CN212343736U - High-frequency-band terahertz receiving front-end circuit - Google Patents
High-frequency-band terahertz receiving front-end circuit Download PDFInfo
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Abstract
The utility model discloses a high-band terahertz receives front-end circuit, terahertz receives the circuit structure of front-end including mixing structure, doubling structure and output DC/IF pad terahertz, and the frequency multiplier structure is including connecting gradually local oscillator input probe, first low pass filter, first transmission line, nonlinear schottky diode to the structure; the mixing structure comprises: the terahertz signal detection circuit comprises a radio frequency receiving end, a Schottky diode, a matching circuit and a second low-pass filter, wherein the radio frequency receiving end receives an external terahertz signal, and the output end DC/IF bonding pad feeds in direct current bias; the local oscillator signal of single-stage nine-time frequency structure frequency multiplication is mixed with the received terahertz signal through the frequency mixing structure through the matching circuit, and finally filtered through the low-pass filter and then output through the DC/IF bonding pad. The utility model relates to a front end simple structure is received to terahertz high frequency channel now, high integration, high conversion gain, and have lower noise and consumption.
Description
Technical Field
The utility model relates to a terahertz technical field, concretely relates to high-band terahertz receiving front-end circuit.
Background
Terahertz waves (0.1-10 THz) are transition regions of macroscopic electronics and microscopic photonics, are frequency bands which are only existed in electromagnetic spectrum and are not developed comprehensively at present, and have the advantages that the research theory is between the mature microwave electronics theory and the optical theory due to the positions of the terahertz waves, and the terahertz waves show many excellent properties. The terahertz technology has very important academic and application values in relevant fields such as national defense and military, biomedical, astronomical meteorology, wireless communication and the like.
Due to the characteristics of penetrability, safety, transient property and the like of terahertz waves, the terahertz wave detector has the great advantages in the aspect of detection technology, is high in sensitivity, high in integration degree, low in noise, and integrates detection of amplitude, phase and polarization information, and is a key problem to be researched and broken through. At present, although terahertz detection technology is developed in China, most of the terahertz detection technology is in a relatively low-frequency band, the power and the frequency doubling efficiency are relatively low due to the restriction of factors such as incomplete diode models and insufficient power of driving sources, and the terahertz detection technology with a high frequency band of more than 800GHz is not available in China at present.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that prior art high-frequency section terahertz receiving front end's integrated level is poor, the gain is low, the loss is high, lacks a high-efficient low noise high-frequency section terahertz source, and aim at provides a high-frequency section terahertz receiving front end circuit, the utility model relates to a terahertz high-efficient terahertz high-frequency section receiving front end of low noise more than 800GHz, signal source and the local oscillator signal mixing through nine frequency doubling accomplish terahertz higher frequency channel signal demodulation, the utility model discloses a terahertz high-frequency section receiving front end simple structure, the integrated level is high, lower noise and loss have higher gain.
The utility model discloses a following technical scheme realizes:
a high-frequency-band terahertz receiving front-end circuit is characterized in that a circuit structure of the receiving front-end comprises a frequency mixing structure, a frequency doubling structure and an output end, wherein the frequency doubling structure comprises a local oscillator input probe, a first low-pass filter and a first transmission line which are sequentially connected, and the receiving front-end circuit further comprises a nonlinear Schottky diode pair structure, the nonlinear Schottky diode pair structure adopts a single-stage same-direction parallel structure, and adopts nine times of frequency to an input local oscillator signal to obtain a high-frequency-band terahertz fundamental wave; the nonlinear Schottky diode pair structure is arranged on two sides of the first transmission line, and in order to reduce noise and increase the integration level, single-stage frequency multiplication is adopted; the two sides of the nonlinear Schottky diode pair structure (namely the Schottky diode pairs connected in parallel in the same direction) are connected with the grounding port without connecting elements such as impedance, capacitance and the like, so that the Schottky diode pairs perform nonlinear work according to an input signal source and reduce noise;
the frequency mixing structure comprises a radio frequency receiving end, a Schottky diode, a grounding port, a matching circuit and a second low-pass filter, wherein the first low-pass filter is connected with the matching circuit through a first transmission line, the matching circuit is connected with the anode of the Schottky diode, and the cathode of the Schottky diode is connected with the grounding port; the radio frequency receiving end is connected with the anode of the Schottky diode and is also connected with the second low-pass filter;
the output end is connected with the second low-pass filter; the local oscillator input probe is externally connected with an input waveguide, the radio frequency receiving end is connected with an external terahertz signal, and the output end is connected with a direct current diode bias voltage and an external output waveguide through an IF/DC bonding pad.
The working principle is as follows:
the utility model discloses the circuit structure of terahertz receiving front end combines doubling of frequency structure and mixing structure to realize, mixing structure adopts simple structure optimal design because of terahertz high frequency characteristic now, at first, inputs low frequency waveguide signal through the local oscillator input probe, carries out the filtering through first low pass filter; the filtered signals pass through a nonlinear Schottky diode pair structure to obtain signals with nine times of frequency harmonic components, the nonlinear Schottky diode pair structure adopts a parallel grounding mode, and the structure reduces coupling effect and noise; secondly, the signal is filtered through a matching circuit and matched with the impedance of a mixer, the terahertz fundamental wave after the frequency multiplication is mixed with the received terahertz signal through a grounded Schottky diode which is connected in parallel, filtering is carried out through a second low-pass filter, and finally a demodulation signal is obtained and output. Specifically, the method comprises the following steps:
through direct current bias fed in an IF/DC bonding pad at an output end, bias working voltage is loaded to Schottky diodes connected in parallel at two sides through a first transmission line and the input fundamental wave signal is coupled to the center through a nonlinear Schottky diode in a bias state, and an output signal with nine times of frequency harmonic components is formed; and filtering and removing spurious signals outside the nine-time frequency through the matching circuit and matching the impedance of the mixer. And obtaining a high-frequency-band output signal of the nine-time frequency harmonic component. Similarly, a Schottky diode in the frequency mixing structure is in a working bias state through direct current bias fed in from an output end IF/DC bonding pad, a terahertz receiving signal and a fundamental wave signal are subjected to frequency mixing through the Schottky diode to form nonlinear waves, other harmonic waves are filtered through a second low-pass filter, and a demodulation spectrum of the RF-LO is output.
The nine-frequency-multiplication nonlinear Schottky diode pair adopts a structure of parallel connection in the same direction, the bias circuit is relatively flexible to load, the structure is simple, the noise coupling is reduced, the loss is low, and the requirements on the overall processing and assembly are low; the two sides of the Schottky diode pair of the nonlinear Schottky diode pair structure are respectively grounded and are not connected with other related electronic devices, so that noise interference and delay effect caused by other devices are reduced; frequency multiplication structure and mixing structure's schottky diode biasing direct current source feeds in through the output, simple structure, and easy integration reduces the noise.
The utility model discloses a terahertz is high-efficient terahertz of low noise at high frequency band's receipt front end more than 800GHz of terahertz high frequency band, signal source through with the local oscillator signal mixing through nine frequency doubling, accomplish terahertz and have higher frequency band signal demodulation now, the utility model discloses a terahertz is high-frequency band and is received front end simple structure now, and the integrated level is high, has lower noise and loss.
Preferably, the input signal frequency of the local oscillator input probe is 94 GHz.
Preferably, the nonlinear schottky diode pair structure includes a first schottky diode and a second schottky diode, one side of the first transmission line is connected to the anode of the first schottky diode, the other side of the first transmission line is connected to the anode of the second schottky diode, and the cathode of the first schottky diode and the cathode of the second schottky diode are both connected to the ground port.
Preferably, the first schottky diode and the second schottky diode are both high-frequency schottky diodes.
Preferably, the first schottky diode and the second schottky diode in the nonlinear schottky diode pair structure are both directly grounded.
Preferably, the diameters of the first Schottky diode and the second Schottky diode are both 1 μm small, so that the frequency characteristic is improved.
Preferably, the first low-pass filter, the second low-pass filter and the matching circuit are all in the form of high-low impedance lines.
Preferably, the circuit structures of the receiving front end are all manufactured by adopting a GaAs compound semiconductor process, and GaAs substrates with higher dielectric constant and better performance are adopted.
Preferably, said DC diode bias voltage is applied to the output, i.e. fed through the DC/IF pad, i.e. the bias voltage is fed through the DC/IF pad. This structure can reduce coupling and noise interference.
Compared with the prior art, the utility model, following advantage and beneficial effect have:
1. the utility model discloses based on terahertz high frequency characteristic, mixing and doubling of frequency structure schottky diode all adopts the optimal design, makes the bias voltage input design nimble, simple structure; the frequency multiplier adopts a single-stage nine-frequency multiplication form, the Schottky diode pair adopts a same-direction parallel structure, and the Schottky diode pair of a mixing structure adopts a parallel grounding structure, so that a bias direct-current end can be directly loaded through an output end, the mechanism complexity is reduced, the noise interference is lower, the loss is lower, and the terahertz high-frequency band characteristic is suitable.
2. The utility model designs a terahertz high frequency band by integrating the frequency doubling and mixing structure circuit optimization design, and has a terahertz technology receiving front-end circuit structure with higher gain, low noise and low loss; the circuit structure of the receiving front end comprises a frequency mixing structure, a frequency doubling structure and an output end, wherein the frequency doubling structure adopts a single-stage nine-frequency doubling form, is based on a Schottky diode equidirectional parallel structure, and is directly connected to the ground at two sides respectively so as to reduce noise; the frequency mixing structure Schottky diode adopts a parallel connection structure, is directly connected to the ground, is connected with a frequency doubling structure through a matching circuit, is loaded at an output end by direct current bias, and cannot cause interference on direct current voltage due to a low-pass filter due to high-frequency alternating current signals.
3. The utility model discloses a circuit structure of front end is received to terahertz high-frequency band now, its gain is higher, the low noise, the low loss, simple structure is easily integrated and the assembly, is applicable to the high-frequency band above ~ 800GHz, and its simulation result has verified the utility model discloses terahertz is received the high gain and the low noise characteristic of front end now.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
fig. 1 is the utility model relates to a high-band terahertz receiving front-end circuit diagram.
Fig. 2 is the utility model relates to a high-band terahertz receiving front-end circuit design.
Fig. 3 is a circuit simulation result diagram of the present invention.
Reference numbers and corresponding part names in the drawings:
the device comprises a 1-local oscillator input probe, a 2-first low-pass filter, a 3-first transmission line, a 4-nonlinear Schottky diode pair structure, a 40-first Schottky diode, a 41-second Schottky diode, a 5-radio frequency receiving end, a 6-Schottky diode, a 7-matching circuit and an 8-second low-pass filter.
Detailed Description
To make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the following examples and drawings, and the exemplary embodiments and descriptions thereof of the present invention are only used for explaining the present invention, and are not intended as limitations of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to one of ordinary skill in the art that: it is not necessary to employ these specific details to practice the invention. In other instances, well-known structures, circuits, materials, or methods have not been described in detail so as not to obscure the present invention.
Throughout the specification, reference to "one embodiment," "an embodiment," "one example," or "an example" means: the particular features, structures, or characteristics described in connection with the embodiment or example are included in at least one embodiment of the present invention. Thus, the appearances of the phrases "one embodiment," "an embodiment," "one example" or "an example" in various places throughout this specification are not necessarily all referring to the same embodiment or example. Furthermore, the particular features, structures, or characteristics may be combined in any suitable combination and/or sub-combination in one or more embodiments or examples. Further, those of ordinary skill in the art will appreciate that the illustrations provided herein are for illustrative purposes and are not necessarily drawn to scale. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
In the description of the present invention, the terms "front", "back", "left", "right", "up", "down", "vertical", "horizontal", "high", "low", "inner", "outer", etc. indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the scope of the present invention.
Examples
As shown in fig. 1 to fig. 3, the utility model relates to a high-frequency band terahertz receiving front-end circuit, the circuit structure of receiving front-end includes mixing structure, frequency multiplication structure and output, the frequency multiplication structure includes local oscillator input probe 1, first low pass filter 2 and the first transmission line 3 that connect gradually, still includes nonlinear schottky diode to structure 4, nonlinear schottky diode adopts single-stage syntropy parallel structure to structure 4, adopts nine frequency doubling to the input signal, obtains high-frequency band terahertz fundamental wave; the nonlinear Schottky diode pair structures 4 are arranged on two sides of the first transmission line 3, and in order to reduce noise and improve integration level, single-stage frequency multiplication is adopted; the two sides of the nonlinear schottky diode pair structure 4 (i.e. the schottky diode pairs connected in parallel in the same direction) are both connected with a grounding port, and components such as impedance, capacitance and the like are not connected, so that the schottky diode pairs perform nonlinear work according to an input signal source, and noise is reduced;
the frequency mixing structure comprises a radio frequency receiving end 5, a Schottky diode 6, a grounding port, a matching circuit 7 and a second low-pass filter 8, wherein the first low-pass filter 2 is connected with the matching circuit 7 through a first transmission line 3, the matching circuit 7 is connected with the anode of the Schottky diode 6, and the cathode of the Schottky diode 6 is connected with the grounding port; the radio frequency receiving end 5 is connected with the anode of the Schottky diode 6, and the radio frequency receiving end 5 is also connected with the second low-pass filter 8;
the output end is connected with the second low-pass filter 8; the local oscillator input probe 1 is externally connected with an input waveguide, the radio frequency receiving end 5 is connected with an external terahertz signal, and the output end is connected with a direct current diode bias voltage and an external output waveguide through an IF/DC bonding pad. And the DC/IF bonding pad of the output end is fed with direct current bias by the DC/IF bonding pad to output signals.
As a further preferable scheme, the frequency of the input signal of the local oscillator input probe 1 is 94 GHz.
As a further preferable scheme, the nonlinear schottky diode pair structure 4 includes a first schottky diode 40 and a second schottky diode 41, one side of the first transmission line 3 is connected to the anode of the first schottky diode 40, the other side of the first transmission line 3 is connected to the anode of the second schottky diode 41, and the cathode of the first schottky diode 40 and the cathode of the second schottky diode 41 are both connected to the ground port.
Preferably, the first schottky diode 40 and the second schottky diode 41 both use high-frequency schottky diodes.
As a further preferred solution, the first schottky diode and the second schottky diode in the nonlinear schottky diode pair structure 4 are both directly grounded.
Preferably, the first schottky diode 40 and the second schottky diode 41 each have a diameter of 1 μm and are small in size, thereby improving frequency characteristics.
Preferably, the first low-pass filter 2, the second low-pass filter 8 and the matching circuit 7 are all in the form of high-low impedance lines.
As a further preferable scheme, the circuit structures of the receiving front end are all manufactured by adopting a GaAs compound semiconductor process, and a GaAs substrate with a higher dielectric constant and better performance is adopted.
As a further preferred solution, said DC diode bias voltage is applied to the output, i.e. via the DC/IF pad, i.e. the bias voltage is fed from the DC/IF pad. This structure can reduce coupling and noise interference.
The working principle is as follows:
the utility model discloses the circuit structure of terahertz receiving front end combines doubling of frequency structure and mixing structure to realize, mixing structure adopts simple structure optimal design because of terahertz high frequency characteristic now, at first, inputs low frequency waveguide signal through local oscillator input probe 1, carries out the filtering through first low pass filter 2; the filtered signal passes through a nonlinear Schottky diode pair structure 4, the nonlinear Schottky diode pair structure 4 adopts a parallel grounding mode, the structure reduces the coupling effect, reduces the noise and obtains a high-frequency signal; secondly, the high-frequency signal mixes the terahertz fundamental wave after the frequency multiplication and the received terahertz signal through a matching circuit 7 through a grounded Schottky diode connected in parallel, filtering is carried out through a second low-pass filter 8, and finally a demodulation signal is obtained and output. Specifically, the method comprises the following steps:
through direct current bias fed in an output end IF/DC bonding pad, bias working voltage is loaded to Schottky diodes connected in parallel on two sides through a first transmission line 3, an input fundamental wave signal is coupled to the center through a nonlinear Schottky diode in a bias state, and an output signal with nine times of frequency harmonic components is formed; filtering and impedance matching are performed again by the matching circuit 7. An output signal having harmonic components in the high frequency band is obtained. Similarly, a schottky diode in the frequency mixing structure is in a working bias state through direct current bias fed in from an output end IF/DC bonding pad, a terahertz receiving signal and a fundamental wave signal are subjected to frequency mixing through the schottky diode to form nonlinear waves, other harmonic waves are filtered through a second low-pass filter 8, and a demodulation spectrum of RF-LO is output.
The nona-frequency-doubled nonlinear Schottky diode pair structure 4 adopts a parallel connection structure in the same direction, the bias circuit is relatively flexible to load, the structure is simple, the noise coupling is reduced, and the requirements on the overall processing and assembly are low; the two sides of the Schottky diode pair of the nonlinear Schottky diode pair structure 4 are respectively grounded and are not connected with other related electronic devices, so that noise interference and delay effect caused by other devices are reduced; frequency multiplication structure and mixing structure's schottky diode biasing direct current source feeds in through the output, simple structure, and easy integration reduces the noise.
The utility model discloses a front end is received to terahertz high-frequency section more than 800GHz high-efficient terahertz of low noise now high-frequency section now, the signal source through with the local oscillator signal mixing through nine frequency doubling, accomplish terahertz higher frequency channel signal demodulation now, the utility model discloses a front end is received to terahertz high-frequency section now simple structure, and the integrated level is high, has lower noise and loss.
When in implementation: the circuit structure chart is as shown in fig. 1, for increasing the design efficiency and reducing the processing difficulty, and because the GaAs substrate with higher dielectric constant is adopted, the defect of larger size of the high-low impedance line can be compensated to a certain extent, therefore, the utility model discloses a middle first low-pass filter 2, second low-pass filter 8 and matching circuit 7 (adopt traditional high-low impedance line form, low-pass filter except filtering, can also prevent the higher harmonic that the later diode frequency multiplication produced from leaking to the input.)
The working process is as follows: the input waveguide passes through local oscillator input probe 1 input LO fundamental wave, and the fundamental wave passes through 2 filtering of first low pass filter, gets rid of spurious frequency signal, forms the signal that the frequency is more single, through schottky diode centering coupling under the bias voltage of syntropy parallelly connected, forms the nonlinear wave that has nine times frequency harmonic component, through matching circuit 7, other spurious frequency signal of filtering to with mixing structure matched impedance. In the mixing structure, a radio frequency receiving end 5 receives a high-frequency terahertz wave spectrum carrying signals, the high-frequency terahertz wave spectrum is mixed with a frequency-doubled LO fundamental wave signal input from a matching circuit 7 through a non-linear device Schottky diode 6 to obtain a non-linear wave spectrum with RF-LO harmonic components, a demodulation signal of the RF-LO harmonic components is obtained through a second low-pass filter 8, and the demodulation signal is output through an output end and a DC/IF pad.
The utility model discloses a front end is received to circuit of high-efficient terahertz high-frequency channel of a section low noise, should receive the nine times of front end base on single-stage schottky diode syntropy parallel structure frequently the structure with parallelly connected ground connection's mixing structure, frequency doubling structure and mixing structure schottky diode offset voltage all follow DC IF pad output feed-in. The terahertz high-frequency band receiving front-end circuit is simple in structure, high in integration level and capable of being used for a higher frequency band.
The results of the circuit simulation are shown in fig. 3 and table 1, where (a) in fig. 3 is the conversion gain; (b) a noise thermometer; the simulation result is as follows: in the range of 830GHz-870GHz, the conversion gain is 25dB-40 dB; the noise temperature was 5700K-5800K with a minimum of 5700K at 830 GHz.
TABLE 1 simulation test results
| Intrinsic input Power 94GHz (dBm) | 30 |
| Radio frequency input power 850GHz (dBm) | -30 |
| Conversion gain (dB) | 25-40 |
| Temperature noise (T) | 5700-5800 |
The above-mentioned embodiments, further detailed description of the objects, technical solutions and advantages of the present invention, it should be understood that the above description is only the embodiments of the present invention, and is not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. The high-frequency-band terahertz receiving front-end circuit is characterized in that a circuit structure of the receiving front end comprises a frequency mixing structure, a frequency doubling structure and an output end, wherein the frequency doubling structure comprises a local oscillator input probe (1), a first low-pass filter (2) and a first transmission line (3) which are sequentially connected, the circuit structure further comprises a nonlinear Schottky diode pair structure (4), the nonlinear Schottky diode pair structure (4) adopts a single-stage homodromous parallel connection structure, the nonlinear Schottky diode pair structure (4) is arranged on two sides of the first transmission line (3), and two sides of the nonlinear Schottky diode pair structure (4) are both connected with a grounding port;
the frequency mixing structure comprises a radio frequency receiving end (5), a Schottky diode (6), a grounding port, a matching circuit (7) and a second low-pass filter (8), wherein the first low-pass filter (2) is connected with the matching circuit (7) through a first transmission line (3), the matching circuit (7) is connected with the anode of the Schottky diode (6), and the cathode of the Schottky diode (6) is connected with the grounding port; the radio frequency receiving end (5) is connected with the anode of the Schottky diode (6), the radio frequency receiving end (5) is also connected with the second low-pass filter (8), and the second low-pass filter (8) is connected with the output end;
the local oscillator input probe (1) is externally connected with an input waveguide, the radio frequency receiving end (5) is connected with an external terahertz signal, and the output end is connected with a direct current diode bias voltage and an external output waveguide through an IF/DC bonding pad.
2. The high-band terahertz receiving front-end circuit according to claim 1, wherein the input signal frequency of the local oscillator input probe (1) is 94 GHz.
3. The high-band terahertz receiving front-end circuit according to claim 1, wherein the nonlinear schottky diode pair structure (4) comprises a first schottky diode (40) and a second schottky diode (41), one side of the first transmission line (3) is connected to a positive electrode of the first schottky diode (40), the other side of the first transmission line (3) is connected to a positive electrode of the second schottky diode (41), and a negative electrode of the first schottky diode (40) and a negative electrode of the second schottky diode (41) are both connected to a ground port.
4. A high-band thz receiving front-end circuit according to claim 3, wherein the first schottky diode (40) and the second schottky diode (41) are both high-frequency schottky diodes.
5. A high-band terahertz receiving front-end circuit according to claim 3, wherein the first schottky diode (40) and the second schottky diode (41) in the nonlinear schottky diode pair structure (4) are both directly grounded.
6. The high-band terahertz receiving front-end circuit according to claim 3, wherein the first Schottky diode (40) and the second Schottky diode (41) each have a diameter size of 1 μm.
7. The high-band terahertz receiving front-end circuit according to claim 1, wherein the first low-pass filter (2), the second low-pass filter (8) and the matching circuit (7) are all in the form of high-low impedance lines.
8. The high-band terahertz receiving front-end circuit according to claim 1, wherein the circuit structures of the receiving front-end are all manufactured by using a GaAs compound semiconductor process.
9. The high-band terahertz receiving front-end circuit according to claim 1, wherein the direct current diode bias voltage is applied to an output terminal, namely fed through a DC/IF pad.
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| CN111934624A (en) * | 2020-08-19 | 2020-11-13 | 航天科工通信技术研究院有限责任公司 | Circuit structure of high-frequency-band terahertz receiving front end |
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| CN111934624A (en) * | 2020-08-19 | 2020-11-13 | 航天科工通信技术研究院有限责任公司 | Circuit structure of high-frequency-band terahertz receiving front end |
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