CN210667909U - Flexible transparent conductive film manufacturing device - Google Patents
Flexible transparent conductive film manufacturing device Download PDFInfo
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- CN210667909U CN210667909U CN201921382636.1U CN201921382636U CN210667909U CN 210667909 U CN210667909 U CN 210667909U CN 201921382636 U CN201921382636 U CN 201921382636U CN 210667909 U CN210667909 U CN 210667909U
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Abstract
The utility model provides a flexible transparent conductive film manufacturing device, which comprises a blade coating mechanism, a colloid cutting mechanism, a drying mechanism, a metal deposition mechanism and a washing mechanism; the blade coating mechanism, the colloid cutting mechanism, the drying mechanism, the metal deposition mechanism and the washing mechanism are sequentially arranged in the assembly line direction; the metal deposition mechanism comprises a magnetron sputtering instrument. Cutting the transparent colloid layer according to the grid shapes of triangle, rectangle, hexagon and the like by a laser cutting colloid film technology to obtain a mesoscale crack, drying the colloid solution on the substrate to generate a microscale crack, depositing metal in the microscale and mesoscale crack on a colloid template which generates the microscale and mesoscale crack by a magnetron sputtering technology, removing the colloid on the substrate, and finally obtaining a conductive film of the substrate and the composite metal mesh coated on the substrate; the prepared conductive film has excellent conductivity, and the resistance value of the conductive film can be almost kept unchanged after the conductive film is bent for multiple times.
Description
Technical Field
The utility model relates to an electron device makes the field, particularly, relates to a flexible transparent conductive film manufacturing installation.
Background
The transparent conductive electrode with excellent mechanical flexibility becomes an important part of a next generation wearable optoelectronic device, and occupies an increasingly important position in the fields of light-emitting devices, photovoltaic cells, touch screen panels and the like. Tin-doped indium oxide (ITO) has become the most widely used transparent conductive film material in academia and industry due to its optical transparency, thermal and chemical stability, device compatibility and advanced manufacturing process.
Although the preparation of ITO plastic films has been achieved, its application in various wearable optoelectronic devices is still limited because of the brittle nature of ITO. In addition, the high cost of indium also makes this material problematic for future optoelectronic product applications. Potential alternatives to ITO include Carbon Nanotubes (CNTs), graphene, conductive polymers, metal Nanowires (NWs), metal grids and metal nano-networks, among others. Although carbon-based TCE materials such as CNTs, graphene and conductive polymers behave far more flexibly than ITO, their inherently low conductivity limits their usefulness. On the other hand, metal-based conductive films such as metal nanowires, metal meshes, and metal nanomeshes exhibit good photoelectric properties. The existence of a large number of binding points among the metal nanowires enables the resistance of the conductive film to be large, and further application of the conductive film in the field of flexible electronics is limited. At present, most metal nano grids are prepared by a photoetching technology and a coating technology, the photoetching technology is complex, the cost is high, and the large-area roll-to-roll production is not facilitated.
Therefore, the utility model provides a manufacturing installation of flexible transparent conducting film based on laser cutting colloid film technique and colloid fracture technique can realize that the preparation of low cost, large tracts of land, controllable appearance has hierarchical structure's flexible transparent conducting film. The utility model discloses use the crackle that the colloidal solution was dried up to produce and the laser cutting colloid is compound as the template, through the power of control laser cutting, speed, colloidal solution's concentration and the dry conditions such as temperature humidity, produce controllable appearance and have hierarchical structure's flexible transparent conducting film.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a flexible transparent conducting film manufacturing installation improves prior art's technical problem.
A manufacturing device of a flexible transparent conductive film comprises a blade coating mechanism, a colloid cutting mechanism, a drying mechanism, a metal deposition mechanism and a washing mechanism.
Furthermore, the blade coating mechanism, the colloid cutting mechanism, the drying mechanism, the metal deposition mechanism and the washing mechanism are sequentially arranged in the assembly line direction.
Further, the scraping and coating mechanism is used for scraping the redundant colloid layer on the substrate, so that the colloid layer is uniformly coated on the substrate.
Further, the knife coating mechanism comprises a knife coating platform, a knife coating template, a groove, a knife coating knife and a knife coating knife rest, the knife coating template is placed on the knife coating platform, and the groove for placing the conductive film substrate is formed in the knife coating template.
Further, the depth of the groove in the blade coating template is larger than the thickness of the conductive film.
Further, the depth of the groove is equal to the sum of the thickness of the conductive film and the thickness of the colloid layer.
Further, the knife is arranged above the knife coating template through a knife coating frame.
Further, knife coating knife rest bottom is equipped with knife coating knife rest slide rail, knife coating knife rest slide rail both sides are equipped with the track stopper.
Further, the colloid cutting mechanism is used for cutting the colloid layer on the substrate.
Further, the colloid cutting mechanism comprises a laser cutting device controlled by a computer.
Further, laser cutting device includes cutting platform, stopper, laser cutting knife slide rail and laser cutting knife, the last fixed stopper that is equipped with of cutting platform, the laser cutting knife passes through the laser cutting knife slide rail and locates the cutting platform top.
Further, the drying mechanism has the function of drying and cracking the colloid layer on the substrate to generate micron-sized cracks by controlling the ambient air pressure, temperature and humidity.
Further, the drying mechanism comprises a box body capable of adjusting the ambient air pressure, temperature and humidity.
Further, the metal deposition mechanism is used for depositing metal on the surface of the colloid layer.
Further, the metal deposition mechanism comprises a magnetron sputtering instrument.
Further, magnetron sputtering appearance includes revolving stage, positive pole, negative pole and metal target, the revolving stage is equipped with the positive pole, install negative pole and metal target directly over the revolving stage, the fixed laminating of negative pole and metal target.
Further, the magnetron sputtering instrument also comprises a vacuum system and argon.
Further, the washing mechanism includes a function for washing away the colloidal layer on the substrate.
Further, the washing mechanism comprises a washing tank and washing liquid arranged in the washing tank.
Further, the washing tank is an ultrasonic washing tank.
Further, the washing solution is absolute ethyl alcohol or deionized water.
Furthermore, the manufacturing device also comprises a grabbing mechanism which is arranged above the scraping mechanism, the colloid cutting mechanism, the drying mechanism, the metal deposition mechanism and the washing mechanism.
Further, snatch the mechanism and press from both sides, flexible lifter and slip track including snatching, flexible lifter bottom is connected with the clamp of snatching, flexible lifter upper end and slip track sliding connection.
Further, the substrate is a flexible film.
Further, the flexible film is any one or any combination of more than two of a high molecular polymer film, a plant fiber film and a metal foil.
Further, the colloid is an oxide coating.
Further, the oxide coating is TiO2With SiO2Adding one or two of the above materials into anhydrous ethanol solution, and stirring.
Has the advantages that:
the utility model provides a flexible transparent conducting film manufacturing installation, through the coating colloidal solution on different flexible bases, the dry crackle that produces of colloidal solution, assist laser cutting colloid template technique, prepare the colloid mask plate that has hierarchical structure, then use magnetron sputtering technique and ultrasonic treatment's method, prepare hierarchical structure's flexible transparent conducting film, and the electric conductivity of the flexible transparent conducting film who prepares is good, can realize that the conducting film is after buckling many times, its resistance value remains unchanged almost, manufacturing installation has nontoxic harmless, therefore, the carrier wave prepaid electric energy meter is low in cost, the operation is thus simple, large-scale production has the advantage, traditional ITO conducting film can be replaced to the flexible transparent conducting film of production, be applied to luminous electron device, photovoltaic cell, wearable optoelectronic device fields such as touch screen panel.
Drawings
Fig. 1 is a schematic structural diagram of a first embodiment of an apparatus for manufacturing a flexible transparent conductive film according to the present invention;
FIG. 2 is a schematic structural view of a knife coating mechanism of a flexible transparent conductive film manufacturing apparatus of the present invention;
fig. 3 is a schematic structural diagram of a colloid cutting mechanism of a flexible transparent conductive film manufacturing apparatus of the present invention;
FIG. 4 is a schematic structural diagram of a metal deposition mechanism of a flexible transparent conductive film manufacturing apparatus according to the present invention;
fig. 5 is a schematic structural diagram of a second embodiment of the apparatus for manufacturing a flexible transparent conductive film according to the present invention;
fig. 6 is an optical microscope image of a flexible transparent conductive film made by the present invention;
FIG. 7 is a graph showing the relationship between the sheet resistance and the transmittance of conductive films having different shapes and having a hierarchical structure, when the transmittance is 90% according to the present invention;
FIG. 8 is a graph showing the bending test result of the flexible transparent conductive film made by the present invention when the curvature is 0.2 cm;
fig. 9 is a graph of the bending test result of the flexible transparent conductive film made by the present invention bent 500 times under different curvatures.
In the figure: the device comprises a grabbing mechanism-1, a grabbing clamp-101, a telescopic lifting rod-102, a sliding rail-103, a knife coating mechanism-2, a knife coating platform-201, a knife coating template-202, a groove-203, a knife coating-204, a knife coating-205, a knife coating slide rail-206, a rail limiting block-207, a colloid cutting mechanism-3, a cutting platform-301, a limiting block-302, a laser cutting knife slide rail-303 and a laser cutting knife-304, a drying mechanism-4, a metal deposition mechanism-5, a rotating table-501, an anode-502, a cathode-503, a metal target-504 and a washing mechanism-6.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention. Thus, the following detailed description of embodiments of the invention is not intended to limit the scope of the invention as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Example 1.
The utility model provides a flexible transparent conductive film manufacturing installation, construct 2, colloid cutting mechanism 3, dry mechanism 4, deposited metal mechanism 5 and washing mechanism 6 including the knife coating.
Further, the manufacturing apparatus further includes: install in scraping coating mechanism 2, colloid cutting mechanism 3, dry mechanism 4, deposited metal mechanism 5 and the mechanism 1 that snatchs of washing mechanism 6 top, in the conductive film manufacturing process, can transport the semi-manufactured goods to next mechanism and carry out the processing through snatching mechanism 1.
Specifically, snatch mechanism 1 and include that snatch clamp 101, flexible lifter 102 and slip track 103, flexible lifter 102 bottom is connected with snatching clamp 101, flexible lifter 102 upper end and slip track 103 sliding connection snatch the semi-manufactured goods of conducting film through snatching clamp 101, snatch the height of clamp 101 through flexible lifter 102 control, transport the semi-manufactured goods in each processing agency through slip track 103 at last.
In the present invention, the conductive film substrate is a flexible film, preferably, the flexible film is any one or any combination of two or more of a high molecular polymer film, a plant fiber film and a metal foil; the colloid is an oxide coating, preferably the oxide coating is TiO2With SiO2Adding one or two of the above materials into anhydrous ethanol solution, and stirring.
Further, knife rest 205 bottom is equipped with knife rest slide rail 206, knife rest slide rail 206 both sides are equipped with track stopper 207, and knife rest slide rail 206 conveniently strikes off unnecessary colloid through knife rest 205 control knife 204 round trip movement on knife template 202, and track stopper 207 is spacing to knife rest 205's displacement, prevents that knife rest 205 from breaking away from the track.
Can realize at conductive film basement knife coating one deck colloid through knife coating mechanism 2, the basement of colloid after the knife coating snatchs and send to colloid cutting mechanism 3 through snatching 1.
Specifically, the laser cutting device comprises a cutting platform 301, a limiting block 302, a laser cutting knife sliding rail 303 and a laser cutting knife 304, wherein the limiting block 302 is fixedly arranged on the cutting platform 301, the laser cutting knife 304 is arranged above the cutting platform 301 through the laser cutting knife sliding rail 303, the grid shape cut by computer control is a hexagon, any one or any combination of more than two of the quadrangle and the triangle, the processing line interval of the cutting is 200-1000 microns, the line width is 40-200 microns, and the cutting speed of the laser cutting machine is 80 mm/s.
The colloid is cut and processed by the colloid cutting mechanism 3 to form a grid shape, so that the colloid forms a medium-scale crack.
Further, the semi-finished product after laser cutting is grabbed by the grabbing mechanism 1 and sent to the drying mechanism 4.
Specifically, the drying mechanism 4 comprises a box body capable of adjusting ambient air pressure, temperature and humidity, and the air pressure 1x10 in the box body is controlled-3Pa, humidity of 55% or less, temperature of 50-70 deg.C, and preferably air pressure of 1 × 10-3Pa, the humidity is 40-50%, and the temperature is 55-60 ℃, so that the colloid film on the substrate can be dried and cracked to generate a micron-sized crack template; it is understood that by controlling the variation of the environmental parameters, different micro-scale cracks can be produced in the oxide coating.
At the moment, cracks of medium-scale laser cutting and micro-scale drying are generated on the colloid, and further, the semi-finished product of the conductive film at the moment is grabbed by the grabbing mechanism 1 and sent to the metal deposition mechanism 5.
The metal deposition mechanism 5 comprises a magnetron sputtering instrument, specifically, the magnetron sputtering instrument comprises a rotating platform 501, an anode 502, a cathode 503 and a metal target 504, the rotary stage 501 is provided with an anode 502, a cathode 503 and a metal target 504 are arranged right above the rotary stage 501, the cathode 503 is fixedly attached to the metal target 504, metal silver is used as the metal target 504 and is fixed on the cathode 503, the substrate is arranged on the anode 502 opposite to the target surface, the distance between the metal target 504 and the substrate is 6cm, the device is pumped to high vacuum and then is filled with gas, usually argon, several kilovolts of voltage is applied between the anode 502 and the cathode 503, glow discharge is generated between the two electrodes, positive ions generated by the discharge fly to the cathode 503 under the action of an electric field, the target atoms collide with the surface atoms of the metal target 504, and the target atoms escaping from the target surface under collision become sputtering atoms, and the sputtering atoms are deposited into a film in the colloid cracks of the mesoscale and the microscale.
Further, during the sputtering process, the vacuum degree in the magnetron sputtering instrument is controlled to be 1x10-5Pa, the flow rate of the high-purity argon is 50cm3And/min, the air pressure of magnetron sputtering argon is 0.5Pa, the sputtering power is 50W, the deposition beam is incident perpendicular to the surface of the sample, the sample table rotates at the rotating speed of 5r/min, and the sputtering time is 20 min.
Finally, the substrate and the colloid which are subjected to magnetron sputtering metal deposition are grabbed by the grabbing mechanism 1 and sent to the washing mechanism 6, the colloid on the substrate is removed, and finally a finished product of the flexible transparent conductive film with the composite metal mesh structure of the substrate and the deposited metal is obtained,
specifically, the washing mechanism 6 includes a washing tank and a washing liquid disposed in the washing tank, and the washing tank is an ultrasonic washing tank.
The washing solution is absolute ethyl alcohol or deionized water, and the sputtered film can be immersed in the absolute ethyl alcohol to achieve the purpose of removing colloid, so that the flexible transparent conductive film is obtained by drying; or ultrasonically washing the sputtered film in deionized water for 20s, removing colloid, taking out, and drying to obtain the flexible transparent conductive film.
In the utility model, firstly, the colloid film technology is cut by laser, the colloid layer is cut on the colloid template according to the grid shapes of triangle, rectangle, hexagon and the like to obtain the mesoscale cracks, then the temperature, the humidity and the air pressure of the environment are controlled to lead the colloid solution on the substrate to be dried to generate the microscale cracks, and metal is deposited in the micro-scale and mesoscale cracks on the colloid template which generates the micro-scale and mesoscale cracks through a magnetron sputtering technology, removing the colloid on the substrate, depositing metal on the medium-scale cracks, removing the colloid to form a first metal mesh structure, depositing metal on the micro-scale cracks, removing the colloid to form a second metal mesh structure, combining the first metal mesh and the second metal mesh to form a composite metal mesh structure, and finally obtaining a conductive film which is a structure of the substrate and the composite metal mesh covered on the substrate; the utility model discloses the conductivity of the flexible transparent conducting film that prepares is good, can realize that the conducting film is after buckling many times, and its resistance value remains almost unchanged, and its production flow has nontoxic harmless, low cost, and easy operation, but large-scale production's advantage that has, the flexible transparent conducting film of production can replace traditional ITO conducting film, is applied to light-emitting electronic device, photovoltaic cell, wearable optoelectronic device fields such as touch-control screen panel.
Example 2.
The second embodiment has the same steps as the first embodiment, and is different from the first embodiment in that the drying mechanism 4 is used for controlling the temperature, humidity and air pressure of the environment to dry the colloidal solution on the substrate to generate micro-scale cracks, then the colloid cutting mechanism 3 is used for cutting the colloid film by laser, and the colloid template is cut through the colloid layer according to the grid shapes such as triangles, rectangles and hexagons to obtain the mesoscale cracks.
The embodiment 2 of the present invention provides that the implementation principle and the generated technical effect are the same as those of the embodiment 1, and for the sake of brief description, the embodiment does not mention, and the embodiment 1 can be referred to the corresponding content.
And (3) testing:
fig. 7 is a graph showing the relationship between the sheet resistance and the transmittance of the conductive film with different grid shapes under the condition that the transmittance of the conductive film is 90%, it can be seen that different shapes have different transmittances and conductivities under the same theoretical transmittance, and the hexagonal structure is the optimal transmittance conductive structure;
fig. 8 shows the bending test result of the flexible transparent conductive film prepared by the present invention when the curvature is 0.2cm, and the resistance value is almost kept unchanged after 500 times of bending.
Fig. 9 is a graph showing the bending test result of the flexible transparent conductive film prepared by the present invention, which is bent 500 times under different curvatures.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (4)
1. A manufacturing device of a flexible transparent conductive film is characterized by comprising a blade coating mechanism, a colloid cutting mechanism, a drying mechanism, a metal deposition mechanism and a washing mechanism;
the blade coating mechanism, the colloid cutting mechanism, the drying mechanism, the metal deposition mechanism and the washing mechanism are sequentially arranged in an assembly line direction;
the metal deposition mechanism comprises a magnetron sputtering instrument.
2. The apparatus of claim 1, wherein the magnetron sputtering apparatus comprises a rotary stage, an anode, a cathode, and a metal target, the rotary stage has the anode, the cathode and the metal target are disposed directly above the rotary stage, and the cathode and the metal target are fixedly attached to each other.
3. The apparatus of claim 2, wherein the magnetron sputtering apparatus further comprises a vacuum system and an argon inlet.
4. The apparatus of claim 1, further comprising a grasping mechanism disposed above the doctor blade mechanism, the colloid cutting mechanism, the drying mechanism, the metal deposition mechanism, and the washing mechanism.
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| CN201921382636.1U CN210667909U (en) | 2019-08-24 | 2019-08-24 | Flexible transparent conductive film manufacturing device |
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| CN201921382636.1U CN210667909U (en) | 2019-08-24 | 2019-08-24 | Flexible transparent conductive film manufacturing device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110570990A (en) * | 2019-08-24 | 2019-12-13 | 泉州柔丝蓝新材料科技有限公司 | Flexible transparent conductive film manufacturing device |
| CN115995312A (en) * | 2023-03-24 | 2023-04-21 | 常州凯得新材料科技有限公司 | Transparent conductive film production line |
-
2019
- 2019-08-24 CN CN201921382636.1U patent/CN210667909U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110570990A (en) * | 2019-08-24 | 2019-12-13 | 泉州柔丝蓝新材料科技有限公司 | Flexible transparent conductive film manufacturing device |
| CN115995312A (en) * | 2023-03-24 | 2023-04-21 | 常州凯得新材料科技有限公司 | Transparent conductive film production line |
| CN115995312B (en) * | 2023-03-24 | 2023-05-26 | 常州凯得新材料科技有限公司 | Transparent conductive film production line |
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Effective date of registration: 20201228 Address after: 3f-a552, Zone C, innovation building, software park, torch hi tech Zone, Xiamen City, Fujian Province, 361000 Patentee after: Xiamen painjie Technology Co.,Ltd. Address before: C108, sanchuangyuan, no.3001, south section of Shiji Avenue, Luoshan street, Jinjiang City, Quanzhou City, Fujian Province, 361000 Patentee before: Quanzhou rousilan New Material Technology Co.,Ltd. |
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