CN211119162U - High beam and low beam integrated vehicle headlight - Google Patents

Abstract

The utility model discloses an integrative vehicle headlamps of far and near light, including the heat dissipation support, divide and locate the nearly light source group and the distance light source group of both sides about the heat dissipation support, the nearly light reflector that corresponds with nearly light source group, the distance light reflector that corresponds with distance light source group, nearly light source group includes first exciting light unit and first wavelength conversion unit, first exciting light unit includes first laser source unit, first L ED light source unit and the control switch who is connected with first laser source unit, the position of first wavelength conversion unit corresponds with the focus of nearly light reflector, distance light source group includes second exciting light unit and second wavelength conversion unit, second exciting light unit includes second laser source unit and second L ED light source unit, the position of second wavelength conversion unit corresponds with the focus of distance light reflector.

Description

High beam and low beam integrated vehicle headlight

Technical Field

The utility model relates to the field of lighting technology, concretely relates to integrative vehicle headlamps of far and near light.

Background

With the development of semiconductor technology, L ED (L light Emitting Diode) light source is gradually replacing traditional incandescent lamp and energy saving lamp due to its advantages of high efficiency, energy saving, environmental protection, low cost and long life, and becomes a general lighting source.

In the conventional L ED automobile headlamp, a L ED light source is positioned at the focus of a lamp reflector, and light beams emitted by a L ED light source are collected by the lamp reflector and distributed by a rear-end optical system (comprising a baffle plate, a lens and the like) to finally project required far and near light field distribution.

SUMMERY OF THE UTILITY MODEL

The utility model discloses to the problem that exists among the prior art, provide one kind and can effectively improve distance light beam and passing light beam illuminating effect's integrative vehicle headlamps of distance light and passing light.

In order to solve the technical problem, the utility model provides an integrative vehicle headlamps of far and near light, including the heat dissipation support, divide locate near-distance light source group and far-distance light source group of both sides about the heat dissipation support, with near-distance light reflection bowl that near-distance light source group corresponds, with far-distance light reflection bowl that far-distance light source group corresponds, locate the movable light screen and the lens of heat dissipation support front end and locate the fin group of heat dissipation support rear end, near-distance light source group includes first exciting light unit and first wavelength conversion unit, first exciting light unit includes first laser source unit, first L ED light source unit and with the control switch that first laser source unit is connected, the position of first wavelength conversion unit with near-distance light reflection bowl's focus corresponds, the laser beam that first laser source unit launched and the light beam that first laser source unit launched throw respectively to first exciting light conversion unit, far-distance light group includes second exciting light unit and second wavelength conversion unit, second laser source unit includes second exciting light unit and second L ED light source unit, the light source emission unit launches the wavelength L with the second laser source reflection unit, the second laser source emission wavelength conversion unit is corresponding to the second laser source.

Furthermore, the first laser source unit and the first wavelength conversion unit are respectively arranged on two sides of the low-beam light reflecting bowl, and a first light-passing part for transmitting the laser beam is arranged on the low-beam light reflecting bowl; the second laser source unit and the second wavelength conversion unit are respectively arranged on two sides of the high beam light reflecting bowl, and a second light through part for transmitting the laser beam is arranged on the high beam light reflecting bowl.

Further, the first laser source unit comprises one or more laser sources, and the first light passing part is provided with one or more laser sources; the second laser light source unit includes one or more laser light sources, and the second laser light source unit is provided with one or more laser light sources.

Further, the first L ED light source unit and the second L ED light source unit each include a substrate and at least one L ED chip, the first wavelength conversion unit and the second wavelength conversion unit each include at least one phosphor layer, the phosphor layers are disposed on the L ED chips or on the substrate, one phosphor layer corresponds to each L ED chip above, and the phosphor layers are disposed on the substrate below.

Furthermore, the low-beam light reflecting bowl is a curved mirror, the first wavelength conversion unit is located at a focus of the curved mirror, the L ED chip and the phosphor layer in the first L ED light source unit are respectively provided with one, and the laser beam is projected to the center of the upper surface of the phosphor layer.

Furthermore, the number of L ED chips and the number of phosphor layers in the first L ED light source unit are multiple, the phosphor layers are closely arranged and located at the focal point of the curved mirror, one phosphor layer corresponds to the upper side of each L ED chip, a reflection interface is arranged between the L ED chip and the substrate, and the laser beam is projected onto each phosphor layer or one of the phosphor layers.

Furthermore, the near light reflector is formed by splicing a plurality of curved mirrors, L ED chips and fluorescent powder layers in the first L ED light source unit are respectively provided with a plurality of gaps, the fluorescent powder layers are distributed in a clearance mode, each fluorescent powder layer is located at the focus of one corresponding curved mirror, each fluorescent powder layer corresponds to the upper portion of each L ED chip, a reflection interface is arranged between each L ED chip and the substrate, and laser beams are projected onto each fluorescent powder layer or one of the fluorescent powder layers.

Furthermore, the high beam reflector is a curved mirror, the second wavelength conversion unit is located at a focus of the curved mirror, the L ED chip and the phosphor layer in the second L ED light source unit are respectively provided with one, and the laser beam is projected to the center of the upper surface of the phosphor layer.

Furthermore, the number of L ED chips and the number of phosphor layers in the second L ED light source unit are multiple, the phosphor layers are closely arranged and located at the focal point of the curved mirror, one phosphor layer corresponds to the upper part of each L ED chip, a reflection interface is arranged between the L ED chip and the substrate, and the laser beam is projected onto each phosphor layer or one of the phosphor layers.

Furthermore, the high beam reflector is formed by splicing a plurality of curved mirrors, the L ED chips and the fluorescent powder layer in the second L ED light source unit are respectively provided with a plurality of fluorescent powder layers in a gap distribution manner, each fluorescent powder layer is positioned at the focus of a corresponding curved mirror, each fluorescent powder layer corresponds to one upper part of the L ED chip, a reflection interface is arranged between the L ED chip and the substrate, and the laser beam is projected onto each fluorescent powder layer or one of the fluorescent powder layers.

The utility model provides an integrative vehicle headlamps of far and near light, including the heat dissipation support, locate separately the heat dissipation support upper and lower both sides near light source group and distance light source group, with the near light reflector that near light source group corresponds, with the distance light reflector that distance light source group corresponds, locate but the movable light screen and the lens of heat dissipation support front end and locate the heat dissipation fin group of heat dissipation support rear end, near light source group includes first exciting light unit and first wavelength conversion unit, first exciting light unit includes first laser source unit, first L ED light source unit and with the control switch that first laser source unit is connected, the position of first wavelength conversion unit with near light bowl reflective focus corresponds, the laser beam of first laser source unit transmission and the light beam of first L ED light source unit transmission respectively to first wavelength conversion unit on, far light source group includes second exciting light unit and second wavelength conversion unit, the second laser source unit includes second laser source unit and second L ED light source unit transmission, the second laser source unit transmission light source unit and first far light source light reflection light source unit light reflection light beam can be used for the luminous intensity improves the luminous efficiency of the light source and the luminous efficiency of the light source, thereby the luminous efficiency of the light source is improved greatly, the luminous efficiency of the high light source is improved greatly, the luminous efficiency of the high-speed light source is improved by the high-speed light source unit, the high-speed vehicle headlamp, the high-speed light source unit, the high-speed light source light.

Drawings

Fig. 1 is a schematic structural diagram of an embodiment of a high-beam and low-beam integrated vehicle headlamp according to the present invention;

FIG. 2 is a schematic view of one embodiment of the present invention in which a laser beam is projected onto the upper surface of a wavelength conversion unit;

fig. 3 is a schematic structural diagram of an embodiment of a wavelength conversion unit according to the present invention;

fig. 4 is a schematic structural diagram of another embodiment of the wavelength conversion unit of the present invention;

fig. 5 is a schematic structural view of an embodiment of a low beam reflector comprising a plurality of curved mirrors according to the present invention.

The LED light source comprises a heat dissipation support 10, a 211, a laser source unit, a 212, a first L ED light source unit, a 213, a focusing unit, a 214, a substrate, 215, L ED chips, 216, a reflection interface, 217, a first laser source, 220, a wavelength conversion unit, 221, a fluorescent powder layer, 210, a first L ED light source, 311, a laser source unit, 312, a second L ED light source unit, 317, a second laser source, 320, a second wavelength conversion unit, 40, a low-beam light reflecting bowl, 410, a first light-passing part, 420, a curved mirror, 50, a high-beam light reflecting bowl, 510, a second light-passing part, 60, a movable light shielding plate, 70, a lens, 80 and a heat dissipation sheet set.

Detailed Description

The present invention will be described in detail with reference to the accompanying drawings:

as shown in fig. 1-3, the present invention provides a vehicle headlamp integrating far and near lights, comprising a heat dissipation bracket 10, a low beam light source group and a high beam light source group separately disposed at upper and lower sides of the heat dissipation bracket 10, a low beam light reflection bowl 40 corresponding to the low beam light source group, a high beam light reflection bowl 50 corresponding to the high beam light source group, a movable light shielding plate 60 and a lens 70 disposed at a front end of the heat dissipation bracket 10, and a heat dissipation sheet group 80 disposed at a rear end of the heat dissipation bracket 10, wherein the low beam light source group comprises a first excitation light unit and a first wavelength conversion unit 220, the first excitation light unit comprises a first laser source unit 211, a first L ED light source unit 212, and a control switch (not shown) connected to the first laser source unit 211, the first wavelength conversion unit 220 is disposed corresponding to a focal point of the low beam light reflection bowl 40, a laser beam emitted by the first laser source unit 211 and a light beam emitted by the first L light source unit 212 are projected onto the first wavelength conversion unit 220, the first laser source unit 211 and a laser beam emitted by the first high beam light source unit 39311 and a second high beam conversion unit 312, the second high beam light source unit 312 is disposed at a same time, the high beam conversion unit 311 and a second high beam conversion unit 34 is disposed on the high beam light source unit 110, the high beam conversion unit 110 and a high beam conversion unit is disposed at a high beam light source unit 34, the high beam center of the high beam light source unit 34, the high beam conversion unit 34 and a high beam light source unit 34.

Preferably, passing light reflector 40 and distance light reflector 50 are the curved surface structure, distance light reflector 50's camber is less than distance light reflector 50's camber, and when practical application, the facula of passing light beam is wide more than high ellipse, and consequently the passing light reflector 40 camber that corresponds is less, and the facula of distance light beam is high more than wide ellipse, and consequently the distance light reflector 50 camber that corresponds is great.

Preferably, the first laser source unit 211 and the first wavelength conversion unit 220 are respectively disposed at two sides of the low-beam light reflecting bowl 40, the low-beam light reflecting bowl 40 is provided with a first light passing part 410 for passing through the laser beam, specifically, the number of the first light passing part 410 may be one or more, which may be a through hole, or a through hole provided with a transparent member capable of passing through the laser beam, or a transparent member capable of passing through the laser beam and integrated with the low-beam light reflecting bowl 40, and the transparent member capable of passing through the laser beam may be a transparent plate having an optical filter, which transmits the laser beam and reflects the fluorescence, i.e., white light, emitted by the first wavelength conversion unit 220, so as to prevent the fluorescence emitted by the first wavelength conversion unit 220 from leaking out of the first light passing part 410, the first light passing part 410 is used for guiding the laser beam to the first wavelength conversion unit 220, which may be elliptical, circular or other shape, and has a size adapted to the diameter of the laser beam, so that the first laser source unit 211 and the first wavelength conversion unit 211 may be flexibly mounted on the other side of the first wavelength conversion unit 220 according to the space conditions of the low-beam reflecting bowl 40, and the first light source unit 211 may be mounted to the first light reflection bowl, and the first light conversion device L.

Preferably, the first laser source unit 211 includes one or more first laser sources 217, which are designed according to the power of output light, particularly the central illumination, and of course, a plurality of first laser sources 217 may be disposed in the first laser source unit 211, and the number of the first laser sources 217 currently operating is selected according to the requirement during use, for example, the selection is performed through a switch or other elements, so that the convenience of use and the general performance can be further improved. The number of the first light-passing parts 410 is one or more, and specifically, when there is only one first laser source 217, there is also one first light-passing part 410; when the number of the first laser sources 217 is plural, that is, equal to or greater than 2, the number of the first light-passing parts 410 may be only one, and at this time, the light beams emitted by the plural first laser sources 217 share one first light-passing part 410; of course, the first light-passing part 410 may be provided in plurality, corresponding to the first laser sources 217 one by one, and each first light-passing part 410 is used for guiding the laser beam emitted by the corresponding first laser source 217 to the first wavelength conversion unit 220. Meanwhile, the second laser source unit 311 also includes one or more second laser sources 317, which are designed according to the power of output light, particularly the central illumination, and of course, a plurality of second laser sources 317 may be disposed in the second laser source unit 311, and the number of currently operating second laser sources 317 is selected according to the need during use, for example, by selecting through a switch or other elements, so that the convenience of use and the general performance can be further improved. The number of the second laser beam passing portions 510 is one or more, and specifically, when there is only one second laser beam source 317, there is also one second laser beam passing portion 510; when the number of the second laser sources 317 is multiple, that is, greater than or equal to 2, the number of the second light passing parts 510 may be only one, and at this time, the light beams emitted by the multiple second laser sources 317 share one second light passing part 510; of course, the second laser beam passing portion 510 may be provided in plural, one-to-one correspondence with the laser light sources, and each of the second laser beam passing portions 510 is used for guiding the laser beam emitted from the corresponding second laser light source 317 to the second wavelength conversion unit 320. In this embodiment, the second laser source 317 is preferably a semiconductor laser, that is, a laser diode, and has the characteristics of small size and long service life, so that the size of the device is further reduced, and the service life and stability are improved. The semiconductor laser used here may be an element having 1 light emitting point on 1 chip, or may be an element having a plurality of light emitting points on 1 chip.

Preferably, the first laser source unit 211 and/or the second laser source unit 311 further include one or a combination of two or more of a collimating unit (not shown), a beam angle changing unit (not shown), and a focusing unit 213, and the collimating unit, the beam angle changing unit, and the focusing unit 213 are disposed along the optical path. The collimating unit may be disposed at an outlet of the first laser source 217 or the second laser source 317, and typically employs a collimating lens or other beam collimating element for converting the output laser light into collimated parallel light, so as to further improve the collimation of the laser beam. The beam angle changing unit is used for deflecting the laser beam to change the advancing direction of the laser beam, so that the whole system is compact in structure, the beam angle changing unit can adopt a plane reflector or a curved reflector, can also adopt a metal film or a dielectric film and the like, the same effect can be achieved, and certainly, when the using space is not limited, the angle of the semiconductor laser can be directly adjusted to save the beam angle changing unit, so that the cost is reduced. The focusing unit 213 may adopt a focusing lens or other focusing elements for converging the laser beam to be better projected onto the first wavelength conversion unit 220 through the first light passing part 410 or onto the second wavelength conversion unit 320 through the second light passing part 510, and may also form light of a proper size when the laser beam is incident on the first wavelength conversion unit 220 or the second wavelength conversion unit 320 by adjusting a curved surface of the focusing unit 213, as shown in fig. 1, only the focusing unit 213 is used in the first laser source unit 211 and the second laser source unit 311, and one of the collimating unit, the beam angle changing unit, and the focusing unit 213 may be used alone or two or three thereof may be selected for combination use as needed in actual use, and the positions of the three may be arranged according to the use space need as long as it is ensured that the laser beam can be projected onto the first wavelength conversion unit 220 through the first light passing part 410 or pass through the second light passing part 510 to ensure that the laser beam is incident on the first wavelength conversion unit 220 or the second wavelength conversion 510 are projected onto the second wavelength converting element 320.

Preferably, each of the first L ED light source unit 212 and the second L ED light source unit 312 includes a substrate 214 and at least one L ED chip 215, each of the first wavelength conversion unit 220 and the second wavelength conversion unit 320 includes at least one phosphor layer 221, the phosphor layer 221 is disposed on the L ED chip 215 or on the substrate 214, one phosphor layer 221 is disposed above each L ED chip 215, and the other phosphor layer 221 is disposed below each L ED chip 215 on the substrate 214.

Preferably, the low-beam light reflecting bowl 40 is a curved mirror, the first wavelength conversion unit 220 is located at a focal point of the curved mirror, the L ED chip 215 and the phosphor layer 221 are respectively provided with one, and the laser beam is projected to a center of an upper surface of the phosphor layer 221. as shown in fig. 2, the phosphor layer 221 is located above the L ED chip 215, and below the L ED chip 215 is connected to the substrate 214 through a reflective interface 216, specifically, the substrate 214 has two functions, namely, on one hand, heat generated by the L ED chip 215 is conducted downwards, on the other hand, an electrode is arranged on the substrate 214 and connected to an external power supply for supplying power to the L ED chip 215.

Preferably, the near-light reflector 40 is a curved mirror, the L ED chips 215 and the phosphor layers 221 in the first L ED light source unit 212 are all multiple in number, multiple phosphor layers 221 are closely arranged and located at the focal point of the curved mirror 420, one phosphor layer 221 corresponds to each of the L ED chips 215, a reflective interface 216 is disposed between the L ED chips 215 and the substrate 214, the laser beams are projected onto each phosphor layer 221 or onto one of the phosphor layers 221, specifically, the L ED chips 215 and the phosphor layers 221 are all multiple in number and the same in number, that is, L ED chips 215 and the phosphor layers 221 correspond one to one another, the laser beams are projected onto one of the phosphor layers 221, as shown in fig. 3, three laser beams are respectively disposed on the L ED chips 215 and the phosphor layers 221, of course, 2 or more than 4 are disposed on the focal point of the reflector 40 along a straight line, the laser beams are projected onto the upper surface of the second phosphor layer 221, the upper surface of the phosphor layers 221 may also be projected onto the other phosphor layers 221, the surface of the phosphor layers 221, the phosphor layers 221 in a heat-resistant area, the phosphor layers 221 and the phosphor layers 221 are generally disposed under the area, the area where the phosphor layers 221 that the phosphor layers 215 and the phosphor layers 221 are all the phosphor layers 221 that the phosphor layers 221 are increased in number of the phosphor layers is increased, and the phosphor layers 221, thus the phosphor layers 221 is increased, the phosphor layers increased by increasing the light field of the phosphor layers 215, and the phosphor layers 221, and the phosphor layers 221.

Preferably, the low beam reflector 40 is formed by splicing a plurality of curved mirrors 420, a plurality of L ED chips 215 and phosphor layers 221 in the first L ED light source unit 212 are respectively provided, and a plurality of phosphor layers 221 are distributed in a gap manner, each phosphor layer 221 is located at a focus of a corresponding one of the curved mirrors 420, a phosphor layer 221 is located above each L ED chip 215, a reflective interface 216 is provided between each L ED chip 215 and the substrate 214, the laser beam is projected onto each phosphor layer 221 or onto one of the phosphor layers 221, specifically, the low beam reflector 40 is formed by splicing a plurality of curved mirrors 420, each curved mirror 420 corresponds to one focus, the surface shape of the curved mirror 420 may be a paraboloid, an ellipsoid or other thermal resistance, each phosphor layer 221 is located at a focus of a corresponding one of the curved mirror 420, the number of the phosphor layers 221 may be the same as that of the curved mirrors 420, or may be less than that of the curved mirrors 420, a plurality of the phosphor layers 221 may be located along a straight line or other light gap, the phosphor layers 221 may be located at a center pattern of the phosphor layers 221, the phosphor layers 221 may be located at a center of the phosphor layers 215, and a pattern of phosphor layers 221 may be located at a center of the phosphor layers 215, or at a center of the phosphor layers 221, the phosphor layers 221 may be located at a center of the phosphor layers 215, and a pattern may be located at a center of phosphor layers 215, and a symmetrical pattern of phosphor layers 221, and a symmetrical pattern may be located at a plurality of phosphor layers 221, and a symmetrical pattern formed may be located at a center of a symmetrical pattern of phosphor layers 215, and a symmetrical substrate 221, and a symmetrical pattern may be located at a center of a plurality of phosphor layers 215, and a symmetrical pattern formed by a symmetrical pattern of a plurality of phosphor layers 215, and a plurality of phosphor layers 221, a plurality of phosphor layers 221 located at a linear pattern may be located at a plurality of phosphor layers 111, and a plurality of phosphor layers 221 located at a linear pattern may be located at a linear pattern formed by a plurality of phosphor layers 215, and a linear pattern formed by.

Preferably, the far-light reflecting bowl 50 is a curved mirror 420, the second wavelength conversion unit 320 is located at a focal point of the curved mirror, one phosphor layer 221 and one phosphor layer L ED chip 215 in the second L ED light source unit 312 are respectively provided, and the laser beam is projected to a center of an upper surface of the phosphor layer 221, as the structure of the first wavelength conversion unit 220 in fig. 2 is the same, the phosphor layer 221 is located above the L ED chip 215, and the L ED chip 215 is connected to the substrate 214 through the reflective interface 216, specifically, the substrate 214 has two functions, that is, on one hand, heat generated by L ED chips 215 is conducted downward, on the other hand, an electrode is provided on the substrate 214, which is connected to an external power supply for supplying power to the L ED chips 215, in this embodiment L ED chips 215 are light emitting diodes, and are integrated on the substrate 214, and a light beam is emitted by electrically inputting spontaneous emission of excitation light, that a part of the excitation light is transmitted upward and enters the phosphor layer 221, and on the other part of the phosphor layer 221 is transmitted downward, and the excitation light is reflected by the phosphor layer 216, and the phosphor layer 216 is reflected by the phosphor layer 8678.

Preferably, the far-light reflector 50 is a curved mirror 420, the number of L ED chips 215 and phosphor layers 221 in the second L ED light source unit 312 is multiple, multiple phosphor layers 221 are closely arranged and located at the focal point of the curved mirror 420, one phosphor layer 221 corresponds to each of the L ED chips 215, a reflective interface 216 is disposed between the L ED chips 215 and the substrate 214, the laser beams are projected onto each of the phosphor layers 221 or onto one of the phosphor layers 221, specifically, the number of L ED chips 215 and the number of the phosphor layers 221 are multiple and the number of the two are the same, that is, L chips 215 and phosphor layers 221 correspond to each other, the laser beams are projected onto one of the phosphor layers 221, in this embodiment, as with the first L ED light source unit 212 shown in fig. 3, three or more than 2 or more than 4 led chips 215 and three phosphor layers 221 are respectively, the laser beams are closely arranged at the focal point 50 along a straight line, the laser beams are projected onto the second L ED light source unit 212, L led chips 215 and the phosphor layers 221 are provided with a number of more than that of the phosphor layers 221, the phosphor layers 221 are also provided, the phosphor layers 221 are arranged at a speed that the fluorescent layers 215 is increased, and the fluorescent layers 221 is increased by a speed that the fluorescent powder layers 214, and the fluorescent layers 221 is increased by a number of the fluorescent powder layers 221, and the fluorescent layers 221, which are generally increased by a fluorescent layers 221, and the fluorescent layers 221 arranged under the fluorescent layers 221, and the fluorescent layers 215 arranged under the fluorescent layers 221, and the fluorescent layers 221, which are generally increased by a fluorescent layers 221.

As shown in the structure of the near light reflector 40 in fig. 5, the far light reflector 50 is formed by splicing a plurality of curved mirrors 420, a plurality of L ED chips 215 and phosphor layers 221 in the second L ED light source unit 312 are respectively provided, and a plurality of phosphor layers 221 are distributed in a gap, each phosphor layer 221 is located at a focal point corresponding to one curved mirror 420, one phosphor layer 221 is located above each L ED chip 215, a reflective interface 216 is provided between the L ED chip 215 and the substrate 214, the laser beam is projected onto each phosphor layer 221 or onto one phosphor layer 221, specifically, the far light reflector 50 is formed by splicing a plurality of curved mirrors 420, each curved mirror 420 corresponds to one focal point, the surface of the curved mirror 420 may be a paraboloid, an ellipsoid or other curved surface, each phosphor layer 221 is located at a focal point corresponding to one curved mirror 420, the number of phosphor layers may be the same as that of the curved mirrors 420, both of the curved mirrors may be less than the number of the curved mirrors 420, the number of the curved mirrors 221 may be smaller than that of the light field 221, the plurality of light field light sources 221 may be located at a linear pattern of the curved mirrors 221, and the linear pattern of phosphor layers 221 may be arranged between the curved mirrors 221, and the curved mirrors 221, the linear pattern of phosphor layers 221 may be arranged along the curved mirrors 221, the curved surface of the curved mirrors 221 may be arranged along the curved surface of the curved mirrors 221, and the curved mirrors 221, the curved mirrors 221 may be arranged along the curved surface of the curved mirrors 221, the curved mirrors 221 may be arranged at the curved mirrors 221, and the curved surface of the curved mirrors 221 may be arranged at the curved mirrors 221, and the curved mirror 420, and the curved surface of the curved mirrors 221, the curved mirrors 221 may be arranged at the curved mirror array of the curved mirror array may be arranged at the curved mirror array of the curved mirror array may be arranged at the.

To sum up, the present invention provides a vehicle headlamp integrating far and near lights, which comprises a heat dissipation bracket 10, a low beam light source group and a high beam light source group separately disposed at the upper and lower sides of the heat dissipation bracket 10, a low beam light reflection bowl 40 corresponding to the low beam light source group, a high beam light reflection bowl 50 corresponding to the high beam light source group, a movable light shielding plate 60 and a lens 70 disposed at the front end of the heat dissipation bracket 10, and a heat dissipation plate group 80 disposed at the rear end of the heat dissipation bracket 10, wherein the low beam light source group comprises a first excitation light unit and a first wavelength conversion unit 220, the first excitation light unit comprises a first laser source unit 211, a first L light source unit 212 and a control switch connected to the first laser source unit 211, the first wavelength conversion unit 220 corresponds to the focus of the low beam light reflection bowl 40, the laser beam emitted by the first laser source unit 211 and the light beam emitted by the first L ED light source unit 212 are respectively projected onto the first wavelength conversion unit 220, the high beam energy conversion unit 39312 and the high beam energy conversion unit 39311 and the high beam energy conversion unit is configured to increase the light source unit of the high beam energy emitted by the second high beam energy conversion unit of the high beam light source 312, the high beam energy conversion unit of the high beam light source unit 5926 and the high beam light source unit 99.

Although the embodiments of the present invention have been described in the specification, these embodiments are only for the purpose of presentation and should not be construed as limiting the scope of the present invention. Various omissions, substitutions, and changes may be made without departing from the spirit and scope of the invention.

Claims (10)

1. A vehicle headlamp integrating high beam and low beam comprises a radiating support, a low beam light source group and a high beam light source group which are respectively arranged on the upper side and the lower side of the radiating support, a low beam light reflecting bowl corresponding to the low beam light source group, a high beam light reflecting bowl corresponding to the high beam light source group, a movable light shielding plate and a lens which are arranged at the front end of the radiating support, and a radiating fin group arranged at the rear end of the radiating support, and is characterized in that the low beam light source group comprises a first exciting light unit and a first wavelength conversion unit, the first exciting light unit comprises a first laser source unit, a first L ED light source unit and a control switch connected with the first laser source unit, the first wavelength conversion unit is positioned corresponding to the focus of the low beam light reflecting bowl, a laser beam emitted by the first laser source unit and a light beam emitted by a first L ED light source unit are respectively projected onto the first wavelength conversion unit, the high beam group comprises a second exciting light unit and a second wavelength conversion unit, the second laser source unit comprises a second laser source unit and a second L, the second laser source unit is positioned corresponding to the focus of the high beam, and the second wavelength conversion unit is projected onto the second wavelength conversion unit L.

2. The high and low beam integrated vehicle headlamp according to claim 1, wherein the first laser source unit and the first wavelength conversion unit are respectively disposed at both sides of the low beam reflector, and a first light passing portion for passing the laser beam is disposed on the low beam reflector; the second laser source unit and the second wavelength conversion unit are respectively arranged on two sides of the high beam light reflecting bowl, and a second light through part for transmitting the laser beam is arranged on the high beam light reflecting bowl.

3. The high and low beam integrated vehicle headlamp according to claim 2, wherein the first laser light source unit comprises one or more laser light sources, and the first beam passing portion is provided with one or more laser light sources; the second laser light source unit includes one or more laser light sources, and the second laser light source unit is provided with one or more laser light sources.

4. The high-beam and low-beam integrated vehicle headlamp of claim 3, wherein each of the first L ED light source unit and the second L ED light source unit comprises a substrate and at least one L ED chip, each of the first wavelength conversion unit and the second wavelength conversion unit comprises at least one phosphor layer, the phosphor layers are disposed on the L ED chips or on the substrate, one phosphor layer is disposed above each L ED chip, and the other phosphor layer is disposed below the substrate.

5. The high-beam and low-beam integrated vehicle headlamp of claim 4, wherein the low-beam reflector is a curved mirror, the first wavelength conversion unit is located at a focal point of the curved mirror, one of the L ED chip and the phosphor layer of the first L ED light source unit is provided, and the laser beam is projected to a center of an upper surface of the phosphor layer.

6. The high-beam and low-beam integrated vehicle headlamp of claim 4, wherein the low-beam reflector is a curved mirror, the number of L ED chips and the number of phosphor layers in the first L ED light source unit are both multiple, the multiple phosphor layers are closely arranged and located at the focal point of the curved mirror, one phosphor layer is located above each L ED chip, a reflective interface is provided between the L ED chip and the substrate, and the laser beam is projected onto each phosphor layer or one of the phosphor layers.

7. The far and near light integrated vehicle headlamp according to claim 4, wherein the near light reflector is formed by splicing a plurality of curved mirrors, the L ED chip and the phosphor layer in the first L ED light source unit are respectively provided with a plurality of phosphor layers, the plurality of phosphor layers are distributed in a gap manner, each phosphor layer is located at the focus of one corresponding curved mirror, one phosphor layer is located above each L ED chip, a reflective interface is arranged between the L ED chip and the substrate, and the laser beam is projected onto each phosphor layer or one of the phosphor layers.

8. The high-beam and low-beam integrated vehicle headlamp of claim 4, wherein the high-beam reflector is a curved mirror, the second wavelength conversion unit is located at a focal point of the curved mirror, one of the L ED chip and the phosphor layer of the second L ED light source unit is provided, and the laser beam is projected to a center of an upper surface of the phosphor layer.

9. The high-beam and low-beam integrated vehicle headlamp of claim 4, wherein the high-beam reflector is a curved mirror, the number of L ED chips and the number of phosphor layers in the second L ED light source unit are both plural, the plural phosphor layers are closely arranged and located at the focal point of the curved mirror, one phosphor layer is located above each L ED chip, a reflective interface is provided between the L ED chip and the substrate, and the laser beam is projected onto each phosphor layer or one of the phosphor layers.

10. The high-beam and low-beam integrated vehicle headlamp of claim 4, wherein the high-beam reflector is formed by splicing a plurality of curved mirrors, the L ED chips and the phosphor layers in the second L ED light source unit are respectively provided in plurality, the plurality of phosphor layers are distributed in a gap manner, each phosphor layer is located at the focus of a corresponding curved mirror, a phosphor layer is located above each L ED chip, a reflective interface is provided between the L ED chip and the substrate, and the laser beam is projected onto each phosphor layer or one of the phosphor layers.

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