CN212659664U - 5G low-profile high-performance ultra-wideband antenna oscillator and base station antenna - Google Patents
5G low-profile high-performance ultra-wideband antenna oscillator and base station antenna Download PDFInfo
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- CN212659664U CN212659664U CN202021270379.5U CN202021270379U CN212659664U CN 212659664 U CN212659664 U CN 212659664U CN 202021270379 U CN202021270379 U CN 202021270379U CN 212659664 U CN212659664 U CN 212659664U
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Abstract
The utility model discloses a low section high performance ultra wide band antenna oscillator of 5G and base station antenna, the low section high performance ultra wide band antenna oscillator of 5G is including consecutive bottom plate, support and base plate, the top surface of base plate is equipped with the metal level, the center of metal level is equipped with the cross recess, four irradiators are separated into with the metal level to the cross recess, be equipped with the feeder circuit and the first conductor layer of looks coupling on the support, be equipped with the second conductor layer on the bottom plate, the first conductor layer switches on with metal level and second conductor layer respectively, the tip bifurcation of cross recess forms two sub gaps that communicate the metal level border respectively, form the resonant structure who is triangle-shaped between two sub gaps. According to the 5G low-profile high-performance ultra-wideband antenna oscillator, the triangular resonance structure is loaded through the unique polygonal radiator structure, and under the condition that the size of an antenna is not increased, the antenna array has the advantages of being low in height, small in size, light in weight and easy to integrate, and meanwhile, the antenna frequency band and the antenna radiation performance index are effectively improved.
Description
Technical Field
The utility model relates to a base station antenna technical field especially relates to 5G low section high performance ultra wide band antenna oscillator and base station antenna.
Background
With the large-scale application of 5G technology, the number of 5G base station antennas has increased explosively. At present, 5G base station antennas all adopt large-scale antenna array antennas to realize Massive MIMO technology and beamforming technology, thereby greatly increasing communication rate. However, the increase in the size of the 5G base station antenna array also greatly increases the volume, weight and cost of the antenna array. How to effectively reduce the volume, weight and cost of the base station antenna array is a key issue that must be considered in the design of the base station antenna.
At present, the manufacturing process of the 5G antenna is relatively mature, and the cost reduction of the antenna is a trend of industry development. Therefore, miniaturization of the antenna array subunit has become an inevitable trend, and in order to effectively reduce the volume of the antenna array, the height of the base station antenna element is also reduced from about one quarter wavelength to about one tenth wavelength, which brings great challenges to the design of the base station antenna. In order to reduce the height of the antenna element of the base station, the scheme of reducing the height of the dipole antenna element and adopting a patch antenna is mainly adopted at present. Because the bandwidth of the dipole antenna is limited, how to improve the bandwidth of the dipole antenna element and reduce the height of the antenna element is an urgent problem to be solved by the base station antenna.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the technical problem that will solve is: provided are a 5G low-profile high-performance ultra-wideband antenna element and a base station antenna.
In order to solve the technical problem, the utility model discloses a technical scheme be: 5G low-profile high-performance ultra wide band antenna oscillator, including bottom plate, support and the base plate that links to each other in proper order, the top surface of base plate is equipped with the metal level, the center of metal level is equipped with the cross slot, the cross slot will four irradiators are separated into to the metal level, are equipped with coupled feed line and first conductor layer on the support, are equipped with the second conductor layer on the bottom plate, first conductor layer respectively with metal level and second conductor layer switch on, the tip bifurcation of cross slot forms two and communicates respectively the sub-gap at metal level border forms the resonance structure that is triangle-shaped between two sub-gaps.
Furthermore, the four radiators and the four resonant structures form an antenna radiation surface, and the antenna radiation surface is of a central symmetry structure.
Furthermore, a first window is arranged on the resonance structure.
Furthermore, the first window is triangular, and the resonant structure is triangular frame-shaped.
Furthermore, a first microstrip line is arranged in the first window, and at least one end of the first microstrip line is connected with the resonance structure.
Furthermore, a second window is arranged on the radiating body.
Furthermore, the second opening window is in a polygonal shape.
Furthermore, a second microstrip line is arranged in the second window, and at least one end of the second microstrip line is connected with the radiator.
Further, the resonance structure is in the shape of an isosceles right triangle.
In order to solve the technical problem, the utility model discloses still adopt following technical scheme: the base station antenna comprises the 5G low-profile high-performance ultra-wideband antenna element.
The beneficial effects of the utility model reside in that:
(1) the 5G low-profile high-performance ultra-wideband antenna oscillator is suitable for realizing a Massive MIMO technology and a beam forming technology by a 5G large-scale antenna array antenna, and is also suitable for realizing low profile and miniaturization of the antenna by a small base station antenna;
(2) according to the 5G low-profile high-performance ultra-wideband antenna oscillator, the triangular resonance structure is loaded through the unique polygonal radiator structure, and under the condition that the size of an antenna is not increased, the antenna array has the advantages of being low in height, small in size, light in weight and easy to integrate, and meanwhile, the antenna frequency band and the antenna radiation performance index are effectively improved.
(3) The method is suitable for the 3D plastic vibrator processing technology, easy to process and good in batch consistency.
Drawings
Fig. 1 is a schematic structural diagram of a 5G low-profile high-performance ultra-wideband antenna oscillator according to a first embodiment of the present invention;
fig. 2 is a front view of a 5G low-profile high-performance ultra-wideband antenna element according to a first embodiment of the present invention;
fig. 3 is a top view of a substrate in a 5G low-profile high-performance ultra-wideband antenna element according to a first embodiment of the present invention;
fig. 4 is a schematic structural diagram of a bracket in a 5G low-profile high-performance ultra-wideband antenna oscillator according to a first embodiment of the present invention;
fig. 5 is a top view of a substrate of another structure in a 5G low-profile high-performance ultra-wideband antenna element according to a first embodiment of the present invention;
fig. 6 is a top view of a substrate of another structure in a 5G low-profile high-performance ultra-wideband antenna element according to a first embodiment of the present invention;
fig. 7 is a top view of a substrate of another structure in a 5G low-profile high-performance ultra-wideband antenna element according to a first embodiment of the present invention;
fig. 8 is a top view of a substrate of another structure in a 5G low-profile high-performance ultra-wideband antenna element according to a first embodiment of the present invention;
fig. 9 is a port reflection coefficient diagram of a 5G low-profile high-performance ultra-wideband antenna element according to a first embodiment of the present invention;
fig. 10 is a port reflection coefficient diagram of a 5G low-profile high-performance ultra-wideband antenna element according to a first embodiment of the present invention;
fig. 11 is a diagram of a polarization isolation simulation result of a 5G low-profile high-performance ultra-wideband antenna oscillator according to the first embodiment of the present invention;
fig. 12 is an E-plane radiation field distribution diagram of a 5G low-profile high-performance ultra-wideband antenna element according to a first embodiment of the present invention;
fig. 13 is an H-plane radiation field distribution diagram of a 5G low-profile high-performance ultra-wideband antenna element according to a first embodiment of the present invention;
fig. 14 is a graph illustrating a gain variation of a 5G low-profile high-performance ultra-wideband antenna element according to a first embodiment of the present invention.
Description of reference numerals:
1. a base plate; 2. a support; 3. a substrate; 4. a cross groove; 5. a radiator; 6. a feed line; 7. a first conductor layer; 8. a second conductor layer; 9. a sub-gap; 10. a resonant structure; 11. a support plate; 12. rectangular grooving; 13. inserting a block; 14. a first windowing; 15. a first microstrip line; 16. second windowing; 17. a second microstrip line.
Detailed Description
In order to explain the technical content, the objects and the effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
Referring to fig. 1 to 14, a 5G low-profile high-performance ultra-wideband antenna oscillator includes a bottom plate 1, a support 2, and a substrate 3, which are sequentially connected to each other, wherein a metal layer is disposed on a top surface of the substrate 3, a cross slot 4 is disposed in a center of the metal layer, the metal layer is divided into four radiators 5 by the cross slot 4, the support 2 is provided with a feed line 6 and a first conductor layer 7, which are coupled to each other, the bottom plate 1 is provided with a second conductor layer 8, the first conductor layer 7 is respectively conducted to the metal layer and the second conductor layer 8, an end of the cross slot 4 is bifurcated to form two sub-slots 9 respectively communicated with edges of the metal layer, and a triangular resonant structure 10 is formed between the.
From the above description, the beneficial effects of the present invention are:
(1) the 5G low-profile high-performance ultra-wideband antenna oscillator is suitable for realizing a Massive MIMO technology and a beam forming technology by a 5G large-scale antenna array antenna, and is also suitable for realizing low profile and miniaturization of the antenna by a small base station antenna;
(2) according to the 5G low-profile high-performance ultra-wideband antenna oscillator, the triangular resonance structure 10 is loaded through the unique polygonal radiator 5 structure, and under the condition that the size of an antenna is not increased, the antenna array has the advantages of being low in height, small in size, light in weight and easy to integrate, and meanwhile, the antenna frequency band and the antenna radiation performance index are effectively improved.
(3) The method is suitable for the 3D plastic vibrator processing technology, easy to process and good in batch consistency.
Further, the four radiators 5 and the four resonant structures 10 form an antenna radiation surface, and the antenna radiation surface is a centrosymmetric structure.
From the above description, the 5G low-profile high-performance ultra-wideband antenna element can realize good dual polarization.
Further, a first window 14 is provided on the resonant structure 10.
From the above description, the shape of the first window 14 is various, which greatly enriches the diversity of the 5G low-profile high-performance ultra-wideband antenna element, and meanwhile, the performance of the 5G low-profile high-performance ultra-wideband antenna element can be adjusted by changing the shape and size of the first window 14.
Further, the first window 14 is triangular, and the resonant structure 10 is triangular frame-shaped.
From the above description, the triangular frame-shaped resonant structure 10 can not only expand the bandwidth and improve the standing wave to a greater extent, but also introduce the circular current around the 5G low-profile high-performance ultra-wideband antenna element, thereby effectively improving the cross polarization ratio and further improving the performance of the 5G low-profile high-performance ultra-wideband antenna element.
Further, a first microstrip line 15 is disposed in the first window 14, and at least one end of the first microstrip line 15 is connected to the resonant structure 10.
From the above description, the arrangement of the first microstrip line 15 enriches the diversity of the 5G low-profile high-performance ultra-wideband antenna oscillator, and meanwhile, the performance of the 5G low-profile high-performance ultra-wideband antenna oscillator can be adjusted by changing the shape, position and size of the first microstrip line 15 and the number of connection points with the resonant structure 10.
Further, a second window 16 is disposed on the radiator 5.
From the above description, the shape of the second window 16 is various, which greatly enriches the diversity of the 5G low-profile high-performance ultra-wideband antenna element, and meanwhile, the performance of the 5G low-profile high-performance ultra-wideband antenna element can be adjusted by changing the shape and size of the second window 16.
Further, the second window 16 has a polygonal shape.
As can be seen from the above description, the radiator 5 has a polygonal ring frame shape.
Further, a second microstrip line 17 is disposed in the second window 16, and at least one end of the second microstrip line 17 is connected to the radiator 5.
From the above description, the second microstrip line 17 is arranged to enrich the diversity of the 5G low-profile high-performance ultra-wideband antenna oscillator, and meanwhile, the performance of the 5G low-profile high-performance ultra-wideband antenna oscillator can be adjusted by changing the shape, position and size of the second microstrip line 17 and the number of connection points with the radiator 5.
Further, the resonant structure 10 is an isosceles right triangle.
The base station antenna comprises the 5G low-profile high-performance ultra-wideband antenna element.
From the above description, it can be seen that the base station antenna has at least all the benefits of the above-mentioned 5G low-profile high-performance ultra-wideband antenna element.
Example one
Referring to fig. 1 to 14, a first embodiment of the present invention is: referring to fig. 1 to 4, a base station antenna includes a 5G low-profile high-performance ultra wide band antenna oscillator, where the 5G low-profile high-performance ultra wide band antenna oscillator includes a bottom plate 1, a support 2, and a substrate 3, which are connected in sequence, a metal layer is disposed on a top surface of the substrate 3, a cross slot 4 is disposed in a center of the metal layer, the cross slot 4 divides the metal layer into four radiators 5, the support 2 is provided with a feed line 6 and a first conductor layer 7, which are coupled to each other, the bottom plate 1 is provided with a second conductor layer 8, the first conductor layer 7 is respectively conducted with the metal layer and the second conductor layer 8, an end of the cross slot 4 is bifurcated to form two sub-slots 9 respectively communicated with edges of the metal layer, and a triangular resonant structure 10 is formed between.
Referring to fig. 2 and 4, the support 2 includes two support plates 11 connected to each other, the two support plates 11 form a cross structure, the feeding line 6 is disposed on one side of each support plate 11, and the first conductor layer 7 is disposed on the other side of each support plate 11. The two feed lines 6 form a gamma-shaped coupling feed balun, the two feed lines 6 are distributed orthogonally, the structures of the two feed lines 6 are staggered in space so as to avoid intersection, in detail, the feed lines 6 are formed by connecting rectangular microstrip lines with different widths, impedance matching and feeding of a circuit can be completed by reasonably setting the width of each section of microstrip line, standing waves of the 5G low-profile high-performance ultra-wideband antenna oscillator are effectively improved, and the height of the 5G low-profile high-performance ultra-wideband antenna oscillator is reduced. In more detail, a rectangular slot 12 communicating with the radiator 5 is formed in the substrate 3, an insert 13 penetrating through the rectangular slot 12 is formed in the support plate 11, and a portion of the first conductor layer 7 penetrates through the rectangular slot 12 to connect the radiator 5, so that electromagnetic waves are conducted from the feeder line 6 to the radiator 5 and radiated.
The four radiators 5 and the four resonant structures 10 form an antenna radiation surface, and the antenna radiation surface is of a central symmetry structure.
The resonant structure 10 is provided with a first window 14, and the first window 14 may have any shape. Therefore, the resonant structure 10 can be a solid structure or a ring-shaped structure, so that the diversity of the 5G low-profile high-performance ultra-wideband antenna oscillator is effectively increased; optionally, the first window 14 is a triangle, and the resonant structure 10 is a triangular frame, in this embodiment, the resonant structure 10 has an outer contour that is an isosceles right triangle, and the first window 14 that is an isosceles right triangle is further disposed in the resonant structure 10, in other words, the resonant structure 10 is an isosceles right triangle frame in this embodiment. Of course, in other embodiments, the resonant structure 10 may also be in the shape of an equilateral triangle, an isosceles triangle, an obtuse triangle, or the like.
As shown in fig. 5 and 6, as a modification, a first microstrip line 15 is provided in the first window 14, and at least one end of the first microstrip line 15 is connected to the resonant structure 10.
As shown in fig. 7 and 8, a second window 16 is provided on the radiator 5, and the second window 16 may have any shape. Therefore, the radiator 5 can be of a solid structure or a ring frame structure, so that the diversity of the 5G low-profile high-performance ultra-wideband antenna oscillator is effectively increased; optionally, the second fenestration 16 is polygonal in shape. In this embodiment, the second window 16 has an octagonal shape. As a modification, a second microstrip line 17 is provided in the second window 16, and at least one end of the second microstrip line 17 is connected to the radiator 5. It is easy to understand that a large chamfer is formed at the adjacent position of two adjacent polygonal ring frame-shaped radiators 5 due to the existence of the sub-slot 9, and the triangular resonant structure 10 can be well placed at the position, so that the size miniaturization is realized while the ultrahigh antenna performance is realized by the 5G low-profile high-performance ultra-wideband antenna oscillator;
optionally, the substrate 3, the bracket 2 and the bottom plate 1 are of an integrally formed structure, for example, integrally injection-molded, 3D printed and formed, and the like.
The applicant carried out simulations according to the 5G low-profile high-performance ultra-wideband antenna element structure (i.e. the structure shown in fig. 1) of the present embodiment, and the simulation results are shown in fig. 9 to 14, wherein,
fig. 9 and fig. 10 are graphs of simulation results of reflection coefficients of antenna element ports, respectively, and it can be seen from the graphs that the return loss of the 5G low-profile high-performance ultra-wideband antenna element is small within 3.2GHz-4.2 GHz;
FIG. 11 is a diagram showing the simulation result of polarization isolation between ports, and it can be seen that the oscillator has good isolation in 3.2GHz-4.2 GHz;
fig. 12 is a simulation result diagram of an E-plane radiation pattern of a 5G low-profile high-performance ultra-wideband antenna element, from which it can be seen that the vertical plane pattern has good consistency and convergence;
fig. 13 is a simulation result diagram of an H-plane radiation pattern of a 5G low-profile high-performance ultra-wideband antenna element, from which it can be seen that the horizontal plane pattern has good consistency and convergence;
fig. 14 is a graph of the gain variation curve results for a 5G low profile high performance ultra-wideband antenna element, from which it can be seen that the 5G low profile high performance ultra-wideband antenna element has a higher gain within the band.
Therefore, the 5G low-profile high-performance ultra-wideband antenna oscillator has the advantages of wide bandwidth, high gain, directional diagram consistency, convergence and the like.
To sum up, the utility model provides a low section high performance ultra wide band antenna element of 5G and base station antenna through unique polygon irradiator structure loading triangle-shaped resonant structure, under the condition that does not increase antenna size, antenna array has the advantage that highly low, the size is little, light in weight and easy integration, simultaneously effectual antenna frequency band and the antenna radiation performance index of having improved.
The above mentioned is only the embodiment of the present invention, and not the limitation of the patent scope of the present invention, all the equivalent transformations made by the contents of the specification and the drawings, or the direct or indirect application in the related technical field, are included in the patent protection scope of the present invention.
Claims (10)
1.5G low section high performance ultra wide band antenna element, including bottom plate, support and the base plate that links to each other in proper order, the top surface of base plate is equipped with the metal level, the center of metal level is equipped with the cross slot, the cross slot will four irradiators are separated into to the metal level, are equipped with coupled feeder circuit and first conductor layer on the support, are equipped with the second conductor layer on the bottom plate, first conductor layer respectively with metal level and second conductor layer switch on its characterized in that: the end part of the cross groove is bifurcated to form two sub-gaps which are respectively communicated with the edge of the metal layer, and a triangular resonance structure is formed between the two sub-gaps.
2. The 5G low-profile high-performance ultra-wideband antenna element of claim 1, wherein: the four radiators and the four resonance structures form an antenna radiation surface, and the antenna radiation surface is of a central symmetry structure.
3. The 5G low-profile high-performance ultra-wideband antenna element of claim 1, wherein: a first windowing is arranged on the resonance structure.
4. The 5G low-profile high-performance ultra-wideband antenna element of claim 3, wherein: the first window is triangular, and the resonant structure is triangular frame-shaped.
5. The 5G low-profile high-performance ultra-wideband antenna element of claim 3, wherein: a first microstrip line is arranged in the first windowing, and at least one end of the first microstrip line is connected with the resonance structure.
6. The 5G low-profile high-performance ultra-wideband antenna element of claim 1, wherein: and a second window is arranged on the radiator.
7. The 5G low-profile high-performance ultra-wideband antenna element of claim 6, wherein: the second opening window is in a polygonal shape.
8. The 5G low-profile high-performance ultra-wideband antenna element of claim 6, wherein: and a second microstrip line is arranged in the second window, and at least one end of the second microstrip line is connected with the radiator.
9. The 5G low-profile high-performance ultra-wideband antenna element of claim 1, wherein: the resonance structure is in the shape of an isosceles right triangle.
10. A base station antenna, characterized by: comprising a 5G low profile high performance ultra-wideband antenna element according to any of claims 1-9.
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CN111786083A (en) * | 2020-07-01 | 2020-10-16 | 深圳市信维通信股份有限公司 | 5G low-profile high-performance ultra-wideband antenna oscillator and base station antenna |
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CN111786083A (en) * | 2020-07-01 | 2020-10-16 | 深圳市信维通信股份有限公司 | 5G low-profile high-performance ultra-wideband antenna oscillator and base station antenna |
CN111786083B (en) * | 2020-07-01 | 2024-06-11 | 深圳市信维通信股份有限公司 | 5G low-profile high-performance ultra-wideband antenna element and base station antenna |
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