CN211788913U - Lower electrode assembly and plasma processing device - Google Patents
Lower electrode assembly and plasma processing device Download PDFInfo
- Publication number
- CN211788913U CN211788913U CN202020903932.8U CN202020903932U CN211788913U CN 211788913 U CN211788913 U CN 211788913U CN 202020903932 U CN202020903932 U CN 202020903932U CN 211788913 U CN211788913 U CN 211788913U
- Authority
- CN
- China
- Prior art keywords
- ring
- lower electrode
- base
- electrode assembly
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
The utility model provides a lower electrode subassembly and plasma processing apparatus who locates, cooperate through dielectric ring and base, separate into two or two above clearances with the gap between dielectric ring and the base, and set up the protection ring between dielectric ring and base, and set up the protective layer in the base outside, the plasma of having avoided substrate and focus ring top leaks in the clearance between base and the edge ring subassembly, plasma corrosion base has been prevented, the possibility that arc discharge appears in lower electrode subassembly has been reduced, the effectual safe in utilization who guarantees lower electrode subassembly.
Description
Technical Field
The utility model relates to a plasma sculpture technical field especially relates to a plasma processing technology field who prevents down electrode subassembly and produce electric arc under high radio frequency power.
Background
Micromachining of semiconductor substrates or substrates is a well-known technique that may be used to fabricate, for example, semiconductors, flat panel displays, Light Emitting Diodes (LEDs), solar cells, and the like. An important step in microfabrication is a plasma processing process step, which is performed inside a reaction chamber into which process gases are introduced. An rf source is inductively and/or capacitively coupled to the interior of the chamber to excite the process gases to form and maintain a plasma. Inside the reaction chamber, the exposed substrate is supported by the lower electrode assembly and fixed in a fixed position by some clamping force to ensure the safety of the substrate and high yield of processing in the process.
The lower electrode assembly comprises an electrostatic chuck for fixing a substrate, a base for supporting the electrostatic chuck, and an edge ring assembly arranged around the base, and is used for supporting and fixing the substrate and controlling the temperature, electric field distribution and the like of the substrate in the process of processing the substrate.
In the prior art, a base is usually made of aluminum, an insert ring surrounding the periphery of the base is usually made of a ceramic material, and due to the fact that the difference between the thermal expansion coefficients of the base and the insert ring is large, a certain space is required to be arranged between the insert ring and the base to accommodate thermal expansion and contraction of the base in order to ensure that the base works within a large temperature range.
As the processing precision of the substrate is higher and higher, the radio frequency power applied to the reaction cavity is higher and higher. High rf power is likely to generate arc discharge in a narrow space in the reaction chamber, damaging the susceptor and its peripheral components, and seriously threatening the stability and safety of the operation of the lower electrode assembly, so a solution is urgently needed to meet the continuously improved rf applied power and the requirement of the processing uniformity of the substrate.
SUMMERY OF THE UTILITY MODEL
In order to solve the above technical problem, the utility model provides a lower electrode assembly for bear pending substrate, include
The base comprises a base body and a step part extending outwards from the base body;
an electrostatic chuck located above the pedestal; and
an edge ring assembly disposed around the pedestal and electrostatic chuck, the edge ring assembly comprising:
a focus ring disposed around the pedestal and/or electrostatic chuck, an
The dielectric ring is arranged below the focusing ring and surrounds the base, the dielectric ring comprises a dielectric ring body and an extension portion extending from the dielectric ring body to the base, a gap is formed between the dielectric ring and the base, and the step portion is matched with the extension portion to divide the gap into at least a first gap and a second gap.
Optionally, a protective layer is disposed on an outer side of the base.
Optionally, the protective layer is an alumina polystyrene composite material.
Optionally, a protection ring is further disposed around the edge ring assembly and the pedestal and/or the electrostatic chuck, wherein at least a portion of the protection ring abuts against the dielectric ring and the pedestal.
Optionally, at least a portion of the guard ring abuts the pedestal and the electrostatic chuck. Optionally, the guard ring is a plasma corrosion resistant material.
Optionally, the protective ring is made of a polymer material.
Optionally, the protective ring is of a fluoroelastomer or perfluoroelastomer series.
Optionally, the guard ring is disposed above the stepped portion.
Optionally, the dielectric ring is a high thermal conductivity ceramic material or an aluminum oxide material.
Further, the utility model also discloses a plasma processing apparatus, including a vacuum reaction chamber, set up electrode subassembly in the vacuum reaction chamber, electrode subassembly includes the above down the characteristic.
Further, the utility model also discloses a lower electrode subassembly's mounting method, including following step:
providing a pedestal with an electrostatic chuck, the pedestal comprising a pedestal body and a step extending outwardly from the pedestal body,
providing a dielectric ring, wherein the dielectric ring comprises a dielectric ring body and an extension part extending towards the direction of a base, the extension part of the dielectric ring is placed on a step part of the base, a gap is arranged between the dielectric ring and the base, and the step part is matched with the extension part to divide the gap into a first gap and a second gap;
a focus ring is disposed over the dielectric ring.
Optionally, a protective layer is disposed on the outer side of the base.
Optionally, a guard ring is disposed around the periphery of the electrostatic chuck and the pedestal, the focus ring at least partially covering the guard ring.
Optionally, the guard ring at least partially abuts the pedestal and the electrostatic chuck.
Optionally, the guard ring at least partially abuts the dielectric ring.
The utility model has the advantages that: the utility model provides a plasma corrosion resistant lower electrode subassembly and mounting method thereof sets up through the cooperation of base and dielectric ring, separates into the less clearance of a plurality of with the clearance between base and the dielectric ring, has avoided the plasma above substrate and the focus ring to reveal in the clearance between base and the marginal ring subassembly, has reduced the size in single clearance simultaneously, has reduced the electric arc discharge's that lower electrode subassembly probably appears possibility. The use safety of the lower electrode assembly is effectively ensured.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 shows a schematic structural diagram of a capacitively-coupled plasma processing apparatus;
FIG. 2 shows a schematic view of a partial lower electrode assembly structure;
FIG. 3 shows a partial bottom electrode assembly structure schematic of another embodiment;
fig. 4 shows a schematic structural diagram of an inductively coupled plasma processing apparatus.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Fig. 1 shows a schematic view of a capacitively coupled plasma processing apparatus, which includes an evacuable reaction chamber 100 surrounded by an outer wall 10. The reaction chamber 100 is used to process a substrate 103. The reaction chamber comprises a lower electrode assembly inside, and is used for supporting the substrate and controlling the substrate temperature, the electric field and other factors influencing the substrate processing. The lower electrode assembly comprises a base 101 for bearing an electrostatic chuck 102, a temperature control device is arranged in the base 101 for realizing the temperature control of an upper substrate, the electrostatic chuck 102 for bearing a substrate 103, and a direct current electrode is arranged in the electrostatic chuck, and the direct current electrode generates direct current adsorption between the back surface of the substrate and the bearing surface of the electrostatic chuck so as to realize the fixation of the substrate. An edge ring assembly 20 is provided around the periphery of the pedestal and electrostatic chuck for adjusting the temperature, electric field distribution, etc. at the edge region of the substrate. Disposing a plasma confinement ring 108 around the edge ring assembly 20, between the edge ring assembly 20 and the chamber sidewall, for confining a plasma to the reaction region while allowing gas to pass therethrough; the grounding ring 109, located below the plasma confinement ring, functions to provide electric field shielding to prevent plasma leakage. A bias RF power supply, typically applying a bias RF signal to the lower electrode assembly, controls the direction of plasma bombardment. The utility model discloses a lower electrode subassembly can be used for the capacitively coupled plasma processing apparatus as shown in figure 1.
In the capacitively-coupled plasma processing apparatus shown in fig. 1, an upper electrode assembly is included in addition to a lower electrode assembly, and the upper electrode assembly includes a gas shower head 30 for introducing a process gas in a gas supply apparatus into the reaction chamber. And a high-frequency radio frequency power source applies a high-frequency radio frequency signal to at least one of the upper electrode assembly or the lower electrode assembly so as to form a radio frequency electric field between the upper electrode assembly and the lower electrode assembly, and excites the process gas in the reaction cavity into plasma, thereby realizing the treatment of the plasma on the substrate to be treated.
Fig. 2 illustrates a partial lower electrode assembly structure in which a lower electrode assembly includes: a focus ring 201 disposed around the susceptor 101 and/or the electrostatic chuck 102 and the substrate 103 for adjusting the temperature, electric field distribution, etc. of the edge region of the substrate 103; a dielectric ring 202 is disposed below the focus ring 201, and the dielectric ring 202 is used to maintain the potential difference between the focus ring 201 and the base 101 and to adjust the temperature of the focus ring 201. A guard ring 104 is disposed between the base 101 and the dielectric ring 202, the guard ring 104 being a plasma resistant material, typically a polymeric material such as a fluoroelastomer or perfluoroelastomer series.
In the present invention, the base 101 is usually made of conductive metal, such as aluminum, and the dielectric ring 202 surrounding the base is usually made of ceramic material, preferably high thermal conductivity ceramic material, which can also be made of Al2O3Material, due to the difference in thermal expansion coefficient between the base 101 and the dielectric ring 202Also, to avoid the component from being compressed by heat, a certain gap is required between the dielectric ring 202 and the base 101 during mounting. As the processing precision of the substrate is higher and higher, the radio frequency power applied to the reaction cavity is higher and higher. The high radio frequency power easily generates arc discharge in a narrow space in the reaction cavity, damages the base and peripheral components thereof, and seriously threatens the working stability and safety of the lower electrode component.
In this embodiment, the base 101 includes a base body 1011 and a step 1012 extending outward from the base body 1011, the dielectric ring 202 includes a dielectric ring body 2021 and an extension 2022 extending from the dielectric ring body 2021 to the base 101, the step 1012 and the extension 2022 are engaged, and the extension 2022 of the dielectric ring 202 and the step 1012 of the base 101 can be tightly contacted by the gravity of the dielectric ring 202 itself or by an externally applied pressure, so as to separate the gap between the base 101 and the dielectric ring 202 into a first gap 1051 and a second gap 1052. The guard ring 104 is disposed in the first gap 1051, and the guard ring 104 surrounds the pedestal 101 and the electrostatic chuck periphery and at least partially abuts the dielectric ring 202. It can prevent the plasma from bombarding the connection layer between the electrostatic chuck and the base 101, and can further prevent the plasma from entering into the second gap 1052, thereby reducing the possibility of arc discharge. According to the arc discharge principle, on the premise of the same air pressure and applied electric field, the larger the gas diffusion space is, the more easily arc discharge is generated, the gap is divided into two smaller spaces by the matching of the step part 1012 and the extension part 2022, the gas diffusion space is reduced, so that the generation probability of arc discharge can be effectively reduced, and the safe voltage working range of the lower electrode assembly is improved. Meanwhile, a portion of the guard ring 104 is located between the pedestal 101 and the focus ring 201, such that the pedestal 101 and the focus ring 201 are electrically isolated from each other, and at the same time, the guard ring 104 serves to prevent plasma from entering the first gap 1051 through a gap between the focus ring and the pedestal or the electrostatic chuck. Further, the outer side of the base 101 is provided with a protective layer 106, which is a plasma corrosion resistant material, typically an aluminum oxide material, and may also be an yttrium oxide material, and which can prevent the base 101 from being corroded by the leaked plasma, thereby further improving the safety of the lower electrode assembly.
The shape of the guard ring 104 can be varied, and in the embodiment shown in fig. 2, the guard ring 104 extends along the first gap 1051, and the extension 2022 of the dielectric ring abuts against a portion of the guard ring to prevent gas from entering the second gap 1052 and arcing within the second gap. In other embodiments, the guard and focus rings and the dielectric ring may have other matching shapes.
Fig. 3 shows a schematic view of a lower electrode assembly of another embodiment, and for clarity and conciseness of description, the same reference numerals are used to describe the same components as those described above. In this embodiment, the base 101 includes at least two steps 1013 and 1014, and the extension of the dielectric ring 202 toward the base is in close contact with at least one step, dividing the gap between the dielectric ring and the base into two or more to further prevent gas from entering the gap below. In this embodiment, at least a portion of the extension portion of the focus ring 201 facing the base abuts against the upper surface of the guard ring 104, so as to block the gas path of the gap between the focus ring and the base, and prevent the gas from entering the gap below to generate arc discharge.
Optionally, a thermally conductive layer is disposed between the focus ring 201 and the dielectric ring 202, and/or a thermally conductive layer is disposed between the dielectric ring 202 and the base 101 to improve the ability to conduct heat to the temperature of the focus ring 201. In other embodiments, the dielectric ring 201 can also be disposed over other independently temperature-controllable support members to achieve independent temperature control of the focus ring 201 from the substrate 103.
Optionally, the present invention further provides a method for installing the lower electrode assembly, comprising the following steps:
providing a base 101 with an electrostatic chuck 102, the base 101 comprising a base body 1011 and a step 1012 extending outwardly from the base body 1011,
providing a dielectric ring 202, wherein the dielectric ring 202 includes a dielectric ring body 2021 and an extension portion 2022 extending from the dielectric ring body 2021 to the base 101, a gap is provided between the dielectric ring 202 and the base 101, and placing the extension portion of the dielectric ring on the step portion of the base can selectively apply a downward pressure to the dielectric ring 202 to further improve the tightness between the extension portion 2022 and the step portion 1012. The step 1012 cooperates with the extension 2022 to separate the gap into a first gap 1051 in which a protective ring 104 is disposed, the protective ring 104 being a plasma resistant material, typically a polymer material such as a fluoroelastomer or perfluoroelastomer, and a second gap 1052 in which the protective ring 104 may be disposed around the pedestal and electrostatic chuck, and the dielectric ring 202 may be disposed around the pedestal and protective ring. A focus ring 201 is disposed over the dielectric ring 202 and the guard ring 104 and at least partially covers the guard ring to prevent gas from entering the gap between the dielectric ring and the pedestal.
In addition, an insulating window 130 is disposed above the reaction chamber, an inductive coil 140 is disposed above the insulating window, a high-frequency rf power source 145 applies an rf signal to the inductive coil 140, the inductive coil 140 generates an alternating magnetic field, and an alternating electric field is induced in the reaction chamber, thereby achieving plasma dissociation of the process gas entering the reaction chamber. In this embodiment, the process gas may be injected into the reaction chamber from the sidewall of the reaction chamber, or a gas injection port may be provided on the insulating window to accommodate the process gas. A bias RF power source is applied to the lower electrode assembly through a bias RF match for controlling the energy distribution of the plasma.
The utility model discloses a dielectric ring and base cooperation separate into two less clearances with the gap between dielectric ring and the base to and set up the protection ring between dielectric ring and base, and set up the protective layer in the base outside, the plasma of having avoided substrate and focus ring top is leaked in the clearance between base and the edge ring subassembly, has prevented plasma corrosion base, has reduced the electric arc discharge's that electrode subassembly probably appears down possibility, the effectual safe in utilization who guarantees electrode subassembly down.
The utility model discloses a lower electrode subassembly is not restricted to the plasma processing apparatus who is applied to above-mentioned two kinds of embodiments, also can be suitable for in other plasma processing apparatus, and the no longer repeated description is here.
While the present invention has been described in detail with reference to the preferred embodiments thereof, it should be understood that the above description should not be taken as limiting the present invention. Numerous modifications and alterations to the present invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (13)
1. A bottom electrode assembly for carrying a substrate to be processed, comprising: it includes: the base comprises a base body and a step part extending outwards from the base body;
an electrostatic chuck located above the pedestal; and
an edge ring assembly disposed around the pedestal and electrostatic chuck, the edge ring assembly comprising:
a focus ring disposed around the pedestal and/or electrostatic chuck, an
The dielectric ring is arranged below the focusing ring and surrounds the base, the dielectric ring comprises a dielectric ring body and an extension portion extending from the dielectric ring body to the base, a gap is formed between the dielectric ring and the base, and the step portion is matched with the extension portion to divide the gap into at least a first gap and a second gap.
2. The lower electrode assembly of claim 1, wherein: and a protective layer is arranged on the outer side of the base.
3. The lower electrode assembly of claim 2, wherein: the protective layer is an aluminum oxide and/or yttrium oxide material layer.
4. The lower electrode assembly of claim 1, wherein: a protective ring is further disposed around the edge ring assembly and the pedestal and/or the electrostatic chuck.
5. The lower electrode assembly of claim 4, wherein: at least a portion of the guard ring abuts the dielectric ring and pedestal.
6. The lower electrode assembly of claim 4, wherein: at least a portion of the guard ring abuts the pedestal and the electrostatic chuck.
7. The lower electrode assembly of claim 4, wherein: the guard ring is a plasma resistant material.
8. The lower electrode assembly of claim 4, wherein: the protection ring is made of high polymer material.
9. The lower electrode assembly of claim 4, wherein: the protective ring is made of fluororubber or perfluororubber series.
10. The lower electrode assembly of claim 4, wherein: the guard ring is disposed above the stepped portion.
11. The lower electrode assembly of claim 4, wherein: the focus ring includes an extension extending in a direction toward the electrostatic chuck, the extension at least partially covering the guard ring.
12. The lower electrode assembly of claim 1, wherein: the dielectric ring is a high thermal conductivity ceramic material or an aluminum oxide material.
13. A plasma processing apparatus comprising a vacuum processing chamber, characterized by: the vacuum processing chamber includes a lower electrode assembly according to any one of claims 1 to 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020903932.8U CN211788913U (en) | 2020-05-26 | 2020-05-26 | Lower electrode assembly and plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020903932.8U CN211788913U (en) | 2020-05-26 | 2020-05-26 | Lower electrode assembly and plasma processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211788913U true CN211788913U (en) | 2020-10-27 |
Family
ID=72956088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020903932.8U Active CN211788913U (en) | 2020-05-26 | 2020-05-26 | Lower electrode assembly and plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211788913U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113308681A (en) * | 2021-05-21 | 2021-08-27 | 北京北方华创微电子装备有限公司 | Bearing device in semiconductor process equipment and semiconductor process equipment |
| CN114649178A (en) * | 2020-12-18 | 2022-06-21 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly and plasma processing device |
-
2020
- 2020-05-26 CN CN202020903932.8U patent/CN211788913U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114649178A (en) * | 2020-12-18 | 2022-06-21 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly and plasma processing device |
| CN113308681A (en) * | 2021-05-21 | 2021-08-27 | 北京北方华创微电子装备有限公司 | Bearing device in semiconductor process equipment and semiconductor process equipment |
| CN113308681B (en) * | 2021-05-21 | 2022-01-11 | 北京北方华创微电子装备有限公司 | Bearing device in semiconductor process equipment and semiconductor process equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI656556B (en) | Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber, lower electrode assembly, and method of etching semiconductor substrate | |
| KR101141488B1 (en) | Method and apparatus for reducing substrate backside deposition during processing | |
| US7585384B2 (en) | Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor | |
| KR102352699B1 (en) | Plasma processing apparatus | |
| EP1249033A1 (en) | Electrode assembly | |
| CN211788913U (en) | Lower electrode assembly and plasma processing device | |
| CN213583694U (en) | Lower electrode assembly and plasma processing device | |
| US20190252159A1 (en) | Mounting apparatus for object to be processed and processing apparatus | |
| CN213026046U (en) | Lower electrode assembly and plasma processing device | |
| CN113725059A (en) | Lower electrode assembly, mounting method thereof and plasma processing device | |
| US11488852B2 (en) | Methods and apparatus for reducing high voltage arcing in semiconductor process chambers | |
| KR20200115228A (en) | Plasma processing apparatus | |
| JPH08167595A (en) | Plasma treatment device | |
| KR101277503B1 (en) | Plasma processing apparatus and plasma processing method | |
| JP2006253312A (en) | Plasma processing apparatus | |
| KR20220058777A (en) | Substrate treating appartus and substrate treating method | |
| CN114843165A (en) | Lower electrode assembly and plasma processing device | |
| TWI839675B (en) | Lower electrode assembly and plasma processing device | |
| CN114649178A (en) | Lower electrode assembly and plasma processing device | |
| TWI797498B (en) | Bottom electrode element, its mounting method and plasma processing device | |
| JPH0794480A (en) | Plasma processing and plasma processing device | |
| KR102324032B1 (en) | Substrate supporting module and substrate processing apparatus having the same | |
| TW202331783A (en) | Lower electrode assembly, plasma processing device and assembling method thereof characterized by preventing the gap between the electrostatic chuck and the edge ring assembly from generating electric arc and further avoiding the damage of the lower electrode assembly and the scrapping of the substrate | |
| KR100686284B1 (en) | Upper electrode unit and plasma processing apparatus | |
| KR20230092684A (en) | Ring assembly and substrate processing apparatus including same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |