CN212587490U - Power module with good heat dissipation performance and electronic product - Google Patents
Power module with good heat dissipation performance and electronic product Download PDFInfo
- Publication number
- CN212587490U CN212587490U CN202021309315.1U CN202021309315U CN212587490U CN 212587490 U CN212587490 U CN 212587490U CN 202021309315 U CN202021309315 U CN 202021309315U CN 212587490 U CN212587490 U CN 212587490U
- Authority
- CN
- China
- Prior art keywords
- power module
- module body
- good heat
- heat dissipation
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000017525 heat dissipation Effects 0.000 title claims description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 109
- 238000005057 refrigeration Methods 0.000 claims abstract description 62
- 239000000919 ceramic Substances 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000006185 dispersion Substances 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 claims description 38
- 238000001816 cooling Methods 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 15
- 230000000712 assembly Effects 0.000 claims description 11
- 238000000429 assembly Methods 0.000 claims description 11
- 238000005538 encapsulation Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 5
- 238000003466 welding Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 206010037660 Pyrexia Diseases 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 235000011089 carbon dioxide Nutrition 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a power module with good heat dispersion, a serial communication port, including power module body and semiconductor refrigeration subassembly, the power module body adopts the ceramic copper-clad plate as the base plate, semiconductor refrigeration subassembly has cold junction and hot junction, semiconductor refrigeration subassembly the cold junction ceramic plate with the ceramic copper-clad plate of power module body adopts same ceramic plate. The cold end ceramic plate through semiconductor refrigeration subassembly in this scheme adopts same ceramic plate with the ceramic copper-clad plate of power module body for the former cold end ceramic plate that the ceramic copper-clad plate replaced semiconductor refrigeration subassembly makes the chip can the direct contact cold end need not pass through other welding material's centre conduction, and heat transfer efficiency is high, the radiating effect is better.
Description
Technical Field
The utility model relates to the field of semiconductor technology, especially, relate to a power module and electronic product with good heat dispersion.
Background
The semiconductor is a material with the conductive capability between a conductor and a non-conductor, the semiconductor element belongs to a solid element according to the characteristics of the semiconductor material, the volume of the semiconductor element can be reduced to a small size, so the power consumption is low, the integration level is high, the semiconductor element is widely introduced in the technical field of electronics, along with the gradual increase of the operating power of the semiconductor element, the large heat generation amount brought by the frequency increase is always a key topic discussed by many over-frequency equipment fever friends, and the cooling method is used up from air cooling, water cooling, compressor and semiconductor refrigeration to crazy liquid nitrogen and dry ice. The relatively common air-cooled radiators and water-cooled radiators have become the standard arrangements for entry-level super-frequent fevers due to their low cost and ease of use, but have the disadvantage that even the best air-cooled or water-cooled radiators can only be controlled to a temperature close to or equal to the ambient temperature. In order to reduce the temperature below zero, the heat-producing workers have selected compressors and semiconductor refrigeration. The Vapocall and Mach series compressors can make the evaporator temperature reach-50 ℃ through phase change refrigeration, and the three-stage compressor system made by foreign enthusiasts even reaches-196 ℃, namely the temperature is equivalent to the evaporation temperature of liquid nitrogen. However, due to the high price of the compressor system, the compressor system can only be accepted by a few fevers, liquid nitrogen and dry ice may be limit sharps which can only be used by the very fevers of bone ash, the evaporation/sublimation speed is very high, the compressor system can only bring limit efficiency in a short time, and the compressor system has no practical value.
SUMMERY OF THE UTILITY MODEL
The embodiment of the utility model provides an aim at: there is provided a power module having a good heat dissipation performance, which can solve the above-mentioned problems existing in the prior art.
Another object of the embodiment of the present invention is to provide an electronic device with a power module having good heat dissipation performance.
In order to achieve the purpose, the utility model adopts the following technical proposal:
on the one hand, the power module with good heat dissipation performance is provided, including power module body and semiconductor refrigeration subassembly, the power module body adopts the ceramic copper-clad plate as the base plate, semiconductor refrigeration subassembly has cold junction and hot junction, semiconductor refrigeration subassembly's cold junction ceramic plate with the ceramic copper-clad plate of power module body adopts same ceramic plate.
As a preferable technical solution of the power module with good heat dissipation performance, the semiconductor refrigeration component further includes a metal conductor for electrical connection, the metal conductor is folded toward the power module body to form a conductor fixing portion, and the conductor fixing portion passes through the power module body and protrudes from a side of the power module body not provided with the semiconductor refrigeration component.
As a preferable aspect of the power module having a good heat dissipation performance, the power module body includes a case and a sealing material, and the conductor fixing portion penetrates through both the case and the sealing material.
As a preferable aspect of the power module having good heat dissipation performance, the power module body includes a case and a sealing material, and the conductor fixing portion extends through the case to a side of the power module body not provided with the semiconductor cooling module.
As a preferable aspect of the power module having a good heat dissipation performance, the housing has an extension portion extending outward, and the conductor fixing portion extends through the extension portion to a side of the power module body where the semiconductor cooling module is not provided.
As a preferable technical solution of the power module with good heat dissipation performance, there are two semiconductor refrigeration assemblies, the two semiconductor refrigeration assemblies are respectively located at two sides of the power module body, and cold ends of the two semiconductor refrigeration assemblies are both arranged toward the power module body.
As a preferable technical solution of the power module with good heat dissipation performance, the semiconductor refrigeration assembly includes P-type semiconductors and N-type semiconductors uniformly arranged between the cold end and the hot end, and metal conductors pressed on the inner surfaces of the cold end and the hot end of the semiconductor refrigeration assembly and connected in heat conduction manner and connecting the P-type semiconductors and the N-type semiconductors in series, and both ends of the semiconductor chain after series connection are powered on for refrigeration.
As a preferable technical solution of the power module with good heat dissipation performance, the power module body includes at least two chips, the two chips are packaged into a whole in a side-by-side arrangement manner, and the semiconductor refrigeration assemblies are respectively disposed on the sides of the two chips that are away from each other.
As a preferable technical solution of the power module with good heat dissipation performance, two semiconductor refrigeration modules are connected in parallel.
On the other hand, an electronic product is provided, which has the power module with good heat dissipation performance.
The utility model has the advantages that: the semiconductor refrigeration assembly is arranged in the power module to dissipate heat of the power module body, the heat of the power module can be greatly reduced by utilizing the excellent heat dissipation performance of the semiconductor refrigeration assembly, the heat dissipation speed is high, the sustainability is good, the product cost is relatively low, the size and the structure of a product can be unchanged when the power density of a chip is increased, and the semiconductor refrigeration assembly can be suitable for batch production and widely applied.
Simultaneously, the cold junction ceramic plate through semiconductor refrigeration subassembly in this scheme adopts same ceramic plate with the ceramic copper-clad plate of power module body for the former cold junction ceramic plate that the ceramic copper-clad plate replaced semiconductor refrigeration subassembly makes the chip can the direct contact cold junction need not pass through other welding material's middle conduction, and heat transfer efficiency is high, the radiating effect is better.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Fig. 1 is a schematic structural diagram of a power module with good heat dissipation performance according to a first embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a power module with good heat dissipation performance according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a power module with good heat dissipation performance according to a third embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a power module with good heat dissipation performance according to a fourth embodiment of the present invention.
Fig. 5 is a schematic structural diagram of a power module with good heat dissipation performance according to an embodiment of the present invention.
In the figure:
100. a power module body; 110. a chip; 120. a substrate; 130. an encapsulating resin; 140. a housing; 200. a semiconductor refrigeration assembly; 210. an N-type semiconductor; 220. a P-type semiconductor; 230. a metal conductor; 231. a conductor fixing portion; 240. a ceramic plate.
Detailed Description
In order to make the technical problem solved by the present invention, the technical solutions adopted by the present invention and the technical effects achieved by the present invention clearer, the embodiments of the present invention are described in further detail below, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by those skilled in the art without creative efforts belong to the protection scope of the present invention.
In the description of the present invention, unless otherwise expressly specified or limited, the terms "connected," "connected," and "fixed" are to be construed broadly, e.g., as meaning permanently connected, detachably connected, or integral to one another; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the present disclosure, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact between the first and second features, or may comprise contact between the first and second features not directly. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The first embodiment is as follows:
as shown in fig. 1, the power module with good heat dissipation performance includes a power module body 100 and a semiconductor refrigeration assembly 200, wherein the power module body 100 uses a ceramic copper-clad plate as a substrate 120, the semiconductor refrigeration assembly 200 has a cold end and a hot end, and the same ceramic plate 240 is used for the ceramic plate 240 of the cold end of the semiconductor refrigeration assembly 200 and the ceramic copper-clad plate of the power module body 100.
Through setting up semiconductor refrigeration subassembly 200 in the power module in this scheme and dispel the heat to power module body 100, utilize the good heat dispersion of semiconductor refrigeration subassembly 200 can reduce the heat of power module by a wide margin, its radiating rate is fast, sustainability is good, product cost is lower relatively, product size and structure can be unchangeable when chip 110 power density increases, can be applicable to batch production and by wide application.
Simultaneously, the cold junction ceramic plate 240 through semiconductor refrigeration subassembly 200 in this scheme adopts same ceramic plate 240 with the ceramic copper-clad plate of power module body for the former cold junction ceramic plate 240 that the ceramic copper-clad plate replaced semiconductor refrigeration subassembly 200 makes chip 110 can the direct contact cold junction need not pass through other welding material's middle conduction, and heat transfer efficiency is high, the radiating effect is better.
In this embodiment, the semiconductor refrigeration assembly 200 includes a cold-end ceramic plate 240, a hot-end ceramic plate 240, P-type semiconductors 220 and N-type semiconductors 210, which are arranged in parallel and are uniformly arranged between the cold end and the hot end, and metal conductors 230, which are pressed on the inner surfaces of the cold end and the hot end of the semiconductor refrigeration assembly 200, are in heat conduction connection and connect the P-type semiconductors 220 and the N-type semiconductors 210 in series, and both ends of the series-connected semiconductor chain are powered on for refrigeration.
In the scheme, the P-type semiconductor 220 and the N-type semiconductor 210 which are adjacent to each other form a galvanic couple together through the metal conductor 230230, and the number of the galvanic couples is at least one.
It should be noted that the number of PN junctions formed by the flat semiconductor and the N-type semiconductor 210 in the present embodiment is not limited by the drawings in the embodiments, and it can be adjusted quantitatively according to the cooling requirement of the chip 110 in a specific product.
Meanwhile, the number of the chips 110 in the semiconductor body in the present scheme is not limited, and may be two as shown in the figure, or a product in which one chip 110 is packaged separately, or a product in which more than two chips 110 are packaged. The embodiment also provides an electronic product, which comprises the power module with good heat dissipation performance. The electronic product adopting the structure has lower chip temperature, higher product reliability and longer service life.
Example two:
as shown in fig. 2, the power module with good heat dissipation performance includes a power module body 100 and a semiconductor refrigeration assembly 200, the power module body 100 uses a ceramic copper-clad plate as a substrate 120, the semiconductor refrigeration assembly 200 has a cold end and a hot end, and the same ceramic plate 240 is used for the ceramic plate 240 of the cold end of the semiconductor refrigeration assembly 200 and the ceramic copper-clad plate of the power module body 100.
The semiconductor cooling device 200 in this embodiment further includes a metal conductor 230 for electrical connection, and the difference between this embodiment and the first embodiment is that the metal conductor 230 is folded toward the power module body 100 to form a conductor fixing portion 231, and the conductor fixing portion 231 penetrates through the power module body 100 and protrudes from a side of the power module body 100 not provided with the semiconductor cooling device 200.
The metal conductor 230 is folded and folded from the direction of the power module body 100 to form the conductor fixing portion 231, and the conductor fixing portion 231 penetrates through the power module body 100, so that the semiconductor refrigeration assembly 200 can be better fixed on the power module body 100, and on the other hand, the conductor fixing portion 231 penetrates through the power module body 100 and then is inserted and mounted in the same direction in the power module body 100.
Specifically, the power module body 100 includes a housing 140 and a packaging material, and the conductor fixing portion 231 penetrates through both the housing 140 and the packaging material.
It should be noted that in the implementation of the present embodiment, the conductor fixing portion 231 needs to be disposed away from the substrate 120.
The embodiment also provides an electronic product, which comprises the power module with good heat dissipation performance. The electronic product adopting the structure has lower chip temperature, higher product reliability and longer service life.
Example three:
as shown in fig. 3, the power module with good heat dissipation performance includes a power module body 100 and a semiconductor refrigeration assembly 200, the power module body 100 uses a ceramic copper-clad plate as a substrate 120, the semiconductor refrigeration assembly 200 has a cold end and a hot end, and the same ceramic plate 240 is used for the ceramic plate 240 of the cold end of the semiconductor refrigeration assembly 200 and the ceramic copper-clad plate of the power module body 100.
The semiconductor cooling module 200 in this embodiment further includes a metal conductor 230 for electrical connection, and this embodiment is substantially the same as the first embodiment, and the main difference is that the metal conductor 230 is folded toward the power module body 100 to form a conductor fixing portion 231, and the conductor fixing portion 231 passes through the power module body 100 and protrudes from a side of the power module body 100 not provided with the semiconductor cooling module 200.
Specifically, the power module body 100 includes a casing 140 and a packaging material, and the conductor fixing portion 231 extends through the casing 140 to a side of the power module body 100 not provided with the semiconductor cooling component 200. The housing 140 has an extension portion extending outward, and the conductor fixing portion 231 extends through the extension portion to a side of the power module body 100 not provided with the semiconductor cooling device 200.
The embodiment also provides an electronic product, which comprises the power module with good heat dissipation performance. The electronic product adopting the structure has lower chip temperature, higher product reliability and longer service life.
Example four:
as shown in fig. 4, the power module with good heat dissipation performance includes a power module body 100 and a semiconductor refrigeration assembly 200, the power module body 100 uses a ceramic copper-clad plate as a substrate 120, the semiconductor refrigeration assembly 200 has a cold end and a hot end, and the same ceramic plate 240 is used for the ceramic plate 240 of the cold end of the semiconductor refrigeration assembly 200 and the ceramic copper-clad plate of the power module body 100.
Specifically, in this embodiment, the number of the semiconductor refrigeration assemblies 200 is two, the two semiconductor refrigeration assemblies 200 are respectively located at two sides of the power module body 100, and the cold ends of the two semiconductor refrigeration assemblies 200 are both arranged toward the power module body 100.
The semiconductor cooling device 200 may be disposed on both sides to further improve the heat dissipation effect of the power module body 100.
The embodiment also provides an electronic product, which comprises the power module with good heat dissipation performance. The electronic product adopting the structure has lower chip temperature, higher product reliability and longer service life.
Example five:
as shown in fig. 5, the power module with good heat dissipation performance includes a power module body 100 and a semiconductor refrigeration assembly 200, the power module body 100 uses a ceramic copper-clad plate as a substrate 120, the semiconductor refrigeration assembly 200 has a cold end and a hot end, and the same ceramic plate 240 is used for the ceramic plate 240 of the cold end of the semiconductor refrigeration assembly 200 and the ceramic copper-clad plate of the power module body 100.
The present embodiment is substantially the same as the fourth embodiment, and the main difference is that in the present embodiment, an encapsulation resin 130 is disposed on the periphery of the power module body 100, and the cold ends of the semiconductor refrigeration assemblies 200 located on both sides are respectively embedded in the encapsulation resin 130.
The embodiment also provides an electronic product, which comprises the power module with good heat dissipation performance. The electronic product adopting the structure has lower chip temperature, higher product reliability and longer service life.
Example six:
this embodiment provides a power module with good heat dispersion, including power module body and semiconductor refrigeration subassembly, the power module body adopts the ceramic copper-clad plate as the base plate, semiconductor refrigeration subassembly has cold junction and hot junction, semiconductor refrigeration subassembly's cold junction ceramic plate with the same ceramic plate of ceramic copper-clad plate adoption of power module body.
In this embodiment the power module body is including two at least semiconductor chip modules, two the chip is as an organic whole through the mode encapsulation side by side, two the chip is provided with respectively semiconductor refrigeration subassembly. The two semiconductor refrigeration components are connected in parallel.
The embodiment also provides an electronic product, which comprises the power module with good heat dissipation performance. The electronic product adopting the structure has lower chip temperature, higher product reliability and longer service life.
In the description herein, it is to be understood that the terms "upper," "lower," "left," "right," and the like are used merely for convenience in description and simplicity in operation, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting. Furthermore, the terms "first" and "second" are used merely for descriptive purposes and are not intended to have any special meaning.
In the description herein, references to the description of "an embodiment," "an example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be appropriately combined to form other embodiments as will be appreciated by those skilled in the art.
The technical principle of the present invention is described above with reference to specific embodiments. The description is made for the purpose of illustrating the principles of the invention and should not be construed in any way as limiting the scope of the invention. Based on the explanations herein, those skilled in the art will be able to conceive of other embodiments of the present invention without any inventive effort, which would fall within the scope of the present invention.
Claims (10)
1. The utility model provides a power module with good heat dispersion, its characterized in that, includes power module body (100) and semiconductor refrigeration subassembly (200), power module body (100) adopt the ceramic copper-clad plate as base plate (120), semiconductor refrigeration subassembly (200) have cold junction and hot junction, the cold junction ceramic plate (240) of semiconductor refrigeration subassembly (200) with the ceramic copper-clad plate of power module body (100) adopts same ceramic plate (240).
2. The power module with good heat dissipation performance according to claim 1, wherein the semiconductor cooling module (200) further comprises a metal conductor (230) for electrical connection, the metal conductor (230) is folded toward the power module body (100) to form a conductor fixing portion (231), and the conductor fixing portion (231) passes through the power module body (100) and protrudes from a side of the power module body (100) where the semiconductor cooling module (200) is not disposed.
3. The power module with good heat dissipation performance according to claim 2, wherein the power module body (100) includes a case (140) and an encapsulating material, and the conductor fixing portion (231) penetrates both the case (140) and the encapsulating material.
4. The power module with good heat dissipation performance according to claim 2, wherein the power module body (100) includes a case (140) and an encapsulation material, and the conductor fixing portion (231) extends through the case (140) to a side of the power module body (100) not provided with the semiconductor cooling component (200).
5. The power module with good heat dissipation performance according to claim 4, wherein the case (140) has an extended portion extending outward, and the conductor fixing portion (231) extends through the extended portion to a side of the power module body (100) where the semiconductor cooling module (200) is not disposed.
6. The power module with good heat dissipation performance according to claim 1, wherein the number of the semiconductor cooling assemblies (200) is two, two of the semiconductor cooling assemblies (200) are respectively located at two sides of the power module body (100), and cold ends of the two semiconductor cooling assemblies (200) are both arranged towards the power module body (100).
7. The power module with good heat dissipation performance of claim 1, wherein the semiconductor cooling assembly (200) comprises a P-type semiconductor (220), an N-type semiconductor (210) and a metal conductor (230), wherein the P-type semiconductor (220) and the N-type semiconductor (210) are uniformly arranged between the cold end and the hot end, the metal conductor is pressed on the inner surfaces of the cold end and the hot end of the semiconductor cooling assembly (200) and is connected with the inner surfaces of the cold end and the hot end in a heat conduction mode, the P-type semiconductor (220) and the N-type semiconductor (210) are connected in series, and two ends of.
8. The power module with good heat dissipation performance as recited in claim 1, wherein the power module body (100) comprises at least two chips (110), and the two chips (110) are packaged together in a side-by-side arrangement.
9. The power module with good heat dissipation performance of claim 8, wherein two semiconductor cooling modules (200) are connected in parallel with each other.
10. An electronic product characterized by having the power module with good heat dissipation performance as recited in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021309315.1U CN212587490U (en) | 2020-07-06 | 2020-07-06 | Power module with good heat dissipation performance and electronic product |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021309315.1U CN212587490U (en) | 2020-07-06 | 2020-07-06 | Power module with good heat dissipation performance and electronic product |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212587490U true CN212587490U (en) | 2021-02-23 |
Family
ID=74654193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021309315.1U Active CN212587490U (en) | 2020-07-06 | 2020-07-06 | Power module with good heat dissipation performance and electronic product |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212587490U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115132907A (en) * | 2022-07-07 | 2022-09-30 | 河南华辰智控技术有限公司 | Chip packaging device for integrated circuit |
-
2020
- 2020-07-06 CN CN202021309315.1U patent/CN212587490U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115132907A (en) * | 2022-07-07 | 2022-09-30 | 河南华辰智控技术有限公司 | Chip packaging device for integrated circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105934139B (en) | The working medium cooling system by contact and its method of work of high power device | |
| CN2831423Y (en) | Active radiator of large-scale integrated chip | |
| CN112242480A (en) | Thermoelectric refrigeration method for chip-level electronic equipment | |
| WO2022000765A1 (en) | Household energy storage constant-temperature battery system | |
| CN212587490U (en) | Power module with good heat dissipation performance and electronic product | |
| CN212587489U (en) | Power module with good heat dissipation performance and electronic product | |
| CN113555492B (en) | Electronic waste heat collecting device and control method thereof | |
| CN109579353B (en) | Semiconductor refrigerator | |
| CN213752686U (en) | Electronic device | |
| CN110062565A (en) | Soaking plate based on thermoelectric cooling technology reinforces server efficient radiating apparatus and method | |
| CN103311196B (en) | High Density Integration micro-nano optoelectronic chip heat abstractor based on thermoelectric refrigerator | |
| CN201819471U (en) | High power refrigeration piece | |
| CN209731873U (en) | Power switching devices | |
| CN205847818U (en) | The working medium cooling system by contact of high power device | |
| CN115371287A (en) | Compact thermoelectric semiconductor refrigeration module with high refrigeration power density | |
| CN102192613A (en) | Semiconductor refrigerating chip subassembly | |
| CN112038745B (en) | Active phased array radar antenna array surface autonomous heat dissipation device based on Peltier effect | |
| CN113380734A (en) | IGBT device with double-sided heat dissipation | |
| CN210625001U (en) | Thermoelectric semiconductor refrigerator | |
| CN208874535U (en) | Thermal energy convection heat emission type photovoltaic module | |
| CN112510480A (en) | High-efficiency heat dissipation type high-power semiconductor laser heat sink with composite structure | |
| CN210925990U (en) | Semiconductor device with a plurality of transistors | |
| CN209804741U (en) | Battery pack and battery pack thermal management device | |
| CN217822770U (en) | Packaging structure of power module and vehicle | |
| CN217064420U (en) | Heat dissipation assembly and terminal equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |