of the present invention or the prior art more clearly, the drawings needed for the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive labor.
Fig. 1 is a schematic cross-sectional view of a rotary target according to a first embodiment of the present invention;
fig. 2 is a schematic structural view of a rotary target according to a first embodiment of the present invention;
fig. 3 is a schematic structural diagram of another structure of a rotary target according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of another structure of a rotary target according to an embodiment of the present invention;
fig. 5a is a schematic diagram illustrating a result of a comparison test between a rotary target provided in an embodiment of the present invention and a rotary target of the prior art;
fig. 5b is a schematic diagram illustrating a result of a comparison test between a rotary target provided in an embodiment of the present invention and a rotary target of the prior art;
fig. 6 is a schematic diagram of the relationship between the target lifetime and the length of the target.
Reference numerals:
100-rotating the target material;
10-back tube;
11-a magnetic core;
20-a target material;
30-a plating back part;
31-a first end;
32-a second end;
50-a target body portion;
51-target embryo.
Detailed Description
To make the objects, technical solutions and advantages of the present invention clearer, the drawings of the present invention are combined to clearly and completely describe the technical solutions of the present invention, and obviously, the described embodiments are some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
Example one
Fig. 1 is a schematic sectional view of a rotary target according to a first embodiment of the present invention, fig. 2 is a schematic structural view of a rotary target according to a first embodiment of the present invention, and fig. 3 is a schematic structural view of another structure of a rotary target according to a first embodiment of the present invention.
Referring to fig. 1 and 2, a rotary target 100 provided in this embodiment of the present application includes a backing tube 10, a magnetic core 11 disposed in the backing tube 10, and a target 20 disposed around the backing tube 10, the target 20 includes a back-plating part 30 and a target main body 50, the back-plating part 30 corresponds to a region where impurities will be collected when the target 20 is used, and the back-plating parts 30 are located at two longitudinal ends of the target main body 50; the outer dimension of the outer surface of the back-plating section 30 in the axial direction O of the backing tube 10 is smaller than the outer dimension of the outer surface of the target main body section 50 in the axial direction O of the backing tube 10. That is, the size of the lateral outer contour of the return plating section 30 is smaller than the size of the lateral outer contour of the target main body section 50.
In the embodiment of the present application, the term "impurity accumulation" specifically refers to a nodule phenomenon generated on a target material during a sputtering process.
In the above-described aspect, the back-plating section 30 is provided in the rotary target 100, and in the present application, the back-plating section 30 refers to a region of the target 20 where the impurity concentration is to occur. The plating back portion 30 may be determined in the following manner: from the empirical values, the maximum region in the target 20 where the impurities are likely to be accumulated is defined as an impurity accumulation region, a portion of the target 20 corresponding to the impurity accumulation region is a back-plating portion 30, and the impurity accumulation (nodules) is a structure in which target atoms, impurities, and the like bombarded from the surface of the target 20 are back-plated again onto the target 20. The degree of impurity accumulation in the re-plating section 30 can be measured by the difference between the amount of target material atoms re-plated on the re-plating section 30 and the amount of target material 20 atoms bombarded from the surface of the re-plating section 30 within a predetermined time.
Further, referring to fig. 1, since the size of the lateral outer contour of the recoated portion 30 is smaller than the size of the lateral outer contour of the target main body portion 50, compared to the prior art in which the sizes of the outer contours of the recoated portion 30 and the target main body portion 50 are equal, since the distance between the outer surface of the recoated portion 30 and the inner core 11 is smaller (the magnetic field density at the portion closer to the core 11 is larger), the magnetic field intensity value at which the target material is located on the outer surface of the recoated portion 30 is larger, the number of target atoms bombarded and detached from the surface of the recoated portion 30 is larger, and the difference between the number of target atoms is smaller without changing the number of the recoated target atoms, that is, the situation of impurity accumulation. Therefore, the service life of the rotary target 100 is prolonged, the times of interruption of the film coating process are reduced, and the equipment utilization rate is increased.
In the embodiment of the present application, the back pipe 10 is cylindrical, and the material is preferably stainless steel. A stationary magnetic core 11 is enclosed in the back tube 10, wherein the parts of the two ends of the back tube 10 of the magnetic core 11 are typically at a predetermined distance from the back tube 10. The target material 20 is enclosed outside the backing tube 10, and in order to facilitate the installation of the rotary target material 100 and to avoid damage to the target material 20 during installation, the length of the backing tube 10 is generally greater than the length of the target material 20. The parts of the back tube 10 protruding from the target 20 are formed as mounting parts for the rotary target 100, that is, the rotary target 100 is mounted in the working chamber of the magnetron sputtering apparatus through the mounting parts.
In the embodiment of the present application, the target 20 includes the plating back portion 30 and the target main body portion 50, and the plating back portions 30 are located at two longitudinal ends of the target main body portion 50; in the case where the reflow part 30 and the target main body part 50 are of an integral structure, the reflow part 30 and the target main body part 50 are two parts included in one structural member. In the case where the re-plating section 30 and the target main body portion 50 are formed separately, the re-plating section 30 and the target main body portion 50 may be fixed to the corresponding portions of the backing tube 10, respectively. The back plating part 30 and the target main body part 50 may have a space therebetween, and the distance therebetween along the axial direction of the backing tube 10 is 0.20 to 0.40 mm.
In the embodiment of the present application, the size of the lateral outer contour of the re-plating section 30 is smaller than the size of the lateral outer contour of the target main body section 50, and for example, referring to fig. 1 and 2, the outer contour sizes of both the re-plating sections 30 are smaller than the outer contour size of the target main body section 50. The dimension of the lateral outer contour of the re-plating section 30 is smaller than the dimension of the lateral outer contour of the target main body section 50, specifically, the area enclosed by the outer contour of the cross section of the re-plating section 30 is smaller than the area enclosed by the outer contour of the cross section of the target main body section 50, where the cross section is a section perpendicular to the axial direction of the backing tube 10.
Specifically, the size of the lateral outer contour of the back-plating section 30 may be smaller than the size of the lateral outer contour of the target main body section 50 in many cases, and for example, referring to fig. 3, the back-plating section 30 is formed in a circular tube shape and the outer diameter is kept constant in the axial direction of the backing tube 10.
Alternatively, referring to fig. 1 and 2, in a possible implementation, the plating back part 30 includes a first end 31 facing the target main body part 50 and a second end 32 facing away from the target main body part 50, and the size of the lateral outer contour of the plating back part 30 is gradually reduced from the first end 31 of the plating back part 30 to the second end 32 of the plating back part 30.
In the embodiment of the present application, referring to fig. 1, the dotted line is an illustration of the magnetic field generated by the magnetic core 11, and the magnetic field environment of the back-plating part 30 is gradually reduced from the first end 31 to the second end 32, so that the impurity concentration becomes easier as the first end 31 is closer to the second end 32, that is, the second end 32 is less in magnetic field strength, the target atoms are less detached, the impurity concentration is more easily generated, and the thickness of the impurity concentration is thicker. In the above solution, the size of the lateral outer contour of the recoating portion 30 gradually decreases from the first end 31 to the second end 32, that is, the size of the lateral outer contour of the recoating portion 30 decreases as the region is closer to the region where the impurity concentration is more likely to occur, so that the distance from the outer side surface of the recoating portion 30 to the magnetic field decreases, the magnetic field strength increases, and thus the number of atoms bombarded and detached from the target material 20 during sputtering increases, and the difference between the number of atoms to be recoated decreases, that is, the impurity concentration decreases. Therefore, the service life of the rotary target 100 is prolonged, the times of interruption of the film coating process are reduced, and the equipment utilization rate is increased.
In the embodiment of the present application, the target 20 may be a revolving body, so that target atoms on the target 20 can be uniformly detached during the operation of rotating the target 100, which is beneficial to the stable operation of the coating process.
Further, the outer side surface of the plating back part 30 is inclined toward the axis of the back pipe 10 from the first end 31 of the plating back part 30 to the second end 32 of the plating back part 30. In other words, the outer side surface of the back plating section 30 is a slope inclined with respect to the axis O of the back pipe. As described above, the outer side surface of the plating back portion 30 is formed as a continuous inclined surface, and even if the outer contour dimension of the entire plating back portion 30 is continuously reduced, the accumulation of impurities can be further reduced.
In the embodiment of the present application, referring to fig. 2, the range of the included angle α between the outer side surface of the back plating part 30 and the axis O of the back tube 10 is: 15-32 degrees. When the included angle alpha is within the range, the impurity accumulation condition of the back plating part 30 can be ensured to be reduced to the maximum extent.
In the embodiment of the present application, in a possible implementation manner, the end surface of the second end 32 of the back plating part 30 is perpendicular to the axis of the back tube 10. The machining of the back-plated part 30 is typically done by turning and is facilitated by inserting the tool from the second end 32, with the end face of the second end 32 being disposed perpendicular to the axis of the back-tube 10.
In the embodiment of the present application, the thickness of the plating back portion 30 decreases gradually from the first end 31 toward the second end 32. Exemplarily, referring to fig. 1, in a case where the inner diameter of the plating back part 30 is constant, since the outer diameter of the plating back part 30 is gradually reduced from the first end 31 toward the second end 32, the thickness of the plating back part 30 is gradually reduced from the first end 31 toward the second end 32. So as to increase the magnetic field intensity at the position of the outer surface of the back plating part 30 as much as possible.
Further, for a large magnetron sputtering apparatus, a large-sized rotary target 100 is required, and for this purpose, a plurality of target blanks 51 may be prepared and then spliced to the backing tube 10.
Fig. 4 is a schematic structural diagram of another structure of a rotary target according to an embodiment of the present invention, and referring to fig. 4, for example, the main body portion may include a plurality of target blanks 51, and the target blanks 51 are enclosed outside the back tube 10. Specifically, a plurality of independent target embryos 51 may be produced, and then the plurality of target embryos 51 may be fixed to the back tube 10. Each target blank 51 may be welded to the backing tube 10 by, for example, indium brazing.
In one possible implementation manner, the distance d between two adjacent target blanks 51 in the axial direction of the rotating target 100 is 0.20-0.40 mm. Thus, it is possible to prevent the entry of impurities between the two target blanks 51 due to an excessively large gap, and to prevent the occurrence of cracks due to an excessively large stress when the gap is excessively small.
In the embodiment of the application, the surface roughness Ra of the outer surface of the back plating area can be 1.0-2.0 um.
The process of making the rotary target 100 of the present application is briefly described below. The method for preparing the rotary target 100 of the present application includes:
the raw material powder is subjected to mixing, pressing (or slip casting) and high-temperature atmosphere sintering to obtain the target blank 51 with the relative density of not less than 98%. Wherein, it should be noted that the temperature rise rate during sintering is not too fast, preferably 20-300 ℃/h;
the outer peripheral edge of the target blank 51 to be the plating back portion 30 is chamfered, for example, by turning.
Polishing and cleaning the chamfered target blank 51;
the target blanks 51 are welded to the backing tube 10 by indium brazing or the like, and the target blanks 51 are mounted on the backing tube 10. In which the target blanks 51 having the chamfers are placed at both ends, and the target blank 51 positioned at the middle portion is not provided with chamfers. In addition, it should be noted that, during splicing, the distance between two adjacent target blanks 51 is 0.20-0.40 mm, because the distance is too small, the target blanks are easy to crack due to too large stress in the using process; the distance is too large, and foreign matter is likely to accumulate, thereby causing abnormal discharge.
As a further example, referring to fig. 2 and 4, the method for preparing the rotary target 100 includes:
raw material powder In with purity of 99.99% and average particle diameter of 50nm2O3、SnO2According to the following steps of 9: 1, adding 1% of polyvinyl alcohol PVA, and performing ball milling and uniform mixing;
pouring the uniformly mixed powder into a tubular mold with a specified size, and pressing under the pressure of 5-10MPa to obtain a rough blank; then a more uniform and higher-density molded body is obtained through isostatic pressing of 200 and 500 Mpa;
degreasing and sintering the molded body, namely heating to 660-800 ℃ at the speed of 30-60 ℃/h, preserving the temperature for 4 h, and then cooling to room temperature; sintering the blank in oxygen atmosphere at the speed of 100-; it is noted that the target embryo 51 may also be obtained by a grouting technique.
Chamfering the outer peripheral edge of the target blank 20 to be used as the plating back section 30; wherein the height H of the chamfering area (namely the height of the back plating area) ranges from 3 mm to 8mm, and the reduced thickness D of the chamfering area ranges from 2 mm to 6 mm; the included angle alpha between the outer surface of the back plating part 30 and the axis O of the back tube 10 is in the range of 15-32 degrees;
polishing and cleaning the chamfered target blank 51 to ensure that the surface roughness Ra is within the range of 1.0-2.0 um;
the target blank 51 and the backing tube 10 are welded by indium brazing or the like to be joined to form the target material 20 of a desired size. In which the target blanks 51 having chamfers are placed at both ends, and the target blanks 51 positioned at the middle portion do not need to be subjected to the above-described chamfering process. In addition, it should be noted that, during splicing, the distance between two adjacent target embryos 51 is preferably 0.20-0.40 mm.
In order to verify the effect of the rotating target 100 in the present application, the applicant also made experiments.
Fig. 5a is a schematic diagram of a result of a contrast test performed on a rotary target material provided by an embodiment of the present invention and a rotary target material in the prior art, and fig. 5b is a schematic diagram of a result of a contrast test performed on a rotary target material provided by an embodiment of the present invention and a rotary target material in the prior art.
Referring to fig. 5a and 5b, comparing the number of abnormal discharges and the number of foreign matters of the rotary target of the present application and the rotary target of the prior art after the same time, it can be seen that the number of abnormal discharges of the rotary target 100 of the present application is 27, the number of abnormal discharges of the rotary target of the prior art is 75, and the number of abnormal discharges of the rotary target 100 of the present application is only 36% of the prior art when the rotary target of the present application and the rotary target of the prior art are used to the same life stage.
In addition, the particles on the surface of the product are measured by using an appearance inspection device (automatic optical inspection device AOI, with a detection accuracy of 4um), and referring to fig. 5b, the number of particles generated on the coated substrate by the rotating target 100 (i.e. the number of foreign matters in fig. 5 b) is reduced by 35% (183 → 116 particles/substrate) compared with the prior art target, and the service life of the film forming chamber of the magnetron sputtering device can be increased from 800kWh to 1600 kWh.
In the embodiment of the present application, the target 20 is modularly designed according to the strength of the magnetic field at the two ends of the rotary target 100, the target 20 is divided into the target main body portion 50 and the plating back portion 30, and the outer dimension of the outer side surface of the plating back portion 30 is reduced to strengthen the magnetic field strength of the outer side surface of the plating back portion 30, so as to compensate the imbalance between the two processes of "sputtering" and "plating back" of target atoms, weaken the "plating back region", and reduce the accumulation of impurities and impurities. Further, the above-described structure in which the outer dimension of the back plating section 30 is reduced does not affect the uniformity of the film quality.
FIG. 6 is a graph showing the relationship between the lifetime of the target and the axial length of the target along the backing tube.
As shown in fig. 6, the relationship between the service life of the rotating target and the length of the impurity accumulation region is shown in the graph, and the service life of the rotating target and the length of the impurity accumulation region have a positive correlation.
In this embodiment, the rotary target includes a back tube, a magnetic core disposed in the back tube, and a target material surrounding the back tube, the target material includes a back-plating portion and a target material main body portion, the back-plating portion corresponds to a region where impurities will be gathered when the target material is used, and the back-plating portion is located at two end portions of the target material main body portion in the length direction; the outer contour dimension of the outer side surface of the back plating part is smaller than that of the outer side surface of the target main body part. The back-plating part is arranged in the rotary target and is a region where impurity aggregation is to be generated, and the outer contour dimension of the outer side surface of the back-plating part along the axial direction of the back tube is smaller than the outer contour dimension of the outer side surface of the target main body part along the axial direction of the back tube. Therefore, the service life of the rotary target is prolonged, the times of interruption of the film coating process are reduced, and the utilization rate of the equipment is increased.
Example two
The present embodiment provides a magnetron sputtering apparatus including the rotating target of the first embodiment. The specific structure and function of the rotating target have been described in detail in the first embodiment, and thus are not described herein again.
In this embodiment, the magnetron sputtering apparatus includes the above-mentioned rotary target, and the back-plating part is provided in the rotary target, and the back-plating part is a region where the impurities are to be gathered, and since the outer profile dimension of the outer side surface of the back-plating part is smaller than the outer profile dimension of the outer side surface of the main body part of the target, compared with the scheme in the prior art in which the outer profile dimensions of the back-plating part and the main body part of the target are equal, since the distance from the outer side surface of the back-plating part to the internal magnetic core is smaller, the magnetic field strength value at which the target material is located on the outer surface of the back-plating part is larger, the number of atoms of the target bombarded and detached from the surface of the back-plating part. Therefore, the service life of the rotary target is prolonged, the times of interruption of the film coating process are reduced, and the utilization rate of the equipment is increased.
In the description of the present invention, it is to be understood that the terms "center", "length", "width", "thickness", "top", "bottom", "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "inner", "outer", "axial", "circumferential", and the like, which are used to indicate the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplification of the description, and do not indicate or imply that the position or element referred to must have a particular orientation, be of particular construction and operation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally formed; may be mechanically coupled, may be electrically coupled or may be in communication with each other; either directly or indirectly through intervening media, such as through internal communication or through an interaction between two elements. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the present disclosure, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact between the first and second features, or may comprise contact between the first and second features not directly. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is at a lesser elevation than the second feature.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention.
Claims (10)
1. A rotary target is characterized by comprising a back tube, a magnetic core arranged in the back tube and a target material enclosed outside the back tube, wherein the target material comprises a back plating part and a target material main body part, the back plating part corresponds to a region where impurities are gathered when the target material is used, and the back plating part is positioned at two end parts of the target material main body part in the length direction; the size of the side outer contour of the back plating part is smaller than that of the target main body part.
2. The rotary target according to claim 1, wherein the re-plating section comprises a first end facing the target body portion and a second end facing away from the target body portion, and wherein a lateral outer contour of the re-plating section decreases in size from the first end of the re-plating section to the second end of the re-plating section.
3. The rotary target according to claim 2, wherein the outer side surface of the back plating section is a slope inclined with respect to the axis of the backing tube.
4. The rotary target according to claim 3, wherein the outer side surface of the back plating part has an included angle range with respect to the axis of the backing tube: 15-32 degrees.
5. The rotary target according to claim 1, wherein the thickness of the re-plating section decreases gradually from the first end of the re-plating section towards the second end of the re-plating section.
6. The rotary target according to any one of claims 1 to 5, wherein the main body comprises a plurality of target blanks, and the plurality of target blanks are arranged around the outer side of the backing tube and are spaced apart from each other in the axial direction of the backing tube.
7. The rotary target material according to claim 6, wherein the distance between two adjacent target blanks in the axial direction of the backing tube is 0.20-0.40 mm.
8. The rotary target according to any one of claims 1 to 5, wherein the outer surface of the back-plating zone has a surface roughness Ra of 1.0-2.0 um.
9. The rotary target according to any one of claims 1 to 5, wherein the second end face of the back-plating part is perpendicular to the axis of the backing tube.
10. A magnetron sputtering apparatus comprising the rotary target according to any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020701972.4U CN212894948U (en) | 2020-04-30 | 2020-04-30 | Rotary target and magnetron sputtering device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020701972.4U CN212894948U (en) | 2020-04-30 | 2020-04-30 | Rotary target and magnetron sputtering device |
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| CN212894948U true CN212894948U (en) | 2021-04-06 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113718215A (en) * | 2021-08-19 | 2021-11-30 | 深圳市华星光电半导体显示技术有限公司 | Magnetron sputtering device |
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2020
- 2020-04-30 CN CN202020701972.4U patent/CN212894948U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113718215A (en) * | 2021-08-19 | 2021-11-30 | 深圳市华星光电半导体显示技术有限公司 | Magnetron sputtering device |
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