CN210926060U - Bismuth telluride-based semiconductor thermoelectric device without substrate - Google Patents
Bismuth telluride-based semiconductor thermoelectric device without substrate Download PDFInfo
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- CN210926060U CN210926060U CN201922396812.3U CN201922396812U CN210926060U CN 210926060 U CN210926060 U CN 210926060U CN 201922396812 U CN201922396812 U CN 201922396812U CN 210926060 U CN210926060 U CN 210926060U
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Abstract
The utility model relates to a bismuth telluride based semiconductor thermoelectric device of no base plate is equipped with as high temperature end water conservancy diversion copper bar, bismuth telluride base P/N type thermoelectric element of high temperature end electrode, as low temperature end water conservancy diversion copper bar, wire of low temperature end electrode and be used for high temperature end water conservancy diversion copper bar, bismuth telluride P/N type thermoelectric element, the lead-free solder of welding between the low temperature end water conservancy diversion copper bar. The thermoelectric device has the characteristics of simple structure, high production yield and low use cost. The thermoelectric device overcomes the limitation that the existing semiconductor thermoelectric device finished product must have a ceramic substrate as a support, eliminates the thermal stress between a ceramic plate and electrodes of the existing semiconductor thermoelectric device, improves the thermoelectric conversion efficiency and thermoelectric performance of the thermoelectric device in actual use, and has reliable use, good stability and long service life.
Description
Technical Field
The utility model relates to a bismuth telluride based semiconductor thermoelectric device of no base plate belongs to semiconductor refrigeration and thermoelectric generation field.
Background
In recent years, with global environmental deterioration and the emergence of energy crisis, much attention has been paid to thermoelectric conversion materials. The bismuth telluride-based alloy is a thermoelectric material with the best thermoelectric property in a low-temperature region at present, and can be used for semiconductor thermoelectric refrigeration and thermoelectric power generation.
At present, both a semiconductor thermoelectric refrigerating device and a thermoelectric generating device in the market are of sandwich structures and are provided with a hot-end ceramic plate with a diversion copper sheet, a P/N type element and a cold-side ceramic plate with a diversion copper sheet. For example, in the patent 'a bismuth telluride-based thermoelectric power generation device' granted in 2010 by China, the patent number is 200820154729.4, the low-temperature terminal electrode is sintered on the ceramic substrate, and the pattern of the low-temperature terminal electrode is matched with the hole of the porous support frame; the porous support frame is positioned between the upper ceramic substrate and the lower ceramic substrate, and the low-temperature terminal electrode and the P/N type element are positioned in the holes of the porous support frame; a soldering tin layer and a barrier layer are arranged between the high-temperature end electrode and the low-temperature end electrode and the P/N type element, and the soldering tin layer combines the P/N type element and the high-temperature end electrode and the low-temperature end electrode together; the bismuth telluride-based thermoelectric power generation device with electric conduction series connection and heat conduction parallel connection is formed. For a semiconductor thermoelectric device, a ceramic plate mainly has insulation and heat conduction functions, but the ceramic plate has thermal resistance, so that the actual conversion efficiency of the semiconductor thermoelectric device is influenced.
At present, a ceramic plate and a guide copper bar are directly bonded by adopting a ceramic copper-clad plate process in China, the ceramic plate and the guide copper bar are tightly combined, the hot surface temperature is high in long-term use, high thermal stress is difficult to release due to different thermal expansion coefficients between the ceramic plate and the guide copper bar, the use stability of a device is poor, in a cyclic temperature impact aging test with thermal load at 80-20 ℃, a period of 10 minutes is formed, and a semiconductor thermoelectric device which is generally directly bonded by the ceramic plate and the guide copper bar fails within 1000 periods. On the other hand, the ceramic plate directly bonded with the guide copper bar (DBC ceramic plate) in the market at present accounts for 30% of the direct cost of the whole device, and the DBC ceramic plate can cause a large amount of energy consumption in the production process. Therefore, it is necessary to develop a substrate-free bismuth telluride-based semiconductor thermoelectric device for further reducing the production cost and energy waste and improving the thermoelectric performance, thermoelectric conversion efficiency and service life of the device.
Disclosure of Invention
An object of the utility model is to solve the problem that prior art exists, and provide a components and parts inside do not have base plate, do not have supporting frame structure, and the device specification is many, with low costs, the yield is high, thermoelectric conversion efficiency is high, high temperature resistant, long-term performance stability is good, be applicable to the bismuth telluride base thermoelectric semiconductor power generation device of the no base plate of big industrialization batch preparation.
In order to achieve the purpose, the utility model adopts the technical proposal that: providing a substrate-free bismuth telluride-based semiconductor thermoelectric device, which is provided with a high-temperature end diversion copper strip, a low-temperature end diversion copper strip, a bismuth telluride-based P/N type thermoelectric element, lead-free solder and a lead; the high-temperature end diversion copper strip is used as a high-temperature end electrode, the low-temperature end diversion copper strip is used as a low-temperature end electrode, a bismuth telluride-based P/N type thermoelectric element and lead-free solder used for welding the high-temperature end diversion copper strip, the P/N type thermoelectric element and the low-temperature end diversion copper strip are arranged between the high-temperature end diversion copper strip and the low-temperature end diversion copper strip; the number of the leads is 2, and the leads are respectively connected with the P-type element and the N-type element on the high-temperature end diversion copper bar.
The surfaces of a P-type element and an N-type element in the bismuth telluride based P/N-type thermoelectric element are plated with a nickel layer with the thickness of 6-8 mu m and a tin layer with the thickness of 6-8 mu m.
The P-type element and the N-type element in the bismuth telluride-based P/N-type thermoelectric element are both 0.5-1.4 mm long, 0.5-1.4 mm wide and 0.5-1.8 mm high.
The lead-free solder is SnAgCu or Sn95Sb 5.
The utility model discloses the advantage that bismuth telluride based semiconductor thermoelectric device of no base plate compared with current technique has is:
①, the utility model discloses no base plate's bismuth telluride base semiconductor thermoelectric device simple structure, long service life current semiconductor thermoelectric device adopts the structure of ceramic plate and the direct bonding of water conservancy diversion copper bar, and the thermoelectric device is hot end temperature is higher when long-term the use, and the ceramic plate leads to producing the difficult factor such as release of higher thermal stress to arouse the stability in use of device relatively poor because of different thermal expansion coefficient between ceramic plate and water conservancy diversion copper sheet, if the utility model discloses a no base plate semiconductor thermoelectric device takes the cyclic temperature impact ageing test of thermal load at 80 ~ 20 ℃ in, under same ageing test condition, takes 10 minutes as a cycle, carries out 2000 cyclic periods, and the thermoelectric performance and the thermoelectric conversion efficiency of device have only reduced 2%.
② the utility model discloses the production of bismuth telluride base semiconductor thermoelectric device and use cost of no base plate all are lower than traditional semiconductor thermoelectric device, and thermoelectric device specification and size is many, and thermoelectric conversion efficiency is high with thermoelectric performance in the in-service use, uses reliably, stability is good.
③ the utility model discloses no base plate bismuth telluride based semiconductor thermoelectric device adopts solid brilliant machine equipment, fixed owing to the preparation process, can reduce effectively because of the quality problems that manual operation brought, adopts reflow oven welding mode simultaneously, can improve the uniformity of welding quality and finished product device effectively, has the precision height, and the lumber recovery is high, characteristics that production efficiency is high.
Drawings
Fig. 1 is a schematic view of the external structure of the bismuth telluride-based semiconductor thermoelectric device without the substrate according to the present invention.
FIG. 2 is a schematic structural diagram of the present invention, in which the surface of the P-type and N-type thermoelectric chips is plated with the nickel layer and then with the tin layer.
Fig. 3 is a schematic structural view of a hot-side ceramic plate printed with glue and fixed with a high-temperature end guide copper strip by screen printing.
Fig. 4 is the structural schematic diagram of the cold-face ceramic plate after the low-temperature end diversion copper strip is fixed by the adhesive.
FIG. 5 is a schematic view of a cold-side ceramic plate with low-temperature end guiding copper bars covering a P/N type thermoelectric element.
FIG. 6 is an exploded view of the P/N type thermoelectric device after being welded.
In the above figures: 1-guiding copper bars at a high temperature end; 2-low temperature end diversion copper bar; 3-bismuth telluride P/N type thermoelectric element; 4-a wire; 5-hot-face ceramic plate; 6, gluing; 7-cold-surface ceramic plate; 8-a nickel layer; 9-tin layer; 10-P type thermoelectric chip; 11-N type thermoelectric chip.
Detailed Description
The substrate-less bismuth telluride-based semiconductor thermoelectric device of the present invention will be described in further detail with reference to the accompanying drawings, but the present invention is not limited thereto.
Example 1: the utility model provides a bismuth telluride-based semiconductor thermoelectric device without a substrate, which has a structure shown in figure 1 and is provided with a high-temperature end diversion copper bar 1, a low-temperature end diversion copper bar 2, a bismuth telluride-based P/N type thermoelectric element 3, a lead-free solder and a lead 4; the high-temperature end diversion copper strip is used as a high-temperature end electrode, the low-temperature end diversion copper strip is used as a low-temperature end electrode, a bismuth telluride-based P/N type thermoelectric element 3 and lead-free solder used for welding the high-temperature end diversion copper strip, the P/N type thermoelectric element and the low-temperature end diversion copper strip are arranged between the high-temperature end diversion copper strip 1 and the low-temperature end diversion copper strip 2; the lead-free solder is SnAgCu or Sn95Sb 5; the number of the wires 4 is 2, red and black wires with the length of 150mm are selected and respectively welded on the P-type element and the N-type element on the left side and the right side of the high-temperature end diversion copper bar 1.
The utility model provides a bismuth telluride base P/N type thermoelectric element 3 adopts two kinds of thermoelectric materials of bismuth telluride base P type and N type with length 300mm, width 100mm and height 100mm as raw materials, firstly, the two kinds of thermoelectric materials of bismuth telluride base P type and N type are respectively cut into P type thermoelectric chip 10 and N type thermoelectric chip 11 with thickness of 0.5-1.8 mm, the surfaces of the cut P type thermoelectric chip 10 and N type thermoelectric chip 11 are coarsened by chemical corrosion method, firstly, nickel layer 8 with thickness of 6-8 μm is evenly plated, then, tin layer 9 with thickness of 6-8 μm is plated, as shown in FIG. 2, the P-type thermoelectric chip and the N-type thermoelectric chip are surface-metallized, and both of the metallized thermoelectric chips are cut into P-type elements and N-type elements each having a length of 0.5 to 1.4mm and a width of 0.5 to 1.4mm, and the P-type elements and N-type elements are assembled into a bismuth telluride-based P/N-type thermoelectric element 3.
The utility model discloses well no base plate's bismuth telluride base semiconductor thermoelectric device preparation process is: the prepared raw materials comprise bismuth telluride base P-type and N-type thermoelectric materials, a ceramic plate, organic viscose, a guide copper bar, Sn95Sb5 lead-free solder with a melting point of 240 ℃ and the like.
⑴, using bismuth telluride base P-type thermoelectric material and N-type thermoelectric material with the length of 300mm, the width of 100mm and the height of 100mm as raw materials, respectively cutting the two thermoelectric materials into a P-type thermoelectric wafer 10 and an N-type thermoelectric wafer 11 with the thickness of 0.5mm, roughening the surfaces of the cut P-type thermoelectric wafer 10 and the cut N-type thermoelectric wafer 11 by a chemical corrosion method, uniformly plating a nickel layer 8 with the thickness of 6-8 μm, then plating a tin layer 9 with the thickness of 6-8 μm, metallizing the surfaces of the thermoelectric wafers, and respectively cutting the metallized thermoelectric wafers into a P-type element and an N-type element with the length and the width of 0.5mm × 0.5.5 mm, as shown in figure 2.
⑵, printing organic viscose 6 on the hot face ceramic plate 5 by silk screen printing process, as shown in fig. 3 and 4, arranging the high temperature end diversion copper strips 1 in the mould according to the array by the vibrating screen, superposing the high temperature end diversion copper strips and the viscose printed patterns on the hot face ceramic plate, making the high temperature end diversion copper strips spread and stick on the viscose of the hot face ceramic plate, spreading the low temperature end diversion copper strips 2 and stick on the viscose of the cold face ceramic plate 7 by the same process.
⑶, screen printing with 240 ℃ lead-free solder of Sn95Sb5 on the high temperature end-lead copper strip 1 with the hot-face ceramic plate 5 and on the low temperature end-lead copper strip 2 with the cold-face ceramic plate 7.
⑷, placing the high-temperature end diversion copper bar 1 with the hot face ceramic plate 5 printed with Sn95Sb5 lead-free solder on a workbench of a die bonder, simultaneously sending the cut P-type elements and N-type elements to a mechanical arm of the die bonder through a vibrating disk, and regularly swinging the P-type elements and the N-type elements on the high-temperature end diversion copper bar 1 by the mechanical arm to assemble the P/N-type thermoelectric elements 3.
⑸, as shown in fig. 5, the low temperature end lead copper bars 2 printed with Sn95Sb5 lead-free solder on the surface and the cold-face ceramic plates 7 with them are accurately covered on the P/N type thermoelectric elements 3 regularly assembled in step ⑷ by an alignment jig, and the hot-face ceramic plates 5 and the cold-face ceramic plates 7 are aligned up and down.
⑹, fixing the hot-face ceramic plate 5 bonded with the high-temperature end diversion copper strip 1, the bismuth telluride-based P/N type thermoelectric element 3 and the cold-face ceramic plate 7 bonded with the low-temperature end diversion copper strip 2 by using spring clips, sending the fixed plates into a reflow furnace, and performing double-face hot welding through the reflow furnace at the speed of 1.2m/min to complete assembly and welding;
⑺, loosening the spring clamp after heating and welding, as shown in figure 6, putting the whole device in a cleaning agent for cleaning, taking down the hot face ceramic plate 5 and the cold face ceramic plate 7, because the viscose has viscosity at room temperature, the viscose is heated to lose viscosity at high temperature, so the hot face ceramic plate 5 and the cold face ceramic plate 7 are easy to take down, cleaning and drying, welding the wires 4 with the specification of UL3239, 20AWG and 150mm according to the left red and the right black, and completing the preparation of the substrate-free bismuth telluride-based semiconductor thermoelectric device after welding the wires.
The utility model discloses the bismuth telluride base semiconductor thermoelectric device of no base plate is because not adopting ceramic substrate as the support, has consequently not had the thermal resistance of ceramic plate to guarantee that every pair bismuth telluride base P/N type semiconductor thermoelectric device is independent each other, can resist the shake, can guarantee that thermoelectric element is stable work under high temperature for a long time, improved the life of thermoelectric conversion efficiency and device greatly.
Claims (4)
1. A bismuth telluride-based semiconductor thermoelectric device without a substrate is provided with a high-temperature end diversion copper strip, a low-temperature end diversion copper strip, a bismuth telluride-based P/N type thermoelectric element, a lead-free solder and a lead; the method is characterized in that: the high-temperature end diversion copper strip is used as a high-temperature end electrode, the low-temperature end diversion copper strip is used as a low-temperature end electrode, a bismuth telluride-based P/N type thermoelectric element and lead-free solder used for welding the high-temperature end diversion copper strip, the P/N type thermoelectric element and the low-temperature end diversion copper strip are arranged between the high-temperature end diversion copper strip and the low-temperature end diversion copper strip; the number of the leads is 2, and the leads are respectively connected with the P-type element and the N-type element on the high-temperature end diversion copper bar.
2. The substrate-less bismuth telluride-based semiconductor thermoelectric device as claimed in claim 1 wherein: the surfaces of a P-type element and an N-type element in the bismuth telluride based P/N-type thermoelectric element are plated with a nickel layer with the thickness of 6-8 mu m and a tin layer with the thickness of 6-8 mu m.
3. The substrate-less bismuth telluride-based semiconductor thermoelectric device as claimed in claim 1 wherein: the P-type element and the N-type element in the bismuth telluride-based P/N-type thermoelectric element are both 0.5-1.4 mm long, 0.5-1.4 mm wide and 0.5-1.8 mm high.
4. The substrate-less bismuth telluride-based semiconductor thermoelectric device as claimed in claim 1 wherein: the lead-free solder is SnAgCu or Sn95Sb 5.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113257758A (en) * | 2021-05-11 | 2021-08-13 | 上海空间电源研究所 | Novel high-temperature area thermoelectric device integrated module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113257758A (en) * | 2021-05-11 | 2021-08-13 | 上海空间电源研究所 | Novel high-temperature area thermoelectric device integrated module |
| CN113257758B (en) * | 2021-05-11 | 2022-06-28 | 上海空间电源研究所 | Novel thermoelectric device integrated module for high temperature area |
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