CN211497466U - Composite adhesive material - Google Patents

Composite adhesive material Download PDF

Info

Publication number
CN211497466U
CN211497466U CN201922090627.1U CN201922090627U CN211497466U CN 211497466 U CN211497466 U CN 211497466U CN 201922090627 U CN201922090627 U CN 201922090627U CN 211497466 U CN211497466 U CN 211497466U
Authority
CN
China
Prior art keywords
composite
curvature
layer
semiconductor structure
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201922090627.1U
Other languages
Chinese (zh)
Inventor
陈俊发
黄启华
王耀萱
林钦楷
李贞儒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ALLIANCE MATERIAL CO LTD
Original Assignee
ALLIANCE MATERIAL CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW108139158A external-priority patent/TWI718734B/en
Application filed by ALLIANCE MATERIAL CO LTD filed Critical ALLIANCE MATERIAL CO LTD
Application granted granted Critical
Publication of CN211497466U publication Critical patent/CN211497466U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Laminated Bodies (AREA)
  • Adhesive Tapes (AREA)

Abstract

The utility model provides a composite material, it is suitable for the laminating in semiconductor structure. The composite adhesive material comprises an adhesive layer and a heat shrinkage layer. The adhesive layer has an adhesive surface. The composite adhesive material is suitable for being adhered to the semiconductor structure in a mode that the adhering surface faces the semiconductor structure. The heat shrinkable layer is disposed on a surface of the bonding layer opposite to the bonding surface. The bonding surface of the composite bonding material has a first curvature before heating. The bonding surface of the composite bonding material has a second curvature after heating. The first curvature is greater than the second curvature. The utility model discloses a compound material of pasting's applicable in chip technology, chip packaging technology or other similar semiconductor technology, and can reduce the warpage of its semiconductor construction of laminating after the heating.

Description

Composite adhesive material
Technical Field
The utility model relates to a paste the material, especially relate to a compound material of pasting.
Background
In recent years, due to the development of Integrated Circuits (ICs) towards high performance, high density, low power consumption and small size, the requirements of conventional Wire Bonding (Wire Bonding) packages and Flip Chip (Flip Chip) packages have not been met, and Fan-out Chip Level packages (FOWLPs) have been developed and gradually applied to high-end products. The fan-out type packaging mainly cuts the chips, increases the chip spacing, recombines the chips into another chip, then carries out mould pressing and replaces the original packaging with a substrate type by a Re-Distribution Layer (RDL) process, accommodates more pins under a smaller packaging area, integrates a plurality of functional chips into a whole, can compress the module volume and improves the whole functionality and flexibility of a chip system.
The possible reasons for the warpage of the chip are mainly as follows: (1) the material has the phenomenon of thermal expansion and cold contraction; (2) residual stress between package substrate interfaces; and/or (3) differences in Coefficient of Thermal Expansion (CTE) between passivation (passivation), die (die), and metal materials.
Although such warpage is usually improved by changing process parameters or adjusting passivation layer and metal structure, a certain degree of warpage cannot be completely eliminated, which still causes chip warpage during the circuit redistribution process, and thus another method and structure capable of pulling the chip warpage back to a flat state are needed.
Accordingly, the present invention provides a composite structure for controlling warpage of a chip and a method for controlling warpage thereof, which can overcome the drawbacks of the conventional techniques, based on the accumulated experience of the industry for many years.
SUMMERY OF THE UTILITY MODEL
The utility model provides a composite material, it is applicable in chip technology, chip packaging technology or other similar semiconductor processes, and can reduce the warpage of the semiconductor structure of its laminating after the heating.
The utility model discloses a compound material of pasting is suitable for laminating in semiconductor structure. The composite adhesive material comprises an adhesive layer and a heat shrinkage layer. The adhesive layer has an adhesive surface. The composite adhesive material is suitable for being adhered to the semiconductor structure in a mode that the adhering surface faces the semiconductor structure. The heat shrinkable layer is disposed on a surface of the bonding layer opposite to the bonding surface. The binding surface of the composite material before heating has a first curvature, the binding surface of the composite material after heating has a second curvature, and the first curvature is larger than the second curvature.
The utility model discloses an in the embodiment of the utility model, the thickness of thermal contraction layer is between 10 microns (micrometer) to 1000 microns
Utility model discloses an in the embodiment of the utility model, compound subsides material still includes the substrate. The base material is positioned between the attaching layer and the heat shrinkable layer.
Utility model discloses based on the aforesaid, compound material of pasting is applicable in chip technology, chip packaging technology or other similar semiconductor processes, and can reduce the warpage of its semiconductor construction of laminating after the heating.
In order to make the aforementioned and other features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and together with the description serve to explain the principles of the invention.
FIG. 1A is a schematic side view of a composite material according to a first embodiment of the present invention before and after heating;
fig. 1B is a schematic side view of a composite material according to a first embodiment of the present invention;
FIG. 2A is a schematic side view of a composite material according to a second embodiment of the present invention before and after heating;
FIG. 2B is a schematic side view of a composite material according to a second embodiment of the present invention;
fig. 3 is a flow chart of a method for manufacturing an electronic product according to an embodiment of the present invention;
FIG. 4A is a top view at the time of actual test according to [ example 7 ];
FIG. 4B is a side view showing a change in the degree of warpage before and after heating in accordance with [ example 7 ];
FIG. 5A is a top view at the time of actual test according to [ example 8 ];
FIG. 5B is a side view showing a change in the degree of warpage before and after heating in accordance with [ example 8 ];
FIG. 6A is a top view at the time of actual test according to [ example 9 ];
FIG. 6B is a side view showing the change in the degree of warpage before and after heating in accordance with [ example 9 ].
The reference numbers illustrate:
100. 100 ', 200': compounding the adhesive material;
110: a heat-shrinkable layer;
120: laminating layers;
120a, 120 a': a binding face;
120 b: a surface;
230: a substrate;
300: a semiconductor structure;
300a, 300 a': a surface;
p: a virtual point.
Detailed Description
Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Fig. 1A is a schematic side view of a composite material according to a first embodiment of the present invention before and after heating. Fig. 1B is a schematic side view of an application of a composite material according to a first embodiment of the present invention.
Referring to fig. 1A and fig. 1B, the composite adhesive material 100 includes a bonding layer 120 and a heat shrinkable layer 110. The conforming layer 120 has a conforming surface 120 a. The heat shrinkable layer 110 is disposed on the surface 120b of the bonding layer 120, and the surface 120b is opposite to the bonding surface 120 a. The bonding surface 120a of the composite material 100 before heating has a first curvature, and the bonding surface 120a 'of the composite material 100' after heating has a second curvature, wherein the first curvature is larger than the second curvature.
For example, referring to fig. 1A, before the composite material 100 is heated, the curvature (curvature) of the attaching surface 120a to a virtual point P on the surface thereof is, for example, about 0. After the composite sticker 100 is heated (e.g., the temperature of the composite sticker 100 is heated from 10 ℃ to 40 ℃ to 100 ℃ to 250 ℃), the curvature of the sticking surface 120 a' to the virtual point P is, for example, a negative value.
Taking fig. 1B as an example, before the composite sticker 100 is heated, the curvature of the bonding surface 120a to a virtual point P on the surface is, for example, a positive value. After the composite sticker 100 is heated (e.g., the temperature of the composite sticker 100 is heated from 10 ℃ to 40 ℃ to 100 ℃ to 250 ℃), the curvature of the sticking surface 120 a' with respect to the virtual point P is, for example, about 0.
That is, the present invention does not limit the thermal contraction layer 110 to be thermally expanded or thermally contracted after heating. As long as the bonding surface 120a of the composite sticker 100 before heating and the bonding surface 120a 'of the composite sticker 100' after heating can be made, the configuration shown in fig. 1A or fig. 1B may be used.
As such, the composite material 100 can be applied to a chip process, a chip package process or other similar semiconductor processes.
Taking fig. 1B as an example, the composite tape 100 can be suitable for being attached to the semiconductor structure 300 with the attaching surface 120a facing the semiconductor structure 300. The semiconductor structure 300 may be a bare chip (bare wafer), a processed wafer (processed wafer) in a chip process, or the like, the semiconductor structure 300 may also be a chip on carrier (carrier wafer), a glass on carrier (carrier glass), or the like, having a die attached thereto, or the semiconductor structure 300 may also be one or more dies encapsulated by a Molding Compound (e.g., Epoxy Molding Compound (EMC)).
In fig. 1B, the semiconductor structure 300 may have a warp (warp). Furthermore, after the composite adhesive material 100 is bonded to the semiconductor structure 300 and the composite adhesive material 100 bonded thereto are heated, the warpage of the semiconductor structure 300 can be reduced by the composite adhesive material 100. For example, the warpage of the semiconductor structure 300 'after heating and having the composite tape 100' attached thereon can be reduced.
In the present embodiment, the thickness of the heat shrinkable layer 110 may be between 0.2 millimeters (mm) and 1 mm, but the present invention is not limited thereto. That is, the composite tape 100 can support or support the semiconductor structure 300 attached thereto by the heat shrinkable layer 110.
Fig. 2A is a schematic side view of a composite material according to a second embodiment of the present invention before and after heating. Fig. 2B is a schematic side view of an application of a composite material according to a second embodiment of the present invention. The composite sticker 200 of the second embodiment is similar to the composite sticker 100 of the first embodiment, and similar components are denoted by the same reference numerals, and have similar functions, materials or forming manners, and descriptions thereof are omitted.
Referring to fig. 2A and 2B, the composite adhesive material 200 includes a lamination layer 120, a substrate 230, and a heat shrinkage layer 110. The substrate 230 is located between the lamination layer 120 and the heat shrinkable layer 110. The bonding surface 120a of the composite bonding material 200 before heating has a first curvature, and the bonding surface 120a of the composite bonding material 200 after heating has a second curvature, wherein the first curvature is larger than the second curvature.
For example, referring to fig. 2A, before the composite material 200 is heated, the curvature (curvature) of the attaching surface 120a to a virtual point P on the attaching surface is, for example, about 0. After the composite tape 200 is heated (e.g., the temperature of the composite tape 200 is heated from 10 ℃ to 40 ℃ to 200 ℃ to 250 ℃), the curvature of the bonding surface 120 a' with respect to the virtual point P is, for example, a negative value.
Taking fig. 2B as an example, before the composite tape 200 is heated, the curvature of the bonding surface 120a with respect to a virtual point P on the bonding surface is, for example, a positive value. After the composite tape 200 is heated (e.g., the temperature of the composite tape 200 is heated from 10 ℃ to 40 ℃ to 200 ℃ to 250 ℃), the curvature of the bonding surface 120 a' with respect to the virtual point P is, for example, about 0.
That is, the present invention does not limit the thermal contraction layer 110 to be thermally expanded or thermally contracted after heating. As long as the bonding surface 120a of the composite tape 200 before heating and the bonding surface 120a 'of the composite tape 200' after heating can be made as shown in fig. 2A or 2B.
In this way, the composite material 200 may be applied to a chip process, a chip package process or other similar semiconductor processes.
Taking fig. 2B as an example, the composite tape 200 can be suitable for being attached to the semiconductor structure 300 with the attaching surface 120a facing the semiconductor structure 300. The semiconductor structure 300 may have a warp (warp). Furthermore, after the composite adhesive material 200 is bonded to the semiconductor structure 300 and the composite adhesive material 200 bonded thereto are heated, the warpage of the semiconductor structure 300 can be reduced by the composite adhesive material 200. For example, the warpage of the semiconductor structure 300 'after heating and having the composite tape 200' attached thereon can be reduced.
In this embodiment, the material of the substrate 230 includes Polyamide (Polyamide; PA), Polyethylene Naphthalate (PEN), Polyethersulfone (PES), Polyetheretherketone (PEEK), Polyimide (PI), glass fiber composite, carbon fiber composite, or a combination thereof, but the invention is not limited thereto. The substrate 230 can be a single layer board, a multi-layer board, a sandwich board, a composite board or a film (e.g., a PTFE film, a PVC film, a PVDF film, an ETFE film, etc.).
In the present embodiment, the thickness of the heat shrinkable layer 110 may be between 0.01 millimeter (mm) and 0.1 mm, but the present invention is not limited thereto.
In the above embodiments, the adhesive layer 120 includes an adhesive composition. The adhesive composition comprises an acrylic (acrylic) curable compound and a functional monomer. The content of the acrylic curable compound is 70 wt% or more and 95 wt% or less and the content of the functional monomer is 20 wt% or more and 30 wt% or less in the total content of the adhesive composition.
The monomer of the acrylic curable compound is a compound having a (meth) acrylate group. For example, the compound having a (meth) acrylate group may include a compound selected from the group consisting of methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (iso) acrylate, n-butyl (meth) acrylate, tert-butyl (t-butyl) acrylate, sec-butyl (meth) acrylate, pentyl (meth) acrylate, 2-ethylhexyl (2-ethylhexyl) acrylate, 2-ethylbutyl (2-ethylbutyl) acrylate, n-octyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (iso) acrylate, n-butyl (meth) acrylate, n-butyl (n-butyl) acrylate, n-butyl (t-butyl) acrylate, n-butyl (meth) acrylate, Isooctyl (meth) acrylate, (isononyl (meth) acrylate), (lauryl (meth) acrylate), (tetradecyl (meth) acrylate), (acrylic acid), (methacrylic acid), (2- (meth) acryloxyacetate), 3- (meth) acryloxypropionate, (3- (meth) acryloxypropionate), (4- (meth) acryloxybutyrate, (2-hydroxyethyl (meth) acrylate), (4-hydroxyethyl (meth) acrylate), 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 2-hydroxyethylene glycol (meth) acrylate, 2-hydroxy ethylene glycol (meth) acrylate, or 2-hydroxypropylene glycol (meth) acrylate, and combinations thereof.
The functional monomer may be a crosslinking agent, a heat-resistant monomer and/or a diluting monomer.
In the above embodiment, the acrylic curable compound may be an acrylic photocurable compound, and the adhesive composition may further include a photoinitiator. The photoinitiator is contained in an amount of 1 wt% or more and 10 wt% or less based on the total content of the adhesive composition.
Photoinitiators are, for example, oximes (e.g.acyloximes (acyloximes), ketoximes (ketoneoximes) or other oximes), benzoins and derivatives (e.g.benzoins, benzoin bis-methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin butyl ether), benzils (Benzil), alkylbenzophenones (e.g.alpha-Hydroxyalkylphenone (HAPK)), acylphosphorus oxides (e.g.alkyldiacylphosphine oxides), benzophenones (benzophenones), thioxanthones (thioxanthone-9-one) and other organic photoinitiators; or cationic photoinitiators such as diazonium salts, diaryliodonium salts (diaryliodonium salts), triarylsulfonium salts (triarylsulfonium salts), alkylsulfonium salts (alkylsulfonium salts), iron arene salts (aryliron salts), sulfoxyl ketones (sulfophenyl ketones), and triarylsiloxy ethers; or a derivative thereof or a combination thereof.
In one embodiment, the adhesive composition is free of organic solvent. Examples of the organic solvent include n-hexane (n-hexane), toluene (toluene), xylene (xylene), and methyl isobutyl ketone (methyl isobutylketone), and the like, alone or in combination. Therefore, the composite material 100, 200 can reduce the process contamination when used in semiconductor processes (such as baking, thermal deposition, exposure development, or other semiconductor processes with high or low temperature).
After the adhesive layer 120 and the object (e.g., the semiconductor structure 300) are attached to each other, they can be separated from each other by an external force at a temperature higher than 45 ℃, preferably between 45 ℃ and 90 ℃.
In the above embodiment, the heat-shrinkable layer 110 includes a heat-shrinkable composition. The heat-shrinkable composition includes a resin and a hardener. In the total content of the heat shrinkable composition, the content of the resin is 50 wt% or more and 75 wt% or less, and the content of the hardener is 15 wt% or more and 25 wt% or less.
The resin may include one, more or a combination of unsaturated polyester resins, epoxy resins, phenolic resins, urea resins, silicone resins, polyurethanes, BT resins, polyimide resins.
The hardener may comprise a compound selected from the group consisting of imidazole and derivatives thereof; guanamines such as acetoguanamine and benzoguanamine; polyamines such as diaminodiphenylmethane, m-phenylenediamine, m-xylylenediamine, diaminodiphenylsulfone, dicyanodiamide, urea derivatives, melamine, and polyhydrazides; an amine complex of boron trifluoride; triazine derivatives such as ethyldiamino-S-triazine, 2, 4-diamino-S-triazine, and 2, 4-diamino-6-stubble-S-triazine; amines such as trimethylamine, triethanolamine, N-dimethyloctylamine, N-benzyldimethylamine, pyridine, N-methylmorpholine, hexa (N-methyl) melamine, 2,4, 6-tris (dimethylaminophenol), tetramethylguanidine, and m-aminophenol; polyphenols such as polyvinyl phenol, polyvinyl phenol bromide, phenol novolac, and alkylphenol novolac; organic phosphines such as tributylphosphine, triphenylphosphine, and tris-2-cyanoethylphosphine; phosphonium salts such as tri-n-butyl (2, 5-dihydroxyphenyl) phosphonium bromide and hexadecyltributylphosphonium chloride; 4-grade ammonium salts such as benzyl trimethyl ammonium chloride and phenyl tributyl ammonium chloride; the above polybasic acid anhydrides; iodonium tetrafluoroborate, triphenylsulfonium hexafluoroantimonate, 2,4, 6-trithiopyrylium hexafluorophosphate, and a photocationic polymerization catalyst; styrene-maleic anhydride resin; a curing accelerator or a curing agent comprising one of the group consisting of equimolar reactants of phenyl isocyanate and dimethylamine, equimolar reactants of organic polyisocyanates such as tolylene diisocyanate and isophorone diisocyanate and dimethylamine, and combinations thereof.
In one embodiment, the heat-shrinkable composition may further include an additive. The additive includes, for example, one of the group consisting of an adhesion agent, a leveling agent, an antifoaming agent, a solvent, a coloring material, and combinations thereof.
The application of the composite materials 100 and 200 of the above embodiments in the manufacturing method of electronic products can be as follows. It should be noted that the present invention is not limited to the application or use of the composite materials 100, 200. The composite materials 100 and 200 of the above embodiments can be applied in various ways according to their characteristics. A flow chart of a method of manufacturing an electronic product may be as shown in fig. 3.
Referring to fig. 3, in step S301, the composite adhesive material is attached to the semiconductor structure with the attaching surface facing the semiconductor structure. For example, as shown in fig. 1B, the composite tape 100 may be attached to the semiconductor structure 300 such that the attachment surface 120a faces the semiconductor structure 300. For another example, as shown in fig. 2B, the composite tape 200 may be attached to the semiconductor structure 300 such that the attachment surface 120a faces the semiconductor structure 300.
Referring to fig. 3, in step S302, the semiconductor structure and the composite material attached thereon are heated so that the curvature of the attachment surface after heating is smaller than the curvature of the attachment surface before heating. For example, as shown in fig. 1B, the curvature of the bonding surface 120 a' after heating is smaller than the curvature of the bonding surface 120a before heating. For another example, as shown in fig. 2B, the curvature of the bonding surface 120 a' after heating is smaller than the curvature of the bonding surface 120a before heating.
Referring to fig. 3, in step S303, a semiconductor process is performed on the heated semiconductor structure 300. For example, as shown in fig. 1B, a semiconductor process may be performed on the surface 300 a' of the semiconductor structure 300. Also for example, as shown in FIG. 2B, a semiconductor process may be performed on the surface 300 a' of the semiconductor structure 300.
Referring to fig. 3, in step S304, after the semiconductor process is performed, the composite adhesive material on the semiconductor structure is removed.
Examples and comparative examples
The present invention will be explained in detail with reference to examples and comparative examples below, but the present invention is not limited to the following examples at all.
Examples 1 to 3 and comparative examples 1 to 2
The composite laminates of [ examples 1] to [ example 3] and [ comparative examples 1] to [ comparative example 2] having the compositions shown in [ table 1] were evaluated. The evaluation items were adhesion and residual adhesive properties. The adhesion was tested by a standard test method of JISZ 02378. The residual glue property is that the adhesive is torn by the standard test method of JISZ 02378, and whether the residual glue is left on the stuck object by the composite sticking material is judged.
[ Table 1]
Figure BDA0002293606400000091
In the composite sticker of [ comparative example 1], residual glue remained on the pasted material after the tearing.
In the composite sticker of [ comparative example 2], no adhesive residue may remain on the adherend after tearing. However, since the adhesive force is low (less than 500gf/inch), it cannot be tightly adhered to the object to be adhered.
Examples 4 to 6 and comparative examples 3 to 4
The composite laminates of [ examples 4] to [ example 6] and [ comparative examples 3] to [ comparative example 4] having the compositions shown in [ table 2] were evaluated. The evaluation item was a curable molding for preparing a shrink layer. And, cutting is performed after curing molding, and there is no damage or chipping in appearance.
[ Table 2]
Figure BDA0002293606400000101
In the composite skin material of [ comparative example 3], the heat-shrinkable layer was poorly cured.
In the composite skin material of [ comparative example 4], the cured and molded heat-shrinkable layer was cut, and the appearance was damaged or chipped.
Examples 7 to 9
The following [ example 7] to [ example 9] are specific illustrations of the ability of the composite tape of the present invention to apply a reverse pulling force to a warped semiconductor structure (e.g., a chip) after heating, thereby potentially reducing the warpage of the semiconductor structure. However, the present invention is not limited at all by the following examples.
Fig. 4A is a top view when an actual test is performed according to [ example 7 ]. FIG. 4B is a side view showing the change in the degree of warpage before and after heating in accordance with [ example 7 ]. Fig. 5A is a top view when an actual test is performed according to [ example 8 ]. FIG. 5B is a side view showing the change in the degree of warpage before and after heating in accordance with [ example 8 ]. Fig. 6A is a top view when an actual test is performed according to [ example 9 ]. FIG. 6B is a side view showing the change in the degree of warpage before and after heating in accordance with [ example 9 ].
In [ example 7] to [ example 9], the initial chips used had substantially the same warpage, and the test conditions were substantially the same. Specifically, in [ example 7] to [ example 9], the test was performed using a 12-inch chip having the same warpage with heating conditions of 240 ℃x3 hr x 5 cycles. Further, in the composite materials used in [ example 7] to [ example 9], the compositions of the adhesive layer and the heat-shrinkable layer are substantially the same, and the difference is that: the thickness of the heat-shrinkable layer is different.
Fig. 4A to 6B are actual test charts showing the adjustment of the warpage of the semiconductor structure by using the composite adhesive material with different thickness of the thermal shrinkage layer.
[ example 7]
As shown in fig. 4A, a2, a6, A8, and a4 in fig. 4A indicate four positions of the chip, and [ table 3] shows changes in the degree of warpage of the chip before and after the chip and the composite material bonded to the chip are subjected to the above-described heating conditions, and indicates the directions of warpage as positive (+) and negative (-) signs. In addition, as shown in fig. 4B, the change in the appearance of the warpage was confirmed by actual measurement in the side view direction. In [ example 7], the thickness of the heat-shrinkable layer was 100 micrometers (μm).
[ Table 3]
Figure BDA0002293606400000111
It can be seen from table 3 and fig. 4B that the composite material of the present invention can generate a counter-pulling force on the warped chip. In addition, as shown in fig. 4B, the composite adhesive material attached to the chip was not peeled off, and the heat resistance was satisfactory as the appearance was not deteriorated.
[ example 8]
As shown in fig. 5A, a2, a6, A8, and a4 in fig. 5A indicate four positions of the chip, and [ table 4] shows changes in the degree of warpage of the chip before and after the chip and the composite material bonded to the chip are subjected to the above-described heating conditions, and indicates the directions of warpage as positive (+) and negative (-) signs. In addition, as shown in fig. 5B, the change in the appearance of the warpage was confirmed by actual measurement in the side view direction. In [ example 8], the thickness of the heat-shrinkable layer was 200 micrometers (μm).
[ Table 4]
Figure BDA0002293606400000112
It can be seen from table 4 and fig. 5B that the composite material of the present invention can generate a counter-pulling force on the warped chip. In addition, as shown in fig. 5B, the composite adhesive material attached to the chip was not peeled off, and the heat resistance was satisfactory as the appearance was not deteriorated.
[ example 9]
As shown in fig. 6A, a2, a6, A8, and a4 in fig. 6A indicate four positions of the chip, and [ table 4] shows changes in the degree of warpage of the chip before and after the chip and the composite material bonded to the chip are subjected to the above-described heating conditions, and indicates the directions of warpage as positive (+) and negative (-) signs. In addition, as shown in fig. 6B, the change in the appearance of the warpage was confirmed by actual measurement in the side view direction. In [ example 8], the thickness of the heat-shrinkable layer was 300 micrometers (μm).
[ Table 5]
Figure BDA0002293606400000121
From [ table 5] and fig. 6B, it can be known that the composite material of the present invention can generate a reverse pulling force on the warped chip. As shown in fig. 6B, the composite adhesive material attached to the chip was not peeled off, and the appearance was not deteriorated, indicating that the heat resistance was satisfactory.
In addition, as shown in the results of [ example 7] to [ example 9], for chips with different warpage, the warpage of the chip can be reduced at least by adjusting the thickness of the heat-shrinkable layer of the composite paste.
To sum up, the utility model discloses a compound material of pasting is applicable in chip technology, chip package technology or other similar semiconductor processes, and can reduce the warpage of its semiconductor construction of laminating after the heating.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention.

Claims (3)

1. A composite laminate adapted to be bonded to a semiconductor structure, the composite laminate comprising:
the laminating layer is provided with a laminating surface, and the composite laminating material is suitable for being laminated on the semiconductor structure in a mode that the laminating surface faces the semiconductor structure; and
the heat-shrinkable layer is configured on the surface of the binding layer opposite to the binding surface, wherein the binding surface of the composite material has a first curvature before heating, the binding surface of the composite material has a second curvature after heating, and the first curvature is larger than the second curvature.
2. The composite skin material of claim 1, wherein the thickness of the heat shrinkable layer is between 10 microns and 1000 microns.
3. The composite facestock according to claim 1, further comprising:
the base material is positioned between the laminating layer and the heat shrinkable layer.
CN201922090627.1U 2019-07-23 2019-11-28 Composite adhesive material Active CN211497466U (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
TW108125938 2019-07-23
TW108125938 2019-07-23
TW108139158A TWI718734B (en) 2019-07-23 2019-10-30 Composite bonding material and method of manufacturing electronic device
TW108139158 2019-10-30

Publications (1)

Publication Number Publication Date
CN211497466U true CN211497466U (en) 2020-09-15

Family

ID=72412008

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201911191214.0A Active CN112300722B (en) 2019-07-23 2019-11-28 Composite adhesive material and manufacturing method of electronic product
CN201922090627.1U Active CN211497466U (en) 2019-07-23 2019-11-28 Composite adhesive material

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201911191214.0A Active CN112300722B (en) 2019-07-23 2019-11-28 Composite adhesive material and manufacturing method of electronic product

Country Status (1)

Country Link
CN (2) CN112300722B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115359728A (en) * 2022-09-23 2022-11-18 昆山国显光电有限公司 Flexible display panel, profiling jig and display device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5087372B2 (en) * 2007-11-19 2012-12-05 日東電工株式会社 Resin laminate, pressure-sensitive adhesive sheet, method of processing an adherend using the pressure-sensitive adhesive sheet, and apparatus for peeling the same
JP2009275060A (en) * 2008-05-12 2009-11-26 Nitto Denko Corp Adhesive sheet, method for processing adherend using the adhesive sheet, and adhesive sheet-peeling device
JP2010100686A (en) * 2008-10-21 2010-05-06 Nitto Denko Corp Spontaneously winding adhesive sheet
WO2011132648A1 (en) * 2010-04-20 2011-10-27 日東電工株式会社 Film for back surface of flip-chip semiconductor, dicing-tape-integrated film for back surface of semiconductor, process for producing semiconductor device, and flip-chip semiconductor device
CN103667652B (en) * 2013-11-30 2016-01-06 无锡宝顺不锈钢有限公司 The production method of electric thin Stainless Steel Band

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115359728A (en) * 2022-09-23 2022-11-18 昆山国显光电有限公司 Flexible display panel, profiling jig and display device
CN115359728B (en) * 2022-09-23 2023-12-22 昆山国显光电有限公司 Flexible display panel, profiling jig and display device

Also Published As

Publication number Publication date
CN112300722B (en) 2022-09-20
CN112300722A (en) 2021-02-02

Similar Documents

Publication Publication Date Title
KR100991940B1 (en) Adhesive bonding sheet
JP5473262B2 (en) Adhesive composition, adhesive sheet and method for producing semiconductor device
KR102169223B1 (en) Film-like adhesive, adhesive sheet for semiconductor junction, and method for producing semiconductor device
KR101023844B1 (en) Adhesive resin composition, adhesive film, dicing die bonding film and semiconductor device using the same
JP5725329B2 (en) Dicing die bonding film and semiconductor device with excellent burr characteristics and reliability
KR101105470B1 (en) Semiconductor chip laminate and adhesive composition for semiconductor chip lamination
KR101136599B1 (en) Adhesive composition, adhesive sheet for connecting circuit member, and method for manufacturing semiconductor device
KR100845092B1 (en) Adhesive composition for a semiconductor packing, adhesive film, dicing die bonding film and semiconductor device using the same
KR20080088487A (en) Adhesive composition, adhesive sheet and production process for semiconductor device
KR20080047990A (en) Adhesive composition, adhesive sheet and production process for semiconductor device
JP4466397B2 (en) Adhesive film for semiconductor and semiconductor device using the same
KR102346224B1 (en) Adhesive composition, adhesive sheet, and method for producing semiconductor device
JP5467720B2 (en) Adhesive composition, adhesive sheet and method for producing semiconductor device
CN211497466U (en) Composite adhesive material
JP5005325B2 (en) Adhesive composition, adhesive sheet and method for producing semiconductor device
KR101675054B1 (en) Adhesive tape for component-embedded print circuit board and method for preparing the same
JP2015220377A (en) Adhesive film integrated surface protective film and method for manufacturing semiconductor chip using adhesive film integrated surface protective film
JP2011061174A (en) Method of laminating adhesive tape, and lead frame
JP5414256B2 (en) Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device
TWI718734B (en) Composite bonding material and method of manufacturing electronic device
EP2927952B1 (en) Sheet for forming resin film for chips and method for manufacturing semiconductor device
US20140290843A1 (en) Method of preparing an adhesive film into a precut semiconductor wafer shape on a dicing tape
KR101147841B1 (en) Adhesive tape for manufacturing electronic component
KR101427903B1 (en) Adhesive tape for dicing and die bond
KR20220004964A (en) The manufacturing method of a 3rd laminated body, the manufacturing method of a 4th laminated body, the manufacturing method of the semiconductor device with a back surface protective film, and 3rd laminated body

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant