CN211471545U - Chemical vapor deposition planet tray device - Google Patents
Chemical vapor deposition planet tray device Download PDFInfo
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- CN211471545U CN211471545U CN201921592172.7U CN201921592172U CN211471545U CN 211471545 U CN211471545 U CN 211471545U CN 201921592172 U CN201921592172 U CN 201921592172U CN 211471545 U CN211471545 U CN 211471545U
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 34
- 230000005540 biological transmission Effects 0.000 claims abstract description 66
- 230000008878 coupling Effects 0.000 claims abstract description 29
- 238000010168 coupling process Methods 0.000 claims abstract description 29
- 238000005859 coupling reaction Methods 0.000 claims abstract description 29
- 239000007789 gas Substances 0.000 claims description 53
- 238000006243 chemical reaction Methods 0.000 claims description 28
- 239000010453 quartz Substances 0.000 claims description 19
- 239000012495 reaction gas Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 229910002804 graphite Inorganic materials 0.000 claims description 13
- 239000010439 graphite Substances 0.000 claims description 13
- 238000004891 communication Methods 0.000 claims description 2
- 230000009347 mechanical transmission Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 15
- 239000000758 substrate Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000002775 capsule Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 210000003781 tooth socket Anatomy 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
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Abstract
The utility model discloses a chemical vapor deposition planet tray device, including a basal disc, a drive disk and a plurality of and the planetary plate of drive disk meshing, drive disk and planetary plate clearance set up in the cavity of basal disc, and the cavity bottom is equipped with an opening, is equipped with a transmission coupling assembling in the opening, and transmission coupling assembling one end is connected with the drive disk transmission, and the transmission coupling assembling other end is connected with the basal disc transmission, the basal disc or transmission coupling assembling is rotatory by a actuating mechanism drive, and then drives the drive disk and rotate, and transmission coupling assembling bottom is equipped with a support air intake assembly who supplies the auxiliary gas to get into, supports air intake assembly and communicates through a plurality of inlet ports and opening on the transmission coupling assembling. The planetary discs are driven to rotate by mechanical transmission, the rotating speeds of the planetary discs are ensured to be consistent, meanwhile, auxiliary gas is injected to suspend the planetary discs, the planetary discs are assisted to rotate, mechanical vibration is eliminated, and the rotating stability of the planetary discs is improved.
Description
Technical Field
The utility model belongs to the technical field of semiconductor device makes, especially, relate to a chemical vapor deposition planet tray device.
Background
Chemical Vapor Deposition (CVD) is a process technique in which reaction substances are chemically reacted in a gaseous state to generate solid substances, and the solid substances are deposited on the surface of a heated solid substrate to prepare a solid material, and is implemented by a Chemical vapor deposition device. Specifically, the CVD apparatus introduces a reaction gas into the reaction chamber through the gas inlet device, and controls reaction conditions such as pressure and temperature of the reaction chamber, so that the reaction gas reacts, thereby completing the deposition process step. The chemical vapor deposition apparatus is a critical step in the semiconductor device manufacturing process.
The design of the reactor is critical in performing epitaxial growth on wafers or in performing chemical vapor deposition processes. In the prior art, there are various designs of reactors, including: a horizontal reaction chamber in which the wafer is installed at an angle to the gas flowing into the sub-reaction chamber; a vertical reactor in which a substrate is placed on a substrate carrier in a reaction chamber and rotated at a relatively high speed while reaction gas is injected downward into the substrate; a planetary rotating horizontal reactor in which a reaction gas is injected into the reactor from a central position of a base plate, diffused toward the planetary plate in a radial direction, horizontally flows over an upper surface of a wafer to be processed, and a reaction chamber gas reacts at a high temperature on the surface of the wafer to form a deposition layer.
Currently, a planetary rotating horizontal reactor is one of the mainstream CVD reactors commercialized. Carrier uniformity is a critical technique to control the in-wafer thickness of the wafer, and the thickness of the epitaxial layer from wafer to wafer. In the existing CVD planetary rotating horizontal reactor, the rotation driving of the planetary plate mostly adopts the design of gas suspension, for example, Chinese patent with application number 201110133831.2, named as the forming method and device of the tray in the planetary epitaxial growth equipment, the invention discloses the specific structure of the tray device, which comprises a main tray 1, a tension plate 2, a substrate box component, etc., the reaction gas enters a cavity 81 of the gas phase metal organic compound for chemical deposition epitaxial growth reaction through the inner hole of a quartz sleeve 442, firstly contacts the tension plate 2 in the middle of the rotating main tray, the reaction gas continuously and uniformly diffuses to the cavity along the radial direction of the bottom surface of the main tray 1, the concentration field and the temperature field of the reaction gas gradually decrease from the center to the outside along the radial direction of the tray, the concentration and the temperature of the reaction gas are high in the part of the substrate close to the center of the tray, and the substrate is far away from the center of the tray, the concentration and the temperature of the reaction gas are low, and the substrate box assembly drives the substrate to rotate around the axis of the substrate at a constant speed continuously, so that the substrate obtains the same concentration field and temperature field of a reaction gas source, thereby ensuring that the substrate obtains an epitaxial growth layer with uniform thickness or doping concentration.
Therefore, the inventors have endeavored to design a chemical vapor deposition planetary tray apparatus to solve the above problems.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a: the utility model provides a chemical vapor deposition planet tray device, drives the base plate and the transmission dish rotates through actuating mechanism, and then drives a plurality of planetary discs and rotate, guarantees that the rotational speed of each planetary disc is unanimous, and simultaneously, supplementary gas makes a plurality of planetary discs suspend, and supplementary planetary disc rotates, eliminates mechanical vibration, improves planetary disc pivoted stability.
In order to achieve the above object, the utility model discloses a technical scheme who adopts is:
the utility model provides a chemical vapor deposition planet tray device, including a basal disc, a drive disk and a plurality of with the planetary disc of drive disk meshing, drive disk and planetary disc clearance set up in the cavity of basal disc, the cavity bottom is equipped with an opening, be equipped with a transmission coupling assembling in the opening, transmission coupling assembling one end with the drive disk transmission is connected, the transmission coupling assembling other end with the basal disc transmission is connected, the basal disc or transmission coupling assembling is driven rotatoryly by a actuating mechanism, and then drives the drive disk rotates, transmission coupling assembling bottom is equipped with a support air intake assembly who supplies the auxiliary gas to get into, support air intake assembly pass through a plurality of inlet ports on the transmission coupling assembling with the opening intercommunication.
Further, transmission coupling assembling includes an upper gear, a pivot and a pinion, the upper gear with pass through between the pinion pivot fixed connection, the upper gear with the internal gearing of driving disc, the pinion with the internal gearing of base plate.
Furthermore, a polygonal mounting groove is formed in the bottom of the lower gear, an annular connecting groove is formed in the bottom of the mounting groove, the plurality of air inlet holes are formed in the bottom of the connecting groove, and the connecting groove is used for communicating the plurality of air inlet holes to facilitate air diffusion.
Further, the support air inlet assembly comprises a quartz tube and a graphite tube, the graphite tube is sleeved outside the quartz tube and is installed on the installation groove, and the quartz tube is communicated with the air inlet holes in a plurality of connection grooves.
Furthermore, a chute is arranged on the lower gear, the outer side wall of the chute is partially inclined, so that gas is conveniently guided to the outer side, and the chute is communicated with the plurality of gas inlet holes.
Further, the driving mechanism comprises a driving motor and a driving gear set, and the driving motor drives the base plate or the lower gear to rotate through the driving gear set.
Preferably, one end of the driving gear set is sleeved outside the base disc, the other end of the driving gear set is sleeved on a driving shaft of the driving motor, and the driving motor drives the base disc to rotate through the driving gear set.
Furthermore, the auxiliary gas enters from the supporting gas inlet assembly and enters the opening through the plurality of gas inlet holes, the auxiliary gas in the opening horizontally turns and diffuses and then enters a gap between the transmission disc and the base disc, part of the auxiliary gas enters the reaction chamber from the tooth grooves of the transmission disc, and the other part of the auxiliary gas enters the reaction chamber from the tooth grooves of the planetary disc through the bottom of the planetary disc.
Further, when the auxiliary gas enters the reaction chamber, a gas inlet device right above the transmission disc vertically injects reaction gas into the reaction chamber, and the reaction gas diffuses to the surfaces of the plurality of planetary discs along the radial direction of the transmission disc.
In order to achieve the above object, the utility model discloses another kind of technical scheme who adopts does:
the utility model provides a chemical vapor deposition planet tray device, including a basal disc, a drive disk and a plurality of with the planetary disc of drive disk meshing, drive disk and planetary disc clearance set up in the cavity of basal disc, the cavity bottom is equipped with an opening, be equipped with a transmission coupling assembling in the opening, transmission coupling assembling one end with the drive disk transmission is connected, the transmission coupling assembling other end with the basal disc transmission is connected, the basal disc or transmission coupling assembling is driven rotatoryly by a actuating mechanism, and then drives the drive disk rotates, transmission coupling assembling bottom is equipped with a support air intake assembly who supplies the auxiliary gas to get into, support air intake assembly pass through a plurality of inlet ports on the transmission coupling assembling with the opening intercommunication.
Further, transmission coupling assembling includes an upper gear, a pivot and a pinion, the upper gear with pass through between the pinion pivot fixed connection, the upper gear with the internal gearing of driving disc, the pinion with the internal gearing of base plate.
Furthermore, a polygonal mounting groove is formed in the bottom of the lower gear, an annular connecting groove is formed in the bottom of the mounting groove, the plurality of air inlet holes are formed in the bottom of the connecting groove, and the connecting groove is used for communicating the plurality of air inlet holes to facilitate air diffusion.
Further, the support air inlet assembly comprises a quartz tube and a graphite tube, the graphite tube is sleeved outside the quartz tube and is installed on the installation groove, and the quartz tube is communicated with the air inlet holes in a plurality of connection grooves.
Furthermore, a chute is arranged on the lower gear, the outer side wall of the chute is partially inclined, so that gas is conveniently guided to the outer side, and the chute is communicated with the plurality of gas inlet holes.
Further, the driving mechanism comprises a driving motor and a driving gear set, and the driving motor drives the base plate or the lower gear to rotate through the driving gear set.
Preferably, the lower end of the lower gear extends out of the base plate, the extending end of the lower gear is provided with driving gear teeth and is meshed with one or more meshed gears to form the driving gear set, and the driving motor drives the driving gear set to rotate the lower gear.
Furthermore, the auxiliary gas enters from the supporting gas inlet assembly and enters the opening through the plurality of gas inlet holes, the auxiliary gas in the opening horizontally turns and diffuses and then enters a gap between the transmission disc and the base disc, part of the auxiliary gas enters the reaction chamber from the tooth grooves of the transmission disc, and the other part of the auxiliary gas enters the reaction chamber from the tooth grooves of the planetary disc through the bottom of the planetary disc.
Further, when the auxiliary gas enters the reaction chamber, a gas inlet device right above the transmission disc vertically injects reaction gas into the reaction chamber, and the reaction gas diffuses to the surfaces of the plurality of planetary discs along the radial direction of the transmission disc.
Compared with the prior art, the utility model discloses a chemical vapor deposition planet tray device has following technological effect: the motor drives the base plate and the transmission plate to rotate through the transmission connecting assembly, and then drives the plurality of planetary plates to rotate, so that the rotating speeds of the planetary plates are consistent, the temperature of each planetary plate and the flow field of airflow above the planetary plate are consistent, the process result consistency is good, the product yield is improved, meanwhile, the auxiliary gas self-supporting gas inlet assembly enters an opening of the base plate and enters a gap between the planetary plates and the base plate after being horizontally turned, the planetary plates are suspended, mechanical vibration is eliminated, the rotating stability of the planetary plates is improved, and meanwhile, the heat of the tray device is taken away.
Drawings
FIG. 1 is a perspective view of the base plate of the present invention;
FIG. 2 is a top view of the base plate of the present invention;
FIG. 3 is a perspective view of the chemical vapor deposition planetary tray device of the present invention;
FIG. 4 is a sectional view, a partial enlarged view and an air inlet schematic view of a first embodiment of the chemical vapor deposition planetary tray device of the present invention;
FIG. 5 is an enlarged view taken at A in FIG. 4;
fig. 6 is a perspective view of the lower gear of the first embodiment of the present invention;
fig. 7 is another perspective view of the lower gear according to the first embodiment of the present invention;
FIG. 8 is a cross-sectional view and a schematic gas inlet view of a second embodiment of the chemical vapor deposition planetary tray apparatus of the present invention;
FIG. 9 is an enlarged view at B in FIG. 8;
fig. 10 is a perspective view of a lower gear of a second embodiment of the present invention;
fig. 11 is a perspective view of the lower gear according to the second embodiment of the present invention from another perspective.
Illustration of the drawings:
1. the base plate, 11, the internal tooth, 2, the driving disk, 3, the planetary disk, 31, bear the post, 4, transmission coupling assembling, 41, go up the gear, 42, the pivot, 43, the lower gear, 431, the inlet port, 432, the chute, 433, the spread groove, 434, the mounting groove, 435, the drive teeth of a cogwheel, 5, support air inlet assembly, 51, the quartz capsule, 52, the graphite pipe, 6, actuating mechanism, 61, drive gear group, 62, driving motor, 7, inlet channel, 8, the bearing frame, 100, the planet tray device, 200, air inlet unit.
Detailed Description
The following embodiments of the present invention will be specifically explained with reference to the accompanying drawings, which are only used for reference and illustration, and do not limit the scope of the present invention.
As shown in fig. 1 to 3, a chemical vapor deposition planetary tray device 100 includes a base plate 1, a driving plate 2 and a plurality of planetary plates 3, the driving plate 2 is engaged with the plurality of planetary plates 3, the driving plate 2 and the plurality of planetary plates 3 are both disposed in a cavity of the base plate 1 with a gap therebetween, the center of each planetary plate 3 is rotatably connected to a protruding shaft of the base plate 1 through a bearing, a carrying column 31 is fixed at the center of the planetary plate 3, a wafer is sleeved on the carrying column 31, and the whole tray device 100 is disposed in a reaction chamber.
Example 1
As shown in fig. 4 to 7, which are the first embodiment of the chemical vapor deposition planetary tray device 100 of the present invention, the chemical vapor deposition planetary tray device 100 of the present embodiment further includes a transmission connection assembly 4, a support air intake assembly 5, a driving mechanism 6, and a bearing seat 8.
As shown in fig. 4, the transmission connection assembly 4 is located in the opening at the bottom of the cavity of the base plate 1, the transmission connection assembly 4 includes an upper gear 41, a rotating shaft 42 and a lower gear 43, the upper gear 41 is fixedly connected with the lower gear 43 through the rotating shaft 42, the upper gear 41 is located in the circular groove at the lower end of the transmission plate 2 and is engaged with the internal teeth in the circular groove at the lower end of the transmission plate 2, as shown in fig. 5, 6 and 7, the lower gear 43 is located in the opening of the base plate 1 and is engaged with the internal teeth 11 on the side wall of the opening of the base plate 1, a plurality of air inlet holes 431 are formed through the lower gear 43, a chute 432 is formed on the lower gear 43, the outer side wall of the chute 432 is partially inclined, a mounting groove 434 having a polygonal shape is formed at the bottom of the mounting groove 434, an annular connecting groove 433 is formed at the bottom of the connecting groove 433 and the chute 432, the connecting groove 433, the plurality of air inlet holes 431, the chute 432, the opening of the base plate 1 and the gap between the transmission plate 2 and the base plate 1 jointly form an air inlet channel 7.
As shown in fig. 4, the driving mechanism 6 of the present embodiment is used for driving the base plate 1 to rotate, the driving mechanism 6 includes a driving motor 62 and a driving gear set 61, preferably, two meshed gears in the present embodiment form the driving gear set 61, one of the gears is sleeved and fixed outside the extending portion of the lower end of the base plate 1, the other gear is sleeved on a driving shaft of the driving motor 62, and the driving motor 62 directly drives the base plate 1 to rotate through the transmission of the driving gear set.
As shown in fig. 4 and 5, the supporting air intake assembly 5 is used for supporting the whole transmission connection assembly 4, so as to support the transmission disc 2, and meanwhile, the supporting air intake assembly 5 is further used for allowing auxiliary gas to enter, the supporting air intake assembly 5 includes a quartz tube 51 and a graphite tube 52, the graphite tube 52 is sleeved outside the quartz tube 51 and is fixedly installed on the installation groove 434, the quartz tube 51 is communicated with the plurality of air inlets 431 through the connection groove 433, so that the inner hole of the quartz tube 51 is in butt joint communication with the air intake channel 7, so as to allow the auxiliary gas to enter.
As shown in fig. 4, the bearing seat 8 is sleeved on the graphite tube 52 and the extended portion of the lower end of the base plate 1, and the bearing seat 8 is in clearance fit with the graphite tube 52, so that when the base plate 1 rotates, the base plate 1 drives the supporting component 5 to rotate together through the lower gear 43.
As shown in fig. 4, the mechanical transmission principle of the cvd planetary tray apparatus 100 of this embodiment is as follows: the driving motor 62 drives the base plate 1 to rotate through the driving gear set 61, the base plate 1 drives the lower gear 43 to rotate, the lower gear 43 drives the quartz tube 51 and the graphite tube 52 to rotate together, meanwhile, the lower gear 43 drives the upper gear 41 to rotate through the rotating shaft 42, the upper gear 41 drives the transmission plate 2 to rotate, the transmission plate 2 drives the plurality of planetary plates 3 to rotate, and then the wafer on the bearing column 31 is driven to rotate.
Example 2
As shown in fig. 8, 9, 10 and 11, a second embodiment of the cvd planetary tray apparatus 100 of the present invention is provided, and the present embodiment is different from the first embodiment in that: in the embodiment, the lower end of the lower gear 43 extends out of the base plate 1, the extending end of the lower gear 43 is provided with the driving gear 435 and is meshed with one or more meshed gears to form the driving gear set 61, preferably, the driving gear 435 at the extending end of the lower gear 43 is meshed with one gear to form the driving gear set 61, the gear is sleeved on the driving motor 62, and the driving motor 62 is meshed with the driving gear 435 through the gear to directly drive the lower gear 43 to rotate.
As shown in fig. 8, the mechanical transmission principle of the cvd planetary tray apparatus 100 of this embodiment is: the driving motor 62 drives the lower gear 43 to rotate through the driving gear set 61, on one hand, the lower gear 43 drives the base plate 1 to rotate, on the other hand, the lower gear 43 drives the quartz tube 51 and the graphite tube 52 to rotate together, meanwhile, the lower gear 43 drives the upper gear 41 to rotate through the rotating shaft 42, the upper gear 41 drives the transmission plate 2 to rotate, and the transmission plate 2 drives the plurality of planetary plates 3 to rotate, so as to drive the wafers on the bearing column 31 to rotate.
As shown in fig. 4, fig. 5, fig. 8 and fig. 9, the two embodiments of the present invention have the same air intake method for the chemical vapor deposition planetary tray device, and the specific air intake method is: auxiliary gas is injected from an inner hole of the quartz tube 51, the auxiliary gas enters the opening of the base plate 1 through the connecting groove 433, the plurality of gas inlet holes 431 and the chute 432 in sequence, the auxiliary gas in the opening of the base plate 1 horizontally turns and then radially diffuses along the transmission plate 2 and enters a gap between the transmission plate 2 and the base plate 1, part of the auxiliary gas enters a reaction chamber from a tooth socket of the transmission plate 2, the other part of the auxiliary gas passes through the gap at the bottom of the planetary plate 3 and enters the reaction chamber from the tooth socket of the planetary plate 3, since the gas inlet device 200 is arranged right above the transmission disc 2, when the auxiliary gas enters the reaction chamber, reaction gas is vertically injected into the reaction chamber from the gas inlet device 200 and is diffused to the surfaces of the plurality of planetary discs 2 along the radial direction of the transmission disc 2, the reaction gas horizontally flows over the upper surface of the wafer to be processed, and the reaction of the reaction chamber gas is carried out on the surface of the wafer at high temperature to form a deposition layer.
The utility model discloses a mechanical transmission drives the planetary plate and rotates, and then it rotates with the same speed synchronization to drive the wafer on the different planetary plates, ensure chemical vapor deposition's process uniformity, promote the product yield, and simultaneously, supplementary gas gets into inlet channel from the quartz capsule, make the planetary plate suspension, with the mechanical normal running fit of planetary plate, supplementary planetary plate rotates, improve planetary plate rotational stability, reaction gas pours into the reacting chamber perpendicularly into, and to the planetary plate diffusion, horizontal flow is through treating to process the wafer upper surface, the wafer surface reacts the sedimentary deposit that formation manufacturability uniformity is good under the high temperature condition.
The above disclosure is only for the preferred embodiments of the present invention, and the scope of the present invention should not be limited thereby, and the scope of the present invention is not intended to be limited thereby.
Claims (10)
1. The utility model provides a chemical vapor deposition planet tray device, including a basal disc, a drive disk and a plurality of with the planetary disc of drive disk meshing, drive disk and planetary disc clearance set up in the cavity of basal disc, a serial communication port, the cavity bottom is equipped with an opening, be equipped with a transmission coupling assembling in the opening, transmission coupling assembling one end with the drive disk transmission is connected, the transmission coupling assembling other end with the basal disc transmission is connected, the basal disc or transmission coupling assembling drives rotatoryly by a actuating mechanism, and then drives the drive disk rotates, transmission coupling assembling bottom is equipped with a support subassembly that admits air that supplies auxiliary gas to get into, support subassembly that admits air pass through a plurality of inlet ports on the transmission coupling assembling with the opening intercommunication.
2. The chemical vapor deposition planetary tray device according to claim 1, wherein the transmission connection assembly comprises an upper gear, a rotating shaft and a lower gear, the upper gear is fixedly connected with the lower gear through the rotating shaft, the upper gear is engaged with the internal teeth of the transmission disc, and the lower gear is engaged with the internal teeth of the base disc.
3. The planetary tray device for chemical vapor deposition as claimed in claim 2, wherein the lower gear has a polygonal mounting groove at the bottom thereof, the mounting groove has an annular coupling groove at the bottom thereof, and the plurality of inlet holes are formed at the bottom of the coupling groove.
4. The planetary tray apparatus for chemical vapor deposition according to claim 2, wherein the supporting and air-intake assembly comprises a quartz tube and a graphite tube, the graphite tube is sleeved outside the quartz tube and mounted on the mounting groove, and the quartz tube is communicated with the plurality of air-intake holes through the connecting groove.
5. The planetary tray device for chemical vapor deposition as claimed in claim 2, wherein a chute is provided on the lower gear, an outer side wall of the chute is partially inclined, and the chute is communicated with the plurality of air inlet holes.
6. A planetary tray apparatus for chemical vapor deposition according to claim 2, wherein the driving mechanism comprises a driving motor and a driving gear set, and the driving motor drives the base plate or the lower gear to rotate through the driving gear set.
7. The chemical vapor deposition planetary tray device according to claim 6, wherein one end of the driving gear set is sleeved outside the base plate, the other end of the driving gear set is sleeved on a driving shaft of the driving motor, and the driving motor drives the base plate to rotate through the driving gear set.
8. The CVD planetary tray apparatus according to claim 6, wherein the lower end of the lower gear extends to the outside of the base plate, the extended end of the lower gear is provided with a driving gear and is engaged with one or more engaged gears to form the driving gear set, and the driving motor rotates the lower gear by driving the driving gear set.
9. A chemical vapor deposition planetary tray apparatus as claimed in any one of claims 1 to 8, wherein the auxiliary gas enters from the supporting gas inlet assembly and enters the opening through a plurality of gas inlet holes, the auxiliary gas in the opening is horizontally deflected and diffused to enter the gap between the driving plate and the base plate, part of the auxiliary gas enters the reaction chamber from the tooth grooves of the driving plate, and the other part of the auxiliary gas passes through the bottom of the planetary plate and enters the reaction chamber from the tooth grooves of the planetary plate.
10. A chemical vapor deposition planetary tray apparatus according to claim 9, wherein the gas inlet means directly above the driving disk vertically injects a reaction gas into the reaction chamber when the auxiliary gas enters the reaction chamber, and the reaction gas is diffused toward the plurality of planetary disk surfaces in a radial direction of the driving disk.
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CN201921592172.7U CN211471545U (en) | 2019-09-20 | 2019-09-20 | Chemical vapor deposition planet tray device |
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CN201921592172.7U CN211471545U (en) | 2019-09-20 | 2019-09-20 | Chemical vapor deposition planet tray device |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110512192A (en) * | 2019-09-20 | 2019-11-29 | 深圳第三代半导体研究院 | A kind of chemical vapor deposition planet pallet device and air inlet method |
CN112080735A (en) * | 2020-10-12 | 2020-12-15 | 佛仪科技(佛山)有限公司 | Tray device for vapor chemical deposition |
-
2019
- 2019-09-20 CN CN201921592172.7U patent/CN211471545U/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110512192A (en) * | 2019-09-20 | 2019-11-29 | 深圳第三代半导体研究院 | A kind of chemical vapor deposition planet pallet device and air inlet method |
CN112080735A (en) * | 2020-10-12 | 2020-12-15 | 佛仪科技(佛山)有限公司 | Tray device for vapor chemical deposition |
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