CN212010900U - Multilayer lining wall plasma processing device - Google Patents
Multilayer lining wall plasma processing device Download PDFInfo
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- CN212010900U CN212010900U CN202020568951.XU CN202020568951U CN212010900U CN 212010900 U CN212010900 U CN 212010900U CN 202020568951 U CN202020568951 U CN 202020568951U CN 212010900 U CN212010900 U CN 212010900U
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Abstract
The utility model discloses a multilayer inside lining wall plasma processing apparatus, a serial communication port, including the vacuum cavity wall, install in lining wall in many layers on the vacuum cavity wall inside wall, being fixed in objective table in the cavity in the vacuum cavity wall and with the objective table is connected and is kept apart the cavity horizontally for the division board that waits three-dimensional production cavity and vacuum cavity, the top and the bottom of vacuum cavity wall set up air inlet and extraction opening respectively, the elevating system who is used for changing lining wall in many layers is installed to the bottom of vacuum cavity wall, elevating system is connected to the backstage controller. The utility model discloses a set up removable multilayer lining wall in the vacuum cavity wall to realized the change of lining wall in the layer under the not broken vacuum state through elevating system, increased substantially plasma processing apparatus's rate of equipment utilization.
Description
Technical Field
The utility model belongs to the technical field of vacuum plasma processing apparatus technique and specifically relates to a multilayer inside lining wall plasma processing apparatus is related to.
Background
Vacuum plasma processing devices are currently used in a wide variety of semiconductor chip processing applications, such as plasma etching, ashing, and plasma enhanced gas phase chemical deposition.
The inner lining wall of the plasma processing cavity is a common structure, as shown in fig. 1, and comprises a vacuum cavity wall 1, an inner lining wall 2, an object stage 4, a separation plate 3, an air inlet 5 and an air exhaust port 6.
In the semiconductor processing process, because the chemical property of the plasma is very active, the plasma can be corroded or chemically polluted after being exposed in the plasma for a long time, the chemical environment is changed, and the stability of the plasma processing result is influenced, so that the lining wall of the plasma processing equipment is regularly cleaned or replaced at present. Because the vacuum is broken in the replacement process, the machine condition of the equipment is changed, the downtime is longer, and the running time of the equipment is greatly reduced. How to improve the utilization rate of equipment is a very important problem in the semiconductor processing industry.
Therefore, the application provides a vacuum plasma device structure with multilayer lining walls, which can realize self replacement of the lining walls corroded or polluted by plasma under the condition of no vacuum breaking, and greatly improve the equipment utilization rate of the plasma processing cavity.
Disclosure of Invention
The utility model provides a technical problem be current plasma processing apparatus broken vacuum easily when changing the inside lining wall, lead to the down time long, reduced the operating duration of equipment, reduced the work efficiency of equipment.
For solving foretell technical problem, the utility model discloses technical scheme provides a multilayer inside lining wall plasma processing apparatus, wherein, including the vacuum cavity wall, install in lining wall in many layers on the vacuum cavity wall inside wall, being fixed in objective table in the cavity in the vacuum cavity wall and with the objective table is connected and is kept apart the cavity horizontally for the division board that waits three-dimensional production cavity and vacuum cavity, the top and the bottom of vacuum cavity wall set up air inlet and extraction opening respectively, the elevating system who is used for changing lining wall in many layers is installed to the bottom of vacuum cavity wall, elevating system is connected to the background controller.
Optionally, the lifting mechanism comprises a first lifting mechanism mounted on the vacuum cavity wall for supporting the inner lining walls of the multiple layers and a second lifting mechanism mounted at the bottom of the vacuum cavity wall for replacing the inner lining walls of the multiple layers.
Optionally, the first lifting mechanism is a telescopic pump, a telescopic pump shaft of the telescopic pump penetrates through the vacuum cavity wall and is located at the bottom of the multilayer lining wall, and the telescopic pump shaft is in contact with the isolation plate.
Optionally, the second lifting mechanism is an air cylinder, a tray is fixed to an end of an air cylinder shaft of the air cylinder, the initial state of the air cylinder is an extended state, and the tray at the end of the air cylinder shaft in the extended state is located below the telescopic pump shaft.
Optionally, the number of layers of the multilayer inner lining wall is proportional to the thickness of the multilayer inner lining wall, and the number of layers of the multilayer inner lining wall is proportional to the distance from the position where the telescopic pump shaft penetrates through the vacuum cavity wall to the isolation plate.
Optionally, the thickness of the inner lining wall is equal to or less than the distance between the isolation plate and the vacuum cavity wall, and the radial width of the tray is greater than or equal to the distance between the isolation plate and the vacuum cavity wall.
The utility model discloses technical scheme's beneficial effect is:
the utility model discloses a set up removable multilayer lining wall in the vacuum cavity wall to realized the change of lining wall in the layer under the not broken vacuum state through elevating system, increased substantially plasma processing apparatus's rate of equipment utilization.
Drawings
FIG. 1 is a schematic diagram of a prior art plasma processing apparatus;
FIG. 2 is a schematic structural diagram of a plasma processing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic view of the working state of a plasma processing apparatus according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a structural change process of the lifting mechanism.
The specific implementation mode is as follows:
the present invention will be further described with reference to the accompanying drawings and specific embodiments, but the present invention is not limited thereto.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and to simplify the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the present disclosure, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact between the first and second features, or may comprise contact between the first and second features not directly. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly above and obliquely above the second feature, or simply meaning that the first feature is at a lesser level than the second feature.
Referring to fig. 2, 3 and 4, a multi-layer inner lining plasma processing apparatus according to an embodiment is shown, wherein the apparatus includes a vacuum cavity wall 1, a multi-layer inner lining wall 7 installed on an inner side wall of the vacuum cavity wall 1, a stage 4 fixed in a cavity in the vacuum cavity wall 1, and a partition plate 3 connected to the stage 4 and horizontally separating the cavity into an iso-stereoscopic generation cavity and a vacuum cavity, an air inlet 5 and an air exhaust 6 are respectively provided at a top and a bottom of the vacuum cavity wall 1, a lifting mechanism 8 for replacing the multi-layer inner lining wall 7 is installed at the bottom of the vacuum cavity wall 1, the lifting mechanism 8 is connected to a background controller, and the background controller controls the lifting mechanism 8 to replace the multi-layer inner lining wall.
In this embodiment, the lifting mechanism 8 includes a first lifting mechanism 81 mounted on the vacuum chamber wall 1 for supporting the multilayer inner lining wall 7 and a second lifting mechanism 82 mounted on the bottom of the vacuum chamber wall 1 for replacing the multilayer inner lining wall 7.
In this embodiment, the first lifting mechanism 81 is a telescopic pump, a telescopic pump shaft 811 of the telescopic pump penetrates through the vacuum cavity wall 1 and is located at the bottom of the multi-layer lining wall 7, and the telescopic pump shaft 811 is in contact with the isolation plate 3.
In this embodiment, the second elevating mechanism 82 is a cylinder, a tray 822 is fixed to an end of a cylinder shaft 821 of the cylinder, an initial state of the cylinder is an extended state, and the tray 822 at the end of the cylinder shaft 821 in the extended state is located below the telescopic pump shaft 811.
In this embodiment, the number of layers of the multi-layer inner lining wall 7 is proportional to the thickness of the multi-layer inner lining wall 7, and the number of layers of the multi-layer inner lining wall 7 is proportional to the distance from the position where the telescopic pump shaft 811 penetrates through the vacuum cavity wall 1 to the isolation plate 3.
In this embodiment, the thickness of the multi-layered lining wall 7 is equal to or less than the distance between the isolation plate 3 and the vacuum chamber wall 1, and the radial width of the tray 822 is greater than or equal to the distance between the isolation plate 3 and the vacuum chamber wall 1.
The features and functions of the present invention will be further understood from the following description.
The operation method of the multilayer inner lining wall plasma processing device of the embodiment is as follows:
as shown in fig. 2, fig. 3 and fig. 4, the multi-layered inner lining wall 7 is formed by combining a plurality of layers of barrel-shaped rings, the thickness of each layer is determined by the material strength of the multi-layered inner lining wall, a vacuum lifting mechanism (i.e., the second lifting mechanism 82, which may include a lifting mechanism in the form of a motor, an electromagnet, a cylinder, etc., in this embodiment, a cylinder is selected as the second lifting mechanism 82) is disposed below the multi-layered inner lining wall 7, and another vacuum lifting mechanism (i.e., the first lifting mechanism 81, which may also include a lifting mechanism in the form of a motor, an electromagnet, a cylinder, etc., in this embodiment, a telescopic pump is selected as the first lifting mechanism 81) is disposed on the side wall of.
When the first inner lining wall (the inner side wall 7 at the leftmost side shown in fig. 4) is etched by plasma or is chemically polluted to an unacceptable time, the first lifting mechanism 81 is started, the telescopic pump shaft 811 of the first lifting mechanism 81 retracts until the first inner lining wall 7 falls down to the tray 822 of the second lifting mechanism 82 due to gravity, the cylinder shaft 821 of the second lifting mechanism 82 retracts and simultaneously drives the tray 822 to recover and replace the first inner lining wall 7 to be replaced, and at the moment, the second intact inner lining wall is exposed to plasma to restart, so that the inner lining wall replacement is completed in vacuum. The whole process does not need to break vacuum, and the operation can be completed in a very short time, so that the running time of the equipment is greatly improved.
To sum up, the utility model discloses a set up removable multilayer lining wall in the vacuum cavity wall to realized the change of lining wall in the layer under the not broken vacuum state through elevating system, increased substantially plasma processing apparatus's rate of equipment utilization.
The above is only a preferred embodiment of the present invention, and not intended to limit the scope of the invention, and it should be appreciated by those skilled in the art that various equivalent substitutions and obvious changes made in the specification and drawings should be included within the scope of the present invention.
Claims (6)
1. The utility model provides a multilayer inside lining wall plasma processing apparatus, its characterized in that, including the vacuum cavity wall, install in multilayer inside lining wall on the vacuum cavity wall inside wall, be fixed in objective table in the cavity in the vacuum cavity wall and with the objective table is connected and keep apart the cavity horizontally for the isostereoscopical division produces cavity and vacuum cavity's division board, the top and the bottom of vacuum cavity wall set up air inlet and extraction opening respectively, the elevating system who is used for changing multilayer inside lining wall is installed to the bottom of vacuum cavity wall, elevating system is connected to the backstage controller.
2. The plasma processing apparatus according to claim 1, wherein the elevating mechanism comprises a first elevating mechanism installed on the vacuum chamber wall for supporting the inner liner wall and a second elevating mechanism installed at the bottom of the vacuum chamber wall for replacing the inner liner wall.
3. The multilayer inner liner wall plasma processing apparatus according to claim 2, wherein the first elevating mechanism is a telescopic pump, a telescopic pump shaft of the telescopic pump penetrates through the vacuum chamber wall and is located at the bottom of the multilayer inner liner wall, and the telescopic pump shaft is in contact with the isolation plate.
4. The multi-layer inner lining plasma processing device according to claim 3, wherein the second lifting mechanism is a cylinder, a tray is fixed to an end of a cylinder shaft of the cylinder, the initial state of the cylinder is an extended state, and the tray at the end of the cylinder shaft in the extended state is located below the shaft of the telescopic pump.
5. The apparatus of claim 3, wherein the number of layers of the multilayer liner is proportional to the thickness of the multilayer liner, and the number of layers of the multilayer liner is proportional to the distance from the position of the bellows pump shaft penetrating the vacuum cavity wall to the isolation plate.
6. The multilayer inner liner plasma processing apparatus as claimed in claim 4, wherein the thickness of the multilayer inner liner is equal to or less than the distance between the separation plate and the vacuum cavity wall, and the radial width of the tray is greater than or equal to the distance between the separation plate and the vacuum cavity wall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020568951.XU CN212010900U (en) | 2020-04-16 | 2020-04-16 | Multilayer lining wall plasma processing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020568951.XU CN212010900U (en) | 2020-04-16 | 2020-04-16 | Multilayer lining wall plasma processing device |
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| CN212010900U true CN212010900U (en) | 2020-11-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111370288A (en) * | 2020-04-16 | 2020-07-03 | 上海稷以科技有限公司 | Multilayer lining wall plasma processing device and working method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111370288A (en) * | 2020-04-16 | 2020-07-03 | 上海稷以科技有限公司 | Multilayer lining wall plasma processing device and working method thereof |
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