CN211320281U - Dynamic adjustable graphene attenuator based on equivalent surface plasmons - Google Patents
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- CN211320281U CN211320281U CN201922282336.2U CN201922282336U CN211320281U CN 211320281 U CN211320281 U CN 211320281U CN 201922282336 U CN201922282336 U CN 201922282336U CN 211320281 U CN211320281 U CN 211320281U
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 100
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 95
- 239000000758 substrate Substances 0.000 claims abstract description 107
- 239000002184 metal Substances 0.000 claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 claims abstract description 71
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 230000007704 transition Effects 0.000 claims abstract description 22
- 230000008054 signal transmission Effects 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims description 55
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 11
- 239000004800 polyvinyl chloride Substances 0.000 claims description 11
- 239000002356 single layer Substances 0.000 claims description 8
- 230000009466 transformation Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000002608 ionic liquid Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 238000011161 development Methods 0.000 abstract description 6
- 230000018109 developmental process Effects 0.000 abstract description 6
- 229910002804 graphite Inorganic materials 0.000 abstract description 6
- 239000010439 graphite Substances 0.000 abstract description 6
- -1 graphite alkene Chemical class 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract description 5
- 239000003792 electrolyte Substances 0.000 abstract 1
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
The utility model discloses a dynamic adjustable graphene attenuator based on equivalent surface plasmon, which belongs to the technical field of microwave devices, and comprises a multilayer substrate integrated waveguide, a microstrip line signal conversion transition part and a microstrip line signal transmission part which are symmetrically arranged at two sides of the waveguide, wherein the microstrip line signal conversion transition part is connected with the integrated waveguide transmission part; the metal wires are periodically arranged on the interface of two dielectric substrates with different dielectric constants in the multilayer substrate, and a graphene sandwich structure is arranged right above the metal wires and parallel to the interface. The utility model discloses utilize the conductivity characteristic of electrolyte regulation and control graphite alkene, realized the dynamic regulation and control of effective plasmon attenuation, easily plane integration can control the decrement through the impressed voltage who adjusts graphite alkene, has good application prospect in device and the circuit miniaturized, highly integrated and can real-time developments regulate and control, has opened new application prospect for equivalent plasmon device simultaneously.
Description
Technical Field
The utility model belongs to the technical field of the microwave device, a adjustable graphene attenuator of developments based on equivalent surface plasmon is related to.
Background
In order to pursue and optimize the functions of small volume, multi-scenario application and strong anti-interference of communication electronic products, people have deeply studied and developed in the aspects of miniaturization, high integration, dynamic adjustment and the like of microwave devices in recent years, and in order to meet the application requirements and engineering technical requirements, the highly integrated and anti-interference dynamically adjustable microwave device has important significance.
The surface plasmon is a special electromagnetic wave propagating along the interface of two dielectric substrates with opposite relative dielectric constants, and has remarkable field local characteristics and field enhancement characteristics, while the effective surface plasmon is generated by generating different effective dielectric constants through the dielectric substrate with proper size in the waveguide and has the characteristics of surface plasmon.
In an electronic communication system, an attenuator is an indispensable part, and plays a role in controlling the signal size and the impedance change in a buffer circuit to realize impedance matching. Meanwhile, in recent years, graphene receives wide attention due to its special electronic and optical properties, and graphene-based microwave devices are reported in some documents, in which a majority of the attenuators are occupied by graphene-based attenuators, and since graphene has a characteristic that the conductivity can be adjusted by voltage, the dynamically adjustable attenuators can be realized based on graphene, and planar integration of microwave devices is facilitated.
SUMMERY OF THE UTILITY MODEL
Utility model purpose: in order to solve the problem that prior art exists, the utility model provides an adjustable graphite alkene attenuator of developments based on equivalent surface plasmon, it has the advantage that structural design is simple, easily plane integration and miniaturization to can change the conductivity of graphite alkene through adjusting external voltage, thereby realize the dynamic regulation and control of the decay of equivalent surface plasmon.
The technical scheme is as follows: in order to realize the purpose of the utility model, the utility model adopts the following technical scheme:
the dynamic adjustable graphene attenuator based on the equivalent surface plasmons comprises equivalent surface plasmon waveguides, wherein two sides of each equivalent surface plasmon waveguide are respectively connected with one end of a microstrip line signal conversion transition part which is symmetrically arranged, and the other end of each microstrip line signal conversion transition part is respectively connected with a microstrip line signal transmission part which is symmetrically arranged; the metal wires which are arranged in an equal period and have the width of the waveguide width and the hollow part of the dielectric substrate are sequentially arranged in the dielectric layer of the equivalent surface plasmon waveguide from top to bottom; wherein the metal wire is covered with a graphene sandwich structure.
Furthermore, the microstrip line signal transmission part, the microstrip line signal conversion transition part and the equivalent surface plasmon waveguide respectively comprise a top metal guide belt layer, a dielectric layer and a bottom fully-covered metal layer which are sequentially overlapped.
Furthermore, the top metal conduction band layer comprises a rectangular metal conduction band arranged on the microstrip line signal transmission part, a trapezoidal metal conduction band arranged on the microstrip line signal conversion transition part and a full-coverage metal ground arranged on the equivalent surface plasmon integrated waveguide.
Further, the dielectric layer comprises a first dielectric substrate, a second dielectric substrate and a middle hollowed dielectric substrate which are sequentially overlapped, wherein the hollowed part of the dielectric substrate arranged on the middle hollowed dielectric substrate is positioned in the equivalent surface plasmon waveguide.
Furthermore, the metalized via holes are periodically arranged on two sides of the dielectric layer and the range of arrangement covers the equivalent surface plasmon waveguide; the graphene sandwich structure is arranged between the first dielectric substrate and the second dielectric substrate; the metal wires are arranged periodically and have the width of waveguide width, the metal wires are arranged between the second dielectric substrate and the dielectric substrate with the hollow middle part, and the range covered by the metal wires is the hollow part of the dielectric substrate.
Furthermore, the graphene sandwich structure comprises rectangular graphene and L-shaped graphene, wherein the rectangular graphene and the L-shaped graphene are connected with each other and are used for external feeding; the rectangular graphene is arranged in the equivalent surface plasmon waveguide and is positioned right above the hollowed part of the dielectric substrate; the L-shaped graphene is arranged in the microstrip line signal conversion transition part.
Furthermore, the thicknesses of the first dielectric substrate, the second dielectric substrate and the middle hollowed dielectric substrate and the width of the hollowed part of the dielectric substrate are calculated by the effective dielectric constant of the medium and the Maxwell electromagnetic equation.
Further, modeling and optimizing the designed model by using commercial software CST to obtain the period, the diameter and the height of the metalized through holes with equal periods on two sides of the substrate integrated waveguide part; the width linear transformation range and the length of the metal conduction band with the linearly reduced width; length and width of graphene sandwich, sheet resistance value.
Furthermore, the first dielectric substrate, the second dielectric substrate and the dielectric substrate with the hollowed middle are made of Rogers RO4350B material with the relative dielectric constant of 3.48, and the top metal conducting strip layer and the bottom full-covering metal layer are both made of copper.
Furthermore, the graphene sandwich structure comprises a layer of diaphragm paper soaked with ionic liquid, polyvinyl chloride layers are symmetrically arranged on the upper surface and the lower surface of the diaphragm paper, single-layer graphene is arranged between each polyvinyl chloride layer and the diaphragm paper, and the single-layer graphene is transferred to the polyvinyl chloride layers.
Has the advantages that: compared with the prior art, the utility model discloses an adjustable graphite alkene attenuator of developments based on equivalent surface plasmon, this attenuator utilize the conductivity of voltage control graphite alkene to realize the adjustable function of equivalent surface plasmon attenuation developments, have lower return loss, not only structural design is simple, and easy plane integration is applicable to the miniaturization of microwave device and circuit, highly integrated and the adjustable demand of developments, possesses fine engineering application prospect moreover.
Drawings
FIG. 1 is a cross-sectional view of a dynamically adjustable graphene attenuator based on equivalent surface plasmons;
FIG. 2 is a top view of a dynamically adjustable graphene attenuator based on equivalent surface plasmons;
FIG. 3 is a graphene placement diagram of a dynamic adjustable graphene attenuator based on equivalent surface plasmons;
FIG. 4 is a diagram of a dielectric substrate and a wire placement for a dynamic adjustable graphene attenuator based on equivalent surface plasmons;
FIG. 5 is a schematic of a graphene sandwich structure;
fig. 6 is a change curve of S21 with the sheet resistance of graphene at 5.5GHz of the dynamically adjustable attenuation transmission device of the embodiment;
the reference signs are: the device comprises a 1-microstrip line signal transmission part, a 2-microstrip line signal conversion transition part, a 3-equivalent surface plasmon integrated waveguide, a 4-graphene sandwich structure, a 5-metalized via hole, a 6-metal wire, a 7-medium substrate hollowed part, an 8-rectangular metal conduction band, a 9-trapezoidal metal conduction band, a 10-full coverage metal ground, an 11-second medium substrate, a 12-L type graphene, a 13-rectangular graphene, a 14-single-layer graphene, a 15-diaphragm paper, a 16-polyvinyl chloride layer, a 17-top metal conduction band layer, an 18-first medium substrate, a 19-middle hollowed medium substrate and a 20-bottom full coverage metal layer.
Detailed Description
The structure and performance of the present invention will be further explained with reference to the accompanying drawings. It is understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention, and that modifications to various equivalent forms of the present invention will occur to those skilled in the art upon reading the present disclosure and are intended to be included within the scope of the appended claims.
As shown in fig. 1, the dynamic adjustable graphene attenuator based on the equivalent surface plasmon sequentially includes a microstrip line signal transmission portion 1, a microstrip line signal conversion transition portion 2, an equivalent surface plasmon waveguide 3, a microstrip line signal conversion transition portion 2, and a microstrip line signal transmission portion 1 from left to right, the microstrip line signal transmission portion 1 is located at two ends of the dynamic adjustable graphene attenuator and respectively serves as an input end and an output end, the microstrip line signal transmission portion 1 at the input end and the output end is used for feeding and extracting signals, the microstrip line signal conversion transition portion 2 is used for realizing mutual conversion between a microstrip line transmission signal and a substrate integrated waveguide signal, and the equivalent surface plasmon waveguide 3 is used for transmitting an equivalent surface plasmon wave.
The dynamic adjustable graphene attenuator based on the equivalent surface plasmons comprises an equivalent surface plasmon waveguide 3, a graphene sandwich structure 4 is inserted into the middle of the equivalent surface plasmon waveguide 3, two sides of the equivalent surface plasmon waveguide 3 are respectively connected with one ends of microstrip line signal conversion transition parts 2 which are symmetrically arranged, and the other ends of the microstrip line signal conversion transition parts 2 are respectively connected with microstrip line signal transmission parts 1 which are symmetrically arranged. Sequentially arranging metal wires 6 which are arranged in an equal period and have the width of the waveguide and a medium substrate hollowed-out part 7 which are matched with each other from top to bottom in a medium layer of the equivalent surface plasmon waveguide 3; wherein, the metal wire 6 is covered with the graphene sandwich structure 4.
The microstrip line signal transmission part 1, the microstrip line signal conversion transition part 2 and the equivalent surface plasmon waveguide 3 respectively comprise a top metal guide strip layer 17, a dielectric layer and a bottom fully-covered metal layer 20 which are sequentially overlapped. Wherein, the top metal strip layer 17 and the bottom full-covering metal layer 20 form a double-layer metal strip structure. The top metal conduction band layer 17 comprises a rectangular metal conduction band 8 arranged on the microstrip line signal transmission part 1, a trapezoidal metal conduction band 9 arranged on the microstrip line signal conversion transition part 2 and a full-coverage metal ground 10 arranged on the equivalent surface plasmon integrated waveguide.
The dielectric layer comprises a first dielectric substrate 18, a second dielectric substrate 11 and a medium substrate 19 which is hollowed out in sequence, wherein the medium substrate hollowed-out part 7 of the medium substrate 19 which is hollowed out in the middle is positioned in the equivalent surface plasmon waveguide 3. A graphene sandwich structure 4 is arranged in an equivalent surface plasmon waveguide 3 between a first dielectric substrate 18 and a second dielectric substrate 11, metal wires 6 which are arranged in an equal period and have the width of a waveguide are arranged between the second dielectric substrate 11 and a medium substrate 19 which is hollowed out in the middle, and the arrangement length covers the hollowed-out part 7 of the medium substrate.
The microstrip line signal transmission part 1 comprises a rectangular metal conduction band 8 with a fixed width, a first dielectric substrate 18, a second dielectric substrate 11 and a bottom layer full-coverage metal layer 20 which are sequentially overlapped; the microstrip line signal conversion transition part 2 comprises a conduction band 9 with linearly reduced metal width, a first dielectric substrate 18, a second dielectric substrate 11 and a bottom layer full-coverage metal layer 20 which are sequentially overlapped; the equivalent surface plasmon substrate integrated waveguide 3 comprises a fully-covered metal ground 10, a first dielectric substrate 18, a graphene sandwich structure 4, a second dielectric substrate 11, a metal wire 6, a dielectric substrate 19 with a hollow middle and a bottom fully-covered metal layer 20 which are sequentially overlapped. The rectangular metal conduction band 8, the trapezoidal metal conduction band 9 and the full-coverage metal ground 10 form a top metal conduction band layer 17.
The metalized via holes 5 are arranged on two sides of the dielectric layer at equal periods, and the range of arrangement covers the equivalent surface plasmon waveguide 3; the graphene sandwich structure 4 is arranged between the first dielectric substrate 18 and the second dielectric substrate 11; the metal wires 6 are arranged in equal periods and have the width of waveguide width, the metal wires 6 are arranged between the second dielectric substrate 11 and the dielectric substrate 19 with the hollow part in the middle, and the range covered by the metal wires 6 is the hollow part 7 of the dielectric substrate.
The graphene sandwich structure 4 comprises rectangular graphene 13 and L-shaped graphene 12 which are connected with each other and used for external feeding; the rectangular graphene 13 is arranged in the equivalent surface plasmon waveguide 3 and is positioned right above the dielectric substrate hollowed-out part 7; the L-shaped graphene 12 is arranged in the microstrip line signal conversion transition part 2.
The preparation method of the dynamic adjustable graphene attenuator based on the equivalent surface plasmons comprises the following steps:
1) the thicknesses of the first dielectric substrate 18 and the second dielectric substrate 11, the thickness of the middle hollowed dielectric substrate 19 and the width of the hollowed part can be calculated by the effective dielectric constant of the dielectric and Maxwell electromagnetic equation. The results show that when the thicknesses of the first dielectric substrate 18, the second dielectric substrate 11 and the middle hollowed dielectric substrate 19 are respectively 1.067mm, 0.203mm and 0.203mm, the width of the hollowed part 7 of the dielectric substrate is 18mm, and the length of the hollowed part is 30mm, the device of the utility model has good transmission function;
2) as shown in fig. 1 and 3, the graphene sandwich structure 4 includes rectangular graphene 13 and L-type graphene 12, wherein the rectangular graphene 13 is disposed right above the hollowed portion 7 of the dielectric substrate to reduce effective surface plasmons, and the L-type graphene 12 serves as an external voltage;
3) modeling and optimizing the designed model by using commercial software CST to obtain the period, diameter and height of the metalized via holes 5 with equal periods on two sides of the substrate integrated waveguide part; the width linear transformation range and the length of the metal conduction band 9 with the linearly reduced width; length and width of graphene sandwich 4, sheet resistance value. The result shows that the period of the metallized via holes 5 with equal period at the two sides of the substrate integrated waveguide part is 0.2mm, the diameter is 0.1mm, and the height is 1.613mm of the sum of the thicknesses of the five layers of metal and the dielectric substrate; the width linear transformation range of the metal conduction band 9 with the linearly reduced width is 3.2mm to 2.2mm, and the length is 20.1 mm; the width of the rectangular graphene 13 is not less than the width of the dielectric substrate hollowed part 7 and is 18mm, the width of the equivalent surface plasmon substrate integrated waveguide 3 is not more than 22mm, the length of the dielectric substrate hollowed part 7 is not less than 30mm, the length of the equivalent surface plasmon substrate integrated waveguide 3 is not more than 40mm, the two are L-shaped graphene 12, the width of the rectangular graphene is 3mm, and the length of the rectangular graphene is not less than 10 mm.
4) And processing and preparing the model designed in the steps and testing the performance of the model. In order to conveniently place the graphene sandwich structure 4 and the metal wires 6, a layered stacking method is adopted, the first dielectric substrate 18, the second dielectric substrate 11 and the medium substrate 19 with a hollow middle are made of Rogers RO4350B materials with the relative dielectric constant of 3.48, and the metal materials are all copper.
Step 1), calculating the Effective dielectric constants of the dielectric substrate and the air and the Maxwell electromagnetic field equation at the interface of the second dielectric substrate 11 and the middle hollowed dielectric substrate 19 to obtain a dispersion curve equation, wherein the formula refers to (Z.Li, L.Liu, H.Sun, Y.Sun, C.Gu, X.Chen, Y.Luo, "Effective surface plasma dispersions in a wave guide," Physical Review Applied vol, 7, No.4, pp.044028,2017.), and calculating the thickness of the first dielectric substrate 18 and the second dielectric substrate 11 and the thickness of the middle hollowed dielectric substrate 19 and the width of the hollowed part of the attenuator in the designed frequency band through the dispersion curve.
In the steps 2) and 3), a time domain simulation method is adopted for display simulation, graphene is simulated by a resistance film with zero thickness, and scanning simulation with the interval of 100 omega/sq is carried out on the square resistance of the graphene in the area of 100 omega/sq-2500 omega/sq.
In step 4), as shown in fig. 5, the graphene sandwich structure includes a layer of diaphragm paper 15 soaked with ionic liquid, the thickness of the diaphragm paper 15 is 0.05mm, polyvinyl chloride layers 16 are symmetrically arranged on the upper and lower surfaces of the diaphragm paper 15, the thickness of the polyvinyl chloride layer 16 is 0.075mm, single-layer graphene 14 is arranged between the polyvinyl chloride layer 16 and the diaphragm paper 15, and the single-layer graphene 14 is transferred onto the polyvinyl chloride layer 16. Bias voltage is added between two layers of single-layer graphene, and the change of the sheet resistance of the graphene sandwich structure 4 can be controlled by adjusting the magnitude of the bias voltage, different sheet resistances can generate different dissipation amounts for the transmission power of effective surface plasmon polariton polarized waves, and therefore the bias voltage V of the graphene sandwich structure 4 is adjustedbOutput signals of different power levels can be obtained.
Fig. 1 is a cross-sectional view of a dynamically adjustable graphene attenuator based on equivalent surface plasmons. The first dielectric substrate 18, the second dielectric substrate 11, the dielectric substrate 19 with the hollow middle, the top metal conducting strip layer 17, the bottom metal layer 20, the graphene sandwich structure 4 and the metal wire 6 are tightly overlapped in sequence.
Fig. 2 to 5 are a plan view, a graphene placement diagram, and a dielectric substrate and wire placement diagram of the dynamically tunable graphene attenuator with equivalent surface plasmons, respectively, for the sake of clarity of the structure. Wherein, figure 4 shows that the period of the metal wire 6 with equal period arranged between the third and the fourth layer of medium substrates is 0.4mm, the diameter is 0.1mm, the length is 22mm, and the width and the length of the hollow part 7 of the medium substrate are 18mm and 30 mm.
Fig. 6 shows that when the operating frequency is 5.5GHz, the transmission coefficient of the device of the embodiment changes with the sheet resistance of the graphene sandwich structure 4, and when the sheet resistance of the graphene sandwich structure 4 is adjusted from 300ohm/sq to 3000ohm/sq, the attenuation coefficient of the dynamically adjustable attenuation device can be adjusted from-7 dB to about-15 dB, thereby realizing the dynamic attenuation of the equivalent surface plasmon polariton wave.
Claims (10)
1. Dynamic adjustable graphene attenuator based on equivalent surface plasmons, its characterized in that: the microstrip line signal conversion device comprises an equivalent surface plasmon waveguide (3), wherein two sides of the equivalent surface plasmon waveguide (3) are respectively connected with one end of a microstrip line signal conversion transition part (2) which is symmetrically arranged, and the other end of the microstrip line signal conversion transition part (2) is respectively connected with a microstrip line signal transmission part (1) which is symmetrically arranged; wherein, a metal wire (6) and a medium substrate hollowed-out part (7) which are matched with each other and used in an equal period arrangement and have the width of the waveguide are sequentially arranged in a medium layer of the equivalent surface plasmon waveguide (3) from top to bottom; wherein, the metal wire (6) is covered with a graphene sandwich structure (4).
2. The equivalent surface plasmon based dynamically tunable graphene attenuator of claim 1, wherein: the microstrip line signal transmission part (1), the microstrip line signal conversion transition part (2) and the equivalent surface plasmon waveguide (3) respectively comprise a top metal guide strip layer (17), a dielectric layer and a bottom fully-covered metal layer (20) which are sequentially overlapped.
3. The equivalent surface plasmon based dynamically tunable graphene attenuator of claim 2, wherein: the top metal conduction band layer (17) comprises a rectangular metal conduction band (8) arranged on the microstrip line signal transmission part (1), a trapezoidal metal conduction band (9) arranged on the microstrip line signal conversion transition part (2) and a full-coverage metal ground (10) arranged on the equivalent surface plasmon integrated waveguide.
4. The equivalent surface plasmon based dynamically tunable graphene attenuator of claim 2, wherein: the dielectric layer comprises a first dielectric substrate (18), a second dielectric substrate (11) and a medium substrate (19) with a hollow middle, wherein the first dielectric substrate, the second dielectric substrate and the medium substrate (11) are sequentially overlapped, and the hollow part (7) of the medium substrate (19) with the hollow middle is positioned in the equivalent surface plasmon waveguide (3).
5. The equivalent surface plasmon based dynamically tunable graphene attenuator of claim 4, wherein: metallized through holes (5) are arranged on two sides of the dielectric layer in an equal period, and the arrangement range of the metallized through holes (5) covers the equivalent surface plasmon waveguide (3); the graphene sandwich structure (4) is arranged between the first medium substrate (18) and the second medium substrate (11); the metal wires (6) are arranged in a periodic mode, the width of the metal wires is the waveguide width, the metal wires (6) are arranged between the second dielectric substrate (11) and the dielectric substrate (19) with a hollow middle, and the range covered by the metal wires (6) in an arrangement mode is the hollow part (7) of the dielectric substrate.
6. The equivalent surface plasmon based dynamically tunable graphene attenuator of claim 4, wherein: the graphene sandwich structure (4) comprises rectangular graphene (13) and L-shaped graphene (12) which are connected with each other and used for external feeding; the rectangular graphene (13) is arranged in the equivalent surface plasmon waveguide (3) and is positioned right above the hollowed part (7) of the dielectric substrate; the L-shaped graphene (12) is arranged in the microstrip line signal conversion transition part (2).
7. The equivalent surface plasmon based dynamically tunable graphene attenuator of claim 4, wherein: the thicknesses of the first dielectric substrate (18), the second dielectric substrate (11) and the medium substrate (19) with the hollow part in the middle and the width of the hollow part (7) of the dielectric substrate are calculated by the effective dielectric constant of the medium and the Maxwell electromagnetic equation.
8. The equivalent surface plasmon based dynamically tunable graphene attenuator of claim 4, wherein: modeling the designed model by using commercial software CST to obtain the period, the diameter and the height of the metalized through hole (5); the width linear transformation range and the length of the metal conduction band (9); the length, the width and the sheet resistance value of the graphene sandwich structure (4).
9. The equivalent surface plasmon based dynamically tunable graphene attenuator of claim 4, wherein: the first dielectric substrate (18), the second dielectric substrate (11) and the middle hollowed dielectric substrate (19) are made of Rogers RO4350B material with the relative dielectric constant of 3.48, and the top metal conducting strip layer (17) and the bottom full-covering metal layer (20) are made of copper.
10. The equivalent surface plasmon based dynamically tunable graphene attenuator of claim 4, wherein: the graphene sandwich structure (4) comprises a layer of diaphragm paper (15) soaked with ionic liquid, polyvinyl chloride layers (16) are symmetrically arranged on the upper surface and the lower surface of the diaphragm paper (15), single-layer graphene (14) is arranged between each polyvinyl chloride layer (16) and the diaphragm paper (15), and the single-layer graphene (14) is transferred to the polyvinyl chloride layers (16).
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