CN211880149U - Micro-energy acquisition chip and equipment - Google Patents
Micro-energy acquisition chip and equipment Download PDFInfo
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- CN211880149U CN211880149U CN202020680330.0U CN202020680330U CN211880149U CN 211880149 U CN211880149 U CN 211880149U CN 202020680330 U CN202020680330 U CN 202020680330U CN 211880149 U CN211880149 U CN 211880149U
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Abstract
The application belongs to the field of weak energy collection and discloses a micro-energy collection chip and a device; the first energy storage assembly to the third energy storage assembly are used for charging according to the first micro-energy voltage; the first switch component cuts off the connection between the power ground and the first signal ground according to the second control signal; the second field effect transistor is communicated with a first signal ground and a first voltage input end of the micro energy acquisition chip according to a first control signal, and the third field effect transistor is communicated with a first capacitor end of the micro energy acquisition chip and a first voltage output end of the micro energy acquisition chip according to a third control signal so that the first energy storage assembly to the third energy storage assembly are sequentially connected in series to generate a first voltage doubling voltage; the first radio frequency component generates a first ground voltage according to the first voltage doubling voltage and outputs the first ground voltage from the ground terminal; the sixth field effect transistor is communicated with the first ground end voltage to the power ground according to the fourth control signal; the weak energy acquisition threshold is reduced, and the energy use efficiency is improved.
Description
Technical Field
The application belongs to the field of weak energy collection, and particularly relates to a micro-energy collection chip and equipment.
Background
In the field of weak energy collection, the energy use efficiency is very low, for example, a pressing collection circuit is taken, micro-energy alternating current is obtained through pressing, and then micro-energy voltage is generated according to the micro-energy alternating current, and in one period, from 0V to the highest point, the micro-energy voltage at the highest point is determined by the size of an energy storage capacitor. During the 0V up to 2V period, the chip (including microprocessor and RF chip) is not working.
In an original parallel circuit or series circuit, only one system energy storage capacitor (about 2.2 UF) is arranged, and the positive electrode of the system energy storage capacitor and the negative electrode of the system energy storage capacitor are respectively and electrically connected to the power supply positive end of the chip and the ground. After the working voltage of the system is lower than about 2V, the microprocessor and the radio frequency chip stop working, so that residual charges exist in an energy storage capacitor of the system, micro-energy alternating current cannot be effectively utilized, and only the charges stored between the highest voltage and 2V are used in principle.
Therefore, the micro energy collecting device has the defects that the energy lower than the micro energy voltage cannot be utilized, so that the threshold value of weak energy collection is high and the energy use efficiency is low.
SUMMERY OF THE UTILITY MODEL
The application provides a micro energy acquisition chip and equipment, and aims to solve the problems that in the prior art, the threshold value of weak energy acquisition is high and the energy use efficiency is low.
The micro energy acquisition chip is connected with a first energy storage assembly, a second energy storage assembly and a third energy storage assembly, and comprises a first switch assembly, a first radio frequency assembly, a first one-way conduction assembly, a second field effect tube, a third field effect tube, a fourth field effect tube, a fifth field effect tube, a sixth field effect tube, a seventh field effect tube and an eighth field effect tube;
the grid of the second field effect tube jointly forms a first control end of the micro energy acquisition chip, the grid of the third field effect tube and the grid of the fourth field effect tube jointly form a third control end of the micro energy acquisition chip, the control end of the first switch component is a second control end of the micro energy acquisition chip, the grid of the fifth field effect tube and the grid of the sixth field effect tube jointly form a fourth control end of the micro energy acquisition chip, the grid of the seventh field effect tube and the grid of the eighth field effect tube jointly form a fifth control end of the micro energy acquisition chip, the drain of the third field effect tube, the drain of the fifth field effect tube, the drain of the seventh field effect tube, the cathode of the first one-way conduction component and the anode of the second one-way conduction component jointly form a first capacitance end of the micro energy acquisition chip, the source electrode of the second field effect tube and the positive electrode of the first unidirectional conduction assembly jointly form a first voltage input end of the micro-energy acquisition chip, the drain electrode of the second field effect tube and the first input-output end of the first switch assembly jointly form a simulation ground end of the micro-energy acquisition chip, the second input-output end of the first switch assembly and the drain electrode of the fourth field effect tube, the drain electrode of the sixth field effect tube and the drain electrode of the eighth field effect tube jointly form a power ground end of the micro-energy acquisition chip, the source electrode of the fourth field effect tube and the source electrode of the third field effect tube jointly form a first voltage output end of the micro-energy acquisition chip, the source electrode of the sixth field effect tube is connected with the source electrode of the fifth field effect tube and the radio frequency ground end of the first radio frequency assembly, and the source electrode of the eighth field effect tube is connected with the source electrode of the seventh field effect tube and the data end of the first radio frequency assembly The power supply end of the first radio frequency assembly and the negative electrode of the second unidirectional conducting assembly jointly form the radio frequency power supply end of the micro-energy acquisition chip;
the first end of the first energy storage assembly is connected with the first voltage input end of the micro energy acquisition chip, the first end of the third energy storage assembly is connected with the first capacitor end of the micro energy acquisition chip, the first end of the second energy storage assembly is connected with the radio frequency power supply end of the micro energy acquisition chip, the second end of the second energy storage assembly is connected with the first voltage output end of the micro energy acquisition chip, the second end of the third energy storage assembly and the analog ground end of the micro energy acquisition chip are connected to a first signal ground in a sharing mode, and the power ground end of the micro energy acquisition chip and the second end of the first energy storage assembly are connected to a power ground in a sharing mode;
the first unidirectional conducting component and the second unidirectional conducting component are both configured to conduct a first micro-energy voltage in a unidirectional way; the first energy storage assembly, the second energy storage assembly and the third energy storage assembly are all configured to be charged according to the first micro-energy voltage; the first switch assembly is configured to switch off the connection between the power ground and the first signal ground according to a second control signal; the second field effect transistor is communicated with a first signal ground and a first voltage input end of the micro energy acquisition chip according to a first control signal, and the third field effect transistor is communicated with a first capacitor end of the micro energy acquisition chip and a first voltage output end of the micro energy acquisition chip according to a third control signal so that the first energy storage assembly, the second energy storage assembly and the third energy storage assembly are sequentially connected in series to generate a first voltage doubling voltage; the first radio frequency component is configured to generate a first ground voltage according to the first voltage-multiplying voltage and output the first ground voltage from a ground, and generate a first wireless communication signal according to a first data signal and transmit the first wireless communication signal from a wireless link; the sixth field effect transistor is used for communicating the voltage of the first ground end to a power ground according to a fourth control signal; the seventh field effect transistor and the eighth field effect transistor are both configured to generate the first data signal according to a first original data signal accessed by a fifth control terminal of the micro energy acquisition chip.
The embodiment of the present application further provides a control method for a micro energy collection chip, including:
step A1: the first switch component is conducted so that the analog ground end of the micro energy acquisition chip is connected with a power ground; the first energy storage assembly is charged according to the first micro-energy voltage to generate a first charging voltage, and the third energy storage assembly is charged according to the first micro-energy voltage conducted by the first unidirectional conduction assembly to generate a third charging voltage; the fourth field effect transistor is conducted so that the second energy storage assembly is charged according to the first micro-energy voltage conducted by the second one-way conduction assembly in a one-way mode and generates a second charging voltage;
step A2: the micro energy acquisition chip works according to the first micro energy voltage which is unidirectionally conducted by the first unidirectional conducting assembly;
step A3: inputting a second control signal through a second control end of the micro energy acquisition chip to control the first switch component to be switched off so as to disconnect the analog ground end of the micro energy acquisition chip from a power ground; controlling a first control end of the micro energy acquisition chip to input a first control signal so that the potential of a first signal ground is equal to the potential of the first end of the first energy storage assembly, the potential of the second end of the third energy storage assembly is equal to the potential of the first end of the first energy storage assembly, the voltage of the first end of the third energy storage assembly is the sum of the third charging voltage and the first charging voltage, and the first control signal is at a low level; controlling a third control end of the micro energy acquisition chip to input a third control signal so that the potential of a second end of the second energy storage assembly is equal to the potential of a first capacitor end of the micro energy acquisition chip, the potential of a second end of the second energy storage assembly is equal to the potential of a first end of a third energy storage assembly, so that the voltage of the first end of the second energy storage assembly is equal to the sum of the third charging voltage, the first charging voltage and the second charging voltage to generate the first voltage doubling voltage, and the third control signal is at a high level; the first radio frequency component generates a first ground voltage according to the first voltage doubling voltage and outputs the first ground voltage from a ground terminal; a fourth control signal is input through a fourth control end of the micro-energy collecting chip to control the sixth field effect transistor to be communicated with the first ground end voltage to a power ground;
step A4: the seventh field effect transistor and the eighth field effect transistor are both configured to generate the first data signal according to a first original data signal accessed by a fifth control end of the micro energy acquisition chip; the first radio frequency component generates a first wireless communication signal from the first data signal and transmits the first wireless communication signal from a wireless link.
The embodiment of the application also provides micro-energy acquisition equipment, which comprises a first energy storage assembly, a second energy storage assembly, a third energy storage assembly and the micro-energy acquisition chip.
The embodiment of the application also provides another micro energy collecting chip,
the micro-energy acquisition chip is connected with a first energy storage assembly, a second energy storage assembly, a third energy storage assembly and a first radio frequency assembly, and comprises a first switch assembly, a first unidirectional conduction assembly, a second field effect tube, a third field effect tube, a fourth field effect tube, a fifth field effect tube, a sixth field effect tube, a seventh field effect tube and an eighth field effect tube;
the grid of the second field effect tube jointly forms a first control end of the micro energy acquisition chip, the grid of the third field effect tube and the grid of the fourth field effect tube jointly form a third control end of the micro energy acquisition chip, the control end of the first switch component is a second control end of the micro energy acquisition chip, the grid of the fifth field effect tube and the grid of the sixth field effect tube jointly form a fourth control end of the micro energy acquisition chip, the grid of the seventh field effect tube and the grid of the eighth field effect tube jointly form a fifth control end of the micro energy acquisition chip, the drain of the third field effect tube, the drain of the fifth field effect tube, the drain of the seventh field effect tube, the cathode of the first one-way conduction component and the anode of the second one-way conduction component jointly form a first capacitance end of the micro energy acquisition chip, the source electrode of the second field effect tube and the anode of the first unidirectional conduction assembly jointly form a first voltage input end of the micro energy acquisition chip, the drain electrode of the second field effect tube and the first input/output end of the first switch assembly jointly form a simulated ground end of the micro energy acquisition chip, the second input/output end of the first switch assembly and the drain electrode of the fourth field effect tube, the drain electrode of the sixth field effect tube and the drain electrode of the eighth field effect tube jointly form a power ground end of the micro energy acquisition chip, the source electrode of the fourth field effect tube and the source electrode of the third field effect tube jointly form a first voltage output end of the micro energy acquisition chip, and the source electrode of the sixth field effect tube and the source electrode of the fifth field effect tube jointly form a second voltage input end of the micro energy acquisition chip, the source electrode of the eighth field effect transistor and the source electrode of the seventh field effect transistor jointly form a first data input and output end of the micro energy acquisition chip, and the cathode of the second unidirectional conduction assembly is a radio frequency power supply end of the micro energy acquisition chip;
the first end of the first energy storage component is connected with the first voltage input end of the micro-energy acquisition chip, the first end of the third energy storage component is connected with the first capacitor end of the micro-energy acquisition chip, the first end of the second energy storage component is connected with the radio frequency power supply end of the micro energy acquisition chip and the power supply end of the first radio frequency component, the second end of the second energy storage component is connected with the first voltage output end of the micro energy acquisition chip, the second voltage input end of the micro-energy acquisition chip is connected with the radio frequency ground end of the first radio frequency component, the first data input/output end of the micro-energy acquisition chip is connected with the data end of the first radio frequency component, the second end of the third energy storage component and the analog ground end of the micro energy acquisition chip are connected to a first signal ground, the power ground end of the micro energy acquisition chip and the second end of the first energy storage assembly are connected to a power ground in a sharing mode;
the first unidirectional conducting component and the second unidirectional conducting component are both configured to conduct a first micro-energy voltage in a unidirectional way; the first energy storage assembly, the second energy storage assembly and the third energy storage assembly are all configured to be charged according to the first micro-energy voltage; the first switch assembly is configured to switch off the connection between the power ground and the first signal ground according to a second control signal; the second field effect transistor is communicated with a first signal ground and a first voltage input end of the micro energy acquisition chip according to a first control signal, and the third field effect transistor is communicated with a first capacitor end of the micro energy acquisition chip and a first voltage output end of the micro energy acquisition chip according to a third control signal so that the first energy storage assembly, the second energy storage assembly and the third energy storage assembly are sequentially connected in series to generate a second voltage-multiplying voltage; the first radio frequency component is configured to generate a first ground voltage according to the second voltage-multiplying voltage and output the first ground voltage from a ground, and generate a first wireless communication signal according to a first data signal and transmit the first wireless communication signal from a wireless link; the sixth field effect transistor is used for communicating the voltage of the first ground end to a power ground according to a fourth control signal; the seventh field effect transistor and the eighth field effect transistor are both configured to generate the first data signal according to a first original data signal accessed by a fifth control terminal of the micro energy acquisition chip.
The embodiment of the present application further provides another control method for a micro energy collection chip, including:
step B1: the first switch component is conducted so that the analog ground end of the micro energy acquisition chip is connected with a power ground; the first energy storage assembly is charged according to the first micro-energy voltage to generate a first charging voltage, and the third energy storage assembly is charged according to the first micro-energy voltage conducted by the first unidirectional conduction assembly to generate a third charging voltage; the fourth field effect transistor is conducted so that the second energy storage assembly is charged according to the first micro-energy voltage conducted by the second one-way conduction assembly in a one-way mode and generates a second charging voltage;
step B2: the micro energy acquisition chip works according to the first micro energy voltage which is unidirectionally conducted by the first unidirectional conducting assembly;
step B3: inputting a second control signal through a second control end of the micro energy acquisition chip to control the first switch component to be switched off so as to disconnect the analog ground end of the micro energy acquisition chip from a power ground; controlling a first control end of the micro energy acquisition chip to input a first control signal so that the potential of a first signal ground is equal to the potential of the first end of the first energy storage assembly, the potential of the second end of the third energy storage assembly is equal to the potential of the first end of the first energy storage assembly, the voltage of the first end of the third energy storage assembly is the sum of the third charging voltage and the first charging voltage, and the first control signal is at a low level; controlling a third control end of the micro energy acquisition chip to input a third control signal so that the potential of a second end of the second energy storage assembly is equal to the potential of a first capacitor end of the micro energy acquisition chip, the potential of a second end of the second energy storage assembly is equal to the potential of a first end of a third energy storage assembly, so that the voltage of the first end of the second energy storage assembly is equal to the sum of the third charging voltage, the first charging voltage and the second charging voltage to generate the second voltage doubling voltage, and the third control signal is at a high level; the first radio frequency component generates a first ground voltage according to the second voltage doubling voltage and outputs the first ground voltage from a ground terminal; a fourth control signal is input through a fourth control end of the micro-energy collecting chip to control the sixth field effect transistor to be communicated with the first ground end voltage to a power ground;
step B4: the seventh field effect transistor and the eighth field effect transistor generate the first data signal according to a first original data signal accessed by a fifth control end of the micro energy acquisition chip; the first radio frequency component generates a first wireless communication signal from the first data signal and transmits the first wireless communication signal from a wireless link.
The embodiment of the application also provides another micro energy collecting device which comprises a first energy storage assembly, a second energy storage assembly, a third energy storage assembly, a first one-way conduction assembly, a second one-way conduction assembly and the micro energy collecting chip.
The beneficial effect that technical scheme that this application provided brought is: as can be seen from the above application, the first micro energy voltage is unidirectionally conducted by the first unidirectionally conducting element and the second unidirectionally conducting element; the first energy storage assembly, the second energy storage assembly and the third energy storage assembly are charged according to the first micro-energy voltage; the first switch component cuts off the connection between the power ground and the first signal ground according to the second control signal; the second field effect transistor is communicated with a first signal ground and a first voltage input end of the micro energy acquisition chip according to a first control signal, and the third field effect transistor is communicated with a first capacitor end of the micro energy acquisition chip and a first voltage output end of the micro energy acquisition chip according to a third control signal so that the first energy storage assembly, the second energy storage assembly and the third energy storage assembly are sequentially connected in series to generate a first voltage doubling voltage; the first radio frequency component generates a first ground voltage according to the first voltage doubling voltage and outputs the first ground voltage from the ground terminal, and generates a first wireless communication signal according to a first data signal and transmits the first wireless communication signal from a wireless link; the sixth field effect transistor is communicated with the first ground end voltage to the power ground according to the fourth control signal; the seventh field effect tube and the eighth field effect tube generate a first data signal according to a first original data signal accessed by a fifth control end of the micro energy acquisition chip; three times of voltage doubling bootstrap is realized through the first energy storage assembly, the second energy storage assembly and the third energy storage assembly which are sequentially connected in series, the threshold value of weak energy collection is reduced, and the energy use efficiency is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a block diagram of a micro energy harvesting chip according to an embodiment of the present disclosure;
fig. 2 is another block diagram of a micro energy harvesting chip according to an embodiment of the present disclosure;
fig. 3 is a schematic circuit diagram of a micro energy harvesting chip according to an embodiment of the present disclosure;
fig. 4 is a block diagram of a micro energy collection device according to a second embodiment of the present disclosure;
fig. 5 is another block structure diagram of the micro energy collecting device according to the second embodiment of the present application;
fig. 6 is a circuit diagram of an example of a micro energy collection device according to a second embodiment of the present disclosure;
fig. 7 is a block diagram of a micro energy harvesting chip according to a third embodiment of the present application;
fig. 8 is another block structure diagram of a micro energy collection chip according to a third embodiment of the present disclosure;
fig. 9 is a schematic circuit structure diagram of a micro energy harvesting chip according to a third embodiment of the present application;
fig. 10 is a block diagram of a micro energy collection device according to a fourth embodiment of the present disclosure;
fig. 11 is another block structure diagram of a micro energy collection device according to the fourth embodiment of the present application;
fig. 12 is a circuit diagram of an example of a micro energy collection device according to a fourth embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Example one
Fig. 1 shows a module structure of a micro energy harvesting chip 01 provided in a first embodiment of the present application, and for convenience of description, only a part related to the first embodiment of the present application is shown, which is detailed as follows:
the utility model provides a micro energy gathers chip 01, it is connected with first energy storage subassembly 02, second energy storage subassembly 03 and third energy storage subassembly 04, micro energy gathers chip 01 includes first switch module 011, first radio frequency subassembly 012, first one-way subassembly 05 that switches on, second one-way subassembly 06, second field effect transistor M2, third field effect transistor M3, fourth field effect transistor M4, fifth field effect transistor M5, sixth field effect transistor M6, seventh field effect transistor M7 and eighth field effect transistor M8.
Wherein, the gates of the second fet M2 jointly form the first control terminal a of the micro energy collecting chip 01, the gate of the third fet M3 and the gate M4 of the fourth fet jointly form the third control terminal C of the micro energy collecting chip 01, the control terminal of the first switch module 011 is the second control terminal B of the micro energy collecting chip 01, the gate of the fifth fet M5 and the gate M6 of the sixth fet jointly form the fourth control terminal D of the micro energy collecting chip 01, the gate of the seventh fet M7 and the gate M8 of the eighth fet jointly form the fifth control terminal E of the micro energy collecting chip 01, the drain of the third fet M3, the drain of the fifth fet M5, the drain of the seventh fet M7, the cathode of the first unidirectional conducting module 05 and the anode of the second unidirectional conducting module 06 jointly form the first capacitance terminal PC1 of the micro energy collecting chip 01, the source of the second fet M2 and the anode of the first unidirectional conducting module 05 together form a first voltage input terminal P1.0 of the micro energy harvesting chip 01, the drain of the second fet M2 and the first input/output terminal of the first switch module 011 together form an analog ground terminal AGND of the micro energy harvesting chip 01, the second input/output terminal of the first switch module 011 and the drain of the fourth fet M4, the drain of the sixth fet M6 and the drain of the eighth fet M8 together form a power ground terminal GND of the micro energy harvesting chip 01, the source of the fourth fet M4 and the source of the third fet M3 together form a first voltage output terminal P2.0 of the micro energy harvesting chip 01, the source of the sixth fet M6 and the source of the fifth fet M5 are connected to the radio frequency ground terminal of the first radio frequency module 012, the source of the eighth fet M8 and the source of the seventh fet M7 and the positive terminal of the first radio frequency module 012 are connected to the data terminal, the power end of the first radio frequency component 012 and the negative electrode of the second one-way conduction component 06 together form a radio frequency power end RFVDD of the micro energy acquisition chip 01;
the first end of the first energy storage component 02 is connected with a first voltage input end P1.0 of the micro energy acquisition chip 01, the first end of the third energy storage component 04 is connected with a first capacitor end PC1 of the micro energy acquisition chip 01, the first end of the second energy storage component 03 is connected with a radio frequency power supply end RFVDD of the micro energy acquisition chip 01, the second end of the second energy storage component 03 is connected with a first voltage output end P2.0 of the micro energy acquisition chip 01, the second end of the third energy storage component 04 and an analog ground end AGND of the micro energy acquisition chip 01 are connected to a first signal ground in common, and a power ground end GND of the micro energy acquisition chip 01 and the second end of the first energy storage component 02 are connected to a power ground in common;
in the micro energy collecting chip 01, the first unidirectional conducting component 05 and the second unidirectional conducting component 06 are both configured to conduct a first micro energy voltage in a unidirectional manner; the first energy storage assembly 02, the second energy storage assembly 03 and the third energy storage assembly 04 are all configured to be charged according to a first micro-energy voltage; the first switching component 011 is configured to switch off the connection of the power ground and the first signal ground according to the second control signal; the second field effect transistor is communicated with a first signal ground and a first voltage input end P1.0 of the micro energy acquisition chip 01 according to a first control signal, and the third field effect transistor is communicated with a first capacitor end PC1 of the micro energy acquisition chip 01 and a first voltage output end P2.0 of the micro energy acquisition chip 01 according to a third control signal, so that the first energy storage assembly 02, the second energy storage assembly 03 and the third energy storage assembly 04 are sequentially connected in series to generate a first voltage doubling voltage; the first radio frequency component 012 is configured to generate a first ground voltage according to the first voltage-multiplying voltage and output the first ground voltage from the ground, and generate a first wireless communication signal according to a first data signal and transmit the first wireless communication signal from the wireless link; the sixth field effect transistor M6 is used for connecting the first ground end voltage to the power ground according to the fourth control signal; the seventh field-effect transistor M7 and the eighth field-effect transistor M8 are both configured to generate a first data signal according to the first original data signal accessed by the fifth control terminal E of the micro energy collecting chip 01.
As shown in fig. 2, the micro energy collecting chip 01 further includes a first field effect transistor M1; the grid of the first field-effect tube M1 and the grid of the second field-effect tube M2 jointly form a first control end a of the micro-energy collecting chip 01, the drain of the first field-effect tube M1, the drain of the third field-effect tube M3, the drain of the fifth field-effect tube M5, the drain of the seventh field-effect tube M7, the cathode of the first unidirectional conducting assembly 05 and the anode of the second unidirectional conducting assembly 06 jointly form a first capacitor end PC1 of the micro-energy collecting chip 01, and the source of the first field-effect tube M1, the source of the second field-effect tube M2 and the anode of the first unidirectional conducting assembly 05 jointly form a first voltage input end P1.0 of the micro-energy collecting chip 01.
As shown in fig. 3, the first switching component 011 is a first depletion mode fet JF 1;
the gate of the first depletion mode fet JF1 is the control terminal of the first switch component 011, the drain of the first depletion mode fet JF1 is the first input/output terminal of the first switch component 011, and the source of the first depletion mode fet JF1 is the second input/output terminal of the first switch component 011.
By way of example and not limitation, the fourth fet M4 is a depletion fet. The first unidirectional device 05 is a first diode D1, and the second unidirectional device 06 is a second diode D2.
The first switch component and the fourth field effect transistor M4 are depletion type field effect transistors, so when the micro energy collecting chip 10 works, the first switch component and the fourth field effect transistor M4 are both turned on, and the first energy storage component 11 and the second energy storage component 12 are charged according to the first micro energy voltage when the micro energy collecting chip 10 works.
The first embodiment of the present application further provides a control method of the micro energy collecting chip 01 shown in fig. 1, including:
step A1: the first switch component 011 is conducted so that the analog ground end AGND of the micro-energy acquisition chip 01 is connected with the power ground GND; the first energy storage assembly 02 charges according to the first micro-energy voltage to generate a first charging voltage, and the third energy storage assembly 04 charges according to the first micro-energy voltage conducted by the first unidirectional conducting assembly 05 to generate a third charging voltage; the fourth field effect transistor M4 is turned on to charge the second energy storage assembly 03 according to the first micro energy voltage unidirectionally conducted by the second unidirectional conducting assembly 06 and generate a second charging voltage;
step A2: the micro-energy acquisition chip 01 works according to the first micro-energy voltage conducted by the first unidirectional conducting assembly 05;
step A3: a second control signal is input through a second control end B of the micro energy acquisition chip 01 to control the first switch component 011 to be switched off, so that the analog ground end AGND of the micro energy acquisition chip 01 is disconnected with the power ground GND; controlling a first control end A of the micro energy acquisition chip 01 to input a first control signal so that the potential of a first signal ground is equal to the potential of a first end of the first energy storage assembly 02, the potential of a second end of the third energy storage assembly 04 is equal to the potential of the first end of the first energy storage assembly 02, the voltage of the first end of the third energy storage assembly 04 is the sum of a third charging voltage and the first charging voltage, and the first control signal is at a low level; controlling a third control terminal C of the micro energy collecting chip 01 to input a third control signal, so that the potential of the second terminal of the second energy storage component 03 is equal to the potential of the first capacitor terminal PC1 of the micro energy collecting chip 01, the potential of the second terminal of the second energy storage component 03 is equal to the potential of the first terminal of the third energy storage component 04, so that the voltage of the first terminal of the second energy storage component 03 is equal to the sum of the third charging voltage, the first charging voltage and the second charging voltage to generate a first voltage doubling voltage, and the third control signal is at a high level; the first rf component 012 generates a first ground voltage according to the first voltage-doubling voltage and outputs the first ground voltage from the ground; a fourth control signal is input through a fourth control end D of the micro-energy acquisition chip 01 to control a sixth field effect transistor M6 to communicate the voltage of the first ground end to the power ground;
step A4: the seventh field-effect transistor M7 and the eighth field-effect transistor M8 are both configured to generate a first data signal according to a first original data signal accessed by a fifth control terminal E of the micro energy collection chip 01; the first radio frequency component 012 generates a first wireless communication signal from the first data signal and transmits the first wireless communication signal from the wireless link.
In summary, in the embodiment of the present application, the first energy storage assembly 02, the second energy storage assembly 03, and the third energy storage assembly 04 are sequentially connected in series to realize triple voltage bootstrap, so that the threshold for weak energy collection is reduced, and the energy utilization efficiency is improved.
Example two
Fig. 4 shows a module structure of a micro energy collection device provided in the second embodiment of the present application, and for convenience of description, only the parts related to the second embodiment of the present application are shown, which are detailed as follows:
a micro energy acquisition device comprises a first energy storage assembly 02, a second energy storage assembly 03, a third energy storage assembly 04 and a micro energy acquisition chip 01 according to the first embodiment.
As shown in fig. 5, the micro energy harvesting device further comprises a first rectifying assembly 07. The first rectifying component 07 is connected with the first energy storage component 02, the micro-energy acquisition chip 01 and the first one-way conduction component 05, and is configured to generate a first micro-energy voltage according to the first micro-energy alternating current.
As shown in fig. 6, the first energy storage device 02 is a first capacitor C1, the second energy storage device 03 is a second capacitor C2, and the third energy storage device 04 is a third capacitor C3.
EXAMPLE III
Fig. 7 shows a module structure of the micro energy harvesting chip 10 provided in the third embodiment of the present application, and for convenience of description, only the parts related to the third embodiment of the present application are shown, which are detailed as follows:
a micro-energy acquisition chip 10 is connected with a first energy storage assembly 11, a second energy storage assembly 12, a third energy storage assembly 13 and a first radio frequency assembly 16, and the micro-energy acquisition chip 10 comprises a first switch assembly 101, a first one-way conduction assembly 14, a second one-way conduction assembly 15, a second field effect tube M2, a third field effect tube M3, a fourth field effect tube M4, a fifth field effect tube M5, a sixth field effect tube M6, a seventh field effect tube M7 and an eighth field effect tube M8.
Wherein, the gates of the second fet M2 together form a first control terminal a of the micro energy harvesting chip 10, the gate of the third fet M3 and the gate M4 of the fourth fet together form a third control terminal C of the micro energy harvesting chip 10, the control terminal of the first switch component 101 is the second control terminal B of the micro energy harvesting chip 10, the gate of the fifth fet M5 and the gate M6 of the sixth fet together form a fourth control terminal D of the micro energy harvesting chip 10, the gate of the seventh fet M7 and the gate M8 of the eighth fet together form a fifth control terminal E of the micro energy harvesting chip 10, the drain of the third fet M3, the drain of the fifth fet M5, the drain of the seventh fet M7, the cathode of the first unidirectional conducting component 14 and the anode of the second unidirectional conducting component 15 together form a first capacitance terminal PC1 of the micro energy harvesting chip 10, the source of the second fet M2 and the positive electrode of the first unidirectional conducting element 14 jointly form a first voltage input terminal P1.0 of the micro-energy-collecting chip 10, the drain of the second fet M2 and the first input/output terminal of the first switch element 101 jointly form an analog ground terminal AGND of the micro-energy-collecting chip 10, the second input/output terminal of the first switch element 101 and the drain of the fourth fet M4, the drain of the sixth fet M6 and the drain of the eighth fet M8 jointly form a power ground terminal GND of the micro-energy-collecting chip 10, the source of the fourth fet M4 and the source of the third fet M3 jointly form a first voltage output terminal P2.0 of the micro-energy-collecting chip 10, the source of the sixth fet M6 and the source of the fifth fet M5 jointly form a second voltage input terminal P3.0 of the micro-energy-collecting chip 10, and the source of the eighth fet M8 and the source of the seventh fet M7 jointly form a first voltage input/output terminal P4.0 of the micro-energy-collecting chip 10 The cathode of the second unidirectional conducting assembly 15 is a radio frequency power supply end RFVDD of the micro-energy collecting chip;
the first end of the first energy storage component 11 is connected with a first voltage input end P1.0 of the micro energy acquisition chip 10, the first end of the third energy storage component 13 is connected with a first capacitor end PC1 of the micro energy acquisition chip 10, the first end of the second energy storage component 12 is connected with a radio frequency power end RFVDD of the micro energy acquisition chip and a power end of the first radio frequency component 16, the second end of the second energy storage component 12 is connected with a first voltage output end P2.0 of the micro energy acquisition chip 10, the second voltage input end P3.0 of the micro energy acquisition chip 10 is connected with a radio frequency ground end of the first radio frequency component, the first data input and output end P4.0 of the micro energy acquisition chip 10 is connected with a data end of the first radio frequency component, the second end of the third energy storage component 13 is connected with an analog ground end AGND of the micro energy acquisition chip 10 in common to a first signal ground, and the power ground end of the micro energy acquisition chip 10 and the second end of the first energy storage component 11 are connected in common to a power ground;
in the micro-energy collecting chip 10, the first unidirectional conducting component 14 and the second unidirectional conducting component 15 are both configured to conduct the first micro-energy voltage in a unidirectional way; the first energy storage assembly 11, the second energy storage assembly 12 and the third energy storage assembly 13 are all configured to be charged according to the first micro-energy voltage; the first switching component 101 is configured to switch off the connection of the power ground and the first signal ground according to the second control signal; the second field effect transistor is communicated with a first signal ground and a first voltage input end P1.0 of the micro energy acquisition chip 10 according to a first control signal, and the third field effect transistor is communicated with a first capacitor end PC1 of the micro energy acquisition chip 10 and a first voltage output end P2.0 of the micro energy acquisition chip 10 according to a third control signal, so that the first energy storage assembly 11, the second energy storage assembly 12 and the third energy storage assembly 13 are sequentially connected in series to generate a second voltage doubling voltage; the first radio frequency component 16 is configured to generate a first ground voltage according to the second voltage-multiplying voltage and output the first ground voltage from the ground, and generate a first wireless communication signal according to the first data signal and transmit the first wireless communication signal from the wireless link; the sixth field effect transistor M6 is used for connecting the first ground end voltage to the power ground according to the fourth control signal; the seventh fet M7 and the eighth fet M8 are both configured to generate the first data signal according to the first original data signal accessed by the fifth control terminal E of the micro energy collecting chip 10.
As shown in fig. 8, the micro energy collecting chip 10 further includes a first field effect transistor M1; the gate of the first field-effect transistor M1 and the gate of the second field-effect transistor M2 jointly form a first control end a of the micro energy collection chip 10, the drain of the first field-effect transistor M1, the drain of the third field-effect transistor M3, the drain of the fifth field-effect transistor M5, the drain of the seventh field-effect transistor M7, the cathode of the first unidirectional conducting component 14 and the anode of the second unidirectional conducting component 15 jointly form a first capacitor end PC1 of the micro energy collection chip 10, and the source of the first field-effect transistor M1, the source of the second field-effect transistor M2 and the anode of the first unidirectional conducting component 14 jointly form a first voltage input end P1.0 of the micro energy collection chip 10.
As shown in fig. 9, the first switching element is a second depletion mode fet JF 2;
the gate of the second depletion mode fet JF2 is the control terminal of the first switch element 101, the drain of the second depletion mode fet JF2 is the first input/output terminal of the first switch element 101, and the source of the second depletion mode fet JF2 is the second input/output terminal of the first switch element 101.
By way of example and not limitation, the fourth fet M4 is a depletion fet the first unidirectional conducting component 14 is a seventh diode D7 and the second unidirectional conducting component 15 is an eighth diode D8.
The first switch component and the fourth field effect transistor M4 are depletion type field effect transistors, so when the micro energy collecting chip 10 works, the first switch component and the fourth field effect transistor M4 are both turned on, and the first energy storage component 11 and the second energy storage component 12 are charged according to the first micro energy voltage when the micro energy collecting chip 10 works.
The third embodiment of the present application further provides a control method of the micro energy collecting chip 10 shown in fig. 7, including:
step B1: the first switch component 101 is turned on to connect the analog ground end AGND of the micro energy collection chip 10 with the power ground GND; the first energy storage assembly 11 charges according to the first micro-energy voltage to generate a first charging voltage, and the third energy storage assembly 13 charges according to the first micro-energy voltage conducted by the first unidirectional conducting assembly 14 to generate a third charging voltage; the fourth field effect transistor M4 is turned on to charge the second energy storage assembly 12 according to the first micro energy voltage unidirectionally conducted by the second unidirectional conduction assembly 15 and generate a second charging voltage;
step B2: the micro energy acquisition chip 10 works according to the first micro energy voltage conducted by the first unidirectional conducting assembly 14;
step B3: a second control signal is input through a second control end B of the micro energy acquisition chip 10 to control the first switch component 101 to be turned off, so that the analog ground end AGND of the micro energy acquisition chip 10 is disconnected from the power ground GND; controlling a first control end A of the micro energy acquisition chip 10 to input a first control signal so that the potential of a first signal ground is equal to the potential of a first end of the first energy storage assembly 11, the potential of a second end of the third energy storage assembly 13 is equal to the potential of the first end of the first energy storage assembly 11, the voltage of the first end of the third energy storage assembly 13 is the sum of a third charging voltage and the first charging voltage, and the first control signal is at a low level; controlling a third control end C of the micro energy acquisition chip 10 to input a third control signal, so that the potential of a second end of the second energy storage component is equal to the potential of a first capacitor end of the micro energy acquisition chip 10, the potential of a second end of the second energy storage component 12 is equal to the potential of a first end of the third energy storage component 13, so that the voltage of the first end of the second energy storage component 12 is equal to the sum of a third charging voltage, the first charging voltage and the second charging voltage to generate a second voltage doubling voltage, and the third control signal is at a high level; the first rf module 16 generates a first ground voltage according to the second voltage-multiplying voltage and outputs the first ground voltage from the ground; a fourth control signal is input through a fourth control end D of the micro-energy collecting chip 10 to control the sixth field effect transistor M6 to communicate the voltage of the first ground end to the power ground;
step B4: the seventh field-effect transistor M7 and the eighth field-effect transistor M8 generate a first data signal according to the first original data signal accessed by the fifth control terminal E of the micro energy collecting chip 10; the first radio frequency assembly 16 generates a first wireless communication signal from the first data signal and transmits the first wireless communication signal from the wireless link.
To sum up, the first energy storage assembly 11, the second energy storage assembly 12 and the third energy storage assembly 13 are sequentially connected in series to realize triple voltage bootstrap in the embodiment of the application, so that the threshold value of weak energy collection is reduced, and the energy utilization efficiency is improved.
Example four
Fig. 10 shows a module structure of a micro energy collection device provided in the fourth embodiment of the present application, and for convenience of description, only the parts related to the fourth embodiment of the present application are shown, which are detailed as follows:
a micro energy collecting device comprises a first energy storage assembly 11, a second energy storage assembly 12, a third energy storage assembly 13 and a micro energy collecting chip 10 according to the third embodiment.
As shown in fig. 11, the micro energy harvesting device further comprises a first rectifying assembly 17. The first rectifying component 17 is connected with the first energy storage component 11, the micro-energy acquisition chip 10 and the first unidirectional conducting component 14, and is configured to generate a first micro-energy voltage according to the first micro-energy alternating current.
As shown in fig. 12, the first energy storage device 11 is a fourth capacitor C4, the second energy storage device 12 is a fifth capacitor C5, and the third energy storage device 13 is a sixth capacitor C6.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. A micro energy acquisition chip is characterized by being connected with a first energy storage assembly, a second energy storage assembly and a third energy storage assembly, and comprises a first switch assembly, a first radio frequency assembly, a first one-way conduction assembly, a second field effect tube, a third field effect tube, a fourth field effect tube, a fifth field effect tube, a sixth field effect tube, a seventh field effect tube and an eighth field effect tube;
the grid of the second field effect tube jointly forms a first control end of the micro energy acquisition chip, the grid of the third field effect tube and the grid of the fourth field effect tube jointly form a third control end of the micro energy acquisition chip, the control end of the first switch component is a second control end of the micro energy acquisition chip, the grid of the fifth field effect tube and the grid of the sixth field effect tube jointly form a fourth control end of the micro energy acquisition chip, the grid of the seventh field effect tube and the grid of the eighth field effect tube jointly form a fifth control end of the micro energy acquisition chip, the drain of the third field effect tube, the drain of the fifth field effect tube, the drain of the seventh field effect tube, the cathode of the first one-way conduction component and the anode of the second one-way conduction component jointly form a first capacitance end of the micro energy acquisition chip, the source electrode of the second field effect tube and the positive electrode of the first unidirectional conduction assembly jointly form a first voltage input end of the micro-energy acquisition chip, the drain electrode of the second field effect tube and the first input-output end of the first switch assembly jointly form a simulation ground end of the micro-energy acquisition chip, the second input-output end of the first switch assembly and the drain electrode of the fourth field effect tube, the drain electrode of the sixth field effect tube and the drain electrode of the eighth field effect tube jointly form a power ground end of the micro-energy acquisition chip, the source electrode of the fourth field effect tube and the source electrode of the third field effect tube jointly form a first voltage output end of the micro-energy acquisition chip, the source electrode of the sixth field effect tube is connected with the source electrode of the fifth field effect tube and the radio frequency ground end of the first radio frequency assembly, and the source electrode of the eighth field effect tube is connected with the source electrode of the seventh field effect tube and the data end of the first radio frequency assembly The power supply end of the first radio frequency assembly and the negative electrode of the second unidirectional conducting assembly jointly form the radio frequency power supply end of the micro-energy acquisition chip;
the first end of the first energy storage assembly is connected with the first voltage input end of the micro energy acquisition chip, the first end of the third energy storage assembly is connected with the first capacitor end of the micro energy acquisition chip, the first end of the second energy storage assembly is connected with the radio frequency power supply end of the micro energy acquisition chip, the second end of the second energy storage assembly is connected with the first voltage output end of the micro energy acquisition chip, the second end of the third energy storage assembly and the analog ground end of the micro energy acquisition chip are connected to a first signal ground in a sharing mode, and the power ground end of the micro energy acquisition chip and the second end of the first energy storage assembly are connected to a power ground in a sharing mode;
the first unidirectional conducting component and the second unidirectional conducting component are both configured to conduct a first micro-energy voltage in a unidirectional way; the first energy storage assembly, the second energy storage assembly and the third energy storage assembly are all configured to be charged according to the first micro-energy voltage; the first switch assembly is configured to switch off the connection between the power ground and the first signal ground according to a second control signal; the second field effect transistor is communicated with a first signal ground and a first voltage input end of the micro energy acquisition chip according to a first control signal, and the third field effect transistor is communicated with a first capacitor end of the micro energy acquisition chip and a first voltage output end of the micro energy acquisition chip according to a third control signal so that the first energy storage assembly, the second energy storage assembly and the third energy storage assembly are sequentially connected in series to generate a first voltage doubling voltage; the first radio frequency component is configured to generate a first ground voltage according to the first voltage-multiplying voltage and output the first ground voltage from a ground, and generate a first wireless communication signal according to a first data signal and transmit the first wireless communication signal from a wireless link; the sixth field effect transistor is used for communicating the voltage of the first ground end to a power ground according to a fourth control signal; the seventh field effect transistor and the eighth field effect transistor are both configured to generate the first data signal according to a first original data signal accessed by a fifth control terminal of the micro energy acquisition chip.
2. The micro energy harvesting chip of claim 1, wherein the first switching component is a first depletion mode field effect transistor;
the grid electrode of the first depletion type field effect transistor is the control end of the first switch component, the drain electrode of the first depletion type field effect transistor is the first input and output end of the first switch component, and the source electrode of the first depletion type field effect transistor is the second input and output end of the first switch component.
3. The micro energy harvesting chip of claim 2, wherein the fourth field effect transistor is a depletion field effect transistor.
4. A micro energy collecting device, comprising a first energy storage component, a second energy storage component, a third energy storage component and a micro energy collecting chip according to any one of claims 1 to 3.
5. The micro energy harvesting device of claim 4, further comprising:
the first rectifying assembly is connected with the first energy storage assembly, the micro-energy acquisition chip and the first one-way conduction assembly and configured to generate first micro-energy voltage according to first micro-energy alternating current.
6. A micro energy acquisition chip is characterized in that the micro energy acquisition chip is connected with a first energy storage assembly, a second energy storage assembly, a third energy storage assembly and a first radio frequency assembly, and comprises a first switch assembly, a first unidirectional conduction assembly, a second field effect tube, a third field effect tube, a fourth field effect tube, a fifth field effect tube, a sixth field effect tube, a seventh field effect tube and an eighth field effect tube;
the grid of the third field effect tube and the grid of the fourth field effect tube jointly form a third control end of the micro energy acquisition chip, the control end of the first switch component is the second control end of the micro energy acquisition chip, the grid of the fifth field effect tube and the grid of the sixth field effect tube jointly form a fourth control end of the micro energy acquisition chip, the grid of the seventh field effect tube and the grid of the eighth field effect tube jointly form a fifth control end of the micro energy acquisition chip, the drain of the third field effect tube, the drain of the fifth field effect tube, the drain of the seventh field effect tube, the cathode of the first one-way conduction component and the anode of the second one-way conduction component jointly form a first capacitance end of the micro energy acquisition chip, the source electrode of the second field effect tube and the anode of the first unidirectional conduction assembly jointly form a first voltage input end of the micro energy acquisition chip, the drain electrode of the second field effect tube and the first input/output end of the first switch assembly jointly form a simulated ground end of the micro energy acquisition chip, the second input/output end of the first switch assembly and the drain electrode of the fourth field effect tube, the drain electrode of the sixth field effect tube and the drain electrode of the eighth field effect tube jointly form a power ground end of the micro energy acquisition chip, the source electrode of the fourth field effect tube and the source electrode of the third field effect tube jointly form a first voltage output end of the micro energy acquisition chip, and the source electrode of the sixth field effect tube and the source electrode of the fifth field effect tube jointly form a second voltage input end of the micro energy acquisition chip, the source electrode of the eighth field effect transistor and the source electrode of the seventh field effect transistor jointly form a first data input and output end of the micro energy acquisition chip, and the cathode of the second unidirectional conduction assembly is a radio frequency power supply end of the micro energy acquisition chip;
the first end of the first energy storage component is connected with the first voltage input end of the micro-energy acquisition chip, the first end of the third energy storage component is connected with the first capacitor end of the micro-energy acquisition chip, the first end of the second energy storage component is connected with the radio frequency power supply end of the micro energy acquisition chip and the power supply end of the first radio frequency component, the second end of the second energy storage component is connected with the first voltage output end of the micro energy acquisition chip, the second voltage input end of the micro-energy acquisition chip is connected with the radio frequency ground end of the first radio frequency component, the first data input/output end of the micro-energy acquisition chip is connected with the data end of the first radio frequency component, the second end of the third energy storage component and the analog ground end of the micro energy acquisition chip are connected to a first signal ground, the power ground end of the micro energy acquisition chip and the second end of the first energy storage assembly are connected to a power ground in a sharing mode;
the first unidirectional conducting component and the second unidirectional conducting component are both configured to conduct a first micro-energy voltage in a unidirectional way; the first energy storage assembly, the second energy storage assembly and the third energy storage assembly are all configured to be charged according to the first micro-energy voltage; the first switch assembly is configured to switch off the connection between the power ground and the first signal ground according to a second control signal; the second field effect transistor is communicated with a first signal ground and a first voltage input end of the micro energy acquisition chip according to a first control signal, and the third field effect transistor is communicated with a first capacitor end of the micro energy acquisition chip and a first voltage output end of the micro energy acquisition chip according to a third control signal so that the first energy storage assembly, the second energy storage assembly and the third energy storage assembly are sequentially connected in series to generate a second voltage-multiplying voltage; the first radio frequency component is configured to generate a first ground voltage according to the second voltage-multiplying voltage and output the first ground voltage from a ground, and generate a first wireless communication signal according to a first data signal and transmit the first wireless communication signal from a wireless link; the sixth field effect transistor is used for communicating the voltage of the first ground end to a power ground according to a fourth control signal; the seventh field effect transistor and the eighth field effect transistor are both configured to generate the first data signal according to a first original data signal accessed by a fifth control terminal of the micro energy acquisition chip.
7. The micro energy harvesting chip of claim 6, wherein the first switching component is a second depletion mode field effect transistor;
the grid electrode of the second depletion type field effect transistor is the control end of the first switch component, the drain electrode of the second depletion type field effect transistor is the first input and output end of the first switch component, and the source electrode of the second depletion type field effect transistor is the second input and output end of the first switch component.
8. The micro energy harvesting chip of claim 7, wherein the fourth field effect transistor is a depletion field effect transistor.
9. A micro energy collection device, comprising a first energy storage component, a second energy storage component, a third energy storage component, a first one-way conduction component, a second one-way conduction component and a micro energy collection chip according to any one of claims 6 to 8.
10. The micro energy harvesting device of claim 9, further comprising:
the first rectifying assembly is connected with the first energy storage assembly, the micro-energy acquisition chip and the first one-way conduction assembly and configured to generate first micro-energy voltage according to first micro-energy alternating current.
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