CN211743162U

CN211743162U - NPN type transverse SOI AlGaN/Si HBT device structure

Info

Publication number: CN211743162U
Application number: CN202020083895.0U
Authority: CN
Inventors: 李迈克
Original assignee: Zhonghe Boxin Chongqing Semiconductor Co ltd
Current assignee: Zhonghe Boxin Chongqing Semiconductor Co ltd
Priority date: 2020-01-15
Filing date: 2020-01-15
Publication date: 2020-10-23
Anticipated expiration: 2030-01-15

Abstract

The utility model provides a horizontal SOI AlGaN Si HBT device structure of NPN type, including the semi-insulating monocrystalline silicon substrate of N type light doping, the semi-insulating monocrystalline silicon substrate surface of N type light doping is formed with the buried oxide layer, the buried oxide layer surface is formed with the same emitter region that is the same and the width is different from a left side to the right side, base region and collecting area, supreme deposit has SiON oxide layer and N type doping AlGaN layer from the bottom in emitter region and the collecting area, it has doping concentration from a left side to the right side P type heavy doping Si layer of little gradual change to grow in the base region, the emitter region, base region and collecting area for the surface metal silicide correspond to grow have the projecting pole, the electrode extraction layer of base and collecting electrode, through keeping apart the insulating isolation oxide layer between the adjacent electrode. The method and the device can improve the interface characteristic and the base region electron mobility of the AlGaN layer, reduce the base region transit time, improve the frequency of the device to enable the frequency characteristic to be more excellent, and simultaneously can improve the switching speed and the cut-off frequency of the device through the metal silicide layer.

Description

NPN type transverse SOI AlGaN/Si HBT device structure

Technical Field

The utility model relates to the field of semiconductor technology, concretely relates to horizontal SOI AlGaN Si HBT device structure of NPN type.

Background

Conventional semiconductor materials, represented by silicon (Si) and gallium arsenide (GaAs), have become unable to meet the development of modern electronic technology due to the requirements of radiation resistance, high temperature, high voltage and high power. The wide bandgap semiconductor GaN electronic device can be applied to high temperature, high pressure, high frequency and severe environments, such as radar, base station of wireless communication and satellite communication.

GaN is favored in high frequency, high power, high temperature electronic devices because of its large forbidden band width, high breakdown voltage, high electron saturation drift velocity, excellent electrical and optical properties, and good chemical stability. At present, the temperature of high-temperature operation of the GaN HBT device of the power amplifier used for high-power communication and radar can reach 300 ℃ so as to obtain wide attention in the fields of national defense and communication.

With the growing maturity of GaN device technology, more and more GaN hbts are used in more and more communication system devices, so that the working capacity and reliability of the system are improved to the maximum extent: in military terms, thunder corporation of america is developing GaN HBT-based transceiver components for future military radar upgrades; on a civilian scale, the ability of GaN HBTs to handle high frequencies and high power is important for the development of amplifiers and modulators and other critical devices in advanced communication networks.

With the development of HBTs (Heterojunction Bipolar transistors) toward smaller feature sizes and higher integration, the performance of GaN-based HBTs can be further improved and the application range thereof can be expanded by combining the conventional GaN/AlGaN/AlN material with the strain technology and the SOI (silicon on Insulator) technology. The strain technology can effectively improve the mobility of a transistor, thereby improving the performance of the device, and becomes an important mature technology and a high-speed development direction of a high-frequency/high-performance semiconductor device and an integrated circuit. The strain technology can be mainly divided into biaxial strain and uniaxial strain according to the stress introduction manner, and the biaxial strain (bulk strain) technology and the heterogeneous channel are mainly used for a large-size CMOS device, while the uniaxial strain technology is mainly used for a small-size device.

The inventor of the utility model discovers through research that small-size GaN/AlGaN/AlN HBT has more excellent performance in the terahertz frequency band to have compatible potentiality with silicon-based technology, so from the perspective of technology, how to introduce the device structure of small-size GaN/AlGaN/AlN HBT simultaneously with strain technology and SOI technology, thereby rationally changing the energy band structure and the material parameter of the device, further improving the high-frequency characteristic thereof; in addition, because the mobility of electrons is obviously higher than that of holes, the HBT is mostly of an NPN type, and if the existing "strain technology" is considered and the difference between lattice constants of AlGaN and Si is utilized, how to introduce uniaxial compressive stress into the Si base region is utilized, so that the mobility of minority carrier electrons in the base region is effectively improved, and meanwhile, the device structure is relatively simple, which becomes a technical problem to be solved urgently at present.

SUMMERY OF THE UTILITY MODEL

Introduce simultaneously to present how to meet an emergency technique and SOI technique in the device structure of small-size gaN/AlGaN/AlN HBT, the energy band structure and the material parameter that change the device rationally and further improve its high frequency characteristic to how to introduce unipolar compressive stress among the Si base region, improve base region minority carrier electron mobility's technical problem, the utility model provides a horizontal SOI AlGaN/Si HBT device structure of NPN type.

In order to solve the technical problem, the utility model discloses a following technical scheme:

an NPN-type transverse SOI AlGaN/Si HBT device structure comprises an N-type lightly-doped semi-insulating monocrystalline silicon substrate, wherein a buried oxide layer is formed on the surface of the N-type lightly-doped semi-insulating monocrystalline silicon substrate, an emitter region, a base region and a collector region are formed on the surface of the buried oxide layer from left to right, and the emitter region, the base region and the collector region are formed on the surface of the buried oxide layerThe thickness of the emitter region, the thickness of the base region and the thickness of the collector region are the same, the widths of the emitter region, the base region and the collector region are different, a SiON oxide layer and an N-type doped AlGaN layer are deposited in the emitter region and the collector region from bottom to top, a P-type heavily doped Si layer grows in the base region, and the Si layer comprises N with the doping concentration from left to right₁Width of W₁Si thin layer 1 of doping concentration N₂Width of W₂Si thin layer 2, … … with doping concentration of N_nWidth of W_nEach of the Si thin layers N has the same width and satisfies N₁>N₂>...>N_nThe emitter region, the base region and the collector region are respectively provided with an emitter region, a base region and a collector region, the emitter region, the base region and the collector region are respectively provided with an electrode window, the width of each electrode window is smaller than that of the emitter region, the base region and the collector region corresponding to the lower part of the emitter region, the base region and the collector region, and metal silicide is grown in the electrode windows of the emitter region, the base region and the collector region to form an electrode leading-out layer.

Further, the buried oxide layer is SiO with the thickness of 200nm₂And an oxygen burying layer.

Further, the thickness of the emitter region, the base region and the collector region is 30-50 nm, the width of the emitter region and the collector region is 100-200nm, and the width of the base region is 20-30 nm.

Further, the thickness of the SiON oxide layer is 5 nm.

Further, the Si layer comprises doping concentration N from left to right₁Is 1 × 10¹⁹cm^-3Si thin layer 1, doping concentration N₂Is 1 × 10¹⁸cm^-3Si thin layer 2, doping concentration N₃Is 1 × 10¹⁷cm^-3Si thin layer 3, doping concentration N₄Is 1 × 10¹⁶cm^-3Si thin layer 4 and doping concentration N₅Is 1 × 10¹⁵cm^-3The base region has a width of 25nm, and each thin layer has a width of 5 nm.

Further, the isolation oxide layer is SiO₂And oxidizing the layer.

The utility model also provides a preparation method of aforementioned NPN type horizontal SOI AlGaN/Si HBT device structure, the method includes following step:

s1, preparing an SOI structure with undoped intrinsic silicon on the surface and buried oxide layer in the middle, N-type lightly doped semi-insulating monocrystalline silicon as the substrate, and doping concentration of 1 × 10¹⁵cm^-3；

S2, determining the width of an emitting region W in the intrinsic silicon layer_EThe base region has a width W_BThe width of the collector region is W_CEtching off the intrinsic silicon layer in the emitter region and the collector region respectively;

S3W being etched away_EEmission area and W_CA collector region, a SiON oxide layer is grown by CVD;

s4, continuing to grow an AlGaN layer on the surface of the SiON oxide layer in the etching region of the emitter region and the collector region by using MOCVD (metal organic chemical vapor deposition) until the surface of the AlGaN layer is level with the surface of the residual silicon-based region in the middle, and carrying out primary in-situ doping on the grown AlGaN region, wherein the doped impurity atoms are phosphorus or arsenic, and the doping concentration is 1 x 10¹⁷cm^-3Then etching off the silicon region between the two AlGaN regions;

s5, in the leftmost part of the etched silicon area, a layer with N doping concentration is grown first by using the in-situ doping method₁Width W₁Then a layer with the doping concentration of N is grown on the right side of the Si thin layer 1₂Width W₂And wrapping Si thin layer 2, … … of Si thin layer 1, and growing a layer with N doping concentration at the rightmost part in the etched silicon region_nWidth W_nAnd a Si thin layer n wrapping the Si thin layer n-1 and satisfying W₁＝W₂＝W₃＝…W_n＝W_B/n，N₁>N₂>...>N_nThus far etched W_BIn the range of the base region, the n Si thin layers jointly form a P-type heavily doped Si layer with gradually changed doping concentration from left to right, the doping impurity of the Si layer is boron, and the doping concentration of the boron at the leftmost part in the etched silicon region is 1 multiplied by 10¹⁹cm^-3；

S6, mixing W_BPerforming chemical mechanical polishing treatment on the redundant part of the doping concentration gradient area exceeding the AlGaN layer thickness in the base area range, and removing the redundant part to ensure that the Si area with the gradient doping concentration has the same thickness as the AlGaN area of the emitter area and the collector area;

s7, continuing to dope the AlGaN region of the emitter for the second time, wherein the secondary doping impurity atoms are the same as the first doping impurity atoms in the step S4, and the secondary doping concentration is 1 multiplied by 10¹⁹cm^-3；

S8, continuously depositing an isolation oxide layer on the surfaces of an emitter region, a base region and a collector region, defining electrode windows of the emitter region, the base region and the collector region in the isolation oxide layer, wherein the electrode windows of the emitter region, the base region and the collector region are opposite to those of the emitter region, the base region and the collector region below, the width of each electrode window is smaller than that of the corresponding emitter region, the base region and the collector region below, and then etching the isolation oxide layer in each electrode window region;

and S9, growing metal silicide in each etched electrode window region in an evaporation mode to form an electrode lead-out layer, namely an electrode contact layer, and finishing the manufacturing of the device.

Further, the doping concentrations of the n Si thin layers in the step S5 are gradually changed from large to small from left to right in an equal ratio sequence.

Further, the etched W in the step S5_BThe base region width is 25nm, and the P-type heavily doped Si layer comprises a doping concentration N from left to right₁Is 1 × 10¹⁹cm^-3Width W₁5nm of Si thin layer 1, doping concentration N₂Is 1 × 10¹⁸cm^-3Width W₂5nm of Si thin layer 2, doping concentration N₃Is 1 × 10¹⁷cm^-3Width W₃5nm of Si thin layer 3, doping concentration N₄Is 1 × 10¹⁶cm^-3Width W₄A 5nm Si thin layer 4, and a doping concentration N₅Is 1 × 10¹⁵cm^-3Width W₅A 5nm thin layer 5 of Si.

Further, in the step S9, the metal silicide is TiSi₂Or CoSi₂Or NiSi₂。

Compared with the prior art, the utility model provides a horizontal SOI AlGaN/Si HBT device structure of NPN type and preparation method thereof has following technical advantage:

1. because the quality of the AlGaN material layer which is directly grown on the buried oxide layer (BOX) is not very high, the interface defect density is larger, and the electrical characteristics of the device are deteriorated, the application proposes that a very thin SiON oxide layer is added between the buried oxide layer and the AlGaN layer to be used as a buffer layer so as to improve the interface characteristics of the AlGaN layer on the buffer layer; SiON has three main advantages: 1) the dielectric constant is high, the surface local electric field at the interface of the buried oxide layer can be reduced, and the breakdown voltage of the device is improved; 2) the interface characteristic of the AlGaN/buried oxide layer is improved, and the leakage current at the interface can be greatly reduced; 3) nitrogen in the SiON has a good blocking effect on heavily doped boron ions in the Si base region, and boron particles are prevented from diffusing to the oxygen burying layer and the Si substrate below the oxygen burying layer in the thermal annealing treatment;

2. the initial material of the emitter region, the base region and the collector region is Si, regions with preset widths are respectively etched in the two side regions of the Si layer to serve as the emitter region and the collector region, an extremely thin SiON oxide layer is firstly grown in the two etching regions by using a selective epitaxial growth technology to improve the interface state of AlGaN and a buried layer, and then AlGaN is continuously filled, because the lattice constant of AlGaN is larger than that of Si, uniaxial compressive stress can be generated in the Si base region, the mobility of electrons in the Si base region can be greatly improved as well as uniaxial tensile stress, the base region transit time is reduced, and the frequency of a device is improved; the AlGaN forbidden band width of the emitting region and the collecting region is also large, so that the breakdown voltage of the device can be improved; at the moment, the emitter junction and the collector junction have the same junction area, so that the emitter junction and the collector junction have smaller collector junction area compared with a traditional vertical (longitudinal) HBT structure, and the frequency characteristic is more excellent; in addition, the Si of the base region can adopt a selective epitaxy technology, and is epitaxially grown for multiple times at different doping concentrations each time, and the doping concentration is continuously reduced from left to right, so that concentration gradient from high to low is realized from left to right in the base region, a self-established electric field caused by the concentration gradient is introduced into the base region, the base region transit time is further reduced, and the frequency characteristic of the device is improved;

3. in the metal silicides widely used at present, the metal silicides have very ideal physical properties of materials, such as high conductivity, high selectivity, excellent thermal stability, better silicon adsorption, good process adaptability and very low signal interference, so that an extremely thin metal silicide layer can be respectively used for forming good Schottky contact with semiconductor materials of an emitter region, a base region and a collector region, thereby ensuring excellent contact interface characteristics and improving the switching speed and cut-off frequency of a device.

Drawings

Fig. 1 is a schematic structural diagram of an NPN-type lateral SOI AlGaN/Si HBT device provided in the present invention.

Fig. 2a to 2h are schematic cross-sectional structure diagrams at each flow stage in the method for manufacturing an NPN-type lateral SOI AlGaN/Si HBT device structure according to the present invention.

Detailed Description

In order to make the technical means, creation features, achievement purposes and functions of the present invention easy to understand and understand, the present invention is further explained by combining with the specific drawings.

In the description of the present invention, it is to be understood that the terms "longitudinal", "radial", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are merely for convenience of description and to simplify the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention. In the description of the present invention, "a plurality" means two or more unless otherwise specified.

Referring to fig. 1, the present invention provides an NPN type transverse SOI AlGaN/Si HBT device structure, including N type light doping semi-insulating monocrystalline silicon substrate, N type light doping semi-insulating monocrystalline silicon substrate surface is formed with the buried oxide layer, the surface of buried oxide layer is formed with emitter region, base region and collecting region from a left side to a right side, the thickness in three regions of emitter region, base region and collecting region is the same and the width is different, and three regions have the same thickness and different width promptly, from the bottom up deposit has SiON oxide layer and N type to mix AlGaN layer in emitter region and collecting region, promptly semiconductor material in emitter region and collecting region is SiON oxide layer and N type doped GaN layer, it has P type heavily doped Si layer to grow in the base region, Si layer is including doping concentration as N type doped GaN layer from a left side to a right side₁Width of W₁Si thin layer 1 of doping concentration N₂Width of W₂Si thin layer 2, … … with doping concentration of N_nWidth of W_nEach of the Si thin layers N has the same width and satisfies N₁>N₂>...>N_nIn the range of the base region, a P-type heavily doped Si layer is formed from left to right, the doping concentration of the P-type heavily doped Si layer gradually changes from large to small, isolation oxide layers are deposited on the surfaces of an emitter region, a base region and a collector region, electrode windows of the emitter region, the base region and the collector region are formed in the positions, corresponding to the emitter region, the base region and the collector region, of the isolation oxide layers below the isolation oxide layers, the width of each electrode window is smaller than that of the emitter region, the base region and the collector region corresponding below the isolation oxide layers, therefore, the isolation of the electrode windows by taking the isolation oxide layers as insulating media is realized, and metal silicides are grown in the electrode windows of the emitter region, the base region and the collector region to form an electrode leading-out layer, namely.

As a specific embodiment, the buried oxide layer is SiO with the thickness of 200nm₂And the oxygen is buried, so that the self-heating effect of the substrate can be reduced.

As a specific embodiment, the thicknesses of the emitter region, the base region and the collector region are 30-50 nm, and if the thicknesses are too thick, the difficulty of a subsequent manufacturing process is increased; the width of the emitter region and the collector region is 100-200nm, the width of the base region is 20-30 nm, when the width of the base region is less than 20nm, electrons in the base region pass in a ballistic transport mode, a speed overshoot effect is easy to occur, at the moment, the mode that the Ge component of the base region is gradually changed is invalid, but when the width of the base region exceeds 30nm, the transit time of the base region is increased, and the frequency performance is reduced; the emitter region and the collector region are required to have a relatively large width, so that the series resistance of the emitter region and the capacitance of the collector region can be reduced, and the frequency of the device can be increased, so that the typical width of the emitter region and the collector region in the process is 100-200 nm.

As a specific example, the SiON oxide layer has a thickness of 5nm, that is, an extremely thin SiON oxide layer is added between the buried oxide layer and the AlGaN layer as a buffer layer, whereby the interface characteristics of the AlGaN layer on the SiON oxide layer can be improved.

As a specific embodiment, the Si layer comprises a doping concentration N from left to right₁Is 1 × 10¹⁹cm^-3Si thin layer 1, doping concentration N₂Is 1 × 10¹⁸cm^-3Si thin layer 2, doping concentration N₃Is 1 × 10¹⁷cm^-3Si thin layer 3, doping concentration N₄Is 1 × 10¹⁶cm^-3Si thin layer 4 and doping concentration N₅Is 1 × 10¹⁵cm^-3The thin Si layer 5 is formed by growing 5 layers of Si in the base region from left to right, the width of the base region is 25nm, and according to the fact that the widths of the thin Si layers are equal in the growing process, the width of each thin Si layer is 5nm, so that a gradient region with doping concentration from large to small or a concentration gradient with doping concentration from high to low is formed in the base region range from left to right, a self-established electric field caused by the concentration gradient is introduced into the base region, namely an accelerating electric field beneficial to electron transport is formed in the base region, base transit time is further reduced, and frequency characteristics of the device are improved.

In one embodiment, the isolation oxide layer is SiO₂Oxide layer passing through the SiO₂The oxide layer can realize the isolation between the electrode areas by an insulating medium.

s1, preparing an SOI structure with undoped intrinsic silicon on the surface and buried oxide layer such as SiO in the middle₂The thickness of the substrate is set to be 200nm so as to reduce the self-heating effect of the substrate, the substrate is monocrystalline silicon of an N-type lightly doped semi-insulating (001) crystal plane, and the doping concentration is 1 multiplied by 10¹⁵cm^-3The specific structure is shown in fig. 2 a; at this moment, the thickness of the intrinsic silicon layer on the surface can be used as the thickness of a subsequent emitter region, a base region and a collector region, and is usually 30-50 nm, and the subsequent process difficulty is increased due to excessive thickness;

s2, determining the width of an emitting region W in the intrinsic silicon layer_EThe base region has a width W_BThe width of the collector region is W_CThen, etching off the intrinsic silicon layer in the emitter region and the collector region on the SOI structure, as shown in fig. 2 b;

S3W being etched away_EEmission area and W_CIn the collector region, an extremely thin (e.g. 5nm) SiON oxide layer is grown by conventional CVD (chemical vapor deposition), and the specific structure is shown in fig. 2 c;

s4, continuing to grow an AlGaN layer on the surface of the SiON oxide layer in the etching region of the emitter region and the collector region by using the existing MOCVD (metal organic chemical vapor deposition) method until the surface of the AlGaN layer is flush with the surface of the residual silicon-based region in the middle, and carrying out primary in-situ (in-situ) doping on the grown AlGaN region, wherein the doped impurity atoms are phosphorus (P) or arsenic (As), and the typical value of the doping concentration is 1 x 10¹⁷cm^-3Then, etching (for example, using the existing dry etching or plasma etching method) to remove the silicon region between the two AlGaN regions, and the specific structure is shown in fig. 2 d;

s5, in the leftmost part of the etched silicon area, a layer with N doping concentration is grown first by using the in-situ doping method₁Width W₁Then a layer with the doping concentration of N is grown on the right side of the Si thin layer 1₂Width W₂And wrapping Si thin layer 2, … … of Si thin layer 1, and growing a layer with N doping concentration at the rightmost part in the etched silicon region_nWidth W_nAnd a Si thin layer n wrapping the Si thin layer n-1 and satisfying W₁＝W₂＝W₃＝…W_n＝W_B/n，N₁>N₂>...>N_nThus far etched W_BIn the range of the base region, the n Si thin layers jointly form a P-type heavily doped Si layer with the doping concentration gradually changing from left to right, and the specific structure is shown in fig. 2e, so that an accelerating electric field beneficial to electron transportation is formed in the base region; wherein the doping (i.e. in-situ doping) impurity of the Si layer is boron, and the doping concentration of boron in the leftmost part of the etched silicon region is 1 × 10¹⁹cm^-3；

S6, mixing W_BPerforming Chemical Mechanical Polishing (CMP) on the excess part of the doping concentration gradient region in the base region, which exceeds the thickness of the AlGaN layer, and removing the excess part to make the Si region with the doping concentration gradient have the same thickness as the AlGaN region in the emitter region and the collector region, wherein the specific structure is shown in fig. 2 f;

s7, continuing to dope the AlGaN region of the emitter region for the second time to ensure the emitter region has a high doping concentration, wherein the secondary doping impurity atoms are phosphorus or arsenic as the same as the primary doping impurity atoms in the step S4, and the secondary doping concentration is 1 × 10¹⁹cm^-3；

S8, depositing an isolation oxide layer such as SiO on the surfaces of the emitter region, the base region and the collector region₂An oxide layer, wherein electrode windows of an emitter region, a base region and a collector region are defined in the isolation oxide layer, the electrode windows of the emitter region, the base region and the collector region are opposite to an emitter region, the base region and the collector region below the emitter region, and the width of each electrode window is smaller than the width of the corresponding emitter region, base region and collector region below the emitter region, namely the electrode window of the emitter region is opposite to the emitter region and is smaller than the width of the emitter region, the electrode window of the base region is opposite to the base region and is smaller than the width of the base region, the electrode window of the collector region is opposite to the collector region and is smaller than the width of the collector region, then the isolation oxide layer in each electrode window region is etched, and finally 4 isolation oxide layers between adjacent electrode windows are reserved, wherein the specific structure;

s9, growing metal silicide in each etched electrode window area in an evaporation mode to form an electrode lead-out layer, namely an electrode contact layer, so as to form electrode lead-out layers of an emitter, a base and a collector, and the device is manufactured at the end, wherein the specific structure is shown in fig. 2 h; wherein the metal silicide is TiSi₂Or CoSi₂Or NiSi₂And the like.

As a specific embodiment, in step S5, the doping concentration of the n Si thin layers is gradually changed from large to small from left to right in an equal ratio sequence, so that the etched W is etched_BIn the range of the base region, a gradual change region with the doping concentration from large to small is formed from left to right.

As a specific embodiment, the etched W in the step S5_BThe base region width value is not too large, the typical value is generally 20-30 nm, and the typical width value of the emitter region and the collector region is 100-200nm at the moment; as a specific implementation manner, the W etched in the step S5_BThe base region width is 25nm, 5 layers of Si grow from left to right according to the growth mode, and specifically, the P-type heavily doped Si layer comprises doping concentration N from left to right₁Is 1 × 10¹⁹cm^-3Width W₁5nm of Si thin layer 1, doping concentration N₂Is 1 × 10¹⁸cm^-3Width W₂5nm of Si thin layer 2, doping concentration N₃Is 1 × 10¹⁷cm^-3Width W₃5nm of Si thin layer 3, doping concentration N₄Is 1 × 10¹⁶cm^-3Width W₄A 5nm Si thin layer 4, and a doping concentration N₅Is 1 × 10¹⁵cm^-3Width W₅5nm, so that the doping concentration in each Si thin layer is gradually changed from small to large from left to right in an equal-ratio series, and the width of each Si thin layer is equal.

Finally, although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the present invention can be modified or replaced by other means without departing from the spirit and scope of the present invention, which should be construed as limited only by the appended claims.

Claims

1. An NPN-type transverse SOI AlGaN/Si HBT device structure is characterized by comprising an N-type lightly-doped semi-insulating monocrystalline silicon substrate, wherein a buried oxide layer is formed on the surface of the N-type lightly-doped semi-insulating monocrystalline silicon substrate, an emitter region, a base region and a collector region are formed on the surface of the buried oxide layer from left to right, the thickness of the emitter region, the thickness of the base region and the thickness of the collector region are the same, the widths of the emitter region, the base region and the collector region are different, an SiON oxide layer and an N-type doped AlGaN layer are deposited in the emitter region and the collector region from bottom to top, a P-type heavily-doped Si layer grows in the base region, and the doping concentration of the Si₁Width of W₁Si thin layer 1 of doping concentration N₂Width of W₂Si thin layer 2, … … with doping concentration of N_nWidth of W_nEach of the Si thin layers N has the same width and satisfies N₁>N₂>...>N_nThe emitter region, the base region and the collector region are respectively provided with an emitter region, a base region and a collector region, the emitter region, the base region and the collector region are respectively provided with an electrode window, the width of each electrode window is smaller than that of the emitter region, the base region and the collector region corresponding to the lower part of the emitter region, the base region and the collector region, and metal silicide is grown in the electrode windows of the emitter region, the base region and the collector region to form an electrode leading-out layer.

2. The NPN lateral SOI AlGaN/Si HBT device structure of claim 1, wherein the buried oxide layer is SiO 200nm thick₂And an oxygen burying layer.

3. The NPN-type lateral SOI AlGaN/Si HBT device structure of claim 1, wherein the thickness of the emitter region, the base region and the collector region is 30-50 nm, the width of the emitter region and the collector region is 100-200nm, and the width of the base region is 20-30 nm.

4. The NPN lateral SOI AlGaN/Si HBT device structure according to claim 1, wherein the SiON oxide layer has a thickness of 5 nm.

5. The NPN-type lateral SOI AlGaN/Si HBT device structure of claim 1, wherein the isolation oxide layer is SiO₂And oxidizing the layer.