CN211255270U - Polycrystalline silicon reduction furnace feeding system - Google Patents
Polycrystalline silicon reduction furnace feeding system Download PDFInfo
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- CN211255270U CN211255270U CN201921342009.5U CN201921342009U CN211255270U CN 211255270 U CN211255270 U CN 211255270U CN 201921342009 U CN201921342009 U CN 201921342009U CN 211255270 U CN211255270 U CN 211255270U
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Abstract
The utility model discloses a polycrystalline silicon reduction furnace feeding system, which comprises an atomizing device and a pipeline type volatilizer, wherein the atomizing device is limited with an atomizing cavity and is provided with a trichlorosilane liquid inlet, a hydrogen inlet and a fog outlet which are communicated with the atomizing cavity, and the atomizing device is used for uniformly atomizing trichlorosilane liquid and hydrogen which enter the atomizing cavity to generate fog which is discharged through the fog outlet; the pipeline type volatilizer comprises an inner pipe and a heating assembly, wherein one end of the inner pipe is communicated with a mist outlet of the atomizing device, and the other end of the inner pipe is communicated with the reducing furnace; the heating assembly is positioned on the periphery of the inner pipe and extends along the length direction of the inner pipe; the heating assembly is used for heating and vaporizing the mist entering the inner pipe from the mist outlet to form mixed gas so as to supply the mixed gas to the reduction furnace. The utility model discloses a polycrystalline silicon reduction furnace feeding system stability is high, and the ratio precision is high, and the ratio is adjusted in a flexible way, and polycrystalline silicon product quality is high.
Description
Technical Field
The utility model relates to a polycrystalline silicon reduction furnace feed technical field especially relates to a polycrystalline silicon reduction furnace feeding system.
Background
At present, polysilicon enterprises basically adopt a traditional feeding mode, a centralized vaporizer device simultaneously feeds materials to a plurality of reduction furnaces, trichlorosilane and hydrogen enter the vaporizer together according to a certain proportion to be vaporized to obtain gaseous mixed gas, and the gaseous mixed gas enters the reduction furnaces to react.
The traditional centralized feeding mode of the carburetors is a balance for simultaneously feeding a plurality of reduction furnaces by adopting one or two carburetors, which is called a centralized feeding mode, and has the following defects:
1. once the carburettor leaks, the running of a plurality of reducing furnaces is influenced, which causes the large-area production stop or the material lowering running of a reducing furnace system;
2. if the vaporizer leaks, the heat source medium enters the vaporizer, and meanwhile, part of impurities enter the reduction furnace to influence the quality of the polycrystalline product;
3. because the vaporizer belongs to centralized feeding, the reducing furnace is frequently started and stopped, so that the temperature of the vaporizer fluctuates;
4. because the ratio of the centralized feeding is a constant value, the growth rates of different reducing furnaces in each operation time period are different, the ratio needs to be adjusted, and a single reducing furnace can only be adjusted by branch hydrogen, so the ratio accuracy is poor.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that exists among the prior art at least. Therefore, an object of the utility model is to provide a polycrystalline silicon reduction furnace feeding system, system stability is high, and the ratio precision is high, and the ratio is adjusted in a flexible way, and polycrystalline silicon product quality is high.
According to the utility model discloses polycrystalline silicon reduction furnace feeding system, include:
the device comprises an atomizing device, a gas inlet and a gas outlet, wherein the atomizing device is limited with an atomizing cavity and is provided with a trichlorosilane liquid inlet, a hydrogen inlet and a mist outlet which are communicated with the atomizing cavity, and the atomizing device is used for uniformly atomizing the trichlorosilane liquid and the hydrogen which enter the atomizing cavity to generate mist which is discharged through the mist outlet;
the pipeline type volatilizer comprises an inner pipe and a heating assembly, one end of the inner pipe is communicated with the fog outlet of the atomizing device, and the other end of the inner pipe is communicated with the reducing furnace; the heating assembly is positioned on the periphery of the inner pipe and extends along the length direction of the inner pipe; the heating assembly is used for heating and vaporizing the mist entering the inner pipe from the mist outlet to form mixed gas so as to supply the mixed gas to the reduction furnace.
According to the feeding system of the polycrystalline silicon reduction furnace provided by the embodiment of the utility model, the working process is that hydrogen enters the atomizing cavity from the hydrogen inlet, meanwhile, trichlorosilane liquid enters the atomizing cavity from the trichlorosilane liquid inlet, the atomizing device uniformly atomizes trichlorosilane in the atomizing cavity to form fog, namely, the fog-like mixture of hydrogen and trichlorosilane, and the fog-like mixture of hydrogen and trichlorosilane enters the inner pipe of the pipeline type volatilizer connected with the fog outlet through the fog outlet; in the process of conveying the atomized mixture of hydrogen and trichlorosilane in the inner pipe, a heating assembly of the pipeline type volatilizer heats the atomized mixture of hydrogen and trichlorosilane, so that trichlorosilane in the atomized mixture is changed from a liquid phase to a gas phase to form mixed gas of hydrogen and trichlorosilane; the inner pipe of the pipeline type volatilizer is connected with the reducing furnace, and the mixed gas of the hydrogen and the trichlorosilane is conveyed into the reducing furnace through the inner pipe of the pipeline type volatilizer to react for manufacturing the polysilicon product.
According to the utility model discloses polycrystalline silicon reduction furnace feeding system, in atomizing device, according to the proportion of actual demand hydrogen and trichlorosilane liquid carry out even atomizing earlier and form the vaporific mixture of hydrogen and trichlorosilane to improve trichlorosilane's vaporization efficiency in pipeline formula volatilizer, can adjust the ratio of material in real time through hydrogen import and trichlorosilane liquid import in the reduction furnace operation process, avoid the system fluctuation to reduce reduction furnace stability, ensure the quality of polycrystalline silicon product; in the pipeline type volatilizer, the heating assembly heats the inner pipe and the atomized mixture of the hydrogen and the trichlorosilane inside the inner pipe, so that the atomized mixture of the hydrogen and the trichlorosilane reaches a certain temperature to be vaporized to form the mixed gas of the hydrogen and the trichlorosilane, the mixed gas is supplied to the reduction furnace, the pipeline type volatilizer is connected with the reduction furnace one by one, and the polysilicon reduction furnace feeding system realizes independent feeding, so that the pipeline type volatilizer has small temperature fluctuation, the reduction furnace is stable in feeding, and the proportioning precision is high. The utility model discloses polycrystalline silicon reduction furnace feeding system stability is high, and the ratio precision is high, and the ratio is adjusted in a flexible way, and polycrystalline silicon product quality is high.
According to the utility model discloses an embodiment, atomizing device includes venturi atomization pipe and static mixing pipe, the one end of venturi atomization pipe is equipped with in the axial direction trichlorosilane liquid import just is equipped with in radial direction the hydrogen import, the other end of venturi atomization pipe with the one end axial intercommunication of static mixing pipe, the other end of static mixing pipe is equipped with the fog outlet.
According to some embodiments of the present invention, the heating assembly includes an outer tube, the outer tube is sleeved on the outer circumference of the inner tube, so that an interlayer space for circulating a high-temperature flowing medium is formed between the inner circumferential wall of the outer tube and the outer circumferential wall of the inner tube, and both ends of the interlayer space are sealed; and a high-temperature flowing medium inlet is formed in one end, close to the atomizing device, of the outer pipe in the radial direction, and a high-temperature flowing medium outlet is formed in one end, close to the reducing furnace, of the outer pipe in the radial direction.
According to a further embodiment of the present invention, the inner tube comprises a plurality of straight tube sections and a plurality of bend sections, the plurality of straight tube sections are arranged in parallel, and the plurality of bend sections connect the plurality of straight tube sections in series; the outer pipe comprises a plurality of straight outer pipes, the outer pipes are arranged on the peripheries of the straight pipe sections of the inner pipe in a one-to-one correspondence mode, the outer pipes are communicated in series through side pipelines, one end, close to the atomizing device, of one of the outer pipes is provided with the high-temperature flowing medium inlet, and the other end, close to the reduction furnace, of the outer pipe is provided with the high-temperature flowing medium outlet.
According to a still further embodiment of the present invention, the inner tube comprises three straight tube sections and two bend sections, the three straight tube sections are arranged in parallel, and the two bend sections connect the three straight tube sections in series; the three outer pipes are straight outer pipes and are respectively arranged on the peripheries of the three straight pipe sections in a one-to-one correspondence manner; the high-temperature flowing medium inlet is arranged at one end of the three outer pipes, the other end of the outer pipe, provided with the high-temperature flowing medium inlet, is provided with a first side pipe, the other end of the outer pipe, provided with the high-temperature flowing medium outlet, is provided with a fourth side pipe, the two ends of the middle outer pipe are respectively provided with a second side pipe and a third side pipe, the first side pipe is communicated with the second side pipe, and the third side pipe is communicated with the fourth side pipe.
According to some embodiments of the invention, the inner tube comprises one or more tubes.
According to some embodiments of the invention, the inner tube is an EP-grade polished tube.
According to some embodiments of the invention, the outer tube is a 316L stainless steel tube.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic structural view of a feeding system of a polysilicon reduction furnace according to an embodiment of the present invention.
FIG. 2 is a schematic view of the inner tube assembly of the feeding system of the polysilicon reduction furnace according to the embodiment of the present invention.
Reference numerals:
polycrystalline silicon reduction furnace feeding system 1000
Atomizing device 1
Static mixing tube 13 mist outlet 131
High-temperature flowing medium outlet 223 of high-temperature flowing medium inlet 222 of straight outer pipe 221 of heating assembly 22
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention.
A polysilicon reduction furnace feed system 1000 according to an embodiment of the present invention will be described with reference to fig. 1 and 2.
As shown in fig. 1 and 2, a feeding system 1000 of a polysilicon reduction furnace according to an embodiment of the present invention includes an atomizing device 1 and a tubular volatilizer 2. The atomizing device 1 is limited with an atomizing cavity and is provided with a trichlorosilane liquid inlet 121, a hydrogen inlet 122 and a mist outlet 131 which are communicated with the atomizing cavity, and the atomizing device 1 is used for uniformly atomizing trichlorosilane liquid and hydrogen which enter the atomizing cavity to generate mist which is discharged through the mist outlet 131; the pipeline type volatilizer 2 comprises an inner pipe 21 and a heating assembly 22, wherein one end of the inner pipe 21 is communicated with a fog outlet 131 of the atomizing device 1, and the other end is communicated with the reducing furnace; the heating assembly 22 is positioned at the periphery of the inner pipe 21 and extends along the length direction of the inner pipe 21; the heating assembly 22 is used for heating and vaporizing the mist entering from the mist outlet 131 to form a mixed gas to supply the mixed gas to the reduction furnace.
Specifically, the atomization device 1 is limited to an atomization cavity and is provided with a trichlorosilane liquid inlet 121, a hydrogen inlet 122 and a mist outlet 131 which are communicated with the atomization cavity, and the atomization device 1 is used for uniformly atomizing trichlorosilane liquid and hydrogen which enter the atomization cavity to generate mist which is discharged through the mist outlet 131. Therefore, hydrogen and trichlorosilane liquid can be fed into the atomizing device 1 through the hydrogen inlet 122 and the trichlorosilane liquid inlet 121 according to the proportion required by actual production, the proportion of materials can be adjusted in real time through the hydrogen inlet 122 and the trichlorosilane liquid inlet 121 in the operation process of the reducing furnace, the proportion is adjusted flexibly, the system fluctuation is avoided, the stability of the reducing furnace is reduced, and the quality of polycrystalline silicon products is ensured.
The pipeline type volatilizer 2 comprises an inner pipe 21 and a heating assembly 22, wherein one end of the inner pipe 21 is communicated with a fog outlet 131 of the atomizing device 1, and the other end is communicated with the reducing furnace; the heating assembly 22 is positioned at the periphery of the inner pipe 21 and extends along the length direction of the inner pipe 21; the heating unit 22 is used for heating and vaporizing the mist entering the inner tube 21 from the mist outlet 131 to form a mixed gas to supply the mixed gas to the reduction furnace. It can be understood that the pipeline-type volatilizers 2 are connected with the reduction furnace one to one, the polysilicon reduction furnace feeding system 1000 realizes independent feeding, and when the growth rates of the reduction furnace are different in each operation time period, the proportion of hydrogen to trichlorosilane is directly adjusted by adjusting the hydrogen inlet 122 and the trichlorosilane inlet 121, so that the pipeline-type volatilizers 2 have small temperature fluctuation, the reduction furnace feeding is stable, and the proportion precision is high.
According to the feeding system 1000 of the polysilicon reduction furnace provided by the embodiment of the utility model, the working process is 1000, hydrogen enters the atomizing cavity from the hydrogen inlet 122, meanwhile, trichlorosilane liquid enters the atomizing cavity from the trichlorosilane liquid inlet 121, the atomizing device 1 uniformly atomizes trichlorosilane in the atomizing cavity to form mist, namely, mist mixture of hydrogen and trichlorosilane, and the mist mixture of hydrogen and trichlorosilane enters the inner pipe 21 of the pipeline type volatilizer 2 connected with the mist outlet 131 through the mist outlet 131; in the process of conveying the atomized mixture of hydrogen and trichlorosilane in the inner pipe 21, the heating assembly 22 of the pipeline type volatilizer 2 heats the atomized mixture of hydrogen and trichlorosilane, so that the trichlorosilane in the atomized mixture is changed from a liquid phase to a gas phase to form a mixed gas of hydrogen and trichlorosilane; the inner pipe 21 of the pipeline type volatilizer 2 is connected with the reducing furnace, and the mixed gas of the hydrogen and the trichlorosilane is conveyed into the reducing furnace through the inner pipe 21 of the pipeline type volatilizer 2 to react for manufacturing the polysilicon product.
According to the feeding system 1000 of the polycrystalline silicon reduction furnace provided by the embodiment of the utility model, in the atomizing device 1, the hydrogen and the trichlorosilane liquid according to the proportion of the actual demand are firstly uniformly atomized to form a vaporific mixture of the hydrogen and the trichlorosilane, so that the vaporization efficiency of the trichlorosilane is improved in the pipeline type volatilizer 2, the ratio of the materials can be adjusted in real time through the hydrogen inlet 122 and the trichlorosilane liquid inlet 121 in the operation process of the reduction furnace, the fluctuation of the system is avoided, the stability of the reduction furnace is reduced, and the quality of the polycrystalline silicon product is ensured; in the pipeline-type volatilizer 2, the heating assembly 22 heats the inner pipe 21 and the inside atomized mixture of hydrogen and trichlorosilane, so that the atomized mixture of hydrogen and trichlorosilane reaches a certain temperature and is vaporized to form mixed gas of hydrogen and trichlorosilane, the mixed gas is supplied to the reduction furnace, the pipeline-type volatilizer 2 is connected with the reduction furnace one by one, the polysilicon reduction furnace feeding system 1000 realizes independent feeding, and when the growth rates of the reduction furnace are different in each operation time period, the ratio of hydrogen and trichlorosilane is directly adjusted by adjusting the hydrogen inlet 122 and the trichlorosilane inlet 121, so that the pipeline-type volatilizer 2 has small temperature fluctuation, the reduction furnace is stable in feeding, and the ratio precision is high. To sum up, the utility model discloses polycrystalline silicon reduction furnace feeding system 1000 of embodiment is stable high, and the ratio precision is high, and the ratio is adjusted in a flexible way, and polycrystalline silicon product quality is high.
According to the utility model discloses an embodiment, atomizing device 1 includes venturi atomization pipe 12 and static mixing pipe 13, and the one end of venturi atomization pipe 12 is equipped with trichlorosilane liquid import 121 on the axial direction and is equipped with hydrogen import 122 on radial direction, and the other end of venturi atomization pipe 12 communicates with the one end axial of static mixing pipe 13, and the other end of static mixing pipe 13 is equipped with fog outlet 131. It can be understood that high-speed hydrogen and trichlorosilane liquid enter the venturi atomization tube 12 at the same time, and after passing through a narrow pipeline in the venturi atomization tube 12, the high-speed hydrogen drives the trichlorosilane liquid to impact the inner wall of the venturi atomization tube 12, so that the trichlorosilane liquid is rapidly atomized. The atomized mixture of the hydrogen and the trichlorosilane enters the static mixing pipe 13 from one end of the Venturi atomization pipe 12, and the static mixing pipe 13 changes the flowing state of the atomized mixture of the hydrogen and the trichlorosilane in the pipe by utilizing the mixing unit bodies fixed in the pipe so as to achieve the purposes of good dispersion and full mixing of the hydrogen and the atomized trichlorosilane. The uniformly mixed atomized mixture of the hydrogen and the trichlorosilane is discharged through an fog outlet 131 at the other end of the static mixing pipe 13. The venturi atomization pipe 12 and the static mixing pipe 13 are used for rapidly atomizing the hydrogen and the trichlorosilane liquid, and the atomized mixture of the hydrogen and the trichlorosilane is uniformly mixed, so that the vaporization efficiency of the atomized mixture of the hydrogen and the trichlorosilane is improved, and the subsequent process flow of vaporization is shortened.
According to some embodiments of the present invention, the heating assembly 22 includes an outer tube, the outer tube is sleeved on the outer circumference of the inner tube 21, so that an interlayer space for the high temperature flowing medium to flow circularly is formed between the inner circumferential wall of the outer tube and the outer circumferential wall of the inner tube 21, and both ends of the interlayer space are sealed; the outer tube is provided with a high-temperature flowing medium inlet 222 at an end close to the atomizing device 1 in the radial direction, and a high-temperature flowing medium outlet 223 at an end close to the reduction furnace in the radial direction. It can be understood that the high-temperature flowing medium enters the interlayer space between the outer sleeve and the inner sleeve 21 through the high-temperature flowing medium inlet 222, exchanges heat with the atomized mixture of hydrogen and trichlorosilane in the inner sleeve 21 and vaporizes the atomized mixture of hydrogen and trichlorosilane, and then the high-temperature flowing medium is discharged from the high-temperature flowing medium outlet 223, so that the atomized mixture of hydrogen and trichlorosilane is quantitatively vaporized and is convenient to operate and control.
According to a further embodiment of the present invention, the inner tube 21 comprises a plurality of straight tube sections and a plurality of bend sections, the plurality of straight tube sections are arranged in parallel, and the plurality of bend sections connect the plurality of straight tube sections in series; the outer pipe includes a plurality of, and a plurality of outer pipes are straight outer pipe 221, and a plurality of outer pipes establish the periphery of a plurality of straight tube sections of inner tube 21 respectively one-to-one, and a plurality of outer pipes are established ties the intercommunication through the side pipeline, and one of them outer pipe of a plurality of outer pipes is equipped with high temperature flowing medium import 222 near the atomizing device 1, and the one end that another outer pipe is near the reduction furnace is equipped with high temperature flowing medium export 223. It can be understood that after the mist mixture of hydrogen and trichlorosilane enters the inner pipe 21 through the mist outlet 131, the mixture sequentially passes through the straight pipe section and the bent pipe section of the inner pipe 21, the high-temperature medium enters the outer pipe from the high-temperature flowing medium inlet 222 and sequentially passes through the straight outer pipe 221 and the side pipeline, the high-temperature medium heats the mist mixture of hydrogen and trichlorosilane in the straight pipe section to be vaporized so as to use the combination of the inner pipe and the outer pipe, the problem that the inner pipe wall is limited in thickness due to the fact that a jacket is made is avoided, the wall thickness is reduced, safety risks occur, and the separation structure is made to be convenient to overhaul, clean and replace is avoided.
It should be noted that, in some embodiments, the reduction furnace further includes a reduction furnace chassis air inlet pipeline combined distribution system, a precision adjusting valve is additionally installed on each inner tube 21, when the inner tube 21 sends the mixed gas of hydrogen and trichlorosilane into the reduction furnace, the output quantity of the mixed gas at the outlets of different inner tubes 21 can be controlled by adjusting the precision adjusting valve, so as to ensure that the gas field in the reduction furnace is uniform and stable, and thus the appearance quality of silicon products is improved.
According to a still further embodiment of the present invention, the inner tube 21 comprises three straight tube sections and two bend sections, the three straight tube sections are arranged in parallel, and the three straight tube sections are connected in series and communicated by the two bend sections; the three outer pipes are straight outer pipes 221 and are respectively arranged on the peripheries of the three straight pipe sections in a one-to-one correspondence mode; of the three outer tubes, the outer tube having the high temperature flowing medium inlet 222 at one end thereof is provided at the other end thereof with a first side tube 224, the outer tube having the high temperature flowing medium outlet 223 at one end thereof is provided at the other end thereof with a fourth side tube 227, the two ends of the middle one of the outer tubes are respectively provided with a second side tube 225 and a third side tube 226, the first side tube 224 is communicated with the second side tube 225, and the third side tube 226 is communicated with the fourth side tube 227. It can be understood that hydrogen and trichlorosilane liquid are atomized and mixed through the atomizing device 1 to form a hydrogen and trichlorosilane atomized mixture, the hydrogen and trichlorosilane atomized mixture is heated by a first section of a straight pipe section when passing through the straight pipe section which is connected in sequence, then the temperature is raised by a second section of the straight pipe section, and finally the third section of the straight pipe section is used for carrying out overheating treatment, so that the hydrogen and trichlorosilane atomized mixture is fully vaporized, the hydrogen and trichlorosilane are uniformly mixed, the condition that the thickness of an inner pipe wall is limited due to the fact that a jacket is made is avoided, the wall thickness is reduced, safety risks occur, and the separating structure is made to be convenient to overhaul, clean and replace, the mode is simple, impurity aggregation is not easy, and the occupied area is small. As shown in FIG. 1, the straight pipe section and the bent pipe section are connected in sequence, and the straight outer pipe 221 and the side pipe are connected in sequence, so that the structure is compact, and the occupied area is small.
It should be noted that one straight outer tube 221 of the three straight outer tubes 221 may be formed by connecting a plurality of tubes, so as to facilitate maintenance, cleaning and replacement. The number of the straight outer tubes 211 is as small as possible, so that the phenomenon that materials are excessively contacted with metal and excessively polluted is avoided, and the quality of a polycrystalline silicon product is reduced.
According to some embodiments of the present invention, the inner tube 21 comprises one or more pieces. For example, as shown in fig. 2, the number of the inner tubes 21 may be four.
According to some embodiments of the present invention, the inner tube 21 is an EP-grade polished tube. It can be understood that the surface of the EP-grade polishing pipe is bright, smooth and clean, the corrosion resistance is strong, the phenomenon that the mixed gas of hydrogen and trichlorosilane is polluted by metal impurities due to the rusting of a pipeline is avoided, and the purity of a polycrystalline silicon product is improved.
According to some embodiments of the invention, the outer tube is a 316L stainless steel tube. It can be understood that the 316L stainless steel pipeline has stronger corrosion resistance than the steel pipe, and can effectively prolong the service life of the outer pipe.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (8)
1. A polycrystalline silicon reduction furnace feeding system is characterized by comprising:
the device comprises an atomizing device, a gas inlet and a gas outlet, wherein the atomizing device is limited with an atomizing cavity and is provided with a trichlorosilane liquid inlet, a hydrogen inlet and a mist outlet which are communicated with the atomizing cavity, and the atomizing device is used for uniformly atomizing the trichlorosilane liquid and the hydrogen which enter the atomizing cavity to generate mist which is discharged through the mist outlet;
the pipeline type volatilizer comprises an inner pipe and a heating assembly, one end of the inner pipe is communicated with the fog outlet of the atomizing device, and the other end of the inner pipe is communicated with the reducing furnace; the heating assembly is positioned on the periphery of the inner pipe and extends along the length direction of the inner pipe; the heating assembly is used for heating and vaporizing the mist entering the inner pipe from the mist outlet to form mixed gas so as to supply the mixed gas to the reduction furnace.
2. The polycrystalline silicon reduction furnace feeding system according to claim 1, wherein the atomizing device comprises a venturi atomizing pipe and a static mixing pipe, one end of the venturi atomizing pipe is provided with the trichlorosilane liquid inlet in the axial direction and the hydrogen inlet in the radial direction, the other end of the venturi atomizing pipe is axially communicated with one end of the static mixing pipe, and the other end of the static mixing pipe is provided with the mist outlet.
3. The polycrystalline silicon reduction furnace feeding system according to claim 1 or 2, wherein the heating assembly comprises an outer pipe, the outer pipe is sleeved on the outer periphery of the inner pipe, so that an interlayer space in which a high-temperature flowing medium flows circularly is formed between the inner peripheral wall of the outer pipe and the outer peripheral wall of the inner pipe, and two ends of the interlayer space are sealed; and a high-temperature flowing medium inlet is formed in one end, close to the atomizing device, of the outer pipe in the radial direction, and a high-temperature flowing medium outlet is formed in one end, close to the reducing furnace, of the outer pipe in the radial direction.
4. The polycrystalline silicon reduction furnace feeding system according to claim 3, wherein the inner pipe includes a plurality of straight pipe sections and a plurality of bent pipe sections, the plurality of straight pipe sections being arranged in parallel, the plurality of bent pipe sections connecting the plurality of straight pipe sections in series; the outer pipe comprises a plurality of straight outer pipes, the outer pipes are arranged on the peripheries of the straight pipe sections of the inner pipe in a one-to-one correspondence mode, the outer pipes are communicated in series through side pipelines, one end, close to the atomizing device, of one of the outer pipes is provided with the high-temperature flowing medium inlet, and the other end, close to the reduction furnace, of the outer pipe is provided with the high-temperature flowing medium outlet.
5. The polycrystalline silicon reduction furnace feeding system according to claim 4, wherein the inner pipe includes three straight pipe sections and two bent pipe sections, the three straight pipe sections being arranged in parallel, the two bent pipe sections connecting the three straight pipe sections in series; the three outer pipes are straight outer pipes and are respectively arranged on the peripheries of the three straight pipe sections in a one-to-one correspondence manner; the high-temperature flowing medium inlet is arranged at one end of the three outer pipes, the other end of the outer pipe, provided with the high-temperature flowing medium inlet, is provided with a first side pipe, the other end of the outer pipe, provided with the high-temperature flowing medium outlet, is provided with a fourth side pipe, the two ends of the middle outer pipe are respectively provided with a second side pipe and a third side pipe, the first side pipe is communicated with the second side pipe, and the third side pipe is communicated with the fourth side pipe.
6. The polycrystalline silicon reduction furnace feeding system according to claim 1 or 2, wherein the inner pipe includes one or more.
7. The polycrystalline silicon reduction furnace feeding system according to claim 1 or 2, wherein the inner pipe is an EP-grade polished pipe.
8. The polycrystalline silicon reduction furnace feed system of claim 3, wherein the outer tube is a 316L stainless steel conduit.
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| CN201921342009.5U CN211255270U (en) | 2019-08-16 | 2019-08-16 | Polycrystalline silicon reduction furnace feeding system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110436467A (en) * | 2019-08-16 | 2019-11-12 | 洛阳中硅高科技有限公司 | Polycrystalline silicon reducing furnace feeding system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110436467A (en) * | 2019-08-16 | 2019-11-12 | 洛阳中硅高科技有限公司 | Polycrystalline silicon reducing furnace feeding system |
| CN110436467B (en) * | 2019-08-16 | 2024-03-19 | 洛阳中硅高科技有限公司 | Feeding system of polysilicon reduction furnace |
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