CN212783432U

CN212783432U - Novel ESD transistor

Info

Publication number: CN212783432U
Application number: CN202022038911.7U
Authority: CN
Inventors: 刘志强; 龙立; 王来营; 吴秀明; 王升龙
Original assignee: Reasunos Semiconductor Technology Co ltd
Current assignee: Ruisen semiconductor technology (Guangdong) Co.,Ltd.
Priority date: 2020-09-16
Filing date: 2020-09-16
Publication date: 2021-03-23
Anticipated expiration: 2030-09-16

Abstract

The utility model relates to a novel ESD transistor, which comprises an ESD transistor body, a protective shell and a fixed base, wherein a fixed groove is arranged in the protective shell, the bottom of a limiting groove is provided with a clamping groove, the clamping groove is matched with a limiting block, the edge of the bottom of a baffle is fixed with a spring, the spring is fixed at the bottom of an assembling groove, the bottom of the assembling groove is fixed with a connecting electrode groove, a pin is fixed on the fixed base and connected with the connecting electrode groove, a connecting rod is matched with the connecting electrode groove, the novel ESD transistor has stable self-operation, good buffering and damping effects and good heat dissipation performance, a temperature control switch controls the opening and closing of a semiconductor refrigeration radiating fin to radiate heat of the ESD transistor body, the service life of the semiconductor refrigeration radiating fin is prolonged, and energy consumption is reduced at the same time, energy conservation and environmental protection.

Description

Novel ESD transistor

Technical Field

The utility model relates to a transistor equipment technical field specifically is a novel ESD transistor.

Background

As is well known, an existing ESD transistor is an auxiliary device for a transistor device, which is widely used in the field of transistor device technology.

For example, the patent publication "CN 208622706U" is named as: the patent of "a new kind of high performance ESD transistor structure", the patent discloses "the utility model discloses a new kind of high performance ESD transistor structure, it relates to the technical field of transistor equipment; the heat dissipation structure comprises an outer shell, an ESD transistor body, a fixing frame, a plurality of longitudinal radiating tubes, a plurality of transverse radiating tubes and an insulation pad, wherein a mounting groove is formed in the outer shell, the ESD transistor body is arranged in the mounting groove, the two corners of the bottom of the ESD transistor body are fixedly provided with the fixing frame, the lower end of the fixing frame is fixedly arranged on a fixing plate body, the two ends of the fixing plate body are fixedly arranged on the inner side wall of the outer shell, the bottom of the ESD transistor body is fixedly provided with a radiating block, the lower end of the radiating block is fixedly provided with the plurality of longitudinal radiating tubes, the plurality of longitudinal radiating tubes are; the utility model can improve the strength and the heat dissipation performance, and adopts a natural heat dissipation mode during heat dissipation, thereby having few heat dissipation devices and high heat dissipation performance; can prolong the service life, is simple and convenient to operate and can save time.

The existing novel high-performance ESD transistor structure is found in use, the ESD transistor is fixed and unstable, a radiating pipe is inconvenient to install frequently, the radiating effect is poor, the device is difficult to disassemble, and the use limitation is high due to inconvenient assembly.

SUMMERY OF THE UTILITY MODEL

Technical problem to be solved

Not enough to prior art, the utility model provides a novel ESD transistor that the radiating effect is good.

(II) technical scheme

In order to achieve the above object, the utility model provides a following technical scheme: a novel ESD transistor comprises an ESD transistor body, a protective shell and a fixed base, wherein a fixed groove is arranged in the protective shell, the ESD transistor body is arranged in the fixed groove, a connecting rod is arranged below the ESD transistor body and penetrates through the protective shell to be connected with the fixed base, an insulating filler is arranged between the ESD transistor body and the connecting rod, a partition plate is arranged in the fixed groove and is arranged above the ESD transistor body, a hole is formed in the partition plate, a temperature control switch is fixed on the partition plate and is arranged on the periphery of the hole, a cooling device is fixed above the partition plate and is connected with the ESD transistor body through the hole, the cooling device comprises a heat dissipation plate and a semiconductor refrigeration heat dissipation plate, and the semiconductor refrigeration heat dissipation plate is connected with the temperature control switch, the stopper is fixed to the protecting sheathing both sides, the unable adjustment base top is provided with the assembly groove, assembly inslot both sides are provided with the spacing groove, the protecting sheathing with the assembly groove phase-match, the stopper with the spacing groove phase-match, spacing tank bottoms portion is provided with the draw-in groove, the draw-in groove with the stopper phase-match, the assembly inslot is provided with buffering fixing device, buffering fixing device includes baffle and spring, be provided with the through-hole on the baffle, baffle bottom edge is fixed with the spring, the spring is fixed assembly tank bottoms portion, assembly tank bottoms portion is fixed with the connection electrode groove, the last pin that is fixed with of unable adjustment base, the pin with the connection electrode groove is connected, the connecting rod with the connection electrode groove phase-match.

For the convenience make buffering fixing device job stabilization, the utility model discloses the improvement has, the spring sets up to the multiunit, the even arrangement of spring is in baffle below.

In order to carry out the buffering protection to the device in the protecting sheathing, make device work more stable, the utility model discloses the improvement has, the baffle edge fastening has the blotter.

For the convenience the material has certain heat resistance and insulating nature when guaranteeing buffering shock attenuation effect, the utility model discloses the improvement has, the blotter material is silica gel or rubber.

For the convenience dispels the heat to ESD transistor body, the utility model discloses the improvement has, the protecting sheathing top is provided with the louvre, the louvre sets up heat sink week side.

In order to guarantee the shock attenuation cushioning effect to protecting sheathing, the utility model discloses the improvement has, the stopper can slide from top to bottom in the draw-in groove.

(III) advantageous effects

Compared with the prior art, the utility model provides a novel ESD transistor possesses following beneficial effect:

this novel ESD transistor, self job stabilization has good buffering cushioning effect, has good heat dispersion, and temperature detect switch control semiconductor refrigeration fin opens and closes, to ESD transistor body heat dissipation, has increased the life of semiconductor refrigeration fin, has reduceed energy consumption simultaneously, and is energy-concerving and environment-protective.

Drawings

FIG. 1 is a schematic structural view of the present invention;

fig. 2 is a partial cross-sectional view of the present invention shown in fig. 1;

fig. 3 is a front view of the structure of the present invention.

In the figure: 1. an ESD transistor body; 2. a protective housing; 3. a fixed base; 4. fixing grooves; 5. a connecting rod; 6. an insulating filler; 7. a cooling device; 8. a partition plate; 9. a temperature control switch; 10. a heat dissipation plate; 11. a semiconductor refrigeration heat sink; 12. a limiting block; 13. assembling a groove; 14. a limiting groove; 15. a card slot; 16. a buffer fixing device; 17. a baffle plate; 18. a spring; 19. an electrode tank; 20. a pin; 21. a cushion pad; 22. and (4) heat dissipation holes.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1-3, a novel ESD transistor comprises an ESD transistor body 1, a protective casing 2 and a fixing base 3, wherein a fixing groove 4 is formed in the protective casing 2, the ESD transistor body 1 is formed in the fixing groove 4, a connecting rod 5 is arranged below the ESD transistor body 1, the connecting rod 5 penetrates through the protective casing 2 and is connected with the fixing base 3, an insulating filler 6 is arranged between the ESD transistor body 1 and the connecting rod 5, a partition plate 8 is arranged in the fixing groove 4, the partition plate 8 is arranged above the ESD transistor body 1, a hole is formed in the partition plate 8, a temperature control switch 9 is fixed on the partition plate 8, the temperature control switch 9 is arranged at the periphery of the hole, a cooling device 7 is fixed above the partition plate 8, and the cooling device 7 is connected with the ESD transistor body 1 through the hole, the cooling device 7 comprises a cooling plate 10 and a semiconductor cooling fin 11, the semiconductor cooling fin 11 is connected with the temperature control switch 9, limit blocks 12 are fixed on two sides of the protective shell 2, an assembly groove 13 is arranged above the fixed base 3, limit grooves 14 are arranged on two sides in the assembly groove 13, the protective shell 2 is matched with the assembly groove 13, the limit blocks 12 are matched with the limit grooves 14, a clamping groove 15 is arranged at the bottom of the limit groove 14, the clamping groove 15 is matched with the limit blocks 12, a buffering fixing device 16 is arranged in the assembly groove 13, the buffering fixing device 16 comprises a baffle 17 and a spring 18, a through hole is arranged on the baffle 17, the spring 18 is fixed on the edge of the bottom of the baffle 17, the spring 18 is fixed at the bottom of the assembly groove 13, and a connecting electrode groove 19 is fixed at the bottom of the assembly groove 13, and a pin 20 is fixed on the fixed base 3, the pin 20 is connected with the connecting electrode groove 19, and the connecting rod 5 is matched with the connecting electrode groove 19.

The springs 18 are arranged in multiple groups, and the springs 18 are uniformly arranged below the baffle 17, so that the buffer fixing device 16 can work stably for convenience.

A buffer pad 21 is fixed on the edge of the partition 8, so as to buffer and protect the device in the protective shell 2, and the device can work more stably.

The material of the buffer pad 21 is silica gel or rubber, so that the material has certain heat resistance and insulativity while the buffer damping effect is ensured.

The heat dissipation holes 22 are formed in the upper portion of the protection shell 2, the heat dissipation holes 22 are formed in the periphery of the cooling device 7, and therefore heat dissipation is conducted on the ESD transistor body 1 conveniently.

The limiting block 12 can slide up and down in the clamping groove 15, so as to ensure the damping and buffering effect on the protective shell 2.

To sum up, when the novel ESD transistor is used, the ESD transistor body 1 is placed in the fixing groove 4 of the protective casing 2, the ESD transistor body 1 is connected with the connecting rod 5, the lower part of the connecting rod 5 is matched with the connecting electrode groove 19 of the fixing base 3, the ESD transistor body 1 and the connecting rod 5 are filled and fixed by the insulating filler 6, the partition plate 8 is fixed above the ESD transistor body 1, the buffer cushion 21 is fixed on the upper edge of the partition plate 8, the through hole is arranged in the middle of the partition plate 8, the temperature control switch 9 is fixed on the peripheral side of the through hole, the cooling device 7 is fixed above the partition plate 8, the cooling device 7 comprises a cooling plate 10 and a semiconductor refrigeration cooling fin 11, the cooling device 10 is arranged at a certain temperature to dissipate heat, when the temperature is too high, the temperature control switch 9 turns on the semiconductor refrigeration fin 11 to dissipate heat of the ESD transistor body 1, and under the state that the device normally works, the energy consumption is reduced, the service life of the whole device is prolonged, a heat dissipation hole 22 is formed above the protective shell 2, a limiting block 12 is fixed below the protective shell 2, the limiting block 12 is matched with a limiting groove 14 of the fixed base 3, a clamping groove 15 is fixed below the limiting groove 14, the protective shell 2 is matched with an assembly groove 13 of the fixed base 3, a buffering fixing device 16 is fixed in the assembly groove 13, the buffering fixing device 16 is extruded to the lower portion of the limiting groove 14 by the protective shell 2, the limiting block 12 is moved into the clamping groove 15 by rotating the protective shell 2, the protective shell 2 is loosened, a spring 18 of the buffering fixing device 16 is reset to enable a baffle 17 to support the protective shell 2 and limit the protective shell 2 in the clamping groove 15, pins 20 are arranged below the fixed base 3 and connected with connecting electrodes, the fixed base 3 is fixed on a PCB when the device is used, and the ESD transistors on a circuit board can be completed only by replacing the protective shell 2 with ESD transistor bodies 1 of different models And (6) assembling.

In the embodiment, the ESD transistor body, the semiconductor refrigeration heat sink and the temperature control switch are all conventional electrical elements in the technical field of crystal equipment.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. A novel ESD transistor comprises an ESD transistor body (1), a protective shell (2) and a fixed base (3), and is characterized in that: a fixing groove (4) is formed in the protective shell (2), an ESD transistor body (1) is arranged in the fixing groove (4), a connecting rod (5) is arranged below the ESD transistor body (1), the connecting rod (5) penetrates through the protective shell (2) to be connected with the fixing base (3), an insulating filler (6) is arranged between the ESD transistor body (1) and the connecting rod (5), a partition plate (8) is arranged in the fixing groove (4), the partition plate (8) is arranged above the ESD transistor body (1), a hole is formed in the partition plate (8), a temperature control switch (9) is fixed on the partition plate (8), the temperature control switch (9) is arranged on the periphery of the hole, a cooling device (7) is fixed above the partition plate (8), and the cooling device (7) is connected with the ESD transistor body (1) through the hole, the cooling device (7) comprises a heating panel (10) and a semiconductor refrigeration cooling fin (11), the semiconductor refrigeration cooling fin (11) is connected with the temperature control switch (9), limit blocks (12) are fixed on two sides of the protective shell (2), an assembly groove (13) is arranged above the fixed base (3), limit grooves (14) are arranged on two sides in the assembly groove (13), the protective shell (2) is matched with the assembly groove (13), the limit blocks (12) are matched with the limit grooves (14), a clamping groove (15) is arranged at the bottom of the limit groove (14), the clamping groove (15) is matched with the limit blocks (12), a buffer fixing device (16) is arranged in the assembly groove (13), the buffer fixing device (16) comprises a baffle plate (17) and a spring (18), and a through hole is formed in the baffle plate (17), baffle (17) bottom edge is fixed with spring (18), spring (18) are fixed assembly groove (13) bottom, assembly groove (13) bottom is fixed with connection electrode groove (19), be fixed with pin (20) on unable adjustment base (3), pin (20) with connection electrode groove (19) are connected, connecting rod (5) with connection electrode groove (19) phase-match.

2. A novel ESD transistor in accordance with claim 1, wherein: the springs (18) are arranged in multiple groups, and the springs (18) are uniformly arranged below the baffle plate (17).

3. A novel ESD transistor in accordance with claim 1, wherein: and a buffer pad (21) is fixed at the edge of the clapboard (8).

4. A novel ESD transistor according to claim 3, wherein: the buffer pad (21) is made of silica gel or rubber.

5. A novel ESD transistor in accordance with claim 1, wherein: the heat dissipation holes (22) are formed in the upper portion of the protective shell (2), and the heat dissipation holes (22) are formed in the periphery of the cooling device (7).

6. A novel ESD transistor according to any of claims 1-5 characterized by: the limiting block (12) can slide up and down in the clamping groove (15).