CN211405979U - Power amplifying circuit - Google Patents
Power amplifying circuit Download PDFInfo
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- CN211405979U CN211405979U CN202020318468.6U CN202020318468U CN211405979U CN 211405979 U CN211405979 U CN 211405979U CN 202020318468 U CN202020318468 U CN 202020318468U CN 211405979 U CN211405979 U CN 211405979U
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- 230000003321 amplification Effects 0.000 claims abstract description 32
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 32
- 230000003068 static effect Effects 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims description 10
- 230000006641 stabilisation Effects 0.000 abstract description 3
- 238000011105 stabilization Methods 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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Abstract
The utility model discloses a power amplification circuit, including N power amplification unit, every power amplification unit all includes radio frequency amplifier and biasing circuit, biasing circuit includes first resistance, the second resistance, the third resistance, the fourth resistance, first triode, the second triode, the third triode and electric capacity, the collecting electrode of first triode of outside voltage input and second triode, the projecting pole of first triode is connected with radio frequency amplifier's input, the base of first triode, the base of second triode, the collecting electrode of third triode, the one end of first resistance and electric capacity is all connected together; the other external voltage is input into the first resistor; the emitter of the second triode is connected with a third resistor, and the third resistor, the base of the third triode and a fourth resistor are connected together; and an emitting electrode of the third triode is connected with one end of the second resistor. The utility model discloses a power amplification circuit can stabilize quiescent operating current under the different temperature condition, stabilizes the radio frequency signal gain, has improved the job stabilization nature of product under different temperature conditions.
Description
Technical Field
The utility model relates to a radio frequency microwave technical field, the power amplification circuit that more specifically relates to.
Background
A typical power amplifier circuit is shown in fig. 1, and the circuit is a 3-stage power amplifier structure, and the Bias circuits (Bias1, Bias2, Bias3) of each stage provide static current for circuit operation and compensation current for the circuit under the condition of input power variation. During the operation of the power amplifier (PA1, PA2, PA3), the quiescent operating point of the stabilizing circuit is the key to the normal operation of the circuit, which requires the quiescent current of the circuit to be maintained constant under different temperature conditions. However, in the circuit structure shown in fig. 1, under the condition of temperature change, the static current change of the circuit cannot be improved, so that the static current of the circuit increases with the increase of temperature, and the temperature stability and the gain stability of the circuit are seriously affected, so a new circuit structure with an adjustable temperature coefficient is needed to improve the stability of the circuit.
One improvement commonly adopted at present is to implement temperature compensation by adding a temperature compensation structure in a circuit, such as the structure shown in fig. 2, a Bias circuit (Bias1, Bias2, Bias3) of the circuit structure implements temperature compensation by adding a temperature compensation circuit, but the quiescent current of the circuit structure also increases with the increase of the ambient temperature, and the function of temperature coefficient adjustment cannot be implemented.
In the first scheme, as the ambient temperature rises, because the transistor has the characteristics that the current increases and the Vbe voltage (voltage between the base and the emitter) of the transistor decreases as the ambient temperature rises, the current Ib11 flowing through the transistor Tb11 increases rapidly without the temperature compensation circuit composed of the transistor Tb12 and the transistor Tb13, which results in a drastic increase in the quiescent current of the first-stage power amplifier PA1 (as shown in fig. 1); in the second scheme, after the transistor Tb12 and the transistor Tb13 are added (as shown in fig. 2), due to the rise of the ambient temperature, the voltages of Vbe12 and Vbe13 of the transistors Tb12 and Tb13 drop, and the voltage VA at the node VA becomes Vbe13+ Vbe12, so that the voltage at the node VA drops with the rise of the ambient temperature, which causes the base voltage of the transistor Tb1 to drop with the rise of the temperature, thereby suppressing the increase of the current of Ib11 with the rise of the temperature, but not completely changing the result of the increase of the static current of the circuit with the rise of the temperature
The temperature stability of the circuit is an important index for measuring the quality of the circuit, and for a power amplifier, the stability of a static operating point at different temperatures can effectively improve the gain and output power performance of the circuit, for example, as shown in fig. 2, a power amplification circuit with a temperature compensation structure is added, although the change of the quiescent current of the power amplification circuit at different temperatures can be stabilized, in the working process of the circuit, the quiescent current of the circuit can be increased along with the rise of the ambient temperature, the stability of the temperature and the gain stability of the circuit can also be caused, the working state and the output power of the circuit are finally affected, and the temperature coefficient of the circuit cannot be adjusted.
Therefore, there is a need for an improved temperature coefficient adjustable power amplifier to achieve quiescent current of various temperature coefficients, stabilize the operating state of the circuit and the gain flatness of the circuit.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a power amplification circuit, the utility model discloses a power amplification circuit can stabilize quiescent operating current under the different temperature condition, stabilizes the radio frequency signal gain, has improved the job stabilization nature of product under different temperature conditions.
In order to achieve the above object, the present invention provides a power amplifying circuit, which includes N-level power amplifying units, wherein the N-level power amplifying units are sequentially connected, and each level of power amplifying unit has identical structural features, wherein N is a natural number greater than or equal to 2; each stage of power amplification unit comprises a radio frequency amplifier and a bias circuit, the bias circuit is connected with the input end of the radio frequency amplifier to provide static working current for the radio frequency amplifier, the bias circuit comprises a first resistor, a second resistor, a third resistor, a fourth resistor, a first triode, a second triode, a third triode and a capacitor, an external voltage is input into the collector electrodes of the first triode and the second triode, the emitter electrode of the first triode is connected with the input end of the radio frequency amplifier, and the base electrode of the first triode, the base electrode of the second triode, the collector electrode of the third triode, one end of the first resistor and one end of the capacitor are all connected together; the other external voltage is input into the other end of the first resistor, and the other end of the capacitor is grounded; an emitting electrode of the second triode is connected with one end of the third resistor, the other end of the third resistor, a base electrode of the third triode and one end of the fourth resistor are all connected together, and the other end of the fourth resistor is grounded; and an emitting electrode of the third triode is connected with one end of a second resistor, and the other end of the second resistor is grounded.
Preferably, the bias circuit further includes an inductor, one end of the inductor is connected to the emitter of the first triode, and the other end of the inductor is connected to the input end of the radio frequency amplifier.
Preferably, the second resistor is used for adjusting the quiescent current of the power amplifier to be a positive temperature coefficient.
Preferably, the third resistor is used for adjusting the quiescent current of the power amplifier to be a negative temperature coefficient.
Compared with the prior art, the utility model discloses a power amplification circuit, owing to set up second resistance and third resistance in addition in biasing circuit for only through the resistance value that changes second resistance and third resistance among the biasing circuit, just can accomplish the adjustment to the quiescent current temperature coefficient at different levels of circuit, realize the quiescent current of various temperature coefficients, stabilizing circuit's operating condition and the gain flatness of circuit realize the normal work of circuit, guaranteed the steady operation of circuit under different temperature coefficients.
The invention will become more apparent from the following description when taken in conjunction with the accompanying drawings which illustrate embodiments of the invention.
Drawings
Fig. 1 is a block diagram of a power amplifier circuit of the prior art.
Fig. 2 is a block diagram of another power amplifying circuit of the prior art.
Fig. 3 is a structural diagram of an embodiment of the power amplifier circuit of the present invention. Fig. 4 is a graph of quiescent current at different temperature coefficients for the first stage amplification unit of the power amplifier of fig. 3.
Detailed Description
Embodiments of the present invention will now be described with reference to the drawings, wherein like element numerals represent like elements throughout. As described above, the utility model provides a power amplification circuit, the utility model discloses a power amplification circuit can stabilize quiescent operating current under the different temperature condition, stabilizes the radio frequency signal gain, has improved the job stabilization nature of product under different temperature conditions.
The utility model discloses a power amplification circuit includes N level power amplification unit, and N level power amplification unit connects gradually in proper order, and every level power amplification unit has identical structural feature, and wherein N is more than or equal to 2's natural number. Referring to fig. 3, fig. 3 is a structural diagram of an embodiment of the power amplifying circuit of the present invention, and as shown in the figure, the number of stages of the power amplifying unit in the embodiment is 3, but in practical applications, the number is not limited to this. Since each stage of power amplification unit has the same structural features, only the 1 st stage of power amplification unit is described here, and the description of other power amplification units is omitted.
Specifically, the 1 st stage power amplifying unit comprises a radio frequency amplifier PA1 and a Bias circuit Bias1, wherein the Bias circuit Bias1 is connected with an input end of the radio frequency amplifier PA1 to provide a static operating current for the radio frequency amplifier PA 1. The Bias circuit Bias1 includes a first resistor R11, a second resistor R12, a third resistor R13, a fourth resistor R14, a first triode Tb11, a second triode Tb12, a third triode Tb13 and a capacitor C11, an external voltage Vccb is inputted to the collectors of the first triode Tb13 and the second triode Tb12, the emitter of the first triode Tb11 is connected to the input terminal of the rf amplifier PA1, the base of the first triode Tb11, the base of the second triode Tb12, the collector of the third triode Tb13, one end of the first resistor R11 and one end of the capacitor C11 are all connected together; an external other voltage Vctr11 is input into the other end of the first resistor R11, and the other end of the capacitor C11 is grounded; an emitter of the second triode Tb12 is connected with one end of the third resistor R13, the other end of the third resistor R13, a base of the third triode Tb13 and one end of the fourth resistor R14 are all connected together, and the other end of the fourth resistor R14 is grounded; an emitter of the third triode Tb1 is connected with one end of a second resistor R12, and the other end of the second resistor R12 is grounded.
As a preferred embodiment of the present invention, the Bias circuit Bias1 further includes an inductor L11, one end of the inductor L11 is connected to the emitter of the first transistor Tb11, and the other end of the inductor L11 is connected to the input terminal of the rf amplifier PA 1. As is well known, the RF signal rfin flows into the bias circuit, then flows into the power amplification unit after being rectified, and the compensation effect is reduced because the resistors cause loss of the RF signal during the process that the RF signal rfin flows into the bias circuit and loss occurs after being rectified and flowing into the power amplification unit. In the present invention, the inductor L11 is provided, so that loss is generated only when the RF signal RF in flows into the Bias circuit Bias1, and no influence is generated when the RF signal RF in flows into the power amplification unit PA1 after being rectified; therefore, the compensation effect of the Bias circuit Bias1 is improved.
As another preferred embodiment of the present invention, the second resistor R12 is used to adjust the quiescent current of the power amplifier to be a positive temperature coefficient; and the third resistor R13 is used to adjust the quiescent current of the power amplifier to a negative temperature coefficient. Therefore, the static current of the whole circuit can be flexibly adjusted through the adjustment characteristics of the second resistor R12 and the third resistor R13 to the static current respectively, and the working stability of the product under different temperature conditions is ensured.
Please refer to fig. 3 in combination to describe the working principle of the 1 st stage power amplifying unit of the present invention. When the 1 st-stage power amplification unit works, due to the action of external voltages Vctrl1 and Vccb, the first triode Tb11, the second triode Tb12 and the third triode Tb13 are all in an open state, and a static circuit is provided for the radio frequency amplifier PA 1; when the whole circuit normally works, as the radio frequency signal RF in increases, the linearity of the radio frequency amplifier PA is gradually reduced along with the change of the working state of the triode, an additional compensation current is required to be provided by the biasing circuit Bais1 to improve the linearity of the circuit, due to the first triode Tb11 and the capacitor C11, the radio frequency signal RF in flows into the biasing circuit Bais1 through the inductor L11, then due to the rectifying effect of the first triode Tb11, the rectified radio frequency signal is converted into a direct current signal and flows into the radio frequency amplifier PA1, compensation is provided for the radio frequency amplifier PA, and the linearity of the circuit is improved. In the process, the voltage at the node VA is VA ═ Vbe13+ Ib12 × R13+ Vbe12, and since Ib12 ═ Vbe13/R14, the current of Ib12 decreases with the increase of the temperature, so that the voltage at the circuit VA decreases more obviously with the increase of the temperature, the increase degree of the current of Ib11 with the increase of the temperature is further suppressed, and finally the static current of the whole 1 st stage power amplification unit is unchanged or decreases with the increase of the temperature; that is, the third resistor R13 can be used to adjust the quiescent current of the power amplifier to a negative temperature coefficient, and particularly, the resistance of the third resistor R13 can be flexibly set. Furthermore, the voltage at the node VA may also be VA ═ Ib13 × R12+ Vbe13+ Ib12 × R13+ Vbe12, and as can be seen from the above, the voltage at the node VA decreases with increasing temperature, and VA ═ Vctrl1-Ib13 — R11, so the current of the current Ib13 increases with increasing temperature, that is, the second resistor R12 may be used to adjust the quiescent current of the power amplifier to a positive temperature coefficient. Therefore, the change rate of the voltage at the node VA is affected by the resistance of the second resistor R12 and the third resistor R13, the increase of the second resistor R12 decreases the decrease of the voltage at the node VA with the temperature increase, and the increase of the third resistor R13 increases the decrease of the voltage at the node VA with the temperature increase, so that under the condition of ensuring the static current, the resistance of the third resistor R13 is usually increased by about 60-100 ohms, the resistance of the second resistor R12 is decreased by about 160-250 ohms, and the temperature coefficient can be converted from the positive temperature coefficient to the negative temperature coefficient.
Next, please refer to fig. 4 in combination, fig. 4 is a graph of quiescent current curves of the first stage amplifying unit of the rate amplifier of the present invention at different temperature coefficients. From the simulation result shown in fig. 4, it can be known that, by adopting the power amplifier circuit of the present invention, the adjustment of the quiescent current temperature coefficient of each stage of the circuit can be completed only by changing the resistance value in the bias circuit Bais1, thereby realizing the quiescent current of various temperature coefficients, stabilizing the working state of the circuit and the gain flatness of the circuit, and realizing the normal operation of the circuit.
The present invention has been described above with reference to the preferred embodiments, but the present invention is not limited to the above-disclosed embodiments, and various modifications, equivalent combinations, which are made according to the essence of the present invention, should be covered.
Claims (2)
1. A power amplification circuit comprises N-level power amplification units, wherein the N-level power amplification units are sequentially connected, and each level of power amplification unit has the same structural characteristics, wherein N is a natural number greater than or equal to 2; each stage of power amplification unit comprises a radio frequency amplifier and a bias circuit, the bias circuit is connected with the input end of the radio frequency amplifier to provide static working current for the radio frequency amplifier, and the power amplification unit is characterized in that the bias circuit comprises a first resistor, a second resistor, a third resistor, a fourth resistor, a first triode, a second triode, a third triode and a capacitor, an external voltage is input into the collector electrodes of the first triode and the second triode, the emitter electrode of the first triode is connected with the input end of the radio frequency amplifier, and the base electrode of the first triode, the base electrode of the second triode, the collector electrode of the third triode, one end of the first resistor and one end of the capacitor are all connected together; the other external voltage is input into the other end of the first resistor, and the other end of the capacitor is grounded; an emitting electrode of the second triode is connected with one end of the third resistor, the other end of the third resistor, a base electrode of the third triode and one end of the fourth resistor are all connected together, and the other end of the fourth resistor is grounded; and an emitting electrode of the third triode is connected with one end of a second resistor, and the other end of the second resistor is grounded.
2. The power amplifier circuit as claimed in claim 1, wherein the bias circuit further comprises an inductor, one end of the inductor is connected to the emitter of the first transistor, and the other end of the inductor is connected to the input terminal of the rf amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020318468.6U CN211405979U (en) | 2020-03-13 | 2020-03-13 | Power amplifying circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020318468.6U CN211405979U (en) | 2020-03-13 | 2020-03-13 | Power amplifying circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211405979U true CN211405979U (en) | 2020-09-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020318468.6U Expired - Fee Related CN211405979U (en) | 2020-03-13 | 2020-03-13 | Power amplifying circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211405979U (en) |
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2020
- 2020-03-13 CN CN202020318468.6U patent/CN211405979U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220826 Address after: Unit 709, 7th Floor, Building E, Xiamen Center, No. 567 Haicang Avenue, Haicang District, Xiamen City, Fujian Province 361026 Patentee after: Xiamen Hexin Semiconductor Co.,Ltd. Address before: 9 / F, block a, 33 Jitai Road, high tech Zone, Chengdu, Sichuan 610041 Patentee before: IPGoal Microelectronics (Sichuan) Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200901 |
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| CF01 | Termination of patent right due to non-payment of annual fee |