CN211455717U

CN211455717U - Light emitting diode with ternary compound reflection structure

Info

Publication number: CN211455717U
Application number: CN201921797826.XU
Authority: CN
Inventors: 江泓逸; 庄渊州; 张煌明; 王俊凯; 蔡宗晏; 李俊仪; 陈永升; 潘泓任; 薛旭宏; 王谨铭; 杨志民
Original assignee: Guangchi Technology Co ltd
Current assignee: Guangchi Technology Co ltd
Priority date: 2019-02-21
Filing date: 2019-10-24
Publication date: 2020-09-08
Anticipated expiration: 2029-10-24
Also published as: TWM586879U

Abstract

The utility model provides a light emitting diode with ternary compound reflecting structure, include and be provided with a N type semiconductor layer, a multiple quantum well, a P type semiconductor layer and a current diffusion layer according to the preface stromatolite on a transparent substrate, be equipped with a N type electrode on this N type semiconductor layer, be equipped with a P type electrode on this P type semiconductor layer, locate a current barrier layer between this current diffusion layer and this N type semiconductor layer to be located under this P type electrode and one side of this multiple quantum well, in this transparent substrateThe bottom surface of the substrate is provided with a Bragg reflection layer, which is composed of a plurality of NbTiO layers stacked in pairs_X/SIO₂A stack of compounds; therefore, the total reflectivity of the LED can be greatly increased to achieve the effect of increasing the brightness of the light and saving the power.

Description

Light emitting diode with ternary compound reflection structure

Technical Field

The present invention relates to the technical field of light emitting diode structure, and more particularly to a light emitting diode with ternary compound reflective structure, which can greatly increase the total reflectivity of the light emitting diode to achieve the effects of increasing the brightness and saving the power.

Background

The structure of the early LED, as shown in FIG. 1, is mainly composed of a transparent substrate 10, an N-type semiconductor layer 11, a multiple quantum well 12, a P-type semiconductor layer 13, a current diffusion layer 14, an N-type electrode 15, a P-type electrode 16 and a current blocking layer 17, wherein the N-type semiconductor layer 11 is stacked on the transparent substrate 10, the multiple quantum wells 12 are stacked on the N-type semiconductor layer 11, the P-type semiconductor layer 13 is stacked on the multiple quantum well 12, the current diffusion layer 14 is stacked on the P-type semiconductor layer 14, the N-type electrode 15 is disposed on the N-type semiconductor layer 11, the P-type electrode 16 is disposed on the P-type semiconductor layer 13, the current blocking layer 17 is disposed between the current diffusion layer 14 and the N-type semiconductor layer 11, and is located right below the P-type electrode 16 and on one side of the multiple quantum well 12. When the LED emits light, most of the light is transmitted through the transparent substrate 10, so that the light is dissipated greatly, and the brightness of the LED is reduced.

In view of the above, the applicant of the present invention has conceived and devised the present application by studying and improving the above problems.

SUMMERY OF THE UTILITY MODEL

The present application mainly aims to solve the problem that the conventional LED structure has a large amount of light dissipation phenomenon, which leads to the decrease of the brightness of the LED during use.

The light emitting diode with the ternary compound reflection structure comprises a transparent substrate, an N-type semiconductor layer, a multiple quantum well, a P-type semiconductor layer, a current diffusion layer, an N-type electrode, a P-type electrode, a current barrier layer and a Bragg reflection layer. Wherein the N-type semiconductor layer is stacked on the transparent substrate. The multiple quantum wells are stacked on the N-type semiconductor layer. The P-type semiconductor layer is stacked on the multiple quantum wells. The current diffusion layer is laminated on the P-type semiconductor layer. The N-type electrode is arranged on the N-type semiconductor layer. The N-type electrode is arranged on the N-type semiconductor layer. The current barrier layer is arranged between the current diffusion layer and the N-shaped semiconductor layer and is positioned right below the P-type electrode and on one side of the multiple quantum wells. The Bragg reflection layer is formed by laminating a plurality of NbTiO layers in pairs_X/SIO₂A film stack of a compound, the NbTiO_XThe ternary compound is a new application ternary compound, has a large adjustable range of n/k value, and is not easy to have the phenomenon of atomization after film coating.

The light emitting diode with ternary compound reflection structure provided by the application can pass through the Bragg reflection layer and is formed by laminating a plurality of NbTiO layers in pairs_X/SIO₂The design of the membrane stack composed of the ternary and binary compounds makes it possible to utilize the NbTiO not only_XThe adjustable range of the N/k value is large, and particularly the characteristic of adjustable N value enables the N/k value to have more freedom degree in the adjustment of the process, so that the reflectivity of the N/k value can be improved. And, the NbTiO_X/SIO₂The Bragg reflection layer is less prone to form columnar crystals and thus is less prone to fogging, so that the NbTiO layer_XNot only has NbO_XLow absorption coefficient, especially TiO_XThe advantage of uneasy atomization is to further make the total reflectivity of the LED reach 98%, and further increase the brightness by 1.13% compared with the conventional one, and relatively save the power by 1.13%. The light emitting diode of the present application has better limitation in the visible light range of 400nm to 700nm without entering of other bands of stray light by the action of the Bragg reflection layer with the ternary compound, so that the light emission can be more concentrated. In addition, the light emitting diode can have a better divergence angle (large angle incidence can also be used), and further the illumination range is wider.

Drawings

FIG. 1 is a schematic diagram of an early LED structure.

Fig. 2 is a schematic structural diagram of a light emitting diode according to the present application.

FIG. 3 shows a composition of NbTiO in the present application_X/SIO₂The film stack forms the spectrum chart of the light emitting diode of the Bragg reflection layer;

FIG. 4 is a schematic diagram of a light emitting diode structure and light reflection according to the present application.

Detailed Description

Referring to fig. 2 and 3, it is shown that the light emitting diode with ternary compound reflective structure according to the present application includes a transparent substrate 20, an N-type semiconductor layer 21, a multiple quantum well 22, a P-type semiconductor layer 23, a current diffusion layer 24, an N-type electrode 25, a P-type electrode 26, a current blocking layer 27 and a bragg reflective layer 28, wherein:

the N-type semiconductor layer 21(N-Gan) is stacked on the transparent substrate 20 for providing electrons.

The Multiple Quantum wells 22 (MQW) stacked on the N-type semiconductor layer 21 can make electrons and holes more easily confined together and thus increase the light emission intensity.

The P-type semiconductor layer 23(P-Gan) is stacked on the multiple quantum well 22 for providing holes.

The current diffusion layer 24 is a transparent conductive layer stacked on the P-type semiconductor layer 23, and is made of ITO (Indium Tin Oxides, abbreviated as ITO) which is a transparent conductive semiconductor film capable of rapidly and uniformly diffusing and distributing current to increase the activity of electrons.

The N-type electrode 25 is disposed on the N-type semiconductor layer 21.

The P-type electrode 26 is disposed on the P-type semiconductor layer 23.

The Current blocking Layer 27 (CBL) is made of SiO₂And it is set between the current diffusion layer 24 and the N-shaped semiconductor layer 21, and is located under the P-type electrode 26 and at one side of the multiple quantum well 22, so that the current will not flow into the multiple quantum well 22 from under the P-type electrode 26, and the current is forced to diffuse toward the current diffusion layer 24, so that the electrons can be recombined to generate photons under the transparent region.

The Bragg Reflector 28 (DBR) is disposed on the bottom surface of the transparent substrate 20 and is formed by laminating a plurality of NbTiO layers in pairs_X/SIO₂A stack of equal ternary and binary compounds, the NbTiO_XIs a new application of ternary compound, the n/k value of which has a much wider adjustable range than that of the conventional binary compound, the NbTiO_XThe n/k value of (A) can be adjusted by changing the ratio of Nb to Ti, n is the optical index (refractive index), k is the extinction coefficient (extinction coefficient), and the ratio of Nb to Ti can be changed by the process method.

The above-mentioned NbTiO_XIs made of TiO₂And Nb₂O₅Wherein when TiO is used₂And Nb₂O₅The ratio of (A) to (B) is 9: 1, measured at a wavelength of 550nm, 2.36<n<2.40，k<5 e-3; when TiO is present₂And Nb₂O₅The ratio of (A) to (B) is 7: 3, measuring the wavelength at 550nm, 2.36<n<2.40，k<5 e-4; when TiO is present₂And Nb₂O₅The ratio of (A) to (B) is 5: 5, measuring the wavelength at 550nm, 2.40<n<2.43，k<5 e-7; when TiO is present₂And Nb₂O₅In a ratio of 3: 7, measured at a wavelength of 550nm, 2.36<n<2.39，k<5 e-4; when TiO is present₂And Nb₂O₅In a ratio of 1: 9, measured at a wavelength of 550nm, 2.30<n<2.35，k<5e-5。

The light emitting diode with ternary compound reflective structure provided by the present application can be formed by stacking plural NbTiO layers in pairs via the Bragg reflective layer 28_X/SIO₂The design of the membrane stack composed of the ternary and binary compounds makes it possible to utilize the NbTiO not only_XThe adjustable range of the N/k value is large, especially the adjustable characteristic of the N value, so that the adjustable range has more freedom in the adjustment of the process, the reflectivity can be improved, and the NbTiO has good optical property and good optical property_X/SIO₂The Bragg reflector 28 is less likely to form columnar crystals and is less likely to be atomized, so that the NbTiO layer_XNot only has NbO_XLow absorption coefficient, especially TiO_XThe advantage of uneasy atomization is to further make the total reflectivity of the LED reach 98%, and further increase the brightness by 1.13% compared with the conventional one, and relatively save the power by 1.13%. Moreover, the light emitting diode of the present application can be better limited in the visible light range of 400nm to 700nm without the entrance of other bands of stray light by the action of the Bragg reflection layer 28 with the ternary compound, so that the light emission can be more concentrated. In addition, the light emitting diode can have a better divergence angle (large angle incidence can also be used), and further the illumination range is wider. Please refer to NbTiO of FIG. 4_X/SIO₂The film stack forms the spectral diagram of the light emitting diode of the bragg reflector layer 28.

In summary, since the present application has the advantages and practical value, and similar products are not published in the same kind of products, the application requirements of the new patent are met, and the application is proposed according to the patent law.

[ notation ] to show

[ Prior Art ]

10 transparent substrate 11N-type semiconductor layer

12 multiple quantum well 13P-type semiconductor layer

14 current diffusion layer 15N type electrode

16P type electrode

[ present application ]

20 transparent substrate 21N type semiconductor layer

22 multiple quantum well 23P-type semiconductor layer

24 current diffusion layer 25N type electrode

26P-type electrode 27 current blocking layer

28 Bragg reflection layer

Claims

1. A light emitting diode with a ternary compound reflective structure, comprising:

a transparent substrate;

an N-type semiconductor layer laminated on the transparent substrate;

a multiple quantum well stacked on the N-type semiconductor layer;

a P-type semiconductor layer stacked on the multiple quantum wells;

a current diffusion layer laminated on the P-type semiconductor layer;

the N-type electrode is arranged on the N-type semiconductor layer;

the P-type electrode is arranged on the P-type semiconductor layer;

the current barrier layer is arranged between the current diffusion layer and the N-type semiconductor layer and is positioned right below the P-type electrode and on one side of the multiple quantum wells; and

a Bragg reflection layer arranged on the bottom surface of the transparent substrate and formed by laminating a plurality of NbTiO layers in pairs_X/SIO₂A film stack of compounds, said NbTiO_XIs a new ternary compound.

2. The light-emitting diode with ternary compound reflective structure as claimed in claim 1, wherein the current diffusion layer is a transparent conductive layer made of ITO.

3. The light-emitting diode with ternary compound reflective structure as claimed in claim 2, wherein the material of the current blocking layer is SiO₂。