CN211238175U - End point detection device and end point detection system - Google Patents
End point detection device and end point detection system Download PDFInfo
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- CN211238175U CN211238175U CN202020137122.6U CN202020137122U CN211238175U CN 211238175 U CN211238175 U CN 211238175U CN 202020137122 U CN202020137122 U CN 202020137122U CN 211238175 U CN211238175 U CN 211238175U
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Abstract
The end point detection device comprises a transmission assembly, a signal collector and a spectrum collector, the transmission assembly is connected with an etching cavity, the transmission assembly is provided with a transmission channel, the signal collector is arranged in the transmission channel and is connected with the signal collector, the length of the transmission channel is larger than the thickness of the cavity wall of the etching cavity, the signal collector transmits the received full spectrum signal to the spectrum collector and converts the full spectrum signal into a plurality of different monochromatic spectrum signals, excessive byproducts collected on the signal collector can be effectively reduced, and the accuracy and stability of the collected spectrum wavelength are improved.
Description
Technical Field
The utility model relates to a semiconductor sculpture technical field, concretely relates to terminal point detection device and terminal point detection system.
Background
With the development of microelectronic technology, semiconductor chip processing technology is becoming more and more strict, an etching process is one of the most complicated procedures in semiconductor processing, and the state of plasma, various process parameters and the like in the etching process are directly related to etching results. In the etching process, because the etching rate of the etching machine is inconsistent and the film thicknesses of different positions of the semiconductor are inconsistent, the etching on the surface of the chip is not uniform, and waste chips are easily caused, so that the real-time monitoring of the etching chip is very important.
The end point detection device is used for monitoring the intensity value of the emission spectral line of a reactant or a product when substances of different layers are etched in the etching process so as to judge the etching end point. Specifically, when the etching machine selects gas for etching, the products are all converted into gas. During the etching reaction, the end point detection device collects a spectrum in a wavelength range, and when the etching is completed, the spectrum disappears, as shown in fig. 1. However, in addition to gas generation, a by-product such as a polymer is also generated in the actual reaction process. When the terminal point detection device is in the warm-up experiment with the accuse separation blade, the gas that produces can be pumped away by mechanical pump etc. and discharge, and the polymer that the sculpture produced then can the adhesion in the sculpture cavity, and the polymer becomes more and more along with the increase of accuse separation blade number to influence the spectral signal intensity of collection, the unable accurate judgement sculpture condition. As shown in fig. 2, fig. 2 shows the spectral intensity collected by the endpoint detection device when a plurality of control flaps sequentially perform the warming-up experiment, and when the control flap 1 and the control flap 2 … … perform the warming-up, the spectral signal intensity of carbon collected by the endpoint detection device becomes weaker as the number of the control flaps increases.
SUMMERY OF THE UTILITY MODEL
In view of this, the embodiment of the present invention provides an endpoint detection apparatus and an endpoint detection system, which can effectively reduce the excessive byproducts collected on the signal collector, and improve the accuracy and stability of collecting the spectral wavelength.
In a first aspect, an embodiment of the present invention provides an end point detection device for detecting a full spectrum signal in an etching cavity, the device includes:
the transmission assembly is connected with the etching cavity;
the signal collector is arranged in the transmission assembly and used for receiving a full-spectrum signal in the etching cavity;
the spectrum collector is connected with the signal collector and is used for converting the full spectrum signal into a plurality of different monochromatic spectrum signals;
the transmission assembly is provided with a transmission channel, and the length of the transmission channel is greater than the thickness of the cavity wall of the etching cavity.
Optionally, the diameter of the transmission channel is 5mm-10mm, and the length of the transmission channel is 20mm-30 mm.
Optionally, the apparatus further comprises:
and the adapter flange is connected with the etching cavity and used for fixing the transmission assembly.
Optionally, the bottom of the transmission assembly is provided with a clamping table;
the adapter flange is provided with a first counter bore matched with the clamping table.
Optionally, the adaptor flange includes a boss, and the boss is connected to the etching cavity.
Optionally, the apparatus further comprises:
the transparent blocking piece is arranged at the top of the transmission channel and used for blocking the reaction polymer in the etching cavity;
and the fixed baffle is arranged between the transmission assembly and the spectrum collector and is used for fixing the signal collector.
Optionally, a second counter bore matched with the fixed baffle is arranged at the bottom of the adapter flange, and the second counter bore is larger than the first counter bore.
Optionally, the transmission component is a ceramic sleeve.
Optionally, the apparatus further comprises:
and the dust cover is arranged on the outer side of the spectrum collector and is fixedly connected with the etching cavity.
In a second aspect, the embodiment of the present invention further provides an endpoint detection system for detecting a full spectrum signal in an etching chamber, the system includes:
an endpoint detection apparatus comprising a spectrum collector for converting the full spectrum signal into a plurality of different monochromatic spectrum signals;
a processor connected to the spectrum collector for processing the monochromatic spectral signals;
wherein the end point detection device further comprises:
the transmission assembly is connected with the etching cavity and is provided with a transmission channel, and the length of the transmission channel is greater than the thickness of the cavity wall of the etching cavity;
the signal collector is arranged in the transmission channel of the transmission assembly, is connected with the spectrum collector and is used for transmitting the full-spectrum signal received from the etching cavity to the spectrum collector.
Optionally, the diameter of the transmission channel is 5mm-10mm, and the length of the transmission channel is 20mm-30 mm.
Optionally, the endpoint detection apparatus further comprises:
and the adapter flange is connected with the etching cavity and used for fixing the transmission assembly.
Optionally, the bottom of the transmission assembly is provided with a clamping table;
the adapter flange is provided with a first counter bore matched with the clamping table.
Optionally, the adaptor flange includes a boss, and the boss is connected to the etching cavity.
Optionally, the endpoint detection apparatus further comprises:
the transparent blocking piece is arranged at the top of the transmission channel and used for blocking the reaction polymer in the etching cavity;
and the fixed baffle is arranged between the transmission assembly and the spectrum collector and is used for fixing the signal collector.
Optionally, a second counter bore matched with the fixed baffle is arranged at the bottom of the adapter flange, and the second counter bore is larger than the first counter bore.
Optionally, the transmission component is a ceramic sleeve.
Optionally, the endpoint detection apparatus further comprises:
and the dust cover is arranged on the outer side of the spectrum collector and is fixedly connected with the etching cavity.
The signal collector is arranged in the transmission channel of the transmission assembly, the length of the transmission channel is larger than the wall thickness of the etching cavity, the fixed baffle is arranged between the transmission assembly and the spectrum collector, the spectrum formed in the etching cavity is transmitted to the spectrum collector by the signal collector, excessive byproducts collected on the signal collector can be effectively reduced, and the accuracy and the stability of collecting the spectrum wavelength are improved.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:
FIG. 1 is a schematic diagram of spectra collected by an endpoint detection apparatus during etching of the same layer of material;
FIG. 2 is a graph showing spectral intensities collected during a warm-up experiment using a conventional endpoint detection device;
FIG. 3 is a schematic structural diagram of the connection between the endpoint detection apparatus and the etching chamber according to the embodiment of the present invention;
fig. 4 is a schematic structural diagram of a transmission assembly according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of an adapter flange according to an embodiment of the present invention;
fig. 6 is a schematic structural view of a transmission assembly and a transfer flange according to an embodiment of the present invention;
fig. 7 is a schematic diagram of a spectrum collector converting a full spectrum signal according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of the flow rate and flow of gas in an etching chamber according to an embodiment of the present invention;
fig. 9 is a first schematic diagram of spectral intensities collected when the endpoint detection apparatus according to the embodiment of the present invention performs a warm-up experiment;
fig. 10 is a second schematic diagram of the spectral intensity collected when the end point detecting device of the embodiment of the present invention performs a warm-up experiment;
fig. 11 is a schematic structural diagram of an end point detection system according to an embodiment of the present invention.
Detailed Description
The present invention will be described below based on examples, but the present invention is not limited to only these examples. In the following detailed description of the present invention, certain specific details are set forth in detail. It will be apparent to those skilled in the art that the present invention may be practiced without these specific details. Well-known methods, procedures, components and circuits have not been described in detail so as not to obscure the present invention.
Further, those of ordinary skill in the art will appreciate that the drawings provided herein are for illustrative purposes and are not necessarily drawn to scale.
Unless the context clearly requires otherwise, throughout the description, the words "comprise", "comprising", and the like are to be construed in an inclusive sense as opposed to an exclusive or exhaustive sense; that is, what is meant is "including, but not limited to".
In the description of the present invention, it is to be understood that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In addition, in the description of the present invention, "a plurality" means two or more unless otherwise specified.
Since each gas has its own unique spectrum. As a gas increases or decreases, the spectral intensity of the gas also increases or decreases. In this embodiment, the semiconductor chip reacts with the etching gas during etching, and then collects the light intensity of the emission line of the reactant or the product. When the etching is completed, the collected spectral intensity changes with the content of the reactant or the product, so that the end point of the etching of the substrate surface can be determined by detecting the spectral intensity change of the gas.
Fig. 3 is a schematic structural diagram of the end point detecting device of the present embodiment. As shown in fig. 3, the end point detection device a includes an adaptor flange 1, a transmission assembly 2, a signal collector 3, a spectrum collector 4, and a fixed baffle 5. The end point detection device A is connected with the etching cavity B, the etching gas reacts with the surface of the substrate by introducing the gas required by etching into the etching cavity B, finally, a reactant capable of emitting light rays in a preset wavelength range is generated, the signal collector 3 collects the spectrum of the reactant to form a full spectrum signal, the full spectrum signal is transmitted to the spectrum collector 4 for light splitting processing, and finally, the full spectrum signal is converted into a monochromatic spectrum signal to be transmitted to a subsequent processor C (not shown in the figure) for further processing, so that the etching condition of the current substrate surface is detected and obtained, and then the etching rate in the etching cavity B is adjusted according to the etching condition, so that the etching effect is ensured.
Specifically, the etching chamber B includes an opening 11, and the opening 11 has a fixed size and structure. The transmission assembly 2 is arranged in the opening 11 and is fixedly connected with the etching cavity B through the adapter flange 1, so that a transmission channel 21 in the transmission assembly 2 is communicated with the etching cavity B. In this embodiment, the etching chamber B includes an upper electrode, an ICP radio frequency unit, an RF radio frequency unit, a lower electrode, and a temperature control system. In this embodiment, a gas required for etching is introduced into the etching chamber B, the etching gas exposed in the electron region forms a plasma, the plasma reacts with the surface of the workpiece by acceleration of the electric field, chemical bonds of the semiconductor material in the substrate pattern region are broken, and volatile substances are generated with the etching gas and are separated from the substrate in a gas form, and the volatile substances can emit a spectrum with a certain wavelength.
The transmission assembly 2 is arranged in the opening 11 and is fixedly connected with the etching cavity B through the adapter flange 1. The transmission component 2 is provided with a transmission channel 21, the length of the transmission channel 21 is larger than the thickness of the etching cavity B, and the width of the transmission channel 21 is smaller than the width of the opening 11, so that an elongated channel is formed. The opening of the transmission channel 21 is small, the cross section of the transmission channel 21 can be basically vertical, when the polymer flows downwards from the upper part of the transmission channel 21, the polymer can stagger the opening of the transmission channel 21 to directly flow to the inner wall of the etching cavity, so that the polymer can be effectively reduced from being carried out in the transmission channel, excessive byproducts accumulated on the fixed baffle 5 are reduced, the accuracy and the stability of collecting spectral wavelength are improved, and the etching condition and the etching end point of the substrate surface can be accurately judged. The length of the transmission channel 21 is greater than the thickness of the cavity wall of the etching cavity B, that is, the length of the transmission assembly 2 is greater than the thickness of the cavity wall of the etching cavity B. In this embodiment, the length of the transmission assembly 2 can be made according to the actual required length of the transmission channel 21. The transmission channel 21 can be a channel with any cross section such as a circular channel, a square channel, a triangular channel and the like. Preferably, the transmission channel 21 is a circular channel. The diameter of the transmission channel 21 is 5-10mm, and the length is 20-30 mm.
The transmission assembly 2 comprises a clamping table 22, and the clamping table 22 is arranged on one side far away from the etching cavity B. In the present embodiment, the cassette 22 forms the cross section of the transfer unit 2 into a substantially convex shape. That is, the transmission assembly 2 includes a first portion 23 and a second portion 22 (i.e., the chuck 22), and the cross-sectional area of the second portion 22 is larger than that of the first portion 23, so that the transmission assembly 2 is formed in a sleeve structure having a shoulder, as shown in fig. 4. The clamping table 22 is used for being matched, installed and connected with the adapter flange 1. The transmission component 2 can be made of metal materials, ceramic materials and the like. Preferably, the transmission component 2 is made of ceramic material. The ceramic material has the characteristics of high temperature resistance, corrosion resistance, wear resistance, small thermal deformation and the like, can prolong the service life of the transmission assembly 2, and avoids the corrosion of the transmission assembly 2 by-products in the etching cavity B.
The adapter flange 1 is respectively connected with the transmission assembly 2 and the etching cavity B. In particular, the adapter flange 1 has a first counter bore 12 adapted to the transmission assembly 2. That is, the first counterbore 12 is sized substantially the same as the outer dimensions of the transmission assembly 2. The first portion a of the first counterbore 12 is the same size as the first portion 23 of the transmission assembly 2 and the second portion b of the first counterbore 12 is the same size as the second portion 22 of the transmission assembly 2 so that the first counterbore 12 and the transmission assembly 2 can be interference fit. Correspondingly, the adaptor flange 1 further includes a second counterbore 13, and the second counterbore 13 is larger than the first counterbore 12 and is disposed on a side away from the etching chamber B, as shown in fig. 5 and 6. The second counter bore 13 is matched with the fixed baffle 5 for installing the fixed baffle 5. Preferably, the second counterbore 13 is coaxial with the first counterbore 12, and when the transparent baffle 6 is not arranged at the front end of the transmission channel 21, the fixed baffle 5 can be made to shield the first counterbore 12 so as to prevent byproducts generated by etching from attaching to the spectrum collector 4. Besides, the second counter bore 13 is coaxial with the first counter bore 12, so that the processing difficulty of the adapter flange 1 can be reduced.
Besides, the outer contour of the adapter flange 1 may be configured as a step-like structure, which is adapted to the opening 11 of the etching chamber B. In this embodiment, the opening 11 of the etching chamber B has a step. Correspondingly, the outer contour of the adapter flange 1 is provided with at least one projection 14, and the projection 14 is connected with the step of the opening 11 to limit the adapter flange 1 from moving into the etching chamber B. Further, when the adapter flange 1 is installed in the opening 11, the adapter flange 1 may be further fixedly connected to the etching chamber B through bolts and other members. The transmission assembly 2 of this embodiment is connected with the etching chamber B through the adapter flange 1, and the long and thin transmission channel 21 is arranged in the transmission assembly 2, so that the length of the transmission channel 21 is greater than the length of the opening, and the width of the transmission channel is smaller than the width of the opening, thereby reducing the attachment of byproducts generated by etching in the transmission channel 21, and improving the accuracy of the signal collector 3 for receiving full-spectrum signals.
The signal collector 3 is disposed in the transmission passage 21 of the transmission member 2. One end of the signal collector 3 is close to the etching cavity B, and the other end is connected with the spectrum collector 4. The signal collector 3 is used for receiving a full spectrum signal emitted by a reactant generated by etching, and sending the full spectrum signal to the spectrum collector 4 for light splitting processing. The signal collector 3 may be a quartz material with high sensitivity and low radiation for receiving spectral signals.
The fixed baffle 5 is arranged between the transmission component 2 and the spectrum collector 4 and is used for shielding the transmission channel 21 so as to prevent byproducts generated by etching from adhering to the spectrum collector 4 and influencing the collection of the spectrum signals. The fixing flap 5 is further provided with an exit hole 51 (not shown in the figure) for connecting the tail signal line of the signal collector 3 with the spectrum collector 4 after passing through the fixing flap 5. Preferably, the fixing baffle 5 is made of quartz, and has the performances of high temperature resistance, extremely small thermal expansion coefficient, good chemical stability and the like. In addition, the fixing baffle 5 is also used for fixing the signal collector 3, so as to prevent the signal collector 3 from shaking in the transmission channel 21 and affecting the reception of the full spectrum signal. In other alternative implementations, when the transmission channel 21 is small enough, that is, the signal collector 3 does not shake freely in the transmission channel 21, the end point detection device a may be fixed without the fixing baffle 5.
The spectrum collector 4 is connected to the signal collector 3, a full spectrum signal in a predetermined range emitted by the plasma in the etching chamber B passes through the transmission channel 21 (fine channel) and enters the spectrum collector 4 to be optically split by the grating, and then lights with different wavelengths obtained by splitting are irradiated to different positions of a charge-coupled device (CCD), so as to obtain monochromatic spectrum signals with different wavelengths, as shown in fig. 7. In this embodiment, the spectrum collector 4 may be an existing spectrometer, such as a CCD direct-reading spectrometer. A CCD (charge-coupled device) is a special semiconductor material, which is composed of a large number of individual photodiodes, typically arranged in a matrix, similar to a camera film, as shown in fig. 7. In the embodiment, the light with the spectrum from 200nm to 800nm of the full spectrum emitted by the plasma in the etching cavity B is split, the pixel of the CCD is 1024 x 128, and the accurate optical resolution less than 2.0nm can be obtained.
The end point detection device A further comprises a transparent blocking sheet 6 and a dust cover 7. The transparent blocking sheet 6 is arranged in the etching cavity B, and the size of the transparent blocking sheet 6 is larger than or equal to that of the transmission channel 21 and is used for covering the end part of the transmission channel 21. The transparent blocking sheet 6 can be used for blocking by-products generated by etching, and the full-spectrum signals collected by the signal collector 3 are prevented from being influenced. The transparent baffle 6 can be made of transparent quartz glass. The transparent quartz glass has excellent transmission performance and corrosion resistance.
The dust cover 7 is fixedly connected with the etching cavity B, and the dust cover and the etching cavity B form a closed accommodating cavity 71. Specifically, the spectrum collector 4 is disposed in the accommodating cavity 71 to prevent dust from falling into the spectrum collector 4. The dust cover 7 and the etching cavity B can be fixedly connected through connecting pieces such as bolts. In other alternative implementations, the dust cover 7 and the adapter flange 1 are coaxial with the mounting hole connected with the etching cavity B, so that the dust cover 7 and the adapter flange 1 can be fixedly connected at corresponding positions through a bolt connector.
The bottom of the dust cover 7 is also provided with an optical fiber connection port 72. The optical fiber connected with the tail of the spectrum collector 4 penetrates out of the optical fiber connecting port 72 to be connected with the processor C, and the spectrum collector 4 converts the optical signal into an electric signal and transmits the electric signal to the processor C through the optical fiber for further processing. In other alternatives, the spectrum collector 4 may also be fixedly connected with a dust cover 7 for limiting the shaking of the spectrum collector 4.
In this embodiment, the etching chamber B can deliver various etching gases into the etching chamber B through a gas supply system. The gas supply system accurately controls the flow speed and the flow of gas through a pressure controller and a mass flow controller. FIG. 8 is a schematic diagram of the flow rate and flow rate of the gas in the etching chamber B. The gas supply system may include a gas supply bottle, gas delivery lines, a control system, a mixing unit, and the like. Meanwhile, when the etching cavity B performs etching work, the inside of the etching cavity B is in a vacuum environment. The end point detection device A also comprises a pre-vacuum chamber, and an isolation door is arranged between the pre-vacuum chamber and the etching cavity B. When the vacuum degree of the pre-vacuum chamber reaches a set value, the isolating door can be opened, and the control blocking pieces are transmitted to the etching cavity B for etching. The vacuum of the etching cavity B is provided by a mechanical pump and a molecular pump together, and the gas generated by the reaction of the etching cavity B is also exhausted by the mechanical pump and the like.
Fig. 9 and 10 are schematic diagrams of spectral intensities collected when the end-point detection device of the present embodiment performs a warm-up experiment. As shown in fig. 9 and 10, the spectral intensities collected by the 1 st warming control barrier to the 25 th warming control barrier are substantially equal to the spectral intensities continuously collected by the 125 th warming control barrier to the 150 th warming control barrier. Specifically, the spectral intensity of the 1 st control barrier is 1300, the spectral intensity of the 25 th control barrier is 1400, the spectral intensities continuously collected by the 125 th to 150 th warming control barriers are about 1300, and the variation range is small. The end point detection device a of the present example was subjected to a warm-up experiment by continuously using 6000 control masks, and it was found that the spectrum signal collected by the spectrum collector 4 was not attenuated. That is, the end point detecting device a of the present embodiment can avoid excessive by-products from being accumulated on the surface of the signal collector 3 by installing the signal collector 3 in the elongated transmission channel 21, and can accurately and stably collect the spectral wavelength, thereby improving the etching productivity and yield. The control baffle plate is an experimental plate coated with photoresist on the surface of the semiconductor substrate and used for warming up.
The signal collector is arranged in the transmission channel of the transmission assembly, the length of the transmission channel is larger than the wall thickness of the etching cavity, the fixed baffle is arranged between the transmission assembly and the spectrum collector, the spectrum formed in the etching cavity is transmitted to the spectrum collector by the signal collector, excessive byproducts collected on the signal collector can be effectively reduced, and the accuracy and the stability of collecting the spectrum wavelength are improved.
Fig. 11 is a schematic structural diagram of an endpoint detection system according to another embodiment. As shown in fig. 11, the endpoint detection system includes an endpoint detection device a and a processor C. The end point detection device A and the processor C are connected through optical fibers to realize the transmission of the spectrum signals. The end point detecting device a has the same structure as the end point detecting device a of the previous embodiment. The processor C stores various end point detection algorithms and is used for calculating the real-time received monochromatic spectrum signals through the end point detection algorithms to obtain the current etching condition in the etching cavity B. In this embodiment, the processor C may be a computer, a tablet computer, an industrial personal computer, or the like.
The spectrum emitted by plasma in an etching cavity B of an end point detection device A is converged to a transmission channel 21 through a sighting telescope, a signal collector 3 collects full spectrum signals and transmits the full spectrum signals to a spectrum collector 4, after the full spectrum signals pass through an optical light splitting grating in the spectrum collector 4, monochromatic spectrum signals with different wavelengths irradiate different positions of a CCD (charge coupled device), then the monochromatic spectrum signals with different wavelengths are converted into electric signals and transmitted to a processor C through optical fibers, the processor C calculates the current spectral intensity according to a stored preset end point detection algorithm, and then calculates and obtains etching end points of different layers and the etching condition of the layer in the whole etching process according to the change of the spectral intensity.
In this embodiment, the transmission channel 21 of the signal collector 3 in the etching chamber B is 5mm-10mm, and the distance from the fixed baffle 5 to the etching chamber B is 20mm-30mm, that is, the length of the transmission channel 21 is 20mm-30 mm. By arranging the signal collector 3 in the elongated transmission channel 21, it is possible to accurately and stably collect a spectrum while avoiding excessive accumulation of by-products on the surface of the signal collector.
The signal collector is arranged in the transmission channel of the transmission assembly, the length of the transmission channel is larger than the wall thickness of the etching cavity, the fixed baffle is arranged between the transmission assembly and the spectrum collector, the spectrum formed in the etching cavity is transmitted to the spectrum collector by the signal collector, excessive byproducts collected on the signal collector can be effectively reduced, and the accuracy and the stability of collecting the spectrum wavelength are improved.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included within the protection scope of the present invention.
Claims (18)
1. An endpoint detection apparatus for detecting a full spectrum signal within an etch chamber, the apparatus comprising:
the transmission assembly is connected with the etching cavity;
the signal collector is arranged in the transmission assembly and used for receiving a full-spectrum signal in the etching cavity;
the spectrum collector is connected with the signal collector and is used for converting the full spectrum signal into a plurality of different monochromatic spectrum signals;
the transmission assembly is provided with a transmission channel, and the length of the transmission channel is greater than the thickness of the cavity wall of the etching cavity.
2. The end-point detection device of claim 1, wherein the diameter of the transmission channel is 5mm to 10mm and the length of the transmission channel is 20mm to 30 mm.
3. The endpoint detection apparatus of claim 1, further comprising:
and the adapter flange is connected with the etching cavity and used for fixing the transmission assembly.
4. The endpoint detection apparatus of claim 3, wherein the transport assembly has a chuck at a bottom thereof;
the adapter flange is provided with a first counter bore matched with the clamping table.
5. The end-point detection device of claim 3, wherein the adaptor flange comprises a boss, the boss being coupled to the etch chamber.
6. The endpoint detection apparatus of claim 4, further comprising:
the transparent blocking piece is arranged at the top of the transmission channel and used for blocking the reaction polymer in the etching cavity;
and the fixed baffle is arranged between the transmission assembly and the spectrum collector and is used for fixing the signal collector.
7. The end point detection device of claim 6, wherein a second counter bore adapted to the fixed baffle is formed in the bottom of the adapter flange, and the second counter bore is larger than the first counter bore.
8. The end-point detection device of claim 4, wherein the transmission component is a ceramic sleeve.
9. The endpoint detection apparatus of claim 1, further comprising:
and the dust cover is arranged on the outer side of the spectrum collector and is fixedly connected with the etching cavity.
10. An endpoint detection system for detecting a full spectrum signal within an etch chamber, the system comprising:
an endpoint detection apparatus comprising a spectrum collector for converting the full spectrum signal into a plurality of different monochromatic spectrum signals;
a processor connected to the spectrum collector for processing the monochromatic spectral signals;
wherein the end point detection device further comprises:
the transmission assembly is connected with the etching cavity and is provided with a transmission channel, and the length of the transmission channel is greater than the thickness of the cavity wall of the etching cavity;
the signal collector is arranged in the transmission channel of the transmission assembly, is connected with the spectrum collector and is used for transmitting the full-spectrum signal received from the etching cavity to the spectrum collector.
11. The endpoint detection system of claim 10, wherein the diameter of the transmission channel is 5mm to 10mm and the length of the transmission channel is 20mm to 30 mm.
12. The endpoint detection system of claim 10, wherein the endpoint detection device further comprises:
and the adapter flange is connected with the etching cavity and used for fixing the transmission assembly.
13. The endpoint detection system of claim 12, wherein the transport assembly has a chuck at a bottom thereof;
the adapter flange is provided with a first counter bore matched with the clamping table.
14. The endpoint detection system of claim 12, wherein the adaptor flange comprises a boss, the boss being coupled to the etch chamber.
15. The endpoint detection system of claim 13, wherein the endpoint detection device further comprises:
the transparent blocking piece is arranged at the top of the transmission channel and used for blocking the reaction polymer in the etching cavity;
and the fixed baffle is arranged between the transmission assembly and the spectrum collector and is used for fixing the signal collector.
16. The endpoint detection system of claim 15, wherein a second counter bore adapted to the fixed stop is formed in the bottom of the adapter flange, and the second counter bore is larger than the first counter bore.
17. The endpoint detection system of claim 13, wherein the transmission component is a ceramic sleeve.
18. The endpoint detection system of claim 10, wherein the endpoint detection device further comprises:
and the dust cover is arranged on the outer side of the spectrum collector and is fixedly connected with the etching cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202020137122.6U CN211238175U (en) | 2020-01-21 | 2020-01-21 | End point detection device and end point detection system |
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| CN202020137122.6U CN211238175U (en) | 2020-01-21 | 2020-01-21 | End point detection device and end point detection system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024103895A1 (en) * | 2022-11-16 | 2024-05-23 | 江苏鲁汶仪器股份有限公司 | Endpoint detection apparatus and ion beam etching system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024103895A1 (en) * | 2022-11-16 | 2024-05-23 | 江苏鲁汶仪器股份有限公司 | Endpoint detection apparatus and ion beam etching system |
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