CN212645649U - Device for measuring wafer diameter - Google Patents
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- CN212645649U CN212645649U CN202022013645.2U CN202022013645U CN212645649U CN 212645649 U CN212645649 U CN 212645649U CN 202022013645 U CN202022013645 U CN 202022013645U CN 212645649 U CN212645649 U CN 212645649U
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Abstract
The utility model discloses a device for measuring the diameter of a wafer; the apparatus may include: the device comprises a base, a support frame component, a bearing platform, an annular light emitting component, a CCD camera and a data processing part; the support frame component is arranged on the upper surface of the base and used for fixing the CCD camera and the annular light emitting component; the bearing table is arranged on the upper surface of the base, and the table top of the bearing table is used for bearing the wafer to be tested; the annular light emitting component irradiates the wafer to be detected from the vertical direction; a lens of the CCD camera is arranged on the upper side of the annular luminous component in the vertical direction, and an original contour image of the wafer to be detected in an irradiation state is collected in the vertical direction; the data processing part is configured to acquire edge data of the wafer to be detected based on the original contour image acquired by the CCD camera; fitting the profile data of the wafer to be detected according to the edge data of the wafer to be detected; and acquiring the diameter of the wafer to be detected according to the profile data of the wafer to be detected.
Description
Technical Field
The utility model relates to a wafer processing technology especially relates to a measure device of wafer diameter.
Background
In the process flow of wafer processing, after slicing a barreled single crystal silicon rod, the edge of a wafer obtained by slicing needs to be subjected to rounding processing, so that the edge of the wafer can form a certain outline shape, the mechanical strength and the machinability of the wafer are improved, and the diameter of the wafer is polished to a certain size to meet the requirements of customers; therefore, after chamfering, the wafer needs to be inspected to determine whether its diameter meets the requirements of the customer specification. Furthermore, after the wafer is subjected to the polishing process, it is usually only necessary to pass through one to two processes, such as a cleaning process and an epitaxial process (if necessary), to deliver the wafer product to the customer; therefore, the polished wafer also needs to have its diameter measured to check whether it meets the customer's requirements.
In order to measure the diameter of the wafer, the conventional solution is to perform the measurement operation by a measuring person by means of a micrometer or an optical projection. However, manual measurement is not only easily interfered by human, but also the measurement result is easily affected by human factors such as quality of measurement personnel, work experience, measurement steps and the like, so that the measurement accuracy is low, the deviation is large, and time and labor are wasted. In addition, in order to improve the measurement accuracy, in the process of executing a manual measurement scheme relying on manual work, the measurement needs to be sampled for different parts of the wafer for multiple times when the diameter of the wafer is measured, which further causes the efficiency of manual measurement to be low.
SUMMERY OF THE UTILITY MODEL
In view of the above, embodiments of the present invention are directed to an apparatus for measuring a wafer diameter; the manual intervention in the process of measuring the diameter of the wafer is avoided, the influence of human factors on the measurement result is reduced, and the measurement precision, efficiency and reliability are improved; in addition, continuous measurement can be realized, so that the diameter of the wafer can be conveniently and quickly measured, and control and automatic production are facilitated.
The embodiment of the utility model provides a technical scheme is so realized:
the embodiment of the utility model provides a measure device of wafer diameter, the device includes:
the device comprises a base, a support frame component, a bearing platform, an annular light emitting component, a CCD camera and a data processing part; wherein the content of the first and second substances,
the support frame component is arranged on the upper surface of the base and used for fixing the CCD camera and the annular light emitting component;
the bearing table is arranged on the upper surface of the base, and the table top of the bearing table is used for bearing the wafer to be tested;
the annular light-emitting component irradiates the wafer to be detected from the vertical direction;
a lens of the CCD camera is arranged on the upper side of the annular luminous component in the vertical direction, and an original contour image of the wafer to be detected in an irradiation state is acquired in the vertical direction;
the data processing part is configured to acquire edge data of the wafer to be detected based on the original contour image acquired by the CCD camera; fitting the profile data of the wafer to be detected according to the edge data of the wafer to be detected; and acquiring the diameter of the wafer to be detected according to the profile data of the wafer to be detected.
The embodiment of the utility model provides a device for measuring the diameter of a wafer; the method comprises the steps of collecting images of a wafer to be measured in the vertical direction, obtaining edge data of the wafer to be measured according to the images, fitting the edge data into outline data of the wafer to be measured, and finally obtaining the diameter of the wafer to be measured according to the outline data, so that the diameter of the wafer to be measured can be measured in a non-contact mode. Therefore, damage and pollution to the edge of the wafer to be measured can be reduced, the limitation of the wafer to be measured on the placement position in the measuring process is reduced, and the measuring freedom is improved. In addition, the measurement precision and the measurement speed can be improved by measuring through images, the anti-interference capability is strong, the integration degree is high, and the centralized acquisition and analysis of measurement data can be carried out so as to carry out diameter analysis and statistics in the following. The setting can be reported to the police and is indicted under the unqualified condition of discovery diameter in process of production, reduces the cost of labor, avoids human error, the control and automated production of being convenient for.
Drawings
Fig. 1 is a schematic structural diagram of an apparatus for measuring a wafer diameter according to an embodiment of the present invention.
Fig. 2 is a schematic view illustrating a wafer to be tested according to an embodiment of the present invention.
Fig. 3 is a schematic view of an implementation process for measuring a wafer diameter according to an embodiment of the present invention.
Detailed Description
In order to illustrate embodiments of the present invention or technical solutions in the prior art more clearly, the following description will be made in conjunction with the accompanying drawings in embodiments of the present invention to describe the technical solutions in the embodiments of the present invention clearly and completely, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
Referring to fig. 1, the embodiment of the present invention further provides an apparatus 80 for measuring a wafer diameter, which may include, referring to fig. 1: a base 81, a support frame member 82, a stage 83, a ring-shaped light emitting member, a CCD camera 85, and a data processing section (not shown); wherein the content of the first and second substances,
the supporting frame part 82 is arranged on the upper surface of the base 81 and used for fixing the CCD camera 85 and the annular light-emitting part;
the bearing table 83 is arranged on the upper surface of the base 81, and the table surface of the bearing table 83 is used for bearing the wafer 2 to be tested;
the annular light-emitting component irradiates the wafer 2 to be detected from the vertical direction;
the lens of the CCD camera 85 is vertically disposed above the annular light emitting component 83, and collects an original contour image of the wafer 2 to be measured in an irradiation state in the vertical direction;
the data processing part is configured to acquire edge data of the wafer 2 to be measured based on the original contour image acquired by the CCD camera 85; fitting the profile data of the wafer 2 to be tested according to the edge data of the wafer 2 to be tested; and acquiring the diameter of the wafer to be detected according to the profile data of the wafer 2 to be detected.
It should be noted that, based on the above-mentioned apparatus 80, a schematic diagram of the wafer 2 to be tested being placed on the susceptor 83 is shown in fig. 2. With reference to fig. 1 and 2, an image of the wafer 2 to be measured is acquired in the vertical direction, edge data of the wafer 2 to be measured is acquired according to the image and is fitted to profile data of the wafer 2 to be measured, and finally, the diameter of the wafer to be measured is acquired according to the profile data, so that non-contact measurement of the diameter of the wafer 2 to be measured can be achieved. Therefore, damage and pollution to the edge of the wafer 2 to be measured can be reduced, the limitation of the wafer 2 to be measured on the placement position in the measuring process is reduced, and the measuring freedom is improved. In addition, the measurement precision and the measurement speed can be improved by measuring through images, the anti-interference capability is strong, the integration degree is high, and the centralized acquisition and analysis of measurement data can be carried out so as to carry out diameter analysis and statistics in the following. The setting can be reported to the police and is indicted under the unqualified condition of discovery diameter in process of production, reduces the cost of labor, avoids human error, the control and automated production of being convenient for.
For the apparatus 80 shown in fig. 1, in some examples, a plurality of air holes are uniformly arranged on the table top of the bearing table 83 at a set distance from the center of the table top; the apparatus 80 further includes a vacuum pumping device (not shown) for sucking the wafer 2 to be tested on the table of the susceptor 83 by pumping the air in the air holes.
For the above example, a gasket may be disposed around each air hole, and a distance between the height of the gasket and the height of the mesa of the susceptor 83 is smaller than a set distance threshold, so that the height of the gasket is slightly higher than the upper surface of the susceptor 83, so as to provide a buffer for the wafer 2 to be tested in the process of being adsorbed.
For the device 80 shown in fig. 1, in some examples, the support frame component 82 may include an L-shaped upright 821; the horizontal extending end of the L-shaped pillar 821 is used for fixing the CCD camera 85, the non-extending end of the L-shaped pillar 821 is disposed on the upper surface of the base 81, and a groove 822 is formed in a vertical side surface of the L-shaped pillar 821, and a fastener 824 such as a screw may be used to fix the annular light emitting component at a set vertical height. In addition, fixing plates 823 are provided on both side surfaces of the groove 822, and the L-shaped pillar 821 can be reinforced to improve stability thereof.
For the apparatus 80 shown in fig. 1, in some examples, the annular light emitting member includes a first annular light 841, a second annular light 842, a first annular lampshade 843, and a second annular lampshade 844; wherein, first annular luminous body 841 and second annular luminous body 842 in vertical direction symmetry set up in the both sides of plummer 83 to can shine from top to bottom and from bottom to top ground to the wafer 2 that awaits measuring respectively in vertical direction, in order to improve the contrast of CCD camera in the collection image in-process. Accordingly, the first annular lampshade 843 is disposed on the upper side of the first annular luminous body 841 in the vertical direction, and the second annular lampshade 844 is disposed on the lower side of the second annular luminous body 842 in the vertical direction. Based on this example, when the CCD camera 85 collects an image, the light emitted by the first annular luminous body 841 and the second annular luminous body 842 is prevented from diverging to a direction other than the direction of the wafer 2 to be measured, and the definition of the image is improved.
For the above example, the first annular illuminant 841 and the second annular illuminant 842 are preferably annular telecentric light sources, which can eliminate the phenomena of edge blurring and the like caused by light source diffusion, obtain clear and sharp images with edges, and improve the measurement accuracy. In addition, the outer dimensions of the first and second ring illuminators 841 and 842 are preferably set to be larger than the diameter of the wafer 2 to be measured, so as to ensure that the entire contour of the wafer 2 to be measured can be irradiated. In addition, the first annular illuminant 841, the second annular illuminant 842, the first annular lampshade 843 and the second annular lampshade 844 are annular, so that the CCD camera 85 can collect the original outline image of the wafer 2 to be measured through the annular hollow part, and the second annular illuminant 842 can move up and down on the periphery of the bearing table 83, and the bearing table 83 penetrates through the annular hollow part of the second annular illuminant 842.
In addition, in order to realize the transfer of the wafer 2 to be measured, the apparatus 80 may further include a robot (not shown) for taking and placing the wafer 2 to be measured, moving it from one position to another, for example, placing the wafer 2 to be measured on the stage of the Carrier 83, or taking out and placing the wafer 2 to be measured in a Carrier (Carrier) of an apparatus used in a subsequent process flow after the measurement is completed.
For the apparatus 80 shown in fig. 1, in some examples, the lens of the CCD camera 85 is preferably a wide view double-sided telecentric lens; understandably, the outline image of the wafer 2 to be measured is reduced by several times or tens of times through a telecentric lens with a large visual angle and a large depth of field, and then is transmitted to a high-resolution CCD camera 85 with several million pixels for digital processing, and then background drawing measurement software with strong computing power is operated by means of a data processing part to quickly capture the outline image of the wafer 2 to be measured according to a pre-programmed instruction, and then the outline image is compared with a scale formed by small pixels of a high-pixel camera to calculate the diameter of the wafer 2 to be measured.
Based on the apparatus 80 shown in fig. 1 and its example and illustration, the process of implementing the measurement as shown in fig. 3 may include the following steps:
s1: placing the wafer 2 to be tested on the bearing table 83 through a manipulator, and irradiating the wafer 2 to be tested from the vertical direction through an annular light emitting part;
at this time, the vacuum-pumping device may be activated to pump the air in the air holes on the susceptor 83 so that the wafer 2 to be tested is adsorbed on the top of the susceptor 83.
S2: acquiring an original profile image of the wafer 2 to be detected by a CCD camera 85;
s3: processing the original contour image through the data processing part 86 according to a set image processing strategy to acquire edge data of the wafer 2 to be detected;
as for step S3, specifically, the data processing section 86 may perform gradation processing on the original contour image, using threshold processing to generate a binary image. In detail, thresholding is a widely used region segmentation technique; firstly, selecting a proper threshold value by utilizing the inconsistency of gray values of an object and a background; then, whether each pixel point in the original contour image meets the requirement of a threshold value is judged, and whether the pixel point belongs to an object or a background is determined according to whether the threshold value requirement is met. The acquired original contour image is converted into a gray image and a binary image, and the purpose is to improve the operation speed of image processing. Then, an edge detection algorithm (e.g., Canny detection algorithm) is used to obtain the edge data of the wafer 2 to be detected from the binary image.
S4: fitting the profile of the wafer 2 to be detected by the data processing part 86 by using a least square method according to the edge data of the wafer 2 to be detected to obtain profile data of the wafer 2 to be detected;
s5: acquiring the diameter of the wafer 2 to be tested according to the fitted profile data of the wafer 2 to be tested;
for step S5, the profile data of the wafer 2 to be measured may be compared with the scale formed by the tiny pixels of the high-pixel camera, so as to calculate and obtain the diameter of the wafer 2 to be measured, specifically, the telecentric lens adopted by the CCD camera 85 generates an image scale when acquiring the original profile image of the wafer 2 to be measured, and when the original profile image is reduced by several times or several tens times and transmitted to the high-resolution CCD camera with several million pixels for digital processing, the graphic scale reduced by the corresponding times may be obtained; and then extracting coordinate information of the reduced border pixel points of the image ruler, and removing abnormal pixel point data. And the pixel measurement may include: performing linear fitting by using a least square method, and solving a linear equation of two vertical boundaries and a horizontal lower boundary of the ruler; and respectively calculating the pixel coordinates of two end points at the lower end of the scale, and calculating the pixel distance of the two end points according to a distance formula between the two end points so as to obtain the scale formed by the pixel points. The actual length of the reduced image represented by each pixel can be calculated by using the width of the ruler in the reduced image and the pixel rulers at two end points, and the diameter of the wafer 2 to be measured can be obtained by multiplying the reduction times.
For the above process, it should be noted that after the diameter of the wafer to be measured is obtained, the wafer to be measured can be taken away from the carrying table 83 by using the manipulator, and whether the diameter of the wafer 2 to be measured is within the specification range can be judged and evaluated according to the diameter of the wafer 2 to be measured; if the wafer is in the specification range, the wafer is qualified, and the qualified wafer to be tested is placed in the bearing device of the qualified wafer box by using the manipulator; if the wafer is not in the specification range, the wafer is unqualified, and the unqualified wafer to be tested is placed in the bearing device of the unqualified wafer box by using the manipulator.
By executing the process, the measurement and evaluation of the diameter of the wafer to be measured can be completed, the detection efficiency and the precision are improved, the diameter of the wafer can be conveniently and quickly measured, the human error is avoided, the continuous measurement is realized, and the control and the automatic production are convenient.
The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention should be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (7)
1. An apparatus for measuring a diameter of a wafer, the apparatus comprising:
the device comprises a base, a support frame component, a bearing platform, an annular light emitting component, a CCD camera and a data processing part; wherein the content of the first and second substances,
the support frame component is arranged on the upper surface of the base and used for fixing the CCD camera and the annular light emitting component;
the bearing table is arranged on the upper surface of the base, and the table top of the bearing table is used for bearing the wafer to be tested;
the annular light-emitting component irradiates the wafer to be detected from the vertical direction;
a lens of the CCD camera is arranged on the upper side of the annular luminous component in the vertical direction, and an original contour image of the wafer to be detected in an irradiation state is acquired in the vertical direction;
the data processing part is configured to acquire edge data of the wafer to be detected based on the original contour image acquired by the CCD camera; fitting the profile data of the wafer to be detected according to the edge data of the wafer to be detected; and acquiring the diameter of the wafer to be detected according to the profile data of the wafer to be detected.
2. The device of claim 1, wherein a plurality of air holes are uniformly arranged on the table top of the bearing table at a set distance from the center of the table top; the device also comprises a vacuumizing device which is used for enabling the wafer to be detected to be adsorbed on the table surface of the bearing table by extracting air in the air holes.
3. The apparatus of claim 2, wherein a gasket is disposed around each of the air holes, and a distance between a height of the gasket and a height of the top of the susceptor is less than a predetermined distance threshold, so as to provide a buffer for the wafer to be tested during the process of being adsorbed.
4. The apparatus of claim 1, wherein the support frame member comprises an L-shaped upright; the CCD camera is fixed on the base, the horizontal extending end of the L-shaped stand column is used for fixing the CCD camera, the non-extending end of the L-shaped stand column is arranged on the upper surface of the base, a groove is formed in the side face of the L-shaped stand column in the vertical direction, and the annular light emitting component is fixed at a set vertical height by a fastener.
5. The apparatus of claim 1, wherein the annular light emitting member comprises a first annular light emitter, a second annular light emitter, a first annular light cover, and a second annular light cover; the first annular luminous body and the second annular luminous body are symmetrically arranged on two sides of the bearing table in the vertical direction, so that the wafer to be detected is irradiated from top to bottom and from bottom to top in the vertical direction respectively; first annular lamp shade set up in vertical direction in the upside of first annular luminous body, second annular lamp shade set up in vertical direction in the downside of second annular luminous body.
6. The device of claim 5, wherein the first and second annular illuminants are annular telecentric light sources and the outside dimensions of the first and second annular illuminants are larger than the diameter of the wafer to be tested; the first annular luminous body, the second annular luminous body, the first annular lampshade and the second annular lampshade are circular rings, so that the CCD camera collects original outline images of the wafer to be detected through the circular hollow part, the second annular luminous body moves up and down on the periphery of the bearing table, and the bearing table penetrates through the circular hollow part of the second annular luminous body.
7. The apparatus of claim 1, wherein the lens of the CCD camera is a wide view double-sided telecentric lens.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114216401A (en) * | 2021-12-13 | 2022-03-22 | 苏州肯美特设备集成有限公司 | Diameter measuring device for semiconductor material device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114216401A (en) * | 2021-12-13 | 2022-03-22 | 苏州肯美特设备集成有限公司 | Diameter measuring device for semiconductor material device |
| CN114216401B (en) * | 2021-12-13 | 2024-01-05 | 苏州肯美特设备集成股份有限公司 | Diameter measuring device for semiconductor material device |
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