CN212542438U - Fan-shaped alternating silicon pixel detector - Google Patents
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Abstract
The utility model discloses a fan-shaped alternating silicon pixel detector, which comprises an N-type silicon substrate, wherein the N-type silicon substrate is of a cylindrical structure, the lower surface of the N-type silicon substrate is provided with an N + incident surface, and the upper surface of the N-type silicon substrate is provided with a P + collecting surface; the P + collecting surface is composed of a P + type central pixel unit and a plurality of fan-shaped areas with equal intervals, the P + type central pixel unit is arranged at the central position of the P + collecting surface, each fan-shaped area is composed of a plurality of P + type pixel units A and P + type pixel units B which are alternately arranged from inside to outside, the P + type pixel units A and the P + type pixel units B at the same position of all the fan-shaped areas are alternately arranged at equal intervals to form a P + type pixel ring, a plurality of concentric P + type pixel rings are formed, the number of the P + type pixel rings is equal to the total number of the P + type pixel units A and the P + type pixel units B contained in each fan-shaped area, and the manufacturing process is simple, the yield is high, and the cost is low.
Description
Technical Field
The utility model belongs to the technical field of radiation detection, a fan-shaped alternating silicon pixel detector is related to.
Background
The semiconductor detector has the following advantages: (1) very high energy resolution, about an order of magnitude higher than gas detectors, is much higher than scintillation counters. Because only about 3eV energy is needed for ionizing and generating a pair of electron-hole pairs in a semiconductor, the electron-hole pairs generated in the semiconductor by charged particles with the same energy are higher than the ion pairs generated in gas by more than one order of magnitude; (2) the linear range of energy response is wide, and the average ionization work of a semiconductor is independent of the energy and the type of incident particles and the type of a detector; (3) response times on the order of ns; (4) the volume is small; (5) the position resolution is better than 1.4 μm, so the method is widely applied to the fields of high-energy physics and the like.
The rapid development and application of new semiconductor detectors have promoted the development of high-energy physics, wherein the development of silicon microstrip detectors, pixel detectors and CCDs is the prominent representative of new developments of semiconductor detectors. In recent ten years, SMDs (Surface Mounted Devices) have been adopted as vertex detectors in most of the world high-energy physical laboratories, and the development of the fields of celestial physics, cosmic physics, nuclear medicine digital imaging technology, and the like has been promoted. There have also been many new advances in the research of applications in the field of CT and other digitized images in the nuclear medicine field. However, in the early days, due to the technical limitation, only the low-resolution single-side reading silicon microstrip detector can be made. With the improvement of the technical level, a new technical process is adopted, and a silicon microstrip detector with bilateral reading is developed and has two-dimensional position testing capability. Meanwhile, a pixel detector is also greatly developed, each pixel is connected with its own readout electronics, a large number of electronics circuits are needed in each unit area, and the pixel detector has very good position resolution and is very useful for experiments with high multiplicity and high case rate. Compared with a silicon microstrip detector and a silicon drift chamber which are read out from two sides, the pixel detector has the advantage that the pixel detector provides two-dimensional high position resolution by using a single-side technical process. The silicon detector is one of semiconductor detectors, has good energy resolution, and two-dimensional position resolution can be realized by a silicon microstrip detector and a pixel detector which are read bilaterally, but the silicon microstrip detector and the pixel detector have the following defects: the silicon microstrip detector with bilateral reading needs to manufacture reading strips on two sides of a silicon wafer through an advanced technical process, so that the reading strips are intersected at a certain angle and have position testing capability; secondly, in order to solve the short circuit problem between the ohmic edge micro-strips, complex design and technical process are needed, so that the manufacturing cost is high and the yield is low.
Each cell of the pixel detector is connected with a read-out circuit thereof, has good position testing capability, and can be connected with the corresponding electronics through a double-layer metal technology or a flip-chip technology. However, in any technology, a large number of read channels are required, so that the difficulty of the manufacturing process of the read channels is increased, and the yield is low and the cost is high.
SUMMERY OF THE UTILITY MODEL
An object of the embodiment of the utility model is to provide a fan-shaped alternating silicon pixel detector to solve the current preparation technology complicacy, the yield of possessing the silicon detector of two-dimensional position resolving power, problem with low costs.
The embodiment of the utility model adopts the technical scheme that the fan-shaped alternating silicon pixel detector comprises an N-type silicon substrate which is of a cylinder structure, the lower surface of the N-type silicon substrate is provided with an N + incident surface, and the upper surface of the N-type silicon substrate is provided with a P + collecting surface;
the P + collecting surface is composed of a P + type central pixel unit and a plurality of fan-shaped areas with equal intervals, the P + type central pixel unit is arranged at the central position of the P + collecting surface, each fan-shaped area is composed of a plurality of P + type pixel units A and P + type pixel units B which are alternately arranged from inside to outside, the P + type pixel units A and the P + type pixel units B at the same position of all the fan-shaped areas are alternately arranged at equal intervals to form a P + type pixel ring, all the fan-shaped areas form a plurality of concentric P + type pixel rings, and the number of the P + type pixel rings is equal to the total number of the P + type pixel units A and the P + type pixel units B contained in each fan-shaped area.
Further, the central angles corresponding to the plurality of sector areas are the same.
Further, the p + -type pixel units A and the p + -type pixel units B of each sector area are alternately arranged at equal intervals; the distance between two adjacent p + type pixel rings is equal to the distance between the adjacent p + type pixel unit A and the adjacent p + type pixel unit B.
Further, the p + -type pixel units A and the p + -type pixel units B alternately arranged at equal intervals in each sector region are in a sector structure, and the areas of the p + -type pixel units A and the p + -type pixel units B alternately arranged at equal intervals are gradually increased from the inside to the outside.
Furthermore, a p + type pixel unit A and a p + type pixel unit B jointly form a fan-shaped ring structure, the p + type pixel unit A and the p + type pixel unit B respectively occupy half of each fan-shaped ring structure, each fan-shaped region is formed by a plurality of fan-shaped ring structures which are arranged from inside to outside at equal intervals, and the area of each fan-shaped ring structure is gradually increased from inside to outside.
Furthermore, each sector area is correspondingly connected with one theta readout metal connecting line, the theta readout metal connecting lines are in a ray shape, and each theta readout metal connecting line is connected with all the p + -type pixel units A or all the p + -type pixel units B in the corresponding sector area.
Furthermore, each P + pixel ring is correspondingly connected with an r readout metal connecting line, the r readout metal connecting lines are circular, and each r readout metal connecting line is connected with all the P + type pixel units B or all the P + type pixel units A which are not connected with the theta readout metal connecting line in the corresponding fan-shaped area.
Furthermore, the p + type central pixel unit is connected with the central position reading metal connecting line.
Furthermore, the theta readout metal connecting line, the r readout metal connecting line and the central position readout metal connecting line are respectively positioned on different planes and are separated by an insulating layer.
Furthermore, the N + incident surface consists of an N + heavily doped layer and a metal aluminum layer positioned on the surface of the N + heavily doped layer.
The embodiment of the utility model has the beneficial effects that, a fan-shaped alternative silicon pixel detector structure is proposed, use p + type pixel unit A and p + type pixel unit B that set up in turn to realize fan-shaped alternative silicon pixel detector's two-dimensional position resolving power, and through sputtering, single face technologies such as chemical vapor deposition come the theta of realizing alternately setting p + type pixel unit A and p + type pixel unit B and read the metal connecting wire, r reads the metal connecting wire, simple process, and compare with traditional pixel detector, this fan-shaped alternative silicon pixel detector's the reading channel number can reduce by a wide margin, reduced the preparation technology degree of difficulty of detector and reading channel when realizing fan-shaped alternative silicon pixel detector's two-dimensional position resolving power, the yield of detector has been improved, the cost of manufacture is reduced, the preparation technology complicacy of effectively having solved the silicon detector that has current two-dimensional position resolving power, Low yield and high cost.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic diagram of a structure of a silicon microstrip detector with bilateral readout.
Fig. 2 is a schematic diagram of the structure of a silicon pixel detector.
Fig. 3 is a schematic structural diagram of a fan-shaped alternating silicon pixel detector according to an embodiment of the present invention.
Figure 4 is a top view of a sector alternating silicon pixel detector theta readout metal connection in accordance with an embodiment of the present invention.
Figure 5 is a three-dimensional view of a sector-shaped alternating silicon pixel detector r and theta readout metal connections of an embodiment of the present invention.
Figure 6 is a top view of a sector alternating silicon pixel detector r and theta readout metal connections according to an embodiment of the present invention.
Fig. 7 is another structural schematic diagram of a fan-shaped alternating silicon pixel detector according to an embodiment of the present invention.
In the figure, 1.p + type readout silicon microstrip, 2.N + type readout silicon microstrip, 3.x direction electronics readout channel, 4.y direction electronics readout channel, 5.N type silicon substrate, 6. sensitive region, 7. electronics readout channel, 8. flip chip, 9.p + type pixel unit a, 10.p + type pixel unit B, 11.N + incident plane, 12. theta readout metal connecting line, 13.r readout metal connecting line, 14.p + type central pixel unit, 15. central position readout metal connecting line.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of a bilateral readout silicon microstrip detector, which is based on the working principle of a p-n junction and is made into a heavily doped p + type readout silicon microstrip 1 and an n + type readout silicon microstrip 2 on two sides of an n-type silicon substrate 5 by advanced technology. Thus, the silicon microstrip detector with the strip p-n junction type and the uniformly distributed surface and capable of bilateral reading is manufactured, the depletion layer in the middle part is a sensitive area of the detector, and when negative bias is applied to the strip p-n junctions, the depletion layer becomes thicker along with the increase of voltage under the action of an external electric field. When the voltage is high enough, the depletion layer almost extends to the whole n-type silicon wafer, full depletion is basically achieved, and the dead layer becomes very thin. When charged particles pass through a sensitive area of the detector, electron-hole pairs are generated, under the action of a high electric field, electrons drift to the n + type readout silicon micro-strips 2 close to the track, holes drift to the p + type readout silicon micro-strips 1 close to the track, and charge signals generated by drift motion are quickly read on the p + type readout silicon micro-strips 1 and the n + type readout silicon micro-strips 2. The p + type readout silicon microstrip 1 is connected with the y-direction electronic readout channel 4, the n + type readout silicon microstrip 2 is connected with the x-direction electronic readout channel 3, and the p + type readout silicon microstrip 1 and the n + type readout silicon microstrip 2 intersect to form a certain angle (90 degrees or any angle), so that the two-dimensional position testing capability is realized.
Figure 2 shows a schematic of the structure of a silicon pixel detector with a sensitive area 6 as shown, which is also developed according to the principle of a p-n junction, and which is internally composed of many well-designed very small p-n junctions, which is capable of providing two-dimensional information very quickly. Each pixel cell is connected to its own electronic read-out channel 7. The pixel detector thus fabricated is very useful for high multiplicity, high case rate experiments, but requires a large number of electronic circuits per unit area. In fig. 2, the flip-chip 8 is shown connecting each detector cell pixel and the corresponding electronic readout channel, i.e. a small solder ball or indium, gold, etc. is used to establish the electrical and mechanical connection between each pixel and its electronic readout circuitry.
Fig. 3 is a schematic structural diagram of a sector-shaped alternating silicon pixel detector according to an embodiment of the present invention, as shown in fig. 3, including an N-type silicon substrate 5, the N-type silicon substrate 5 is a cylindrical structure, the lower surface of the N-type silicon substrate is provided with an N + incident surface 11, the upper surface of the N-type silicon substrate 5 is provided with a P + collecting surface, the P + collecting surface is composed of a P + type central pixel unit 14 and a plurality of equally spaced sector-shaped regions arranged in the radial direction of the P + type central pixel unit 14, the P + type central pixel unit 14 is located at the central position of the P + collecting surface, all the sector-shaped regions are composed of a P + type pixel unit a9 and a P + type pixel unit B10 alternately arranged at equal intervals from inside to outside, and the P + type pixel unit a9 and the P + type pixel unit B10 at the same position of all the sector-shaped regions are alternately arranged to form a P + type pixel ring, all the sector-shaped regions form a plurality of concentric P + type pixel rings, the interval between two adjacent p + -type pixel rings is equal to the pitch between the adjacent p + -type pixel cell a9 and p + -type pixel cell B10. The structure of the p + -type pixel cell a9 and the p + -type pixel cell B10 may be provided as a fan-ring structure as shown in fig. 3, and the areas of the p + -type pixel cell a9 and the p + -type pixel cell B10 alternately disposed at equal intervals from the inside to the outside are gradually increased. The p + -type pixel cell a9 and the p + -type pixel cell B10 may be configured as shown in fig. 7, that is, one p + -type pixel cell a9 and one p + -type pixel cell B10 together form a fan-shaped ring structure, the p + -type pixel cell a9 and the p + -type pixel cell B10 respectively occupy half of each fan-shaped ring structure, each of the fan-shaped regions is configured by a plurality of fan-shaped ring structures arranged at equal intervals from the inside to the outside, and the area of the fan-shaped ring structures is gradually increased from the inside to the outside.
The P + collection surface may be designed to provide 360 equally spaced fan-shaped regions outside the P + type central pixel element 14, each fan-shaped region having a corresponding central angle of 1 °, and since each fan-shaped region is composed of alternately spaced P + type pixel elements a9 and P + type pixel elements B10, and the pixel elements of adjacent fan-shaped regions are also alternately arranged, the pixel elements in the fan-shaped regions are alternately connected and divided into regions for different r and different θ measurements.
The fan-shaped alternating silicon pixel detector is also based on the working principle of a p-N junction, a heavily doped p + collecting surface is manufactured on the upper bottom surface and the lower bottom surface of an N-type silicon substrate 5 through ion implantation, an N + heavily doped layer is manufactured after impurities are doped into the whole bottom surface, a metal aluminum layer is formed by aluminum plating on the heavily doped layer to form an N + incident surface 11, the N + incident surface 11 is used as an anode of the detector, and the metal aluminum layer is used for welding during biasing. When a negative bias is applied to the sector pixel p-n junction, the entire n-type silicon substrate 5 is fully depleted. When charged particles pass through the sensitive region of the detector, i.e. the N-type silicon substrate 5, electron-hole pairs are generated, and under the action of a high electric field, electrons drift downwards (i.e. the N + incidence surface 11), holes drift upwards (the P + collection surface), and charge signals generated by the movement of holes (actually electrons) are generated quickly on pixel units of the detector, i.e. the P + type pixel unit a9 and the P + type pixel unit B10.
Fig. 4 to 6 show the readout metal wiring portion of the fan-shaped alternating silicon pixel detector, and the readout circuit design thereof is similar to the form of polar coordinates, where r is the polar diameter and θ is the polar angle. The theta readout metal connecting lines 12 are in a ray shape, the r readout metal connecting lines 13 are in a circular shape, each sector area corresponds to a different angle theta, the smaller the theta is, the higher the measurement accuracy is, the size of the theta is set according to specific situations, one readout channel corresponding to each angle theta is required for measurement, therefore, the number of the theta readout metal connecting lines 12 is equal to that of the sector areas, the theta readout metal connecting lines 12 are connected with the sector areas with equal intervals in a one-to-one correspondence mode, and the theta readout metal connecting lines 12 corresponding to each sector area are connected with all the p + -type pixel units A9 or all the p + -type pixel units B10 in the sector area. The number of the r readout metal connecting lines 13 is equal to the number of the p + -type pixel rings, the r readout metal connecting lines 13 are connected with a plurality of concentric p + -type pixel rings in a one-to-one correspondence manner, the r readout metal connecting line 13 corresponding to each p + -type pixel ring is connected with all the p + -type pixel cells B10 or p + -type pixel cells a9 which are not connected with the theta readout metal connecting line 12 in the p + -type pixel ring, and the p + -type central pixel cell 14 is connected with the central position readout metal connecting line 15.
The θ readout metal connecting line 12, the r readout metal connecting line 13, and the center position readout metal connecting line 15 are three different metal connecting lines, which are respectively located on different planes, and are separated by an insulating layer. The θ readout metal connecting line 12, the r readout metal connecting line 13 and the central position readout metal connecting line 15 can be realized by the existing advanced and mature double-layer metal technology (sputtering, chemical vapor deposition and other processes), and are all single-sided planar processes, and the operation is simple.
As shown in fig. 6, the two-dimensional position testing capability of the fan-shaped alternating silicon pixel detector is illustrated by a specific example in the figure, and the angle corresponding to each fan-shaped area is set to be 20 °, that is, the circular detection area, namely the upper surface of the n-type silicon substrate 5, is divided into 18 fan-shaped areas. In the figure, along the direction of r readout metal connecting lines 13, the circular detection area consists of concentric rings of different r values, i.e. P + pixel rings, in this example 7P + pixel rings. When charged particles pass through a sensitive area of the detector, the two-dimensional position testing capability of the fan-shaped alternating type silicon pixel detector can be realized by measuring different r and theta, namely position coordinates (r, theta). In this specific example, the number of readout channels required is 7 channels for r readout, and 18 channels for θ readout, that is, 7 r readout metal connection lines 13, 18 θ readout metal connection lines 12, and 1 center position readout metal connection line 15, for a total of 26 channels.
In practical application design, θ is 1 ° or less, and in the following example 1 ° is taken to testEffective detection area of detector is 1cm2For example, if the size of a single read-out microstrip plus an isolation oxide layer of a bilateral read-out silicon microstrip detector is 10 μm, the total number of required electronic read-out channels is 1000+1000, and 2000 read-out channels are required in total; a pixel detector with a pixel size of 10 × 10 requires a total number of electronic readout channels of 1000 × 1000, for a total of 1000000; the fan-shaped alternating silicon pixel detector with the same effective detection area needs the total channel number to be 360+564+1 (the effective detection area is 1 cm)2The corresponding radius r is 0.564cm, the width of each fan-shaped pixel unit is 10um, the number of channels required for measuring different r is 564, the number of channels for measuring theta is 360, one channel corresponds to each degree, and the total number of channels is 925). By contrast, the number of readout channels required for a sector-shaped alternating silicon pixel detector is greatly reduced for the same effective detection area, and this advantage is more pronounced as the detector size increases.
The P + collection plane and the N + incidence plane 11 are formed by ion implantation, the P + pixel cell a9 and the P + pixel cell B10 of the collection plane are divided into fan-shaped pixel cells for r measurement and θ measurement, and the fan-shaped pixel cells for r measurement and θ measurement are alternately arranged. The detector is fully depleted by applying a reverse bias voltage, and an electric field is formed which is directed from the N + incident surface 11 to the P + collecting surface. When the particles are incident from the incident surface, electron-hole pairs are generated in the depletion region, the electrons drift in the direction opposite to the electric field and are collected by the N + incident surface 11, and the holes are collected by the P + pixel cell a9 and the P + pixel cell B10 in the direction of the electric field. Holes are the minority carriers detected by the fan-shaped alternating silicon pixel detector and are the carriers generating signals. The area where ionization effect is generated by particle incidence is larger than the designed pixel size, then the incident particle will generate signal in the adjacent pixel unit (generally, many pixel units will not generate signal at the same time, because in practical application, the pixel design will be made according to the measured energy range), and two adjacent pixel units must be a readout channel connecting r measurement and another readout channel connecting θ measurement, so that the position resolution capability can be realized through the coordinates of (r, θ).
The fan-shaped alternating type silicon pixel detector is prepared according to the following method:
step S1, thermal oxidation is performed to generate dense SiO on the upper and lower bottom surfaces of the wafer2An oxide layer;
step S2, performing ion implantation, in which P + ions are implanted into the upper surface of the wafer to form a P + pixel unit, and N + ions are implanted into the bottom surface of the wafer to form an N + incident surface 11;
step S3, annealing, activating implanted ions, and repairing implanted damage;
step S4, etching, and opening a contact hole of the theta reading metal connecting line 12;
step S5, sputtering a metal layer for theta measurement metal connection, and etching gold to form a theta reading metal connection line 12;
step S6, depositing a first insulating layer;
step S7, etching, and opening a contact hole connected with the central pixel reading metal;
step S8, sputtering a metal layer for central pixel measurement metal connection, and etching to form a central position reading metal connection line 15;
step S9, depositing a second insulating layer;
step S10, etching, namely opening a contact hole connected to a reading circuit on each ring of the P + pixel ring connected with the r measuring metal;
step S11, sputtering a metal layer connected to the readout circuit on each ring of the P + pixel ring for r measurement metal connection, and etching to form r readout metal connection lines 13;
step S12, etching the oxide layer of the N + incidence surface 11, and sputtering to form a metal aluminum layer;
step S13, rapid annealing;
and step S14, passivating.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.
Claims (10)
1. A fan-shaped alternating type silicon pixel detector is characterized by comprising an N-type silicon substrate (5), wherein the N-type silicon substrate (5) is of a cylindrical structure, the lower surface of the N-type silicon substrate is provided with an N + incidence surface (11), and the upper surface of the N-type silicon substrate is provided with a P + collection surface;
the P + collecting surface is composed of a P + type central pixel unit (14) and a plurality of equally-spaced fan-shaped areas which are arranged in the radial direction of the P + type central pixel unit (14), the P + type central pixel unit (14) is located in the central position of the P + collecting surface, each fan-shaped area is composed of a plurality of P + type pixel units A (9) and P + type pixel units B (10) which are alternately arranged from inside to outside, the P + type pixel units A (9) and the P + type pixel units B (10) at the same position of all the fan-shaped areas are alternately arranged at equal intervals to form a P + type pixel ring, all the fan-shaped areas form a plurality of concentric P + type pixel rings, and the number of the P + type pixel rings is equal to the total number of the P + type pixel units A (9) and the P + type pixel units B (10) contained in each fan-shaped area.
2. A sector alternating silicon pixel detector according to claim 1, wherein the central angles of the sectors are the same.
3. A sector-shaped alternating silicon pixel detector according to claim 1 or 2, characterized in that the p + -type pixel units a (9) and the p + -type pixel units B (10) of each sector-shaped area are alternately arranged at equal intervals; the distance between two adjacent p + -type pixel rings is equal to the distance between the adjacent p + -type pixel unit A (9) and p + -type pixel unit B (10).
4. A sector-shaped alternating silicon pixel detector as claimed in claim 3, characterized in that the p + -type pixel units A (9) and B (10) alternately arranged at equal intervals in each sector-shaped region are in a sector-shaped structure, and the areas of the p + -type pixel units A (9) and B (10) alternately arranged at equal intervals from the inside to the outside gradually increase.
5. A fan-shaped alternating silicon pixel detector as claimed in claim 3, characterized in that a p + -type pixel cell a (9) and a p + -type pixel cell B (10) jointly form a fan-shaped ring structure, the p + -type pixel cell a (9) and the p + -type pixel cell B (10) respectively occupy half of each fan-shaped ring structure, each of said fan-shaped regions is formed by a plurality of fan-shaped ring structures arranged from inside to outside at equal intervals, and the area of the fan-shaped ring structures is gradually increased from inside to outside.
6. A sector-shaped alternating silicon pixel detector according to claim 4 or 5, characterized in that each sector-shaped area is correspondingly connected with a theta readout metal connecting line (12), the theta readout metal connecting line (12) is in a ray shape, and each theta readout metal connecting line (12) is connected with all the p + -type pixel units A (9) or all the p + -type pixel units B (10) in the corresponding sector-shaped area.
7. A sector-shaped alternating silicon pixel detector according to claim 6, characterized in that one r readout metal connecting line (13) is connected to each P + pixel ring, the r readout metal connecting lines (13) are circular, and each r readout metal connecting line (13) is connected to all the P + type pixel cells B (10) or all the P + type pixel cells A (9) which are not connected to the theta readout metal connecting line (12) in the sector area corresponding to the r readout metal connecting line.
8. A sector shaped alternating silicon pixel detector according to claim 7, characterized in that the p + -type central pixel cell (14) is connected to a central position readout metal connection line (15).
9. A sector-shaped alternating silicon pixel detector according to claim 8, characterized in that the θ readout metal connecting lines (12), the r readout metal connecting lines (13) and the center readout metal connecting lines (15) are respectively located on different planes, and are separated by an insulating layer.
10. A sector alternating silicon pixel detector according to any one of claims 1, 2 or 7 to 9, characterized in that the N + incident surface (11) is composed of a heavily doped N + layer and a metallic aluminum layer on its surface.
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| CN111863846A (en) * | 2020-07-23 | 2020-10-30 | 湖南正芯微电子探测器有限公司 | Fan-shaped alternating silicon pixel detector |
| CN111863846B (en) * | 2020-07-23 | 2024-05-28 | 湖南脉探芯半导体科技有限公司 | Fan-shaped alternating silicon pixel detector |
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