CN211570769U

CN211570769U - Film coating equipment

Info

Publication number: CN211570769U
Application number: CN201922151677.6U
Authority: CN
Inventors: 宗坚; 冯国满
Original assignee: Jiangsu Favored Nanotechnology Co Ltd
Current assignee: Jiangsu Favored Nanotechnology Co Ltd
Priority date: 2019-12-04
Filing date: 2019-12-04
Publication date: 2020-09-25
Anticipated expiration: 2029-12-04

Abstract

The utility model provides a coating equipment, wherein bearing structure is applied to a coating equipment, supplies to support at least one coating work piece of treating, wherein coating equipment includes a reaction chamber and has a reaction chamber, bearing structure is held in this reaction chamber and is supported in this reaction chamber, wherein bearing structure is connected in a discharge device of this coating equipment with can leading as the electrode discharges.

Description

Film coating equipment

Technical Field

The utility model relates to the surface treatment field especially involves filming equipment.

Background

The film layer can protect the surface of the material so as to endow the material with good physical and chemical properties.

The Plasma Enhanced Chemical Vapor Deposition (PECVD) coating technology has the characteristics of low deposition temperature, high deposition rate and the like, and is a common technical means for preparing a film layer. The plasma enhanced chemical vapor deposition coating technology utilizes high-energy electrons in plasma to activate gas molecules, promotes free radical formation and ionization, generates a large amount of active particles such as high-energy particles with strong chemical activity, atoms or molecular ions and electrons, and the active particles react chemically to generate reaction products. Since the energetic electrons provide energy to the source material particles, chemical vapor deposition can occur without the need to provide much external thermal energy, thereby reducing the reaction temperature, which makes possible chemical reactions that are otherwise difficult or very slow.

In the coating process, a workpiece to be coated needs to be placed in a reaction chamber, and then reaction gas is introduced. And depositing the reaction gas on the surface of the workpiece to be coated to form a film layer under the action of the plasma. In this process, the reaction chamber needs to provide an electric field environment to generate plasma. In a conventional coating apparatus, electrodes are disposed at a position of a housing of a reaction chamber, one electrode plate of each pair of electrodes is connected to a primary stage of a power supply, and the other electrode plate is grounded or connected to the other stage of the power supply. When the power is turned on, an electric field is generated between a pair of electrodes and the gas raw material located therein is activated to form plasma. The workpiece to be coated is held in the reaction chamber and can be brought into contact with a reaction gas to be coated in a plasma atmosphere.

The quasi-static state of the discharge plasma between the parallel electrode plates is in nonlinear distribution, a large voltage drop exists in an ion sheath passing through the loading electrode, the voltage drop of the plasma is small, ions in the plasma bombard the surface of the cathode in an accelerating mode through the sheath, secondary electrons are released from the surface of the cathode and accelerated to enter the plasma, and the high-energy electrons collide with gas molecules and are ionized. Meanwhile, ions and neutral groups between neutral groups collide and a series of complex chemical reactions occur, and the chemical processes determine the chemical composition of plasma (Chengyu, deposition mechanism of RF-PECVD for preparing diamond-like carbon film, vacuum electron technology, 1997,4: 17-22).

Therefore, the arrangement position of the electrodes and the relative position of the electrodes and the workpiece to be coated affect the final coating effect. In general, in order to perform batch coating on a plurality of workpieces to be coated, a plurality of pairs of electrodes are arranged in a reaction chamber and a certain distance needs to be maintained between the plurality of pairs of electrodes or between each pair of electrodes and the workpiece to be coated. Undoubtedly, these electrodes occupy more accommodation space of the reaction chamber.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a coating equipment, wherein bearing structure can use as the electrode, also can play the supporting role to treating the coating film work piece.

Another object of the present invention is to provide a coating apparatus, wherein the supporting structure can be arranged in multiple layers in the height direction to accommodate more workpieces to be coated.

Another object of the present invention is to provide a coating apparatus, wherein the supporting structure can support the workpiece to be coated at a fixed position, so as to be beneficial to keep the workpiece to be coated at a stable position.

Another object of the present invention is to provide a coating apparatus, wherein the supporting structure can support and guide the raw material gas.

According to an aspect of the utility model provides a coating equipment supplies at least a coating film work piece coating film of treating, coating equipment includes:

a reaction chamber, wherein the reaction chamber is provided with a reaction chamber;

a discharge device, wherein the discharge device is used for providing an electric field for the reaction chamber; and

a support, wherein the support is held in the reaction chamber, the support comprising at least one support structure, the support structure being received in the reaction chamber and supported in the reaction chamber, the support structure being conductively connected to the discharge device for discharge as an electrode, the coated workpiece being supported in the support and coated in the reaction chamber by chemical vapour deposition.

According to an embodiment of the present invention, the support structure comprises a plate body, wherein the plate body is accommodated in the reaction chamber.

According to an embodiment of the invention, the support structure comprises a plurality of support members and a plurality of air vents, wherein a plurality of the support members are mutually staggered and form a plurality of the air vents.

According to an embodiment of the present invention, the support structure comprises a plate body, a plurality of supporting members and a plurality of air vents, wherein a plurality of the supporting members and the plate body are formed alternately.

According to an embodiment of the present invention, the plate body has a plurality of air vents, wherein the air vents are formed by punching or the plate body is formed in the process of integral molding.

According to an embodiment of the present invention, the plate body forms at least one gas transmission channel, wherein the gas transmission channel communicates with the vent to transmit gas to the vent.

According to an embodiment of the present invention, the support structure comprises a first support part and a second support part, wherein the first support part is insulatively supported by the second support part, and the vent is formed in the second support part.

According to the utility model discloses an embodiment, interval between the blow vent is 60 ~ 90 mm.

According to an embodiment of the present invention, the size range of the vent is 0.5mm to 3 mm.

Drawings

Fig. 1 is a schematic view of a stand according to a preferred embodiment of the present invention.

Fig. 2A is a schematic view of a plate structure of the bracket according to the above preferred embodiment of the present invention.

Fig. 2B is another schematic view of the plate structure of the bracket according to the above preferred embodiment of the present invention.

Fig. 3 is a schematic view of another embodiment of the plate structure of the bracket according to the above preferred embodiment of the present invention.

Fig. 4 is a schematic view of another embodiment of the plate structure of the bracket according to the above preferred embodiment of the present invention.

Fig. 5 is a schematic view of another embodiment of the stand according to the above preferred embodiment of the present invention.

Fig. 6A is a schematic view of another embodiment of the plate structure of the bracket according to the above preferred embodiment of the present invention.

Fig. 6B is a schematic view of another embodiment of the plate structure of the bracket according to the above preferred embodiment of the present invention.

Fig. 7 is a schematic view of a coating apparatus according to a preferred embodiment of the present invention.

Fig. 8 is a schematic view of another embodiment of the coating apparatus according to the above preferred embodiment of the present invention.

Detailed Description

The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The basic principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents and other technical solutions without departing from the spirit and scope of the invention.

It will be understood by those skilled in the art that in the present disclosure, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in a generic and descriptive sense only and not for purposes of limitation, as the terms are used in the description to indicate that the referenced device or element must have the specified orientation, be constructed and operated in the specified orientation, and not for the purpose of limitation.

It is understood that the terms "a" and "an" should be interpreted as meaning that a number of one element or element is one in one embodiment, while a number of other elements is one in another embodiment, and the terms "a" and "an" should not be interpreted as limiting the number.

The utility model provides a supporting structure 11 and a support 10, wherein support 10 can be placed and use in a coating equipment 1, coating equipment 1 can be used to prepare various types of rete, DLC rete for example.

The coating equipment 1 can form a film layer on the surface of a workpiece to be coated by chemical deposition by utilizing a plasma enhanced chemical deposition (PECVD) technology. Specifically, the workpiece to be coated is placed in a reaction chamber 20 of the coating apparatus 1 for plasma enhanced chemical vapor deposition to form the film on the surface of the workpiece to be coated.

Plasma Enhanced Chemical Vapor Deposition (PECVD) processes have many advantages over other existing deposition processes: (1) the dry type film deposition does not need to use an organic solvent; (2) the plasma acts on the surface of the substrate in an etching way, so that the deposited film has good adhesion with the substrate; (3) the coating can be uniformly deposited on the surface of the irregular matrix, and the gas phase permeability is extremely strong; (4) the coating has good designability, and compared with the micron-scale control precision of a liquid phase method, the chemical vapor phase method can control the thickness of the coating at a nanoscale scale; (5) the coating structure is easy to design, the chemical vapor method uses plasma for activation, a specific initiator is not required to be designed for initiating the composite coatings of different materials, and various raw materials can be compounded together by regulating and controlling input energy; (6) the compactness is good, the chemical vapor deposition method usually activates a plurality of active sites in the plasma initiation process, and is similar to the situation that a plurality of functional groups are arranged on one molecule in the solution reaction, and a cross-linking structure is formed among molecular chains through the plurality of functional groups; (7) as a coating treatment technical means, the coating treatment method has excellent universality, and the selection range of coating objects and raw materials used for coating is wide.

Referring to fig. 1 to 2B and fig. 7, in particular, the support 10 includes a plurality of layers of the support structure 11, wherein the plurality of layers of the support structure 11 are held in a reaction chamber 200 of a reaction chamber 20 of the coating apparatus 1.

The workpiece to be coated can be placed in one or more layers in the multi-layer support structure 11 of the support 10.

The support 10 includes at least one connecting member 12, wherein the connecting member 12 is disposed around the support structures 11 for supporting each of the support structures 11 at a predetermined height. The adjacent support structures 11 are kept at a preset distance, so that reactants enter between the adjacent support structures 11 to be deposited on the surface of the workpiece to be coated, which is supported on the support structures 11.

In the present embodiment, the support structure 11 is rectangular in shape. It will be appreciated by those skilled in the art that the shape of the support structure 11 may be, but is not limited to, triangular, circular, or other shapes. Preferably, the shape of the cross section formed by the inner wall of the reaction chamber 20 of the shape of the support structure 11 is similar, on the one hand to facilitate the utilization of the space of the reaction chamber 200, and on the other hand to facilitate the equal distance from the periphery of the support structure 11 to the inner wall of the reaction chamber 20, so as to facilitate the uniformity of gas diffusion.

In this embodiment, the number of the connecting members 12 is four, and the connecting members are respectively located at four corners of the supporting structure 11 to support the supporting structure 11. Further, the connecting member 12 may be implemented as a pillar capable of standing on the reaction chamber 20.

The supporting structure 11 can support a plurality of workpieces to be coated, and both front and back sides of the workpieces to be coated placed on the supporting structure 11 can be coated in the coating apparatus 1.

Specifically, the support structure 11 has a plurality of vents 110 and includes a plate main body 111, wherein the plate main body 111 has a plate top surface and a plate bottom surface, wherein the plate top surface and the plate bottom surface are oppositely disposed, the workpiece to be plated can be placed on the plate top surface, and the vents 110 pass through the plate top surface and the plate bottom surface from top to bottom to penetrate the plate main body 111.

When the support structure 11 is supported by the connection member 12 to be held in the reaction chamber 200 of the reaction chamber 20, the raw material gas may be diffused throughout the support 10 through the vent 110 of the support structure 11.

The vent 110 may be formed in the plate body 111 by punching, or the plate body 111 may be formed with the vent 110 in an integral molding process. The position and shape of the vents 110 may be arranged as desired. The vent 110 can guide the flow of the raw material gas, and thus may affect the final plating effect. The coating effect can be controlled by controlling the number and size of the vents 110.

It is understood that the source gas may be a reactive gas selected based on the film requirements, for example, when the workpiece surface is required to be coated with a DLC film, the reactive gas may be C_xH_yWherein x is an integer of 1 to 10 and y is an integer of 1 to 20. The reaction gas may be a single gas or a mixed gas. Alternatively, the reaction gas may be methane, ethane, propane, butane, ethylene, acetylene, propylene, or propyne, which is gaseous at normal pressure, or may be vapor formed by evaporation under reduced pressure or heating. That is, the raw material which is liquid at the normal temperature may be supplied to the reaction chamber 200 in a gaseous state through a gas supply part 30.

The source gas may be a plasma source gas, and may be, but is not limited to, an inert gas such as, but not limited to, helium or argon, nitrogen, or a fluorocarbon such as, but not limited to, carbon tetrafluoride. The plasma source gas may be a single gas, or may be a mixture of two or more gases.

The source gas may be an assist gas, and the assist gas may cooperate with the reactive gas to form a film layer, so as to impart desired properties to the film layer, such as strength, flexibility, etc. The assist gas may be a non-hydrocarbon gas such as nitrogen, hydrogen, fluorocarbon gas, and the like. The auxiliary gas may be supplied to the reaction chamber 20 simultaneously with the reaction gas, or may be introduced in a sequential order according to the requirement. The addition of the auxiliary gas can adjust the proportion of each element in the film layer and the proportion of carbon-hydrogen bonds, carbon-nitrogen bonds and nitrogen-hydrogen bonds, thereby changing the property of the film layer.

At least a portion of the source gas may be diffused from the vent 110 location of the support structure 11. The vents 110 are positioned and sized in a particular arrangement to facilitate the diffusion of the source gases and the resulting coating effect.

In the present embodiment, the diameter of the vents 110 ranges from about 0.5mm to about 3mm, and the distance between adjacent vents 110 may be 60mm to about 90 mm.

The length and width dimensions of the support structures 11 may range from 500mm to 600mm, and the spacing between adjacent support structures 11 may range from 10mm to 200 mm.

Further, the coating apparatus 1 includes a discharge device 40, wherein the discharge device 40 includes a pulse power source 41 and a radio frequency power source 42, wherein the pulse power source 41 is used for providing a pulse electric field, the radio frequency power source 42 is used for providing a radio frequency electric field, and the radio frequency power source 42 can be loaded on the electrode plate for generating the radio frequency electric field. Or the radio frequency power supply 42 is arranged outside the cavity to be used as an inductively coupled plasma power supply so as to provide an alternating magnetic field. The pulse power supply 41 and the rf power supply 42 may be used individually or in combination.

It should be noted that, in the PECVD process, since the energy of the rf power source 42 itself is low, the effect of generating plasma by discharging the rf power source 42 alone in industrial mass production is not ideal, and as the reaction chamber 20 of the coating apparatus 1 is enlarged and the number of the works to be coated is increased, the adverse effects of non-uniform coating occur.

Pulsed discharge is also a common way in Plasma Enhanced Chemical Vapor Deposition (PECVD) processes. The pulse discharge energy is higher, and as the reaction cavity 20 of the coating device 1 is enlarged and the number of the workpieces to be coated is increased, the voltage requirement on the pulse power supply 41 is higher to enhance the processing capacity. However, the pulsed power supply 41 with a high voltage may generate stronger bombardment on the surface of the workpiece to be coated, so that the surface of the workpiece to be coated may be damaged.

In this embodiment, the pulse power source 41 and the rf power source 42 can be used simultaneously, so as to increase the energy of the plasma reaching the surface of the workpiece to be coated to obtain a dense film layer on the basis of obtaining a high ionization rate plasma.

Further, the holder 10 is provided with at least one insulating member 13, wherein the insulating member 13 is made of an insulating material, such as teflon. The insulating member 13 is provided at the bottom end of the connecting member 12. When the entire holder 10 is accommodated in the reaction chamber 20, the insulating member 13 may be supported by the reaction chamber 20, so that the holder 10 and the reaction chamber 20 cannot be conducted.

The entire support 10 is conductively connected to the discharge device 40 as a cathode, and the reaction chamber 20 may be grounded or conductively connected to the discharge device 40 as an anode.

For example, the holder 10 may be conductively connected to the pulse power source 41 of the discharge device 40 to serve as a cathode of the pulse power source 41, at least a portion of the reaction chamber 20 may be conductively connected to the pulse power source 41 of the discharge device 40 to serve as an anode of the pulse power source 41, and the reaction chamber 20 may be grounded.

The rf power source 42 may be independent of the stent 10 or at least one of the support structures 11 of the stent 10 may be conductively coupled to the rf power source 42.

The workpiece to be coated is placed on the support structure 11 serving as a cathode, so that positive ions in the plasma can be accelerated to move towards the support structure 11 serving as the cathode under the action of an electric field, and a compact film layer is formed on the surface of the workpiece to be coated.

In this process, the raw material gas can be diffused through the vent 110 of the support structure 11 at a predetermined position.

Illustratively, the source gas diffuses through the vent 110 of the support structure 11 at the second level, and thus enters between the support structure 11 at the second level and the support structure 11 at the third level. While the source gas between the support structure 11 of the second layer and the support structure 11 of the third layer may be diffused through the vent 110 of the support structure 11 of the third layer or through the vent 110 of the support structure 11 of the second layer.

It is noted that the workpiece to be coated has a front side and a back side, wherein the workpiece to be coated is supported by the support structure 11 with the front side facing upward. A source gas may be deposited to the back side of the workpiece to be coated through a gap between the workpiece to be coated and the support structure 11. Since at least a portion of the back surface of the workpiece to be coated is exposed to the vent 110 of the support structure 11, at least a portion of the raw material gas can pass through the vent 110 from top to bottom and then be deposited on the back surface of the workpiece to be coated, thereby enabling simultaneous coating of the front surface and the back surface of the workpiece to be coated.

Further, it is noted that, in the present embodiment, the support structure 11 is held at various height positions of the reaction chamber 200 of the reaction chamber 20 by the connection members 12.

In other embodiments of the present invention, the supporting structure 11 can be directly mounted to the reaction chamber 20, for example, referring to fig. 8, the supporting structure 11 can be detachably mounted to the reaction chamber 20, for example, in a clamping manner, and the reaction chamber 20 can be provided with a groove. The support structure 11 may be horizontally mounted to the reaction chamber 20, or vertically mounted to the reaction chamber 20.

Further, it should be noted that in the present embodiment, each of the supporting structures 11 is made of an electrically conductive material, such as a stainless steel material, and at least one of the connecting members 12 may also be made of an electrically conductive material. The electrically conductive support structures 11 are respectively conductively connected to the electrically conductive connecting elements 12, so that each support structure 11 can be conductively connected to the outside by means of the conductive connection of the connecting element 12 to the outside.

In this way, the cumbersome steps of wiring each of the support structures 11 to connect to the outside are eliminated, and the discharge control of the cradle 10 is facilitated.

Referring to fig. 3, another embodiment of the support structure 11 according to the present invention is illustrated. In the present embodiment, the support structure 11 includes the plate body 111 and a plurality of supports 112, wherein the plate body 111 and the supports 112 are staggered to form the vents 110.

Specifically, the plate body 111 forms a plurality of receiving spaces 1110, wherein the receiving spaces 1110 may be formed by drilling or the plate body 111 forms the receiving spaces 1110 in an integral molding process.

The support member 112 may be located in the receiving space 1110 and connected to the plate body 111. In detail, the supporting members 112 cross the accommodating space 1110 in a staggered manner, so that the workpiece to be coated can be supported by the supporting members 112 and held in the accommodating space 1110.

Each of the accommodating spaces 1110 can accommodate at least one workpiece to be coated. By the plate body 111, the adjacent workpieces to be coated can be separated to keep each workpiece to be coated in a relatively independent space.

The raw material gas may pass through the accommodating space 1110 from top to bottom or from bottom to top, then pass through the vent 110 to diffuse between the layers, and be supported by the support 112 so that the workpiece to be coated, which is held in the accommodating space 1110, can be coated.

Of course, it is understood that the workpiece to be coated may be placed at the plate body 111 position, and the support 112 position may serve only as a passage for the raw material gas.

The support 112 may be made of a conductive material, and when the workpiece to be coated is placed on the support 112, the support 112 may be conductively connected to the discharge device 40 to serve as a cathode. The plate main body 111 may be made of a conductive material, or may be insulating. When the plate body 111 is made of an insulating material, the electric field around the workpiece to be coated is formed depending on the support 112. The plate main body 111 may function as a shield for the adjacent receiving space 1110.

With reference to fig. 4, another embodiment of the support structure 11 according to the invention is illustrated.

In this embodiment, the support structure 11 includes a plurality of the supports 112, wherein the supports 112 are staggered to form the vents 110.

The workpiece to be coated is supported by the support 112. In this embodiment, the support structure 11 is a net structure.

For the workpiece to be coated, the supporting structure 11 contacting the back surface of the workpiece to be coated is reduced to facilitate the exposure of the back surface of the workpiece to be coated to raw material gas, thereby facilitating the coating of the back surface of the workpiece to be coated.

The weight of the holder 10 can be reduced for the entire holder 10, contributing to weight reduction of the entire plating apparatus 1. It is noted that the lighter weight of the rack 10 is clearly more advantageous for this operation when the entire rack 10 is removable from the reaction chamber 200 of the reaction chamber 20.

Further, in other embodiments of the present invention, the supporting structures 11 of the above three different types can be alternately arranged according to requirements, for example, the plate structure and the expanded metal structure are alternately arranged, and the expanded metal structure are alternately arranged.

Referring to fig. 5, and also to fig. 7, another embodiment of the bracket 10 according to the present invention is illustrated.

In this embodiment, the stand 10 comprises two different types of the support structure 11. Specifically, at least one of the support structures 11 includes the plate main body 111, and at least one of the support structures 11 includes the plate main body 111 and a plurality of the supports 112. That is, at least one of the plurality of support structures 11 is implemented as a plate structure, and at least one of the plurality of support structures 11 is implemented as a lath structure.

The support structures 11, which are embodied as plate structures and as expanded metal structures, are arranged alternately. For example, the support structures 11 of the first layer may be implemented as plate structures, the support structures 11 of the second layer may be implemented as plate mesh structures, and the support structures 11 of the third layer may be implemented as plate structures.

The plating apparatus 1 further includes a gas supply section 30, wherein the gas supply section 30 can be used to supply a raw material gas. The support structure 11 may become at least part of the gas supply 30.

Specifically, at least one of the support structures 11 has at least one gas delivery channel 1100, wherein the gas delivery channel 1100 is in communication with the vent 110. The vents 110 may penetrate the plate body 111 so that gas from the gas transmission channel 1100 may diffuse toward the upper and lower sides of the support structure 11, respectively. The vent 110 may also be formed at one side of the plate body 111 so that the gas from the gas transmission channel 1100 may be diffused toward one side of the support structure 11.

In this embodiment, the vent 110 is disposed toward the support structure 11 of the next level.

The support structure 11, which is provided as a mesh structure, is conductively connected to the pulse power supply 41 of the discharge device 40 as a cathode of the pulse power supply 41. The workpiece to be coated can be placed on the support structure 11, which is embodied as a expanded metal structure.

The support structure 11, which is provided as a plate structure, may be conductively connected to the pulse power source 41 of the discharge device 40 to serve as an anode of the pulse power source 41. In other embodiments of the present invention, the support structure 11 configured as a plate structure may be conductively connected to the rf power source 42 of the discharge device 40 to serve as an anode of the rf power source 42. In other embodiments of the present invention, the support structure 11, which is configured as a plate structure, may be directly grounded.

When the workpiece to be coated is placed on the support structure 11 implemented as a plate mesh structure, the support structure 11 implemented as a plate structure is positioned above the workpiece to be coated and a source gas may be diffused from above the workpiece to be coated through the vent 110 positioned above the workpiece to be coated. By way of example, the gas from the support structure 11 of the first layer diffuses between the support structure 11 of the first layer and the support structure 11 of the second layer, and since the support structure 11 of the second layer is used as a negative electrode, positive ions in the plasma generated under the action of the electric field can be accelerated towards the support structure 11 of the second layer and deposited on the front side of the workpiece to be coated, supported on the support structure 11 of the second layer.

It should be noted that, since the workpiece to be coated is supported by the support structure 11 implemented as a mesh structure, raw material gas or reaction gas can pass through the vents 110 formed by the staggered support members 112 of the support structure 11, and the coated workpiece is supported by the support members 112, so that gas can be distributed on the peripheral side of the workpiece to be coated, which is beneficial for coating the back side of the workpiece to be coated.

Further, in the present embodiment, the number of the connecting members 12 is four, the supporting structures 11 are implemented as rectangular structures and the four connecting members 12 are respectively arranged at four corners of each of the supporting structures 11.

Preferably, each of the support structures 11 is arranged identically along the height direction of the connecting members 12, for example, the four corners of the support structure 11 of the first layer correspond to the four corners of the support structure 11 of the second layer. The projections of the support structures 11 of each layer in the height direction are located at the same position.

Further, each of the support structures 11 as a cathode is respectively conductively connected to one of the connectors 12, and each of the support structures 11 as an anode is respectively conductively connected to the other of the connectors 12. In this way, each of the support structures 11 as a cathode can be conducted to the outside by one of the connectors 12 and the pulse power source 41. Each of the structures as an anode can be conducted to the outside by the pulse power source 41 through the other of the connectors 12.

In other embodiments of the present invention, except for the support structure 11 as the cathode, the remaining support structure 11 can be connected to the outside rf power source 42 through another link or directly grounded.

In further embodiments of the present invention, the support structure 11 implemented as a lath structure and the support structure 11 implemented as a net structure may be alternately arranged.

In further embodiments of the present invention, the support structure 11 implemented as a plate structure and the support structure 11 implemented as a mesh structure may be arranged alternately.

Referring to fig. 6A and 6B, and to fig. 1 and 7, another embodiment of the stent 10 according to the present invention is illustrated. In this embodiment, the support structure 11 includes a first support portion 113 and a second support portion 114, wherein the first support portion 113 is supported by the second support portion 114, the first support portion 113 is used for supporting the workpiece to be coated, and the second support portion 114 is used for gas distribution.

Specifically, the first support part 113 includes a plurality of the supporters 112, and the supporters 112 alternately form the vents 110.

The second support portion 114 includes the plate body 111 and has a plurality of the vents 110, wherein the vents 110 are formed at the plate body 111. The plate body 111 is formed with at least one gas transmission passage 1100, wherein the gas vent 110 is communicated with the gas transmission passage 1100.

The vent 110 is formed at the second support portion 114 and faces the support structure 11 of the next layer. When the workpiece to be coated is placed on the first support part 113 of the support structure 11, the second support part 114 of another layer of the support structure 11 is positioned above the workpiece to be coated.

When the gas leaves the second support 114 from the gas vent 110, at least a part of the gas can be ionized to form plasma under the action of the rf electric field and/or the pulsed electric field, and then positive ions in the plasma can be accelerated toward the first support 113 located below, so as to be deposited on the surface of the workpiece to be coated supported on the first support 113 of the support structure 11.

Further, the second support 114 may be conductively connected to the rf power source 42, so that the gas can be ionized at the second support 114 and then accelerated toward the workpiece to be coated by the first support 113 as a cathode.

In this way, in addition to the support structures 11 of the first layer, the support structures 11 of each layer can be placed with the workpieces to be coated, so as to facilitate an increased space utilization of the support 10.

Further, the first supporting portion 113 of each of the supporting structures 11 may be conductively connected to one of the connecting members 12 so as to be conveniently conducted with the outside, and the second supporting portion 114 of each of the supporting structures 11 may be conductively connected to another one of the connecting members 12 so as to be conveniently conducted with the outside. Meanwhile, the first supporting portion 113 and the second supporting portion 114 of each supporting structure 11 are insulated from each other.

Further, referring to fig. 7, the coating apparatus 1 further comprises an air extractor 50, a feeding device 60 and a control device 70, wherein the air extractor 50 and the feeding device 60 are respectively communicably connected to the reaction chamber 20, and the air extractor 50, the feeding device 60 and the discharging device 40 are respectively controllably connected to the control device 70. The gas pumping device 50 is used for pumping gas to change the degree of vacuum in the reaction chamber 20. The control device 70 is used for controlling parameters such as the feeding flow rate, the proportion, the pressure, the discharge magnitude, the discharge frequency and the like in the reaction chamber 20, so that the whole coating process can be controlled.

According to another aspect of the present invention, the present invention provides a method of operating the support 10, comprising the steps of:

at least one layer of the support structure 11 of the support 10 is connected to the pulse power source 41 to discharge around at least one workpiece to be coated to form the pulse electric field, wherein the support structure 11 serves as a cathode of the pulse electric field.

According to some embodiments of the present invention, in the above method, the supporting structure 11 and the pulse power source 41 located outside the reaction chamber 20 are turned on by at least one of the pillars supported by the supporting structure 11, wherein the bracket 10 is located in the reaction chamber 20.

According to some embodiments of the present invention, the method of operating the support 10 further comprises the steps of:

at least one layer of the support structure 11 of the stent 10 conducts the pulse power source 41 to serve as an anode of the pulse power source 41, so as to form the pulse electric field between the anode serving as the pulse power source 41 and a cathode serving as the pulse power source 41.

According to some embodiments of the present invention, the working method of the electrode holder 10 further comprises the steps of:

at least one layer of the support structure 11 of the stent 10 conducts the radio frequency power source 42 to serve as an anode of the radio frequency power source 42, so that the radio frequency electric field and the pulse electric field are formed between the anode serving as the radio frequency power source 42 and the cathode serving as the pulse power source 41.

releasing gas by at least one layer of said support structure 11; and

the gas is ionized so as to be accelerated toward the coating tool under the action of the cathode of the pulse power supply 41.

It will be understood by those skilled in the art that the embodiments of the present invention as described above and shown in the drawings are given by way of example only and are not limiting of the present invention. The objects of the present invention have been fully and effectively accomplished. The functional and structural principles of the present invention have been shown and described in the embodiments without departing from the principles, embodiments of the present invention may have any deformation or modification.

Claims

1. A coating equipment for coating at least one workpiece to be coated is characterized by comprising:

2. The plating device according to claim 1, wherein the support structure comprises a plate body, wherein the plate body is accommodated in the reaction chamber.

3. The plating device according to claim 1, wherein the support structure comprises a plurality of supports and has a plurality of vents, wherein the plurality of supports are staggered with respect to each other and form the plurality of vents.

4. The plating apparatus according to claim 1, wherein the support structure comprises a plate body, a plurality of supports, and a plurality of vents, wherein the plurality of supports and the plate body are staggered to form the vents.

5. The plating device according to claim 2, wherein the plate body has a plurality of vent holes, wherein the vent holes are formed by punching or are formed in the plate body during integral molding.

6. The plating apparatus according to claim 4 or 5, wherein the plate body forms at least one gas transmission passage, wherein the gas transmission passage communicates with the vent to transmit gas to the vent.

7. The plating apparatus according to any one of claims 3 to 5, wherein the support structure comprises a first support portion and a second support portion, wherein the first support portion is insulatively supported to the second support portion, and the vent is formed in the second support portion.

8. The plating apparatus according to any one of claims 3 to 5, wherein the distance between the vents is 60 to 90 mm.

9. The plating device according to any one of claims 3 to 5, wherein the size of the vent is in the range of 0.5mm to 3 mm.

10. The plating device according to any one of claims 1 to 5, wherein the holder further comprises at least one connector, wherein the connector supports the support structure in the reaction chamber of the plating device, the support structure being held in the connector at intervals, layer by layer.