CN211577329U - MOS manages self-checking circuit and electric motor car - Google Patents
MOS manages self-checking circuit and electric motor car Download PDFInfo
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- CN211577329U CN211577329U CN201922013744.8U CN201922013744U CN211577329U CN 211577329 U CN211577329 U CN 211577329U CN 201922013744 U CN201922013744 U CN 201922013744U CN 211577329 U CN211577329 U CN 211577329U
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Abstract
The embodiment of the utility model discloses MOS manages self-checking circuit and electric motor car, this self-checking circuit includes: the self-checking circuit comprises an A-phase voltage acquisition end, a B-phase voltage acquisition end and a C-phase voltage acquisition end; by detecting the voltage signals of the voltage division circuits of the three-phase driving bridge arm circuit and judging the change of the voltage signals of the voltage division circuits of the three-phase driving bridge arm circuit by the controller, whether the MOS tubes of each phase are damaged and directly connected can be judged, and the effect of self-checking the MOS tubes is realized in a simple and effective mode.
Description
Technical Field
The embodiment of the utility model provides a relate to motor drive control technique, especially relate to a MOS manages self-checking circuit and electric motor car.
Background
The MOS transistor is a relatively fragile device, and is often short-circuited due to various reasons, and once the short-circuit occurs, great damage may be generated, such as damage to the controller, damage to other MOS transistors, and the like, so that the MOS transistor is particularly necessary for self-inspection of the controller MOS.
The common self-checking mode is as follows: one method is to realize the switching sequence of the MOS tube by controlling the PWM wave-emitting mode, and then judge whether the MOS tube is damaged and directly connected or not by acquiring whether the sampling resistor on the bus has large current or not; the other is to provide a MOS tube self-checking circuit and method of a three-phase DC brushless motor, which comprises a self-checking voltage division circuit (comprising a bootstrap diode, a bootstrap capacitor, a voltage division resistor for self-checking and a sampling resistor), an acquisition module, a reference module and a comparison module, wherein a voltage signal is sampled by the self-checking voltage division circuit, then the voltage signal is sent to the comparison module through the acquisition module and is compared with a reference voltage generated by the reference module, and a comparison result is used as the basis for MOS tube self-checking judgment.
The method can realize the self-inspection of the MOS tube after the controller is electrified, but still has the following defects: in the former, when the MOS tube is damaged and directly connected, abnormal large current generated can cause the phenomenon that other normal MOS tubes are damaged or damaged; the latter involves a large amount of hardware, and its hardware circuit is comparatively complicated, and use cost is high.
SUMMERY OF THE UTILITY MODEL
The utility model provides a MOS manages self-checking circuit and electric motor car to the self-checking to each MOS pipe is realized to simple, effective mode.
In a first aspect, an embodiment of the present invention provides a MOS transistor self-checking circuit, which includes: the self-checking circuit comprises an A-phase voltage acquisition end, a B-phase voltage acquisition end and a C-phase voltage acquisition end; the first voltage division circuit is connected with an upper bridge arm of an A-phase bridge arm of the three-phase bridge arm circuit in parallel, the second voltage division circuit is connected with a lower bridge arm of the A-phase bridge arm of the three-phase bridge arm circuit in parallel, and an A-phase voltage acquisition end is connected with a voltage division signal output end of the first voltage division circuit or a voltage division signal output end of the second voltage division circuit;
the third voltage division circuit is connected with the upper bridge arm of the B-phase bridge arm of the three-phase bridge arm circuit in parallel, the fourth voltage division circuit is connected with the lower bridge arm of the B-phase bridge arm of the three-phase bridge arm circuit in parallel, and the B-phase voltage acquisition end is connected with the voltage division signal output end of the third voltage division circuit or the voltage division signal output end of the fourth voltage division circuit;
the third voltage division circuit is connected with the upper bridge arm of the C-phase bridge arm of the three-phase bridge arm circuit in parallel, the fourth voltage division circuit is connected with the lower bridge arm of the C-phase bridge arm of the three-phase bridge arm circuit in parallel, and the C-phase voltage acquisition end is connected with the voltage division signal output end of the third voltage division circuit or the voltage division signal output end of the fourth voltage division circuit.
Optionally, the first voltage dividing circuit includes a first resistor, the third voltage dividing circuit includes a second resistor, and the fifth voltage dividing circuit includes a third resistor; the A-phase voltage acquisition end is connected with the voltage division signal output end of the second voltage division circuit, the B-phase voltage acquisition end is connected with the voltage division signal output end of the fourth voltage division circuit, and the C-phase voltage acquisition end is connected with the voltage division signal output end of the sixth voltage division circuit.
Optionally, the second voltage dividing circuit includes a fourth resistor and a fifth resistor, the fourth voltage dividing circuit includes a sixth resistor and a seventh resistor, and the sixth voltage dividing circuit includes an eighth resistor and a ninth resistor;
the fourth resistor and the fifth resistor are connected in series and then connected in parallel with a lower bridge arm of an A-phase bridge arm of the three-phase bridge arm circuit;
the sixth resistor and the seventh resistor are connected in series and then connected in parallel with a lower bridge arm of a B-phase bridge arm of the three-phase bridge arm circuit;
the eighth resistor and the ninth resistor are connected in series and then connected in parallel with the lower bridge arm of the C-phase bridge arm of the three-phase bridge arm circuit;
the connection end of the fourth resistor and the fifth resistor is electrically connected with the A-phase voltage acquisition end;
the connection end of the sixth resistor and the seventh resistor is electrically connected with the B-phase voltage acquisition end;
and the connection end of the eighth resistor and the ninth resistor is electrically connected with the C-phase voltage acquisition end.
Optionally, the self-checking circuit further includes a power supply, a bus resistor and a bus current collecting module, wherein the positive electrode of the power supply is connected with the upper bridge arm of the a-phase bridge arm, the upper bridge arm of the B-phase bridge arm and the upper bridge arm of the C-phase bridge arm of the three-phase bridge arm circuit, the negative electrode of the power supply is connected with the lower bridge arm of the a-phase bridge arm, the lower bridge arm of the B-phase bridge arm and the lower bridge arm of the C-phase bridge arm of the three-phase bridge arm circuit, and the bus resistor is connected in series with the negative circuit; the bus current acquisition module is connected with the bus resistor in parallel and used for detecting the current value of the bus resistor.
Optionally, the self-checking circuit further comprises a controller, the controller further comprises a bus current collecting end, the bus current collecting module further comprises a signal output end, and the bus current collecting end of the controller is electrically connected with the signal output end of the bus current collecting module and used for collecting a current signal of the bus resistor.
Optionally, the three-phase bridge arm circuit includes a first MOS transistor, a second MOS transistor, a third MOS transistor, a fourth MOS transistor, a fifth MOS transistor, a sixth MOS transistor, and a power supply;
the first pole of the first MOS tube is connected with the positive pole of the power supply, the second pole of the first MOS tube is connected with the first pole of the second MOS tube, and the second pole of the second MOS tube is connected with the negative pole of the power supply;
the first pole of the third MOS tube is connected with the positive pole of the power supply, the second pole of the third MOS tube is connected with the first pole of the fourth MOS tube, and the second pole of the fourth MOS tube is connected with the negative pole of the power supply;
the first pole of the fifth MOS tube is connected with the positive pole of the power supply, the second pole of the fifth MOS tube is connected with the first pole of the sixth MOS tube, and the second pole of the sixth MOS tube is connected with the negative pole of the power supply.
Optionally, the three-phase bridge arm circuit further includes a first diode, a second diode, a third diode, a fourth diode, a fifth diode, and a sixth diode;
the first diode is connected with the first MOS tube in parallel, the cathode of the first diode is electrically connected with the first pole of the first MOS tube, and the anode of the first diode is electrically connected with the second pole of the first MOS tube;
the second diode is connected with the second MOS tube in parallel, the cathode of the second diode is electrically connected with the first pole of the second MOS tube, and the anode of the second diode is electrically connected with the second pole of the second MOS tube;
the third diode is connected with the third MOS tube in parallel, the cathode of the third diode is electrically connected with the first pole of the third MOS tube, and the anode of the third diode is electrically connected with the second pole of the third MOS tube;
the fourth diode is connected with the fourth MOS tube in parallel, the cathode of the fourth diode is electrically connected with the first pole of the fourth MOS tube, and the anode of the fourth diode is electrically connected with the second pole of the fourth MOS tube;
the fifth diode is connected with the fifth MOS tube in parallel, the cathode of the fifth diode is electrically connected with the first pole of the fifth MOS tube, and the anode of the fifth diode is electrically connected with the second pole of the fifth MOS tube;
the sixth diode is connected with the sixth MOS tube in parallel, the cathode of the sixth diode is electrically connected with the first pole of the sixth MOS tube, and the anode of the sixth diode is electrically connected with the second pole of the sixth MOS tube.
In a second aspect, the embodiment of the present invention further provides an electric vehicle, which includes the first aspect of the MOS transistor self-checking circuit.
The utility model discloses a MOS manages self-checking circuit, include: the self-checking circuit comprises an A-phase voltage acquisition end, a B-phase voltage acquisition end and a C-phase voltage acquisition end; the first voltage division circuit is connected with an upper bridge arm of an A-phase bridge arm of the three-phase bridge arm circuit in parallel, the second voltage division circuit is connected with a lower bridge arm of the A-phase bridge arm of the three-phase bridge arm circuit in parallel, and an A-phase voltage acquisition end is connected with a voltage division signal output end of the first voltage division circuit or a voltage division signal output end of the second voltage division circuit; the third voltage division circuit is connected with the upper bridge arm of the B-phase bridge arm of the three-phase bridge arm circuit in parallel, the fourth voltage division circuit is connected with the lower bridge arm of the B-phase bridge arm of the three-phase bridge arm circuit in parallel, and the B-phase voltage acquisition end is connected with the voltage division signal output end of the third voltage division circuit or the voltage division signal output end of the fourth voltage division circuit; the third voltage division circuit is connected with the upper bridge arm of the C-phase bridge arm of the three-phase bridge arm circuit in parallel, the fourth voltage division circuit is connected with the lower bridge arm of the C-phase bridge arm of the three-phase bridge arm circuit in parallel, and the C-phase voltage acquisition end is connected with the voltage division signal output end of the third voltage division circuit or the voltage division signal output end of the fourth voltage division circuit. Therefore, whether each phase of MOS tube is damaged and straight-through can be judged by detecting the voltage signal of each voltage division circuit of the three-phase driving bridge arm circuit and judging the change of the voltage signal of each voltage division circuit of the three-phase driving bridge arm circuit by the controller, the problems that the number of hardware of a self-checking circuit is large and the implementation process is complex in the prior art are solved, and the effect of simply and effectively realizing the self-checking of each MOS tube is realized.
Drawings
Fig. 1 is a circuit diagram of a self-test circuit of a MOS transistor according to a first embodiment of the present invention;
fig. 2 is a circuit diagram of another MOS transistor self-test circuit according to the first embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Example one
Fig. 1 is the first embodiment of the present invention provides a circuit diagram of a self-checking circuit for MOS transistor, and fig. 2 is the first embodiment of the present invention provides a circuit diagram of another self-checking circuit for MOS transistor. Referring to fig. 1, the self-test circuit includes:
the self-test bridge arm comprises a three-phase bridge arm circuit, a first voltage division circuit 110, a second voltage division circuit 120, a third voltage division circuit 130, a fourth voltage division circuit 140, a fifth voltage division circuit 150 and a sixth voltage division circuit 160, and the self-test circuit further comprises an A-phase voltage acquisition end 310, a B-phase voltage acquisition end 320 and a C-phase voltage acquisition end 330; the first voltage division circuit 110 is connected in parallel with the upper bridge arm 210 of the a-phase bridge arm of the three-phase bridge arm circuit, the second voltage division circuit 120 is connected in parallel with the lower bridge arm 220 of the a-phase bridge arm of the three-phase bridge arm circuit, and the a-phase voltage acquisition end 310 is connected with the voltage division signal output end 111 of the first voltage division circuit 110 or the voltage division signal output end 121 of the second voltage division circuit 120;
the third voltage division circuit 130 is connected in parallel with the upper bridge arm 230 of the B-phase bridge arm of the three-phase bridge arm circuit, the fourth voltage division circuit 140 is connected in parallel with the lower bridge arm 240 of the B-phase bridge arm of the three-phase bridge arm circuit, and the B-phase voltage acquisition end 320 is connected with the voltage division signal output end 131 of the third voltage division circuit 130 or the voltage division signal output end 141 of the fourth voltage division circuit 140;
the fifth voltage division circuit 150 is connected in parallel with the upper arm 250 of the C-phase arm of the three-phase arm circuit, the sixth voltage division circuit 160 is connected in parallel with the lower arm 260 of the C-phase arm of the three-phase arm circuit, and the C-phase voltage acquisition terminal 330 is connected with the voltage division signal output terminal 151 of the fifth voltage division circuit 150 or the voltage division signal output terminal 161 of the sixth voltage division circuit 160.
In the technical solution of this embodiment, referring to fig. 1, the implementation process of the self-checking circuit is as follows: first, only the case where the upper arm and the lower arm of any one phase arm of the circuit of the three-phase drive arm do not simultaneously damage the through-connection will be discussed here. First, referring to fig. 1, for example, the a-phase voltage acquisition terminal 310 is connected to the divided signal output terminal 121 of the second voltage dividing circuit 120, the B-phase voltage acquisition terminal 320 is connected to the divided signal output terminal 141 of the fourth voltage dividing circuit 140, and the C-phase voltage acquisition terminal 330 is connected to the divided signal output terminal 161 of the sixth voltage dividing circuit 160. Taking the a-phase bridge arm as an example, whether the a-phase bridge arm is damaged and straight-through can be determined by sampling the voltage of the a-phase voltage acquisition end 310, and when the voltage sampling value of the a-phase voltage acquisition end 310 is detected to be larger than the preset voltage, it is indicated that the a-phase bridge arm is damaged and straight-through, and the basis for the judgment is as follows: when the upper bridge arm of the phase a is damaged and is directly connected, the lower bridge arm of the phase a is not connected, the first voltage division circuit 110 is short-circuited, and the second voltage division circuit 120 bears a larger voltage, so that the voltage flowing through the second voltage division circuit 120 is abnormally increased, and thus the voltage value detected by the phase a voltage acquisition terminal 310 is abnormally larger; when the voltage sampling value of the A-phase voltage acquisition end 310 is detected to be zero, the A-phase lower bridge arm is damaged and directly connected, and the judgment basis is as follows: when the a-phase lower arm is damaged and is directly connected, the a-phase upper arm is not connected, and at this time, the first voltage division circuit 110 may bear a larger voltage, and the second voltage division circuit 120 is short-circuited, so that the voltage detected by the a-phase voltage acquisition terminal 310 is zero. Similarly, the B-phase bridge arm and the C-phase bridge arm are also judged by this method, which is not described herein.
Similarly, when the a-phase voltage collecting terminal 310 is connected to the divided voltage signal output terminal 111 of the first voltage dividing circuit 110, the B-phase voltage collecting terminal 320 is connected to the divided voltage signal output terminal 131 of the third voltage dividing circuit 130, and the C-phase voltage collecting terminal 330 is connected to the divided voltage signal output terminal 151 of the fifth voltage dividing circuit 150, the determination is also performed by the above method, which is not described herein.
The technical scheme of this embodiment, through providing a MOS pipe self-checking circuit, include: the self-checking circuit comprises an A-phase voltage acquisition end, a B-phase voltage acquisition end and a C-phase voltage acquisition end; the first voltage division circuit is connected with an upper bridge arm of an A-phase bridge arm of the three-phase bridge arm circuit in parallel, the second voltage division circuit is connected with a lower bridge arm of the A-phase bridge arm of the three-phase bridge arm circuit in parallel, and an A-phase voltage acquisition end is connected with a voltage division signal output end of the first voltage division circuit or a voltage division signal output end of the second voltage division circuit; the third voltage division circuit is connected with the upper bridge arm of the B-phase bridge arm of the three-phase bridge arm circuit in parallel, the fourth voltage division circuit is connected with the lower bridge arm of the B-phase bridge arm of the three-phase bridge arm circuit in parallel, and the B-phase voltage acquisition end is connected with the voltage division signal output end of the third voltage division circuit or the voltage division signal output end of the fourth voltage division circuit; the third voltage division circuit is connected with the upper bridge arm of the C-phase bridge arm of the three-phase bridge arm circuit in parallel, the fourth voltage division circuit is connected with the lower bridge arm of the C-phase bridge arm of the three-phase bridge arm circuit in parallel, and the C-phase voltage acquisition end is connected with the voltage division signal output end of the third voltage division circuit or the voltage division signal output end of the fourth voltage division circuit. Therefore, whether each phase of MOS tube is damaged and straight-through can be judged by detecting the voltage signal of each voltage division circuit of the three-phase driving bridge arm circuit and judging the change of the voltage signal of each voltage division circuit of the three-phase driving bridge arm circuit by the controller, the problems that the self-checking circuit in the prior art is large in hardware quantity and complex in implementation process are solved, and the effect of simply and effectively realizing the self-checking of each MOS tube is achieved.
Alternatively, referring to fig. 1 and 2, the first voltage dividing circuit 110 includes a first resistor 112, the third voltage dividing circuit 130 includes a second resistor 132, and the fifth voltage dividing circuit 150 includes a third resistor 152; the a-phase voltage acquisition end 310 is connected with the voltage division signal output end 121 of the second voltage division circuit 120, the B-phase voltage acquisition end 320 is connected with the voltage division signal output end 141 of the fourth voltage division circuit 140, and the C-phase voltage acquisition end 330 is connected with the voltage division signal output end 161 of the sixth voltage division circuit 160.
For example, referring to fig. 2, the first voltage dividing circuit 110 includes a first resistor 112, which includes the first resistor 112, but there is not limited to only one first resistor 112, and there may be two or more first resistors for dividing voltage; similarly, the third voltage dividing circuit 130 includes the second resistor 132, but not limited to only one second resistor 132, there may be two or more; the fifth voltage divider circuit 150 includes the third resistor 152, but there is not limited to only one second resistor 152, and there may be two or more.
Optionally, referring to fig. 2, the second voltage dividing circuit 120 includes a fourth resistor 122 and a fifth resistor 123, the fourth voltage dividing circuit 140 includes a sixth resistor 142 and a seventh resistor 143, and the sixth voltage dividing circuit 160 includes an eighth resistor 162 and a ninth resistor 163;
the fourth resistor 122 and the fifth resistor 123 are connected in series and then connected in parallel with the lower bridge arm 220 of the phase A bridge arm of the three-phase bridge arm circuit;
the sixth resistor 142 and the seventh resistor 143 are connected in series and then connected in parallel with the lower bridge arm 240 of the B-phase bridge arm of the three-phase bridge arm circuit;
the eighth resistor 162 and the ninth resistor 163 are connected in series and then connected in parallel with the lower arm 260 of the C-phase arm of the three-phase arm circuit;
the connection end of the fourth resistor 122 and the fifth resistor 123 is electrically connected with the A-phase voltage acquisition end 310;
the connection end of the sixth resistor 142 and the seventh resistor 143 is electrically connected with the B-phase voltage acquisition end 320;
the connection end of the eighth resistor 162 and the ninth resistor 163 is electrically connected to the C-phase voltage collecting terminal 330.
The fourth resistor 122, the fifth resistor 123, the sixth resistor 142, the seventh resistor 143, the eighth resistor 162, and the ninth resistor 163 are all used for sharing the voltage of the respective loops.
Optionally, the self-checking circuit further includes a power supply 510, a bus resistor 410 and a bus current collection module 420, wherein the positive electrode of the power supply 510 is connected to the upper arm of the a-phase arm, the upper arm of the B-phase arm and the upper arm of the C-phase arm of the three-phase arm circuit, the negative electrode of the power supply 510 is connected to the lower arm of the a-phase arm, the lower arm of the B-phase arm and the lower arm of the C-phase arm of the three-phase arm circuit, and the bus resistor 410 is connected in series to the negative circuit of the three-phase arm circuit; the bus current collecting module 420 is connected in parallel with the bus resistor 410 and is used for detecting the current value of the bus resistor 410.
For example, referring to fig. 2, it can be determined that the upper bridge arm and the lower bridge arm of any phase bridge arm of the three-phase bridge arm circuit are both damaged and straight-through by detecting the current value of the bus resistor 410. When the bus current collecting module 420 collects that the current value of the bus resistor 410 is not zero, it indicates that both the upper bridge arm and the lower bridge arm of the three-phase bridge arm circuit are damaged and are directly connected. The condition that the bridge arms are damaged and straight-through includes that any one of three phases, two or three phases of the upper bridge arm and the lower bridge arm are damaged and straight-through, and the three-phase bridge arm circuit is protected at the moment.
Optionally, the self-test circuit further includes a controller 520, the controller 520 further includes a bus current collecting terminal 521, the bus current collecting module 420 further includes a signal output terminal 421, and the bus current collecting terminal 521 of the controller 520 is electrically connected to the signal output terminal 421 of the bus current collecting module 420, and is configured to collect a current signal of the bus resistor 410.
The controller 520 may be a dc brushless motor controller, and is connected to the signal output terminal 421 of the bus current collecting module 420, the a-phase voltage collecting terminal 310, the B-phase voltage collecting terminal 320, and the C-phase voltage collecting terminal 330. The bus current collection module 420 may be a current transformer.
Optionally, the three-phase bridge arm circuit includes a first MOS transistor 211, a second MOS transistor 221, a third MOS transistor 231, a fourth MOS transistor 241, a fifth MOS transistor 251, a sixth MOS transistor 261, and a power supply 510;
a first pole of the first MOS transistor 211 is connected to the positive pole of the power supply 510, a second pole of the first MOS transistor 211 is connected to a first pole of the second MOS transistor 221, and a second pole of the second MOS transistor 221 is connected to the negative pole of the power supply 510;
a first pole of the third MOS 231 is connected to the positive pole of the power supply 510, a second pole of the third MOS 231 is connected to a first pole of the fourth MOS 241, and a second pole of the fourth MOS 241 is connected to the negative pole of the power supply 510;
a first pole of the fifth MOS tube 251 is connected to the positive pole of the power supply 510, a second pole of the fifth MOS tube 251 is connected to a first pole of the sixth MOS tube 261, and a second pole of the sixth MOS tube 261 is connected to the negative pole of the power supply 510.
The gate of the first MOS transistor 211, the gate of the second MOS transistor 221, the gate of the third MOS transistor 231, the gate of the fourth MOS transistor 241, the gate of the fifth MOS transistor 251, and the gate of the sixth MOS transistor 261 are all electrically connected to the controller 520, and the controller 520 controls on/off of each MOS transistor.
For example, referring to fig. 2, after the controller 520 is powered on, in the self-test process, the gates of the MOS transistors of each phase arm, such as the first MOS transistor 211, the second MOS transistor 221, the third MOS transistor 231, the fourth MOS transistor 241, the fifth MOS transistor 251, and the sixth MOS transistor 261, do not provide a control signal. After the controller 520 is powered on, the bus current collecting module 420 detects whether the bus current at the two ends of the bus resistor 410 is zero, if the bus current is not zero, it indicates that the upper bridge arm and the lower bridge arm of at least one phase of bridge arm are damaged, and at this time, the controller 520 performs protection and alarm operation on the circuit. If the bus current is zero, it indicates that the upper bridge arm and the lower bridge arm are not damaged and straight-through, the upper bridge arm or the lower bridge arm of each phase is continuously detected, that is, the a-phase voltage acquisition end 310, the B-phase voltage acquisition end 320, and the C-phase voltage acquisition end 330 simultaneously and respectively detect the voltage division signal output end 121 of the second voltage division circuit 120, the voltage division signal output end 141 of the fourth voltage division circuit 140, and the voltage division signal output end 161 of the sixth voltage division circuit 160, and determine whether the MOS transistor of each bridge arm of three phases is damaged and straight-through according to the preset voltage set by the controller 520.
For example, referring to fig. 2, taking an a-phase bridge arm as an example, whether the a-phase bridge arm is damaged and straight through may be determined by sampling a voltage of an a-phase voltage acquisition end 310, and when it is detected that a voltage sampling value of the a-phase voltage acquisition end 310 is abnormally larger than a preset voltage, it indicates that the a-phase upper bridge arm first MOS transistor 211 is damaged and straight through. The basis for this determination is: when the first MOS transistor 211 is damaged and is turned on directly, since the second MOS transistor 221 is in a non-normal state, the first resistor 112 is short-circuited, the fourth resistor 122 and the fifth resistor 123 can bear a large voltage, and the voltage flowing through the fourth resistor 122 and the fifth resistor 123 is abnormally large; when the voltage sampling value of the a-phase voltage acquisition terminal 310 is detected to be zero, it indicates that the a-phase lower bridge arm second MOS tube 221 is damaged and straight-through. The basis for this determination is: when the second MOS transistor 221 is damaged and is turned on, since the first MOS transistor 211 is in a non-normal state, the fourth resistor 122 and the fifth resistor 123 are short-circuited, the first resistor 112 will bear a large voltage, and the voltage flowing through the first resistor 112 will be abnormally large, so that the voltage detected by the a-phase voltage collecting terminal 310 is zero. Similarly, the B-phase bridge arm and the C-phase bridge arm are also judged by this method, which is not described herein.
Optionally, the three-phase bridge arm circuit further includes a first diode 212, a second diode 222, a third diode 232, a fourth diode 242, a fifth diode 252, and a sixth diode 262;
the first diode 212 is connected in parallel with the first MOS transistor 211, a cathode of the first diode 212 is electrically connected to a first pole of the first MOS transistor 211, and an anode of the first diode 212 is electrically connected to a second pole of the first MOS transistor 211;
the second diode 222 is connected in parallel with the second MOS 221, a cathode of the second diode 222 is electrically connected to a first pole of the second MOS 221, and an anode of the second diode 222 is electrically connected to a second pole of the second MOS 221;
the third diode 232 is connected in parallel with the third MOS 231, a cathode of the third diode 232 is electrically connected to a first pole of the third MOS 231, and an anode of the third diode 232 is electrically connected to a second pole of the third MOS 231;
the fourth diode 242 is connected in parallel with the fourth MOS transistor 241, a cathode of the fourth diode 242 is electrically connected to a first pole of the fourth MOS transistor 241, and an anode of the fourth diode 242 is electrically connected to a second pole of the fourth MOS transistor 241;
the fifth diode 252 is connected in parallel with the fifth MOS tube 251, a cathode of the fifth diode 252 is electrically connected with a first pole of the fifth MOS tube 251, and an anode of the fifth diode 252 is electrically connected with a second pole of the fifth MOS tube 251;
the sixth diode 262 is connected in parallel to the sixth MOS transistor 261, a negative electrode of the sixth diode 262 is electrically connected to a first electrode of the sixth MOS transistor 261, and a positive electrode of the sixth diode 262 is electrically connected to a second electrode of the sixth MOS transistor 261.
Among them, the first diode 212, the second diode 222, the third diode 232, the fourth diode 242, the fifth diode 252, and the sixth diode 262 are used for freewheeling.
Example two
The embodiment of the utility model provides an electric motor car is still provided, the embodiment of the utility model provides an electric motor car can include the utility model discloses the MOS pipe self-checking circuit that arbitrary embodiment provided possesses the corresponding functional module of MOS pipe self-checking circuit and beneficial effect.
The electric vehicle can be a two-wheeled electric vehicle, a three-wheeled electric vehicle, a four-wheeled electric vehicle and the like.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.
Claims (8)
1. A MOS transistor self-test circuit, comprising: the self-checking circuit comprises an A-phase voltage acquisition end, a B-phase voltage acquisition end and a C-phase voltage acquisition end; the first voltage division circuit is connected with an upper bridge arm of an A-phase bridge arm of the three-phase bridge arm circuit in parallel, the second voltage division circuit is connected with a lower bridge arm of the A-phase bridge arm of the three-phase bridge arm circuit in parallel, and the A-phase voltage acquisition end is connected with a voltage division signal output end of the first voltage division circuit or a voltage division signal output end of the second voltage division circuit;
the third voltage division circuit is connected with an upper bridge arm of a B-phase bridge arm of the three-phase bridge arm circuit in parallel, the fourth voltage division circuit is connected with a lower bridge arm of the B-phase bridge arm of the three-phase bridge arm circuit in parallel, and the B-phase voltage acquisition end is connected with a voltage division signal output end of the third voltage division circuit or a voltage division signal output end of the fourth voltage division circuit;
the fifth voltage division circuit is connected with an upper bridge arm of a C-phase bridge arm of the three-phase bridge arm circuit in parallel, the sixth voltage division circuit is connected with a lower bridge arm of the C-phase bridge arm of the three-phase bridge arm circuit in parallel, and the C-phase voltage acquisition end is connected with a voltage division signal output end of the fifth voltage division circuit or a voltage division signal output end of the sixth voltage division circuit.
2. The self-test MOS transistor circuit of claim 1, wherein the first voltage divider circuit comprises a first resistor, the third voltage divider circuit comprises a second resistor, and the fifth voltage divider circuit comprises a third resistor; the A-phase voltage acquisition end is connected with the voltage division signal output end of the second voltage division circuit, the B-phase voltage acquisition end is connected with the voltage division signal output end of the fourth voltage division circuit, and the C-phase voltage acquisition end is connected with the voltage division signal output end of the sixth voltage division circuit.
3. The MOS transistor self-test circuit of claim 2, wherein the second voltage divider circuit comprises a fourth resistor and a fifth resistor, the fourth voltage divider circuit comprises a sixth resistor and a seventh resistor, and the sixth voltage divider circuit comprises an eighth resistor and a ninth resistor;
the fourth resistor and the fifth resistor are connected in series and then connected in parallel with a lower bridge arm of an A-phase bridge arm of the three-phase bridge arm circuit;
the sixth resistor and the seventh resistor are connected in series and then connected in parallel with a lower bridge arm of a B-phase bridge arm of the three-phase bridge arm circuit;
the eighth resistor and the ninth resistor are connected in series and then connected in parallel with a lower bridge arm of a C-phase bridge arm of the three-phase bridge arm circuit;
the connection end of the fourth resistor and the fifth resistor is electrically connected with the A-phase voltage acquisition end;
the connection end of the sixth resistor and the seventh resistor is electrically connected with the B-phase voltage acquisition end;
and the connection end of the eighth resistor and the ninth resistor is electrically connected with the C phase voltage acquisition end.
4. The MOS tube self-checking circuit according to claim 1, further comprising a power supply, a bus resistor and a bus current collection module, wherein the positive electrode of the power supply is connected with the upper bridge arm of the A-phase bridge arm, the upper bridge arm of the B-phase bridge arm and the upper bridge arm of the C-phase bridge arm of the three-phase bridge arm circuit, the negative electrode of the power supply is connected with the lower bridge arm of the A-phase bridge arm, the lower bridge arm of the B-phase bridge arm and the lower bridge arm of the C-phase bridge arm of the three-phase bridge arm circuit, and the bus resistor is connected in series with the negative circuit of the power supply of the three-phase bridge arm circuit; the bus current acquisition module is connected with the bus resistor in parallel and used for detecting the current value of the bus resistor.
5. The MOS tube self-checking circuit of claim 4, further comprising a controller, wherein the controller further comprises a bus current collecting end, the bus current collecting module further comprises a signal output end, and the bus current collecting end of the controller is electrically connected with the signal output end of the bus current collecting module and used for collecting the current signal of the bus resistor.
6. The MOS tube self-checking circuit according to claim 1, wherein the three-phase bridge arm circuit comprises a first MOS tube, a second MOS tube, a third MOS tube, a fourth MOS tube, a fifth MOS tube, a sixth MOS tube and a power supply;
a first pole of the first MOS tube is connected with the positive pole of the power supply, a second pole of the first MOS tube is connected with a first pole of the second MOS tube, and a second pole of the second MOS tube is connected with the negative pole of the power supply;
the first pole of the third MOS tube is connected with the positive pole of the power supply, the second pole of the third MOS tube is connected with the first pole of the fourth MOS tube, and the second pole of the fourth MOS tube is connected with the negative pole of the power supply;
the first pole of the fifth MOS tube is connected with the positive pole of the power supply, the second pole of the fifth MOS tube is connected with the first pole of the sixth MOS tube, and the second pole of the sixth MOS tube is connected with the negative pole of the power supply.
7. The MOS tube self-test circuit of claim 6, wherein the three-phase bridge arm circuit further comprises a first diode, a second diode, a third diode, a fourth diode, a fifth diode and a sixth diode;
the first diode is connected with the first MOS tube in parallel, the cathode of the first diode is electrically connected with the first pole of the first MOS tube, and the anode of the first diode is electrically connected with the second pole of the first MOS tube;
the second diode is connected with the second MOS tube in parallel, the cathode of the second diode is electrically connected with the first pole of the second MOS tube, and the anode of the second diode is electrically connected with the second pole of the second MOS tube;
the third diode is connected with the third MOS tube in parallel, the cathode of the third diode is electrically connected with the first pole of the third MOS tube, and the anode of the third diode is electrically connected with the second pole of the third MOS tube;
the fourth diode is connected with the fourth MOS tube in parallel, the cathode of the fourth diode is electrically connected with the first pole of the fourth MOS tube, and the anode of the fourth diode is electrically connected with the second pole of the fourth MOS tube;
the fifth diode is connected with the fifth MOS tube in parallel, the cathode of the fifth diode is electrically connected with the first pole of the fifth MOS tube, and the anode of the fifth diode is electrically connected with the second pole of the fifth MOS tube;
the sixth diode is connected in parallel with the sixth MOS transistor, a cathode of the sixth diode is electrically connected to a first pole of the sixth MOS transistor, and an anode of the sixth diode is electrically connected to a second pole of the sixth MOS transistor.
8. An electric vehicle comprising the MOS transistor self-test circuit according to any one of claims 1 to 7.
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| CN201922013744.8U CN211577329U (en) | 2019-11-20 | 2019-11-20 | MOS manages self-checking circuit and electric motor car |
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| CN201922013744.8U CN211577329U (en) | 2019-11-20 | 2019-11-20 | MOS manages self-checking circuit and electric motor car |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116582019A (en) * | 2023-06-07 | 2023-08-11 | 上海功成半导体科技有限公司 | Variable frequency control circuit and semiconductor device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116582019A (en) * | 2023-06-07 | 2023-08-11 | 上海功成半导体科技有限公司 | Variable frequency control circuit and semiconductor device |
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