CN212305303U - X Band six-digit numerical control phase shifter - Google Patents

X Band six-digit numerical control phase shifter Download PDF

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CN212305303U
CN212305303U CN202021282249.3U CN202021282249U CN212305303U CN 212305303 U CN212305303 U CN 212305303U CN 202021282249 U CN202021282249 U CN 202021282249U CN 212305303 U CN212305303 U CN 212305303U
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triode
drain
source
electrode
resistor
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刘润彬
黄军恒
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Hefei Silicon Valley Microelectronics Co.,Ltd.
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Hefei Ic Valley Microelectronics Co ltd
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Abstract

The utility model belongs to the technical field of the looks ware technique and specifically relates to a six numerical control of X Band move looks ware, 6 move the looks unit and connect gradually and form, move the looks value respectively be-90, -45, -11.25, -22.5, -5.625, -180, used 2 kinds of circuit structure, T type filter type structure and embedded switch filter type structure altogether. The simplified T-shaped phase shifting structure is adopted at-5.625 degrees, -11.25 degrees and-22.5 degrees. Because the phase shift value of the-45-degree phase shift unit is relatively large, the phase shift unit cannot be realized only by a phase shift channel of a low-pass filter, and a capacitor is connected in series with the reference channel to lead the phase of a reference state, so that the-45-degree phase shift value is obtained during channel switching. The phase shift values of 90 degrees below zero and 180 degrees below zero are large, an embedded switch filter type structure is adopted, and when the pHEMT is in an on state and an off state, the network is equivalent to an LC high-pass or low-pass filter to realize the phase shift function.

Description

X Band six-digit numerical control phase shifter
Technical Field
The utility model relates to a move looks ware technical field, specifically be a six numerical control of X Band move looks ware.
Background
In the field of traditional phase shifters, a T-type filter structure and an embedded switch filter structure are adopted; the simplified T-shaped structure is only suitable for small phase shift quantity, and the bandwidth is narrowed and the precision is poorer along with the increase of the phase shift quantity; the embedded switch structure is suitable for a unit with large phase shift quantity, but standing waves are not ideal, and the large standing waves can influence the parameters of the whole circuit.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a six numerical control of X Band move looks ware to solve the problem that proposes in the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme:
the utility model provides a six numerical control phase shifters of X Band, contains 6 phase shifting units, and 6 phase shifting units connect gradually and form, and the phase shift value is respectively-90 °, -45 °, -11.25 °, -22.5 °, -5.625 °, -180 °, and every phase shifting unit port impedance is 50 Ω, wherein: -5.625 °, -11.25 °, -22.5 °, -45 ° use a simplified T-type phase shift structure, -90 ° and-180 ° use an embedded switch filter type structure.
Preferably, the-5.625 ° phase shift structure comprises two triodes, wherein the grid of the first triode is connected to the control terminal through a resistor, the source serves as a signal input terminal, the drain serves as a signal output terminal, two inductors are connected between the source and the drain in series, the grid of the second triode is connected to the control terminal through a resistor, the drain is connected between the two inductors, the source is grounded through another inductor, and a resistor is connected between the source and the drain in series.
Preferably, the-11.25 ° and-22.5 ° phase shift structure comprises three triodes, wherein the gate of the first triode is connected to the control terminal through a resistor, the source serves as a signal input terminal, the drain serves as a signal output terminal, two inductors are connected in series between the source and the drain, the gate of the second triode is connected to the control terminal through a resistor, the drain is connected to the two inductors, a resistor is connected in series between the source and the drain, the source is connected to the drain of the third triode, the source of the third triode is grounded, the gate is connected to the control terminal through a resistor, and the drain is grounded through another inductor.
Preferably, the-45 ° phase shift structure comprises five triodes, wherein the gate of each triode is connected to the control terminal through a resistor, the source of the first triode is used as the signal input terminal, the drain of the first triode is connected with the source of the second triode, the source of the third triode is connected with the drain of the second triode, the drain of the third triode is used as the signal output terminal, the resistor and two inductors are connected in parallel between the source of the second triode and the drain, the drain of the fourth triode is connected between the two inductors, the source of the fourth triode is connected with the drain of the fifth triode and finally grounded through the inductors, and the source of the fifth triode is grounded.
Preferably, the-90-degree phase shifting structure comprises six triodes, wherein a grid electrode of each triode is connected to a control end through a resistor, a source electrode of a first triode is connected with a capacitor and then connected with a source electrode of a fourth triode through an inductor to be used as a signal input end, a drain electrode of the first triode is connected with a source electrode of a second triode, a drain electrode of the second triode is connected with a capacitor and then connected with a drain electrode of a fifth triode through an inductor to be used as a signal output end, a drain electrode of a third triode is connected between the connection of the second triode and the connection of the third triode, a source electrode of the third triode is grounded, a resistor is connected between the source electrode and the drain electrode in series, two inductors which are connected in series are connected between the source electrode of the fourth triode and the drain electrode of the fifth triode, a drain electrode of the sixth triode is connected between the connection of the fourth triode and the fifth triode, and a, and the source is grounded.
Preferably, the-180-degree phase shifting structure comprises six triodes, wherein a grid electrode of each triode is connected to a control end through a resistor, a source electrode of a first triode is connected with a capacitor and then connected with a source electrode of a fourth triode through an inductor to be used as a signal input end, a drain electrode of the first triode is connected with a source electrode of a second triode, a drain electrode of the second triode is connected with a capacitor and then connected with a drain electrode of a fifth triode through an inductor to be used as a signal output end, a drain electrode of a third triode is connected between the connection of the second triode and the connection of the third triode, a source electrode of the third triode is grounded, an inductor is connected between the source electrode and the drain electrode in series, two inductors connected in series are connected between the source electrode of the fourth triode and the drain electrode of the fifth triode, a drain electrode of the sixth triode is connected between the connection of the fourth triode and the connection of the fifth triode, and, and the source is grounded.
Compared with the prior art, the beneficial effects of the utility model are that:
the utility model discloses the core device is the numerical control phase shifter chip, moves the looks ware and comprises six independently controllable fixed phase shifting positions, adopts the high low pass filter network of on-off formula as the unit that moves phase to pHEMT pipe controls the reference that moves the unit and moves the state with moving phase of moving phase respectively as the switch with moving the looks ware. The small phase shift of-5.625 degrees is placed at the middle position of the chip, and the good phase shift of the standing wave is arranged at the input end and the output end, so that the influence of the large standing wave on the whole circuit parameter is reduced as much as possible.
Drawings
FIG. 1 is a schematic view of a-5.625T-shaped phase shift structure of the present invention;
FIG. 2 is a schematic view of the phase shift structure of-11.25 DEG, -22.5 DEG according to the present invention;
FIG. 3 is a schematic view of a-45 degree phase shift structure of the present invention;
FIG. 4 is a schematic view of the-90 degree phase shift structure of the present invention;
FIG. 5 is a schematic view of a-180 degree phase shift structure of the present invention;
FIG. 6 is a schematic block diagram of an X Band phase shifter chip according to the present invention;
FIG. 7 is a schematic diagram of the return loss of a 64-state input according to the present invention;
FIG. 8 is a schematic diagram of the return loss of the 64-state output according to the present invention;
FIG. 9 is a schematic diagram of a reference state insertion loss according to the present invention;
FIG. 10 is a schematic diagram of phase shift accuracy (RMS) using the present invention;
fig. 11 is a schematic diagram of parasitic amplitude modulation according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1 to 11, the present invention provides a technical solution:
an X Band six-bit numerical control phase shifter comprises 6 phase shifting units; the phase-shifting filter is formed by sequentially connecting 6 phase-shifting units, wherein the phase-shifting values are respectively-5.625 degrees, -11.25 degrees, -22.5 degrees, -45 degrees, -90 degrees and-180 degrees, the impedance of each phase-shifting unit port is 50 omega, and 2 circuit structures, a T-shaped filter type structure and an embedded switch filter type structure are commonly used. The simplified T-shaped phase shift structure is adopted at-5.625 degrees, -11.25 degrees, -22.5 degrees and-45 degrees. The-5.625 phase shifting structure is shown in fig. 1. The-11.25 ° and-22.5 ° phase shifting structures are shown in fig. 2. Because the phase shift value of the-45 DEG phase shift unit is relatively large, the phase shift unit cannot be realized only by a phase shift channel of a low-pass filter, and capacitors (C11, C12) are connected in series with the reference channel to lead the phase of a reference state, so that the-45 DEG phase shift value is obtained when the channels are switched. The-45 phase shifting structure is shown in fig. 3. The phase shift values of-90 DEG and-180 DEG are larger, an embedded switch filter type structure is adopted, when the pHEMT is in an on state and an off state, a network is equivalent to an LC (C11, L1; C12, L2) high-pass or low-pass filter to realize the phase shift function, and because the pHEMT tube is equivalent to a capacitor under the off state, the capacitor is considered into the LC filter in the design, so that circuit elements are fully adopted, and the design is more miniaturized. The-90 degree phase shift diagram is shown in figure 4, and the-180 degree phase shift diagram is shown in figure 5. By controlling the switching state of each cell by C1-C5, NC 2-NC 6, each cell switches between a basic state and a phase-shifted state, thereby achieving a combination of different phase-shifted amounts, as shown in fig. 6.
Specifically, as shown IN fig. 1, the-5.625 ° phase shift structure includes two transistors, where a gate of a first transistor T1 is connected to the control terminal C1 through a resistor R1, a source serves as the signal input terminal IN, a drain serves as the signal output terminal OUT, two inductors L1 and L2 are connected IN series between the source and the drain, a gate of a second transistor T2 is connected to the control terminal C1 through a resistor R2, the drain is connected to a position between the two inductors L1 and L2, the source is grounded through another inductor L3, and a resistor R3 is connected IN series between the source and the drain.
Specifically, as shown IN fig. 2, the phase shift structures at-11.25 ° and-22.5 ° include three transistors, IN which the gate of the first transistor T1 is connected to the control terminal C2(C3) through a resistor R1, the source serves as the signal input terminal IN, the drain serves as the signal output terminal OUT, two inductors L1 and L2 are connected IN series between the source and the drain, the gate of the second transistor T2 is connected to the control terminal C2(C3) through a resistor, the drain is connected to the two inductors L1 and L2, a resistor R3 is connected IN series between the source and the drain, the source is connected to the drain of the third transistor T3, the source of the third transistor T3 is grounded, the gate is connected to the control terminal C2(C3) through a resistor R2, and the drain is connected to the ground through another inductor L3.
Specifically, as shown IN fig. 3, the-45 ° phase shift structure includes five transistors (T1 to T5), wherein the gate of each transistor is connected to the control terminal (C4, NC4) through resistors (R1, R2, R7), the source of the first transistor T4 is used as the signal input terminal IN, the drain of the first transistor T1 is connected to the source of the second transistor T1, the source of the third transistor T5 is connected to the drain of the second transistor T1, the drain of the third transistor T5 is used as the signal output terminal OUT, the source of the second transistor T1 is connected to the drain IN parallel with a resistor R0 and two inductors L1, L2, the drain of the fourth transistor T2 is connected to the two inductors L1, L2, the source of the fourth transistor T2 is connected to the drain of the fifth transistor T3 and finally grounded through an inductor L3, and the source of the fifth transistor is grounded.
Specifically, as shown IN fig. 4, the-90 ° phase shift structure includes six transistors (T1 to T6), wherein the gate of each transistor is connected to the control terminal (C5, NC5) through a resistor (R1, R2, R4, R5, R6, R7), the source connection capacitor C11 of the first transistor T1 and the source connection inductor L1 of the fourth transistor T4 are connected together as the signal input terminal IN, the drain of the first transistor T1 and the source of the second transistor T2 are connected together, the drain connection capacitor C2 of the second transistor T2 and the drain connection inductor L2 of the fifth transistor T2 are connected together as the signal output terminal OUT, the drain of the third transistor T2 is connected between the second and third transistors (T2, T2), the source of the third transistor T2 is grounded, and the source and drain of the resistor R2, the drain of the fourth transistor T2 and the drain of the fifth transistor T2 are connected IN series, l4, the drain of the sixth triode T6 is connected between the connections of the fourth and fifth triodes (T4, T5), a resistor R8 is connected between the source and the drain in series, and the source is grounded.
Specifically, as shown IN fig. 5, the-180 ° phase shift structure includes six transistors (T1 to T6), wherein the gate of each transistor is connected to the control terminal (C6, NC6) through a resistor (R1, R2, R4, R5, R6, R7), the source connection capacitor C11 of the first transistor T1 and the source connection inductor L1 of the fourth transistor T4 are connected together as the signal input terminal IN, the drain of the first transistor T1 and the source of the second transistor T2 are connected together, the drain connection capacitor C2 of the second transistor T2 and the drain connection inductor L2 of the fifth transistor T2 are connected together as the signal output terminal OUT, the drain of the third transistor T2 is connected between the second and third transistors (T2, T2), the source of the third transistor T2 is grounded, and the source and drain of the first transistor T2 are connected IN series with the drain of the fourth transistor T2 and the drain of the second transistor T2, l4, the drain of the sixth triode T6 is connected between the connections of the fourth and fifth triodes (T4, T5), a resistor R8 is connected between the source and the drain in series, and the source is grounded.
Specifically, the phase shift unit is formed by sequentially connecting 6 phase shift units, and the impedance of a port of each phase shift unit is 50 Ω. Each phase shift unit is specifically connected as follows: -the 90 ° unit signal output terminal OUT is connected to the-45 ° unit signal input terminal IN, -the 45 ° unit signal output terminal OUT is connected to the-11.25 ° unit signal input terminal IN, -the 11.25 ° unit signal input terminal output terminal OUT is connected to the-22.5 ° unit signal input terminal IN, -the 22.5 ° unit signal output terminal OUT is connected to the-5.625 ° unit signal input terminal IN, -the 5.625 ° unit signal output terminal OUT is connected to the-180 ° unit signal input terminal IN; while the-90 unit signal input terminal IN serves as the input terminal IN of the entire phase shifter and the-180 unit signal output terminal OUT serves as the output terminal OUT of the entire phase shifter. And the transistors T1-T6 are based on pHEMT tubes.
Referring to fig. 6, the phase-shifting filter comprises 6 phase-shifting units, namely-90 °, -45 °, -11.25 °, -22.5 °, -5.625 °, -180 °, and the impedance of each phase-shifting unit port is 50 Ω, and 2 circuit structures, namely a T-type filter structure and an embedded switch filter structure, are used together. The simplified T-shaped phase shift structure is adopted at-5.625 degrees, -11.25 degrees, -22.5 degrees and-45 degrees. The phase shift values of 90 degrees and 180 degrees are larger, an embedded switch filter type structure is adopted, when the pHEMT is in an on state and an off state, a network is equivalent to an LC high-pass or low-pass filter to realize the phase shift function, and because the pHEMT tube is equivalent to a capacitor under the condition of being turned off, the capacitor is considered into the LC filter in the design, so that circuit elements are fully adopted, and the design is more miniaturized. By controlling the switching state of each cell, each cell switches between a basic state and a phase-shifted state, thereby achieving a combination of different phase-shifted quantities.
According to the circuit structures shown in fig. 1-5, proper devices, capacitors, inductors and transistor sizes are selected to realize matching of proper numerical values, an X Band six-bit digital phase shifter is designed, and actual test results are shown in fig. 7-11.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (6)

1. An X Band six-bit digital phase shifter comprises 6 phase shifting units, and is characterized in that: the phase-shifting units are sequentially connected, the phase-shifting values are respectively-90 degrees, -45 degrees, -11.25 degrees, -22.5 degrees, -5.625 degrees and-180 degrees, the impedance of each phase-shifting unit port is 50 omega, wherein: -5.625 °, -11.25 °, -22.5 °, -45 ° use a simplified T-type phase shift structure, -90 ° and-180 ° use an embedded switch filter type structure.
2. An X Band six-bit digitally controlled phase shifter according to claim 1, wherein: the-5.625 ° phase shift structure comprises two triodes, wherein the grid of the first triode is connected to the control terminal through a resistor, the source is used as a signal input terminal, the drain is used as a signal output terminal, two inductors are connected between the source and the drain in series, the grid of the second triode is connected to the control terminal through a resistor, the drain is connected between the two inductors, the source is grounded through another inductor, and a resistor is connected between the source and the drain in series.
3. An X Band six-bit digitally controlled phase shifter according to claim 1, wherein: the-11.25 ° and-22.5 ° phase shifting structure comprises three triodes, wherein the gate of the first triode is connected to the control terminal through a resistor, the source serves as a signal input terminal, the drain serves as a signal output terminal, two inductors are connected in series between the source and the drain, the gate of the second triode is connected to the control terminal through a resistor, the drain is connected between the two inductors, a resistor is connected in series between the source and the drain, the source is connected with the drain of the third triode, the source of the third triode is grounded, the gate is connected to the control terminal through a resistor, and the drain is grounded through another inductor.
4. An X Band six-bit digitally controlled phase shifter according to claim 1, wherein: the-45-degree phase shifting structure comprises five triodes, wherein the grid electrode of each triode is connected to the control end through a resistor, the source electrode of the first triode is used as a signal input end, a drain electrode of the first triode is connected with the source electrode of the second triode, the source electrode of the third triode is connected with the drain electrode of the second triode, the drain electrode of the third triode is used as a signal output end, the resistor and two inductors are connected in parallel between the source electrode of the second triode and the drain electrode, the drain electrode of the fourth triode is connected between the two inductors, the source electrode of the fourth triode is connected with the drain electrode of the fifth triode and is finally grounded through the inductors, and the source electrode of the fifth triode is grounded.
5. An X Band six-bit digitally controlled phase shifter according to claim 1, wherein: the 90-degree phase shifting structure comprises six triodes, wherein the grid electrode of each triode is connected to a control end through a resistor, a source electrode connecting capacitor of the first triode is connected with a source electrode connecting inductor of the fourth triode and then is combined together to be used as a signal input end, a drain electrode of the first triode is connected with a source electrode of the second triode, a drain electrode connecting capacitor of the second triode is connected with a drain electrode connecting inductor of the fifth triode and then is combined together to be used as a signal output end, a drain electrode of the third triode is connected between the connection of the second triode and the third triode, a source electrode of the third triode is grounded, a resistor is connected between the source electrode and the drain electrode in series, two inductors which are connected in series are connected between the source electrode of the fourth triode and the drain electrode of the fifth triode, a drain electrode of the sixth triode is connected between the connection of the fourth triode and the connection of the fifth triode, and a resistor, and the source is grounded.
6. An X Band six-bit digitally controlled phase shifter according to claim 1, wherein: the 180 DEG phase shifting structure comprises six triodes, wherein the grid electrode of each triode is connected to a control end through a resistor, the source electrode of the first triode is connected with a capacitor and then connected with the source electrode of the fourth triode to serve as a signal input end, the drain electrode of the first triode is connected with the source electrode of the second triode, the drain electrode of the second triode is connected with a capacitor and then connected with the drain electrode of the fifth triode to serve as a signal output end, the drain electrode of the third triode is connected between the connection of the second triode and the third triode, the source electrode of the third triode is grounded, an inductor is connected between the source electrode and the drain electrode in series, two inductors which are connected in series are connected between the source electrode of the fourth triode and the drain electrode of the fifth triode, the drain electrode of the sixth triode is connected between the connection of the fourth triode and the fifth triode, and a resistor is connected between the source electrode and the drain electrode in series, and the source is grounded.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113904646A (en) * 2021-12-10 2022-01-07 成都华兴大地科技有限公司 Low-power-consumption broadband passive phase shifter and phased array device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113904646A (en) * 2021-12-10 2022-01-07 成都华兴大地科技有限公司 Low-power-consumption broadband passive phase shifter and phased array device

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Address after: 230088 building e, Anhui scientific and technological achievements transformation demonstration base, No. 425, Chuangxin Avenue, high tech Zone, Hefei, Anhui

Patentee after: Hefei Silicon Valley Microelectronics Co.,Ltd.

Address before: Room 1001-1002, F1 building, phase II, innovation industrial park, 2800 innovation Avenue, high tech Zone, Hefei City, Anhui Province, 230088

Patentee before: HEFEI IC VALLEY MICROELECTRONICS Co.,Ltd.