CN211294650U - Low-resistance transparent conductive film - Google Patents
Low-resistance transparent conductive film Download PDFInfo
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- CN211294650U CN211294650U CN202020128439.3U CN202020128439U CN211294650U CN 211294650 U CN211294650 U CN 211294650U CN 202020128439 U CN202020128439 U CN 202020128439U CN 211294650 U CN211294650 U CN 211294650U
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Abstract
The utility model relates to a conducting material especially relates to a transparent conducting film of low resistance. The utility model discloses a low resistance transparent conductive film, including the substrate, wherein, low resistance transparent conductive film still include conducting layer and protective layer, the conducting layer with the protective layer set up alternately; the conducting layer is at least two layers, the protective layer is at least two layers, and one conducting layer is arranged on the surface of the base material. The utility model provides a low resistance transparent conducting film is through the conducting layer that contains one or several kinds in nano silver, graphite alkene, carbon nanotube or the conductive polymer and the protective layer that contains compound, charge transfer complex, compound electric conductivity macromolecular material etc. of taking the conjugated structure, forms similar parallelly connected circuit to greatly reduced the resistance of conducting film.
Description
Technical Field
The utility model relates to a conducting material especially relates to a transparent conducting film of low resistance.
Background
The transparent conductive film (transparent conductive film for short) is a conductive material which can conduct electricity and has high light transmittance in a visible light range, and has wide application in the fields of touch screens, flat panel displays, solar cells, light emitting diodes and the like.
As a representative of nano materials, a transparent conductive thin film of a nano silver wire (hereinafter, abbreviated as AgNW) has attracted attention of researchers in recent years due to its excellent characteristics in electrical, optical and mechanical properties. The transparent conductive film prepared by the AgNW has the advantages of high visible light transmittance, low surface resistance, smooth and flat surface, good flexibility and the like, and is lower in price compared with the ITO film widely used at present.
In the prior art, the production method for coating the nano silver wire on the substrate such as transparent glass to form the transparent conductive film generally comprises the following steps: firstly, preparing a nano silver wire coating liquid, generally, uniformly stirring the nano silver wire in glue, then adding or not adding an auxiliary agent (a mixture containing a dispersing agent, a curing agent and a solvent), then coating the prepared nano silver wire coating liquid on the surface of a transparent substrate to form a nano silver wire conductive coating, and finally baking and curing to obtain the nano silver wire conductive coating. The main component of the glue is one or more high molecular organic matters, the high molecular organic matters can generally reduce the transmittance and the conductivity of the nano silver wire conductive layer, and when the transmittance is about 85%, the sheet resistance value of the nano silver wire conductive film can only reach about 20 omega/sq. In order to reduce the surface resistance of the AgNW transparent conductive film, the surface resistance is generally achieved by increasing the thickness of the AgNW layer, which inevitably sacrifices the light transmittance (i.e., visible light transmittance) of the conductive film, increases the haze of the conductive film, and thus reduces the overall effect of the conductive film.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to overcome above-mentioned defect, provide a low resistance transparent conductive film.
For realizing the purpose of the utility model, the utility model adopts the following technical scheme:
the low-resistance transparent conductive film comprises a substrate, wherein the low-resistance transparent conductive film further comprises conductive layers and protective layers, and the conductive layers and the protective layers are alternately arranged; the conducting layer is at least two layers, the protective layer is at least two layers, and one conducting layer is arranged on the surface of the base material.
Furthermore, the resistance of the conductive layer arranged on the surface of the substrate is smaller than that of other protective layers.
Further, in the above-mentioned case,
the conductive layer contains a conductive component; preferably, the conductive component is one or more of nano silver, graphene, a carbon nanotube or a conductive polymer;
the protective layer contains resin or conductive material; preferably, the resin contains a compound with a conjugated structure and a charge transfer complex, and the conductive material is a composite conductive polymer material, indium tin oxide or an inorganic semiconductor material.
Further, in the above-mentioned case,
the conjugated structure is one or more of pyrrole, thiophene, aniline and derivatives thereof, oligomeric pyrrole, oligomeric thiophene, oligomeric aniline or copolymers among the pyrrole, thiophene, aniline and oligomeric pyrrole;
the charge transfer complex is a charge transfer complex formed by TMB, TCNQ or both;
the composite conductive polymer material is formed by adding conductive filler or fibers into a polymer material, wherein the conductive filler is one or more of conductive carbon powder, conductive zinc oxide, conductive ITO (indium tin oxide) and antistatic ATO (antimony tin oxide);
the inorganic semiconductor material is selenium, germanium, monocrystalline silicon or a compound formed by a third main group element and a fifth main group element.
Furthermore, the sheet resistance of the low-resistance transparent conductive film is 0.1-80 omega/sq, the transmittance is 50-92%, and the haze is 0.6-20%.
Further, the substrate is a copolymer or a mixture or a laminated object of one or more materials of glass, polycarbonate, polyacrylate, polyimide, polyolefin and polyester, or a film obtained by functional coating treatment;
preferably, the polyolefin is polyethylene and the polyester is polyethylene terephthalate.
Furthermore, the thickness of the base material is 1-200 μm, the thickness of the conductive layer is 10-500nm, and the thickness of the protective layer is 10-500 nm.
Compared with the prior art, the utility model has the advantages of as follows:
the utility model provides a low resistance transparent conducting film is through the conducting layer that contains one or several kinds in nano silver, graphite alkene, carbon nanotube or the conductive polymer and the protective layer that contains compound, charge transfer complex, compound electric conductivity macromolecular material etc. of taking the conjugated structure, forms similar parallelly connected circuit to greatly reduced the resistance of conducting film.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural view of a five-layer low-resistance transparent conductive film of the present invention;
fig. 2 is a schematic structural view of a seven-layer low-resistance transparent conductive film according to the present invention;
wherein, in the figure:
1-substrate, 2-conductive layer, 3-protective layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
A low-resistance transparent conductive film comprises a substrate 1, a conductive layer 2 and a protective layer 3, wherein the conductive layer 2 and the protective layer 3 are alternately arranged; the conductive layer 2 has at least two layers, and the protective layer 3 has at least two layers, for example, the conductive layer 2 and the protective layer 3 may have two layers or three layers; one of the conductive layers 2 is disposed on the surface of the substrate 1.
As shown in fig. 1, a five-layer low-resistance transparent conductive film is provided, which specifically comprises: a low-resistance transparent conductive film comprises a substrate 1, a conductive layer 2 and a protective layer 3, wherein the conductive layer 2 and the protective layer 3 are alternately arranged, the conductive layer 2 and the protective layer 3 are respectively two layers, and one layer of the conductive layer 2 is arranged on the surface of the substrate 1.
As shown in fig. 2, a low-resistance transparent conductive film with a seven-layer structure is provided, which specifically comprises: a low-resistance transparent conductive film comprises a substrate 1, a conductive layer 2 and a protective layer 3, wherein the conductive layer 2 and the protective layer 3 are alternately arranged, the conductive layer 2 and the protective layer 3 are three layers, and one layer of the conductive layer 2 is arranged on the surface of the substrate 1.
The conducting layer 2 contains one or more of nano silver, graphene, carbon nano tubes or conducting polymers, and the thickness is 10-500 nm; the protective layer 3 contains resin or conductive paint, specifically, the resin contains conductive groups or conductive materials, and the conductive materials are composite conductive high molecular materials, compounds with conjugated structures, charge transfer complexes, indium tin oxide or inorganic semiconductor materials, and the thickness of the conductive materials is 10-500 nm.
The composite conductive high polymer material is prepared by adding conductive filler or fiber into a high polymer material, wherein the conductive filler is one or more of conductive carbon powder, conductive zinc oxide, a conductive ITO solution and an antistatic ATO solution; the conjugated structure is one or more of pyrrole, aniline, thiophene and derivatives thereof, oligomeric pyrrole, oligomeric thiophene, oligomeric aniline or copolymers among the pyrrole, aniline, oligomeric thiophene and oligomeric aniline; the charge transfer complex is a charge transfer complex formed by TMB, TCNQ or both; the inorganic semiconductor material is selenium, germanium, monocrystalline silicon or a compound formed by a third main group element and a fifth main group element.
The thickness of the substrate is 1-200 μm, and the substrate is a copolymer, a mixture or a laminated product of one or more materials of glass, polycarbonate, polyacrylate, polyimide, polyolefin and polyester, or a film obtained by functional coating treatment; preferably, the polyolefin is polyethylene and the polyester is polyethylene terephthalate.
The sheet resistance of the low-resistance transparent conductive film is 0.1-80 omega/sq, the transmittance is 50-92%, and the haze is 0.6-20%.
Example 1
In the present embodiment, a low-resistance transparent conductive film is provided, as shown in fig. 1, which includes a substrate 1, two conductive layers 2 and two protective layers 3, wherein each conductive layer 2 and each protective layer 3 are alternately disposed, and one conductive layer 2 is disposed on a surface of the substrate 1. The base material is a polyethylene terephthalate film with the thickness of 125 mu m; the conducting layer 2 contains nano silver and has the thickness of 100 nm; the protective layer 3 contains a compound of oligothiophene with a conducting group and has a thickness of 100 nm. The square resistance of the low-resistance transparent conductive film is 2 omega/sq, the transmittance is 66 percent, and the haze is 10 percent.
Example 2
In the present embodiment, a low-resistance transparent conductive film, as shown in fig. 1, includes a substrate 1, two conductive layers 2 and two protective layers 3, wherein each conductive layer 2 and each protective layer 3 are alternately disposed, and one conductive layer 2 is disposed on a surface of the substrate 1. The base material is a polyethylene terephthalate film with the thickness of 125 mu m; the conducting layer 2 contains nano silver and has the thickness of 100 nm; the protective layer 3 contains a protective layer with 100nm of antistatic ATO solution ATO-050 of Shanghai Zhengnano science and technology Limited. The sheet resistance of the low-resistance transparent conductive film is 13 omega/sq, the transmittance is 85 percent, and the haze is 3.1 percent.
Example 3
In the present embodiment, a low resistance transparent conductive film, as shown in fig. 2, includes a substrate 1, three conductive layers 2 and three protective layers 3, wherein each conductive layer 2 and each protective layer 3 are alternately disposed, and one conductive layer 2 is disposed on the surface of the substrate 1. The substrate is a polycarbonate film and has the thickness of 200 mu m; the conducting layer 2 contains graphene, and the thickness is 100 nm; the protective layer 3 contains ITO and has a thickness of 100 nm. The square resistance of the low-resistance transparent conductive film is 21 omega/sq, the transmittance is 82%, and the haze is 2.1%.
Comparative example 1
This comparative example provides a low-resistance transparent conductive film having the same structure as that of example 1, as shown in fig. 1, including a substrate 1, two conductive layers 2 and two protective layers 3, each conductive layer 2 being alternately disposed with each protective layer 3, wherein one conductive layer 2 is provided on the surface of the substrate 1. The base material is a polyethylene terephthalate film with the thickness of 125 mu m; the conducting layer 2 contains nano silver and has the thickness of 100 nm; the protective layer 3 contains a urethane resin protective layer and has a thickness of 100 nm. The sheet resistance of the low-resistance transparent conductive film is 21 omega/sq, the transmittance is 85 percent, and the haze is 3.1 percent.
As can be seen from comparing example 1 with comparative example 1, the conductive film provided by the present invention has lower surface resistance, higher transmittance and lower haze. Therefore, the method of the present invention can significantly reduce the surface resistance of the conductive film by changing the components of the protective layer coating liquid, and simultaneously, the transmittance of the conductive film and the haze of the conductive film are not sacrificed.
The following explains a process of forming the low-resistance transparent conductive film of the present invention:
(1) firstly, coating a conductive layer coating liquid on the upper surface of a base material, drying or curing after coating, and forming a conductive layer on the upper surface of the base material;
(2) coating a protective layer coating liquid on the upper surface of the formed conductive layer, drying or curing after coating, and forming a protective layer on the upper surface of the conductive layer;
(3) and (3) repeating the step (1) and the step (2) to obtain the low-resistance transparent conductive film.
According to the number of repetitions, a low-resistance transparent conductive film having a structure of five layers or seven layers or the like can be obtained.
Wherein, the conductive layer coating liquid consists of 0.1 to 10 percent of conductive component, 0.01 to 0.1 percent of wetting dispersant, 0.01 to 0.5 percent of auxiliary agent, 0.1 to 5 percent of viscosity regulator and the balance of solvent; the protective layer coating liquid consists of 0.1-10% of resin or conductive material, 0.01-0.1% of auxiliary agent, 0.01-0.5% of binder and the balance of solvent.
The conductive component is one or more of nano silver, graphene, carbon nano tubes or conductive polymers; the resin contains a compound with a conjugated structure and a charge transfer complex, and the conductive material is a composite conductive high polymer material, indium tin oxide or an inorganic semiconductor material.
Further, the conjugated structure is one or more of pyrrole, thiophene, aniline and derivatives thereof, oligomeric pyrrole, oligomeric thiophene, oligomeric aniline or copolymers between the pyrrole, the oligomeric thiophene and the oligomeric aniline; the charge transfer complex is a charge transfer complex formed by TMB, TCNQ or both; the composite conductive polymer material is formed by adding conductive filler or fibers into a polymer material, wherein the conductive filler is one or more of conductive carbon powder, conductive zinc oxide, conductive ITO (indium tin oxide) and antistatic ATO (antimony tin oxide); the inorganic semiconductor material is selenium, germanium, monocrystalline silicon or a compound formed by a third main group element and a fifth main group element.
The wetting dispersant may be DISPERBYK-2012 and the like.
The viscosity regulator is at least one of methyl acrylate, ethyl acrylate, butyl acrylate, isooctyl acrylate, isobornyl methacrylate, octadecyl methacrylate, hexamethylene diisocyanate, trimethyl hexamethylene diisocyanate and triallyl isocyanurate.
The auxiliary agent can be one or more selected from toughening agent, defoaming agent, stabilizing agent and surfactant.
Specifically, the toughening agent may be polycaprolactone triol and polyol products, such as 305T, 205N from yisheng corporation, great GT8003 from gudi corporation, and the like.
The defoaming agent can be a polymer without organic silicon, such as Digao defoaming agent TEGOAirex 920, TEGO Airex 921 and the like without organic silicon.
Examples of the stabilizer include cellulose, polyvinylpyrrolidone, GENORAD 16, GENORAD18, GENORAD 20, and GENORAD 22 from Ruon, and alkyl acrylate phosphate PM2010 from Jingdey chemical.
The surfactant can be one or more of organosilicon acrylate and modified polysiloxane polymers capable of being crosslinked by radiation. The organic silicon acrylate capable of being subjected to radiation crosslinking can be TEGO RAD2010, 2011, 2100, 2200N, 2250 and the like of Digao company, and can participate in a photocuring reaction and perform a crosslinking reaction, so that phenomena such as fogging of a printed product can be inhibited; the modified polysiloxane polymer may be BYK-333, BYK-371, BYK-377 from Bick, Tego wet 270 from Digao, Tego Glide 450 from Digao, and the like.
The binder may be a cationic epoxy photocurable resin.
The solvent used by the conductive layer can be one or more of water, ethanol or isopropanol; the solvent used by the protective layer can be one or more of acetone, butanone, methyl ethyl ketone, ethyl acetate, toluene, xylene, heavy aromatic hydrocarbon and butyl acetate.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described in the foregoing embodiments, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (4)
1. The low-resistance transparent conductive film comprises a substrate (1), and is characterized by further comprising conductive layers (2) and protective layers (3), wherein the conductive layers (2) and the protective layers (3) are alternately arranged; the conductive layer (2) is at least two layers, the protective layer (3) is at least two layers, and one conductive layer (2) is arranged on the surface of the base material (1).
2. The transparent conductive film according to claim 1, wherein the conductive layer (2) provided on the surface of the substrate (1) has a resistance lower than that of the protective layer (3).
3. The transparent conductive film with low resistance according to claim 2,
the conductive layer (2) contains a conductive component;
the protective layer (3) contains resin or conductive material.
4. The transparent conductive film with low resistance according to any one of claims 1 to 3,
the thickness of the base material is 10-200 μm;
the thickness of the conducting layer (2) is 10-500 nm;
the thickness of the protective layer (3) is 10-500 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020128439.3U CN211294650U (en) | 2020-01-19 | 2020-01-19 | Low-resistance transparent conductive film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020128439.3U CN211294650U (en) | 2020-01-19 | 2020-01-19 | Low-resistance transparent conductive film |
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| CN211294650U true CN211294650U (en) | 2020-08-18 |
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| CN202020128439.3U Active CN211294650U (en) | 2020-01-19 | 2020-01-19 | Low-resistance transparent conductive film |
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