CN212850435U - Active inductance Q value enhancement module of band-pass filter - Google Patents
Active inductance Q value enhancement module of band-pass filter Download PDFInfo
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- CN212850435U CN212850435U CN202021679251.4U CN202021679251U CN212850435U CN 212850435 U CN212850435 U CN 212850435U CN 202021679251 U CN202021679251 U CN 202021679251U CN 212850435 U CN212850435 U CN 212850435U
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Abstract
The utility model discloses a band-pass filter active inductance Q value reinforcing module, include: the circuit comprises a first input unit, a second input unit, a first active inductance unit, a second active inductance unit, a negative resistance unit, a first output unit and a second output unit; the first input unit is electrically connected with the first active inductance unit, the first active inductance unit is electrically connected with the negative resistance unit and the first output unit respectively, the negative resistance unit is electrically connected with the second active inductance unit and the second output unit respectively, and the second active inductance unit is electrically connected with the second input unit. The utility model discloses an adjust the bias condition of active inductance and active negative resistance circuit, can effectively increase the Q value of wave filter, have high Q value, can harmonious and do benefit to integrated advantage.
Description
Technical Field
The utility model relates to a wave filter technical field especially relates to a band-pass filter active inductance Q value reinforcing module.
Background
In recent years, with the development of wireless communication systems, the design of integrated circuits is gradually advancing toward low cost, low power consumption and high integration. With increasing levels of technology, however, bandpass filters operating at high frequencies are always the most difficult modules to integrate. Conventional rf bandpass filters are typically implemented with lumped LC elements, dielectric or surface acoustic wave filters (SAW). Among them, the SAW is widely used due to its advantages of small area and low power consumption. However, SAW is not compatible with silicon technology, making integration difficult, limiting its application to integrated circuits. The presence of a monolithic spiral inductor makes it possible to integrate a radio frequency band-pass filter on a silicon substrate. However, the band-pass filter formed by using the spiral inductor has a very low pass-band center frequency and a large insertion loss. Moreover, since the inductance of the single spiral inductor is not adjustable, the frequency adjustment of the band pass filter formed by the spiral inductor can only be realized by the MOS varactor. The adjustment range of the MOS varactor is very small, resulting in a filter with a narrow tuning range for the center frequency of the passband. In addition, the adjustment of the Q value and the center frequency of the bandpass filter often affect each other, so the problem of increasing the Q value and adjusting the center frequency of the bandpass filter becomes a problem to be solved by those skilled in the art.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model lies in, to the above-mentioned defect of prior art, a band-pass filter active inductance Q value reinforcing module is provided.
The utility model discloses a band-pass filter active inductance Q value reinforcing module, which comprises a first input unit, a second input unit, a first active inductance unit, a second active inductance unit, a negative resistance unit, a first output unit and a second output unit; the first input unit is electrically connected with the first active inductance unit, the first active inductance unit is electrically connected with the negative resistance unit and the first output unit respectively, the negative resistance unit is electrically connected with the second active inductance unit and the second output unit respectively, and the second active inductance unit is electrically connected with the second input unit.
Preferably, the first input unit includes a first MOS transistor and a second MOS transistor; the source electrode of the first MOS tube is electrically connected with the drain electrode of the second MOS tube, the drain electrode of the first MOS tube is electrically connected with the first active inductance unit, and the source electrode of the second MOS tube is grounded.
Preferably, the first active inductance unit includes a first triode, a second triode, a third MOS transistor, a feedback resistor, a first current source and a second current source; the base electrode of the first triode is electrically connected with the input unit and the negative resistance unit respectively, the collector electrode of the first triode is electrically connected with the emitter electrode of the second triode and the third MOS tube respectively, the emitter electrode of the first triode is grounded, the collector electrode of the second triode is electrically connected with the first end of the feedback resistor and the first current source respectively, the second end of the feedback resistor is electrically connected with the base electrode of the third triode, the collector electrode of the third triode is electrically connected with the first current source, and the emitter electrode of the third triode is electrically connected with the second current source.
Preferably, the second active inductance unit has the same structure as the first active inductance unit.
Preferably, the negative resistance unit comprises a fourth MOS transistor, a fifth MOS transistor and a third current source; the drain electrode of the fourth MOS tube is respectively electrically connected with the base electrode of the first triode, the first output unit and the grid electrode of the fifth MOS tube, the source electrode of the fourth MOS tube is electrically connected with the first end of the third current source, the grid electrode of the fourth MOS tube is respectively electrically connected with the drain electrode of the fifth MOS tube, the second output unit and the second active inductance unit, the source electrode of the fifth MOS tube is electrically connected with the first end of the third current source, and the second end of the third current source is grounded.
Preferably, the first output unit includes a sixth MOS transistor and a fourth current source; the grid electrode of the sixth MOS tube is electrically connected with the first active inductor and the negative resistance unit respectively, the source electrode of the sixth MOS tube is electrically connected with the first end of the fourth current source, the drain electrode of the sixth MOS tube is connected with the input voltage, and the second end of the fourth current source is grounded.
Preferably, the second output unit has the same structure as the first output unit.
The utility model discloses a band-pass filter active inductance Q value reinforcing module has following beneficial effect, the utility model discloses a band-pass filter active inductance Q value reinforcing module includes: the circuit comprises a first input unit, a second input unit, a first active inductance unit, a second active inductance unit, a negative resistance unit, a first output unit and a second output unit; the first input unit is electrically connected with the first active inductance unit, the first active inductance unit is electrically connected with the negative resistance unit and the first output unit respectively, the negative resistance unit is electrically connected with the second active inductance unit and the second output unit respectively, and the second active inductance unit is electrically connected with the second input unit. The first input unit and the second input unit are used for receiving differential input voltage, and the first active inductance unit and the second active inductance unit are main constituent parts and functional modules of the filter circuit; the negative resistance unit is used for effectively compensating resistance loss generated by the first active inductance unit and the second active inductance unit and improving the Q value of the filter; the first output unit and the second output unit are used for outputting differential voltage. The utility model discloses an adjust the bias condition of active inductance and active negative resistance circuit, can effectively increase the Q value of wave filter, have high Q value, can harmonious and do benefit to integrated advantage.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the present invention will be further described with reference to the accompanying drawings and embodiments, wherein the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained without inventive efforts according to the drawings:
fig. 1 is a schematic block diagram of an active inductance Q-factor enhancement module of a bandpass filter according to a preferred embodiment of the present invention;
fig. 2 is a circuit diagram of an active inductance Q-factor enhancement module of a bandpass filter according to a preferred embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, a clear and complete description will be given below with reference to the technical solutions of the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, belong to the scope of protection of the present invention.
Fig. 1 shows a preferred embodiment of the present invention, which includes a first input unit 1, a second input unit 2, a first active inductance unit 3, a second active inductance unit 4, a negative resistance unit 5, a first output unit 6, and a second output unit 7; the first input unit 1 is electrically connected with the first active inductance unit 3, the first active inductance unit 3 is electrically connected with the negative resistance unit 4 and the first output unit 6, the negative resistance unit 5 is electrically connected with the second active inductance unit 4 and the second output unit 7, and the second active inductance unit 4 is electrically connected with the second input unit 7. The first input unit 1 and the second input unit 2 are configured to receive a differential input voltage, and the first active inductance unit 3 and the second active inductance unit 4 are a main component and a functional module of a filter circuit; the negative resistance unit 5 is used for effectively compensating resistance loss generated by the first active inductance unit 3 and the second active inductance unit 4, and improving the Q value of the filter; the first output unit 3 and the second output unit 4 are used for outputting differential voltages. The utility model discloses an adjust the bias condition of active inductance and active negative resistance circuit, can effectively increase the Q value of wave filter, have high Q value, can harmonious and do benefit to integrated advantage.
Preferably, the first input unit 1 includes a first MOS transistor M3 and a second MOS transistor M1; the source of the first MOS transistor M3 is electrically connected to the drain of the second MOS transistor M1, the drain of the first MOS transistor M1 is electrically connected to the first active inductance unit 3, and the source of the second MOS transistor M1 is grounded. It can be understood that the Cascode structure of the first input unit 1 can provide a large output resistance, thereby greatly reducing the load effect between the first input unit 1 and the first active inductance unit 2 for input impedance matching and converting a differential input voltage into a current to be supplied to the first active inductance unit.
Preferably, the first active inductance unit 3 includes a first transistor Q1, a second transistor Q3, a third transistor Q2, a third MOS transistor Mz, a feedback resistor MR, a first current source I1, and a second current source I2; the base electrode of the first triode Q1 is electrically connected with the input unit 1 and the negative resistance unit 5, the collector electrode of the first triode Q1 is electrically connected with the emitter electrode of the second triode Q3 and the third MOS transistor Mz, the emitter electrode of the first triode Q1 is grounded, the collector electrode of the second triode Q3 is electrically connected with the first end of the feedback resistor MR and the first current source I1, the second end of the feedback resistor MR is electrically connected with the base electrode of the third triode Q2, the collector electrode of the third triode Q2 is electrically connected with the first current source I1, and the emitter electrode of the third triode Q2 is electrically connected with the second current source I2. It can be understood that the first transistor Q1 and the second transistor Q3 form a Cascode structure, which effectively increases the output resistance of the first transistor Q1, and thus achieves bandwidth expansion. Meanwhile, the Cascode structure also enables the series resistance in the active inductor equivalent circuit to be reduced and the parallel resistance to be increased, and the two changes are beneficial to the increase of the Q value. The third MOS tube Mz forms a shunt branch, the current flowing through the first triode Q1 is changed by adjusting the shunt size of the gate voltage control branch of the third MOS tube Mz, so that the transconductance of the first triode Q1 is adjusted, and the adjustment of the equivalent inductance value of the Cascode active inductor is realized. The feedback resistor MR forms an additional inductive reactance in the loop, effectively increasing the equivalent inductance value of the Cascode active inductor. The equivalent inductance value increases, and the Q value of the Cascode active inductor also increases. In the present embodiment, the adjustment of the center frequency of the filter is realized by adjusting the current magnitude of the first current source I1 in the first active inductance unit 3; the Q value of the filter can be adjusted by changing the resistance values of the feedback resistor MR and the-Rn in the negative resistance unit. When the filter center frequency is adjusted by adjusting the current of the first current source I1, the change of the filter Q value caused by the change of I1 can be compensated by adjusting the resistance of the feedback resistor MR, so that the filter center frequency and the Q value can be independently tuned.
Preferably, the second active inductance unit 4 is identical in structure to the first active inductance unit 3. Referring to fig. 2, the structure of the second active inductance unit 4 is not described herein again.
Preferably, the negative resistance unit 5 includes a fourth MOS transistor M7, a fifth MOS transistor M8, and a third current source I5; the drain of the fourth MOS transistor M7 is electrically connected to the base of the first transistor Q1, the gates of the first output unit 6 and the fifth MOS transistor M8, the source of the fourth MOS transistor M7 is electrically connected to the first end of the third current source I5, the gate of the fourth MOS transistor M7 is electrically connected to the drain of the fifth MOS transistor M8, the second output unit 7 and the second active inductor unit 4, the source of the fifth MOS transistor M8 is electrically connected to the first end of the third current source I5, and the second end of the third current source I5 is grounded. It can be understood that the negative resistance unit is used for compensating the resistance loss generated by the active inductance circuit, further increasing the Q value of the filter, and further realizing the adjustability of the Q value of the filter.
Preferably, the first output unit 6 includes a sixth MOS transistor M5 and a fourth current source I3; the gate of the sixth MOS transistor M5 is electrically connected to the first active inductor 3 and the negative resistance unit 5, respectively, the source of the sixth MOS transistor M5 is electrically connected to the first end of the fourth current source I3, the drain of the sixth MOS transistor M5 is connected to the input voltage, and the second end of the fourth current source I3 is grounded. In this embodiment, the second output unit 7 has the same structure as the first output unit 6, and is not described herein again.
To sum up, the utility model provides a band-pass filter active inductance Q value reinforcing module includes first input unit 1, second input unit 2, first active inductance unit 3, second active inductance unit 4, negative resistance unit 5, first output unit 6 and second output unit 7; the first input unit 1 is electrically connected with the first active inductance unit 3, the first active inductance unit 3 is electrically connected with the negative resistance unit 4 and the first output unit 6, the negative resistance unit 5 is electrically connected with the second active inductance unit 4 and the second output unit 7, and the second active inductance unit 4 is electrically connected with the second input unit 7. The first input unit 1 and the second input unit 2 are configured to receive a differential input voltage, and the first active inductance unit 3 and the second active inductance unit 4 are a main component and a functional module of a filter circuit; the negative resistance unit 5 is used for effectively compensating resistance loss generated by the first active inductance unit 3 and the second active inductance unit 4, and improving the Q value of the filter; the first output unit 3 and the second output unit 4 are used for outputting differential voltages. The utility model discloses an adjust the bias condition of active inductance and active negative resistance circuit, can effectively increase the Q value of wave filter, have high Q value, can harmonious and do benefit to integrated advantage.
The above detailed description is made on the Q-value enhancement module of the active inductor of the bandpass filter provided by the present invention, and the specific examples are applied herein to explain the principles and embodiments of the present invention, and the descriptions of the above embodiments are only used to help understand the method and core ideas of the present invention; meanwhile, to the general technical personnel in this field, according to the utility model discloses an idea, all can have the change part on concrete implementation and application scope, to sum up, this description content only is the utility model discloses an embodiment, does not consequently restrict the utility model discloses a patent scope, all utilize the equivalent structure or the equivalent flow transform that the content of the description and the attached drawing did, or directly or indirectly use in other relevant technical fields, all the same reason is included in the utility model discloses a patent protection scope. And should not be construed as limiting the invention.
Claims (7)
1. An active inductance Q value enhancement module of a band-pass filter, comprising: the circuit comprises a first input unit, a second input unit, a first active inductance unit, a second active inductance unit, a negative resistance unit, a first output unit and a second output unit; the first input unit is electrically connected with the first active inductance unit, the first active inductance unit is electrically connected with the negative resistance unit and the first output unit respectively, the negative resistance unit is electrically connected with the second active inductance unit and the second output unit respectively, and the second active inductance unit is electrically connected with the second input unit.
2. The active inductor Q-factor enhancement module of claim 1, wherein the first input unit comprises a first MOS transistor and a second MOS transistor; the source electrode of the first MOS tube is electrically connected with the drain electrode of the second MOS tube, the drain electrode of the first MOS tube is electrically connected with the first active inductance unit, and the source electrode of the second MOS tube is grounded.
3. The active inductance Q-factor enhancement module of claim 2, wherein the first active inductance unit comprises a first transistor, a second transistor, a third MOS transistor, a feedback resistor, a first current source, and a second current source; the base electrode of the first triode is respectively electrically connected with the input unit and the negative resistance unit, the collector electrode of the first triode is respectively electrically connected with the emitter electrode of the second triode and the third MOS tube, the emitter electrode of the first triode is grounded, the collector electrode of the second triode is respectively electrically connected with the first end of the feedback resistor and the first current source, the second end of the feedback resistor is electrically connected with the base electrode of the third triode, the collector electrode of the third triode is electrically connected with the first current source, and the emitter electrode of the third triode is electrically connected with the second current source.
4. The active inductance Q-factor enhancer module of claim 3, wherein the second active inductance unit is identical in structure to the first active inductance unit.
5. The active inductance Q-factor enhancer module of a band-pass filter according to claim 4, wherein said negative resistance unit comprises a fourth MOS transistor, a fifth MOS transistor and a third current source; the drain electrode of the fourth MOS tube is respectively electrically connected with the base electrode of the first triode, the first output unit and the grid electrode of the fifth MOS tube, the source electrode of the fourth MOS tube is electrically connected with the first end of the third current source, the grid electrode of the fourth MOS tube is respectively electrically connected with the drain electrode of the fifth MOS tube, the second output unit and the second active inductance unit, the source electrode of the fifth MOS tube is electrically connected with the first end of the third current source, and the second end of the third current source is grounded.
6. The active inductance Q-factor enhancement module of a band-pass filter according to claim 5, wherein the first output unit comprises a sixth MOS transistor and a fourth current source; the grid electrode of the sixth MOS tube is electrically connected with the first active inductor and the negative resistance unit respectively, the source electrode of the sixth MOS tube is electrically connected with the first end of the fourth current source, the drain electrode of the sixth MOS tube is connected with the input voltage, and the second end of the fourth current source is grounded.
7. The active inductance Q-factor enhancer module of claim 6, wherein the second output unit has the same structure as the first output unit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021679251.4U CN212850435U (en) | 2020-08-12 | 2020-08-12 | Active inductance Q value enhancement module of band-pass filter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021679251.4U CN212850435U (en) | 2020-08-12 | 2020-08-12 | Active inductance Q value enhancement module of band-pass filter |
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| CN212850435U true CN212850435U (en) | 2021-03-30 |
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